nvh820s75l4spb - automotive 750 v, 820 a single side

© Semiconductor Components Industries, LLC, 2020

August, 2021 − Rev. 111 Publication Order Number:

NVH820S75L4SPB/D

Automotive 750 V, 820 ASingle Side Direct Cooling6-Pack Power Module

VE-Trac� Direct ModuleNVH820S75L4SPB

Product DescriptionThe NVH820S75L4SPB is a power module from the VE−Trac�

Direct family of highly integrated power modules with industrystandard footprints for Hybrid (HEV) and Electric Vehicle (EV)traction inverter application.

The module integrates six Field Stop 4 (FS4) 750 V Narrow MesaIGBTs in a 6−pack configuration, which excels in providing highcurrent density, while offering robust short circuit protection andincreased blocking voltage. Additionally, FS4 750 V Narrow MesaIGBTs show low power losses during lighter loads, which helps toimprove overall system efficiency in automotive applications.

For assembly ease and reliability, a new generation of press−fit pinsare integrated into the power module signal terminals. In addition, thepower module has an optimized pin−fin heatsink in the baseplate.

Features• Direct Cooling w/ Integrated Pin−fin Heatsink

• Ultra−low Stray Inductance

• Tvjmax = 175°C Continuous Operation

• Low VCESAT and Switching Losses

• Automotive Grade FS4 750 V Narrow Mesa IGBT

• Fast Recovery Diode Chip Technologies

• 4.2 kV Isolated DBC Substrate

• Easy to Integrate 6−pack Topology

• This Device is Pb−Free and is RoHS Compliant

Typical Applications• Hybrid and Electric Vehicle Traction Inverter

• High Power Converters

See detailed ordering and shipping information on page 5 ofthis data sheet.

ORDERING INFORMATION

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SSDC33, 154.50x92.0 (SPB)CASE 183AB

N3

P3T31 T32

3

E6

G6

C6

E5

G5

C5

N2

P2T22

2

E4

G4

C4

E3

G3

C3

N1

P1T12

1

E2

G2

C2

E1

G1

C1

T21T11

XXXXX = Specific Device CodeAT = Assembly & Test Site CodeYYWW= Year and Work Week Code

MARKING DIAGRAM

XXXXXXXXXXXXXXXXXXXXXXATYYWW

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VE−Trac� Direct Module NVH820S75L4SPB

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Pin Description

Figure 1. Pin Description

P1

N1

P2

N2

P3

N3

T11 T12

1

C1

G1

E1

C2

G2

E2

T21 T22

2

C3

G3

E3

C4

G4

E4

T31 T32

3

C5

G5

E5

C6

G6

E6

PIN FUNCTION DESCRIPTION

Pin # Pin Function Description

P1, P2, P3 Positive Power Terminals

N1, N2, N3 Negative Power Terminals

1 Phase 1 Output

2 Phase 2 Output

3 Phase 3 Output

G1−G6 IGBT Gate

E1−E6 IGBT Gate Return

C1−C6 Desat Detect/Collector Sense

T11, T12 Phase 1 Temperature Sensor Output



MaterialsDBC Substrate: Al2O3 isolated substrate, basic isolation,

and copper on both sidesTerminals: Copper + Tin electro−platingSignal Leads: Copper + Tin platingPin−fin Base plate: Copper + Ni plating

Flammability InformationThe module frame meets UL94V−0 flammability rating.



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MODULE CHARACTERISTICS (Tvj = 25°C, Unless Otherwise Specified)

Symbol Parameter Rating Unit

Tvj Operating Junction Temperature −40 to 175 °C

TSTG Storage Temperature −40 to 125 °C

VISO Isolation Voltage (DC, 0 Hz, 1 s) 4200 V

LsCE Stray Inductance 8 nH

RCC’+EE’ Module Lead Resistance, Terminals − Chip 0.75 m�

G Module Weight 700 g

CTI Comparative Tracking Index >200 −

dcreep Creepage: Terminal to HeatsinkTerminal to Terminal

9.09.0

mm

dclear Clearance: Terminal to HeatsinkTerminal to Terminal

4.54.5

mm

Symbol Parameters Conditions Min Typ Max Unit

�p Pressure Drop in Cooling Circuit 10 L/min, 65°C, 50/50 EGW − 95 − mbar

P (Note 1) Maximum Pressure in CoolingLoop (relative)

TBaseplate < 40°CTBaseplate > 40°C

−−

−−

2.52.0

bar

1. EPDM rubber 50 durometer ‘O’ ring used.

ABSOLUTE MAXIMUM RATINGS (Tvj = 25°C, Unless Otherwise Specified)

Symbol Parameter Rating Unit

IGBT

VCES Collector to Emitter Voltage 750 V

VGES Gate to Emitter Voltage ±20 V

ICN Implemented Collector Current 820 A

IC nom Continuous DC Collector Current, Tvj = 175°C, TF = 65°C, Ref. Heatsink 600 (Note 2) A

ICRM Pulsed Collector Current @ VGE = 15 V, tp =1 ms 1640 A

Ptot Total Power Dissipation Tvj = 175°C, TF = 65°C, Ref. Heatsink 1000 W

di/dt IGBT Maximum di/dt during turning−on of IGBT, Tvj = 25°CTvj = 150°C

77

A/ns

dv/dt IGBT Maximum dv/dt during turning−off of IGBT, Tvj = 25°CTvj = 150°C

1210

V/ns

Diode

VRRM Repetitive Peak Reverse Voltage 750 V

IFN Implemented Forward Current 820 A

IF Continuous Forward Current, Tvj = 175°C, TF = 65°C, Ref. Heatsink 400 (Note 2) A

IFRM Repetitive Peak Forward Current, tp = 1 ms 1640 A

I2t value Surge Current Capability, tp = 10 ms, Tvj = 150°CTvj = 175°C

1900016000

A2s

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.2. Verified by characterization/design, not by test.



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CHARACTERISTICS OF IGBT (Tvj = 25°C, Unless Otherwise Specified)


VCESAT Collector to Emitter SaturationVoltage (Terminal)

VGE = 15 V, IC = 600 A Tvj = 25°C − 1.30 1.55 V

Collector to Emitter SaturationVoltage (Chip)

VGE = 15 V, IC = 600 A Tvj = 25°CTvj = 150°CTvj = 175°C

−−−

1.251.371.40

1.50−−

VGE = 15 V, IC = 820 A Tvj = 25°CTvj = 150°CTvj = 175°C

−−−

1.401.591.63

−−−

ICES Collector to Emitter LeakageCurrent

VGE = 0, VCE = 750 V Tvj = 25°CTvj = 150°C

−−

−2.0

500−

�AmA

IGES Gate – Emitter Leakage Current

VCE = 0, VGE = ±20 V − − 300 nA

Vth Threshold Voltage VCE = VGE, IC = 90 mA 4.8 5.7 6.6 V

QG Total Gate Charge VGE= −8 to 15 V, VCE = 400 V − 2.3 − �C

RGint Internal Gate Resistance − 1.7 − �

Cies Input Capacitance VCE = 30 V, VGE = 0 V, f = 100 kHz − 60 − nF

Coes Output Capacitance VCE = 30 V, VGE = 0 V, f = 100 kHz − 1.90 − nF

Cres Reverse Transfer Capacitance

VCE = 30 V, VGE = 0 V, f = 100 kHz − 0.2 − nF

Td.on Turn On Delay, InductiveLoad

IC = 600 A, VCE = 400 V, VGE = +15/−8 V,Rg.on = 4 �

Tvj = 25°CTvj = 150°CTvj = 175°C

−−−

315320322

−−−

ns

Tr Rise Time, Inductive Load IC = 600 A, VCE = 400 V,VGE = +15/−8 V,Rg.on = 4 �

Tvj = 25°CTvj = 150°CTvj = 175°C

−−−

108127132

−−−

ns

Td.off Turn Off Delay, InductiveLoad

IC = 600 A, VCE = 400 V,VGE = +15/−8 V, Rg.off = 12 �

Tvj = 25°CTvj = 150°CTvj = 175°C

−−−

106311961203

−−−

ns

Tf Fall Time, Inductive Load IC = 600 A, VCE = 400 V,VGE = +15/−8 V,Rg.off = 12 �

Tvj = 25°CTvj = 150°CTvj = 175°C

−−−

85144151

−−−

ns

Eon Turn−On Switching Loss (Including Diode Reverse Recovery Loss)

IC = 600 A, VCE = 400 V,VGE = +15/−8 V, Ls = 22 nH, Rg.on = 4 �

di/dt = 4.5 A/ns,Tvj = 25°Cdi/dt = 3.9 A/ns,Tvj = 150°Cdi/dt = 3.6 A/ns,Tvj = 175°C

−

−

−

26

36

38

−

−

−

mJ

Eoff Turn−Off Switching Loss IC = 600 A, VCE = 400 V,VGE= +15/−8 V, Ls = 22 nH, Rg.off = 12 �

dv/dt = 2.7 V/ns,Tvj = 25°Cdv/dt = 1.9 V/ns,Tvj = 150°Cdv/dt = 1.9 V/ns,Tvj = 175°C

−

−

−

33

46

50

−

−

−

mJ

ESC Minimum Short Circuit EnergyWithstand

VGE = 15 V, VCC = 400 V Tvj = 25°CTvj = 175°C

94.5

−−

−−

J



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CHARACTERISTICS OF INVERSE DIODE (Tvj = 25°C, Unless Otherwise Specified)


VF Diode Forward Voltage (Terminal)

IF = 600 A Tvj = 25°C − 1.70 1.95 V

Diode Forward Voltage (Chip) IF = 600 A Tvj = 25°CTvj = 150°CTvj = 175°C

−−−

1.601.551.50

1.85−−

IF = 820 A Tvj = 25°CTvj = 150°CTvj = 175°C

−−−

1.701.701.65

−−−

Err Reverse Recovery Energy IF = 600 A, VR = 400 V,VGE = −8 V, Rg.on = 4 �


−

−

−

3

9

11

−

−

−

mJ

Qrr Recovered Charge IF = 600 A, VR = 400 V,VGE = −8 V,Rg.on = 4 �


−

−

−

9

32

39

−

−

−

�C

Irr Peak Reverse Recovery Current

IF = 600 A, VR = 400 V,VGE = −8 V, Rg.on = 4 �


−

−

−

133

246

282

−

−

−

A

NTC SENSOR CHARACTERISTICS (Tvj = 25°C, Unless Otherwise Specified)


R25(Note 3)

Rated Resistance TC = 25°C − 5 − k�

�R/R Deviation of R100 TC = 100°C, R100 = 493 � 5 − 5 %

P25 Power Dissipation TC = 25°C − − 20 mW

B25/50 B−Value R = R25 exp [B25/50 (1/T−1/298)] − 3375 − K



3. Measured value at terminals.

THERMAL CHARACTERISTICS

Symbol Parameter Min Typ Max Unit

IGBT.Rth,J−F Rth, Junction to Fluid, 10 L/min, 65°C, 50/50 EGW − 0.11 0.13 °C/W

Diode.Rth,J−F Rth, Junction to Fluid, 10 L/min, 65°C, 50/50 EGW − 0.185 0.20 °C/W

ORDERING INFORMATION

Part Number Package Shipping

NVH820S75L4SPB SSDC33, 154.50x92.0 (SPB)(Pb−Free)

4 Units / Tray



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TYPICAL CHARACTERISTICS

Figure 2. IGBT Output Characteristic Figure 3. IGBT Output Characteristic

VCE (V)

2.61.81.41.00.60.20

200

400

600

800

1000

1200

1400

Figure 4. IGBT Transfer Characteristic Figure 5. IGBT Turn−off Losses vs. IC

VGE (V)

128640

200

400

600

800

1000

1200

1400

Figure 6. IGBT Turn−on Losses vs. IC Figure 7. EON vs. RG

IC (A)

7005004003002001000

10

20

30

50

60

I C (

A)

I C (

A)

E (

mJ)

VGE = 15 VTVj = 25°C

TVj = 175°C

TVj = 150°C

VGE = 9 V

VCE (V)

42100

200

400

600

800

1000

1200

1400

I C (

A)

VCE = 20 V

TVj = 150°C

VGE = 11 V

VGE = 13 V

VGE = 15 V

VGE = 17 V

IC (A)

400 500300 7002001000

10

20

30

40

50

E (

mJ)

60

RG (�)

86210

50

E (

mJ)

600

VGE = +15/−8 V,RGoff = 12 �, VCE = 400 V

40

600

VGE = +15/−8 V,RGon = 4 �, VCE = 400 V

20

30

40

VGE = +15/−8 V,IC = 600 A,VCE = 400 V

Eon, TVj = 175°C

Eon, TVj = 150°C

Eon, TVj = 25°C

1600 1600

1600

TVj = 25°CTVj = 175°C

TVj = 150°C

800

Eoff, TVj = 175°C

Eoff, TVj = 150°C

Eoff, TVj = 25°C

800 4

60

2.2 3

10

70

70

Eon, TVj = 175°C

Eon, TVj = 150°C

Eon, TVj = 25°C

10



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Figure 8. EOFF vs. RG Figure 9. Gate Charge Characteristic

RG (�) QG (�C)

16141220

30

40

1.20.80.40−10

−5

0

10

15

Figure 10. Maximum Allowed VCE Figure 11. Reverse Bias Safe Operating Area

VCE (V)

80060040020000

200

800

1000

1200

1400

Figure 12. Capacitance Characteristic Figure 13. Diode Forward Characteristic

VCE (V)

50020010000.1

1

10

100

E (

mJ)

VG

E (

V)

I C (

A)

C (

nF)

VGE = +15/−8 V,IC = 600 A,VCE = 400 V

VCE = 400 V, IC = 600 A, Tvj = 25°C

VGE = 0 V, Tvj = 25°Cf = 1 MHz

400

18

50

5

QG

Tvj (°C)

VC

ES (

V)

600

ICES = 1 mA, Tvj ≤ 25°C,ICES = 30 mA, Tvj > 25°C

300 400

VF (F)

1.00.60.20

200

400

1400

I F (

A)

1.4 1.8 2.2

1000

VGE = +15/−8 V,RGoff = 12 �, Tvj = 175°C

Module

Chip

Cies

Coes

Cres

600

800

1200

Tvj = 25°CTvj = 175°C

Tvj = 150°C

60

20 1.6 2.0

1600

1800

1600

Eoff, TVj = 175°C

Eoff, TVj = 150°C

Eoff, TVj = 25°C

2.4

650

675

700

725

750

775

−40 20 80 140 200



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Figure 14. Diode Switching Losses vs. RG Figure 15. Diode Switching Losses vs. IF

RG (�)

865320

2

4

8

10

Err

(m

J)

IF (A)

8005004003001000

6

12

14

Err

(m

J)

12

6

200

Err, Tvj = 175°C

Err, Tvj = 150°C

Err, Tvj = 25°C

RGon = 4 � VCE = 400 V

10

8

4

2

6004 7 700

VGE = +15/−8 V,IC = 600 A,VCE = 400 V

Err, Tvj = 175°C

Err, Tvj = 150°C

Err, Tvj = 25°C

10

Figure 16. IGBT Transient Thermal Impedance(Typ.)

Figure 17. Diode Transient Thermal Impedance(Typ.)

TIME (s)

1010.10.010.0010.01

1

Figure 18. IGBT, Thermal Resistance (Typ.) Figure 19. Diode, Thermal Resistance (Typ.)

QV (L/min)

1210640.100

0.104

0.106

0.112

0.120

Zth

(K

/W)

Rth

,J−F

(K

/W)

i: 1 2 3 4Rth [K/W]: 0.034 0.075 0.031 0.043�th [s]: 0.012 0.064 0.0008 0.639

Rth = f(QV), Tf = 65°C, 50/50 EGW,Ref. Cooler Assy.

TIME (s)

1010.10.010.0010.001

0.01

0.1

1

Zth

(K

/W)

0.1

QV (L/min)

1410840.178

0.182

0.196

0.198

Rth

,J−F

(K

/W)

Zth,j−f: IGBT

i: 1 2 3 4Rth [K/W]: 0.044 0.046 0.009 0.009�th [s]: 0.046 0.388 0.001 1.273

10 L/Min, Tf = 65°C, 50/50 EGW, Ref. Cooler Assy.

6

Zth: (K/W)

10 L/Min, Tf = 65°C, 50/50 EGW, Ref. Cooler Assy.

8

0.102

0.108

0.110

0.116

0.114

0.118

Rth = f(QV), Tf = 65°C, 50/50 EGW,Ref. Cooler Assy.

0.194

0.190

0.188

0.180

0.184

0.186

0.124

0.122

12

0.192



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Figure 20. Pressure Drop in Cooling Circuit Figure 21. NTC Thermistor − TemperatureCharacteristic (Typical)

�p

(mba

r)

TC (°C)

12575500100

10K

100K

R (�

)

25

1K

100

QV (L/min)

9520

60

180

200

120

80

40

7 1511

100

160

�p = f(QV), 50/50 EGW,Ref. Cooler Assy.

140

Tf = 25°C

13

Tf = 65°C

VE−Trac is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.



ISSUE ADATE 05 DEC 2019

XXXXX = Specific Device CodeG = Pb−Free PackageAT = Assembly & Test Site CodeYYWW= Year and Work Week Code

*This information is generic. Please refer to device datasheet for actual part marking. Pb−Free indicator, “G” ormicrodot “ �”, may or may not be present. Some productsmay not follow the Generic Marking.

GENERICMARKING DIAGRAM*

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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ISSUE ADATE 05 DEC 2019

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of others.

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nvh820s75l4spb - automotive 750 v, 820 a single side

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