div class=ts-pagebutton class=gotoPage data-page=1Page 1button div class=ts-imageimg data-url=2014-03-04-icon-delta-doping-just-outside-the-channel-figure-2-ald-al-o-thehtmlpage=1 data-page=1 class=ts-thumb lazyload alt=Page 1: · 2014-03-04 · icon delta-doping just outside the channel Figure 2 ALD Al O The GaAs-substrate transistor has a gate length of 180nm while the Inp device is for these days loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader034vdocumentssitereader034viewer20220423205f09841c7e708231d427325chtml5thumbnails1jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=2Page 2button div class=ts-imageimg data-url=2014-03-04-icon-delta-doping-just-outside-the-channel-figure-2-ald-al-o-thehtmlpage=2 data-page=2 class=ts-thumb lazyload alt=Page 2: · 2014-03-04 · icon delta-doping just outside the channel Figure 2 ALD Al O The GaAs-substrate transistor has a gate length of 180nm while the Inp device is for these days loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader034vdocumentssitereader034viewer20220423205f09841c7e708231d427325chtml5thumbnails2jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=3Page 3button div class=ts-imageimg data-url=2014-03-04-icon-delta-doping-just-outside-the-channel-figure-2-ald-al-o-thehtmlpage=3 data-page=3 class=ts-thumb lazyload alt=Page 3: · 2014-03-04 · icon delta-doping just outside the channel Figure 2 ALD Al O The GaAs-substrate transistor has a gate length of 180nm while the Inp device is for these days loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader034vdocumentssitereader034viewer20220423205f09841c7e708231d427325chtml5thumbnails3jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=4Page 4button div class=ts-imageimg data-url=2014-03-04-icon-delta-doping-just-outside-the-channel-figure-2-ald-al-o-thehtmlpage=4 data-page=4 class=ts-thumb lazyload alt=Page 4: · 2014-03-04 · icon delta-doping just outside the channel Figure 2 ALD Al O The GaAs-substrate transistor has a gate length of 180nm while the Inp device is for these days loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader034vdocumentssitereader034viewer20220423205f09841c7e708231d427325chtml5thumbnails4jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=5Page 5button div class=ts-imageimg data-url=2014-03-04-icon-delta-doping-just-outside-the-channel-figure-2-ald-al-o-thehtmlpage=5 data-page=5 class=ts-thumb lazyload alt=Page 5: · 2014-03-04 · icon delta-doping just outside the channel Figure 2 ALD Al O The GaAs-substrate transistor has a gate length of 180nm while the Inp device is for these days loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader034vdocumentssitereader034viewer20220423205f09841c7e708231d427325chtml5thumbnails5jpg width=140 height=200 divdiv
