an overview of soi based memssoiconsortium.eu/.../10/overview-of-soi-based-mems.pdf · | 3 what are...
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![Page 1: AN OVERVIEW OF SOI BASED MEMSsoiconsortium.eu/.../10/Overview-of-SOI-based-MEMS.pdf · | 3 WHAT ARE MEMS AND NEMS ? •MEMS is the acronym of Micro Electro-Mechanical Systems •MEMS](https://reader035.vdocuments.site/reader035/viewer/2022070722/5f01cc0f7e708231d4011539/html5/thumbnails/1.jpg)
Jean-Philippe POLIZZI
MEMS Business Development Manager, DCOS, CEA-LETI
AN OVERVIEW OF SOI BASED MEMS
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About Leti
Founded in 1967
1,900 researchers
54 start-ups
& 365 industrial partners
2700 patents
318 M€ budget (80% contract R&D)
CEO
E SABONNADIERE
250 PhD students + 40 post PhD
with 85 foreign students (35%)
~ 40M€ CapEx
311 generated in 2016
40% under license
8500 m² clean rooms200 and 300 mm wafer fab
Operated 24/7
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WHAT ARE MEMS AND NEMS ?
•MEMS is the acronym of Micro Electro-Mechanical Systems
•MEMS are mechanical systems with components in the micrometer scale
•MEMS are micron sized devices that perform mechanical, optical, chemical
or fluidic functions . They are generally realized by the technology used to
manufacture integrated circuits, that is thin film deposition, photo-
lithography and etching.
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10’s
00’s
90’s
MEMS MARKETS EVOLUTION
80’s
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WHAT ARE THE USED FOR ?
$0M
$5 000M
$10 000M
$15 000M
$20 000M
$25 000M
2014
2015
2016
20172018
20192020
MEMS devices US$M forecasts per application market
Aeronautics Automotive Consumer Defense Industrial Medical Telecom
Source: Yole Développement
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Thin Film Technology
(Vac.dep. / shadow mask)
80 90 00
year
10 20
Tran
sfe
rsK
ey d
ate
s
Bulk Technology
(Litho / wet etching)
1984 - Comb drive accelero patent
19
81
Hygrometer
Weight sensor
19
80
Pacemaker accelerometer
Geophone
19
96
Miniature pressure sensor
19
96
Accelerometer
20
05
Quartz accelerometer
19
87
High perf. pressure sensor
19
98
Surface Technology
(Litho / DRIE on SOI)
1996 - Startup creation
30+ YEARS BACKGROUND IN MEMS SENSORS
Inertial platform
2011M&NEMS platform
2014
Above-IC GMR Technology
2012
XXXXXX
PZT actuator process
2017
Capacitance stacking
2016
XXXXXX
Nano-scale Technology(DUV litho on thin SOI)
2007 - Caltech Alliance
2013 - Startup
2014 Startup
2011 - Startup
2015 Startups
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TECHNOLOGICAL PLATFORM• MEMS 8”(1000 m²) + FE 8”(3000 m²) Cleanrooms
• Specific MEMS equip. : DRIE, HF-vapor, bonder…
• 5 shifts working: 7days/week – 24h/days
LCMC Lab.
Sensors Components
LCRF Lab.
RF Components
LCMA Lab.
Actuators Components
LCFC Lab.
Characterization & Reliability
3D Lab.
Packaging &Interposer
Overall MEMS activities > 200 people
Microsystems section
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WHY USE SOI FOR MEMS ?
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HOW MEMS ARE MADE ?
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THE EFFECT OF STRESS GRADIENT
#1 Reason for using SOI: (almost) Stress Free Material !
#1 Reason for using SOI: Compatibility with thick
structural layers
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Silicon is an excellent
mechanical material !
E=169 GPa
WHY USE SOI FOR MEMS ?
#2 Reason for using SOI: Single Crystal Silicon is an
excellent structural material
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WHY USE SOI FOR MEMS ?
#3 Reason for using SOI: No CTE mismatch with
underlying support
Buckling
happens
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WHY USE SOI FOR MEMS ?
#4 Reason for using SOI: Built-in sacrificial layer
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WHY USE SOI FOR MEMS ?
#5 Reason for using SOI: Precise thickness control of
structural layer
Pressure sensors MUTs Force sensors
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WHAT TYPES OF MEMS ?
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Accelerometer
Inertial Sensors
Geophone
3D Gyro
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Example of technology transfer to industrial company
HARMEMS accelerometer shipments - units
Development and transfer of the HARMEMS technology to Freescale
HARMEMS accelerometer shipments: 350+ million units
Inertial Sensors
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Pressure
Membrane based Sensors
3D Force sensor
cMUT and
pMUT
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NEMS
200 nm AlSilinewidth200 nm AlSilinewidth
L= 1.6µm - ø~10nm
MEMS for time reference
(nano-gaps)
100 MHz / Q=40 000
NEMS RESONATORS CO-INTEGRATED WITH CMOS
Monolithic integration with
CMOS
SEM view
CMOS
NEMS
Capacitive resonators with
STMicro 0.35µm CMOS (IEDM
2012)
Piezoresistive resonators with
LETI FDSOI CMOS (ISSCC 2012)
MOS circuit
NEMS
Si(encapsulated
with SiO2)
Oxide
700nm
Amplification
Bias stageBuffer stage
Piezoresistive
gauges used
for detection
Electrode for
capacitive
in-plane
actuation
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NEMS-BASED SENSORS PLATFORM
FOR GAS AND BIO-SENSING
Mass
loading
Mass
loading40
2
lM
f
m
f
eff
Responsivity
3
0
2 lMm
Resolution
µbolometer
Freq
uen
cy s
tab
ility
Freq
uen
cy s
tab
ility
Cellular force sensor
Gas detection Mass-spec for Bio applications
• High resolution• Very short response time• High integration
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MEMS size inertial mass
+Nano-size piezoresistive gauge
Miniaturized sensors
Generic platform
Not sensitive to parasitics
Well known and robustpiezoresisitive detection
Strongly differentiated approach (20+ patents)
3-axis
Gyroscope
3-axis
Magneto
3-axis
Accelero
X
ZY
Microphone
M&NEMS "Generic" Platform
Pressure
sensor
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M&NEMS 6-AXIS COMPASS/ACCELEROMETER
6-axis mechanical footprint ≈ 1,1mm²
Low power consumption (30µW/axis in DC)
Robust to external field (x10 compare to Hall, GMR, TMR)
1 electronic common for each of the 6 axis
High linearity
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3-AXES M&NEMS GYROSCOPE
Mechanical footprint ≈ 2 mm²
Cross-axis rejection > 59 dB
ARW 1,8 mdps/√Hz
Bias Instability = 1.2°/hr
Linearity error is < 0.25% of the FSR
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M&NEMS PRESSURE SENSOR
Mechanical footprint ≈ 0.1mm²
High linearity
Auto-test electrode
Reliability:
Protected gauge from external environment
Over-pressure protection (stops)
Compatible with high temperature
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CONCLUSION
80% of the MEMS sensors developed in
Leti are based on SOI wafers Accelerometers, gyrometers, pressure, force sensors
Microphones, MUTs
Mass sensors based on vibrating beams
1. Stress free structural layer
2. Single Crystal Silicon shows superior
mechanical properties
3. No CTE mismatch with support
4. Built-in sacrificial layer
5. Precise control of structural layer thickness
30 years experience in MEMS
200 people involved in MEMS (sensor, actuator, RF, packaging, process, characterization)
All 8” MEMS/NEMS technologies in-house
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Leti, technology research institute
Commissariat à l’énergie atomique et aux énergies alternatives
Minatec Campus | 17 rue des Martyrs | 38054 Grenoble Cedex | France
www.leti.fr
Thank you for your attention