class b, ab and d rf power amplifiers in 0,40 um cmos technology
DESCRIPTION
class B, AB and D rf power amplifiers in 0,40 um cmos teChnology. Daniele Agnese MSICT – RF System On Chip 2006/’07. Summary. General idea Technology comparison (CMOS, GaAsFET ) Power amplifiers topology Class B Class AB Class D Project description Simulations/Results Conclusion. - PowerPoint PPT PresentationTRANSCRIPT
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CLASS B, AB AND D RF POWER AMPLIFIERS IN 0,40 UM CMOS TECHNOLOGY
Daniele AgneseMSICT – RF System On Chip 2006/’07
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Summary
General idea Technology comparison (CMOS,
GaAsFET) Power amplifiers topology
Class B Class AB Class D
Project description Simulations/Results Conclusion
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General idea
ADS Power amplifiers tutorial Transistor’s model Circuit adaptation Simulations change
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Technology comparison
GaAsFET 0.4 μm CMOS
Vth
-2.5 V
0.5 V
VDS - IDS
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Power amplifier - Class B
Circuit
Crossover distortion:
50% of cycle conducting
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Power amplifier - Class AB
Circuit
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Power amplifier - Class D
Circuit
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Project description
Power supply Working point (Bias ports) Transistor’s parameters Power input signal Load adaptation
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Simulations/Results
Class B – 1/2
50%
T=1/850 MHz = 1,2 ns
Linear region: Vds < Vgs - Vth
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Simulations/Results
Class B – 2/2
PAE = (Pload – Pin) / Psupply
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Simulations/Results
Class AB – 1/2
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Simulations/Results
Class AB – 2/2
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Simulations/Results
Class D – 1/2
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Simulations/Results
Class D – 2/2
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Conclusion
Improvements: Optimize transistors width Efficiency Matching network Reduce current leakage
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Any questions?
Doubts?
or comments?
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Thank you a lot for your attention!