high-resolution rbs system (hrbs-v500 hrbs1000)€¦ · ・ examples of high-resolution rbs ・...

KOBE STEEL, LTD．Machinery & Engineering Company

Advanced Product & Technologies Dept.

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High-Resolution RBS System(HRBS-V500、HRBS1000)

・ History for RBS Equipment・ Hardware of HRBS-V500・ Principle of RBS・ Principle of High-Resolution RBS・ Examples of High-Resolution RBS・ Principle & Examples of High-Resolution ERDA・ Principle of PIXE・ Comparison of instrumentation

Outline

History for RBS Equipment2/15

He+

He+

0 100 200 300 400 500

1

10

100

1000

10000

channel

Yield

0 100 200 300 400 500

1

10

100

1000

10000

channel

Yield

0 100 200 300 400 500

1

10

100

1000

10000

channel

Yield

Si

Si Au

Si Au Si

He+Si

Si

Si

Au

Au

Sample1

Sample2

Sample3

Principle of RBS4/15

Comparison between conventional ERDA & HERDA

1MeV He+ → DLCmikro-i

500keV N+ → DLCHRBS500

Depth resolution < 0.2nm

Hydrogen depth profile in thin film was CLEARLY measured!!

Conventional ERDA High Resolution ERDA

Comparison by DLC(Diamond like Carbon) spectrumbetween conventional ERDA & HERDA

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Principle of PIXE(Particle Induced X-ray Emission)

When Ion collides with atom, it radiates charasteristic X-ray which is unique in each element.

By detecting this X-ray, it turns out what elements and how many elements are included.

The feature of PIXE is high detection sensivity which is about ppm order.

L-Xray

K-Xray

Ion

Electron

K L

M

K

L

M

βα

β α

β

α

Lα

Lβ

Lγ

MKα

Kβ

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Principle SIMS AES TEM STM XRRHRBS 500 Old RBS

Method Double Semiconduc Cross Scanning X Ray/Feature focussing tor Section Tunnel Reflection

magnet&MCP detector electronProbe 500keV He 1Mev He Cs/O ion electron electron needle High Power

X Ray

X線反射率

干渉振動

non-destructive ○ ○ × × × ◎ ◎

Depthresolution

0.2～0.3nm 10nm 5nm 2nm 0.01nm × 2～10nm

Composition ◎ ◎ ○ △ △ × ×

Sensitivity 1% 0.50% 0.0001% 0.50% Few % Few % Few %

Reliability ◎ ◎ △ △ △～☆ ○ △

User-friendly ○ ○ △ ○ △ ○ ○

Simplicity ofuse

Attention isneeded forsurfacetreatment

Sensivityadjustment isneeded

Charge upmeasure isneeded

Preparation ofsample isneeded

Attention isneeded forsurfacetreatment

Augerelectron

Transmissionelectron

Tunnelcurrent

RBS

DetectionParticle

Scattered ionSecondaryion

Comparison of instrumentation(evaluation of thin film)15/15