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Semiconductor Components Industries, LLC, 2013

December, 2013 Rev. 15

1 Publication Order Number:

2N5194/D

2N5194G, 2N5195G

Silicon PNP PowerTransistors

These devices are designed for use in power amplifier and switching

circuits; excellent safe area limits.

Features

Complement to NPN 2N5191, 2N5192

These Devices are PbFree and are RoHS Compliant*

MAXIMUM RATINGS(Note 1)

Rating Symbol Value Unit

CollectorEmitter Voltage2N5194G2N5195G

VCEO6080

Vdc

CollectorBase Voltage

2N5194G2N5195G

VCB6080

Vdc

EmitterBase Voltage VEB 5.0 Vdc

Collector Current IC 4.0 Adc

Base Current IB 1.0 Adc

Total Device Dissipation@ TC= 25CDerate above 25C

PD40

320W

W/C

Operating and Storage JunctionTemperature Range

TJ, Tstg 65 to +150 C/W

Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.

1. Indicates JEDEC registered data.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, JunctiontoCase RJC 3.12 C/W

*For additional information on our PbFree strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.

http://onsemi.com

4 AMPERE

POWER TRANSISTORS

PNP SILICON

60 80 VOLTS

MARKING DIAGRAM

Y = Year

WW = Work Week

2N519x = Device Code

x = 4 or 5G = PbFree Package

2N5195G TO225

(PbFree)

500 Units / Bulk

Device Package Shipping

2N5194G TO225

(PbFree)

500 Units / Bulk

ORDERING INFORMATION

3

BASE

1

EMITTER

COLLECTOR

2, 4

TO225

CASE 7709

STYLE 1

1 2 3

YWW

2

N519xG

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ELECTRICAL CHARACTERISTICS (TC= 25C unless otherwise noted) (Note 2)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (Note 3)(IC= 0.1 Adc, IB= 0)

2N5194G2N5195G

VCEO(sus)

6080

Vdc

Collector Cutoff Current(VCE= 60 Vdc, IB= 0)

2N5194G(VCE= 80 Vdc, IB= 0)

2N5195G

ICEO

1.0

1.0

mAdc

Collector Cutoff Current(VCE= 60 Vdc, VBE(off)= 1.5 Vdc)

2N5194G(VCE= 80 Vdc, VBE(off)= 1.5 Vdc)

2N5195G(VCE= 60 Vdc, VBE(off)= 1.5 Vdc, TC= 125C)

2N5194G(VCE= 80 Vdc, VBE(off)= 1.5 Vdc, TC= 125C)

2N5195G

ICEX

0.1

0.1

2.0

2.0

mAdc

Collector Cutoff Current(VCB= 60 Vdc, IE= 0)

2N5194G(VCB= 80 Vdc, IE= 0)

2N5195G

ICBO

0.1

0.1

mAdc

Emitter Cutoff Current(VBE= 5.0 Vdc, IC= 0)

IEBO 1.0

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)(IC= 1.5 Adc, VCE= 2.0 Vdc)

2N5194G2N5195G

(IC= 4.0 Adc, VCE= 2.0 Vdc)2N5194G2N5195G

hFE

2520

107.0

10080

CollectorEmitter Saturation Voltage (Note 3)

(IC= 1.5 Adc, IB= 0.15 Adc)(IC= 4.0 Adc, IB= 1.0 Adc)

VCE(sat)

0.61.4

Vdc

BaseEmitter On Voltage (Note 3)(IC= 1.5 Adc, VCE= 2.0 Vdc)

VBE(on) 1.2

Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product(IC= 1.0 Adc, VCE= 10 Vdc, f = 1.0 MHz)

fT2.0

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.2. Indicates JEDEC registered data.3. Pulse Test: Pulse Width 300s, Duty Cycle 2.0%.

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Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

10

0.10.004

7.0

5.0

1.0

0.7

0.50.3

0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 4.0

VCE= 2.0 V

VCE= 10 V

2.0 3.0

TJ= 150C

- 55C25C

3.0

2.0

0.2hFE

,DC

CUR

RENTGAIN

(NORMALIZED)

VCE

,COLLECTOR

-EMITTER

VOLTA

GE(VOLTS)

Figure 2. Collector Saturation Region

IB, BASE CURRENT (mA)

2.0

00.05

1.6

1.2

0.8

0.4

0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10 500

IC= 10 mA

5.0 7.0 20 30 50 70 100 200 300

100 mA 1.0 A 3.0 A

TJ= 25C

2.0

0.005

IC, COLLECTOR CURRENT (AMP)

0.01 0.02 0.03 0.05 0.2 0.3 1.0 2.0 4.0

1.6

1.2

0.8

0.4

0

TJ= 25C

VBE(sat)@ IC/IB= 10

VCE(sat)@ IC/IB= 10

VOLTAGE(VOLTS)

Figure 3. On Voltage

0.1 0.5 3.0

VBE@ VCE= 2.0 V

+ 2.5

Figure 4. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

*APPLIES FOR IC/IBhFE@ VCETJ= - 65C to +150C

V,

TEMP

ERATURECOEFFICIENTS(mV/C)

+ 2.0

+ 1.5

+ 0.5

0

- 0.5

- 1.0

- 1.5

- 2.0

- 2.5

VBfor V BE

*VCfor V CE(sat)

+ 1.0

0.005 0.01 0.020.03 0.05 0.2 0.3 1.0 2.0 4.00.1 0.5 3.0

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RBE

,EXTERNALBASE

-EMITTER

RESISTANCE(OHMS)

103

+ 0.4

Figure 5. Collector CutOff Region

VBE, BASE-EMITTER VOLTAGE (VOLTS)

102

101

100

10-1

,COLLE

CTOR

CURRENT(A)

IC10- 2

10- 3

+ 0.3 + 0.2 + 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 - 0.6

VCE= 30 Vdc

TJ= 150C

100C

25C

REVERSE FORWARD

ICES

107

20

Figure 6. Effects of BaseEmitter Resistance

TJ, JUNCTION TEMPERATURE (C)

40 60 80 100 120 140 160

106

105

104

103

102

VCE= 30 V

IC= 10 x I CES

IC= 2 x I CESIC ICES

(TYPICAL ICESVALUES

OBTAINED FROM FIGURE 5)

Figure 7. Switching Time Equivalent Test Circuit

APPROX

-11 V

TURN-ON PULSE

Vin

t1

VBE(off)

TURN-OFF PULSE

Vin

t3

t2

APPROX

-11 V

VCC

SCOPERB

Cjd

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10

1.0

Figure 11. Rating and Thermal Data

ActiveRegion Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.12.0 5.0 10 20 50 100

SECONDARY BREAKDOWN LIMIT

THERMAL LIMIT @ TC= 25CBONDING WIRE LIMIT

0.2IC,

COLLEC

TOR

CURRENT(AMP)

CURVES APPLY BELOW RATED VCEO

TJ= 150C

2N5194

dc

5.0 ms1.0 ms

100 s

2N5195

Note 1:

There are two limitations on the power handling ability of

a transistor; average junction temperature and second

breakdown. Safe operating area curves indicate IC VCElimits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 11is based on TJ(pk)= 150C. TCis

variable depending on conditions. Second breakdown pulselimits are valid for duty cycles to 10% provided T J(pk)150C. At highcase temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

Figure 12. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.010.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t)

,EFFECTIVETRANSIENT

THERMALRESISTANCE(NORMALIZ

ED)

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500

JC(max)= 3.12C/WD = 0.5

0.2

0.05

0.02

0.01SINGLE PULSE

0.1

DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA

tP

PP PP

t1

1/f

DUTY CYCLE, D = t1f =t1tP

PEAK PULSE POWER = PP

Figure 13.

A train of periodical power pulses can be represented by

the model shown in Figure 13. Using the model and the

device thermal response, the normalized effective transient

thermal resistance of Figure 12was calculated for various

duty cycles.

To find JC(t), multiply the value obtained from Figure 12

by the steady state value JC.

Example:The 2N5193 is dissipating 50 watts under the following

conditions: t1= 0.1 ms, tp= 0.5 ms. (D = 0.2).

Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,

the reading of r(t1, D) is 0.27.

The peak rise in junction temperature is therefore:

T = r(t) x PPx JC= 0.27 x 50 x 3.12 = 42.2C

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PACKAGE DIMENSIONS

TO225CASE 7709

ISSUE AC

DIM MIN MAX

MILLIMETERS

D 10.60 11.10E 7.40 7.80

A 2.40 3.00

b 0.60 0.90

P 2.90 3.30L1 1.27 2.54

c 0.39 0.63

L 14.50 16.63

b2 0.51 0.88

Q 3.80 4.20

A1 1.00 1.50

e 2.04 2.54

E

1 2 3

NOTES:1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.2. CONTROLLING DIMENSION: MILLIMETERS.3. NUMBER AND SHAPE OF LUGS OPTIONAL.

2X

2X

Q

D

L1

P

b2

be

c

L

A1

A

FRONT VIEW BACK VIEW

FRONT VIEW SIDE VIEW

12 3

3 2 1

4

PIN 4

BACKSIDE TAB

STYLE 1:PIN 1. EMITTER2., 4. COLLECTOR

3. BASE

ON Semiconductorand are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLCreserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including withoutlimitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applicationsand actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLCdoes not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended forsurgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation wherepersonal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC andits officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufactureof the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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2N5194/D

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