520/530/580.495 microfabrication laboratory and 520

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520/530/580.495 Fall 2003 © A.G. Andreou and J. Wang 1 520/530/580.495 Microfabrication Laboratory and 520.773 Advanced Topics In Fabrication and Microengineering (VLSI) Very Large Scale Integrated Circuits and (MEMS) Microelectromechanical Systems

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Page 1: 520/530/580.495 Microfabrication Laboratory and 520

520/530/580.495 Fall 2003 © A.G. Andreou and J. Wang 1

520/530/580.495Microfabrication Laboratory

and

520.773Advanced Topics

In Fabrication and Microengineering

(VLSI) Very Large Scale Integrated Circuits

and

(MEMS) Microelectromechanical Systems

Page 2: 520/530/580.495 Microfabrication Laboratory and 520

520/530/580.495 Fall 2003 © A.G. Andreou and J. Wang 2

VLSI and MOSIS (Metal Oxide Semiconductor

Implementation System)• AMI 0.5 and 1.5 micron CMOS• TSMC 0.35 and 0.25 micron CMOS• IBM SiGe 0.25, 0.18 micron BiCMOS• Peregrine 0.5 micron SOS CMOS

520.216, 520.491, 520.492 will teach you you how to analyze and design analog and digital integrated circuits.

Key idea: Use a number of different manufacturers to contribute manufacturing capacity to multiuserprojects.

http://www.mosis.org/

Page 3: 520/530/580.495 Microfabrication Laboratory and 520

520/530/580.495 Fall 2003 © A.G. Andreou and J. Wang 3

NMOS Fabrication (I)

Page 4: 520/530/580.495 Microfabrication Laboratory and 520

520/530/580.495 Fall 2003 © A.G. Andreou and J. Wang 4

NMOS Fabrication (II)

Page 5: 520/530/580.495 Microfabrication Laboratory and 520

520/530/580.495 Fall 2003 © A.G. Andreou and J. Wang 5

CMOS Inverter

Page 6: 520/530/580.495 Microfabrication Laboratory and 520

520/530/580.495 Fall 2003 © A.G. Andreou and J. Wang 6

DRAM

A 1-Gb DRAM that contains over 2 billion components. (Photograph courtesy of IBM/Siemens, 1999 IEEE Int. Solid State Circuit Conference.)

Page 7: 520/530/580.495 Microfabrication Laboratory and 520

520/530/580.495 Fall 2003 © A.G. Andreou and J. Wang 7

Non-volatile MEMORY (Floating Gate)

Page 8: 520/530/580.495 Microfabrication Laboratory and 520

520/530/580.495 Fall 2003 © A.G. Andreou and J. Wang 8

MUMP(MultiUser MEMS Process)

• PolyMUMP: 3 layer polysilicon surface micromachining

• SOIMUMP: 3 mask Silicon On Insulator bulk micromachining

• MetalMUMP: electroplated nickel process.

520/530.487 next semester will teach you you how to analyze and design microsystems in MUMP process.

Key idea: Use a series of functional layers combined with sacrificial layers to produced desired structures

http://www.memscap.com/memsrus/crmumps.html

Page 9: 520/530/580.495 Microfabrication Laboratory and 520

520/530/580.495 Fall 2003 © A.G. Andreou and J. Wang 9

Poly MUMPs

PSG: Sacrificial, Polysilicon: Functional

Page 10: 520/530/580.495 Microfabrication Laboratory and 520

520/530/580.495 Fall 2003 © A.G. Andreou and J. Wang 10

Spinning Gear

Page 11: 520/530/580.495 Microfabrication Laboratory and 520

520/530/580.495 Fall 2003 © A.G. Andreou and J. Wang 11

What did we learn?

• Process Architecture• Mask Design • Photolithography• Silicon Oxidation• Wet Etching• Thin Film Deposition (evaporation)• Photoresist and Photoepoxy (SU-8)

processing• Packaging• Testing

Page 12: 520/530/580.495 Microfabrication Laboratory and 520

520/530/580.495 Fall 2003 © A.G. Andreou and J. Wang 12

Microfabrication Laboratory and Her Friends

MicrofabricationLaboratory

Introduction to MEMS

520/580.487Analog

IntegratedCircuits520.494

Mixed SignalVLSI

520.492

ElectronicsDesign Lab

520.448

AdvancedTopics in

Fabrication520.773

Introductionto VLSI520.216

BioMEMSand

Biosensors57x.yyy

Chemical Eng. for

Micro and Nano540.440/640

CAD of Digital VLSI

520.491