an e.m. calorimeter on the moon surface
DESCRIPTION
MoonCal. An e.m. calorimeter on the Moon surface. R.Battiston , M.T.Brunetti, F. Cervelli, C.Fidani. O graziosa luna, io mi rammento che, or volge l’anno, sovra questo colle io venia pien d’angoscia a rimirarti G. Leopardi. Physics Perpectives. Mooncal could : - PowerPoint PPT PresentationTRANSCRIPT
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An e.m. calorimeter on the Moon surface
R.Battiston, M.T.Brunetti, F. Cervelli, C.Fidani
MoonCal
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Mooncal could :
Resolve the difference of electrons spectra proposed by the many diffusion models for sources in the TeV region from Vela, Cygnus loop and Monogem
Detect an excess of positrons and electrons by the excellent energy resolutionand the observations with high statistics
Provide complementary observations on gamma’s with respect to Glast by a better energy resolution above 100 GeV. Targets : Galactic and extra-Galactic diffuse components, supernova remnants, pulsars, AGN’s, GRB’s
Observe line gamma rays from SUSY particles annihilation. As the energy resolution is better at higher energies,Mooncal will precisely measure the signature of line gamma rays
Physics Perpectives
O graziosa luna, io mi rammentoche, or volge l’anno, sovra questo colle io venia pien d’angoscia a rimirarti G. Leopardi
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The regolith as sampling material for an EM
calorimeter
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Simulation of Regolith Composition
GEANT4 derives the Regolith Radiation Length (0) from chemical composition and relative densities
Regolith Radiation Length : 14.4 cm
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Gamma Rays at 100 GeV: Energy Deposit vs Depth
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Depth of Maximun Energy Deposit
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Gamma Rays at 100 GeV: Total Energy Deposit vs Depth
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Gamma Rays at 100 GeV: Tranverse Development
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r = 1 cm
L = 150 cmorL = 300 cm
d = 7.5 cm
d = 7.5 cm
Scintillator Geometry
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The layout (1)
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The layout (2)
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The layout (3)
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Gamma Ray at 100 GeV (1)
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Gamma Ray at 100 GeV (2)
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Gamma Ray at 100 GeV (3)
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Gamma Ray at 100 GeV (4)
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MoonCal simulation: Boundary conditions and restrictions
• CALORIMETER GEOMETRY:– Cylinder of 3 m radius and 1.5 m height filled with regolith and
scintillators of 1 cm radius and 1.5 m height separated by 7.5 cm (on a xy grid).
• ENERGY RESTRICTIONS:– Lower energy cut for gammas 550 keV– Lower energy cut for electrons and positrons 1.4 MeV
• GEOMETRY RESTRICTIONS:– Incident angle: 45° ≤ ≤ 80° longitudinal containment– Incident area: inside a disk of 1 m radius lateral containment
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Scintillator distance = 7.5 cmScintillator radius= 1 cm
Distance vs Scintillator Diameter (1)
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The resolution E/E has been fitted according to:
E
ba E +=
RESULTS
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Energy Resolution : d = 7.5
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Scintillator distance = 4 cm
Scintillator radius= 0.5 cm
Distance vs Scintillator Diameter (2)
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Energy Resolution: r = 0,5cm d= 4cm
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Energy Resolution
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Energy Resolution vs Incident Angle (1)
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Energy Resolution vs Incident Angle (2)
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Analysis Cuts:
-First plot: resolution between 0.1 and 1 GeV with the following lower cuts:
Gammas, electrons, positrons 1 keV
-Second plot: resolution between 1 and 50 GeV with the following lower cuts:
Gammas 2 keV, electrons 356 keV, positrons 347 keV
Low Energies Studies
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SiPM concept GM-APD gives no information on light intensity
SiPM first proposed by Golovinand Sadygov in the mid ’90
A single GM-APD is segmented in tiny microdiodes connected in parallel, each with the quenching resistance.
Each element is independent and gives the same signal when fired by a photon
output signal is proportional to the number of triggered cells that for PDE=1 is the number of photons
Q = Q1 + Q2 = 2*Q1
substrate
metal
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Features of a SiPMThe characteristics of a SiPM are:• capability to detect extremely low photon fluxes (from 1 to few hundred) giving a proportional information;• extremely fast response (determined by avalanche discharge): in the order of few hundreds of ps.
Other features are:• Low bias voltage (20-60V)• Low power consumption• Insensitive to magnetic fields• Compact and rugged
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First prototypes
The wafer includes many structurediffering in geometrical details
The basic SiPM geometry iscomposed by 25x25 cells
Cell size: 40x40m2
1mm
1mm
SiPM @ ITC-irst
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40 cm of regolith
T=-20 ± 3 C
Regolith Physical Properties
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Further Developments
Longitudinal segmentation of Scintillator Rods
Steps: 5 or 10 cm
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Numbers and Weight as a CONCLUSION
Area covered by a single rod Surfice covered by Moon Cal d = 4 cm Area ~ 7 cm2 ~28 m2
d = 7.5 cm Area ~ 24 cm2
d = 15 cm Area ~ 97 cm2
Scintillator rod : Wrapping in Carbon fiber
Weight of a single rod (length: 150 cm):
r=0.5 cm .15 Kgr= 1cm .5 Kg
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Energy deposit on scintillators
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Properties of a SiPMThe properties described for the GM-APD are valid for the SiPMwith two additional complications:
1) Further term in the photodetection efficiency:
PDE = Npulses / Nphotons = QE x P01 x Ae
Ae = (Active area) / (total SiPM area)
Dead area is given by the structuresat the edges of the microcell (metal layers, trenches, resistor…)
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Properties of a SiPM2) Optical cross-talkDuring an avalanche discharge photons are emitted.
3x10-5 photons with energy higher than 1.14eV emitted per carrier crossing the junction.[from A. Lacaita et al., IEEE TED, vol. 40, n. 3, 1993:]
Those photons can trigger the avalanche in an adjacent cell:
optical cross-talk.
Solutions:- operate at low over-voltage => low gain => few photons emitted- optical isolation structure:
cell1 cell2
cell1 cell2
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SiPM manufacturersRussian groups:• Obninsk/CPTA, Moscow (Golovin)• Mephi/PULSAR, Moscow (Dolgoshein)• JINR, Dubna (Sadygov)
They have been working on this since the beginning.
New labs/companies involved in SiPM production:• ITC-irst• Hamamatsu• SensL• MPI
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SiPM @ ITC-irstDevelopment of SiPM is done in the framework of anagreement between INFN and ITC called MEMS:
• role of ITC-irst: to produce a matrix of SiPMs with detection efficiency optimized in the short-wavelength region.• role of INFN (Pisa, Perugia, Bologna, Bari, Trento): to couple the SiPM with a scintillator, to develop a read-out electronics for calorimetry, PET, TOF applications.
Project started at the beginning of 2005.
Details on the status of the project: http://sipm.itc.it
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First productionCompleted in september 2005.Completed in september 2005.
Characteristics of the first fabrication run:
1) 11 photolithografic masks1) 11 photolithografic masks 180 process steps (3 months in clean room)180 process steps (3 months in clean room)
2) Substrate: p-type epitaxial, 42) Substrate: p-type epitaxial, 4m thickm thick 3) Quenching resistance made of doped polysilicon3) Quenching resistance made of doped polysilicon
4) No structure for optical isolation4) No structure for optical isolation
5) Geometry not optimized for maximum PDE5) Geometry not optimized for maximum PDE
Main objective was to study the breakdown properties!
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Electrical characterization
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
-40 -30 -20 -10 0Vbias [V]
Cu
rre
nt [
A]
IV characteristics of 10 devices
• Breakdown voltage 31V• Uniform VBD all over the wafer surface
position ofthe tested devices
T=22oC
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Signal characteristics
-0.3
-0.25
-0.2
-0.15
-0.1
-0.05
0
0.05
-1.0E-07 0.0E+00 1.0E-07 2.0E-07 3.0E-07
Time (s)
Vo
ltag
e (
V)
VBIAS=35.5V
Dark signal
single cell signal
doublesignal
(optical cross-talk)
Single signal @ 32.5, 34 and 35.5V
Rise time ~1nsRecovery time ~70ns
SiPM read-out by means of a wide-band voltage amplifier on a scope
-0.2
-0.15
-0.1
-0.05
0
0.05
-5 5 15 25 35 45 55 65 75 85 95Time (ns)
Vol
tage
(V
)
Vbias=34V
Vbias=35.5V
Vbias=32.5V
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Single electron spectrumSingle electron spectrum in dark conditionIntegration time = 100ns.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-2.0E-09 -1.5E-09 -1.0E-09 -5.0E-10 0.0E+00
QDC
No
rma
lize
d C
ou
nt
35V 34V 33V
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0.0E+00
2.0E+05
4.0E+05
6.0E+05
8.0E+05
1.0E+06
1.2E+06
1.4E+06
1.6E+06
1.8E+06
2.0E+06
31 32 33 34 35 36Bias Voltage (V)
Ga
in
GainGain vs Bias voltage
Q=Cmicrocell*(Vbias-Vbreakdown)
=> C = 80-90fF
T=22oC
Linear dependence,as expected.
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Preliminary optical characterization
Trigger from pulse gen.
Dark signals
Example of a Signal Response to light excitation (=470nm)
VBIAS=33.5V
T=22oC
bunch of photons
No measurementof PDE has beendone yet.
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Preliminary optical characterization
1pe 2pe 3pePulse height spectrum from low-intensity light flashes (red LED)
Each peak corresponds toa different number of fired cells
Very good single photoelectron resolution!
T=22oC
V=1.5V
T=22oCV=2V
1pe
2pe
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Conclusion• September 2005: first production of Silicon Photomultipliers at ITC-irst.
Extremely good results: Gain ~ 106
Dark count ~ MHz Recovery time ~ 70ns PDE measurement in progress, encouraging first results
• Second production run just completed. Implemented trenches for optical cross-talk isolation. Characterization in progress.
• Next goal: to reduce dark count acting on the technology