基于团簇的多元相成分设计方法: 化学势均衡理论在非晶合金材料 … ·...
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基于团簇的多元相成分设计方法: 化学势均衡理论在非晶合金材料成分
设计中的应用
董 闯
大连理工大学三束材料改性国家重点实验室
成分敏感
多组元合金相成分设计
多组元体系
定量判据难
微观计算和模拟计算量大,且难应用于复杂体系
Phase diagram: phase vs composition
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B
A C
AuBvCw
System –subsystem relationship
AxBy
相图:宏观信息 三元以上相图信息少
Al-based QCs
Bulk metallic glasses
Hydrogen storage alloys
e/a-constant
cluster line
Ra-constant
Thin film materials
Unified equi-potential rule
• Quasicrystals are intermetallic compounds
An Al-Cu-Fe icosahedral phase grain with the football shape
Icosahedral point group
Intermetallic with specific composition Al62.5Cu24.5Fe13
Ordered solid
Electronic phase e/a=1.86
• Al-Cu-Fe-Cr for
Dong, Perrot, Dubois, Belin, Mater. Sci. Forum 1994
QC-forming systems
e/a-constant line
e/a = ΣCi*(e/a)I(e/a)Al = 3, (e/a)Cu = 1, (e/a)Fe = -2
准晶成分规律Tsai, Inoue & Masumoto, Maters Trans, JIM 1989
Kp and 2KF, atomic size, e/a factor
Rabe, Kortan, Phillips & Villars Phys. Rev. B 1991
electronegativity, radius, e/a
Grushko & Velikanova J Alloys & Comp 2004
a ternary QC is a linear extension from a binary one along an e/a-constant direction
e/a --- number of valence/conduction electron per atom均原子的价电子、导带电子数
θ Cu (+1)Al (+3)
Fe(-2)
1.62.4
0.7
0.4
0.1
-0.2
-0.5
-0.8
-1.1
-1.4
-1.7-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
Al-Cu-Fe e/a diagram
2.62.8 2.0 1.8 1.4 1.22.2
IQCIQC
Al13Fe4
e/a-constant line
Dong et al. Mater. Sci. Forum 1994The e/a-constant criterion for QCs
电子化合物稳定机制的理论基础:
费米面和布里渊区相互作用(FS-BZ效应)
FS-BZ效应导致费米能级处产生伪能隙
Al Al2CuAl7Cu2Fe
QC-AlCuFe
Dong et al. Mater. Sci. Forum 1994
•准晶及其类似相是等电子浓度相•其结构及性能必然受电子浓度调控•三元准晶与二元相有联系:形成判据?
意义
Criterion 1: e/a-constant line
Dong, Scr. Met & Mat 1995
Difficulties in using this e/a-constant criterion:
•The e/a values of QCs?•The e/a values of Transition Metals?•Correlation with binary QCs?
Cluster line criterion:
θ Cu (+1)Al (+3)
Fe(-2)
1.62.4
0.7
0.4
0.1
-0.2
-0.5
-0.8
-1.1
-1.4
-1.7-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
Al-Cu-Fe e/a diagram
2.62.8 2.0 1.8 1.4 1.22.2
cluster line
IQCIQCλ-Al13Fe4
ternary QC @Icosahedron Al10.7Fe2 – Cu /
Oct. Antiprism Al8Cu3 - Fe
Ico Al10.7Fe2
Al8Cu3
第9届准晶材料国际会议邀请报告
ΔHAl-Fe = -11 kJ/mol
ΔHAl-Cu = -1 kJ/mol
ΔHCu-Fe = +13kJ/mol
Al2Cu
•-ΔH: clustering of dissimilar atoms•Atomic size difference: close packing
•Icosahedral cluster isolated from Al13Fe4
•The cluster does exist in nearby crystalline phases!a
b
c
Al10.7Fe2 (Al84.3Fe15.7)
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10100
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Ni
Al Fe
☼
0☼
☼☼☼☼☼
CN10 A☼CN9 Al8DQC Al7DQC Al7DQC meDQC1-1☼DQC1-2☼DQC1-3☼DQC1-4☼DQC1-5☼DQC2-1DQC2-2DQC2-3DQC2-4DQC2-5ico Al100ico Al10☼tctp-Al9NAl10Ni3
Al10Fe Al10.7Fe2
Al9Ni
DQC1
e/a=2
DQC2
Al8.7Fe
e/a=1.94
composition e/a Ra
DQC Al68Cu11Co21 1.94 1.3757
DQC1 Al72.7Ni8.5Co18.8 2 1.38086
IQC Al64Cu24Fe12 1.92 1.3748
IQC Al71.4Ni21.4Fe7.2 1.99 1.3799
DQC Al75.5Pd12.0Fe12.5 2.01 1.404
IQC Al64.5Cu21.5Ru14, 1.87 1.38515
DQC1 Al70.5Ni19.4Ru10.1 1.91 1.38599
IQC Al65Cu20Mn15 1.85 1.3745
DQC Al70.5Pd16.5Mn13, 1.86 1.39965
Ra = ΣCi*RI
DQC1
DQC2
IQC
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Cu
Al F
☼
☼
Al10.7Fe2
Al8Cu3
IQC
e/a=1.92
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Ni
Al Fe
☼
0☼
☼☼☼☼☼
CN10 A☼CN9 Al8DQC Al7DQC Al7DQC meDQC1-1☼DQC1-2☼DQC1-3☼DQC1-4☼DQC1-5☼DQC2-1DQC2-2DQC2-3DQC2-4DQC2-5ico Al100ico Al10☼tctp-Al9NAl10Ni3
Al10Fe Al10.7Fe2
Al9Ni
DQC1DQC1
e/a=2
DQC2
Al8.7Fe
e/a=1.94
等电子浓度
等原子尺寸
Al71.4Ni21.4Fe7.2
Al64Cu24Fe12
致密而具有高弹性变形的Ti-Zr-Ni大块准晶 (发明专利)
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Ni
Al Zr
12
3
45
Al2NiZr6(In2Mg)AlNiZr (Cu2Mg,Fe2P)B1-AlZr6B2-AlZr9B3-Al3Zr9B4-Al3Zr15 B5-Al6Zr15 B6-Al6Ni6Zr15 B7-Al6Ni6Zr18B8-Al6Ni6Zr24C10-Al12Ni5Zr36C1-NiZr61C2-NiZr92C3-Ni3Zr93C4-Ni3Zr154C5-Ni3Zr185C6-Al12Ni3Zr186C7-Al12Ni3Zr247C8-Al12Ni3Zr308C9-Al12Ni3Zr369
Al2NiZr6 (InMg2)
三元相成分位于Al NiZr18和Ni Al3Zr9的交线上
Ni
ZrZr
Al
ZrZr
Al3Zr9
Al:Zr=1:3Ni:Zr=1:6
NiZr6Al2NiZr6
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Ni
Al Zr
12
3
45
Al2NiZr6(In2Mg)AlNiZr (Cu2Mg,Fe2P)B1-AlZr6B2-AlZr9B3-Al3Zr9B4-Al3Zr15 B5-Al6Zr15 B6-Al6Ni6Zr15 B7-Al6Ni6Zr18B8-Al6Ni6Zr24C10-Al12Ni5Zr36C1-NiZr61C2-NiZr92C3-Ni3Zr93C4-Ni3Zr154C5-Ni3Zr185C6-Al12Ni3Zr186C7-Al12Ni3Zr247C8-Al12Ni3Zr308C9-Al12Ni3Zr369
Trigonal prism Ni3Zr9~ eutectic Ni24Zr76
Trigonal prism Al3Zr9~ eutectic Al29.5Zr70.5
Trigonal prism Ni3Zr7Zr60Al20Ni20
φ4*20mm BMG
Ra-constant line
e/a=1.5 line
BMG Zr60Al20Ni20: Ni3Zr9 + Al3Zr9 ; e/a~1.5; Ra ~ Ni3Zr7
Cu-Zr-based BMGs
Cu-Zr: ΔH = -23 KJ/mol
1) Easy glass forming.2) Many phases (clusters abundant).3) Alloying with third elements leads to
high GFAs.
Zr Cu
ΔE
Tx/Tm
Activation energies for crystallization (ΔE) reach peak values at cluster compositions.
Buschow K H L. J Phys. F: Met. Phys., 1984; 14: 593
Cu9Zr4Cu5Zr8 Cu8Zr5Cu6Zr5Cu5Zr6
Cu60Zr40
Cu64Zr36
Cu50Zr50
Cu46Zr54
Cu64.5Zr35.5
special BMG compositions
Xu et al, Acta Mater. 2004
Wang et al, Appl. Phys. Lett. 2004
Inoue et al, JIM 2004
Tang et al, Chin. Phys. Lett. 2004φ2 mm (max)
glass forming range
Cu Zr
φ3mm BMG-forming zone in Zr-Al-Cu
0.0 0.2 0.4 0.6 0.8 1.0
0.0
0.2
0.4
0.6
0.8
1.0 0.0
0.2
0.4
0.6
0.8
1.0
Al
Cu
Zr
Eutectic
eutectics
GFA (Tg/Tm and ΔE) increases with increasing e/a
Cu5Zr8
Cu5Zr6
Cu6Zr5
Cu8Zr5
Cu9Zr4
Cu58.1Zr35.9Al6
0mm
15mm
φ4mmCu55Zr40Al5 Reference
cluster
Inoue et al, Mater. Sci. Eng. 1994Schumacher et al, J. Appl.Phys. 1994Inoue et al, JIM, 2002Xu et al, Phys. Rev. Lett. 2004Wang et al, Acta Mater. 2005
φ3mm BMG-forming zone in Zr-Al-Cu
0.0 0.2 0.4 0.6 0.8 1.0
0.0
0.2
0.4
0.6
0.8
1.0 0.0
0.2
0.4
0.6
0.8
1.0
Al
Cu
ZrEutectics
Cu5Zr6
Cu6Zr5
Cu8Zr5
Cu39.7Zr47.1Al13.2
Cu58.1Zr35.9Al6
Cluster
Ra ~ Cu8Zr5e/a = 1.48
Ra-constant line
Ra:average atomic radius
Ra ~ Cu5Zr6e/a = 1.5
ico-Cu8Zr5 from Cu8Zr3 phase
deep eutectic point
Cu8Zr3 phase
Δ = (R0/1-R*)/R*= 0.4%
topologically dense packing
Cu8Zr5
0.0 0.2 0.4 0.6 0.8 1.00.0
0.2
0.4
0.6
0.8
1.00.0
0.2
0.4
0.6
0.8
1.0
M
Cu
Zr
ECu61.8Zr38.2
Cu8Zr5
Cu-Zr-M 体系
M=Nb, Sn, Mo, Si, V, Ag, Al, Ti
Cu8Zr5-M
Cu64Zr36=(Cu8Zr5)1Cu1
Cu64Zr36-M
Xia et al. Appl. Phys. Lett., 2006, 88:1.
Cluster + glue atom(Cluster + glue atom) + minor alloying element
Cluster + glue atom
Proof for Cu8Zr5
Our new BMGs:
Zr-(Al, Ti)-(Ni, Co)Cu-Zr-M (Nb, Sn, Ag, Al, Ti)(Ce, Sm,Y)-Al-(Ni,Co)(Fe,Co)-based
Appl. Phys. Lett. 2006Mater Sci & Eng. R 2004 Acta Mater. 2003
1. 量化的成分设计。
2.联系微观团簇结构和宏观相图特征。
3. 连接亚组元体系和多组元体系。
成分判据特征
Some physics…
由Sanderson电负性均衡原理:
Electronegativity Equalization Principle (EEM)Upon molecule formation, the electronegativities of all the constituent atoms of a molecule become equal
R.T. Sanderson, Science, 121, 207 (1955)Quantum mechanical proof
A B AB
χA0
χB0
χBχA
+
R.G. Parr et al, J.Chem.Phys., 68, 3801 (1978)
χA= χB= χAB
由密度泛函理论,有:
∫+=++= drrVrrFrVrVrTrE HKeene )()()]([)]([)]([)]([)]([ ρρρρρρ
)()(
rVr
F�F HK +=δρδμ化学势
W. Kohn, L.J. Sham, Phys. Rev. A, 140, 1133 (1965)
),( VNEE =
基于密度泛函理论 Parr给出化学势与电负性的关系:
χρ
μ −=∂
∂=
∂∂
= VV rE
NE )
)(()(
R. G. Parr et al., J. Chem. Phys. 68, 3801(1978)
Heats of Formation of Transition-Metal Alloys
This Letter proposes a scheme for obtaining the d-electron energy-band parameters to be used in a simple analytic model of the alloy heat of formation, ΔH. The scheme employs, as an intermediate step, the equalization of the local chemical potentials of the two sites. Calculations for 3d, 4d, and 5d metal alloys yield ΔH in accord with experimental trends, but, unlike earlier estimates, with d charge transfer in the direction indicated by experiment.
R. E. Watson Phys. Rev. Lett. 43, 1130–1134 (1979)
Formation of an electric dipole at metal-semiconductor interfaces
A recent theory showed that the polarization of the chemical bonds at metal semiconductor interfaces could quantitatively account for the experimentally observed strength of Fermi level pinning on different semiconductors, without regard to the actual distribution of gap states. The method used in this theory, the electrochemical potential equalization method hitherto employed only in molecular physics, and its limitations are here discussed in detail, especially in the context of application to solid interfaces. Similarities and differences between this theory and the metal induced gap state theory are also discussed.
Raymond T. Tung Phys. Rev. B 64, 205310 (2001)
服从费米-狄拉克分布规律的理想电子气体的化学势为:
2
[1 ( ) ]12
BF
F
k TEE
πμ = − +L22
2 3( 0) (3 )2F
NT Em V
μ π= ≡ =h
T=0K时的化学势也称为费米能EF
化学势
),(2
)3( 2
322
32
2aa
a
aF RND
RN
mcE βπμ ==≈
h
iia NCN ∑= iia RCR ∑=)/( ae
2
32
),(a
aaa R
NRND = 单位:nm-2
0.0 0.2 0.4 0.6 0.8 1.00.0
0.2
0.4
0.6
0.8
1.00.0
0.2
0.4
0.6
0.8
1.0
M
Cu
Zr
ECu61.8Zr38.2
Cu8Zr5
Cu-Zr-M 体系
M=Nb, Sn, Mo, Si, V, Ag, Al, Ti
Cu8Zr5-M
Cu64Zr36=(Cu8Zr5)1Cu1
Cu64Zr36-M
Xia et al. Appl. Phys. Lett., 2006, 88:1.
Cluster + glue atom(Cluster + glue atom) + minor alloying element
Cluster + glue atom
统一判据
化学势均衡判据在双基元非晶结构中的应用
其结构可以描述为 团簇+连接原子G
两个局部结构的化学势相同!
cluster G Gxμ μ=
G cluster Gx D D=
(Cu8Zr5)1Gx BMGsCu8Zr5团簇+G
RCu8Zr5 = CCu*RCu+ CZr*RZr = 0.1403 nm,Na = CCu*NCu+ CZr*NZr = 1.385
DCu8Zr5 = = 63.1103 /nm-2== 2
32
2
32
1403.01.385
a
a
RN
cluster G Gxμ μ=
G cluster Gx D D=
(Cu8Zr5)(Cu)x BMGThe equi-potential then occurs between (Cu8Zr5) - (Cu) x
RCu8Zr5 = CCu*RCu+ CZr*RZr = = 0.1403 nm, Na = CCu*NCu+ CZr*NZr = 1.385
DCu8Zr5 = 63.1103 /nm-2
DCu = 61.035 /nm-2
x= DCu8Zr5/DCu =1.034
(Cu8Zr5)Cu1.034 ≈ Cu64.4Zr35.6Experimental Cu64Zr36 [Xu et al. Acta Mater 2004]
举例
bulk metallic glass composition chart in the Cu-Zr-G(Al,Ti,Ag) system
0.0 0.2 0.4 0.6 0.8 1.0
0.2
0.4
0.6
0.8
1.0
0.0
0.0
0.2
0.4
0.6
0.8
1.0G
Cu
Zr
cluster lines
Cu58.7Zr36.7Al4.6
Cu57.8Zr36.1Ti6.1
Cu55.8Zr34.9Ag9.3
Cu64.4Zr35.6
Cu58.7Zr36.7Al4.6
Cu57.7Zr36.1Ti6.2
Cu55.9Zr34.9Ag9.2
Calculated comp. Experimental comp.
Cu64Zr36
Cu58.1Zr35.9Al6
Cu57.2Zr35.3Ti7.5
Cu56.9Zr35.1Ag8
~
(Cu8Zr5)(CuMy)x BMGsThe equi-potential then occurs both between Cu - My
and between (Cu8Zr5) - (CuMy).
Example: (Cu8Zr5)(CuNby)x
DCu=y⋅DNb, DCu8Zr5 =x⋅DCuNby x = 0.66
(Cu8Zr5)(CuNb0.451)0.660 = Cu8.66Zr5Nb0.30 = Cu62.0Zr35.8Nb2.2
Experimental Cu62.7Zr35.3Nb2 [Xia et al. APL 2006]
举例
0.0 0.2 0.4 0.6 0.8 1.0
0.2
0.4
0.6
0.8
1.0
0.0
0.0
0.2
0.4
0.6
0.8
1.0M
Cu
Zr
cluster lines
Cu62.1Zr35.8Nb2.1
Cu62.1Zr35.8Ta2.1
Cu61.7Zr35.3Sn3
Cu64Zr36
Fig. 5 The bulk metallic glass composition chart in the Cu-Zr-G(CuM) system
Calculated comp. Experimental comp.
~Cu62.1Zr35.8Nb2.1
Cu62.1Zr35.8Ta2.1
Cu61.7Zr35.3Sn3
Cu61.9Zr36.6Nb1.5
Cu61.9Zr36.6Ta1.5
Cu61.6Zr36.6Sn1.8
New Applications in more useful alloys
1. H-storage alloy systems
a. 稀土系ΑΒ5型:Η< 1.4 wt.%b. Ti系AB型 : Η 1.2−1.8 wt.% c. Mg系A2B型 : Η 3.6−7.6 wt.% d. Zr、Ti系Laves phase AB2型 : Η 1.5−2.0 wt.%e. V系固溶体型: Η 1.5−2.4 wt.%
与Laves phase相关的一类合金体系
Ti-Cr-V alloy system
Ico-Cr7Ti6 Cluster linee/a-constant lineRa-constant line
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.51E-3
0.01
0.1
1
10
H2 P
ress
ure
(MP
a)
H / M
313K
Cr7Ti6-V线上Cr32.3Ti27.7V40合金313 K时的PCT曲线
Η/Μ: 3.22 wt. %
QuasicrystalsBulk metallic glassesLaves phase alloys
Icosahedron-based
“Icosahedron cluster alloys”
H-storage behavior
More common characteristics?
0.00 0.25 0.50 0.75 1.000.00
0.25
0.50
0.75
1.000.00
0.25
0.50
0.75
1.00
B4N
e/a=4.57 line
β-C3N4
BN4
B2CN2
BC4N BC3N
C
B
N
BC2N
BN
e/a=4 line
2. 薄膜材料:非金属体系硬质涂层材料 B-C-N system:
e/a=4.57 (Ra=0.73)
e/a=4 (Ra=0.78)
e/a-constant lineRa-constant line
国家自然科学基金一项
Thank you
王清
韩光
陈伟荣
羌建兵 王英敏
吴江李艳辉李艳辉
姜楠 陈凤
Nigel 夏俊海 高鹏
Cu-Zr晶体相中共存在23种可能的团簇结构
团簇选取准则1. 拓扑密堆准则:原子尺寸因素
R0/1=r0 / r1r0为团簇中心原子半径
r1为团簇第一壳层上原子的平均原子半径
Δ=(R0/1-R*) / R* R*为团簇配位数一定时的原子密排堆垛时的临界半径比
Δ绝对值越小说明团簇结构越满足拓扑密堆排列的要求
Miracle D B, Sanders W S. Philos. Mag., 2003.
Ico-Cu8Zr5
R0/1 = 0.906
Δ = 0.4%
R*= 0.902Cu
Zr
2. 化学短程序准则:优化的异类原子配位
RD=RD0*(1-RD
1)
RD0=(CN-x) / CN
RD1= y / E
RD值越大 团簇内部强有序+弱团簇连接 无序密堆
负混合焓 异类原子配位 团簇化
团簇之间的弱结合 同类原子连接团簇
两者的综合
RD0 = 5/12 = 0.417
RD1 = 15/30 = 0.5
RD = 0.209
Cu
Zr
Ico-Cu8Zr5
从动力学的角度来看,
靠近深共晶点的团簇结构更利于非晶形成
靠近晶体相成分的团簇:Cu14Zr4,Cu6Zr6,Cu13Zr5,Cu12Zr5
与非晶形成相关的团簇结构
将满足以上两个准则的团簇分为三类
靠近共晶点成分的团簇:Cu16Zr,Cu18Zr2,Cu8Zr5,Cu6Zr5,Cu5Zr6
介于两者之间的团簇:Cu9Zr4,Cu5Zr8
•1.5 •1.6 •1.7 •1.8 •1.9 •2.0 •2.1•0.00
•0.05
•0.10
•0.15
•0.20
•0.25
•0.30
•0.35
•e/a
•μW
C
•0.06
•0.08
•0.10
•0.12
•0.14
•0.16
•0.18
•e/a = 1.86
•diamond
•indentor
•WC indenter
•0.35%
•0.38%
•μ
β1
β4
β3
oF
β+IQC
IQC1
ω
D
电子浓度对摩擦系数的影响
Criterion 1:e/a-constant line
Cu (+1)
β
Al13Fe4
(Cu)Al4Cu9Al7Cu2FeAl10Cu9Fe
IQCIQC e/a-constante/a=1.86α
θ
ζ2
Al (+3)
Fe(-2)
1.62.4
0.7
0.4
0.1
-0.2
-0.5
-0.8
-1.1
-1.4
-1.7-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
Al-Cu-Fe e/a diagram
2.62.8 2.0 1.8 1.4 1.22.2
d-Al6Fe
Dong, Scr. Met & Mat 1995
Criterion 2:‘e/a-variant’ line
θ Cu (+1)Al (+3)
Fe(-2)
1.62.4
0.7
0.4
0.1
-0.2
-0.5
-0.8
-1.1
-1.4
-1.7-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
Al-Cu-Fe e/a diagram
2.62.8 2.0 1.8 1.4 1.22.2
e/a-variant line: binary QC, ternary QC, and the 3rd element.
‘e/a-variant’ line
IQCIQCd-Al6Fe
Al13Fe4
0.0 0.2 0.4 0.6 0.8 1.00.0
0.2
0.4
0.6
0.8
1.00.0
0.2
0.4
0.6
0.8
1.0Y
B
Fe
Fe72B22Y6
Fe12Y
Fe8B3Fe8B2Fe83B17
Fe9B
1
234
1:Fe68.6B25.7Y5.72: Fe74.9B18.8Y6.33: Fe77.6B15.9Y6.5
4: Fe83.7B9.3Y7
Δ=7.1%
Δ=8.7%
Δ=1.2%Δ=11.4%
(intersection)96Nb2Zr2
Minor adjusting
Amor.
Connection of icosahedron Al10.7Fe2 and CN10 Al8Cu3 by sharing a common rhombus, giving the basic configuration of the Mackay-type QCs.
Al
Fe
Al
Cu
Al10.7Fe2
Al8Cu3
0.0 0.2 0.4 0.6 0.8 1.0
0.0
0.2
0.4
0.6
0.8
1.0 0.0
0.2
0.4
0.6
0.8
1.0
Co12Si
Co9B3
Co9B
Co8B3
Si
B
Co
Co7B3
Δ=16%
Δ=2.6%
Δ=10.4%
Δ=-7.7%
Δ= 17.1 %
123
4
Co12Si-B与CoB-Si的交点:1: Co66.2B28.3Si5.52: Co68.6B25.7Si5.7 3: Co70.6B23.5Si5.9
4:Co83.7B9.3Si7
(intersection)96Nb4
Minor adjusting
Amor.