13th International Conference on Defects — Recognition, Imaging and Physics in Semiconductors

September 13-17, 2009Oglebay Resort & Conference Center Wheeling, West Virginia, USA

Sponsored by

www.tms.org/meetings/specialty/drip09/home.html

D R I P X I I I Call for Papers

www.tms.org/meetings/specialty/drip09/home.html LEARN • NETWORK • ADVANCE

About the DRIP ConferenceFor more than 20 years, the DRIP conference has filled a unique niche in the physics of semiconductor defects, focusing on all aspects, including point, line, planar and volume defects studied by a variety of techniques. The last DRIP conference was held in 2007 in Berlin, Germany, presenting research and developments covering defect recognition, imaging, characterization, origin and properties, and effect on device performance and reliability. This comprehensive approach and gathering of experts allows for discussion of the multifaceted effects of growth, processing, and device fabrication and their interrelationships. As semiconduc-tor technology has matured, so have the techniques for detection, identification and imaging. Decreasing feature size, increasing wafer size and purity level, reduction of layer thickness and introduction of new materials present new challenges at every stage of semiconductor technology development. These new challenges will be the focus of DRIP XIII.

Scope of DRIP XIIIPapers are sought for both oral presentations and posters, covering the fundamental aspects of the field and technology development:

Physics of point and extended defects in elemental and compound semiconductors: origin and propertiesImaging techniques used and being developed for examining point and extended defects (proximity probe, x-ray, electron beam, and noncontact electrical, optical and thermal imaging techniques)Device imaging to evaluate performance and reliabilityEffects of defects on properties of semiconductors and interfacesEvolution of defects during device operation and their effect on device reliabilityLarge area wafer mappingIn situ defect monitoring and process controlMaterial-specific (photovoltaics, silicon, SOI, III-V, wide band gap) growth- and processing-induced defects

••

••••••

Submit your abstract by April 17 in order to present your paper at DRIP XIII!Authors wishing to present a paper at DRIP XIII must submit a 150-word abstract and an extended abstract online at ProgramMaster, http://ProgramMaster.org/DRIP09. Conference organizers receive electronic notification of all abstract submissions upon entry. Log in to ProgramMaster or click on HELP from the menu for instructions.

About the Extended AbstractAn additional one-page abstract is required to assist organizers in considering the material planned for presentation. This additional page, referred to as “extended abstract” in ProgramMaster, should be uploaded as a Microsoft Word or Portable Document Format (PDF) attachment when your initial abstract is submitted. Only the 150-word abstract will be printed in the program book distributed at the conference.

Questions about submitting your abstract? Contact TMS.Technical Support Services Department

Telephone: (724) 776-9000, ext. 256, or (800) 759-4TMSE-mail: programming@tms.org

PublicationSelect technical sessions will be published in the Journal of Electronic Materials. In addition to submitting

your abstract to DRIP, you are also encouraged to submit manuscripts of your work to the journal. Visit http://jems.edmgr.com for details on manuscript submission.

Sponsor DRIP XIII and place your company in the spotlight!Sponsors of DRIP XIII receive great benefits, from recognition in print, online and on-site to conference registration. To learn about all the benefits and sponsorship options, visit www.tms.org/meetings/specialty/drip09/sponsors.html;telephone Joe Rostan at TMS at (724) 776-9000, ext. 231, or (800) 759-4TMS; or e-mail exhibits@tms.org.

Present your research at this unique conference focusing on all aspects of semiconductor defects.

DR

IP X

III

Cal

l for

Pap

ers

NON-PROFITORGANIZATIONU.S. POSTAGE

PAIDWARRENDALE, PA

PERMIT NO. 16

DRIP XIII Organizers

Organizing CommitteeMark Dexter, Texas InstrumentsMichael Dudley, State University of New York at Stony BrookPiotr Edelman, SDIMark S. Goorsky, UCLAAndrew M. Hoff, University of South FloridaPhilip G. Neudeck, NASA GRCSteven A. Ringel, The Ohio State UniversityMarek Skowronski, Carnegie Mellon UniversityPeilin Song, IBM T.J. Watson Research CenterRobert E. Stahlbush, Naval Research LaboratoryMichio Tajima, Japan Space Exploration AgencyJens W. Tomm, Max Born Institute

Proceedings EditorsPiotr Edelman, SDIAndrew M. Hoff, University of South Florida

International Steering CommitteeJean-Pierre Fillard, Honorary Member, FranceTomoya Ogawa, Honorary Member, JapanMartina Baeumler, GermanyAnna Cavallini, ItalyPiotr Edelman, USACesare Frigeri, ItalyJuan Jimenez, SpainJean-Pierre Landesman, FranceAlan Mickelson, USAPaul Montgomary, FranceTakashi Sekiguchi, JapanMarek Skowronski, USAMichio Tajima, JapanJens W. Tomm, GermanyZhanguo Wang, ChinaJan Weyher, Poland, The NetherlandsDeren Yang, China

Contact Information

For General Inquiries

Professor Marek Skowronski, DRIP XIII ChairCarnegie Mellon University, Pittsburgh, PennsylvaniaTelephone: (412) 268-2710E-mail: mareks@cmu.edu

For Program Inquiries Professor Michael Dudley, Program Co-ChairState University of New York at Stony BrookTelephone: (631) 632-8500E-mail: mdudley@notes.cc.sunysb.edu

Dr. Robert Stahlbush, Program Co-ChairNaval Research Laboratory, Washington, D.C. Telephone: (202) 767-3357E-mail: stahlbush@nrl.navy.mil

For Meeting Inquiries

TMS Meeting ServicesWarrendale, PennsylvaniaTelephone: (724) 776-9000, ext. 243, or (800) 759-4TMS E-mail: mtgserv@tms.org