department of microtechnology and nanoscience chalmers...
TRANSCRIPT
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FerroelectricsMaterial Properties, Processing, and Microwave
Applications
Spartak Gevorgian
Department of Microtechnology and NanoscienceChalmers University of Technology
Gothenburg, Sweden
Norwegian IEEE MTT/AP ChapterSINTEF, Trondheim, March, 2006
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Outline
♣Introduction
♣Materials (Bulk, Thick and thin Film)
♣Devices and Circuit Applications
♣Concluding Remarks: Problems and
Perspectives
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WiredCommunicationNew York 1921
What is this about?
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WirelessCommunicationGothenburg, Sweden 2001
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Electronics DNA: Search forcomponents with enhanced performances
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Dielectric withelectric field dependent
permttivity
Electrode
Electrode
Electrode
Electrode
Ferroelectrics: Multifunctional Dielectrics
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Ferroelectric Compositions Considered forMicrowave Applications
ABO3 Perovskites:
CaxSr1-xTiO3
KxLi1-xTaO3KxNa1-xNbO3PbxZr1-xTiO3
BaxSr1-xTiO3x=0 -1
Ferroelectric (polar) and paraelectric phases
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Polarization of Paraelectric Perovskites
O
AB
E
ε
E
P
E
Nonlinear polarization
Field dependent permittivity
)()E()(T
00ε
εε −=
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BaxSr1-xTiO3(BST) at Room Temperaturex=0.1-1.0
Smolensky & Isupov (1954)
0
2
4
6
8
10
12
14
16
50 100 150 200 250 300 350 400 450Temperature, K
Die
lect
ric c
onst
ant,
ε ×10
-3
1.0
0.9
0.8
0.70.6
0.50.40.3
0.2
0.1
b)
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Ba0.8Sr0.2TiO3+MgO. MgO: 0-10%From Doping to Composite
Su & Button (2004)
0
2000
4000
6000
8000
-80 -60 -40 -20 0 20 40 60 80
Temperature, °C
Per
mitt
ivity
0%
1%2%
1.5%
0.5%
10%4%
Doping
Com
posi
te
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Ferroelectrics- Features Attractive for Microwave Applications-1
Dielectric properties:
Permittivity ε (100-20000) - small size devices:
Size ~1/ √ε
Electric field dependent - tuneable and
nonlinear devices
Loss tangent tanδ- typically 0.0001-0.05
Tuning speed- < 1.0 ns
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Electrical properties:
Resistivity- undoped >10 8- 10 10 Ohm cm
Leakage currents- extremely lowBreakedown field- >50-100 kV/cmMetalic conductivity- if highly doped (transparent
electrode) Bandgap- Eg>3.0 eVMobility- 2D electron gas at low
temperature-15000cm2/Vs
Ferroelectrics- Features Attractive for Microwave Applications-2
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♣ Bulk- single crystal and ceramics
♣ Thick film- HTCC, LTCC
♣ Thin film- single crystal polycrystalline
Ferroelectric Material Technologies Considered for Microwave Device Fabrication
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Bulk Single Crystal (SrTiO3)
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Four Pole Tuneable Bandpass Filter Based on SrTiO3 Discs
Duroid SrTiO3 disk resonator
SrTiO3 disksDiameter: 7.0 mmThickness: 0.5 mmPlates: Cu/Ti
Deleniv et. al. Proc. EuMC’2002
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Four Pole Tuneable Bandpass Filter Based on SrTiO3 Discs
3 dB bandwidth-2.0%;Tuneability-8%; Losses-4.0 dB
-80
-70
-60
-50
-40
-30
-20
-10
0
0.4 0.45 0.5 0.55 0.6 0.65
Tra
nsm
issi
on c
oeff
icie
nt, S
21 (d
B)
Frequency, GHz
0 V300 V
500 V
T=77K
-20
-15
-10
-5
0
0.4 0.45 0.5 0.55 0.6 0.65
Ref
lect
ion
coef
ficie
nt, S
21 (d
B)
Frequency, GHz
0 V
300 V
500 V
T=77K
Deleniv et. al. Proc. EuMC’2002
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Bulk Ceramic BaxSr1-xTiO3
(Project MELODY)
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Beam Steering Lens
Tageman et. al. Proc. EuMC’2005
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Tuneable Chip Components: Resonators Capacitors and Delay Lines
9,22 mm
1,51 mm
Pd/AgPd
BST68/32 / MgO 60mol%6 layers
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LTCC and HTCC BaxSr1-xTiO3
(Project MELODY)
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HTCC Phase Shifters in Project MELODY
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• Development of tunable ferroelectric LTCC compositionsSintering temperature: <950 oC
ε=100-1000; tanδ < 0.01 at 2-50 GHz; Tunability >10%
• Development of processing routes for single and multilayer ferroelectric films with:
Thickness 5-50 μm; Area 100x100 mm2
• Development of fabrication routes for electrodes
LTCC OBJECTIVES
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LTCC BSTO Performance
140
150
160
170
180
190
200
210
0 5 10 15 20 25 30
Extracted dielectric
permittivity, ε r
Frequency, GHz
2V/μm
4V/μm
No bias
tanδ∼f; (~0.12@25GHz)
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LTCC Phase Shifters in Project MELODY
~1.5mm
~9deg/dB @25GHz
~20deg/dB @10GHz
~10deg/dB @25GHz
~50deg/dB @3.5GHzTEMEX
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Measured Phase LTCC Shifter Performance
-30
-25
-20
-15
-10
-5
0
5 10 15 20 25 30
Matching S11, dB
Frequency, GHz
No bias
4V/μm2.4V/μm
1.25V/μm
0
50
100
150
200
250
5 10 15 20 25 30Phase shift Δφ, deg
Frequency, GHz
1.25V/μm
2.4V/μm
4V/μm
Matching shows weak dependance on DC biasing!!!
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Tuneable Power Splitters
Coplanar Plate (CPS)
Parallel Plate
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Tuneable Matching Networks
Port2Port1
V1
V2
θ1(V1)
θ2(V2)Coplanar Plate
Parallel Plate
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Thin film BaxSr1-xTiO3
(Chalmers)
D. Kuylenstierna
M. Norling
A. Vorobiev
A. Deleniv
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Growth of BST films by laser ablation
1 Hz
Rotating TargetBa0.25Sr0.75TiOx
Heater at 650°C
Laser0.4 mbar O2
PLD System -MC2 Process Lab Chalmers
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Growth of BST films by rf magnetron sputtering
Nordiko 2000 Sputter
- +magnet system
BSTO6” target
Ar ions
3” Pt/Au/Sisubstrate
halogen lamps
radiation heater
Ar/O2 (10/5)50 mTorr
200W rf
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Integration Issues
Crystalline: MgO, LaAlO3, Al2O3
Amorphous: Oxidized Silicon, Fused Silica
Substrates for ferroelectric microwave devices
Metal: Pt, Au, Cu (with diffusion stop buffer)
Polycrystalline: Al2O3
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BSTPt
nucleation center
TEM and SEM images of the BSTO filmsin Thin Film Parallel-Plate Varacotors
Bottom Pt/Au
Top Au/Pt
BSTO
TEM image by Prof. E. Olsson, Chalmers
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Pt (50 nm)
Au
Pt (200 nm)-bottom plate
SiO2 (0.43 μm)
Si substrate 0.5 mm
AuAu (0.5 μm)
-top plate
SrTiO3 (0.56 μm)
Test StructureCross Section and Top Electrode
STO or BSTO
TopPlateAu/Pt
Top ground plate, Au/Pt
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Varactor Performance at 1.0 MHz
1.2
1.4
1.6
1.8
2
2.2
2.4
100
150
200
250
300
-30 -20 -10 0 10 20 30
Cap
acita
nce
(pF)
Q-f
acto
r
Voltage (V)
BST/Pt
BST/Pt/Au
A. Vorobiev, P. Rundqvist, K. Khamchane, and S. Gevorgian, Appl. Phys. Lett. 83, 3144 (2003)
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• No dispersion in permittivity and tuneability
• Tuneability > 40 %
Microwave Performance at V=0 and 20V
0
0.01
0.02
0.03
0 10 20 30 40
tanδ
Frequency (GHz)
0 V
20 V
0.05
0.1
0.15
0.2
0.25
0.3
0 10 20 30 40
Cap
acita
nce
(pF)
Frequency (GHz)
0 V
20 V
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Technology Comparison. E=0
Shown are also:Si varactor (Metelics, MSV34,060-C12, Q=6500 @ 50 MHz, V=-4V)
GaAs HBV (Darmstadt University of Technology, fcut-off=370 GHz)
GaAs dual Schottky diode (UMS, DBES105a,fcut-off=2.4 THz)10
100
1 10
Q-f
acto
r
Frequency (GHz)
200
GaAs-HBV
Si
GaAs-Schottky
BST/Pt/Au (PLD)
BST/Pt (PLD)
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BSTO Potential for Tuneable TFBARs
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Acoustic Impedances
63.8٠106
300 nm BSTO (42.2)50 nm Pt (57.6)
Au (63.8)
150 nm Pt (57.6)
12.6
Si (19.7)0.45 μm SiO2
0.5 μm Au (63.8)
Acoustic impedance
Dis
tanc
e fr
om su
rfac
e
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0
0.005
0.01
0.015
0.02
8 8.5 9 9.5 10 10.5 11 11.5 12
Re(
Z)/5
0
Frequency, GHz
20 V
10 V
0 V
Au/Pt/STO/Pt/SiO2/Si
Real Part of Impedance (Measured)
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0.02
0.025
0.03
0.035
0.04
9 9.5 10 10.5 11Frequency, GHz
20 V
0 V
Re{
Z}/Im
{Z}
DC Field Dependent Resonance (Measured)
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Device Applications
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Main Device Fabrication Steps(Prepatterning of bottom electrode)
Deposition prepatterning of Pt/Au/Pt (50/500/100nm) bottom electrode
Growth of BST film (300nm) by PLD650 °C, 0.4 mbar
Top electrode formation by lift-off process
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Typical Varactor Structures
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Tuneable Delay Lines
Type2
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15 20 2510 30
7.0E-11
7.5E-11
8.0E-11
6.5E-11
8.5E-11
freq, GHz
time
(s)
0V
30V
)V(LC=τ
15 20 25 3010 35
-4.5
-4.0
-3.5
-3.0
-5.0
-2.5
-25
-20
-15
-10
-30
-5
freq, GHz
dB(S
(1,1))dB(S
(1,2
))
S-parameters (0V)
Tuneable Delay Line Performance
D. Kuylenstierna et. al, EuMC’2004
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Lumped Element Tunable Resonators and Filters
(a) (b)
(c) (d)
CC CC
CS1
CS2
LS2
LS1
CC CC
CS1/2
CS2/2
4LS1
LS2
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20 40 600 80
-60
-40
-20
-80
0
freq, GHz
dB(S
21)
20 40 600 80
-30
-20
-10
-40
0
freq, GHz
dB(S
(1,1
))Two-Pole Lumped Element Tunable Filter
(simulated)
D. Kuylenstierna et. al,Si RFIC’2006
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20 30 40 50 6010 70
-8
-6
-4
-2
-10
0
-40
-30
-20
-10
-50
0
freq, GHz
dB(S
11) dB(S21)
35 40 4530 50
-5
-4
-3
-2
-6
-1
freq, GHz
dB(S
11)
Single –Pole Lumped Element Filter(measured)
D. Kuylenstierna et. al,Si RFIC’2006
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Tuneable Phase Shifters
3.6 mm
DC bias
DC bias
D. Kuylenstierna et. al, IEEE Micr. Wierless Comp. Letters
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15 20 2510 30
-50
-40
-30
-20
-10
-60
0
-20
-15
-10
-5
-25
0
freq, GHz
dB(S11)dB(S
21)
Tuneable Phase ShiftersMesured S-parameters
Relatively high losses due to steps and surface conductivity of Si
D. Kuylenstierna et. al, IEEE Micr. Wierless Comp. Letters
15 V
0 V
15 V
0 V
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15 20 2510 30
20
40
60
0
80
freq, GHz
Phas
e sh
ift [d
B]
Tuneable Phase ShiftersMesured Phase Shift Under 15 V
D. Kuylenstierna et. al, IEEE Micr. Wierless Comp. Letters
Expected phase shift under 25 V: ~90o
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Problems and Perspectives
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Ferr
oele
ctri
c Paraelectric
Bax1Sr1-x1TiO3Bax2Sr1-x2TiO3
tanδ
Perm
ittiv
ity, ε
T2T1
Los
ses,
tanδ
ε
Temperature Stabilization (Materials/design based)
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MgO substrate
2g
Ba0.75Sr0.25O3
Au
Ba0.25Sr0.75O3
Au
105
110
115
120
125
130
26
28
30
32
34
36
38
0 50 100 150 200 250 300 350
Cap
acita
nce,
fF
Q-f
acto
r
Temperature, K
C
Q
Temperature Dependence (Materials/Design Based- Measured)
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Temperature Stabilization (Circuit Topology Based)
VDC
Vv
VCVaractor C
VTCTL
DC bias network
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0
0.05
0 .1
0.15
0 .2
0.25
0 .3
0.35
0 50 100 150 200 250 300
Cap
acita
nce,
pF
T em pera ture , K
E =50 kV /cm
100
100
50
N ot s tab ilised
S tab ilised
Temperature Stabilization (Circuit Topology Based-Summation)
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Perspective applications :
Project HiMission (EUREKA/MEDEA+/VINNOVA )
Phase shiftersTuneable delay LinesTuneable filtersVCO
Project Nanostar (FP6, EU) VaractorsTuneable TFBARsVCOs
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End