automotive pcb si and pi analysis - tie.ro · cst –computer simulation technology | transient...
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![Page 1: Automotive PCB SI and PI analysis - tie.ro · CST –COMPUTER SIMULATION TECHNOLOGY | Transient Simulation Schematic Maximum voltage overshoot: Before: 1.8961V After: 1.8906V Number](https://reader034.vdocuments.site/reader034/viewer/2022052420/5acdba937f8b9a73128e5b84/html5/thumbnails/1.jpg)
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Automotive PCBSI and PI analysis
![Page 2: Automotive PCB SI and PI analysis - tie.ro · CST –COMPUTER SIMULATION TECHNOLOGY | Transient Simulation Schematic Maximum voltage overshoot: Before: 1.8961V After: 1.8906V Number](https://reader034.vdocuments.site/reader034/viewer/2022052420/5acdba937f8b9a73128e5b84/html5/thumbnails/2.jpg)
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SI – PI Analysis
Signal Integrity
•S-Parameter
•Timing analysis
•Eye diagram
Power Integrity
•Loop / Partial inductance
•DC IR-Drop
•AC PDN Impedance
•Power Aware SI
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Signal Integrity
Memory Controller
Memory Module
DQ or Add Bus
R
VTT
8 bits DDR2 lines IBIS model for the driver
(controller) and the receiver (DRAM)
Using 2DTL Method
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SI-TD Analysis — Timing Analysis
e.g. DQ1
400ps delay driver receiver
Receiver results for “typical” IBIS Model
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Buffers characteristic are process, voltage, and temp dependent.
“fast”: high voltage and
low temp
“slow”: low voltage and
high temp
Timing Analysis for Different IBIS Model
Recommended to simulate both“slow” and “fast” (envelope)
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Timing Analysis – Eye diagram
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SI-FD
Deliver the transfer function spectrum(s-parameter) of the DQ lines
[S(NxM)]N
... M...
![Page 8: Automotive PCB SI and PI analysis - tie.ro · CST –COMPUTER SIMULATION TECHNOLOGY | Transient Simulation Schematic Maximum voltage overshoot: Before: 1.8961V After: 1.8906V Number](https://reader034.vdocuments.site/reader034/viewer/2022052420/5acdba937f8b9a73128e5b84/html5/thumbnails/8.jpg)
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Quick eye diagram generation with high bit rates, z.B. PRBS with N=7
Post Processing
70ps skew betweenthe data lines
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Create Simulation Projects
Net Selection Termination Results 2D / 3D
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Exchange Layout
![Page 11: Automotive PCB SI and PI analysis - tie.ro · CST –COMPUTER SIMULATION TECHNOLOGY | Transient Simulation Schematic Maximum voltage overshoot: Before: 1.8961V After: 1.8906V Number](https://reader034.vdocuments.site/reader034/viewer/2022052420/5acdba937f8b9a73128e5b84/html5/thumbnails/11.jpg)
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Power Integrity
DC analysis: IR-drop
PDN Impedance
Time domain simulation
VRM PDN Die
AC noise Margin
IR-drop margin
TotalNoise
Bulkcaps
VRMMBcaps
Activedevice
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IR-Drop Simulation19 CPU pins, 16 Mem I pins & 16 Mem II pins
@ 20mA1.8V
Component Voltage (V)VDD Drop
(V)GND Drop
(V)DC
Resistance
Memory controller
Group1.78849 10.507m 1.007m 575mOhm
Memory Module I Group
1.7889 10m 0.969m 498mOhm
Memory Module II
Group1.789 9.409m 0.929m 469mOhm
JEDEC 79-2F
Mem.Ctrl
II I
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Power Delivery Network (PDN) Impedance
PCB inductance and via inductance contribute at higher frequency Increasing the impedance between
source and load
Mounting inductance Active device
Via inductancePlane inductance
VRM
Bulkcaps MB
caps
Activedevice
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Vias Characterization
Partial Inductance of Via
1
2ln08.5
d
hhL [pH] and mils
Via Loop Inductance
P G
s
1 2
341244332211 22 MMLLLLLloop
1 2
3
4
M12M34
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Simulation Setup
ZL
Im
40mils
Via barrelØ 8mils
Via pad Ø 12mils
TransitionLength 10mils
6mils
37mils
0.60.77
0.931.1
1.25
0
0.5
1
1.5
10mils 20mils 30mils 40mils 50mils
Inductance @ 1GHz in nH
Inductance is influenced by the loop area
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Plane Partial Inductance
All the power pins are grouptogether
1
2
N-1
N
1
PEEC Method
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Spatial PDN Impedance Plot
Impedance plot on P1V8 planeseen from memory controller
@2.6GHz
Impedance plot on P1V8 planeseen from memory module I
Impedance plot on P1V8 planeseen from memory module II
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220pF
Decap Placement
Decaps shifts the high impedanceat its placement area
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SSO Analysis for 2 DQ lines
VRM
2 I/O Buffer:Driver
2 I/O Buffer:Input
DDR2-400 I/O Buffer IBIS PRBS N=7
11010101101…
Number Mesh 15M cells
Memory Usage 6 GByte
Simulation Time2xT10: 45 h 31mKepler40: 32 h
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Transient Response
No DecapsWith Decaps
Power Supply VDD
DC Drop duringwrite mode
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Over designing the PCB Additional BOM cost
slightly or without performance improvement
Decap Analysis Tool
Define the target impedance
Define the list of parts for optimization
Start the optimization
Multiple goals: Optimizing the BOM cost Optimizing the PDN impedance
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Decap Analysis Tool Optimization (Step 1)
Target Impedance
Part lib. of currentDecaps mounted on PCB
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Decap Analysis Tool Optimization (Step 2)
Removing the decapsfrom PCB (Bare board)
![Page 24: Automotive PCB SI and PI analysis - tie.ro · CST –COMPUTER SIMULATION TECHNOLOGY | Transient Simulation Schematic Maximum voltage overshoot: Before: 1.8961V After: 1.8906V Number](https://reader034.vdocuments.site/reader034/viewer/2022052420/5acdba937f8b9a73128e5b84/html5/thumbnails/24.jpg)
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Decap Analysis Tool - ResultsLocate the marker to impedance curve manually andoptimizing the impedance
Initial config. with 23 decaps
Impedance curvewith 10 decaps
Before: 76¢After : 52¢
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Decap Analysis Tool – Results (II)Run the automatic impedance optimization
Impedance curveafter optimization
Before: 76¢After : 33¢
![Page 26: Automotive PCB SI and PI analysis - tie.ro · CST –COMPUTER SIMULATION TECHNOLOGY | Transient Simulation Schematic Maximum voltage overshoot: Before: 1.8961V After: 1.8906V Number](https://reader034.vdocuments.site/reader034/viewer/2022052420/5acdba937f8b9a73128e5b84/html5/thumbnails/26.jpg)
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Transient Simulation Schematic
Maximum voltage overshoot: Before: 1.8961VAfter: 1.8906V Number of components: Before: 23 After: 23 56% Save 43¢
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VDD Specification
The VDD specification:VDD_min= 1.7 – 2% of VDDQmin = 1.66 VVDD_max= 1.9 + 2% of VDDQmax = 1.938V
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Comparison
Measurement of bareboard Measurement with decaps
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Conclusions
Signal Integrity
• Efficient SI simulation with 2DTL method
• Corner simulation for different IBIS model, fast and slow
• Exchange layout and SAM capability for case study
Power Integrity
• PEEC method for Inductance calculation
• Decap tool analysis for optimizing the PDN impedance
• SSO simulation incl. IBIS I/O buffer for more realistic result
• Excellent prediction of simulation result compare to measurement