comparing si and diamond for slhc · 2009. 12. 22. · comparison with niel cross sections niel in...

Wim de Boer Karlsruhe CARAT Workshop GSI 14122009 1

Comparing Si and Diamond for SLHC

Folklore up to a few years ago

Diamond radiation hard up to 1016 ncm2

Si radiation hard up to 1014 ncm2

Diamond available soon as large single crystal wafersallowing MIP detection


Comparing Si and Diamond for SLHCFolklore in 2010

Si usable up to a few 1016 ncm2(albeit large leakage current ie needsstrong cooling)

Diamond single crystals in large quantitiesat reasonable prices still difficultand not so radiation hard(but small leakage current no cooling)


Why 10^16 needed20

0820

1020

1220

1420

1620

1820

2020

2220

2420

26

Year

0

2

4

6

8

10

12

Peak

Lum

inos

ity [1

034 c

m-2

s-1]

no PHASE II upgrade no PHASE II upgradeincluding PHASE II upgradeincluding PHASE II upgrade

RGaroby - LHCC - July 2008 - Upgrade Plans for the CERN Accelerator ComplesRGaroby - LHCC - July 2008 - Upgrade Plans for the CERN Accelerator ComplesFZimmermann - Feb 2009 - SLHC Machine Plans FZimmermann - Feb 2009 - SLHC Machine Plans

[MMoll][MMoll]

New injectors + IR upgrade phase 2

Linac4 + IR upgrade phase 1

Collimation phase 2

0 10 20 30 40 50 60r [cm]

1013

51014

51015

51016

Φeq

[cm

-2] total fluence Φeqtotal fluence Φeq

neutrons Φeq

pions Φeq

other charged

SUPER - LHC (5 years 2500 fb-1)

hadrons ΦeqATLAS SCT - barrelATLAS Pixel

Pixel () Ministrip ()Macropixel ()

(microstrip detectors)

[MMoll simplified scaled from ATLAS TDR]

From M Moll CERN RD50


8 North-American institutesCanada (Montreal) USA (BNL Fermilab New MexicoPurdue Rochester Santa Cruz Syracuse)

1 Middle East instituteIsrael (Tel Aviv)

38 European institutesBelarus (Minsk) Belgium (Louvain) Czech Republic (Prague (3x)) Finland (Helsinki Lappeenranta) Germany (Dortmund Erfurt Freiburg Hamburg Karlsruhe Munich) Italy (Bari Florence Padova Perugia Pisa Trento) Lithuania (Vilnius) Netherlands (NIKHEF) Norway (Oslo (2x)) Poland(Warsaw(2x)) Romania (Bucharest (2x)) Russia (Moscow StPetersburg) Slovenia (Ljubljana) Spain (Barcelona Valencia) Switzerland (CERN PSI) Ukraine (Kiev) United Kingdom (Glasgow Lancaster Liverpool)

RD50 Collaboration on radiation hardness

247 Members from 47 Institutes

Detailed member list httpcernchrd50


Diamond radiation hardness decreases at low energies


NIEL mainly by low energy impinging particles

Above 100 MeValmost 100ionization loss

Diamon

d

Silic

on

only 10 in ionizing losses rest mainlydisplacements from nuclear recoils ie Non-Ionizing Energy Losses (NIEL)

Lindh

ard pa

rtitio

n func

tion


Radiation damage by nuclear recoils in Si and C

Z Ions NIEL14 417 4213 910 90612 1384 124711 1021 88610 1225 8459 265 1418 493 2097 398 1316 909 2365 270 0554 383 0663 662 0672 11152 441 46107 09Total 6559 5738

10 GeV protonsZ Ion NIEL6 698 085 869 0774 584 0443 1133 0552 10625 2011 30465 024Total 44374 481

Mg Alimportantrecoils in Si

only Heimportantrecoil in C

Displacement defects calculated with SRIMCOM


Comparison with NIEL cross sections

NIEL in Silicon NIEL in Diamond

Wim de Boer Johannes Bol Alexander Furgeri Steffen Muller Christian Sander (Karlsruhe U) Eleni Berdermann Michal Pomorski Darmstadt GSI ( ) Mika Huhtinen (CERN) e-Print arXiv07050171 PhysStatus Solidi 20430092007


Hadron spectra at the LHC

Hadrons below 100 MeVnon-negligible evenat LHC


Expected Signal degradation for LHC Silicon Sensors

Note Measured partly under different conditions Lines to guide the eye (no modeling)


Observed charge after 1016 ncm2 much larger than expected

bull CCE ~7300e (~30)after ~ 1times1016cm-2 800V


Use n-in-p detectors for high fluences

Future SLHC strip detectors Present LHC strip detectors

will invert from n to pafter radiation

non-inverted under-depleted

bullLimited loss in CCE

bullLess degradation with under-depletion

inverted to ldquop-typerdquo under-depleted

bull Charge spread ndash degraded resolution

bull Charge loss ndash reduced CCE


Radiation damage introduces acceptors

P P P

hh

h

h

P P

B B B B B

h

h h

B

h

h

E

After high fluences theacceptor concentrationbecomes so high that thedetector cannot be depletedanymore and results instrong negative spacecharge ie high E-field

+


Drift of ionized cloud reveals electric field (TCT measurement)

-04

-02

0

02

04

06

08

1

12

85 90 95 100 105 110

U= -40VU= -120VU= -160VU= -200V

-04

-02

0

02

04

06

08

1

12

14

85 90 95 100 105 110

U= -260VU= -280VU= -300VU= -320VU= -340VU= -360VU= -380VU= -400V

Time in ns Time in ns

Φ = 0 Φ = 6middot1013


Electric field evolution with fluence

00E+00

20E+04

40E+04

60E+04

80E+04

10E+05

12E+05

14E+05

16E+05

18E+05

00E+00 50E-03 10E-02 15E-02 20E-02 25E-02 30E-02

Distance cm

Elec

tric

fiel

d V

cm

F=1e14F=3e14F=1E15F=3E15F=1E16

d = 300umV = 500Vg = 17e-2 cm-1

N on P silicon detector(single peak model)

V Eremin RD50 Nov 2009

Cha

rge

mul

tiplic

atio

npo

ssib

le


How does charge multiplication work

Avalanche in Silicon

holes produced by impact ionization in high fieldnear strip drift back in volume

recombine with electron and emitted

photon generates bdquoAugerldquo electrons which drift to electrodeand process repeats so charge multiplication is obtained

A large enough hole current reduces field on hit strip thus stopping avalanche

Applications of avalanche mechanism Zener diodes Si-photomultipliers hellip


Evidence for charge multiplicationEvidence for charge multiplication1) Collected charge larger than in unirradiated sensor

2)Second peak in TCT after electrons reach strip

3) TCT signal not saturated at high voltages as expectedin saturated drift region is reached

4) TCT signal delayed if holes are produced at stripreceiving electrons

5) TCT signal and leakage current BOTH increases with bias voltage6) Lorentz angle may change sign if holes are produced sufficiently stronglyEvidence for 1) by Affolder for 2-5 shown by G Kramberger and M Milovanovic (Ljubljana) at RD50 meeting CERN Nov 2009 Following plots taken from themFirst hint for 5) measured in Karlsruhe (Diplomarbeit M Schneider)


Charge collection above 100Charge collection above 100High CCE measured from different groups with silicon strip detectors at high fluences and high bias voltages (Lrsquopool Ljubljana) Device modeling using Device modeling using extrapolated parameters from low extrapolated parameters from low fluencefluence region failsregion fails completelycompletely

We need a new tool to identify electric field and multiplication effects Ideal tool for investigation of electric field and charge multiplication in silicon detectors (paticularly heavily irradiated) is Edge-TCT

The work presented in this work is submitted to IEEE-TNS

I Mandić et al RESMDD 08 Firenze 2008

full charge collection (140 microm)

StripsT Affolder et al IEEE NSS-MIC Orlando 2009

Kramberger RD50 Nov 2009


ldquoldquoEdgeEdge--TCTTCTrdquordquo

IR beam penetrates whole detector from side

Advantagesbull Position of e-h generation can be controlled by moving tablesbull the amount of injected e-h pairs can be controlled by tuning the laser powerbull easier mounting and handlingbull not only charge but also induced current is measured ndash a lot more information is obtainedDrawbacksbull Applicable only for strippixel detectors if 1060 nm laser is used (light must penetrate guard ring

region)bull Only the position perpendicular to strips can be used due to widening of the beam Beam is ldquotunedrdquo

for a particular strip bull Light injection side has to be polished to have a good focus ndash depth resolutionbull It is not possible to study charge sharing due to illumination of all strips


A second peak emerges in the induced current signals which is related to electron drift (it shifts when moving away from the strip)

It can only be explained by electrons entering very high field at the strips where they multiply The second peak is a consequence of holes drifting away from the strips

The change of 2nd peak amplitude can be used to estimate electron trapping times

pst

tyItyI

eeffeeff

p

p

p 670exp)ns162m125()ns692m175(

2

2

2 =rarr⎟⎟⎠

⎞⎜⎜⎝

⎛ ∆minusasymp

==

==τ

τmicromicro

τeffe~600 ps in good agreement with measurements of effective trapping times

From short decay of I(y=25 microm) one can conclude that τeffh is short (in 700 ps holes drift 50-60 microm At ylt100 microm the field is present)


Velocity and electric field profiles do not give consistent picture if number of drifting carriers does not increase in some parts of the detector

Prompt current method ndash velocity profile Arrival of electrons used for DPM

saturated velocity

bullLower fields at the strip side for low voltagesbullSignificant field in the detector at moderate voltages ndash Egt033 Vmicrom for 600 V bullDue to saturation of velocity the determination of the field becomes impossible but the signal still rises at small y


The peak in the initial current at y=30 microm is prolonged at higher voltages Drift of multiplied holes prolongs the signal

time [ns]0 05 1 15 2

]Ω

I[ 50

V

-05

-04

-03

-02

-01

0

[ns]p[V]tbiasV700 111650 117600 118550 115500 117450 116400 115350 115300 114250 114200 116150 123100 151

The shift of the signal is of the same order asvsatemiddottshift=30 microm the time needed for electrons to get to the strips

For detector at 5middot1014 cm-2 the shift does not exist once the drift velocity saturates


Charge collection profile and Qmip correlation with current

Expected bulk current for fully depleted detector

High bias voltage significantly improves charge collection

Leakage current and ltQgt are correlated


ltQgt vs bias Detector Micron FZ-Si p-type micro-strip Φ=5x1015 cm-2 T=-20degC

( )dyyQW

QWy

yint=

=

=0

1

forward

reverse

(1st proof that this is not a

setup artifact)


Principle of Lorentz angle measurements


Lorentz shift becomes negative in irradiated sensors

ExBE

ExBExB

Non-irradiated detectorLorentz shift to left

Irradiated detectorvoltage reduction on stripwith charge multiplication-gtLorentz shift to right possible

The hole current reduces field on hit strip which createshorizontal electric field components from neighbouring strips

In a magnetic field this can enhance chargemultiplication on one side of strip

thus pulling charge sharing to bdquowrongldquo side ie effectively a negative Lorentz shift


Observed Lorentz shifts

unirradiated

B

B

B

B

1015ncm2 1016ncm2

1015ncm2


Future

Quantization of the charge multiplication and its dependence on voltage fluence and annealing

Building a new device model

What is optimum design

Can one really operate Si detectors in charge multiplication mode

PROGRAMS TO INVESTIGATE OPTIMUM DESIGN STABILITY AND SN UNDERWAY

MANY INTERESTING RESULTS EXPECTED TO COME

Why 10^16 needed



ldquoEdge-TCTrdquo

A second peak emerges in the induced current signals which is related to electron drift (it shifts when moving away from the s

Velocity and electric field profiles do not give consistent picture if number of drifting carriers does not increase in some



Comparing Si and Diamond for SLHCFolklore in 2010

Si usable up to a few 1016 ncm2(albeit large leakage current ie needsstrong cooling)

Diamond single crystals in large quantitiesat reasonable prices still difficultand not so radiation hard(but small leakage current no cooling)


Why 10^16 needed20

0820

1020

1220

1420

1620

1820

2020

2220

2420

26

Year

0

2

4

6

8

10

12

Peak

Lum

inos

ity [1

034 c

m-2

s-1]



[MMoll][MMoll]



Collimation phase 2

0 10 20 30 40 50 60r [cm]

1013

51014

51015

51016

Φeq

[cm


neutrons Φeq

pions Φeq

other charged



















Diamon

d

Silic

on


Lindh

ard pa

rtitio

n func

tion



Z Ions NIEL14 417 4213 910 90612 1384 124711 1021 88610 1225 8459 265 1418 493 2097 398 1316 909 2365 270 0554 383 0663 662 0672 11152 441 46107 09Total 6559 5738






























P P P

hh

h

h

P P

B B B B B

h

h h

B

h

h

E


+



-04

-02

0

02

04

06

08

1

12

85 90 95 100 105 110

U= -40VU= -120VU= -160VU= -200V

-04

-02

0

02

04

06

08

1

12

14

85 90 95 100 105 110



Φ = 0 Φ = 6middot1013



00E+00

20E+04

40E+04

60E+04

80E+04

10E+05

12E+05

14E+05

16E+05

18E+05

00E+00 50E-03 10E-02 15E-02 20E-02 25E-02 30E-02

Distance cm

Elec

tric

fiel

d V

cm

F=1e14F=3e14F=1E15F=3E15F=1E16

d = 300umV = 500Vg = 17e-2 cm-1



Cha

rge

mul

tiplic

atio

npo

ssib

le

































pst

tyItyI

eeffeeff

p

p

p 670exp)ns162m125()ns692m175(

2

2

2 =rarr⎟⎟⎠

⎞⎜⎜⎝

⎛ ∆minusasymp

==

==τ

τmicromicro






saturated velocity




time [ns]0 05 1 15 2

]Ω

I[ 50

V

-05

-04

-03

-02

-01

0

[ns]p[V]tbiasV700 111650 117600 118550 115500 117450 116400 115350 115300 114250 114200 116150 123100 151










( )dyyQW

QWy

yint=

=

=0

1

forward

reverse


setup artifact)





ExBE

ExBExB








unirradiated

B

B

B

B

1015ncm2 1016ncm2

1015ncm2


Future







Why 10^16 needed



ldquoEdge-TCTrdquo





Why 10^16 needed20

0820

1020

1220

1420

1620

1820

2020

2220

2420

26

Year

0

2

4

6

8

10

12

Peak

Lum

inos

ity [1

034 c

m-2

s-1]



[MMoll][MMoll]



Collimation phase 2

0 10 20 30 40 50 60r [cm]

1013

51014

51015

51016

Φeq

[cm


neutrons Φeq

pions Φeq

other charged



















Diamon

d

Silic

on


Lindh

ard pa

rtitio

n func

tion



Z Ions NIEL14 417 4213 910 90612 1384 124711 1021 88610 1225 8459 265 1418 493 2097 398 1316 909 2365 270 0554 383 0663 662 0672 11152 441 46107 09Total 6559 5738






























P P P

hh

h

h

P P

B B B B B

h

h h

B

h

h

E


+



-04

-02

0

02

04

06

08

1

12

85 90 95 100 105 110

U= -40VU= -120VU= -160VU= -200V

-04

-02

0

02

04

06

08

1

12

14

85 90 95 100 105 110



Φ = 0 Φ = 6middot1013



00E+00

20E+04

40E+04

60E+04

80E+04

10E+05

12E+05

14E+05

16E+05

18E+05

00E+00 50E-03 10E-02 15E-02 20E-02 25E-02 30E-02

Distance cm

Elec

tric

fiel

d V

cm

F=1e14F=3e14F=1E15F=3E15F=1E16

d = 300umV = 500Vg = 17e-2 cm-1



Cha

rge

mul

tiplic

atio

npo

ssib

le

































pst

tyItyI

eeffeeff

p

p

p 670exp)ns162m125()ns692m175(

2

2

2 =rarr⎟⎟⎠

⎞⎜⎜⎝

⎛ ∆minusasymp

==

==τ

τmicromicro






saturated velocity




time [ns]0 05 1 15 2

]Ω

I[ 50

V

-05

-04

-03

-02

-01

0

[ns]p[V]tbiasV700 111650 117600 118550 115500 117450 116400 115350 115300 114250 114200 116150 123100 151










( )dyyQW

QWy

yint=

=

=0

1

forward

reverse


setup artifact)





ExBE

ExBExB








unirradiated

B

B

B

B

1015ncm2 1016ncm2

1015ncm2


Future







Why 10^16 needed



ldquoEdge-TCTrdquo
















Diamon

d

Silic

on


Lindh

ard pa

rtitio

n func

tion



Z Ions NIEL14 417 4213 910 90612 1384 124711 1021 88610 1225 8459 265 1418 493 2097 398 1316 909 2365 270 0554 383 0663 662 0672 11152 441 46107 09Total 6559 5738






























P P P

hh

h

h

P P

B B B B B

h

h h

B

h

h

E


+



-04

-02

0

02

04

06

08

1

12

85 90 95 100 105 110

U= -40VU= -120VU= -160VU= -200V

-04

-02

0

02

04

06

08

1

12

14

85 90 95 100 105 110



Φ = 0 Φ = 6middot1013



00E+00

20E+04

40E+04

60E+04

80E+04

10E+05

12E+05

14E+05

16E+05

18E+05

00E+00 50E-03 10E-02 15E-02 20E-02 25E-02 30E-02

Distance cm

Elec

tric

fiel

d V

cm

F=1e14F=3e14F=1E15F=3E15F=1E16

d = 300umV = 500Vg = 17e-2 cm-1



Cha

rge

mul

tiplic

atio

npo

ssib

le

































pst

tyItyI

eeffeeff

p

p

p 670exp)ns162m125()ns692m175(

2

2

2 =rarr⎟⎟⎠

⎞⎜⎜⎝

⎛ ∆minusasymp

==

==τ

τmicromicro






saturated velocity




time [ns]0 05 1 15 2

]Ω

I[ 50

V

-05

-04

-03

-02

-01

0

[ns]p[V]tbiasV700 111650 117600 118550 115500 117450 116400 115350 115300 114250 114200 116150 123100 151










( )dyyQW

QWy

yint=

=

=0

1

forward

reverse


setup artifact)





ExBE

ExBExB








unirradiated

B

B

B

B

1015ncm2 1016ncm2

1015ncm2


Future







Why 10^16 needed



ldquoEdge-TCTrdquo






Z Ions NIEL14 417 4213 910 90612 1384 124711 1021 88610 1225 8459 265 1418 493 2097 398 1316 909 2365 270 0554 383 0663 662 0672 11152 441 46107 09Total 6559 5738






























P P P

hh

h

h

P P

B B B B B

h

h h

B

h

h

E


+



-04

-02

0

02

04

06

08

1

12

85 90 95 100 105 110

U= -40VU= -120VU= -160VU= -200V

-04

-02

0

02

04

06

08

1

12

14

85 90 95 100 105 110



Φ = 0 Φ = 6middot1013



00E+00

20E+04

40E+04

60E+04

80E+04

10E+05

12E+05

14E+05

16E+05

18E+05

00E+00 50E-03 10E-02 15E-02 20E-02 25E-02 30E-02

Distance cm

Elec

tric

fiel

d V

cm

F=1e14F=3e14F=1E15F=3E15F=1E16

d = 300umV = 500Vg = 17e-2 cm-1



Cha

rge

mul

tiplic

atio

npo

ssib

le

































pst

tyItyI

eeffeeff

p

p

p 670exp)ns162m125()ns692m175(

2

2

2 =rarr⎟⎟⎠

⎞⎜⎜⎝

⎛ ∆minusasymp

==

==τ

τmicromicro






saturated velocity




time [ns]0 05 1 15 2

]Ω

I[ 50

V

-05

-04

-03

-02

-01

0

[ns]p[V]tbiasV700 111650 117600 118550 115500 117450 116400 115350 115300 114250 114200 116150 123100 151










( )dyyQW

QWy

yint=

=

=0

1

forward

reverse


setup artifact)





ExBE

ExBExB








unirradiated

B

B

B

B

1015ncm2 1016ncm2

1015ncm2


Future







Why 10^16 needed



ldquoEdge-TCTrdquo





























P P P

hh

h

h

P P

B B B B B

h

h h

B

h

h

E


+



-04

-02

0

02

04

06

08

1

12

85 90 95 100 105 110

U= -40VU= -120VU= -160VU= -200V

-04

-02

0

02

04

06

08

1

12

14

85 90 95 100 105 110



Φ = 0 Φ = 6middot1013



00E+00

20E+04

40E+04

60E+04

80E+04

10E+05

12E+05

14E+05

16E+05

18E+05

00E+00 50E-03 10E-02 15E-02 20E-02 25E-02 30E-02

Distance cm

Elec

tric

fiel

d V

cm

F=1e14F=3e14F=1E15F=3E15F=1E16

d = 300umV = 500Vg = 17e-2 cm-1



Cha

rge

mul

tiplic

atio

npo

ssib

le

































pst

tyItyI

eeffeeff

p

p

p 670exp)ns162m125()ns692m175(

2

2

2 =rarr⎟⎟⎠

⎞⎜⎜⎝

⎛ ∆minusasymp

==

==τ

τmicromicro






saturated velocity




time [ns]0 05 1 15 2

]Ω

I[ 50

V

-05

-04

-03

-02

-01

0

[ns]p[V]tbiasV700 111650 117600 118550 115500 117450 116400 115350 115300 114250 114200 116150 123100 151










( )dyyQW

QWy

yint=

=

=0

1

forward

reverse


setup artifact)





ExBE

ExBExB








unirradiated

B

B

B

B

1015ncm2 1016ncm2

1015ncm2


Future







Why 10^16 needed



ldquoEdge-TCTrdquo






-04

-02

0

02

04

06

08

1

12

85 90 95 100 105 110

U= -40VU= -120VU= -160VU= -200V

-04

-02

0

02

04

06

08

1

12

14

85 90 95 100 105 110



Φ = 0 Φ = 6middot1013



00E+00

20E+04

40E+04

60E+04

80E+04

10E+05

12E+05

14E+05

16E+05

18E+05

00E+00 50E-03 10E-02 15E-02 20E-02 25E-02 30E-02

Distance cm

Elec

tric

fiel

d V

cm

F=1e14F=3e14F=1E15F=3E15F=1E16

d = 300umV = 500Vg = 17e-2 cm-1



Cha

rge

mul

tiplic

atio

npo

ssib

le

































pst

tyItyI

eeffeeff

p

p

p 670exp)ns162m125()ns692m175(

2

2

2 =rarr⎟⎟⎠

⎞⎜⎜⎝

⎛ ∆minusasymp

==

==τ

τmicromicro






saturated velocity




time [ns]0 05 1 15 2

]Ω

I[ 50

V

-05

-04

-03

-02

-01

0

[ns]p[V]tbiasV700 111650 117600 118550 115500 117450 116400 115350 115300 114250 114200 116150 123100 151










( )dyyQW

QWy

yint=

=

=0

1

forward

reverse


setup artifact)





ExBE

ExBExB








unirradiated

B

B

B

B

1015ncm2 1016ncm2

1015ncm2


Future







Why 10^16 needed



ldquoEdge-TCTrdquo






00E+00

20E+04

40E+04

60E+04

80E+04

10E+05

12E+05

14E+05

16E+05

18E+05

00E+00 50E-03 10E-02 15E-02 20E-02 25E-02 30E-02

Distance cm

Elec

tric

fiel

d V

cm

F=1e14F=3e14F=1E15F=3E15F=1E16

d = 300umV = 500Vg = 17e-2 cm-1



Cha

rge

mul

tiplic

atio

npo

ssib

le

































pst

tyItyI

eeffeeff

p

p

p 670exp)ns162m125()ns692m175(

2

2

2 =rarr⎟⎟⎠

⎞⎜⎜⎝

⎛ ∆minusasymp

==

==τ

τmicromicro






saturated velocity




time [ns]0 05 1 15 2

]Ω

I[ 50

V

-05

-04

-03

-02

-01

0

[ns]p[V]tbiasV700 111650 117600 118550 115500 117450 116400 115350 115300 114250 114200 116150 123100 151










( )dyyQW

QWy

yint=

=

=0

1

forward

reverse


setup artifact)





ExBE

ExBExB








unirradiated

B

B

B

B

1015ncm2 1016ncm2

1015ncm2


Future







Why 10^16 needed



ldquoEdge-TCTrdquo




































pst

tyItyI

eeffeeff

p

p

p 670exp)ns162m125()ns692m175(

2

2

2 =rarr⎟⎟⎠

⎞⎜⎜⎝

⎛ ∆minusasymp

==

==τ

τmicromicro






saturated velocity




time [ns]0 05 1 15 2

]Ω

I[ 50

V

-05

-04

-03

-02

-01

0

[ns]p[V]tbiasV700 111650 117600 118550 115500 117450 116400 115350 115300 114250 114200 116150 123100 151










( )dyyQW

QWy

yint=

=

=0

1

forward

reverse


setup artifact)





ExBE

ExBExB








unirradiated

B

B

B

B

1015ncm2 1016ncm2

1015ncm2


Future







Why 10^16 needed



ldquoEdge-TCTrdquo







saturated velocity




time [ns]0 05 1 15 2

]Ω

I[ 50

V

-05

-04

-03

-02

-01

0

[ns]p[V]tbiasV700 111650 117600 118550 115500 117450 116400 115350 115300 114250 114200 116150 123100 151










( )dyyQW

QWy

yint=

=

=0

1

forward

reverse


setup artifact)





ExBE

ExBExB








unirradiated

B

B

B

B

1015ncm2 1016ncm2

1015ncm2


Future







Why 10^16 needed



ldquoEdge-TCTrdquo






time [ns]0 05 1 15 2

]Ω

I[ 50

V

-05

-04

-03

-02

-01

0

[ns]p[V]tbiasV700 111650 117600 118550 115500 117450 116400 115350 115300 114250 114200 116150 123100 151










( )dyyQW

QWy

yint=

=

=0

1

forward

reverse


setup artifact)





ExBE

ExBExB








unirradiated

B

B

B

B

1015ncm2 1016ncm2

1015ncm2


Future







Why 10^16 needed



ldquoEdge-TCTrdquo











( )dyyQW

QWy

yint=

=

=0

1

forward

reverse


setup artifact)





ExBE

ExBExB








unirradiated

B

B

B

B

1015ncm2 1016ncm2

1015ncm2


Future







Why 10^16 needed



ldquoEdge-TCTrdquo








ExBE

ExBExB








unirradiated

B

B

B

B

1015ncm2 1016ncm2

1015ncm2


Future







Why 10^16 needed



ldquoEdge-TCTrdquo






unirradiated

B

B

B

B

1015ncm2 1016ncm2

1015ncm2


Future







Why 10^16 needed



ldquoEdge-TCTrdquo





Future







Why 10^16 needed



ldquoEdge-TCTrdquo




comparing si and diamond for slhc · 2009. 12. 22. · comparison with niel cross sections niel in...

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