bhe low noise amplifiers · this s-band low noise amplifier is intended for use in modern solid...

BHE Bonn Hungary Electronics Ltd. Microwave & RF Development & Manufacturing

H-1044 Budapest, Ipari Park Str. 10. Hungary * H-1325 Budapest, P.O.Box 164. Hungary ( +36 1 233 2138 +36 1 233 2506 www.bhe-mw.eu [email protected]

BHE

Low Noise Amplifiers

http://www.bhe-mw.eu

mailto:[email protected]

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Non waterproof

LNA Selector

Waterproof



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Overview

Name Frequency (MHz) Gain (dB)

Noise Temp (K) Input Remark

BLWC13 25-1300 24 170 N BLVC10 136-138 40 170 N Input Helical Filter BLLC11 1400-1600 30 65 N Microstrip Filter BLSC18 2000-2300 45 40 N Microstrip Filter BLSC17 2000-2500 50 50 N Microstrip Filter BLSC12 2200-2300 45 50 N Interdigital Filter BLSC14 2200-2300 45 65 N Microstrip Filter BLSC19 2200-2900 45 100 N BLSC15 2400-2600 50 50 N Microstrip Filter BLLC13 950-2050 30 290 SMA RS485 Control BLSC16 1000-2000 32 110 SMA BLWC09 1000-6000 24 170 SMA BLLC12 1400-1600 30 65 SMA Microstrip Filter BLWCxx 2000-12000 28 170 SMA BLSC23 2000-2500 60 120 SMA Microstrip Filter BLSC26 2000-3000 30 170 SMA BLSC24 2200-2300 45 40 SMA Microstrip Filter BLSC27 2200-2300 35 120 SMA BLSC28 2200-2300 30 120 SMA High Output Power BLSC29 2200-2400 35 75 SMA BLSC25 2200-2900 45 100 SMA BLWC16 3300-12000 27 290 SMA Input Filter BLWC15 4200-4400 30 120 SMA Input/Output Isolators BLCC12 5400-5900 40 120 SMA STC Control BLCC16 5900-6420 70 120 SMA BLXC12 7900-8550 30 170 SMA BLXC10 9400-10000 23 150 SMA STC Control BLSW13 2000-2300 45 65 WG Microstrip Filter BLSW12 2200-2300 45 50 WG Interdigital Filter BLCW11 3400-4200 33 65 WG Microstrip Filter BAFS11 3400-4200 33 65 WG Microstrip Filter BLCW16 4500-4800 60 50 WG Microstrip Filter BAFX11 11700-12250 33 80 WG BLKW10 17700-19700 33 100 WG



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Table of content

Input: N Female Connector .................................................................................................... 5 1. BLWC13: 25 MHz – 1300 MHz WIDEBAND LNA ........................................................ 5 2. BLVC10: 136 MHz – 138 MHz LNA WITH INPUT BPF ............................................... 6 3. BLLC11: 1400MHz – 1600 MHz LOW NOISE AMPLIFIER ......................................... 7 4. BLSC18: 2000 MHz – 2300 MHz LNA WITH BPF ......................................................... 8 5. BLSC17: 2000 MHz – 2500 MHz LNA WITH BPF ......................................................... 9 6. BLSC12: 2200 MHz – 2300 MHz LNA WITH BPF ....................................................... 10 7. BLSC14: 2200 MHz – 2300 MHz LNA WITH BPF ....................................................... 11 8. BLSC19: 2200 MHz – 2900 MHz LOW NOISE AMPLIFIER ...................................... 12 9. BLSC15: 2400 MHz – 2600 MHz LNA WITH BPF ....................................................... 13

Input: SMA Female Connector ............................................................................................ 14 10. BLLC13: 950 MHz – 2050 MHz LNA WITH ADJUSTABLE GAIN ........................... 14 11. BLSC16: 1000 MHz – 2000 MHz LOW NOISE AMPLIFIER ...................................... 15 12. BLWC09: 1000 MHz – 6000 MHz WIDEBAND LNA .................................................. 16 13. BLLC12: 1400 MHz – 1600 MHz LOW NOISE AMPLIFIER ...................................... 17 14. BLWCxx: 2000 MHz – 12000 MHz WIDEBAND LNA ................................................ 18 15. BLSC23: 2000 MHz – 2500 MHz LNA WITH BPF ....................................................... 19 16. BLSC26: 2000 MHz – 3000 MHz LOW NOISE AMPLIFIER ...................................... 20 17. BLSC24: 2200 MHz – 2300 MHz LNA WITH BPF ....................................................... 21 18. BLSC27: 2200 MHz – 2300 MHz LOW NOISE AMPLIFIER ...................................... 22 19. BLSC28: 2200 MHz – 2300 MHz LOW NOISE AMPLIFIER ...................................... 23 20. BLSC29: 2200 MHz - 2400 MHz LOW NOISE AMPLIFIER ....................................... 24 21. BLSC25: 2200 MHz – 2900 MHz LOW NOISE AMPLIFIER ...................................... 25 22. BLWC16: 3300 MHz - 12000 MHz WIDEBAND LNA ................................................ 26 23. BLWC15: 4200 MHz - 4400 MHz LNA WITH ISOLATORS ....................................... 27 24. BLCC12: 5400 MHz - 5900 MHz LOW NOISE AMPLIFIER....................................... 28 25. BLCC16: 5900 MHz - 6420 MHz LOW NOISE AMPLIFIER....................................... 29 26. BLXC12: 7900 MHz - 8550 MHz LOW NOISE AMPLIFIER ...................................... 30 27. BLXC10: 9400 MHz – 10000 MHz LOW NOISE AMPLIFIER .................................... 31

Input: Waveguide ................................................................................................................. 32 28. BLSW13: 2000 MHz – 2300 MHz WAVEGUIDE LNA................................................ 32 29. BLSW12: 2200 MHz – 2300 MHz WAVEGUIDE LNA................................................ 33 30. BLWC11: 3400 MHz – 4200 MHz WAVEGUIDE LNA ............................................... 34 31. BAFS11: 3400 MHz – 4200 MHz WAVEGUIDE LNA ................................................. 35 32. BLCW16: 4500 MHz – 4800 MHz WAVEGUIDE LNA ............................................... 36 33. BAFX11: 11700 MHz – 12250 MHz WAVEGUIDE LNA ............................................ 37 34. BLKW10: 17700 MHz – 19700 MHz WAVEGUIDE LNA ........................................... 38



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Input: N Female Connector

1. BLWC13: 25 MHz – 1300 MHz WIDEBAND LNA

• WIDE BAND • SMALL SIZE • LOW NOISE

This low noise amplifier is intended for use in modern solid state communication

equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in terrestrial applications. Electrical characteristics: Frequency Band 25 MHz to 1300 MHz RF Gain 24 dB Gain Flatness ± 1 dB typ. ± 2 dB max. Input Noise Temperature (Noise Figure) < 2 dB typ. 3 dB max. 1 dB Compression + 10 dBm I/O Impedance 50 ohms RF Connectors N – female Supply Voltage + 8…+15 V / 90 mA DC Operating Temperature Range 0 …+ 60 °C (optional: - 30 …+ 70 °C) Dimension: 71 x 33 x 22,5 (mm)

Specifications are subject to change without notice. Outline dimensions (mm):



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2. BLVC10: 136 MHz – 138 MHz LNA WITH INPUT BPF

• LOW NOISE • HELICAL INPUT FILTER • HIGH REJECTION

This low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in terrestrial applications.

Electrical characteristics: Supply Voltage / Current +12...+24 V / 400 mA Frequency Range 136 – 138 MHz Gain 40 dB Gain Flatness ± 0,5 dB I/O VSWR 1,3:1 max. Noise Figure 2 dB max. 1 dB Compression Point + 5 dBm min. Out of Band Rejections 35 dB min @ 110 MHz Out of Band Rejections 35 dB min @ 148 - 150 MHz Thermal Test 0°C …. +55°C Casing Weather Proof Size 130 x 50 x 50 mm max.





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3. BLLC11: 1400MHz – 1600 MHz LOW NOISE AMPLIFIER

• LOW NOISE • HIGH GAIN • WEATHER-PROOF HOUSING

This low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial communications. The LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability.

Electrical characteristics: Frequency Band 1.4 to 1.6 GHz RF Gain 30 dB Gain Flatness ± 0.5 dB Gain Stability + 0.5 dB Noise Temperature 65K I/O VSWR 1,5:1 1 dB Compression + 10 dBm I/O Impedance 50 ohms Supply Voltage + 24V DC (SMA) RF Connectors N - female Operating Temperature Range 0 …+ 60 °C Mechanical Dimensions 55 x 67 x 26 mm





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4. BLSC18: 2000 MHz – 2300 MHz LNA WITH BPF

• VERY LOW NOISE • HIGH RELIABILITY • BUILT IN BAND PASS FILTER • WEATHER-PROOF HOUSING

This S-band low noise amplifier is intended for use in modern solid state

communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial telecommunication systems. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions. Electrical characteristics: Frequency Band * 2.0 to 2.3 GHz RF Gain 45 dB Gain Flatness ± 0.5 dB Gain Stability ± 0.5 dB/day max Input Noise Temperature (Noise Figure) 40 °K I/O VSWR < 1.5 1 dB Compression + 10 dBm I/O Impedance 50 ohms Supply Voltage + 11 …+ 24 V DC RF Connectors N - female Humidity water proof Operating Temperature Range 0 …+ 60 °C (optional: - 30 …+ 70 °C)

(*) Other frequency range can be specified Specifications are subject to change without notice.

Outline dimensions (mm):




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communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial telecommunication systems. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions. Electrical characteristics: Frequency Band 2.0 to 2.5 GHz RF Gain 50 dB Gain Flatness +/- 0.5 dB Gain Stability +/- 0.5 dB Input Noise Temperature (Noise Figure) 50 K I/O VSWR 2 : 1 1 dB Compression + 10 dBm min. I/O Impedance 50 ohm Supply Voltage + 11 …+ 24 V DC RF Connectors N – female Humidity waterproof Operating Temperature Range 0 …+ 55 °C Specifications are subject to change without notice. Outline dimensions (mm):




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• LOW NOISE • HIGH SELECTIVITY (BUILT IN BAND PASS FILTER) • WEATHER-PROOF HOUSING

This S-band low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range, and steep skirt characteristics are important factors. Typical applications are in satellite or terrestrial applications. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions. Electrical characteristics: Frequency Band 2.2 to 2.3 GHz min. RF Gain 45 dB Gain Flatness ± 0.5 dB Gain Stability ± 0.5 dB/day max Input Noise Temperature (Noise Figure) 50 K I/O VSWR 1.5 : 1 max. 1 dB Compression Point + 10 dBm min. Output third Intercept Point + 20 dBm min. Out of Band Attenuation @ 100 MHz away - 40 dB min. I/O Impedance 50 ohms RF Connectors N - female Supply Voltage + 12 …+ 28 V DC / 150 mA Operating Temperature Range -10 …+ 60 °C





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• LOW NOISE • BUILT IN BAND PASS FILTER • WEATHER-PROOF HOUSING

This S-band low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial telecommunication systems. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions. Electrical characteristics: Frequency Band * 2.2 to 2.3 GHz RF Gain 45 dB Gain Flatness ± 0.5 dB Gain Stability ± 0.5 dB/day max Input Noise Temperature (Noise Figure) < 65 °K (< 0.87 dB) typ. < 50 °K I/O VSWR < 1.5 1 dB Compression + 10 dBm I/O Impedance 50 ohms Supply Voltage + 11 …+ 24 V DC RF Connectors N - female Humidity water proof Operating Temperature Range 0 …+ 60 °C (optional: - 30 …+ 70 °C)






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8. BLSC19: 2200 MHz – 2900 MHz LOW NOISE AMPLIFIER



communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial telecommunication systems. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions. Electrical characteristics: Frequency Band * 2.2 to 2.9 GHz RF Gain 45 dB Gain Flatness ± 0.5 dB Input Noise Temperature (Noise Figure) 100 K I/O VSWR 1.35 : 1 1 dB Compression min. + 5 dBm I/O Impedance 50 ohms Supply Voltage + 11 …+ 24 V DC RF Connectors N - female Humidity water proof Operating Temperature Range 0 …+ 60 °C (optional: - 30 …+ 70 °C)






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communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial telecommunication systems. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions. Electrical characteristics: Frequency Band * 2.4 to 2.6 GHz RF Gain 50 dB Gain Flatness +/- 0.5 dB Gain Stability +/- 0.5 dB Input Noise Temperature (Noise Figure) 50 K I/O VSWR 1.5 : 1 1 dB Compression + 10 dBm min. I/O Impedance 50 ohm Supply Voltage + 11 …+ 24 V DC RF Connectors N – female Humidity waterproof Operating Temperature Range 0 …+ 60 °C






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Input: SMA Female Connector 10. BLLC13: 950 MHz – 2050 MHz LNA WITH ADJUSTABLE GAIN

• CONTROLLABLE GAIN • COMPACT SIZE


equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in terrestrial applications. Electrical characteristics: Frequency Range 950 – 2050 MHz Gain 30 dB Gain Flatness ± 1 dB Noise Figure * 3 dB I/O VSWR 2:1 1 dB Compression * +20 dBm Adjustable Gain Range 30 dB Adjustable Gain Step 1 dB Adjustable Gain Control RS 485 Power Supply +12…+15V / 200mA Impedance 50 ohm RF Connectors SMA Female Control and power supply connector DSUB9 Male Operation Temperature 0°C…+50°C Mechanical Dimensions Approx: 78 x 48 x 25 mm (without connectors) * The values specified in the region of max gain Specifications are subject to change without notice. Outline dimensions (mm):



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• LOW NOISE • SMALL SIZE • LIGHT WEIGHT

This wide-band low noise amplifier is intended for use in modern solid state communication and instrumentation equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial telecommunication systems. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Electrical characteristics: Frequency Band * 1.0 to 2.0 GHz RF Gain 32 dB Gain Flatness ± 1 dB Gain Stability ± 0.5 dB/day max Input Noise Figure < 1.4 dB I/O Return Loss 10 dB 1 dB Compression + 10 dBm I/O Impedance 50 ohms Supply Voltage + 12 to 15 V DC RF Connectors SMA - female Operating Temperature Range 0 …+ 60 °C (optional: - 30 …+ 70 °C)


Input: SMA Female Connector



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12. BLWC09: 1000 MHz – 6000 MHz WIDEBAND LNA

• WIDE BAND • SMALL SIZE • LOW NOISE • LIGHT WEIGHT

This wide band low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in terrestrial applications.

Electrical characteristics: Frequency Band 1.0 to 6.0 GHz RF Gain 24 dB Gain Flatness ± 1 dB typ. ± 2 dB max. Input Noise Temperature (Noise Figure) < 2 dB typ. 3 dB max. 1 dB Compression + 10 dBm I/O Impedance 50 ohms RF Connectors SMA – female Supply Voltage + 15 V / 60 mA DC typ. Operating Temperature Range 0 …+ 60 °C (optional: - 30 …+ 70 °C) Dimension: 51 x 30 x 12 (mm)





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13. BLLC12: 1400 MHz – 1600 MHz LOW NOISE AMPLIFIER

• LOW NOISE • COMPACT SIZE

This low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in terrestrial applications. Electrical characteristics:

Frequency Range 1400 – 1600 MHz Gain Min. 30 dB Noise Temperature 65 K Input Reflection < -18 dB Output Reflection < -18 dB 1 dB Gain Compression min. +10 dBm Supply Voltage +12…24 V Operation Temperature Range 0…+50°C





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14. BLWCxx: 2000 MHz – 12000 MHz WIDEBAND LNA

• SMALL SIZE • EXTREME WIDE BAND • LIGHT WEIGHT


equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in terrestrial applications. Electrical characteristics:

Frequency Band 2 – 12 GHz RF Gain 28 dB min. Gain Flatness ± 1 dB typ, ± 2 dB max. Gain Stability ± 0,5 dB / day max. Noise Figure 2 dB typ. Input VSWR 3:1 typ. Output VSWR 3:1 typ. 1dB Compression +13dBm typ., +12dBm min. Power Supply +8V…+12V DC, 130 mA max. RF Connectors SMA Female Operating Temperature Range -20°C … +60°C





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communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial telecommunication systems. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions.

Electrical characteristics: Frequency Band * 2.0 to 2.5 GHz RF Gain 60 dB Gain Flatness +/- 0.5 dB Gain Stability +/- 0.5 dB Input Noise Temperature (Noise Figure) 1.5 dB I/O VSWR 1.35 : 1 1 dB Compression + 5 dBm min. I/O Impedance 50 ohm Supply Voltage + 11 … + 24 V DC RF Connectors SMA – female Humidity waterproof Operating Temperature Range - 10 to +60 °C






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• VERY LOW NOISE • HIGH RELIABILITY • WIDE BAND

This S-band low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial telecommunication systems. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions. Electrical characteristics: Frequency Band * 2.0 to 3.0 GHz RF Gain 30 dB Gain Flatness +/- 0.5 dB Gain Stability +/- 0.5 dB Input Noise Temperature (Noise Figure) 2 dB max I/O VSWR 1.5 : 1 1 dB Compression + 10 dBm min. I/O Impedance 50 ohm Supply Voltage + 12 …+ 18 V DC RF Connectors SMA - female Operating Temperature Range - 10 to +50 °C






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This S-band low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial telecommunication systems. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions.

Electrical characteristics:

Frequency Band * 2.2 to 2.3 GHz RF Gain 45 dB Gain Flatness ± 0.5 dB Gain Stability ± 0.5 dB/day max Input Noise Temperature (Noise Figure) 40 °K Input Reflection < - 18 dB Output Reflection < - 18 dB 1 dB Compression + 5 dBm I/O Impedance 50 ohms Supply Voltage + 11 …+ 24 V DC RF Connectors SMA-f Humidity water proof Operating Temperature Range 0 …+ 60 °C (optional: - 30 …+ 70 °C)






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• VERY LOW NOISE • HIGH RELIABILITY • WEATHER-PROOF HOUSING

This S-band low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial telecommunication systems. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions. Electrical characteristics: Frequency Band * 2.2 to 2.3 GHz RF Gain 35 dB Gain Flatness +/- 1 dB Gain Stability +/- 0.5 dB Input Noise Temperature (Noise Figure) 1.5 dB I/O VSWR 1.5 : 1 1 dB Compression + 10 dBm I/O Impedance 50 ohm Supply Voltage + 18 … + 24 V DC RF Connectors N or SMA – female Humidity waterproof Operating Temperature Range 0 to +50°C






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• SMALL SIZE • LOW NOISE • HIGH OUTPUT POWER


Frequency Range 2200 – 2300 MHz Gain min. 30 dB Gain Flatness ± 0,5 dB Noise Figure max. 1,5 dB 1 dB Gain Compression min. +30 dBm 3rd Order IP +40 dBm I/O VSWR max. 1,5:1 Supply Voltage +15 V DC Operation Temperature 0°C…+50°C





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20. BLSC29: 2200 MHz - 2400 MHz LOW NOISE AMPLIFIER

• VERY LOW NOISE • HIGH RELIABILITY

This S-band low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial telecommunication systems. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions. Electrical characteristics: Frequency Band * 2.2 to 2.4 GHz RF Gain 35 dB Gain Flatness +/- 1 dB Gain Stability +/- 0.5 dB Input Noise Temperature (Noise Figure) 1 dB max. I/O VSWR 1.3 : 1 1 dB Compression + 16 dBm I/O Impedance 50 ohm Supply Voltage + 18 … + 24 V DC RF Connectors SMA – female Humidity waterproof Operating Temperature Range - 40 … +85°C






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• VERY LOW NOISE • HIGH RELIABILITY • WEATHER-PROOF HOUSING


communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial telecommunication systems. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions.

Electrical characteristics: Frequency Band * 2.2 to 2.9 GHz RF Gain 45 dB Gain Flatness +/- 0.5 dB Gain Stability +/- 0.5 dB Input Noise Temperature (Noise Figure) 100 K I/O VSWR 1.25 : 1 1 dB Compression + 5 dBm min. I/O Impedance 50 ohm Supply Voltage + 12 … + 18 V DC RF Connectors SMA – female Humidity waterproof Operating Temperature Range 0 to +50 °C






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22. BLWC16: 3300 MHz - 12000 MHz WIDEBAND LNA • SMALL SIZE • EXTREME WIDE BAND • BUILT-IN INPUT HIGH PASS FILTER


Frequency Band 3,3 GHz – 12 GHz RF Gain 27 dB min. Gain Flatness ± 1 dB typ, ± 2 dB max. Gain Stability ± 0,5 dB / day max. Rejection Band 0 – 2,7 GHz Attenuation 40 dB typ, 30 dB min. Noise Figure 3 dB typ., 4 dB max. Input VSWR 2:1 typ., 3:1 max. Output VSWR 2:1 typ., 3:1 max. 1dB Compression +13dBm typ., +12dBm min. Power Supply +8V…+12V DC, 130 mA max. RF Connectors SMA Female Operating Temperature Range -20°C … +60°C





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23. BLWC15: 4200 MHz - 4400 MHz LNA WITH ISOLATORS

• SMALL SIZE • LOW NOISE • ISOLATOR ON BOTH PORT

This low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in terrestrial applications. Electrical characteristics: Frequency Band 4200 MHz to 4400 MHz RF Gain 30 dB Gain Flatness ± 1 dB typ. ± 2 dB max. Input Noise Temperature (Noise Figure) 1.5 dB typ., 2 dB max. 1 dB Compression + 10 dBm I/O Impedance 50 ohms RF Connectors SMA female Supply Voltage + 5 V / 51mA Operating Temperature Range 0 …+ 60 °C (optional: - 40 …+ 70 °C) Dimension: 67 x 23 x 12,5 (mm)





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24. BLCC12: 5400 MHz - 5900 MHz LOW NOISE AMPLIFIER

• LOW NOISE • HIGH GAIN • WEATHER-PROOF HOUSING

This C-band low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial communications. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Electrical characteristics: Frequency Band 5.4 to 5.9 GHz min. 5.0 to 6.0 GHz typ. RF Gain 40 dB min. Gain Flatness ± 0.5 dB Input Noise Figure < 1.2 dB, 1.0 dB typ. I/O VSWR < 2:1, 1.5:1 typ. 1 dB Compression + 10 dBm I/O Impedance 50 ohms Supply Voltage + 15V DC RF Connectors SMA - female Operating Temperature Range 0 …+ 60 °C (optional: - 30 …+ 70 °C) Mechanical Dimensions 74 x 34 x 24 mm





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25. BLCC16: 5900 MHz - 6420 MHz LOW NOISE AMPLIFIER

• LOW NOISE • HIGH GAIN • COMPACT SIZE



Frequency Range 5900 – 6420 MHz Gain min. 70 dB Gain Flatness ± 0,5 dB Noise Figure max. 1,5 dB 1 dB Gain Compression min. +10 dBm I/O VSWR 1,3:1 Supply Voltage +12…+18 V/180mA Operation Temperature 0°C…+60°C





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26. BLXC12: 7900 MHz - 8550 MHz LOW NOISE AMPLIFIER

• SMALL SIZE • LOW NOISE

This low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in terrestrial applications.

Electrical characteristics: Frequency Band 7900 MHz to 8550 MHz RF Gain 30 dB Gain Flatness ± 0.5 dB max. Input Noise Temperature (Noise Figure) 2 dB max. I/P and O/P VSWR 1.5 : 1 1 dB Compression + 10 dBm I/O Impedance 50 ohms RF Connectors SMA female Supply Voltage + 12 V… +18 V Operating Temperature Range - 10°C …+ 60°C Dimension: 53 x 33 x 19 (mm)





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27. BLXC10: 9400 MHz – 10000 MHz LOW NOISE AMPLIFIER

• LOW NOISE • STC FUNCTION • COMPACT SIZE


Frequency Range 9400 – 10000 MHz Gain 23 dB Gain Flatness ± 1 dB Noise Figure max. 1,8 dB 1 dB Gain Compression min. +8 dBm I/O VSWR 1,5:1 STC Attenuation 30 dB Pin max +14dBm Supply Voltage +12…+18 V/200mA Operation Temperature 0°C…+60°C





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Input: Waveguide

28. BLSW13: 2000 MHz – 2300 MHz WAVEGUIDE LNA

• LOW NOISE • BUILT IN BAND PASS FILTER • WEATHER-PROOF HOUSING

This S-band low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range are important factors. Typical applications are in satellite or terrestrial telecommunication systems. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions.


Frequency Band 2.0 to 2.3 GHz min. RF Gain 45 dB Gain Flatness ± 0.5 dB Gain Stability ± 0.5 dB / day max Input Noise Temperature (Noise Figure) < 65 °K (< 0.87 dB) typ. < 50 °K I/O VSWR < 1.5 1 dB Compression + 10 dBm I/O Impedance 50 ohms Supply Voltage + 11 … + 24 V DC RF Connectors Waveguide Input / N-female Output Housing water proof Operating temperature range 0 …+ 60 °C (optional: - 30 …+ 70 °C)




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29. BLSW12: 2200 MHz – 2300 MHz WAVEGUIDE LNA

• LOW NOISE • HIGH SELECTIVITY (BUILT IN BAND PASS FILTER) • WEATHER-PROOF HOUSING

This S-band low noise amplifier is intended for use in modern solid state communication equipment, where high reliability microwave signal amplification, high dynamic range, and steep skirt characteristics are important factors. Typical applications are in satellite or terrestrial applications. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions.


Frequency Band 2.2 to 2.3 GHz min. RF Gain 45 dB Gain Flatness ± 0.5 dB Gain Stability ± 0.5 dB / day max Input Noise Temperature (Noise Figure) 50 K I/O VSWR 1.5 : 1 1 dB Compression Point + 10 dBm min. Output third Intercept Point + 20 dBm min. Out of Band Attenuation @ 100 MHz away - 40 dB min. I/O Impedance 50 ohms RF Connectors Waveguide Input / N-female Output Supply Voltage + 12 … + 28 V DC / 150 mA Operating temperature range -10 °C …+ 60 °C


Input: Waveguide



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30. BLWC11: 3400 MHz – 4200 MHz WAVEGUIDE LNA

• SMALL SIZE • WEATHER-PROOF HOUSING • LOW NOISE


Frequency Band 3400-4200 MHz RF Gain 33 dB Gain Flatness ± 0,5 dB Gain Stability ± 0,5 dB / day max. Input Noise Temperature 65K max. Input VSWR 1,5:1 Output VSWR 1,5:1 1dB Compression +10dBm Power Supply +11…+24V DC, 200 mA max. RF Connectors Waveguide Input (CPR229G) / N-female Output Housing Waterproof Operating Temperature Range -30°C … +70°C


Input: Waveguide



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31. BAFS11: 3400 MHz – 4200 MHz WAVEGUIDE LNA

• LOW NOISE • HIGH CROSS ATTENUATION • DUAL POLARISATION • LOW POWER CONSUMPTION • HIGH RELIABILITY

This S-band dual channel low noise amplifier is intended for use in modern solid state

communication equipment, where high reliability microwave signal amplification, high dynamic range is required. Typical applications are in satellite or terrestrial applications. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability, integrated together with a high quality circularry polarized feed. Due to the weatherproof sealing, it can be used effectively in harsh environmental conditions. Electrical characteristics: Frequency Range 3.4 to 4.2 GHz Cross Polarization Attenuation 20 dB Gain 33 dB Gain Flatness + 1 dB I/O VSWR < 2 : 1 I/O Impedance 50 ohms 1 dB Compresion min. 10 dBm Input Noise Temperature (Noise Figure) 65 K max. Outputs LHCP & RHCP Output Connectors N - female Supply Voltage from +8 to 24V DC / 70mA (via output connectors) Operating Temperature Range - 30 to + 70 °C


Input: Waveguide



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32. BLCW16: 4500 MHz – 4800 MHz WAVEGUIDE LNA

• SMALL SIZE • LOW NOISE • WEATHER-PROOF HOUSING


Frequency Band 4500-4800 MHz RF Gain 60 dB Gain Flatness ± 0,5 dB Gain Stability ± 0,5 dB / day max. Input Noise Temperature typ 45K, max. 55K Input VSWR typ 1,25 : 1, max 1,35 : 1 Output VSWR 1,25 : 1 1dB Compression +14 dBm Power Supply +12…+24V DC, 300 mA max. (SMA Female) RF Connectors Waveguide Input (CPR229G) / N-female Output Housing Waterproof Operating Temperature Range -30°C … +60°C


Input: Waveguide



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33. BAFX11: 11700 MHz – 12250 MHz WAVEGUIDE LNA

• LOW NOISE • HIGH CROSS ATTENUATION • DUAL POLARISATION • LOW POWER CONSUMPTION • HIGH RELIABILITY

This X-band dual channel low noise amplifier is intended for use in modern solid state

communication equipment, where high reliability microwave signal amplification, high dynamic range is required. Typical applications are in satellite or terrestrial applications. This microwave LNA is constructed using Gallium Arsenide HEMT amplifier stages of high reliability, integrated together with a high quality feed. Due to the weather-proof sealing, it can be used effectively in harsh environmental conditions. Electrical characteristics: Frequency Range 11.7 to 12.25 GHz Cross Polarization Attenuation 30 dB Gain 33 dB Gain Flatness + 1 dB I/O VSWR < 2 : 1 I/O Impedance 50 ohms 1 dB Compression min. 18 dBm Input Noise Temperature (Noise Figure) 80 K max. Outputs E & H Output Connectors N - female Supply Voltage from +8 to 24V DC / 100 mA (via output connectors) Operating Temperature Range - 30 to + 70 °C


Input: Waveguide



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34. BLKW10: 17700 MHz – 19700 MHz WAVEGUIDE LNA

• SMALL SIZE • LOW NOISE • LOW POWER CONSUMPTION • HIGH RELIABILITY



Frequency Band 17700-19700 MHz RF Gain 33 dB Gain Flatness ± 0.8 dB Gain Stability ± 0.5 dB / day max. Input Noise Temperature typ 100K, max. 150K Input VSWR typ 1.8:1, max 2: 1 Output VSWR max. 1.6 : 1 1dB Compression +14 dBm typ. Power Supply +6…+12V DC, 85 mA max. (Soldered plug) RF Connectors Waveguide Input (WR42) / SMA female Output Housing Waterproof Operating Temperature Range -30°C … +60°C


Input: Waveguide



bhe low noise amplifiers · this s-band low noise amplifier is intended for use in modern solid...

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