ð× u z ¢ rs-232 m - analog.com · adm3251e rev. e | page 3 of 16 0 @ í w1. l m µ Æ µ l w µ...
TRANSCRIPT
ADI ADI ADI
RS-232
/
ADM3251E
Rev. E Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2008–2010 Analog Devices, Inc. All rights reserved.
0738
8-00
1
DECODE
RECT REG
V–
C40.1μF16V
VOLTAGEDOUBLER
C1+ C1– V+ VISO C2+ C2–
R
T
VOLTAGEINVERTER
VCC
ROUT
TIN
GND GNDISO
RIN*
TOUT
ADM3251E
OSC
ENCODE
ENCODE
DECODE
*INTERNAL 5k PULL-DOWN RESISTOR ON THE RS-232 INPUT.
0.1μF
C30.1μF10V
C20.1μF16V0.1μF
C10.1μF16V
1.
2.5 kV ( )RS-232
isoPower DC/DC
460 kbps
1 Tx 1 Rx
EIA/TIA-232E
RIN
TOUT
ESD
±8 kV:
±15 kV:
0.1μF
>25 kV/μs
UL
1 2500 Vrms UL 1577
VDE
DIN EN 60747-5-2 (VDE 0884 Teil 2): 2003-01
CSA #5A
-40°C +85°C
20 SOIC
RS-232
/
ADM3251E 2.5 kV RS-232/ V.285 V RIN TOUT
ESDRS-232
ADM3251E isoPower™DC-DC Analog Devices, Inc.(
ADI) iCoupler®DC-DC
ADM3251E isoPower(PCB)
AN-0971 isoPower
ADM3251E EIA/TIA-232E ITU-T V. 28460 kbps
/ 0.1 μF5 V
ADM3251E 20 SOIC−40°C +85°C
ADM3251E
Rev. E | Page 2 of 16
................................................................................................... 1 ................................................................................................... 1
........................................................................................... 1 ................................................................................................... 1
........................................................................................... 2 ........................................................................................... 3
.................................................................................. 5 .................................................................................. 5
............................................................ 5DIN EN 60747-5-2 (VDE 0884 Teil 2):2003-01
............................................................................................... 6 ............................................................................. 7
ESD ................................................................................... 7 ..................................................................... 8
.................................................................................. 9
........................................................................................ 11 .............................................................. 11 .............................................................. 12
5.0 V EIA/TIA-232E .................................... 12EIA/TIA-232E 5 V ....................................... 12
................................................................................ 12 .................................................................................... 12
................................................................................ 12 ........................................................................................ 13
PCB ................................................................................ 13EMI PCB ............................................................ 13
....................................................................... 14 ........................................................................................ 15
................................................................................ 15
2010 5 — D E .................................................................................. 1
4 ............................................................................................. 5
2010 3 — C D ..................................................................... 1
4 5 ...................................................................................... 5“DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
( )” “DIN EN 60747-5-2 (VDE 0884 Teil 2):2003-01 ” ..................................................................................... 6
6 .................. 6EMI PCB .................... 13
9 10 ........................................................ 13PCB ........................................................................ 13
.......................................................... 1422 ................................................................... 14
2010 1 — B C 4 ............................................................................................. 5
2009 1 — A B 1 .................................................................................. 1
ICC(DISABLE) 2.5 mA ............. 44 ............................................................................................. 513 ......................................................................................... 11
2008 9 — 0 A 1 ................................................................... 32 ................................................................... 4
................................................................................ 14
2008 7 — 0:
ADM3251E
Rev. E | Page 3 of 16
1./
VCC 4.5 5.5 V DC-DC VCC(ENABLE)
1 4.5 V DC-DC VCC(ENABLE)
1 3.7 V
DC-DC ICC(ENABLE) 110 mA VCC= 5.5 V,
145 mA VCC = 5.5 V, RL = 3 kΩ VISO
2 5.0 V IISO = 0 μA
TIN ITIN −10 +0.01 +10 μA
VTINL 0.3 VCC V VTINH 0.7 VCC V
ROUT VROUTH VCC − 0.1 VCC V IROUTH = −20 μA
VCC − 0.5 VCC − 0.3 V IROUTH = −4 mA VROUTL 0.0 0.1 V IROUTH = 20 μA
0.3 0.4 V IROUTH = 4 mA RS-232
RIN EIA-232 3 −30 +30 V EIA-232 0.6 2.0 V EIA-232 2.1 2.4 V EIA-232 0.1 V EIA-232 3 5 7 kΩ
TOUT (RS-232) ±5 ±5.7 V RL= 3 kΩ
300 Ω VISO = 0 V (RS-232) ±12 mA
460 kbps RL= 3 kΩ 7 kΩ, CL= 50 pF 1000 pF
tPHL 190 ns tPLH 135 ns
650 ns RL = 3 kΩ, CL = 1000 pF 80 ns 70 ns
3 5.5 10 30 V/μs +3 V −3 V −3 V +3 V, VCC= +3.3 V, RL= 3 kΩ, CL= 1000 pF, TA= 25°C
/ tR/tF(10% 90%) 2.3 ns CL= 15 pF CMOS
4 25 kV/μs VCM= 1 kV =800 V4 25 kV/μs VCM= 1 kV =800 V
ESD (RIN TOUT ) ±15 kV ±8 kV
1 / DC-DC / VCC2 VISO3 4 VCM VCM
/ TA = 25°C VCC = 5.0 V DC-DC
ADM3251E
Rev. E | Page 4 of 16
2./
VCC 3.0 3.7 V DC-DC VCC(ENABLE)
1 3.7 V DC-DC
VISO2 3.0 5.5 V
ICC(DISABLE) 2.5 mA IISO(DISABLE) 12 mA VISO = 5.5 V, RL = 3 kΩ IISO(DISABLE) 6.2 mA RL = 3 kΩ
TIN
ITIN −10 +0.01 +10 μA VTINL 0.3 VCC V VTINH 0.7 VCC V
ROUT VROUTH VCC − 0.1 VCC V IROUTH = −20 μA
VCC − 0.5 VCC − 0.3 V IROUTH = −4 mA VROUTL 0.0 0.1 V IROUTH = 20 μA
0.3 0.4 V IROUTH = 4 mA RS-232
RIN EIA-232 3 −30 +30 V EIA-232 0.6 1.3 V EIA-232 1.6 2.4 V EIA-232 0.3 V EIA-232 3 5 7 kΩ
TOUT (RS-232) ±5 ±5.7 V RL = 3 kΩ
300 Ω VISO = 0 V (RS-232) ±11 mA
460 kbps RL = 3 kΩ 7 kΩ, CL = 50 pF 1000 pF
tPHL 190 ns tPLH 135 ns
650 ns RL = 3 kΩ, CL = 1000 pF 80 ns 55 ns
3 5.5 10 30 V/μs +3 V −3 V −3 V +3 V, VCC = 3.3 V, RL = 3 kΩ, CL = 1000 pF, TA = 25°C
/ tR/tF(10% 90%) 2.3 ns CL= 15 pF CMOS
4 25 kV/μs VCM= 1 kV =800 V4 25 kV/μs VCM= 1 kV =800 V
ESD (RIN TOUT ) ±15 kV ±8 kV 1 / DC-DC / VCC2 VISO3 4 VCM VCM
/ TA = 25°C VCC = 3.3 V(DC-DC ) VISO = 3.3 V
ADM3251E
Rev. E | Page 5 of 16
3.
( ) RI-O 1012 Ω ( ) CI-O 2.2 pF f = 1 MHz
CI 4.0 pF IC θJA 47.05 °C/W
4.UL1 VDE2 CSA
1577
E214100
DIN EN 60747-5-2 (VDE 0884 Teil 2):2003-01
2471900-4880-0001/123328
CSA #5A
CSA 60950-1-07IEC 60950-1 400 V rms (566 V )
2268268 1 UL1577, ADM3251E 1 ≥ 3000 V rms ( 5 μA)2 ADM3251E 1 ≥ 4000 V rms ( 5 pC)
5.
2500 V 1( ) L(I01) 7.7 mm
L(I02) 4.16 mm
0.017 mm ( ) CTI >175 V DIN IEC 112/VDE 0303 Part 1
IIIa 50 VIORM 425 V
ADM3251E
Rev. E | Page 6 of 16
DIN EN 60747-5-2 (VDE 0884 Teil 2):2003-01
6.
DIN VDE 0110 ≤ 150 V rms I IV ≤ 300 V rms I III
40/105/21 2 VIORM 424 V
b1 VIORM × 1.875 = VPR, 100%tm= 1 < 5 pC
VPR 795 V
tTR= 10 VTR 4000 V TS 150 °C IS1 531 mA
TS VIO= 500 V RS >109 Ω
ADM3251E
Rev. E | Page 7 of 16
7.
VCC, VISO −0.3 V +6 V V+ (VCC − 0.3 V) +13 V V− –13 V +0.3 V
TIN −0.3 V (VCC + 0.3 V) RIN ±30 V
TOUT ±15 V ROUT −0.3 V (VCC + 0.3 V)
TOUT
θJA 47.05°C/W
−40°C +85°C −65°C +150°C
( 30 ) 260°C
ESD
ESD( )
ESDESD
ADM3251E
Rev. E | Page 8 of 16
NC 1
VCC 2
VCC 3
GND 4
VISO20
V+19
C1+18
C1–17
GND 5 TOUT16
GND 6 RIN15
GND 7 C2+14
ROUT 8 C2–13
TIN 9 V–12
GND 10 GNDISO11
NC = NO CONNECT
ADM3251ETOP VIEW
(Not to Scale)
0738
8-00
2
2.
8.
1 NC 2, 3 VCC VCC 0.1 μF VCC 4.5 V 5.5 V
DC-DC 3.0 V 3.7 VDC-DC
4, 5, 6, 7, 10 GND 地。8 ROUT CMOS9 TIN ( ) TTL/CMOS11 GNDISO 12 V− 13, 14 C2−, C2+ C2
0.1 μF 10 μF 15 RIN RS-23216 TOUT ( ) RS-232 17, 18 C1−, C1+ C1
0.1 μF 10 μF19 V+ 20 VISO VISO 0.1 μF
DC-DC VISODC-DC 3.0 V 5.5 V
ADM3251E
Rev. E | Page 9 of 16
12
8
4
0
–4
–8
–120 200 400 600 800 1000
LOAD CAPACITANCE (pF)
Tx
OU
TP
UT
(V
)
0738
8-00
4
Tx LOW (VCC = 5V)
Tx LOW (VISO = 3.3V)
Tx HIGH (VCC = 5V)
Tx HIGH (VISO = 3.3V)
3. /(460 kbps)
12
10
8
6
4
2
0
–2
–4
–6
–8
–104.5 4.7 4.9 5.1 5.3 5.5
VCC (V)
Tx
OU
TP
UT
(V
)
0738
8-00
5
Tx OUTPUT HIGH
Tx OUTPUT LOW
4. / VCC (RL = 3 kΩ)
12
8
4
0
–4
–8
–12
10
6
2
–2
–6
–10
3.0 3.5 4.0 4.5 5.0 5.5VISO (V)
Tx
OU
TP
UT
(V
)
0738
8-00
9
Tx OUTPUT HIGH
Tx OUTPUT LOW
5. / VISO (RL = 3 kΩ)
12
10
8
6
4
2
0
–2
–4
–6
–8
–10
–120 1 2 3 4
LOAD CURRENT (mA)
Tx
OU
TP
UT
(V
)
0738
8-00
6
Tx OUTPUT LOW (VCC = 5V)
Tx OUTPUT LOW (VISO = 3.3V)
Tx OUTPUT HIGH (VCC = 5V)
Tx OUTPUT HIGH (VISO = 3.3V)
6. /
15
10
5
0
–5
–10
–150 1 2 3
LOAD CURRENT (mA)
V+,
V–
(V)
0738
8-00
7
4
V+ (VCC = 5V)
V– (VCC = 5V)
V+ (VISO = 3.3V)
V– (VISO = 3.3V)
7. V+, V−
400
V+
V–
350
300
250
200
150
100
50
04.50 4.75 5.00 5.25 5.50
VCC (V)
CH
AR
GE
PU
MP
IMP
ED
AN
CE
()
0738
8-00
8
8. VCC
ADM3251E
Rev. E | Page 10 of 16
400
V–350
300
250
200
150
100
50
03.00 3.25 3.50 3.75 4.00 4.25 4.50 4.75 5.00 5.25 5.50
VISO (V)
CH
AR
GE
PU
MP
IMP
ED
AN
CE
()
0738
8-01
0
V+
9. VISO
200
180
160
140
120
100
80
60
40
20
00 46 92 138 184 230 276 322 368 414 460
DATA RATE (kbps)
SU
PP
LY
CU
RR
EN
T (
mA
)
0738
8-00
3
VCC = 4.5V
VCC = 5.5V
VCC = 5V
10.
0738
8-01
2
5V/D
IV5V
/DIV
TIME (500ns/DIV)
2
1
VCC = 5VLOAD = 3k AND 1nF
11. 460 kbps
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
04.50 4.75 5.00 5.25 5.50
VCC (V)
TIN
VO
LT
AG
E T
HR
ES
HO
LD
(V
)
0738
8-01
1
HIGH THRESHOLD
LOW THRESHOLD
12. TIN VCC
ADM3251E
Rev. E | Page 11 of 16
0738
8-01
3
DECODE
RECT REG
V–
C40.1μF16V
VOLTAGEDOUBLER
C1+ C1– V+ VISO C2+ C2–
R
T
VOLTAGEINVERTER
VCC
ROUT
TIN
GND GNDISO
RIN*
TOUT
ADM3251E
OSC
ENCODE
ENCODE
DECODE
*INTERNAL 5k PULL-DOWN RESISTOR ON THE RS-232 INPUT.
0.1μF
C30.1μF10V
C20.1μF16V0.1μF
C10.1μF16V
13.
++
C30.1μF10V
+ C10.1μF16V
+ C20.1μF16V
0.1μF
+C40.1μF16V
EIA/TIA-232E OUTPUT
EIA/TIA-232E INPUT
VISO
V+
C1+
C1–
TOUT
RIN
C2+
C2–
V–
GNDISO
0738
8-01
4
ISOLATIONBARRIER
CMOS OUTPUT
CMOS INPUT
4.5V TO 5.5V
VCC
ROUT
TIN
GND
0.1μFADM3251E
14. DC-DC
(VCC = 4.5 V 5.5 V)
++
C30.1μF10V
+ C10.1μF16V
+ C20.1μF16V
0.1μF
+C40.1μF16V
EIA/TIA-232E OUTPUT
EIA/TIA-232E INPUT
VISO
V+
C1+
C1–
TOUT
RIN
C2+
C2–
V–
GNDISO
0738
8-01
5
ISOLATIONBARRIER
CMOS OUTPUT
CMOS INPUT
3.0V TO 3.7V
3.0V TO 5.5VISOLATED SUPPLY
VCC
ROUT
TIN
GND
0.1μFADM3251E
15. DC-DC
(VCC = 3.0 V 3.7 V)
ADM3251E 2.5 kV RS-232
5.0 V EIA/TIA-232E EIA/TIA-232E 5.0 V
TIN TTL/CMOS TIN
(GND)(GNDISO)
(RIN) RS-232RIN ROUT
iCoupler
VCC DC-DC
ADM3251E DC-DCVCC
5.0 V VISO VISO
ADM3251E DC-DCADM3251E DC-DC VCC
VCC 4.5 V 5.5 VDC-DC DC-DC
3.0 V 3.7 V VCC
VISO VISO 3.0 V5.5 V 12 mA( )
IISO ADM3251E
ADM3251E
Rev. E | Page 12 of 16
GND
C3C1
S1
S2
S3
S4
V+ = 2VISO+ +
INTERNALOSCILLATOR
VISO
VISO
0738
8-01
6
16.
GNDISO
C4C2
S1
S2
S3
S4
GNDISO+ +
INTERNALOSCILLATOR
V+
V– = –(V+)
FROMVOLTAGEDOUBLER
0738
8-01
7
17.
0V
RATED PEAK VOLTAGE
0738
8-01
9
18.
0V
RATED PEAK VOLTAGE
0738
8-02
0
19.
0V
RATED PEAK VOLTAGE
0738
8-02
1
20.
200 kHz5.0 V ±10.0 V
16 17C1 5.0 V 10.0 V
C2 +10.0 V −10.0 VC3 V+ VISO V+
GNDISO
C3 C4C1 C2 C3 C4
( 10 μF)
5.0 V EIA/TIA-232E
5.0 V RS-232VCC = 5.0 V RS-232
±10 V
ADM3251E 3
7 θJA θJA
JEDEC 4 PCBPCB PCB
ADIADM3251E
ADM3251EiCoupler
18 1920
EIA/TIA-232E 5 V
RS-2325.0 V 5 kΩ
±30 V5 kΩ 0 V
GND 10.1 V
ADM3251E EIA/TIA-232ERS-232 460
kbps
ADM3251E
Rev. E | Page 13 of 16
9. PCB
1 VCC
234
NC
VCC
VCC
GND
VISO
V+
C1+
C1–
GND TOUT
GND RIN
GND C2+
ROUT C2–
TIN V–
GND GNDISO
0738
8-01
8
ADM3251E
VIA TO GNDISO
0.1μF
C3
C1
C2
0.1μF
NC = NO CONNECT
C4
10. EMIEMI 300 MHz 600 MHz
PCB 48 dB 53 dB PCB 36 dB 32 dB
EMI 12 dB 21 dB
21.
PCB
ADM3251E( 21) VCC
3 4 VISO
19 20 0.01 μF 0.1 μF20 mm
PCBPCB 21
4 5 6 7 10 11
EMI PCB
2 PCB EMIFCC B
3m 46 dBμV/m EMI
6 PCBAN-0971 EMI 6
PCB 9 PCBGerber
EMI10
FCC B
ADM3251E 300 MHz
PCB
AN-0971 isoPower
ADM3251E
Rev. E | Page 14 of 16
ADP3330
IN
NR
+ +
SD103C
22μF 10μF
5VOUT
SD103C
78253
VCC
VCC
VCC
GND
ISOLATIONBARRIER
SD
ERRTRANSFORMERDRIVER
VCC
GND
VISO
GNDISO
ADM3251E
0738
8-02
2
22.
ADM3251E DC-DCVCC 3.0 V 3.7 V VISO
GNDISO 3.0 V 5.5 V
LDO22 5 V
180°
ADP3330ADM3251E (VISO)
ADM3251E
Rev. E | Page 15 of 16
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FORREFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
COMPLIANT TO JEDEC STANDARDS MS-013-AC
13.00 (0.5118)12.60 (0.4961)
0.30 (0.0118)0.10 (0.0039)
2.65 (0.1043)2.35 (0.0925)
10.65 (0.4193)10.00 (0.3937)
7.60 (0.2992)7.40 (0.2913)
0.75 (0.0295)0.25 (0.0098)
⋅ 45°
1.27 (0.0500)0.40 (0.0157)
COPLANARITY0.10 0.33 (0.0130)
0.20 (0.0079)
0.51 (0.0201)0.31 (0.0122)
SEATINGPLANE
8°0°
20 11
101
1.27(0.0500)
BSC
0607
06-A
23. 20 [SOIC_W]
(RW-20)
mm (inches)
1
ADM3251EARWZ −40°C +85°C 20 [SOIC_W] RW-20 ADM3251EARWZ-REEL −40°C +85°C 20 [SOIC_W] RW-20 EVAL-ADM3251EEBZ 1 Z = RoHS
ADM3251E
Rev. E | Page 16 of 16
©2008–2010 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D07388-0-5/10(E)