wp4: radiation hard semiconductor detectors - status of activities - michael moll (ph-dt), heinz...

WP4: Radiation Hard Semiconductor Detectors- Status of activities -

Michael Moll (PH-DT), Michael Moll (PH-DT), Heinz PerneggerHeinz Pernegger (PH-ADE) (PH-ADE)

PH Theme 3 R&D meeting 4.6.2009

WP4 – Challenge and Aim WP4 – Work program, organization and participants Status:

Pixel sensor evaluation/development ( in collaboration with ATLAS) Strip sensor evaluation/development ( in collaboration with CMS) Generic R&D ( in collaboration with RD50) Build up of infrastructure ( common CERN infrastructure)

Work plan for 2009/2010

OUTLINE (Michael: 3-5 June 09: RD50 Workshop in Freiburg)

M.Moll, H.Pernegger – PH-WP Meeting – 4 June 2009 -2-

1013 5 1014 5 1015 5 1016

Φeq [cm-2]

5000

10000

15000

20000

25000

signal [electrons]

n-in-n (FZ), 285μm, 600V, 23 GeV p p-in-n (FZ), 300μm, 500V, 23GeV pp-in-n (FZ), 300μm, 500V, neutrons

p-in-n-FZ (500V)n-in-n FZ (600V)

M.Moll - 08/2008

References:

[1] p/n-FZ, 300μm, (-30oC, 25ns), strip [Casse 2008][2] n/n-FZ, 285μm, (-10oC, 40ns), pixel [Rohe et al. 2005]

FZ Silicon Strip and Pixel Sensors

strip sensorspixel sensors

Challenge: Sensors for the SLHC TrackersNote: Measured partly

under different conditions! Lines to guide the eye

(no modeling)!

Strip sensors: max. cumulated fluence for LHC and SLHC

Pixel sensors: max. cumulated fluence for LHC and SLHC

LHC detectors would fail in SLHC due to radiation damage

SLHC will need more radiation tolerant tracking detector concepts!


Work program and structure of WP 4

1. Development and evaluation of pixel sensor concepts in framework of ATLAS Pixel Upgrade projects (H.Pernegger, A. La Rosa)

Evaluation of rad. tolerant sensors for innermost pixel layers in view of IBL and SLHC pixel:Pixel technologies: Silicon planar sensors, Silicon 3D sensors, Diamond sensors

WP4-Fellow A.La Rosa has become a driving force for organization and running of testbeam and irradiation campaigns for the ATLAS pixel community.

2. Development and evaluation of sensor concepts for CMS upgrade in framework of CMS Tracker Upgrade projects (M.Mannelli)

Sensor R&D program with HPK (Hamamatsu) to evaluate sensors based on various silicon sensor materials: FZ, MCZ and EPI silicon of n- and p-type and different thickness

Part of prg. for preproduction, qualification and large scale production of CMS phase II upgrade

3. Generic R&D on radiation tolerance of silicon sensors in framework of RD50 project (M.Moll)

Generic R&D on understanding of radiation damage in silicon

4. Build up of test equipment & infrastructure for PH common use (M.Moll, M. Fahrer) Equipment: Probestations for CV/IV measurements of sensors TCT/ b-source test system in climate controlled container

WP4 is organized around 4 partly overlapping projects


WP4 – ParticipantsCoordinator: Michael Moll (PH-DT)

Project 1 (ATLAS): WP4-Fellow: Alessandro La Rosa

Start: 1.4.2008, PH-DT, Experiments: ATLAS / RD50 Supervisor: Heinz Pernegger (PH-ADE)

H.Pernegger, S.Roe, B. di Girolamo, D.Dobos

Project 2 (CMS): M. Mannelli

Project 3 & 4 (RD50 & Test equipment): WP4-Fellow: Manuel Fahrer

Start: 1.3.2008, PH-DT, Experiments: RD50 Supervisor: Michael Moll (PH-DT)

Michael Moll, K.Kaska (PhD student), N.Pacifico (MCPAD ESR) R.Fortin, A.Guipet (Technical support)

Observers (presently no active role)

LHCb : Paula Collins ALICE : Petra Riedler TOTEM: Gennaro Ruggiero


Pixel Sensors R&D at CERN

Studies of different detector materials for (very) high radiationClose collaboration between CERN group on ATLAS upgrade, sensors RD groups (RD50, RD42) and CERN PH-DT (SLHC-PP / WP4 – Rad. Hard Detector).

Interests in the following specific areas:1.Performance evaluation of different sensor types with the sLHC front-end electronics (The interface sensors to electronics)

2.Characterization of sensor before & after irradiation in Lab with sLHC front-end electronics (using currently the ATLAS FE-I3 pixel chip)

3.Test beams with different sensor types.

Input: A. La Rosa & H. Pernegger5

CERN Participants: B. Di Girolamo, D. Dobos, A. La Rosa, H. Pernegger, S. Roe

Collaboration:ATLAS RD on 3D-Si Detectors (since Sept. 08)Currently measure ATLAS layout 3D Stanford and 3D FBK/irst detectorsATLAS RD on Planar sensors (since Feb.09)Measurements on “standard” N-in-N detectors, N-in-P /thin nextATLAS RD on CVD Diamond pixel detector (since Feb. 08)Measurements on single-crystal single-chip module.


3D-Si sensors

6/4/09 A. La Rosa & H. Pernegger 6

Started to do measurements on different detectors (FBK/irst 2E, 3E and 4E-types): Leakage currents Threshold scan (threshold and noise measurements) Noise vs bias voltage Source test with Am-241, Cd-109 and Sr90

Am241

Sr90

MPV ~14k2 eThick. ~ 220um


Planar Pixel Sensors

Planar Pro’s n-on-n is a proven technology n-on-p single sided process (costs) is being

studied Lower Cdet -> lower noise, lower in-time

threshold for same power settings in the FE. Partially depleted sensors collect charge

Con’s Need for slim edges -> reduce dead area in Z Need high bias voltage (~1000Vbias?) N-on-p need high voltage insulation on chip side

Study n-in-n and n-in-p structures with DOFZ and MCz wafers

Develop “slim” edges (reduce guard ring width)

Submitted prototypes run at CiS (Erfurt) and plan participation in the VTT run with pixel structure

T=-20 to -30oCG. Casse et al., IEEE TNS, Vol. 55, No. 3, 2008, p. 1695Liverpool data not annealed

I. Mandić et al, RESMDD 08

[G. Kramberger, IEEE NSS 2008, Dresden]

expected in-time threshold


sc-CVD Diamond

6/4/09 A. La Rosa & H. Pernegger 8

Th@ 1k6e-Noise ~ 145e-Lower capacitance Lower Th (factor 2) & Noise But 50% Silicon signal !

After 0.7 x 1015 p/cm2


WP4 (2010) – Proposal for common R&D within ATLAS/RD42/RD50 community

Input: A. La Rosa & H. Pernegger9

In the framework of SLHC-PP /WP4 (Rad. Hard Detector) project we would like to propose a Common ATLAS Pixel Sensors RD activity for tracking detector environment at CERN for 2010.So we propose to organize a:- Common lab characterization of bonded sensors at CERN ATLAS Pixel Lab; - Common irradiation test (proton at CERN and neutron at Ljubljana facility) at a high fluences (FEI3 compatible and after FEI4);- Common test-beam with MIP at CERN, before and after irradiation test. The aim of the activity would be give out a comparative overview about the next pixel sensor generation for tracking detector environment to facilitate a decision regarding their implementation in the ATLAS-IBL project and in the ATLAS-SLHC Pixel Upgrade.

For 2010 we’d request a Doctoral Student (start date 1.1.2010) who could work full-time in the RD activity.

Status of proposal:

Distributed to potential partners


CMS SLHC Tracker - Thin Sensor R&D with HPK -

Phase I: Targeted R&D ~ 2008 - 2012 Establish required sensors characteristics & basic specifications Single Source R&D with HPK agreed with CERN, together with framework

for Market Survey & Procurements for Phase II & Phase III

Phase II: Preproduction and Qualification ~ 2012 - 2014 Finalize detailed specifications and QA protocols Qualify for large scale production

Phase III: Large Scale Production ~ 2014 - 2016Input: Marcello Mannelli

Project is integral part of CMS

Tracker upgrade

Outline plan:

WP4 participation in Phase I:

• coordination of project M .Mannelli (CMS & WP4)

• irradiation of sensors

• characterization of sensors (… requires still the set up of some specific equipment at CERN)


Status of HPK Thin Sensor R&D Order

Order finally placed ~ February Central European Consortium, CERN, INFN, PSI, US

Detailed specs agreed Wafer procurement ongoing

substrate typeFZ

200umMCZ

200umFZ

100umepi

100um epi 75umFZ

300um Total

& Active Thickness carrier thinning carrier

P-on-N Production 6 6 6 6 6 6 36

N-on-P Production p-spray 6 6 6 6 6 6 36

N-on-P Production p-stop 6 6 6 6 6 6 36

2'nd metal production P-on-N 6 6

2'nd metal production N-on-P p-stop 6 6

2'nd metal production N-on-P p-spray 6 6

Total 36 18 18 18 18 18 126

Input: Marcello Mannelli


Status of HPK Thin Sensor R&D Order

Wafer Layout being finalized

Input for full set of designs provided to HPK

Waiting response from HPK• Expect feed-back within

coming weeks



Schedule for HPK thin sensor R&D order

Finalize & Sign-off mask designs: 15 July

Expected Sensor Delivery: September ~ October

Sensor Qualification and Acceptance:

September ~ December Acceptance Test protocols and set-ups ready

Full Sensor Electrical & Functional Characterization, pre-irradiation:

October ~ December Characterization protocols and set-ups ready

Irradiation and characterization program in 2010 (January – December) Proton, Neutron and mixed irradiations in 4 campaigns Irradiation campaigns and test structures optimized for

a) R > 4 cm and b) R > 22 cm

Draw conclusions December 2010



Status: Build up of test equipment

‘Refurbishment’ of characterization tools in 28-2-017 (done) (Laboratory for Departmental Silicon Facility & RD50 support)

Probe station for CV/IV measurements (4” chuck in dark box, CV/IV up to 1000V) Simple TCT (Transient Charge Technique) (one channel, limited space and cooling capacity) CCE with Sr90 source (one channel, μs shaping, limited size of samples and limited cooling)

Pixel test stations in Bat 161 for sensor+FE chip measurments fully operational since early 2008

With source and electronic calibration

For 2010 on Pixel Tests Stands Adaptation with new controller electronics for new FEI4 chip Installation for lower temperature cooling (T~ -20C) for tests of irradiated pixel sensors

New TCT/CCE setup in 28-2-017 (under commissioning, see next slide)

Two further installations planned: Probe station with cold chuck for CV/IV measurements

(status: designed, some parts machined, realization delayed due to high work load in PH-DT bonding lab & radiation facilities keeping technicians busy with ‘LHC relevant work’)

Probe station with characterization tools for measuring high number of CMS Tracker prototype sensors

• Detailed requirements to be specified by CMS• Installation in DSF (Departmental Silicon Facility)

Input M.Fahrer, M.Moll


TCT/CCE setup (28-2-017)Characterization methods TCT (Transient Charge Technique)

strip and pad sensors can be mounted lasers illumination on both sides of sample red + infrared laser (ps pulses)

CCE (Charge collection efficiency) Sr90 source Scintillator based trigger

CV / IV CV presently at 1, 10, 100 KHz

(to be extended to variable frequency up to 1 MHz)

Mechanics & Cooling Cooled with silicon oil

vacuum or dry atmosphere to avoid formation of ice

Temperatures down to below -30C (full range still to be tested)

Movable from outside laser and source

can be scanned over DUT Modular system with flanshes

allows for easy mounting of additional feedthroughts

Sample mounting & Electronics SMA connectors (HF)

Bandwidth limitations due to scope:3 GHz scope would be very useful

Sample boards (support PCB) detectors to be bonded good thermal & HF properties

Amplification commercial solutions for

single channels ALIBAVA system for strip sensor CCE

• based on LHCb Beetle Chip• 25ns shaping time, 128 channels


TCT/CCE Setup

Sr 90

Source

PCB support

PM

laser focusercooling plate

equipment movable against

support plate


Sensor Development within RD50

Strip sensors produced in framework of RD50 (~50 inst.) WP4 participation in ongoing RD50 sensor characterizations

sensors are partly already irradiated and ready for measurements at CERN WP4 participation in new RD50 processing runs

(next project: Sensor production with VTT in Finland / mask under design)

CIS Erfurt, Germany 2005/2006/2007 (RD50): Several runs with various epi 4” wafers only pad detectors

CNM Barcelona, Spain 2006 (RD50): 22 wafers (4”), (20 pad, 26 strip, 12 pixel),(p- and n-type),(MCZ, EPI, FZ) 2006 (RD50/RADMON): several wafers (4”), (100 pad), (p- and n-type),(MCZ, EPI, FZ)

HIP, Helsinki, Finland 2006 (RD50/RADMON): several wafers (4”), only pad devices, (n-type),(MCZ, EPI, FZ) 2006 (RD50) : pad devices, p-type MCz-Si wafers, 5 p-spray doses, Thermal Donor compensation 2006 (RD50) : full size strip detectors with 768 channels, n-type MCz-Si wafers

IRST, Trento, Italy 2004 (RD50/SMART): 20 wafers 4” (n-type), (MCZ, FZ, EPI), mini-strip, pad 200-500μm 2004 (RD50/SMART): 23 wafers 4” (p-type), (MCZ, FZ), two p-spray doses 3E12 amd 5E12 cm-2 2005 (RD50/SMART): 4” p-type EPI 2008 (RD50/SMART): new 4” run

Micron Semiconductor L.t.d (UK) 2006 (RD50): 4”, microstrip detectors on 140 and 300μm thick p-type FZ and DOFZ Si. 2006/2007 (RD50): 93 wafers, 6 inch wafers, (p- and n-type), (MCZ and FZ), (strip, pixel, pad)

Sintef, Oslo, Norway 2005 (RD50/US CMS Pixel) n-type MCZ and FZ Si Wafers

Recent productions of Silicon Strip, Pixel and Pad detectors within RD50(non exclusive list):

Details:

http://www.cern.ch/RD50/


RD50 – Example of recent work “Mixed Irradiations” of MCZ silicon strip

sensors Mixed irradiations performed with:

(a) 5x1014 neutrons (1 MeV equivalent fluence) (b) 5x1014 protons (1 MeV equivalent fluence)

FZ (n-in-n)Mixed Irradiation:

Damage additive!

MCZ (n-in-n)Mixed Irradiation:Proton damage “compensates” part of neutron damage (Neff)

500V

Comment: NIEL scaling very strongly violated !

[T.Affolder, G.Casse et al.]

Results from November 2008: Needs further study with both nMCz and pMCz substrates and differing

mixed doses … hot topic for 2009/2010!

More charge collected at 500V after additional irradiation!!!


p-type FZ Silicon Sensors

Higher voltage helps!

Which voltage can be applied?

1014 5 1015 5 1016

Φeq [cm-2]

5000

10000

15000

20000

25000

signal [electrons] n-in-p (FZ), 300μm, 1700V, neutrons [2]

n-in-p-FZ (1700V)

n-in-p (FZ), 300μm, 500V, 23GeV p [1]n-in-p (FZ), 300μm, 500V, neutrons [1]n-in-p (FZ), 300μm, 500V, 26MeV p [1]n-in-p (FZ), 300μm, 800V, 23GeV p [1]n-in-p (FZ), 300μm, 800V, neutrons [1]n-in-p (FZ), 300μm, 800V, 26MeV p [1]

n-in-p-Fz (500V)

n-in-p-Fz (800V)

p-in-n (FZ), 300μm, 500V, 23GeV p [1]p-in-n (FZ), 300μm, 500V, neutrons [1]

p-in-n-FZ (500V)

M.Moll - 08/2008

References:

[1] p/n-FZ, 300μm, (-30oC, 25ns), strip [Casse 2008][2] p-FZ,300μm, (-40oC, 25ns), strip [Mandic 2008]

[3] n/n-FZ, 285μm, (-10oC, 40ns), pixel [Rohe et al. 2005][1] 3D, double sided, 250μm columns, 300μm substrate [Pennicard 2007][2] Diamond [RD42 Collaboration][3] p/n-FZ, 300μm, (-30oC, 25ns), strip [Casse 2008]Data from Gianluigi Casse et al. (Liverpool)

presented on VERTEX 2008

FZ Silicon Strip Sensors

500V

800V

1700V

Data: G.Casse et al. (Liverpool) [RD50 06/2008 & VERTEX 2008]and I.Mandic et al. (Ljubljana) [RD50 06/2008]


MCz-n – 8e14 n/cm^2 (front ill. – The only possible)

MCz-n – 8e14 neq /cm^2 (front ill. – The only possible)

neutrons

protons

Not ‘whole bulk’ type inversion, but still the junction on the back starts to prevail over the junction on the front – MCz-n irradiated with neutrons behaves in a similar way as FZ-n…

With protons the situation is radically different. The two junctions are there, but the one on the front remains higher than the one forming on the back.

Different kind of hadrons with different energies produce different development of the field profile in the detector.

WP4 generic research: MCZ siliconType inversion problem in MCz-Si with 24 GeV/c p+ (2/2)

under publication in NIMA


WP4 generic research: Epitaxial siliconCollected charge in EPI

0 100 200 300 400 500 600 700 800

0

2000

4000

6000

8000

10000

collected charge [e

-]

bias voltage [V]

ref. ref. 1x1012

7x1012

3x1013

1x1014

3x1014

1x1015

3x1015

CNM-22-E (p-type) neutron irradiated

Φ [n/cm2]

0 100 200 300 400 500 600 700 800

0

2000

4000

6000

8000

10000

12000

collected charge [e

-]

bias voltage [V]

ref.3x1012

5x1012

1x1013

3x1013

1x1014

3x1014

1x1015

3x1015

8x1015

HIP-004-C (n-type) neutron irradiated

Φ [n/cm2]

0.0 2.0x1015 4.0x1015 6.0x1015 8.0x10150

1500

3000

4500

6000

7500

9000

10500

12000

collected charge [e

-]

Φeq [cm-2]

Epi (n-type) HIP-004-C neutron Epi (n-type) HIP-004-C proton Epi (n-type) CNM-11 Epi (p-type) CNM-22 neutron Epi (p-type) CNM-22 proton

charge collected @ 200V

Collected charge in 150μm EPI n- and p-type after 24 GeV/c proton and 1 Mev neutron irradiation

•At low fluences a drop in the collected charge is observed in n-type material but not in p-type•At the highest investigated neutron fluence, the collected charge is higher than expected from the behaviour at moderate fluences


Workplan 2009 & 2010 Workplan “ATLAS pixels”:

Extension of setup to include new chip controller + pulsed laser source (under study) (2009/10) Participation in ATLAS Pixel upgrade irradiations & testbeams (2009/2010) Active participation in the procurement and assembly of pixel test modules

(sensors bump bonded to ATLAS pixel chip) for lab and beam tests (2009/2010) Contribute measurements on different pixel sensor technologies to ATLAS IBL (2009/10)

Workplan “sensors for CMS” Participate in CMS work on sensor characterization before & after irradiation (2010)

Workplan on activities in framework of RD50 Submission of detector production run at VTT, Finland (2009) Detailed study on reverseannealing in p-type silicon strip sensors (2009/2010) Further studies on MCZ silicon in mixed irradiation fields (2009/2010) Participate in RD50 sensor evaluation program (MCZ vs. FZ, n-vs.p-type) 2009/2010

Workplan on common infrastructure at CERN Extension of TCT/CCE to use ALIBAVA system (LHCb Beetle chip) -- 2009 Probe station for CMS and common use in DSF – (2009/2010)


Manpower request 2010

2nd board 2009: Fellow ship extensions

• La Rosa +6mo from 1.4.2010

• Fahrer +6mo from 1.3.2010

New Fellow (RD50)• Starting 1.1.2010

New Doctoral Student (Pixel Irradation & Testbeam support)• Starting 1.1.2010

1st board 2010 New Fellow

• Starting 1.7.2010


Spares

Spares


CCE/TCT : Instrumentation

Optics ps-Laser from PicoQuant two heads: 661nm and 1055nm low energetic pulses around 10pJ at lasing

threshold most interesting attenuated by micro screw directly at

coupling full and closed fiber solution with splitters

and shutters no manual intervention to fiber

path during measurements allows for reliable and

reproducible measurements focusing spot ~ 12μm on DUT at working

distance of 23mm

Environmental control cooling down to -40°C vacuum down to 0.06 mbar multifunctional DAQ & control unit

T,H & other analog signals low voltage clock

Prototype PCB Not yet optimized for

HF external bias board

for filtering and line matching

thus allows CV measurements as well

Gold-nickel plated Roger’s PCB

material for HF and good thermal conductivity


WP4

Contact with “clients”

Pixel sensordevelopment

(H.Pernegger, A.La Rosa)

“ATLAS environment” + “RD42 environment” for diamond sensor tests

“Common CERN infrastructure”

CMS sensors

(M.Mannelli)

“CMS environment”

ATLAS and CMS colleagues are part of the WP Heinz (ATLAS) working in framework of approved ATLAS upgrade projects Marcello (CMS) working in framework of approved CMS upgrade project

ALICE, LHCb and TOTEM Contact persons for WP4 at CERN appointed, Invited to participate in WP4

meetings and in WP4 activities

RD50 sensor characterization

(M.Fahrer, M.Moll, K.Kaska, N.Pacifico)

“RD50 environment”

Strip and Pad sensor characterization tools

(M.Fahrer, M.Moll)


WP4 generic research: MCZ siliconType inversion problem in MCz-Si with 24 GeV/c p+ (1/2)

Naïf interpretation of Vdep CV annealing curves:

•MCz-n silicon does not type invert with irradiation•MCz-p silicon stays p-type at lowest fluences, but at higher ones show n-type annealing behavior ->Type inversion?•Type inversion with annealing (n->p)

Annealing curves still quite different from what we would expect by “standard” diode behavior (during type inversion Vdep should go to zero)

Irradiation with hadrons produces two different space charge regions… This effect seems more dramatic in oxygenated device -> MCz and EPI Silicon…

It’s *not* anymore about whether the bulk inverts or not, but of the two junctions which one will prevail… ?


WP4 generic research: Epitaxial siliconEffective space charge in EPI

0 2 4 6 8 10 12 14 16

0.00

0.02

0.04

0.06

0.08

0.10

0.12

20V

10V

70V

60V

50V

40V

30V

I [V/50

Ω]

t [ns]

0 2 4 6 8 10 12 14 16 18

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

190V

160V

130V

100V

70V

40V

I [V/50

Ω]

t [ns]

220V

10V

After neutron irradiation n-type inverts to p-type

After proton irradiation p-type inverts to n-type

0.0 8.0x1014 1.6x1015 2.4x1015 3.2x10150

5

10

15

20

25

30

0

100

200

300

400

500

|Neff

| [10

12

cm-3

]

Φeq [cm-2]

neutron irradiatedn-type

HIP-004-C CNM-11-E

p-type CNM-22-E

proton irradiatedn-type

HIP-004-C CNM-11-E

p-type CNM-22-E

Vd [ ]V

In 150μm EPI the depletion voltage charge rises quicker with proton than with neutron irradiation. •After proton irradiation the space charge is positive •After neutron irradiation the space charge is negative

under publication in NIMA


Deliverables 2008 & 2009

Main deliverables for 2008 Pixel sensor test setup (Heinz/Alessandro) TCT/CCE test setup for strip sensors (Manuel/Michael) Submission of HPK Sensor Order

& Work plan for corresponding measurements at CERN in 2009 (Marcello / CMS project)

Main deliverables for 2009 Report on lab characterization (90Sr source/TCT) of irradiated sensors

• Performance before/after irradiation; evaluation of procurement, cost and integration issues for different sensor types

• Pixel: 3D, Diamond, Planar • Strip: RD50 and CMS sensors (p- and n- MCZ, FZ, EPI, thick vs. thin)

Test beam results • on pixel sensors (3D, Diamond, Planar sensors)

(to be produced in framework of ATLAS Pixel upgrade activities/test beams)

• on strip sensors (MCZ vs. FZ, thick vs. thin)(to be produced in framework of CMS and/or RD50 upgrade activities/test beams)

Probe station in DSF for sensor characterization (CV/IV) (CERN common infrastructure!)

wp4: radiation hard semiconductor detectors - status of activities - michael moll (ph-dt), heinz...

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slhc pixel sensors

tolerant sensors

interface sensors

strip sensors

silicon planar sensors

sensors rd groups rd50

cern phdt slhcpp wp4

michael moll phdt project