annual meeting wp2- sensors heinz pernegger / cern 20 november 2013

Annual Meeting WP2- Sensors

Heinz Pernegger / CERN20 November 2013

TALENT Midterm Review 19.11.2013 2

Sensors

• Brief update to sensor related work currently in progress by TALENT fellows– Planar Sensors– 3D sensors– CVD diamonds– CMOS sensors


Planar Sensors / CiS

• Arno• Developed and processed multi-chip

sensors in view of Phase 2 upgrade• Next steps -> flip chip with FEI4 to do

sensor functional tests• Move to 6 inch processing


CiS planar sensor layouts

Different sensor designs for present and future of ATLAS

Comparison between different sensor sizes

CiS - 4“ imminent production

• Testing of LDI (Laser Direct Imaging, maskless) for implant and oxide layers

• 1 batch (9 wafers <100>) with no changes to layout• 1 batch (5 wafers <100>, 4 wafers <111>) with partial

minimisation of implant and oxide layers

Slide5

[µm]

CiS FE-I4 SC with bias grid variants

Slide6

Bias Grid/Dot Variations

• Var. 1: bias dots unchanged, grid per column

• Var. 2: bias dots unchanged, grid at pixel center

• Var. 3: bias dots and grid at pixel center

CiS - FE-I4 SC variations overview

Slide7

Additional testing of variations of• Bias dot implant diameter• Pixel implant width

• Pixel size 250 x 25 µm2

• Only half of the pixels are read out• 2 different bias grid layouts


3D detectors

• Sonia & Laura• Focus on characterization of recently

produced sensors by CNM, FBK and Sintef• Main focus of sensor measurements is IV

behavior and breakdown voltage of devices– Time-stability of current measurements– Correlation guard ring current vs active area

current– Shift of breakdown voltage vs different

conditions


3D – Oslo/Sintef

Voltage (V)

Curr

ent (

-A)

• Measurements by Laura

• Study IV characteristics after different sensor treatments

Curr

ent (

-A)

Voltage (V)

How they should look

C16_CMS_1_81After Baking


3D – Cern/CNM/IFAE

• Measurements by Sonia• Correlate IV measured on guard ring to full active area• Monitor IV behavior all through the assembly process

of modules


3D continued

• Use UBM processed sensors to contact all pixels on probe station• Determine V_bd after UBM and dicing on full active area and

compare to guard ring current measured on wafer level• Preliminarily found that guard ring only is not ideal as QA

measurement for full sensor• Triggered re-measurements of sensors in IBL SC module

production

Viacheslav Filimonov (ESR2, WP2) TALENT Midterm Review 19.11.2013

Test system/Bonn• By Slava• Setting up a four pixel chip read-out system

– ATLAS FE-I4 chips– Based on the newly developed system

• Characterization of the system performance– Lab– Test beam measurements

7

Four chip read-out– Introduced in 2012– New adapter board: burn-in card– Support of up to four FE-I4 chips (four single- or two double chip modules)


CVD - Diamond Beam Monitor

• Matevz• Most focus went to construction, module

measurement and integration of DBM telescopes

William Trischuk: Diamond Beam Monitor 14

DBM module construction• From TALENT side a collaboration by Bonn, IZM, CERN• Found larger area of disconnected bumps – resolved by second

reflow in different equipment• Tested module function with Sr90 source before and after

integration to telescopesMDBM31 (TDBM05)

MDBM03 (TDBM01)

Hit

map

on

mod

ules

dur

ing

DBM

QA

Hit

map

on

tele

scop

es(d

iffer

ent m

odul

es)


Diamond - application

• CERN/CIVIDEC• Use diamonds as beam monitors in accelerator

instrumentation and neutron detector• Study signal response of scCVDpre/post irradiation to

understand charge trapping mechanisms– Use TCT and TSC setups– Over very large temperature range (2K to RT)

• Develop FPGA-based signal processing for scCVD as beam monitors using the knowledge from measurements above

• Test beam monitor with converter foil as neutron detector at different energies.

N -> a Conversion/CIVIDEC

Goal: Reject the gamma-background via real-time pulse shape analysis.

Non-rectangular = gammas

n

Li converter foil

a

g

Diamond detector

Rectangular = alphas

n from reactor Pulse shapes

Background rejection/CIVIDEC

Alpha particle = rectangular shape Photon = non-rectangular


Depleted CMOS sensors

• Create depleted volume under n-well -> this serves as volume for particle detection

• Electronics is include in sensor pixel -> “Smart Pixel” allows first processing of information on sensor

• Depleted Monolythic Active Pixel Sensor (DMPAS)

• Potential as “Sensor”• CMOS -> large volume at lower price + larger wafers• higher operational voltage and/or higher resistivity processes allow charged particle detection by depletion: Depleted CMOS sensors

•A number of potential advantages:

Sub-pixel structure -> Better spatial resolutionAnalog amplifier + descriminator on sensor -> digital readout with possibility to combined cells to pixel or strips


AMS 180nm HVCMOS-FEI4

uses AMS 180 nm HV process (p-bulk) ... 60-100 V deep n-well to put pMOS and nMOS (in extra p-well) some CMOS circuitry possible (ampl. + discr.) need / profit from FEI4 and followers ~10-20 µm depletion depth 1-2 ke signal various pixel sizes (~20x20 – 50x125 µm2) several prototypes also strip like geometries possible replaces „sensor“ (amplified signal)

in hybrid pixel bump bonding or glue bonding

indications of radiation hardness to ~ 1016 neq / cm2

I. Peric et al.

• Measurements by Simon & Antonello

Signal formation

20

HV2FEI4-V2w/ radhard design features

Sr-90, 1400 e-

Fe-55, 1660 e-

I. Peric et al.

• Hybrid detector = CMOS sensor glued to ROC

• Carried out pre (right) and post (left) irradiation measurements

• Signal seen after 1016n/cm2

• In the future need to understand the details of charge collection, field and charge trapping

• Study different processes and foundries with “common cell layout”• High voltage processes• High resistivity processes

• ESR 6 join the work on depleted CMOS sensors

HVCMOS after irradiation

21

HV2FEI4 glue bonded to FEI4and irradiated to 1 x 1015 neq/cm2

still working

DESY testbeam

preliminary irradiation tests: using reactor neutrons 1x1015 and 1x1016 neq/cm2

also to protons and X-ray (862 Mrad !)

very preliminary results after

1 x 1016 neq/cm2

- @RT after ~30 days / annealing- source scan with ~25 V bias- still alive, noise occ ~10-10


Outlook

• Sensor work wide spread between TALENT members• Many TALENT fellow from different WP contribute to

sensor RD with many different and interesting measurements!

• RD on different technologies looks well balanced across– Planar– 3D– Diamonds– CMOS

• Looking forward to your ideas & comments!

Thank you for your attention

annual meeting wp2- sensors heinz pernegger / cern 20 november 2013

Documents

wp2 talent midterm review

multichip sensors

produced sensors

different sensor sizes

guard ring current measured

bias dots unchanged

pixel center cis fe

sensor functional testsmove