31-fuji-2sk2082-01

2SK2082-01 N-channel MOS-FETFAP-IIA Series 900V 1,4Ω 9A 150W

> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = ± 30V Guarantee- Avalanche Proof

> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier

> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item Symbol Rating UnitDrain-Source-Voltage V DS 900 VDrain-Gate-Voltage (RGS=20KΩ) V DGR 900 VContinous Drain Current I D 9 APulsed Drain Current I D(puls) 36 AGate-Source-Voltage V GS ±30 VMax. Power Dissipation P D 150 WOperating and Storage Temperature Range T ch 150 °C

T stg -55 ~ +150 °C

- Electrical Characteristics (TC=25°C), unless otherwise specified

Item Symbol Test conditions Min. Typ. Max. UnitDrain-Source Breakdown-Voltage V (BR)DSS ID=1mA VGS=0V 900 VGate Threshhold Voltage V GS(th) ID=1mA VDS=VGS 2,5 3,0 3,5 VZero Gate Voltage Drain Current I DSS VDS=900V Tch=25°C 10 500 µA

VGS=0V Tch=125°C 0,2 1,0 mAGate Source Leakage Current I GSS VGS=±30V VDS=0V 10 100 nADrain Source On-State Resistance R DS(on) ID=4,5A VGS=10V 1,1 1,4 ΩForward Transconductance g fs ID=4,5A VDS=25V 5 10 SInput Capacitance C iss VDS=25V 2200 3300 pFOutput Capacitance C oss VGS=0V 210 320 pFReverse Transfer Capacitance C rss f=1MHz 65 100 pFTurn-On-Time ton (ton=td(on)+tr) t d(on) VCC=600V 25 40 ns

t r ID=9A 60 90 nsTurn-Off-Time toff (ton=td(off)+tf) t d(off) VGS=10V 140 210 ns

t f RGS=10 Ω 70 110 nsAvalanche Capability I AV L = 100µH Tch=25°C 9 AContinous Reverse Drain Current I DR 9 APulsed Reverse Drain Current I DRM 36 ADiode Forward On-Voltage V SD IF=2xIDR VGS=0V Tch=25°C 1,2 1,8 VReverse Recovery Time t rr IF=IDR VGS=0V 450 nsReverse Recovery Charge Q rr -dIF/dt=100A/µs Tch=25°C 4 µC

- Thermal CharacteristicsItem Symbol Test conditions Min. Typ. Max. UnitThermal Resistance R th(ch-a) channel to air 35 °C/W

R th(ch-c) channel to case 0,833 °C/W

Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com

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新建图章

N-channel MOS-FET 2SK2082-01900V 1,4Ω 9A 150W FAP-IIA Series

> CharacteristicsTypical Output Characteristics Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics

↑ 1 ↑ 2 ↑ 3

I D [A

]

RD

S(O

N) [

Ω]

I D [A

]

VDS [V] → Tch [°C] → VGS [V] →

Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch

↑ 4 4 ↑ 5 ↑ 6

RD

S(O

N) [

Ω]

g fs

[S]

VG

S(t

h) [V

]

ID [A] → ID [A] → Tch [°C] →

Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode

↑ 7 ↑ 8 ↑ ↑ 9

C [n

F]

VD

S [V

]

VG

S [V

]

I F [A

]

VDS [V] → Qg [nC] → VSD [V] →

Allowable Power Dissipation vs. TC Safe operation area

↑

Zth

(ch-

c) [K

/W]

Transient Thermal impedance

↑ 10 ↑ 12 11

PD [W

]

I D [A

]

Tc [°C] → VDS [V] → t [s] →

This specification is subject to change without notice!







































31-fuji-2sk2082-01

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