nvh820s75l4spb - automotive 750 v, 820 a single side
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© Semiconductor Components Industries, LLC, 2020
August, 2021 − Rev. 111 Publication Order Number:
NVH820S75L4SPB/D
Automotive 750 V, 820 ASingle Side Direct Cooling6-Pack Power Module
VE-Trac� Direct ModuleNVH820S75L4SPB
Product DescriptionThe NVH820S75L4SPB is a power module from the VE−Trac�
Direct family of highly integrated power modules with industrystandard footprints for Hybrid (HEV) and Electric Vehicle (EV)traction inverter application.
The module integrates six Field Stop 4 (FS4) 750 V Narrow MesaIGBTs in a 6−pack configuration, which excels in providing highcurrent density, while offering robust short circuit protection andincreased blocking voltage. Additionally, FS4 750 V Narrow MesaIGBTs show low power losses during lighter loads, which helps toimprove overall system efficiency in automotive applications.
For assembly ease and reliability, a new generation of press−fit pinsare integrated into the power module signal terminals. In addition, thepower module has an optimized pin−fin heatsink in the baseplate.
Features• Direct Cooling w/ Integrated Pin−fin Heatsink
• Ultra−low Stray Inductance
• Tvjmax = 175°C Continuous Operation
• Low VCESAT and Switching Losses
• Automotive Grade FS4 750 V Narrow Mesa IGBT
• Fast Recovery Diode Chip Technologies
• 4.2 kV Isolated DBC Substrate
• Easy to Integrate 6−pack Topology
• This Device is Pb−Free and is RoHS Compliant
Typical Applications• Hybrid and Electric Vehicle Traction Inverter
• High Power Converters
See detailed ordering and shipping information on page 5 ofthis data sheet.
ORDERING INFORMATION
www.onsemi.com
SSDC33, 154.50x92.0 (SPB)CASE 183AB
N3
P3T31 T32
3
E6
G6
C6
E5
G5
C5
N2
P2T22
2
E4
G4
C4
E3
G3
C3
N1
P1T12
1
E2
G2
C2
E1
G1
C1
T21T11
XXXXX = Specific Device CodeAT = Assembly & Test Site CodeYYWW= Year and Work Week Code
MARKING DIAGRAM
XXXXXXXXXXXXXXXXXXXXXXATYYWW
VE−Trac� Direct Module NVH820S75L4SPB
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Pin Description
Figure 1. Pin Description
P1
N1
P2
N2
P3
N3
T11 T12
1
C1
G1
E1
C2
G2
E2
T21 T22
2
C3
G3
E3
C4
G4
E4
T31 T32
3
C5
G5
E5
C6
G6
E6
PIN FUNCTION DESCRIPTION
Pin # Pin Function Description
P1, P2, P3 Positive Power Terminals
N1, N2, N3 Negative Power Terminals
1 Phase 1 Output
2 Phase 2 Output
3 Phase 3 Output
G1−G6 IGBT Gate
E1−E6 IGBT Gate Return
C1−C6 Desat Detect/Collector Sense
T11, T12 Phase 1 Temperature Sensor Output
T21, T22 Phase 2 Temperature Sensor Output
T31, T32 Phase 3 Temperature Sensor Output
MaterialsDBC Substrate: Al2O3 isolated substrate, basic isolation,
and copper on both sidesTerminals: Copper + Tin electro−platingSignal Leads: Copper + Tin platingPin−fin Base plate: Copper + Ni plating
Flammability InformationThe module frame meets UL94V−0 flammability rating.
VE−Trac� Direct Module NVH820S75L4SPB
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MODULE CHARACTERISTICS (Tvj = 25°C, Unless Otherwise Specified)
Symbol Parameter Rating Unit
Tvj Operating Junction Temperature −40 to 175 °C
TSTG Storage Temperature −40 to 125 °C
VISO Isolation Voltage (DC, 0 Hz, 1 s) 4200 V
LsCE Stray Inductance 8 nH
RCC’+EE’ Module Lead Resistance, Terminals − Chip 0.75 m�
G Module Weight 700 g
CTI Comparative Tracking Index >200 −
dcreep Creepage: Terminal to HeatsinkTerminal to Terminal
9.09.0
mm
dclear Clearance: Terminal to HeatsinkTerminal to Terminal
4.54.5
mm
Symbol Parameters Conditions Min Typ Max Unit
�p Pressure Drop in Cooling Circuit 10 L/min, 65°C, 50/50 EGW − 95 − mbar
P (Note 1) Maximum Pressure in CoolingLoop (relative)
TBaseplate < 40°CTBaseplate > 40°C
−−
−−
2.52.0
bar
1. EPDM rubber 50 durometer ‘O’ ring used.
ABSOLUTE MAXIMUM RATINGS (Tvj = 25°C, Unless Otherwise Specified)
Symbol Parameter Rating Unit
IGBT
VCES Collector to Emitter Voltage 750 V
VGES Gate to Emitter Voltage ±20 V
ICN Implemented Collector Current 820 A
IC nom Continuous DC Collector Current, Tvj = 175°C, TF = 65°C, Ref. Heatsink 600 (Note 2) A
ICRM Pulsed Collector Current @ VGE = 15 V, tp =1 ms 1640 A
Ptot Total Power Dissipation Tvj = 175°C, TF = 65°C, Ref. Heatsink 1000 W
di/dt IGBT Maximum di/dt during turning−on of IGBT, Tvj = 25°CTvj = 150°C
77
A/ns
dv/dt IGBT Maximum dv/dt during turning−off of IGBT, Tvj = 25°CTvj = 150°C
1210
V/ns
Diode
VRRM Repetitive Peak Reverse Voltage 750 V
IFN Implemented Forward Current 820 A
IF Continuous Forward Current, Tvj = 175°C, TF = 65°C, Ref. Heatsink 400 (Note 2) A
IFRM Repetitive Peak Forward Current, tp = 1 ms 1640 A
I2t value Surge Current Capability, tp = 10 ms, Tvj = 150°CTvj = 175°C
1900016000
A2s
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.2. Verified by characterization/design, not by test.
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CHARACTERISTICS OF IGBT (Tvj = 25°C, Unless Otherwise Specified)
Symbol Parameters Conditions Min Typ Max Unit
VCESAT Collector to Emitter SaturationVoltage (Terminal)
VGE = 15 V, IC = 600 A Tvj = 25°C − 1.30 1.55 V
Collector to Emitter SaturationVoltage (Chip)
VGE = 15 V, IC = 600 A Tvj = 25°CTvj = 150°CTvj = 175°C
−−−
1.251.371.40
1.50−−
VGE = 15 V, IC = 820 A Tvj = 25°CTvj = 150°CTvj = 175°C
−−−
1.401.591.63
−−−
ICES Collector to Emitter LeakageCurrent
VGE = 0, VCE = 750 V Tvj = 25°CTvj = 150°C
−−
−2.0
500−
�AmA
IGES Gate – Emitter Leakage Current
VCE = 0, VGE = ±20 V − − 300 nA
Vth Threshold Voltage VCE = VGE, IC = 90 mA 4.8 5.7 6.6 V
QG Total Gate Charge VGE= −8 to 15 V, VCE = 400 V − 2.3 − �C
RGint Internal Gate Resistance − 1.7 − �
Cies Input Capacitance VCE = 30 V, VGE = 0 V, f = 100 kHz − 60 − nF
Coes Output Capacitance VCE = 30 V, VGE = 0 V, f = 100 kHz − 1.90 − nF
Cres Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V, f = 100 kHz − 0.2 − nF
Td.on Turn On Delay, InductiveLoad
IC = 600 A, VCE = 400 V, VGE = +15/−8 V,Rg.on = 4 �
Tvj = 25°CTvj = 150°CTvj = 175°C
−−−
315320322
−−−
ns
Tr Rise Time, Inductive Load IC = 600 A, VCE = 400 V,VGE = +15/−8 V,Rg.on = 4 �
Tvj = 25°CTvj = 150°CTvj = 175°C
−−−
108127132
−−−
ns
Td.off Turn Off Delay, InductiveLoad
IC = 600 A, VCE = 400 V,VGE = +15/−8 V, Rg.off = 12 �
Tvj = 25°CTvj = 150°CTvj = 175°C
−−−
106311961203
−−−
ns
Tf Fall Time, Inductive Load IC = 600 A, VCE = 400 V,VGE = +15/−8 V,Rg.off = 12 �
Tvj = 25°CTvj = 150°CTvj = 175°C
−−−
85144151
−−−
ns
Eon Turn−On Switching Loss (Including Diode Reverse Recovery Loss)
IC = 600 A, VCE = 400 V,VGE = +15/−8 V, Ls = 22 nH, Rg.on = 4 �
di/dt = 4.5 A/ns,Tvj = 25°Cdi/dt = 3.9 A/ns,Tvj = 150°Cdi/dt = 3.6 A/ns,Tvj = 175°C
−
−
−
26
36
38
−
−
−
mJ
Eoff Turn−Off Switching Loss IC = 600 A, VCE = 400 V,VGE= +15/−8 V, Ls = 22 nH, Rg.off = 12 �
dv/dt = 2.7 V/ns,Tvj = 25°Cdv/dt = 1.9 V/ns,Tvj = 150°Cdv/dt = 1.9 V/ns,Tvj = 175°C
−
−
−
33
46
50
−
−
−
mJ
ESC Minimum Short Circuit EnergyWithstand
VGE = 15 V, VCC = 400 V Tvj = 25°CTvj = 175°C
94.5
−−
−−
J
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CHARACTERISTICS OF INVERSE DIODE (Tvj = 25°C, Unless Otherwise Specified)
Symbol Parameters Conditions Min Typ Max Unit
VF Diode Forward Voltage (Terminal)
IF = 600 A Tvj = 25°C − 1.70 1.95 V
Diode Forward Voltage (Chip) IF = 600 A Tvj = 25°CTvj = 150°CTvj = 175°C
−−−
1.601.551.50
1.85−−
IF = 820 A Tvj = 25°CTvj = 150°CTvj = 175°C
−−−
1.701.701.65
−−−
Err Reverse Recovery Energy IF = 600 A, VR = 400 V,VGE = −8 V, Rg.on = 4 �
di/dt = 4.5 A/ns,Tvj = 25°Cdi/dt = 3.9 A/ns,Tvj = 150°Cdi/dt = 3.6 A/ns,Tvj = 175°C
−
−
−
3
9
11
−
−
−
mJ
Qrr Recovered Charge IF = 600 A, VR = 400 V,VGE = −8 V,Rg.on = 4 �
di/dt = 4.5 A/ns,Tvj = 25°Cdi/dt = 3.9 A/ns,Tvj = 150°Cdi/dt = 3.6 A/ns,Tvj = 175°C
−
−
−
9
32
39
−
−
−
�C
Irr Peak Reverse Recovery Current
IF = 600 A, VR = 400 V,VGE = −8 V, Rg.on = 4 �
di/dt = 4.5 A/ns,Tvj = 25°Cdi/dt = 3.9 A/ns,Tvj = 150°Cdi/dt = 3.6 A/ns,Tvj = 175°C
−
−
−
133
246
282
−
−
−
A
NTC SENSOR CHARACTERISTICS (Tvj = 25°C, Unless Otherwise Specified)
Symbol Parameters Conditions Min Typ Max Unit
R25(Note 3)
Rated Resistance TC = 25°C − 5 − k�
�R/R Deviation of R100 TC = 100°C, R100 = 493 � 5 − 5 %
P25 Power Dissipation TC = 25°C − − 20 mW
B25/50 B−Value R = R25 exp [B25/50 (1/T−1/298)] − 3375 − K
B25/80 B−Value R = R25 exp [B25/80 (1/T−1/298)] − 3411 − K
B25/100 B−Value R = R25 exp [B25/100 (1/T−1/298)] − 3433 − K
3. Measured value at terminals.
THERMAL CHARACTERISTICS
Symbol Parameter Min Typ Max Unit
IGBT.Rth,J−F Rth, Junction to Fluid, 10 L/min, 65°C, 50/50 EGW − 0.11 0.13 °C/W
Diode.Rth,J−F Rth, Junction to Fluid, 10 L/min, 65°C, 50/50 EGW − 0.185 0.20 °C/W
ORDERING INFORMATION
Part Number Package Shipping
NVH820S75L4SPB SSDC33, 154.50x92.0 (SPB)(Pb−Free)
4 Units / Tray
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TYPICAL CHARACTERISTICS
Figure 2. IGBT Output Characteristic Figure 3. IGBT Output Characteristic
VCE (V)
2.61.81.41.00.60.20
200
400
600
800
1000
1200
1400
Figure 4. IGBT Transfer Characteristic Figure 5. IGBT Turn−off Losses vs. IC
VGE (V)
128640
200
400
600
800
1000
1200
1400
Figure 6. IGBT Turn−on Losses vs. IC Figure 7. EON vs. RG
IC (A)
7005004003002001000
10
20
30
50
60
I C (
A)
I C (
A)
E (
mJ)
VGE = 15 VTVj = 25°C
TVj = 175°C
TVj = 150°C
VGE = 9 V
VCE (V)
42100
200
400
600
800
1000
1200
1400
I C (
A)
VCE = 20 V
TVj = 150°C
VGE = 11 V
VGE = 13 V
VGE = 15 V
VGE = 17 V
IC (A)
400 500300 7002001000
10
20
30
40
50
E (
mJ)
60
RG (�)
86210
50
E (
mJ)
600
VGE = +15/−8 V,RGoff = 12 �, VCE = 400 V
40
600
VGE = +15/−8 V,RGon = 4 �, VCE = 400 V
20
30
40
VGE = +15/−8 V,IC = 600 A,VCE = 400 V
Eon, TVj = 175°C
Eon, TVj = 150°C
Eon, TVj = 25°C
1600 1600
1600
TVj = 25°CTVj = 175°C
TVj = 150°C
800
Eoff, TVj = 175°C
Eoff, TVj = 150°C
Eoff, TVj = 25°C
800 4
60
2.2 3
10
70
70
Eon, TVj = 175°C
Eon, TVj = 150°C
Eon, TVj = 25°C
10
VE−Trac� Direct Module NVH820S75L4SPB
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TYPICAL CHARACTERISTICS
Figure 8. EOFF vs. RG Figure 9. Gate Charge Characteristic
RG (�) QG (�C)
16141220
30
40
1.20.80.40−10
−5
0
10
15
Figure 10. Maximum Allowed VCE Figure 11. Reverse Bias Safe Operating Area
VCE (V)
80060040020000
200
800
1000
1200
1400
Figure 12. Capacitance Characteristic Figure 13. Diode Forward Characteristic
VCE (V)
50020010000.1
1
10
100
E (
mJ)
VG
E (
V)
I C (
A)
C (
nF)
VGE = +15/−8 V,IC = 600 A,VCE = 400 V
VCE = 400 V, IC = 600 A, Tvj = 25°C
VGE = 0 V, Tvj = 25°Cf = 1 MHz
400
18
50
5
QG
Tvj (°C)
VC
ES (
V)
600
ICES = 1 mA, Tvj ≤ 25°C,ICES = 30 mA, Tvj > 25°C
300 400
VF (F)
1.00.60.20
200
400
1400
I F (
A)
1.4 1.8 2.2
1000
VGE = +15/−8 V,RGoff = 12 �, Tvj = 175°C
Module
Chip
Cies
Coes
Cres
600
800
1200
Tvj = 25°CTvj = 175°C
Tvj = 150°C
60
20 1.6 2.0
1600
1800
1600
Eoff, TVj = 175°C
Eoff, TVj = 150°C
Eoff, TVj = 25°C
2.4
650
675
700
725
750
775
−40 20 80 140 200
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TYPICAL CHARACTERISTICS
Figure 14. Diode Switching Losses vs. RG Figure 15. Diode Switching Losses vs. IF
RG (�)
865320
2
4
8
10
Err
(m
J)
IF (A)
8005004003001000
6
12
14
Err
(m
J)
12
6
200
Err, Tvj = 175°C
Err, Tvj = 150°C
Err, Tvj = 25°C
RGon = 4 � VCE = 400 V
10
8
4
2
6004 7 700
VGE = +15/−8 V,IC = 600 A,VCE = 400 V
Err, Tvj = 175°C
Err, Tvj = 150°C
Err, Tvj = 25°C
10
Figure 16. IGBT Transient Thermal Impedance(Typ.)
Figure 17. Diode Transient Thermal Impedance(Typ.)
TIME (s)
1010.10.010.0010.01
1
Figure 18. IGBT, Thermal Resistance (Typ.) Figure 19. Diode, Thermal Resistance (Typ.)
QV (L/min)
1210640.100
0.104
0.106
0.112
0.120
Zth
(K
/W)
Rth
,J−F
(K
/W)
i: 1 2 3 4Rth [K/W]: 0.034 0.075 0.031 0.043�th [s]: 0.012 0.064 0.0008 0.639
Rth = f(QV), Tf = 65°C, 50/50 EGW,Ref. Cooler Assy.
TIME (s)
1010.10.010.0010.001
0.01
0.1
1
Zth
(K
/W)
0.1
QV (L/min)
1410840.178
0.182
0.196
0.198
Rth
,J−F
(K
/W)
Zth,j−f: IGBT
i: 1 2 3 4Rth [K/W]: 0.044 0.046 0.009 0.009�th [s]: 0.046 0.388 0.001 1.273
10 L/Min, Tf = 65°C, 50/50 EGW, Ref. Cooler Assy.
6
Zth: (K/W)
10 L/Min, Tf = 65°C, 50/50 EGW, Ref. Cooler Assy.
8
0.102
0.108
0.110
0.116
0.114
0.118
Rth = f(QV), Tf = 65°C, 50/50 EGW,Ref. Cooler Assy.
0.194
0.190
0.188
0.180
0.184
0.186
0.124
0.122
12
0.192
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TYPICAL CHARACTERISTICS
Figure 20. Pressure Drop in Cooling Circuit Figure 21. NTC Thermistor − TemperatureCharacteristic (Typical)
�p
(mba
r)
TC (°C)
12575500100
10K
100K
R (�
)
25
1K
100
QV (L/min)
9520
60
180
200
120
80
40
7 1511
100
160
�p = f(QV), 50/50 EGW,Ref. Cooler Assy.
140
Tf = 25°C
13
Tf = 65°C
VE−Trac is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SSDC33, 154.50x92.0 (SPB)CASE 183AB
ISSUE ADATE 05 DEC 2019
XXXXX = Specific Device CodeG = Pb−Free PackageAT = Assembly & Test Site CodeYYWW= Year and Work Week Code
*This information is generic. Please refer to device datasheet for actual part marking. Pb−Free indicator, “G” ormicrodot “ �”, may or may not be present. Some productsmay not follow the Generic Marking.
GENERICMARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXGATYYWW
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of others.
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PAGE 1 OF 2SSDC33, 154.50x92.0 (SPB)
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
SSDC33, 154.50x92.0 (SPB)CASE 183AB
ISSUE ADATE 05 DEC 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of others.
98AON10436HDOCUMENT NUMBER:
DESCRIPTION:
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PAGE 2 OF 2SSDC33, 154.50x92.0 (SPB)
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