ee 3401 electronics homework 4
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EE 3401 Electronics Homework #4
Read Chapter 3.
Section 3.1 MOSFET
Problem 3.1
a) Calculate the drain current in an NMOS transistor with parameters VTN = 0.4 V, kn’ =
120 µA/V2, W = 10 µm, L = 0.8 µm, and with applied voltages of VDS = 0.1 V and
(i) VGS = 0 V
(ii) VGS = 1 V
b) Repeat part (a) for VDS = 4 V.
Problem 3.3 The transistor characteristics iD versus VDS for an NMOS device are shown in
Figure P3.3.
a) Is this an enhancement-mode or depletion-mode device?
Problem 3.4 For an n-channel depletion-mode MOSFET, the parameters are VTN = -2.5 V and Kn
= 1.1 mA/V2.
a) Determine ID for VGS = 0; and
(i) VDS = 0.5 V
(ii) VDS = 2.5 V
(iii) VDS = 5 V
b) Repeat part (a) for VGS = 2 V.
Problem 3.5 The threshold voltage of each transistor in Figure P3.5 is VTN = 0.4 V. Determine
the region of operation of the transistor in each circuit.
Problem 3.6 The threshold voltage of each transistor in Figure P3.6 is VTP = -0.4 V. Determine
the region of operation of the transistor in each circuit.
Problem 3.9 An n-channel enhancement-mode MOSFET has parameters VTN = 0.4 V, W = 20
µm, L = 0.8 µm, tox = 200x10-8 cm, µn = 650 cm2/V, and oxide permittivity of 3.9 x 3.38 x 10-14
F/cm.
a) Calculate the conduction parameter Kn
b) Determine the drain current when VGS = VDS = 2 V
c) With VGS = 2 V, what value of VDS puts the device at the edge of saturation?
Problem 3.17 Calculate the drain current in a PMOS transistor with parameters VTP = -0.5 V, kp’
= 50 µA/V2, W = 12 µm, L = 0.8 µm, and with applied voltages of VSG = 2 V and
(i) VSD = 0.2 V
(ii) VSD = 0.8 V
(iii) VSD = 1.2 V
(iv) VSD = 2.2 V
(v) VSD = 3.2 V
Problem 3.20 For an NMOS enhancement-mode transistor, the parameters are: VTN = 1.2 V, Kn
= 0.2 mA//V2, and λ = 0.01 V-1. Calculate the output resistance ro for VGS = 2.0 V and for VGS =
4.0 V. What is the value of VA?
Section 3.2 Transistor DC analysis
Problem 3.26 In the circuit in Figure P3.26, the transistor parameters are VTN = 0.8 V and Kn =
0.5 mA/V2. Calculate VGS, ID, and VDS.
Problem 3.30 Consider the circuit in Figure P3.30. The transistor parameters are VTP = - 0.8 V
and Kp = 0.5 mA/V2. Determine ID, VSG, and VSD.
Problem 3.31 For the circuit in Figure P3.31, the transistor parameters are VTP = - 0.8 V and Kp =
200 µA/V2. Determine VS and VSD.
Problem 3.34 The transistor parameters for the transistor in Figure P3.34 are VTN = 0.4 V, kn’ =
120 µA/V2, and W/L = 50.
a) Determine VGS such that ID = 0.35 mA
b) Determine VDS and VDS(sat)
Problem 3.37 The parameters of the transistors in Figures P3.37
(a) and (b) are Kn = 0.5 mA/V2, VTN = 1.2 V, and λ = 0.
Determine VGS and VDS for each transistor when
(i) IQ = 50 µA
(ii) IQ = 1 mA
Problem 3.38 For the circuit in Figure P3.38, the transistor parameters are VTN = 0.6 V and Kn =
200 µA/V2. Determine VS and VD.
Section 3.3 MOSFET Switch and Amplifier
Problem 3.50 Consider the circuit in Figure P3.50. The circuit parameters are VDD = 3 V and RD
= 30 kΩ. The transistor parameters are VTN = 0.4 V and kn’ = 120 µA/V2.
a) Determine the transistor width-to-length ratio such that VO = 0.08 V when VI = 2.6 V
b) Repeat part a) for VI = 3 V.
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