an innovative process to fabricate interphase-free copper ... iii/iii-2.pdfthomas guillemet 1, 2 *,...
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An innovative process to fabricate interphase-free
copper / diamond composite films
Thomas Guillemet 1, 2 *, Jean-Marc Heintz 1, Namas Chandra 3,
Yongfeng Lu 2 and Jean François Silvain 1Yongfeng Lu 2 and Jean-François Silvain 1
1 Institute of Condensed Matter Chemistry of Bordeaux, CNRS, Pessac, France2 Department of Electrical Engineering, 3 Department of Mechanical and Materials
Engineering, University of Nebraska-Lincoln, Lincoln, NE, USA
www.icmcb-bordeaux.cnrs.fr / * [email protected] 1
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Contents
1. Background & Motivations
2. Processing
3. Characterization and Results
4. Conclusions and Prospective
5. Acknowledgements
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Contents
1. Background & Motivations
2. Processing
3. Characterization and Results
4. Conclusions and Prospective
5. Acknowledgements
3
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1. Background – Copper / diamond composites
Diamond: high thermal conductivity, low thermal expansion
Copper: high thermal conductivity, ductility
Thermal management applications
Raw diamond particleRaw diamond particle
Various processes:
High Pressure / High Temperature
Infiltration Cr-coated diamond particleCr-coated diamond particle
Permanent issue: low Cu C chemical affinity
Spark Plasma Sintering
Permanent issue: low Cu-C chemical affinity
Current solution: carbide forming additives: B, Cr
HHowever:
K. Chu et al., Journal of Alloys and Compounds 490 (2010), 453-458
Carbide interphases degrade the thermal performances
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1. Motivations
What? Diamond dispersed copper matrix composite films
with high thermal performances
and no carbide interphaseRaw diamond particleRaw diamond particle
How? Tape casting of Cu/D filmsHow? Tape casting of Cu/D films
Cu coated diamond particleCu coated diamond particleCopper coating of diamond particles Cu-coated diamond particleCu-coated diamond particle
Vacuum hot pressing
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1. Motivations
Why? Thermal management of power electronic modules
Silicon chips SnAgCu Solder joints
Copper films
Small CTESmall CTE
Large CTELarge CTE
Copper heat-sink Alumina substrate
Large CTELarge CTE
Trends: Packing density
Power / Heat flux density
Demand for efficient cooling materials at minimum cost
6Copper-Diamond films as heat-spreading layers in electronic packages
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Contents
1. Background & Motivations
2. Processing
3. Characterization and Results
4. Conclusions and Prospective
5. Acknowledgements
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2. Processing – Flowchart
Formulation Tape casting and drying Shaping
Hot pressing
DebindingReduction
400°C, 2h, under air400°C, 2h, under air400°C, 1h, under Ar/H2400°C, 1h, under Ar/H2650°C, 50 MPa, 30 min650°C, 50 MPa, 30 min8
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2. Processing – Formulation
Chemical Role
MatrixMatrixDendritic copper powderDendritic copper powder
ReinforcementsReinforcementsMBD6 50 µm diamond powder
MBD6 50 µm diamond powder
SolventSolvent
pp
Ethanol / 2-butanone (60/40)
Ethanol / 2-butanone (60/40)
Dispersant + Functionalization agent
Dispersant + Functionalization agentPhosphate EsterPhosphate Ester
(60/40)(60/40)
PMMAPMMA
DiButyl PhtalateDiButyl Phtalate
BinderBinder
PlasticizerPlasticizerDiButyl PhtalateDiButyl Phtalate PlasticizerPlasticizer
Mixing 15h at 20 rpm9
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2. Processing – Tape casting
Doctor blade
Motorized guide rail
Doctor blade Slurry
Silicon film SupportTape casting direction
Silicon film Support
Viscosity: 1 Pa sViscosity: 1 Pa.s
Doctor blade speed: 2 cm.s-1
G t thi k [300 1 5 ]Green tape thickness: [300 µm – 1.5 mm]
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2. Processing – Tape casting
Organics Diamond
Thickness controlGood surface finishL t
Net shapingEasy handlingL l bilit
Copper matrix
Low cost Large scale capability
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2. Processing – Debinding
2 hours / 400°C / under air: organics burnout
CuO nanowires growthCopper matrix oxidation
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2. Processing – Reduction
1 hour / 400°C / under Ar/H2: copper matrix reduction
Cu particlesCopper particles deposition onto diamond powders through phosphorus chemical bonds: C-O-P-O-Cu
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2. Processing – Copper / Carbon interface
Reduction step Hot pressing stepOxidation step
CuCuO
CuCuCuCuOCuO
Carbon
CarbonCarbon
Cu|
Cu|
CuP |P|O|
Cu|
P-O|C
P|O|C C CC
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2. Processing – Vacuum hot pressing
30 minutes / 650°C / 50 MPa30 minutes / 650 C / 50 MPaFast and low-cost sintering techniqueMultilayered Cu/D samples for thermal measurements purposes (4 mm thick)
2 cm
Cu / 20 vol.% DCu / 20 vol.% D
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Contents
1. Background & Motivations
2. Processing
3. Characterization and Results
4. Conclusions and Prospective
5. Acknowledgements
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3. Characterization and Results – Relative density
The Cu coating effectively actsas interfacial chemical bonding agent
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3. Characterization and Results – Thermal conductivity
The Cu coating enablesefficient interfacial heat transfer
λ = 470 W.m-1.K-1 with 40 vol.% diamondHigher conductivity is expected from single tape samplesHigher conductivity is expected from single tape samples
λ = 600 W.m-1.K-1 with 40 vol.% diamond using direct PM processing
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3. Characterization and Results – Thermal expansion coefficient
The Cu coating enablesefficient thermal expansion load transfer
12 × 10 6 °C 1 ith 40 l % di dα = 12 × 10-6 °C-1 with 40 vol.% diamond
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Contents
1. Background & Motivations
2. Processing
3. Characterization and Results
4. Conclusions and Prospective
5. Acknowledgements
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4. Conclusions
Advantageous tape casting process
Innovative and low-cost Cu coating process of diamond particlesof diamond particles
Dense Cu/D composite films with high thermal performances and no interphase
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4. Conclusions – Integration to power modules
As single thin filmAs single thin film
As multilayered system
As complementAs complement to Cu and/or Cu/CF for composite heat sink
Cu/DCu/D Cu/CFCu/CF
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4. Prospectives Influence of…
Diamond particles size? 40 µm40 µm 80 µm80 µm
Cu particles size/coverage?Copper coating tunability
(t, T)1(t, T)1 (t, T)2(t, T)2
Single tape systems?Single tape systems?
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Contents
1. Background & Motivations
2. Processing
3. Characterization and Results
4. Conclusions and Prospective
5. Acknowledgements
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5. Aknowledgements
The authors are grateful to the Région Aquitaine (France) and the
Office of Naval Research (USA) for their financial support.
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