directors: professor anh-vu pham professor neville … millimeter wave research center directors:...
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Davis Millimeter Wave Research Center
Directors:Professor Anh-Vu Pham
Professor Neville Luhmann, Jr.
University of CaliforniaDavis Millimeter Wave Research Center
Davis, CA 95616
Phone: 530-752-7472Email: [email protected]
October 30, 2014
Core Team Members• Faculty: 8 core faculty members• Three new faculty hired 2011-2012• Graduate Students: ~50 and Postdocs and Staff: 16
Prof. Branner Prof. Islam Chancellor Katehi
Prof. PhamProf. LuhmannProf. Liu Prof. Momeni
Prof. Gu
Name of Interns Year CompanyJeffery Curtis 2011-2013 SamsungHuan Liao 2012 BroadcomJiali Lai 2012 CiscoAlexander Stameroff 2012 -2013 Agilent TechnologiesManish Mamidanna 2012-2014 L-3Thuy Nguyen 2013-2014 MACOMAkash Anand 2013 BAEQi Jiang 2014 BroadcomDanqing Fu 2014 GoogleFengqi Hu 2014 SkyworksTrong Pham 2014 Keysight Technologies
Recent Ph.D. Graduates and InternsName of Recent Ph.D. Graduates Year Current Position
John Yan 2012 RambusSam Chieh 2012 SPAWARCheng Chen 2012 L-3Hai Ta 2012 Skyworks SolutionsXiangyu Kong 2013 GoogleHuan Liao 2013 GoogleTianran Liang 2013 GoogleJiali Lai 2013 CiscoAnisullah Baig 2013 Microwave Device Group, Pakistan InstituteAlexander Stameroff 2013 Agilent/Keysight TechnologiesLiubing Yu 2014 BloombergQi Jiang 2014 GoogleJeffery Curtis 2014 Samsung
Facilities• CAD Labs (ADS, Cadence, HFSS, CST, MAGIC3D, Sonnet, etc)
• Antenna and integrated circuit laboratories
• Vacuum electronics, packaging, and microfabrication laboratories
• High power microwave/THz laboratory to 325 GHz
Research Areas• Millimeter-wave systems
-Radars, imaging, sensors, and communications
• RF/microwave/millimeter components and packaging-Integrated passive devices and antennas-MEMS
• RF/microwave/millimeter integrated circuits and modeling-MmW/THz Si CMOS and systems-GaAs and GaN integrated circuit design
• THz microfabricated vacuum electronics-Nano-machining, fabrication, devices and materials
Millimeter Wave/ THz MicrofabricatedVacuum Electron Devices (Prof. Luhmann)
DARPA HiFIVE 220 GHz SBTWT* NSF 263 GHz SBTWT for EPR
* Collaboration with Teledyne and CPI
DOE/ESA 346 GHz BWOs** for LOs‐ Staggered Vane Sheet Beam and Round Beam
** Collaboration with Lancaster University
Passive and Active Millimeter Wave Imaging and Visualization Diagnostics for Magnetic Fusion Plasmas
In collaboration with Professors Liu, Gu, and Pham
(Prof. Luhmann)
Leverage both low-loss quasi-optical channels and high speed electronic devices for high energy efficiency and wide bandwidth inter/intra-chip communications:
THz Interconnect (Prof. J. Gu)
• Planar silicon process compatible low loss and compact THz channels
• High power efficiency THz transmitter and high sensitivity THz receiver
Silicon Substrate Silicon Substrate
THz Physical Channels
THz active circuits with planar coupler
Collaborate with Prof. Liu and Prof. Luhmann
Z LPF
(f)
Frequency Discriminator based Phase Noise Filter (PNF)
This phase noise filtering technique aims to decouple the tradeoffs in clock generation between wide bandwidth and low phase noise to achieve ultra clean clock
CMOS Transmitter for Microwave Imaging Reflectometry (Prof. J. Gu)
CMOS based system-on-chip (SoC) realization can decrease the complexity, size, and power consumption of MIR systems Collaborate with Prof. Luhmann
Gas Spectrometer on a Chip• Provide high sensitivity in-situ
sensing of gas-phase molecules• Complement mass-spectrometry
and provide exquisite specificity• Promise isotopic abundance to
trace the origins of samples
Collaborate with JPL
RF-MEMS Technologies For Microwave/Millimeterwave Frequencies
Hot‐Switching RF‐MEMS Switch• Single‐actuator shunt‐series switch with enhanced hot‐
switching power handling and reliability• Excellent RF performance (@ 20 GHz): < 0.1‐dB insertion
loss; > 20‐dB isolation; 20x hot‐switching life time
Micromachined millimeter‐wave high‐purity frequency generation• State‐of‐the‐art semiconductor process achieves fmax of ~350
GHz; On‐wafer wavelength comes down to ~300 µm range• Above‐IC microfabrication can achieve distributed high‐Q
resonant structures to significantly improve phase noise performance
• Tunable with MEMS varactors
Example micro‐machined structures
1 mm
Micro‐machined evanescent‐mode cavity (copper) achieves resonant frequency of 70 – 200 GHz with Qu of 500 – 1000. * HFSS eigen‐mode simulation
500 µm
400 µm
20 µm
High‐Q Tunable Resonators/Filters/Oscillators High‐Q High‐Tuning‐Range Evanescent‐mode (Coaxial) Cavity Resonator• Octave tuning range (0.5–1 GHz, 1–3 GHz, 2–5
GHz, etc); • Qu > 1000 (@ 6 GHz) with MEMS tuners• Qu ~ 200 (@ 1 GHz) with Si diode varactors
Frequency and Bandwidth Tunable Filter• Substrate (PCB)‐integrated with Si varactors• Center frequency tuning: 0.5 – 1.2 GHz• BW tuning: 0 – 90 MHz, enabled by mixed‐mode
(dispersive) coupling• Adjustable band‐edge transmission zeroes (TZ)• Additional TZs by source‐load coupling
Cavity Resonator based Voltage Controlled Oscillator (VCO)• Effective Qu ~ 200 @ 1 GHz• Tunable from 780 MHz to 980 MHz, limited by
simplistic transistor amplifier design• Phase noise: Better than ‐120 dBc @ 100 kHz
offset; Better than ‐152 dBc @ 1 MHz offset
MEMS‐based Diode‐based
Track Record of Momeni’s GroupSignal Generation and Synthesis:
In 65 nm bulk CMOS, we have implemented:
• A 482 GHz source with 0.16 mW output power,• A 244 GHz frequency multiplier with 50 GHz tuning
range and 0.22 mW output power,• A 290 GHz source with 0.76 mW output power and 13
GHz bandwidth.
In SiGe, we have implemented:
• A 300GHz Frequency Synthesizer with 7.9% Locking Range in 90 nm SiGe
• A 200 GHz source with 0.2 mW output power and 8 GHz bandwidth in 130 nm SiGe
Signal Amplification:
• A 260 GHz amplifier with 10 dB gain and 0.4 mWsaturated output power in 65 nm CMOS,
• A 107 GHz amplifier with 12.5 dB gain and 1.7 mWsaturated output power in 130 nm CMOS,
482 GHz Source
1.6m
m
Current Projects in Momeni’s Group
• Mm-Wave/Terahertz Scalable Antenna Array/VCO Structures: The scalable standing wave architecture would allow power combining of as many transistors as needed. (~15 dBm (0 dBm) radiated power at 300 GHz (500 GHz) in SiGe process)
• Mm-Wave/Terahertz PLL-Based and Standing wave-based Phased Array for Wideband Systems: Beam steering with no conventional phase shifters.
• Ultra Wide Band VCO: High-power and high tuning range (>50%) VCO at mm-wave and terahertz frequencies.
• Extremely Wide-Band Amplification: Using gain boosting mechanisms to reach maximum gain and bandwidth at the same time. (50 – 180 GHz operation in SiGe process)
• Mm-Wave High Power Amplification: Transistor stacking and gain boosting maintain the high output power and efficiency at the same time. (140 GHz amplifier with ~1 W output power in SiGe process)
Si
High Power VelocityMatched Distributed Silicon Photodetectors
Coplanar Stripes (CPS)
Photocurrents added in phase through a velocity-matched RF transmission line
Active photodiode
Passive optical
wagevuide
Nano-pillars for photon trapping and efficient photodetection
Si (SOI) SubstrateFiber
Prof. M. Saif Islam
Islam and Wu, IEEE MTT
Suppression of RIN and EDFA-added Noise by Balanced Photodetector & Possible
Applications
OpticalFiber Input
OpticalBeam-FormingNetwork
Beam-Steering Array Using Integrated PD and Antenna
Optical Fiber
Photodiode Optical Waveguide
Antenna CPS
• The RIN and the EDFA-added noise is suppressed by 24 dB
• The signal is enhanced by 6 dB• SNR improves by 30dB
Noise floor at -44dB
Single receiver
Noise floor at -68dB
Balanced distributed receiver
24 dB
Microwave Output
Optical Input
+ - +
- + - +
-
Optical waveguide CPW
Islam and Wu, IEEE MTT
High Efficiency Power Amplifiers (Prof. Pham)• 5G Doherty power amplifier• Envelop Tracking PA
(>100 MHz)
Ka-band GaAs Doherty PA and Measurements
• Fully integrated GaN F-1
Ku-band GaN PA, PAE ~ 50% PAE and POUT~ 8-Watt
• Non-linear Tapered Distributed GaN PA
1-21 GHz, 5-Watt, PAE ~ 20%, OIP3 > 45 dBm
Linearization Techniques for mmW Circuits• Wide bandwidth linearization techniques using 2nd harmonic injection
Second Harmonic Injection at both PA Input and Output IM3 Improvement and
Gain ReductionEfficiency Enhancement
Linearization Techniques for mmW Circuits• Device to circuit techniques to achieve wide bandwidth linearization
Gd3 Cancellation GaAs Devices Circuit Techniques Simulation Results
RF/Millimeter Wave Packaging• 46:1 bandwidth ratio defected
ground phase compensation balun
• >800 W balun
• Ka-band receiver module
• Radar front-end to 220 GHzMmW near hermetic packages
Liquid Crystal Polymer laminated on Si, GaAs, and PCB
W-band antenna
Recent AchievementsProfessor Saif IslamNSF Major Research Instrument Award: “MRI: Acquisition of a Plasma Enhanced Chemical Vapor Deposition (PECVD) Tool with Inductively Coupled Plasma (ICP).”
NSF Partnership for Innovation Award: “Micro and Nanofabricated Semiconductor and Ceramic Blade Arrays for Surgical and Hair Removal Applications.”
Professor Jane GuNSF CAREER Award: “Terahertz Interconnect, the Last Centimeter Data Link.”
ONR Award: “Passive Wideband Interferometer enabled by non-Foster Quasi-Constant Phase Shifter for Error Feedback Transmitter.”
NASA Award: “Spectrometer On a Chip.”
Professor Omeed MoneniNSF Award: “Terahertz PLL-Based Phased Array for Wide Band Radar/Sensing Systems in Silicon.”
Professor Leo LiuNSF Award for Research on Enhancing Access to Radio Spectrum (EARS): “Reconfigurable Bandpass Sampling Receivers for Software-Defined Radio Applications.”
Education ProgramEEC130A - Introductory Electromagnetics
EEC130B – Intro. Electromagnetics II
EEC132A – RF and Microwaves in Wireless Communication
EEC132B – RF and Microwaves inWireless Communication
EEC132C – RF Amplifiers, Oscillatorsand Mixers
EEC133 – Electromagnetic Radiationand Antenna
EEC134 – RF Systems
EEC 230 – Electromagnetics
EEC228 – Advanced Microwave andAntenna Design Techniques
EEC232A – Advanced Applied EM
EEC222 – RF IC Design
EEC233 – High Speed Signal Integrity
EEC289K – ICs for Wireless Communications
EEC289K – THz & mmW IC Design
EEC289K - RF/Microwave Filter Design
EEC 229 RF-MEMS & Adaptive Wireless Systems
EEC234A/B/C – Vacuum Electron Beam Devices