carbon nanotube electronics presented by: yu-jin chen mentor: professor philip collins im-sure 2007

25
Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Post on 20-Dec-2015

218 views

Category:

Documents


2 download

TRANSCRIPT

Page 1: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Carbon Nanotube Electronics

Presented By: Yu-Jin ChenMentor: Professor Philip Collins

IM-SURE 2007

Page 2: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

My Work: COMSOL model of a CNT device Tested two methods of depositing SiO2:

Electron beam evaporation (E-Beam) Plasma-enhanced chemical vapor

deposition (PECVD; BMR) Also tested etching metal dots from the

surface of a chip (with and without oxide)

Page 3: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Carbon Nanotubes

A carbon nanotube can be modeled as a hexagonal lattice (graphene) “rolled up” into a cylinder.

The nanotubes we work with are single-walled and typically 1 nm in diameter.

Page 4: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

sensitive to gases

modified for biosensing

Motivation

The Collins Group researches carbon nanotubes because there are potential applications for biosensors, sensing dangerous gases, studying proteins, etc.

Page 5: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Nanotube Devices The carbon

nanotubes are grown on silicon wafers by chemical vapor deposition (CVD).

Lithographically-deposited electrodes allow us to measure nanotube wires and transistors.

Page 6: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

CNT Devices: Typical Device Sizes

~150 um

~10 um

~1 um

Page 7: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Nanotubes with Defects

Defects can be added to a nanotube and the defects can be chemically modified.

Defects are important because they are very sensitive to changes in the environment.

Page 8: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

The Big Picture

The ultimate goal is to develop a working recipe for making oxide-covered nanotube devices that take advantage of the sites of defects.

First, we have a device with a metal dot deposited on the nanotube sidewall.

Next, we deposit oxide on this device.

Finally, we etch the metal dot, and are left with a nanotube device that has an isolated defect.

Page 9: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

COMSOL

The model consists of a silicon substrate, a silicon oxide layer, two titanium electrodes and 105 cylindrical segments that represent the nanotube.

Page 10: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

E-Beam Evaporator

This uses an electron beam to evaporate materials (silicon oxide in our case). The resulting gas then expands from the crucible and hits the sample mounted at the top of the machine.

This method is very controllable, capable of depositing a film 1 Angstrom thick.

Page 11: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

BMR PECVD

The BMR PECVD system flows gases into a chamber containing our sample. Then, a plasma is created, which causes the other gases to react, forming oxide. The oxide then sticks to the surface of the sample.

This method creates a very uniform and dense film.

Page 12: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Comparing Oxides

Initial tests showed that the BMR film was much better in quality compared to the E-Beam film.

-60x10-12

-50

-40

-30

-20

-10

Leak

age

Cur

ren

t (A

)-100x10

-3-50 0 50 100

Voltage (RE) (V)

BMR

-3x10-9

-2

-1

0

1

2

3

Leak

age

Cur

ren

t (A

)

-0.10 -0.05 0.00 0.05 0.10Voltage (RE) (V)

E-Beam Oxide

Page 13: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Nanotube Test Results

The results show that the nanotubes survive the electron beam evaporator but not the plasma CVD.

Page 14: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Metal Etch We use samples

in which gold dots have been placed on the surface so that we can test our ability to etch metal dots from under oxide.

Page 15: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Metal Etch Results

The sample on the left has oxide deposited on it. The sample on the right has been etched in aqua regia.

Page 16: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Images

Page 17: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Problems with Etching

The image on the left shows a sample before it was etched. The right image shows the sample after it was etched. In both cases, this was a bare surface with gold dots.

Page 18: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Breaking the Monolayer We discovered that

the monolayer surrounding the particles protected them from etching.

After consulting the literature and other groups, we tried exposing the samples to UV as well as different etching solutions to solve this problem. However, we have not had success.

Au

λ= 365 nm

Page 19: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Summary What we can do:

Deposition of metal dots on defects Controlled deposit of very thin oxide films Etch very large metal dots from under oxide

Future work: Adding more to the COMSOL model More tests to etch away metal nano-dots Characterizing the oxide films deposited by

e-beam evaporation

Page 20: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Special Thanks Collins Group:

Professor Phil Collins Alex Kane Bucky Khalap Brett Goldsmith John Coroneus* Danny Wan Steve Hunt Tatyana Sheps Phil Haralson

Images courtesy of the Collins Group and the INRF website.

INRF: David Crosley Vu Phan

IM-SURE: Said Shokair

The NSF and UROP

Page 21: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Questions?

Page 22: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Electronic Properties Carbon nanotubes

act as one-dimensional wires. They can be either metallic or semiconducting depending on the chirality of the tube, the “twist” of the hexagonal lattice.

Page 23: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Chirality

The chiral vector for a (2,4) nanotube (left) and an unrolled (5,0) nanotube with one unit cell highlighted in red.

Page 24: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Gate Electrode

The gate electrode is capacitively coupled to the nanotube, so it is able to increase or decrease the number of charge carriers in a semiconducting tube.

Page 25: Carbon Nanotube Electronics Presented By: Yu-Jin Chen Mentor: Professor Philip Collins IM-SURE 2007

Goals

The ultimate goal is to develop a working recipe for making oxide-covered nanotube devices that take advantage of the sites of defects.