marta baselga , colin parker & hartmut sadrozinski scipp, uc santa cruz

Strips: p+ implant responsible for charge multiplication covers only

part of the strip.

Investigate extension of p+ to cover the entire sensor and topush it

deeper into the bulkMarta Baselga, Colin Parker & Hartmut Sadrozinski

SCIPP, UC Santa Cruz

Strip detectorsPitch p=80 mm

Strip w [mm] Metal [mm] P-implant [mm]

w/p P-implant/pitch

AC1 24 20 6 0.3 7.5%

AC2 24 24 6 0.3 7.5%

AC3 24 28 6 0.3 7.5%

AC4 48 44 30 0.6 37.5%

AC5 48 48 30 0.6 37.5%

AC6 48 52 30 0.6 37.5%

AC7 62 58 44 0.775 55%

AC8 62 62 44 0.775 55%

AC9 62 66 44 0.775 55%

AC10/AC11/DC

32 40 14 0.4 17.5%

Low resistivity substrate wafer

10mm

525mm

Pitch=80mm

Pitch=80mm

285mm

Epitaxial wafer

Float Zone

Pitch 80um

AC3

AC6

AC9

24mm

48mm

62mm

pstop pstopn++ P+ multiplication implant

REGULAR STRIPS AC6

Regular Strips(AC 6 FZ Deep annealing)

Electric field of regular strips @1000V(AC 6 FZ Deep annealing)

IV and CV for regular strips(AC 6 FZ Deep annealing)

0 200 400 600 800 1000 1200

-2.00E-12

0.00E+00

2.00E-12

4.00E-12

6.00E-12

8.00E-12

1.00E-11

1.20E-11

IV regular strip

V [V]

I [A]

0 100 200 300 400 500 600 700 800 900 10000.00E+00

2.00E+31

4.00E+31

6.00E+31

8.00E+31

1.00E+32

1.20E+32

1.40E+32

CV regular strip

V [V]

1/C^

2 [1

/F^2

]

NEW STRIPS

Doping boron peak 1e15cm^-3 boron at 2um

New strips (boron at 2um from the surface) doping boron 1e15cm^-3

New strips electric field @1000V doping boron 1e15cm^-3 @2um

IV and CV for strips with boron @ 2umboron doping 1e15cm^-3

0 200 400 600 800 10000.00E+002.00E+314.00E+316.00E+318.00E+311.00E+321.20E+321.40E+32

CV boron 1e15 @ 2um deep

V [V]1/

C^2

[1/F

^2]

0100

200300

400500

600700

800900

10000.00E+005.00E-121.00E-111.50E-112.00E-11

IV boron 1e15@2um deep

V [V]

I [A]

NEW STRIPS

Doping boron peak 1e15cm^-3 at 5um deep

New strips (boron at 5um from the surface) doping boron 1e15cm^-3

New strips electric field @1000V doping boron 1e15cm^-3

IV and CV for strips with boron @ 5umboron doping 1e15cm^-3

0100

200300

400500

600700

800900

10000.00E+00

5.00E+31

1.00E+32

1.50E+32

CV boron dose 1e15cm^-3

V [V]

1/C^

2 [1

/F^2

]

0100

200300

400500

600700

800900

10000.00E+005.00E-121.00E-111.50E-112.00E-11

IV boron doses 1e15cm^-3

V [V]

1/C^

2 [1

/F^2

]