DISTINGUISHED GUEST

Professor Leon Brillouin, France and U. S. A.

PARTICIPANTS

Alfano, R., General Telephone and Electronics Laboratories, U. S. A. Anastassakis, E., University of Pennsylvania, U. S. A. Anderson, C. H., R. C. A. Laboratories, U. S. A. Ashkin, M., Westinghouse Research Laboratories, U. S. A. Balkanski, M., Faculte des Sciences de Paris, France Bendow, B., New York University, U. S. A. Benedek, George B., Massachusetts Institute of Technology, U. S. A. Benedek, Giorgio, Instituto di .¥isica dell/Universita, Italy Berge, P., Commissariat a YEnergie Atomique, France Birnboim, N. H., Rensselaer Polytechnic Institute, U. S. A. Birman, Joseph L., New York University, U. S. A. Bobb, L. C., Frankford Arsenal, U. S. A. Boghosian, C., United States Army Research Office (Durham), U. S. A. Boon, J. P., Free University of Brussels, Belgium Brafman, 0., University of Rhode Island, U. S. A. Bray, R., Purdue University, U. S. A. Brody, E., The Johns Hopkins University, U. S; A. Brueck, S., Massachusetts Institute of Technology, Lincoln Laboratory, U. S. A. Bruun, M., Technical University of Denmark, Denmark Brya, W. J., Bell Telephone Laboratories, U. S. A. Bucci, C., University of Parma, Italy Buchenauer, C. J., Cornell University, U. S. A. Burns, G., IBM Research Laboratory (Yorktown Heights), U. S. A. Burstein, E., University of Pennsylvania, U. S. A. Cahill, K. E., National Bureau of Standards, U. S. A. Callender, R., Harvard University, U. S. A. Carleton, H. R., State University of New York (Stony Brook), U. S. A. Chang, R. K., Yale University, U. S. A. Chen, S. H., Harvard University, U. S. A. Chinn, S., Massachusetts Institute of Technology, Lincoln Laboratory, U. S. A. Chirico, S., University of Palermo, Italy Cohen, E., Bell Telephone Laboratories, U. S. A. Cole, T., Ford Motor Company, U. S. A. Coleau, H., Commissariat a fEnergie Atomique, France Comly, J., General Electric Research Laboratory, U. S. A. Courtens, E., IBM Research Laboratory, Switzerland Crooker, P. P., Massachusetts Institute of Technology, U. S. A. Cummins, H. Z., The Johns Hopkins University, U. S. A. Damen, T. C., Bell Telephone LaboratorLes, U. S. A. Da Silva, E., Societe de Conversion des Energies, France De Wames, R. E., North American Rockwell Corp., U. S. A. Di Domenico, M., Jr., Bell Telephone Laboratories, U. S. A. Dietz, R., Bell Telephone Laboratories, U. S. A. Dolino, G., Domaine Universitaire, France Dransfeld, K., Technischen Hochschule (Munich), Germany Durand, G., Universite de PariS, France

749

750

Enz, C. P., Universite de Geneve, Switzerland Feldman, D. W., Westinghouse Research Laboratories, U. S. A. Fenner, W. R., University of nlinois, U. S. A. Ferraro, J. R., Argonne National Laboratories, U. S. A. Fleury, P. J., Bell Telephone Laboratories, U. S. A. Ford, N. C., University of Massachusetts, U. S. A. Freedman, S. J., Polytechnic Institute of Brooklyn, U. S. A. Freund, I., Bell Telephone Laboratories, U. S. A. Friedman, E. A., Stevens Institute of Technology, U. S. A. Fritz, B., University of Stuttgart, Germany Gammon, R. W., Catholic University, U. S. A. Ganesan, S., City College (New York), U. S. A. Ganguly, A. K., General Telephone and Electronics Laboratories, U. S. A. Gayles, J. N., IBM Research Laboratory (San Jose), U. S. A. Gerlach, J., University of Stuttgart, Germany Geschwind, S., Bell Telephone Laboratories, U. S. A. Giordmaine, J. A., Bell Telephone Laboratories, U. S. A. Goldstein, B., Fairleigh Dickinson University, U. S. A. Green, M. S., National Bureau of Standards, U. S. A. Griffin, A., University of Toronto, Canada Grob, K., Padagogische Hochschule (Ludwigsburg), Germany Gunthard, H. H., Eidgenossische Technische Hochschule (Zurich), Switzerland Haas, M., Naval Research Laboratory, U. S. A. Hacker, H., Universitat Munchen, Germany Haidemenakis, E., Paris, France Halley, J. W., University of California (Berkeley), U. S. A. Hamilton, D. C., Massachusetts Institute of Technology, U. S. A. Harbeke, G., R. C. A. Laboratories, Switzerland Hardy, J. R., University of Nebraska, U. S. A. Hart, T., Massachusetts Institute of Technology, U. S. A. Hartmann, H., New York University, U. S. A. Henry, C. H., Bell Telephone Laboratories, U. S. A. Henry, D. L., The Johns Hopkins University, U. S. A. Henry, D. L., Bell Telephone Laboratories, U. S. A. Hexter, R. M., Carnegie-Mellon University, U. S. A. Hope, L. L., General Telephone and Electronics Laboratory, U. S. A. Hopfield, J., Princeton University, U. S. A. Huang, J. S., Cornell University, U. S. A. Huber, D. L., University of Wisconsin, U. S. A. Imry, Y., Cornell University, U. S. A. Jacucci, G., University of Rome, Italy Jha, S. S., Harvard University, U. S. A. Johnson, F. A., Radar Research Establishment Laboratory, England Kahane, A., Faculte des Sciences de Grenoble, France Kaminow, I., Bell Telephone Laboratories, U. S. A. Karo, A. M., Lawrence Radiation Laboratory, U. S. A. Kashnow, R., Natick Laboratory, U. S. A. Katyl~ R. H., Massachusetts Institute of Technology, U. S. A. Kiel, A., Bell Telephone Laboratories, U. S. A. Klein, M. V., University of IllinOiS, U. S. A. Klein, R., R. C. A. Laboratories, U. S. A. Koenig, J. L., Case Western Reserve University, U. S. A. Koningstein, J. A., Carleton University, Canada Korenman~ V., University of Maryland, U. S. A.

Krauzman, M., Faculte des Sciences de Paris, France Kravitz, L. C., General Electric Company, U. S. A. Krishnan, R. S., Indian Institute of Science, India Kruer, M., Catholic University of America, U. S. A. Kurtz, S. K., Bell Telephone Laboratories, U. S. A. Lacina, W., Harvard University, U. S. A. Lalor, E., University of Rochester, U. S. A. Laubereau, A., Technische Hochschule (Munich), Germany Lajzerowicz, J., Faculte.des Sciences de Grenoble, France Langer, D. W., Wright Patterson Air Force Base, . U. S. A. Langley, K. H., University of Massachusetts, U. S. A. Lastovka, J. B., Massachusetts Institute of Technology, U. S. A. Lax, B., Mat;sachusetts Institute of Technology, U. S. A. Lazay, F. D., Massachusetts Institute of Technology, U. S. A. Leigh, R. S., University of Reading, England Leite, R. C. C., Bell Telephone Laboratories, U. S. A. Leonard, D. A., Avco Everett Research Laboratory, U. S. A. Lin-Chung, P. J., Naval Research Laboratory, U. S. A. Lippmann, B., New York University, U.S.A. Litster, J. D., Massachusetts Institute of Technology, U. S. A. Lockwood, D. J., University of Canterbury, New Zealand Loebner, E. E., Hewlett-Packard Company, U. S. A. Logothetis, E. M., Ford Motor Company, U. S. A. Loudon, R., University of Essex, England Low, W., Hebrew University, Israel Lowndes, R. P., Massachusetts Institute of Technology, U. S. A. Macrakis, M. S., NASA Electronics Research Center, U. S. A. Magiros, D. G., General Electric Company, U. S. A. Marcuvitz, N., New York University, U. S. A. Martinke, T. L., Hercules Research Center, U. S. A. Mavroyannis, C. A., National Research Council of Canada, Canada May, A. D., University of Toronto, Canada McTague, J. P., North American Rockwell Corp., U. S. A.

751

McWhorter, A. L., Massachusetts Institute of Technology, Lincoln Laboratory, U. S. A. Miller, S. A., Corona Laboratories, U. S. A. Mills, D. L., University of Calif~rnia, U. S. A. Mireille, A., Commissariat a YEnergie Atomique, France Moch, P., Faculte des Sciences de PariS, France Mollow, B. R., Brandeis University, U. S. A. Mon, J. P., Faculte des Sciences de PariS, France Montgomery, P., Jr., University of nlinois, U. S. A. Mooradian, A., Massachusetts Institute of Technology, Lincoln Laboratory, U. S. A. Moriya, T., University of Tokyo, Japan Mortensen, O. S., University of Copenhagen, Denmark Mountain, D., National Bureau of Standards, U. S. A. Mulazzi, E., Universita di Fisica Milano, Italy Muldawer, L., Temple University, U. S. A. Nilsen, W. G., Bell Telephone Laboratories, U. S. A. Nordland, W. A., Jr., Bell Telephone Laboratories, U. S. A. Nusimovici, M. Faculte des Sciences de PariS, France O'Brien, R. J., Fordham University, U. S. A. Ockman, N., General Telephone and Electronic Laboratory, U. S. A. Oseroff, A., Harvard University, U. S. A.

752

O'Shea, D. C., The Johns Hopkins University, U. S. A. Page, J. B., Jr., Cornell University, U. S. A. Papon, P., Rutgers-The State University (New Jersey), U. S. A. Parker, J. H., Jr., Westinghouse Research Laboratories, U. S. A. Parsons, J. L., Ford Motor Company, U. S. A. Perry, C. H., Massachusetts Institute of Technology, U. S. A. Per shan, P., Harvard University, U. S. A. Pfeuty, P., Faculte des Sciences de PariS, France Pickart, S. J., National Bureau of Standards, U. S. A. Pike, E. R., Royal Radar Establishment, England Pine, A. S., Massachusetts Institute of Technology, U. S. A. Pinczuk, A., University of Pennsylvania, U. S. A. Platz man , P. S., Bell Telephone Laboratories, U. S. A. Polucci, A. J., Duke University, U. S. A. Porto, S. P. S., University of Southern California, U. S. A. Ralston, J., Yale University, U. S. A. Ramdas, A. K., Purdue University, U. S. A. Rast, H. E., Corona Laboratories, U. S. A. Rebane, K. K., Tartu Academy of Sciences of the E. S. S. R., U. S. S. R. Reese, R. L., The Johns Hopkins University, U. S. A. Rimai, L., Ford Motor Company, U. S. A. Riseberg, L. A., Bell Telephone Laboratories, U. S. A. Rosasco, G. J., Fordham University, U. S. A. Rowe, I., Office of Naval Research, U. S. A. Ruppin, R., Israel Atomic Energy Laboratory, Israel Russell, J. P., R. C. A. Laboratories, Switzerland Scott, J. F., Bell Telephone Laboratories, U. S. A. Schroder, U., New York University, U. S. A. Shapiro, S., The Johns Hopkins University, U. S. A. Shepherd, I. W., Cornell University, U. S. A. Shiren, N., IBM Research Laboratory (Yorktown Heights), U. S. A. Silverman, B. D., NASA Electronics Research Center, U. S. A. Singh, S., Bell Telephone Laboratories, U. S. A. Sizemore, T., University of California, U. S. A. Sjolander, A., Chalmers Tekniska Hogskola, Sweden Smith, A. W., Research Laboratory (Yorktown Heights), U. S. A. Smith, R. W., R. C. A. Laboratories, U. S. A. Solin, S. A., Purdue University, U. S. A. Spears, D. L., Purdue University, U. S. A. Stoicheff, B. P., University of Toronto, Canada Strahm, N. D., Massachusetts Institute of Technology, U. S. A. Swinney, H. L., The Johns Hopkins University, U. S. A. SZigeti, B., University of Reading, England Tait, W. C., 3M, Central Research Laboratories, U. S. A. Taylor, W., University of Edinburgh, Scotland Tell, B., Bell Telephone Laboratories, U. S. A. Teng, M. K., Faculte des Sciences de PariS, France Thorpe, M., University of Oxford, England Timusk, T., McMaster University, Canada Toa-Ning NG, Carleton University, Canada Tornberg, N. T., Massachusetts Institute of Technology, U. S. A. Tzoar, N., City College (New York), U. S. A. Ushioda, S., University of Pennsylvania, U. S. A.

Vassell, M. 0., General Telephone and Electronics Laboratories, U. S. A. Vella-Coleio, G., Bell Telephone !-aboratories, U. S. A. Volochine, B., Commissariat a YEnergie Atomique, France Wadsack, R., Yale University, U. S. A. Wagner, R. J., Naval Research Laboratory, U. S. A. Walker, L., Bell Telephone Laboratories, U. S. A. Wallace, P. R., McGill University, Canada Wallis, R. F., Naval Research Laboratory, U. S. A. Walls, D. F., Harvard University, U. S. A. Wang, C. H., Bell Telephone Laboratories, U. S. A. Wang, F. F. Y., State University of New York (Stony Brook), U. S. A. Ward, A. T., Xerox Research Laboratory, U. S. A. Watson, G., University of Kent (Canterbury), England Webb, W. W., Cornell University, U. S. A. Weber, A., Fordham University, U. S. A. Weissmann, A. N., Universitatea Babes-Bolyai, Rumania Welsh, H. L., University of Toronto, Canada Wemple, S. H., Bell Telephone Laboratories, U. S. A. Wieder, S., Fairleigh Dickinson University, U. S. A. Wilkinson, G. R., King's College, England Wilson, C. M., The Johns Hopkins University, U. S. A. Wolff, P. A., Bell Telephone Laboratories, U. S. A. Woolston, J. E., International Atomic Energy Agency, Austria Worlock, J. M., Bell Telephone Laboratories, U. S. A. Wright, G. B., Massachusetts Institute of Technology, Lincoln Laboratory, U. S. A. Xinh, N. X., University of Colorado, U. S. A. Zeiger, H., Massachusetts Institute of Technology, Lincoln Laboratory, U. S. A. Zucker, J., General Telephone and Electronics Laboratories, U. S. A.

753

Anastassakis, E., E-8, p. 421 Argyres, P. N., D-6, p. 325 Ashkin, M., E-5, p. 389 Balkanski, M., H-ll, p. 731 Bendow, B., E-4, p. 381

AUTHOR INDEX

Benedek, G. B., G-5, p. 593, H-l, p. 637 Benedek, Giorgio, F-l0, p. 531 Birman, J. L., E-4, p. 381, F-5, p. 487 Brafman, 0., F-ll, p. 543 Brody, E. M., H-6, p. 683 Bronstein, J., G-l0, p. 631 Buchenauer, C. J., F-9, p. 521 Burstein, E., A-3, p. 43, E-l, p. 347, E-6, p. 399, E-8, p. 421, E-9, p. 429 Callender, R. H., F-7, p. 505 Chang, R. K., E-3, p. 369 Cole, T., H-4, p. 665 Conwell, E. M., G-8, p. 615 Corolkov, A. P., B-4, p. 119 Cummins, H. Z., H-6, p. 683, H-8, p. 697, H-9, p. 705 Damen, T. C., E-2, p. 359 DiDomenico, Jr., M., A-5, p. 65 Dietz, R. E., C-6, p. 231 Dransfeld, K., G-4, p. 589 Elliott, R. J., C-2, p. 199 Englman, R., B-9, p. 157 Fabelinskii, I. L., G-l, p. 563 Faure, P., B-8, p. 151 Feldman, D. W., E-5, p. 389 Fenner, W. R., F-6, p. 497 Filler, A., E-8, p. 421 Fitchen, D. B., F-9, p. 521 Fleury, P. A., C-l, p. 185, H-3, p. 651, H-7, p. 689 Fray, S., B-7, p. 139 Freund, I., H-2, p. 645 Ganguly, A. K., F-5, p. 487, G-8, p. 615 Gammon, R. W., G-2, p. 579 Gayles, J. N., H-l0, p. 715 Gorelik, V.S., A-7, p. 85 Govindarajan, J., B-l0, p. 167 Groves, S. H., D-7, p. 335 Guggenheim, H. J., C-6, p. 231 Halley, J. Woods, B-12, p. 175, C-3, p. 207 Hamilton, D. C., D-4, p. 309 Harbeke, G., C-4, p. 221

755

756

Hardy, J. R., B-2, p. 99 Haridasan, T. M., B-10, p. 167 Heinicke, W., G-4, p. 589 Hizhnyakov, V., F-8, p. 513 Hopfield, J. J., C-9, p. 623 Johnson, F. A., B-1, p. 91, B-7, p. 139 Kahane, A., B-8, p. 158 Kaminow, I. P., H-5, p. 675 Karo, A. M., B-2, p. 99 Kay, S., B-7, p. 139 Keating, D. E., E-3, p. 369 Kelley, P. L., D-7, p. 335 Kiel, A., C-8, p. 245 Klein, M. V., F-6, p. 497 Koningstein, J. A., B-11, p. 173, C-7, p. 239 Krauzman, M., B-3, p. 109 Krishnamurthy, N., B-10, p. 167 Krishnan, R. S., B-10, p. 167 Lacina, W. B., F-1, p. 439 Lazay, P. D., G-5, p. 593 Leigh, R. S., F-4, p. 477 Leite, R. C. C., E-2, p. 359 Lin-Chung, P. J., C-10, p. 263 Lockwood, D. J., A-6, p. 75 Loudon, R., A-2, p. 25 Low, W., G-10, p. 631 Lunacek, J. H., G-5, p. 593 Makarov, V. P., D-8, p. 345 Maradudin, A. A., E-6, p. 399 McWhorter, A. L., D-3, p. 297, D-4, p. 309, D-6, p. 325, F-2, p. 455 Mills, D. L., E-1, p. 347, E-6, p. 399 Mitra, S. S., F -11, p. 543 Moch, P., C-6, p. 231 Mon, Jean-Peirre, B-5, p. 121 Mooradian, A., D-2, p. 285, D-3, p. 297 Mortensen, O. Sonnich, C-7, p. 239 Mulazzi, E., F-10, p. 531 Nilsen, W. G., B-6, p. 129 Nusimovici, M., H-11, p. 731 O'Brien, R. J., G-9, p. 623 Oseroff, A., C-5, p. 223 O'Shaughnessy, J., B-7, p. 139 O'Shea, D. C., H-8, p. 697 Page, Jr., J. B., F-9, p. 521 Pari sot, G., C-6, p. 231 Parker, Jr., J. H., E-5, p. 389 Parsons, J. L., H-4, p. 665 Perry, C. H., F-3, p. 467 Pershan, P. S., C-5, p.223, F-1, p. 439, F-7, p. 505 Peticolas, W., H-10, p. 715 Pike, E. R., B-7, p. 139 Pinczuk, A., A-3, p. 43, E-1, p. 347, E-9, p. 429 Pine, A. S., G-3, p. 581

Platz man, P., D-5, p. 317 Porto, S. P. S., A-1, p. 1 Ralston, J. M., E-3, p. 369 Rebane, K., F-8, p. 513 Rimai, L., H-4, p. 665 Rjazanov, v. S., A-7, p. 85 Rosasco, G. J., G-9, p. 623 Ruppin, R., B-9, p. 157 Russell, J. P., B-7, p. 139 Scott, J. F., A-3, p. 43, A-4, p. 57, E-2, p. 359, H-7, p. 689 Sennett, C., B-7, p. 139 Shapiro, S. M., H-9, p. 705 Sizemore, T., E-6, p. 399 Smith, A. W., G-6, p. 603 Smith, C., B-7, p. 137 Smith, R. W., G-7, p. 611 Stegmeier, E. F., C-4, p. 221 Stekhanov, A. I., B-4, p. 119 Strahm, N. D., F-2, p. 455 Sushschinskii, M. M., A-7, p. 85 Szigetti, B., F-4, p. 477 Tehver, I., F-8, p. 513 Teng, M. K., H-11, p. 731 Thomas, D. G., C-9, p. 255 Thorpe, M. F., C-2, p. 199 Tornberg, N. E., F-3, p. 467 Tzoar, N., D-5, p. 317 Ushioda, S., A-3, p. 43, A-4, p. 57, E-1, p. 347 Wallis, R. F., C-10, p. 263 Wang, C. H., H-3, p. 651 Weber, A., G-9, p. 623 Wemple, S. H., A-5, p. 65 Winterling, G., G-4, p. 589 Wolff, P. A., D-1, p. 273, D-5, p. 317 Worlock, J. M., E-7, p. 411, H-7, p. 689 Wright, G. B., D-7, p. 335 Zemon, S., G-8, p. 615 Zucker, J., G-8, p. 615

757

TOPICAL REFERENCES*

Acoustoelectric Effect, G-7, p. 611, G-8, p. 615 Acoustic Phonons, G-3, p. 581

759

Acoustic Phonons-Frequency Shift, B-7, p. 139, G-3, p. 581, G-5, p. 593, H-6, p. 683, H-9, p. 705

Acoustic Phonons-Lifetime, G-3, p. 581, G-5, p. 593, H-9, p. 705 Acoustic Phonons-Temperature Dependence, G-3, p. 581, G-5, p. 593, H-6, p. 683,

H-9, p. 705 Alkali Fluorides, B-2, p. 99 Alkali Halides, F-6, p. 497, F-I0, p. 531 Aluminum Antimonide, D-2, p. 285 Ammonium Bromide, H-3, p. 651, H-4, p. 665 Ammonium Chloride, G-5, p. 593, H-l, p. 637, H-4, p. 665 Ammonium Dihydrogen Phosphate, B-I0, p. 167 Antiferromagnets, C-l, p. 185, C-2, p. 199 Barium Fluoride, F-11, p. 543 Barium Titanate, A-3, p. 43 Bernstein Modes, D-5, p. 317 Beryllium, E-6, p. 399, E-5, p. 389 Birefringence, E-8, p. 421 Bismuth, E-5, p. 389 Brillouin Scattering, A-l, p. 1, A-5, p. 65, B-7, p. 139, G-l, p. 563, G-3, p. 581,

G-5, p. 593, G-7, p. 611, G-8, p. 615, G-I0, p. 631, H-6, p. 683, H-9, p. 705, H-I0, p. 715

Cadmium Bromide, A-6, p. 75 Cadmium Chloride, A-6, p. 75 Cadmium Chloride Structure, A-6, p. 75 Cadmium Chromium Selenide, C-4, p. 221 Cadmium Sulfide, A-7, p. 85, C-9, p. 255, E-l, p. 347, E-2, p. 359, E-4, p. 381,

E-3, p. 369, G-7, p. 611, G-8, p. 615 Cadmium Telluride, D-l, p. 273, D-2, p. 285, E-3, p. 369 Calcium Fluoride, F-l, p. 439 Cerium Trichloride, C-8, p. 245 Cesium Chloride Structure, F-4, p. 477, H-3, p. 651, H-4, p. 665 Cesium Fluoride, B-2, p. 99 Charged Defects, F-7, p. 505 Charge Density Fluctuations, D-l, p. 273, D-2, p. 285, D-3, p. 297, D-4, p. 309,

D-5, p. 317, D-6, p. 325, E-6, p. 399 Cobalt Fluoride, C-2, p. 199 Collective Modes, D-l, p. 273, D-2, p. 285, D-3, p. 297, D-5, p. 317, D-6, p. 325,

E-6, p. 399 Concentration Effects, C-5, p. 223, D-8, p. 345, F-l, p. 439, F-11, p. 543 Critical Temperature H-l, p. 637, H-5, p. 675, H-9, p. 705

*Owing to the nature of these Proceedings and the fact that particular topics appear many times in a given paper, it has been decided to give Topical References, rather than a conventional Subject Index. Consequently, reference to each topic is given by citing the paper-number and the first page of the paper, or papers, in which the topic appears.

760

Cuprous Chloride, B-3, p. 109 Cyanide Ion, F-7, p. 505 Cyclotron Frequency, C-10, p. 263, D-5, p. 317, D-7, p. 335, D-8, p. 345 Debye Length, D-1, p. 273, D-2, p. 285, D-5, p. 317 Defects, F-1, p. 439, F-2, p. 455, F-5, p. 487, F-8, p. 513, F-10, p. 531,

F-11, p. 543 Deformation Dipole Model, B-2, p. 99, F-10, p. 531 Diamond Structure, E-8, p. 421 Dielectric Constant, A-3, p. 43, B-1, p. 91, B-9, p. 157, D-1, p. 273, D-2, p. 285,

D-5, p. 317, E-6, p. 399, E-7, p. 411, F-1, p. 439, H-5, p. 675 Domains, H-3, p. 651, H-4, p. 665, H-7, p. 689, H-8, p. 697 Elastic Constants, B-7, p. 139, G-5, p. 593, G-9, p. 623 Elasto-Optical Constants, G-5, p. 593 Electric Field Induced Activity, A-1, p. 1, E-7, p. 411, E-8, p. 421, E-9, p. 429,

F-4, p. 477, G-8, p. 615, H-7, p. 689 Electronic Impurities, A-1, p. 1, A-6, p. 75, C-5, p. 223, C-6, p. 231, C-7, p. 239,

C-8, p. 245, C-9, p. 255, C-10, p. 263, F-8, p. 513 Electro-Optic Effect, A-2, p. 25, A-3, p. 43, E-1, p. 347, F-2, p. 455, H-5, p. 675 Electro-Optic Coefficient, D-3, p. 297 Excitons, B-12, p. 175, C-9, p. 255, E-1, p. 347, E-4, p. 381, E-9, p. 429,

F-5, p. 487 Fabry-Perot, B-7, p. 139, G-5, p. 593, G-7, p. 611 F-Centers, A-1, p. 1, F-9, p. 521, F-10, p. 531, F-11, p. 543 Ferroelectric, A-3, p. 43, A-5, p. 65, B-10, p. 167 Ferroelectric Transitions, A-5, p. 65, H-5, p. 675, H-6, p. 683, H-11, p. 731 Ferromagnetic, C-4, p. 221 Gallium Arsenide, D-1, p. 273, D-2, p.285, D-3, p. 297, D-4, p. 309, D-6, p. 325,

F-2, p. 455 Gallium Phosphide, A-2, p. 25, A-7, p. 85, B-7, p. 139, E-1, p. 347, F-2, p. 455 Garnets, C-7, p. 239 Germanium, C-10, p. 263 Gold Aluminum, E-5, p. 389, E-6, p. 399 Greens Function Techniques, C-2, p. 199, C-5, p. 223, C-6, p. 231, E-6, p. 399,

F-1, p. 439, F-12, p. 551 Hybrid Modes, D-5, p. 317 Hydrogen Bond, B-8, p. 151, H-5, p. 675 Hydroxyl Ion, F-6, p. 497, F-7, p. 505 Hysteresis, H-9, p. 705, H-11, p. 731 Ice, B-8, p. 151 Impurities, A-1, p. 1, C-5, p. 223, C-6, p. 231, C-10, p. 263, F-1, p. 439,

F-4, p. 477, F-6, p. 497, F-7, p. 505, F-9, p. 521, F-11, p. 543 Indium Antimonide, C-10, p. 263, D-1, p. 273, D-7, p. 335, D-8, p. 345, E-9, p. 429 Indium Arsenide, D-1, p. 273 Indium Phosphide, D-1, p. 273, D-2, p. 285 Infrared Absorption, A-6, p. 75, B-7, p. 139, C-2, p. 199, C-3, p. 207, E-8, p. 421,

H-3, p. 651, H-7, p. 689 Instrumentation, B-7, p. 139, H-8, p. 697 Interband Effects, D-3, p. 297, D-4, p. 309, D-6, p. 325, D-7, p. 335 Iron Fluoride, C-1, p. 185, C-3, p. 207 Landau Damping, D-l, p. 273, D-2, p. 285, D-5, p. 317 Landau Levels, A-1, p. 1, C-10, p. 263, D-7, p. 335, D-8, p. 345 Lanthanum Aluminate, H-7, p. 689 Lead Telluride, D-6, p. 325

Lead Titanate, F-3, p. 467 Line Shape, A-3, p. 43, A-5, p. 65, F-1, p. 439, F-8, p. 513, H-3, p. 651 Lithium Niobate, A-5, p. 65, G-9, p. 623 Local Modes, C-5, p. 223, C-6, p. 231, F-1, p. 439, F-2, p. 455, F-8, p. 513 Lyddane-Sachs-Teller Relation, A-3, p. 43, B-3, p. 109 Magnesium, E-5, p. 389 Magnesium Oxide, B-5, p. 121 Magnetic Field Effects, C-9, p. 255, C-10, p. 263, D-5, p. 317, D-6, p. 325,

D-7, p. 335, G-6, p. 603, H-ll, p. 731 Magnetoelastic Waves, G-6, p. 603 Magnetoplasma Waves, D-6, p. 325 Magnon Dispersion Curves, <';-1, p. 185 Magnon Interactions, C-1, p. 185, C-2, p. 199, C-5, p. 223

761

Magnons, A-1, p. 1, C-1, p. 185, C-2, p. 199, C-4, p. 221, C-5, p. 223, C-6, p. 231 Manganese Fluoride, C-1, p. 185, C-3, p. 207, C-5, p. 223, C-6, p. 231 Mass Defect Modes, F-1, p. 439, F-2, p. 455 Metals, E-5, p. 389, E..:6, p. 399 Mixed Crystals, E-3, p. 369, F-1, p. 439, F-2, p. 455, F-3, p. 467 Molecular Impurities, F-8, p. 513 Morphic Effects, E-8, p. 421, E-9, p. 429 Nickel Fluoride, C-1, p. 185 Nitrite Ion, F-7, p. 505 Opaque Semiconductors, E-6, p. 399 Optical Phonons, A-2, p. 25, A-4, p. 57, A-6, p. 75, B-2, p. 99, B-6, p. 129,

C-4, p. 221, D-3, p. 297, E-1, p. 347, E-2, p. 359, E-3, p. 369, E-5, p. 389, E-8, p. 421, E-9, p. 429, F-l, p. 439, F-2, p. 455, H-11, p. 731

Optical Phonons-Frequency Shift, B-7, p. 139, F-l, p. 439, H-5, p. 675, H-9, p. 705 Optical Phonons-Lifetime, F-1, p. 439, H-5, p. 675 Optical Phonons-Temperature Dependence, F-l, p. 439, H-5, p. 675, H-9, p. 705 Order-Disorder Transition, G-5, p. 593, H-l, p. 637, H-3, p. 651, H-4, p. 665,

H-5, p. 675, H-6, p. 683 Paramagnons, C-1" p. 185 Perovskite Structure, A-3, p. 43, A-5, p. 65, E-7, p. 411, H-7, p. 689 Phase Transitions, F-3, p. 467, H-6, p. 683, H-'7, p. 689, H-9, p. 705, H-10, p. 715,

H-11, p. 731 Phonon Symmetry ASSignments, A-3, p. 43, A-6, p. 75, B-3, p. 109, B-5, p. 121,

B-6, p. 129, B-8, p. 151, B-10, p. 167, C-4, p. 221, H-3, p. 651, H-4, p. 665, H-7, p. 689

Phonon VelOCities, G-5, p. 593 Photo elastic Constants, G-5, p. 593 Plasmons, A-1, p. 1, D-l, p. 273, D-2, p. 285, D-3, p. 297, D-5, p. 317 Polariton Dispersion Curve, A-2, p. 25, A-3, p. 43, E-l, p. 347 Polaritons, A-1, 1, A-2, p. 25, A-3, p. 43, A-4, p. 57, C-9, p. 255, E-l, p. 347,

E-2, p. 359, E-4, p. 381, F-2, p. 455 Polarization, C-6, p. 231, E-4, p. 381, H-5, p. 675 Polymers, H-10, p. 715 Potassium Bromide, B-3, p. 109 Potassium Chloride, B-3, p. 109 Potassium Dihydrogen Phosphate, H-5, p. 675, H-6, p. 683 Potassium Fluoride, B-2, p. 99 Potassium Iodide, B-3, p. 109 Potassium Niobate, F-3, p. 467 Potassium Nitrate, B-l0, p. 167, H-ll, p. 731

762

Potassium Tantalate, E-7, p. 411, F-3, p. 467 Quartz, A-2, p. 25, G-3, p. 581, H-l, p. 637, H-9, p. 705 Raman Gain, A-2, p. 25, A-4, p. 57, C-9, p. 255 Raman Scattering, A-2, p. 25, A-3, p. 43, B-7, p. 139, B-9, p. 157, B-l0, p. 167,

F-l, p. 439, F-2, p. 455, F-7, p. 505, H-8, p. 697 Rare Earth Ions, C-7, p. 239, C-8, p. 245 Rayleigh Scattering, A-l, p. 1, B-9, p. 157, C-9, p. 255, G-5, p. 593, G-l0, p. 631,

H-l, p. 637, H-9, p. 705 Relaxation Time, F-8, p. 513, G-5, p. 593, H-l, p. 637 Resonant Enhancements, C-3, p. 207, C-9, p. 255, D-3, p. 297, E-l, p. 347,

E-2, p. 359, E-3, p. 369, E-9, p. 429 Resonant Modes, C-5, p. 223, F-9, p. 521 Rubidium Fluoride, B-2, p. 99, F-9, p. 521 Rubidium Iodide, B-3, p. 109 Rubidium Manganese Fluoride, C-l, p. 185, C-2, p. 199 Rubidium Nickel Fluoride, C-l, p. 185 Rutile Structure, C-l, p. 185, C-3, p. 207, C-5, p. 223 Scattering Coherence Length, E-6, p. 399 Scattering Cross Sections, A-3, p. 43, A-4, p. 57, A-5, p. 65, B-1, p. 91, B-2, p. 99,

B-9, p. 157, B-12, p. 175, C-l, p. 185, C-2, p. 199, C-7, p. 239, C-9, p. 255, D-l, p. 273, D-3, p. 297, D-4, p. 309, D-5, p. 317, D-6, p. 325, D-7, p. 335, D-8, p. 345, E-l, p. 347, E-6, p. 399, E-7, p. 411, E-8, p. 421

Schottky Barriers, E-9, p. 429 Screening, D-l, p. 273, D-2, p. 285, D-5, p. 317 Second Order Spectra, A-3, p. 43, A-4, p. 57, A-5, p. 65, A-6, p. 75, B-2, p. 99,

B-3, p. 109, B-4, p. 119, B-5, p. 121, B-6, p. 129, B-8, p. 151, C-5, p. 223, C-6, p. 231, C-7, p. 239, C-8, p. 245, C-9, p. 255, D-2, p. 285, F-9, p. 521, F-l0, p. 531

Selection Rules, A-3, p. 43, A-4, p. 57, A-5, p. 65, A-6, p. 75, B-2, p. 99, B-3, p. 109, B-6, p. 129, B-8, p. 151, C-5, p. 223, C-6, p. 231, C-7, p. 239, C-8, p. 245, C-9, p. 255, C-l0, p. 263, D-7, p. 335, E-6, p. 399, E-8, p. 421, F-3, p. 463, F-7, p. 505, F-8, p. 513, F-l0, 531, H-3, p. 651, H-4, p. 665, H-7, p. 689

Shell Model, B-7, p. 139 Silicon, E-3, p. 369 Silicon Carbide, B-6, p. 129, B-9, p. 157 Single Particle ExCitations, D-l, p. 273, D-2, p. 285, D-4, p; 309, D-6, p. 325 Skin Depth, E-6, p. 399 Sodium Bromide, F-9, p. 521, F-l0, p. 531 Sodium Chloride, B-3, p. 109, B-4, p. 119, B-9, p. 157 Sodium Chloride Structure, B-5, p. 121, B-9, p. 157, F-4, p. 477 Sodium Fluoride, B-2, p. 99 Sodium Nitrate, B-l0, p. 167 Sodium Tantalate, F-3, p. 467 Soft Modes, A-5, p. 65, H-5, p. 675, H-6, p. 683, H-7, p. 689, H-9, p. 705 Spin Density Fluctuations, D-2, p. 285, D-6, p. 325 Spin Orbit Effects, C-l, p. 185, C-9, p. 255, D-2, p. 285, D-4, p. 309, D-6, p. 325,

D-7, p. 335 Spin Waves, A-l, p. 1, C-l, p. 185, C-4, p. 221, C-5, p. 223, C-6, p. 231 Strontium Fluoride, F-l, p. 439, F-ll, p. 543 Strontium Titanate, E-7, p. 411, H-7, p. 689, H-8, p. 697 Surface Modes, B-9, p. 157 Temperature Variation of Phonon Frequency, A-5, p. 65, F-3, p. 467, G-5, p. 593,

H-5, p. 675, H-6, p. 683, H-9, p. 705

Temperature Variation of Phonon Lifetime, E-3, p. 369, F-1, p. 439, G-3, p. 581, H-3, p. 651, H-4, p. 665, H-5, p. 675

Temperature Variation of Phonon Velocity, G-3, p. 581, G-5, p. 593, H-6, p. 683, H-9, p. 705

763

Temperature Variation of Scattering Intensity, B-3, p. 109, B-4, p. 119, C-6, p. 231, 0-3, p. 297, 0-6, p. 325, E-1, p. 347, E-3, p. 369, E-9, p. 429, F-11, p. 543, G-5, p. 593, H-3, p. 651, H-4, p. 665, H-5, p. 675, H-9, p. 705

Thulium Gallium Garnet, C-7, p. 239 Tungsten Bronze, A-5, p. 65 Tunneling Frequency, H-5, p. 675 Wurtzite Structure, B-6, p. 129 ytterbium Gallium Garnet, C-7, p. 239 yttrium Aluminum Garnet, C-7, p. 239, 0-2, p. 285 yttrium Gallium Garnet, C-7, p. 239 Zeeman Splitting, C-8, p. 245, C-10, p. 263 Zinc, E-5, p. 389 Zincblende Structure, B-6, p. 129, B-9, p. 157, E-8, p. 421 Zinc Oxide, E-1, p. 347, G-8, p. 615 Zinc Selenide, B-6, p. 129, E-1, p. 347, E-2, p. 359 Zinc Sulfide, B-3, p. 109, B-6, p. 129, E-1, p. 347 Zinc Telluride, B-6, p. 129