8/6/2019 2sk3262 - 200V,20A

1/41

Item Symbol Rating Unit

Drain-source voltage VDS 200

Continuous drain current ID 20

Pulsed drain current ID(puls] 80

Gate-source voltage VGS 20

Maximum Avalanche Energy EAV *1 355

Max. power dissipation Ta=25C PD 2

Tc=25C PD 45

Operating and storage Tch +150

temperature range Tstg

Electrical characteristics (Tc =25C unless otherwise specified)

Thermalcharacteristics

2SK3262-01MR FUJI POWER MOS-FETN-CHANNEL SILICON POWER MOS-FET

Features

High speed switching

Low on-resistance

No secondary breadownLow driving power

Avalanche-proof

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DC converters

Equivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings

(Tc=25C unless otherwise specified)

Gate(G)

Source(S)

Drain(D)

Item Symbol Test Conditions

Zero gate voltage drain current IDSSVDS=200V

VGS=20V

ID=10A VGS=4V

ID=10A VGS=10V

ID=10A VDS=25V

VCC=100V ID=20A

VGS=10V

RGS=10

Min. Typ. Max. Units

V

V

A

mA

nA

m

S

pF

A

V

ns

C

ns

Min. Typ. Max. Units

Thermal resistanceRth(ch-c) channel to case

Rth(ch-a) channel to ambient

2.78

62.5

C/W

C/W

Symbol

V(BR)DSS

VGS(th)

IGSS

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

IAV

VSD

trr

Qrr

Item

Drain-source breakdown voltaget

Gate threshold voltage

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time ton

Turn-off time toff

Avalanche capability

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

Test Conditions

ID=1mA VGS=0V

ID=1mA VDS=VGS

Tch=25C

VGS=0V Tch=125C

VDS=0V

VDS=25V

VGS=0V

f=1MHz

L=100H Tch=25C

IF=20A VGS=0V Tch=25C

IF=20A VGS=0V

-di/dt=100A/s Tch=25C

V

A

A

V

mJ

W

W

C

C

*1 L=1.6mH, Vcc=24V

200

1.0 1.5 2.0

10 500

0.2 0.5

10 100

110 150

85 100

9.0 19.0

1700 2550

290 435

185 280

10 15

45 70

225 340

120 180

20

0.93 1.40

250

2.90

-55 to +150

TO-220F15

3. Source

2.54

8/6/2019 2sk3262 - 200V,20A

2/42

0 1 2 3 4 50.1

1

10

100

Typical transfer characteristics

ID=f(VGS):80s pulse test,VDS=25V,Tch=25C

ID[A]

VGS [V]

Characteristics

2SK3262-01MR FUJI POWER MOSFET

0 50 100 1500

10

20

30

40

50

Power Dissipation

PD=f(Tc)

PD[W]

Tc [C]10

010

110

210

310

-1

100

101

102

ID[A]

VDS [V]

Safe operating area

ID=f(VDS):D=0.01,Tc=25C

t=

1s

10s

1ms

10ms

100ms

100s

D.C.

0 1 2 3 4 5 6

0

10

20

30

40

50

15V

3.5V

3.0V

4.0V

4.5V

10V 5.0V

VGS=20V

Typical output characteristics

ID=f(VDS):80s pulse test,Tc=25C

ID[A]

VDS [V]

10-1

100

101

10210

-1

100

101

102

Typical forward transconductance

gfs=f(ID):80s pulse test,VDS=25V,Tch=25C

gfs[s]

ID [A]

0 10 20 30 40 50 600.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22

RDS(on)[]

ID [A]

Typical Drain-Source on-State Resistance

RDS(on)=f(ID):80s pulse test,Tch=25C

10V

15V

20V

4.0V

4.5V

3.5VVGS=3.0V

5.0V

t

TD=

t

T

8/6/2019 2sk3262 - 200V,20A

3/4

8/6/2019 2sk3262 - 200V,20A

4/44

2SK3262-01MR FUJI POWER MOSFET

0 25 50 75 100 125 1500

100

200

300

400

500

Maximum Avalanche energy vs. starting Tch

Eas=f(starting Tch):Vcc=24V,IAV