marta baselga , colin parker & hartmut sadrozinski scipp, uc santa cruz
DESCRIPTION
Strips : p+ implant responsible for charge multiplication covers only part of the strip . Investigate extension of p+ to cover the entire sensor and topush it deeper into the bulk. Marta Baselga , Colin Parker & Hartmut Sadrozinski SCIPP, UC Santa Cruz. Strip detectors Pitch p=80 m m. - PowerPoint PPT PresentationTRANSCRIPT
Strips: p+ implant responsible for charge multiplication covers only
part of the strip.
Investigate extension of p+ to cover the entire sensor and topush it
deeper into the bulkMarta Baselga, Colin Parker & Hartmut Sadrozinski
SCIPP, UC Santa Cruz
Strip detectorsPitch p=80 mm
Strip w [mm] Metal [mm] P-implant [mm]
w/p P-implant/pitch
AC1 24 20 6 0.3 7.5%
AC2 24 24 6 0.3 7.5%
AC3 24 28 6 0.3 7.5%
AC4 48 44 30 0.6 37.5%
AC5 48 48 30 0.6 37.5%
AC6 48 52 30 0.6 37.5%
AC7 62 58 44 0.775 55%
AC8 62 62 44 0.775 55%
AC9 62 66 44 0.775 55%
AC10/AC11/DC
32 40 14 0.4 17.5%
Low resistivity substrate wafer
10mm
525mm
Pitch=80mm
Pitch=80mm
285mm
Epitaxial wafer
Float Zone
Pitch 80um
AC3
AC6
AC9
24mm
48mm
62mm
pstop pstopn++ P+ multiplication implant
REGULAR STRIPS AC6
Regular Strips(AC 6 FZ Deep annealing)
Electric field of regular strips @1000V(AC 6 FZ Deep annealing)
IV and CV for regular strips(AC 6 FZ Deep annealing)
0 200 400 600 800 1000 1200
-2.00E-12
0.00E+00
2.00E-12
4.00E-12
6.00E-12
8.00E-12
1.00E-11
1.20E-11
IV regular strip
V [V]
I [A]
0 100 200 300 400 500 600 700 800 900 10000.00E+00
2.00E+31
4.00E+31
6.00E+31
8.00E+31
1.00E+32
1.20E+32
1.40E+32
CV regular strip
V [V]
1/C^
2 [1
/F^2
]
NEW STRIPS
Doping boron peak 1e15cm^-3 boron at 2um
New strips (boron at 2um from the surface) doping boron 1e15cm^-3
New strips electric field @1000V doping boron 1e15cm^-3 @2um
IV and CV for strips with boron @ 2umboron doping 1e15cm^-3
0 200 400 600 800 10000.00E+002.00E+314.00E+316.00E+318.00E+311.00E+321.20E+321.40E+32
CV boron 1e15 @ 2um deep
V [V]1/
C^2
[1/F
^2]
0100
200300
400500
600700
800900
10000.00E+005.00E-121.00E-111.50E-112.00E-11
IV boron 1e15@2um deep
V [V]
I [A]
NEW STRIPS
Doping boron peak 1e15cm^-3 at 5um deep
New strips (boron at 5um from the surface) doping boron 1e15cm^-3
New strips electric field @1000V doping boron 1e15cm^-3
IV and CV for strips with boron @ 5umboron doping 1e15cm^-3
0100
200300
400500
600700
800900
10000.00E+00
5.00E+31
1.00E+32
1.50E+32
CV boron dose 1e15cm^-3
V [V]
1/C^
2 [1
/F^2
]
0100
200300
400500
600700
800900
10000.00E+005.00E-121.00E-111.50E-112.00E-11
IV boron doses 1e15cm^-3
V [V]
1/C^
2 [1
/F^2
]