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π« Hamamatsu Photonics K.K. and its affiliates. All Rights Reserved. 1
MPPC & SPAD
Future of Photon Counting Detectors
Slawomir Piatek
New Jersey Institute of Technology &
Hamamatsu Photonics, Bridgewater, NJ, USA
10.1. 2019
2π« Hamamatsu Photonics K.K. and its affiliates. All Rights Reserved.
β Introduction
β Single-Photon Avalanche Photodiode (SPAD)
β Silicon Photomultiplier (SiPM)
β Concluding remarks
Index
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Introduction
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Terminology
PD β Photodiode
APD β Avalanche photodiode
SPAD β Single-photon avalanche photodiode
SiPM β Silicon photomultiplier
MPPC β Multi-pixel photon counter; another name for SiPM
PMT β Photomultiplier tube
The same
SPPC β Single-pixel photon counter; another name for SPAD The same
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Generic PN junction: modes of operation
πΌ
π
ππ΅π·
linear mode APD
operates in this region
PD operates in
this region
ββ
SPAD and SiPM
operate in this region
π
πΌ
Ge
ige
r re
gio
n
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PN junction devices
βπ
π
π
ππ΅πΌπ΄π
PD
βπ
π
APD
βπ
π
SPAD
1 πΎ β 1 pair 1πΎ β ~100 pairs 1πΎ β β pairs
ππ΅π·
π
πΌ ππ΅π·
π
πΌππ΅π·
π
πΌ
ππ΅πΌπ΄π ππ΅πΌπ΄π
π π
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Attributes of a photodiode
1. Detector of choice for sufficiently high input light level
2. Wide spectral coverage (from UV to IR) for a family of photodiodes
3. Inexpensive and easy to use
4. Low intrinsic noise
5. Can be used in arrays and available in modules
Si PDs InGaAS PDs PD arrays with
amplifier
PD module
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Attributes of an avalanche photodiode (linear mode)
1. Detector of choice for light levels too high for a PMT/SiPM but too low for a photodiode
2. Intrinsic gain up to ~100
3. Wide spectral coverage 200 ππ β 1700 ππ for a family of avalanche photodiodes
4. Can be used in arrays
5. Available as part of a module
Si APDs InGaAs APDs Si APD array APD module
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Single-Photon Avalanche Photodiode (SPAD)
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Operation of a SPAD
SPAD
photon
time
cu
rre
nt
avalanche starts here
Once triggered, the avalanche
is perpetual; however, the SPAD
is no longer sensitive to light.
Without quenching, SPAD operates as a light switch.
ππ΅πΌπ΄π > ππ΅π·
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Operation of a SPAD (passive quenching)
SPAD
ππ΅π·
steady state
transient
quench
recharge
π π must be large enough to ensure quenching.
quasi-stable βreadyβ
state
photon
π π
ππ΅πΌπ΄π
π π
πΌπππ΄π·
π π β« π π
ππππ΄π·ππ΅πΌπ΄π
ππ΅πΌπ΄ππ π
βπ = ππ΅πΌπ΄π β ππ΅π· (overvoltage)
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Operation of a SPAD (passive quenching)
π
VBD
SPAD
time
πΌ
Observed output current pulse
quenching occurs
around here
πΌπππ΄π·
ππππ΄π·
ON
OFF
ππ΅πΌπ΄πππ΅π·
Rise time ~π ππΆπ½ few ns
Fall time ~π ππΆπ½ tens of nsπ π~100π Ξ©
ππ΅πΌπ΄π > ππ΅π·
π π~100π πΞ©
π =ππππ₯π ππΆπ½
π=
ππ΅πΌπ΄π β ππ΅π· π ππΆπ½
π π π + π πβ
ππ΅πΌπ΄π β ππ΅π· πΆπ½π
=βππΆπ½π
(gain)
ππ΅πΌπ΄π β ππ΅π·
π π + π π
~πβπ‘/π ππΆπ½~ 1 β πβπ‘/π ππΆπ½
π‘π π‘πππ₯
ππππ₯
πΆπ½~100 fF
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Operation of a SPAD (passive quenching)
SPAD
photon
π π
ππ΅πΌπ΄π
π π
π π β« π π
time
quench
π~π ππΆπ½ (recovery characteristic time)
recovery
Voltage pulse on π π due to avalanche
ππ
10π β 100π of ππ
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Photon counting with SPAD
π π
ππ΅πΌπ΄π
π π
π£ π‘
time
π£ π‘
no light
time
π£ π‘
yes light
dark countsπΆ
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Photon counting with SPAD
π π
ππ΅πΌπ΄π
π π
π£ π‘
time
π£ π‘
Pulses with a duration
much shorter than the
recovery time.
π
π
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Photon counting with SPAD
π π
ππ΅πΌπ΄π
π π
π£ π‘
time
π£ π‘
Pulses with a duration
longer than the
recovery time.
π
π
π
π
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Photon counting with SPAD
π π
ππ΅πΌπ΄π
π π
π£ π‘
time
π£ π‘
DC
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Active quenching
Reference: βProgress in Quenching Circuits for Single Photon Avalanche Diodes,β Gallivanoni, A., Rech, I., & Ghioni, M., IEEE Transactions
on Nuclear Science, Vol. 57, No. 6, December 2010
π π
ππ΄ < 0
Pulse
generator
β
+ππ‘β
time
time
Ca
tho
de
vo
lta
ge
Dio
de
cu
rre
nt
hold-off time
avalanche
starts here
Basic concept of active
quenching. quenching
occurs here
comparator
π π β current sensing resistor (small)
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Photon Detection Efficiency
Ph
oto
n d
ete
ction
effic
ien
cy,
π
Wavelength, π
Photon detection efficiency is a probability that the incident photon is detected. It is a
function of wavelength and overvoltage.
π = π π, Ξπ
fixed Ξπ
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Photon Detection Efficiency
Ph
oto
n d
ete
ction
effic
ien
cy,
π
Overvoltage, βπ [π]
For a given wavelength, photon detection efficiency increases with overvoltage.
fixed π
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Dark count rates
Da
rk c
ou
nt ra
te π/π
Overvoltage, βπ [π]
Da
rk c
ou
nt ra
te π/π
Temperature β
Dark count rate depends on temperature and overvoltage. Typical values at room temperature and
recommended overvoltage are 10π β 100π π/π , depending on the device design.
fixed Ξπfixed π
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After-pulsing
time
photonlight-sensitive light-sensitive
time
photonlight-sensitive light-sensitive
normal
with after-pulsing
full recovery
full recovery
SPAD
SPAD
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Product example by Hamamatsu (C14463-050GD)
Photon counting module with SPAD
(SPPC)
wavelength ππ
Ph
oto
n d
ete
ction
effic
ien
cy %
No. of incident photons π/π N
o. o
f d
ete
cte
d p
ho
ton
s π/π
linearityPDE
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SPAD Array
1
2
3
4
5
6
7
8
9
1 2 3
4 5 6
7 8 9
Each element of the array (pixel) has its own quenching circuitry (passive or active).
Outputs
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SPAD Array; Crosstalk
1
2
3
4
5
6
7
8
9
1 2 3
4 5 6
7 8 9
Each element of the array (pixel) has its own quenching circuitry (passive or active).
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Product example by Hamamatsu (S15008-100NT-01)
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Product example by Hamamatsu (S15008-100NT-01)
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Comments on SPAD arrays
1. The array can be customized to specific userβs needs.
2. Hamamatsu is working on improving crosstalk.
3. Hamamatsu is working on higher resolution array (smaller pixels).
4. Hamamatsu is working on IR version of the array.
5. Hamamatsu will work with users on developing customized ASICs
6. Demos are available for evaluation.
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Importance of ASIC (example)
t = 0
time
timer
targetSPAD
laser
Puls
e e
mis
sio
nπ‘ = π
Ξπ‘ =2π
π
Measuring distance with a SPAD
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Importance of ASIC (example)
time
π‘ = 0 π‘ = πΞπ‘ =
2π
π
Histogram of trigger times
1. Multiple pulse illumination provides distance information to the target. The information comes
from a histogram of trigger times.
2. An ASIC producing such histogram (per pixel) is part of the sensor.
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Silicon Photomultiplier (SiPM)
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Naming conventions
SiPM β Silicon Photomultiplier
MPPC β Multi-Pixel Photon Counter
SSPM β Solid-State Photomultiplier
PMAD β Multi-Pixel Avalanche Photodiode
G-APD β Geiger Mode Avalanche Photodiode
MPGM APDs β Multi-Pixel Geiger-Mode Avalanche Photodiodes
Most-commonly-used names
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Structure
SiPM is an array of microcells
=π΄ππ·
p+
Ο
n+
p+
oxide
Single microcell
electrical equivalent circuit
of a single microcell
Sid
e v
iew
Top v
iew
π π
Also known as multi-pixel photon counter (MPPC)
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Structure
...
Anode
Cathode
single microcell
APD
π π
All of the microcells are connected in parallel.
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Example of models
S13360-6050VE
surface mount, 6Γ6 mm2,
14,555, 50Γ50 ΞΌm2
S13360-3050DG
metal can, TE
cooled, 3Γ3 mm2,
3,600, 50Γ50 ΞΌm2
S13360-1325CS
ceramic, 1.3Γ1.3 mm2,
2,668, 25Γ25 ΞΌm2
surface mount, 1.3Γ1.3
mm2, 285, 75Γ75 ΞΌm2
S13360-1375PE
DG β metal can
CS β ceramic
PE β surface mount
VE β 4-side buttable (best for arrays)
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Operation
ππ΅πΌπ΄π > ππ΅π·
π π
time
π£1 π£2
βπ
βπ
π1π2
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Anatomy of a pulse
time [ns]
Am
plit
ude [m
V]
Fast component
Slow component
β The π πΆ time constant of the slow component depends on microcell
size (all else being equal)
β The recovery time π‘π β 5 Γ the π πΆ time constant
β π‘π is on the order of 10s to 100s of ns but in practical situations it is
also a function of the detection bandwidth
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Crosstalk
Primary discharge can trigger a secondary
discharge in neighboring microcells. This is
crosstalk.
time
Arb
.
2 p.e. crosstalk event
Crosstalk probability depends on overvoltage.
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Temperature compensation
πΎ
π΄
Temperature sensor
Control unit
Variable power supply
Example of SiPM (MPPC) module
with temperature compensation
ππ΅π· π = ππ΅π· π0 + π½ π β π0(breakdown voltage depends
on temperature)
The role of the control unit is to adjust ππ΅πΌπ΄π so that the overvoltage Ξπ remains
constant (and thus gain) as temperature changes.
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Product example by Hamamatsu (S13360, 50 ππ pitch)
Ga
in
Cro
ssta
lk p
rob
ab
ility,
ph
oto
n d
ete
ctio
n e
fficie
ncy %
Overvoltage π
Ph
oto
n d
ete
ction
effic
ien
cy %
Wavelength ππ
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Linearity and dynamic range (πΏ illumination)
ππ βAverage number of fired ΞΌ-cells
In the limit of πΏ βillumination, dynamic range and linearity depend on the number of microcells.
ππ‘ β Number of microcells
ππΎ β Number of photons in a pulse
Ideally linear
From Grodzicka et al. 2015
Hamamatsu S10362-33-25C
& S10985-025C
solid lines fits to
the equation
Number of potentially detectable photons
ππ
ππ = ππ‘ 1 β πβππΎβππ·πΈ/ππ‘
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Linearity and dynamic range (finite-pulse illumination)
For a given number of photons in a pulse, the number of effective fired microcells increases
with the pulse duration.
ππ β Pulse duration
π‘π β Recovery time
Number of potentially detectable photons
3,600 microcells
3 Γ 3 ππ2
From Grodzicka et al. 2015
ππ
ππ = ππ‘πππ‘π
1 β ππ₯πβππΎ β ππ·πΈ
πππ‘π
ππ‘
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Linearity and dynamic range (DC)
Incident light level π
Outp
ut
curr
ent π΄ For some SiPMs Hamamatsu provides a linearity plot for DC
illumination. This plot can be transcribed from π = 850 ππ to
any other wavelength.
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Modes of operation
time
incid
ent lig
ht le
vel
(photon counting)
(analog)
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Analog
ππβ = ππ 1 + πππ‘ππ·πΈ β π β π
βπ
β
+
π£π
π π
πΆπΉ
ππβ
ππ΅
π π
π=
ππβπ π
πππ2 π π
2 + ππ·π2 π π
2 +4ππΞππ π
π π2
πππ2 = 2πππβππΉΞπ
ππ·π2 = 2πππ·ππΉΞπ
(signal photon shot noise)
(dark current shot noise)
ππ½2 =
4ππΞπ
π π(Johnson noise of the feedback resistor)
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Photon counting
LLD
ULD
Time
Time
preamplifierSiPM amplifier discriminator pulse shaper counter
1,2, β¦
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Photon counting
π
π=
ππ πππ₯π
ππ + 2 ππ΅ + ππ·
πππ₯π β measurement time
ππ = ππ‘ππ‘ β ππ΅ + ππ·
ππ‘ππ‘ β number of counts per unit time due to βscienceβ light, background light, and dark counts
ππ΅ β number of counts per unit time due to background light
ππ· β number of counts per unit time due to dark current
All rates are measured with the same exposure time πππ₯π
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Modes of operation
Outp
ut c
urre
nt π΄
Num
ber
of
dete
cte
d p
hoto
ns π/π
Number of incident photons π/π
Input light power π
Minimum detection limit (MDL) can be lowered by cooling and limiting the detection bandwidth.
3Γ3 mm2, 50 ΞΌm
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SiPM imaging array, product example by Hamamatsu
S15013-0125NP-01
2D MPPC photon counting image sensor
This array can be used for imaging and for ToF distance measurement (e.g., in flash LiDAR).
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SiPM imaging array, product example by Hamamatsu
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SiPM imaging array, product example by Hamamatsu
Demo units, together with evaluation and interface boards, are available to potential users.
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Future Applications for SPAD Arrays
Quantum Technology β Quantum Key Distribution
Brain Activity Monitoring
Solid State Flash LiDAR
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Closing remarks
1. Photon counting can be a preferred detection technique when the incident light level is low.
2. SPAD and SiPM are well-suited for photon counting.
3. SPAD and SiPM image sensors are being developed.
4. Research and development continues to extend the detection into the IR regime.
5. Integration of ASICs with the SPAD or SiPM imagers is the most cost-effective approach.
Hamamatsu provides support and will work with individual customers to provide solutions.
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Thank you
Thank you for listening.
Contact information:
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