2n6107

Complementary Silicon PlasticPower Transistors

. . . designed for use in general–purpose amplifier and switchingapplications.

• DC Current Gain Specified to 7.0 Amperes hFE = 30–150 @ IC

= 3.0 Adc — 2N6111, 2N6288= 2.3 (Min) @ IC = 7.0 Adc — All Devices

• Collector–Emitter Sustaining Voltage —VCEO(sus) = 30 Vdc (Min) — 2N6111, 2N6288

= 50 Vdc (Min) — 2N6109= 70 Vdc (Min) — 2N6107, 2N6292

• High Current Gain — Bandwidth ProductfT = 4.0 MHz (Min) @ IC = 500 mAdc — 2N6288, 90, 92

= 10 MHz (Min) @ IC = 500 mAdc — 2N6107, 09, 11• TO–220AB Compact Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎ

2N61112N6288


2N6109

ÎÎÎÎÎÎÎÎÎ

2N61072N6292

ÎÎÎÎÎÎÎÎÎ

UnitÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage ÎÎÎÎÎÎÎÎ

VCEOÎÎÎÎÎÎ

30 ÎÎÎÎÎÎÎÎ

50 ÎÎÎÎÎÎ

70ÎÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage ÎÎÎÎÎÎÎÎ

VCB ÎÎÎÎÎÎ

40 ÎÎÎÎÎÎÎÎ

60 ÎÎÎÎÎÎ

80ÎÎÎÎÎÎ

Vdc


Emitter–Base Voltage ÎÎÎÎÎÎÎÎ

VEB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

5.0 ÎÎÎÎÎÎ

Vdc


Collector Current — ContinuousPeak

ÎÎÎÎÎÎÎÎ

IC ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

7.010

ÎÎÎÎÎÎ

Adc


Base Current ÎÎÎÎÎÎÎÎ

IBÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

3.0 ÎÎÎÎÎÎ

AdcÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25�CDerate above 25�C


PD ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

400.32

ÎÎÎÎÎÎÎÎÎ

WattsW/�C


Operating and Storage JunctionTemperature Range

ÎÎÎÎÎÎÎÎ

TJ, TstgÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

–65 to +150 ÎÎÎÎÎÎ

�C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

CharacteristicÎÎÎÎÎÎÎÎÎÎ

SymbolÎÎÎÎÎÎÎÎÎÎÎÎ

MaxÎÎÎÎÎÎ

UnitÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to CaseÎÎÎÎÎÎÎÎÎÎ

RθJCÎÎÎÎÎÎÎÎÎÎÎÎ

3.125ÎÎÎÎÎÎ

�C/W*Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor�

Semiconductor Components Industries, LLC, 2002

April, 2002 – Rev. 51 Publication Order Number:

2N6107/D

2N6107

2N6109

2N6111

2N6288

2N6292*ON Semiconductor Preferred Device

7 AMPEREPOWER TRANSISTORS

COMPLEMENTARYSILICON

30–50–70 VOLTS40 WATTS

*

*

CASE 221A–09TO–220AB

PNP

NPN

STYLE 1:PIN 1. BASE

2. COLLECTOR3. EMITTER

4. COLLECTOR1

23

4

2N6107 2N6109 2N6111 2N6288 2N6292

http://onsemi.com2

40

00 20 40 60 80 100 120 160

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

PD

, PO

WE

R D

ISS

IPA

TIO

N (

WA

TT

S)

20

30

140

10

2N6107 2N6109 2N6111 2N6288 2N6292

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25�C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic ÎÎÎÎÎÎÎÎÎÎ

Symbol ÎÎÎÎÎÎ

MinÎÎÎÎÎÎÎÎ

Max ÎÎÎÎÎÎ

Unit


OFF CHARACTERISTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)(IC = 100 mAdc, IB = 0) 2N6111, 2N6288

2N61092N6107, 2N6292

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

VCEO(sus) ÎÎÎÎÎÎÎÎÎÎÎÎ

305070

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

———


Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current(VCE = 20 Vdc, IB = 0) 2N6111, 2N6288(VCE = 40 Vdc, IB = 0) 2N6109(VCE = 60 Vdc, IB = 0) 2N6107, 2N6292


ICEOÎÎÎÎÎÎÎÎÎÎÎÎ

———

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

1.01.01.0


mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current(VCE = 40 Vdc, VEB(off) = 1.5 Vdc) 2N6111, 2N6288(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N6109(VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N6107, 2N6292(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150�C) 2N6111, 2N6288(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150�C) 2N6109(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150�C) 2N6107, 2N6292

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ICEXÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

——————

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

1001001002.02.02.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

µAdc

mAdc


Emitter Cutoff Current(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

IEBOÎÎÎÎÎÎÎÎÎ

—ÎÎÎÎÎÎÎÎÎÎÎÎ

1.0ÎÎÎÎÎÎÎÎÎ

mAdc


ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain(IC = 2.0 Adc, VCE = 4.0 Vdc) 2N6107, 2N6292(IC = 2.5 Adc, VCE = 4.0 Vdc) 2N6109(IC = 3.0 Adc, VCE = 4.0 Vdc) 2N6111, 2N6288(IC = 7.0 Adc, VCE = 4.0 Vdc) All Devices

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

hFE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

3030302.3


150150150—


—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage(IC = 7.0 Adc, IB = 3.0 Adc)

ÎÎÎÎÎÎÎÎÎÎ

VCE(sat) ÎÎÎÎÎÎ

— ÎÎÎÎÎÎÎÎ

3.5 ÎÎÎÎÎÎ

Vdc


Base–Emitter On Voltage(IC = 7.0 Adc, VCE = 4.0 Vdc)


VBE(on)ÎÎÎÎÎÎÎÎÎ

—ÎÎÎÎÎÎÎÎÎÎÎÎ

3.0ÎÎÎÎÎÎÎÎÎ

Vdc


DYNAMIC CHARACTERISTICS


Current Gain — Bandwidth Product (2)(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz) 2N6288, 92

2N6107, 09, 11


fT ÎÎÎÎÎÎÎÎÎ

4.010


——

ÎÎÎÎÎÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎCob

ÎÎÎÎÎÎ—ÎÎÎÎÎÎÎÎ250

ÎÎÎÎÎÎpFÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall–Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)ÎÎÎÎÎÎÎÎÎÎhfe

ÎÎÎÎÎÎ20ÎÎÎÎÎÎÎÎ—

ÎÎÎÎÎÎ—

*Indicates JEDEC Registered Data.(1) Pulse Test: Pulse Width � 300 µs, Duty Cycle � 2.0%.(2) fT = |hfe| • ftest.

2N6107 2N6109 2N6111 2N6288 2N6292

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Figure 2. Switching Time Test Circuit

+11 V

25 µs

0

-�9.0 V

RB

-�4 V

D1

SCOPE

VCC+�30 V

RC

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

51

D1 MUST BE FAST RECOVERY TYPE, eg:1N5825 USED ABOVE IB ≈ 100 mAMSD6100 USED BELOW IB ≈ 100 mA

RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS

2.0

0.07

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

1.0

0.7

0.5

0.3

0.2

0.1

0.020.1 0.2 0.3 0.5 2.0 3.0 7.0

TJ = 25°C

VCC = 30 V

IC/IB = 10

0.05

t, T

IME

(��

s)µ

tr

1.0 5.0

td @ VBE(off) ≈ 5.0 V0.07

0.03

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.010.01

0.5

0.2

0.1

0.05

0.02

r(t)

, TR

AN

SIE

NT

TH

ER

MA

L R

ES

ISTA

NC

E (

NO

RM

ALI

ZE

D)

0.05 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZθJC(t) = r(t) RθJCRθJC = 3.125°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1TJ(pk) - TC = P(pk) ZθJC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02 0.1 0.50.2

15

1.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

7.0

5.0

2.0

0.155.0 10

CURRENT LIMIT

SECONDARY

BREAKDOWN LIMIT

THERMAL LIMIT

@ TC = 25°C (SINGLE PULSE)

7.0

I C, C

OLL

EC

TOR

CU

RR

EN

T (A

MP

S)

dc

0.1 ms

1.0

0.5

0.2

0.3

2.0 3.0

0.5 ms

20 30 50 70 100

3.0

0.7

0.1ms

5.0 ms

There are two limitations on the power handling ability ofa transistor: average junction temperature and secondbreakdown. Safe operating area curves indicate IC – VCElimits of the transistor that must be observed for reliableoperation; i.e., the transistor must not be subjected to greaterdissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150�C; TC isvariable depending on conditions. Second breakdown pulselimits are valid for duty cycles to 10% provided TJ(pk)� 150�C. TJ(pk) may be calculated from the data inFigure 4. At high case temperatures, thermal limitations willreduce the power that can be handled to values less than thelimitations imposed by second breakdown.

2N6107 2N6109 2N6111 2N6288 2N6292

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300

0.5

VR, REVERSE VOLTAGE (VOLTS)

303.0 5.0 501.0 2.0

C, C

AP

AC

ITA

NC

E (

pF)

200

70

50

TJ = 25°C

Cib

100

Figure 6. Turn–Off Time

10 20 30

5.0

0.07

Figure 7. Capacitance

IC, COLLECTOR CURRENT (AMP)

3.0

2.0

1.0

0.7

0.5

0.3

0.050.1 0.2 0.3 0.5 2.0 3.0 7.0

TJ = 25°C

VCC = 30 V

IC/IB = 10

IB1 = IB2

0.1

t, T

IME

(��

s)µ

tr

1.0 5.0

0.2

0.07

ts

Cob

2N6107 2N6109 2N6111 2N6288 2N6292

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PACKAGE DIMENSIONS

CASE 221A–09ISSUE AA

TO–220AB

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES AREALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.570 0.620 14.48 15.75

B 0.380 0.405 9.66 10.28

C 0.160 0.190 4.07 4.82

D 0.025 0.035 0.64 0.88

F 0.142 0.147 3.61 3.73

G 0.095 0.105 2.42 2.66

H 0.110 0.155 2.80 3.93

J 0.018 0.025 0.46 0.64

K 0.500 0.562 12.70 14.27

L 0.045 0.060 1.15 1.52

N 0.190 0.210 4.83 5.33

Q 0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79

S 0.045 0.055 1.15 1.39

T 0.235 0.255 5.97 6.47

U 0.000 0.050 0.00 1.27

V 0.045 --- 1.15 ---

Z --- 0.080 --- 2.04

B

Q

H

Z

L

V

G

N

A

K

F

1 2 3

4

D

SEATINGPLANE–T–

CST

U

R

J

STYLE 1:PIN 1. BASE

2. COLLECTOR3. EMITTER

4. COLLECTOR

2N6107 2N6109 2N6111 2N6288 2N6292

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Notes

2N6107 2N6109 2N6111 2N6288 2N6292

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2N6107/D

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