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2002 Fairchild Semiconductor Corporation Rev. A1, November 2002

BSR58

Absolute Maximum Ratings TC=25Cunless otherwise noted

Electrical Characteristics TC=25C unless otherwise noted

Symbol Parameter Value Units

VDGO Drain-Gate Voltage 40 VVGSO Gate-Source Voltage - 40 V

IGF Forward Gate Current 50 mA

Ptot Total Power Dissipation up to Tamb=40C 250 mW

TSTG Storage Temperature Range - 55 ~ 150 C

TJ Junction Temperature 150 C

Symbol Parameter Test Condition Min. Typ. Max. Units

BVGSS Gate-Source Voltage VDS = 0V, IC = 1A 40 V

IGSS Gate Reverse Current VGS = 20V 1 nA

IDSS Zero-Gate Voltage Drain Current VDS = 15V, VGS = 0V 8 80 mA

VGS(off) Gate-Source Cut-off Voltage VDS = 15V, ID = 0.5nA 0.8 4 V

VDS(on) Drain-Source On Voltage VGS = 0V, ID = 5mA 0.4 V

rds(on) Drain-Source On Reverse VGS = 0V, ID = 0 60

Crss Reverse Transfer Capacitance VDS = 0V, VGS = 10V 5 pF

td Delay Time VDD = 10V, VGS(on) = 0V

ID = 10mA, VGS(off) = 10V

10 nS

tr Rise Time 10 nS

toff Turn-off Time 100 nS

BSR58

N-Channel Low-Frequency Low-NoiseAmplifier This device is designed for low-power chopper or switching application

sourced from process 51

SOT-23

1. Drain 2. Source 3. Gate

1

2

3

Mark: M6

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Package Dimensions

BSR58

0.96~1.14

0.12

0.03~0.10

0.38 REF

0.40 0.03

2.90 0.10

0.95 0.03 0.95 0.03

1.90 0.03 0.508REF

0.97REF

1.300.1

0

0.45~0.60

2.400.1

0

+0.05

0.023

0.20MIN

0.40 0.03

SOT-23

Dimensions in Millimeters

2002 Fairchild Semiconductor Corporation Rev. A1, November 2002

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2002 Fairchild Semiconductor Corporation Rev. I1

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