1kw, 80 plus titanium, gan ccm totem pole bridgeless pfc
TRANSCRIPT
August 2021
Desheng Guo
1-kW, 80 Plus titanium, GaN CCM totem pole bridgeless PFC and half-bridge LLC reference design使用 CCM GaN 圖騰柱和半橋 LLC 實現 80 plus 鈦金牌效率的 1kW AC/DC 系統參考設計
1
Content
• Introduction of the1kW reference design
• Why choose Totem-Pole PFC with TI GaN
• Introduction to LLC resonant converter
• Test Data and waveforms
2
Target application
• Server PSU
3
85%
88%
90%
92%
94%
96%
97.5%OCP V3
20202005
OCP V2
*Open Compute Project (OCP)
1kW, 80plus titanium, AC/DC power supply Reference Design TIDA-010062
4
Tools & Resources
Target Applications
• Merchant network and server PSU
• Merchant telecom rectifiers
Features
• Digital controlled system solution with front stage and end stage;
• GaN for PFC stage & Si SJFET for DCDC stage;
• System peak efficiency: 96.3% @ 60% load;
• High efficiency between 20%~ 100% load, > 95%;
• Low iTHD, <10%@10% load, <5%@20% load, <2%@>50%load
• Over/undershoot <300mV@50% load Tr, 2.5A/us slew rate
• Small form factor, 38mm*66mm*160mm
Benefits
• Super High Efficiency makes thermal design simpler
• Solution with low component count
• Makes compliance with 80 Plus Titanium specs easier
• less than 5% THD for 20% to full load
• Fast load transient response with 2.5A/us slew rate requirement
• Power Density ~41W/in3
• TIDA-010062 and Tools Folder• Design Guide• Design Files: Schematics, BOM, Gerber• Device Datasheets:
‒ TMS320f280049, LMG3410R070, UCC27714, UCC21540,UCC27524, ISO7741FDW, CSD18510Q5B, INA180,TMCS1100
Solution Diagram
5
F280049C/F280025C
F280049C/F280025C
Why choose Totem-Pole PFC
6
+
Active bridge rectifier
Bridgeless
• AC switch
bridgeless
• Totem-pole
bridgeless
Which one is the future
• Technologies to improve PFC efficiency
PFC technology comparison
7
AC switch PFC Totem-pole PFC Active bridge PFC
Block diagram
Details 2 silicon diodes
2 MOSFETs
2 silicon diodes or SiC diodes
1 choke coil
2 GaN FETs or SiC MOSFETs
2 MOSFETs
1 choke coil
5 MOSFETs
1 silicon diodes or SiC diodes
1 choke coil
Cost Middle Lowest in future High
Efficiency On-time: 2 MOSFETs
Off-time: 1 SiC diode + 1
silicon diode
On-time: 1 MOSFET + 1 FET
Off-time: 1 MOSFET + 1 FET
On-time: 3 MOSFETs
Off-time: 2 MOSFETs + 1
diode
~98.7% ~99.0% ~98.5%
Why Choose TI-GaN in Totem-Pole PFC
8
• GaN has >50% lower switching energy
compared to SiC
• GaN has zero reverse recovery losses
• TI-GaN switches at up to 150V/ns
resulting in 5.5x reduction in losses
compared to SiC and 2.7x compared to
discrete GaN
• TI-GaN has 3x lower dead-time losses
compered to SiC and discrete GaN
• TI-GaN has the lowest cost
146
LMG3410: 600V GaN Power Stage
9
LDO,
BB
UVLO,
OC,TEMP
FAULT
VDD
5V
LPM
IN
RDRV
Current
Direct- Drive
Slew Rate
Enable
Switch
600V
GaN
D
S
S
VNEG
Built-in 5V LDO to power
external digital Isolator
Slew rate control by one external
resistor: 30 V/ns to 100 V/ns
High speed over current protection
with <100ns response time
Fault feedback to system controller
50mΩ /70mΩ -600V GaN FET
Integrated direct gate driver with zero common
source inductance
Low power mode for standby
Integrated temperature
protection and UVLO
Digital PWM input
Only +12V unregulated supply
needed
TI-GaN with integrated driver & protection portfolio
10
150mΩ<1kWLMG341xR150
70mΩ 1kWLMG341xR070
50mΩ 2.1kWLMG341xR050
50mΩ- 3kWLMG32xR050
30mΩ - 4kWLMG342xR030 30mΩ - 6kw
LMG352xR030-Q1
2x
the power AECQ-100
8x8 mm
12x12 mm
bottom-sidecooled
12x12 mm
top-sidecooled
6 devices in mass production
Gen-I (LMLG341x,
600V)
Gen-II (LMG342x,
600V)
Gen-IIAutomotive (LMG352x,
650V)
Samples, EVM and
Documentation: www.www.ti.com/product/LM
G3522R030-Q1
Samples, EVM and
Documentation: https://www.ti.com/product/
LMG3422R030
LMG342x/352x: TI Gen 2 GaN FETs
11
>150 V/ns Drain-Source Slew rate
capability; Adjustable from 30 V/ns to 150 V/ns
V/I/T fault reporting
12mm by 12 mm QFN
LMG342x: bottom-cooled
LMG352x: top cooled QFN with
wettable flanks
LMG342x: 600-V GaN FET
LMG352x: 650-V GaN FET
Overcurrent protection Cycle-by-Cycle
Short circuit protection Latched
Integrated 2.2 MHz gate driver with industry
lowest CSI
GaN FET temperature digital
PWM reporting for active power management
LMG3425/3525 Ideal diode
mode reduces reverse conduction lossesIntegrated gate driver bias
generated from 7.5-18 V unregulated supply supporting
2.2 MHz switching
5-V regulated output for
powering digital isolator
Wettable flanks
NEW
NEW
NEW
Isolated DC-DC
12
Tech Trend: High efficiency, high power density
Increase switching frequency
Reduce switching losses, soft switching
Recycle the leakage of transformer
Isolated DCDC
Phase Shift Full Bridge LLC Resonant
Introduction to LLC resonant converter
13
• HB LLC Resonant Converter is one of the most widely used soft-switching topologies in DC/DC Converters.
Pros:– Primary switches are ZVS on– Secondary switches are ZCS when fs < fr– Better EMI performance
Vsw
ILR
ID1
ZVS turn-on
ZCS turn-on/ turn-off
Cons:– Higher rms current– 2nd side need to use low ESR capacitance– Complicated control
LLC – Below, At and Above Resonance
14
• Above Resonance, ZVS achieved, CCM on sec, Rectifiers not soft
switched. Lower RMS currents for given power
• At Resonance, ZVS achieved, CCM on sec, Rectifiers are soft
switched (ZCS), Optimum efficiency
• Below Resonance, ZVS achieved, DCM on sec, Rectifiers are soft
switched (ZCS), RMS currents higher for given power.
0A
0A
0A
Gain vs FreqFor various Q
‘Sweet Spot’ at Resonance,Frequency almost independent of load
BUT – the difficulty is
Wide gain range requires large frequency variation
Q = 1
Q = 0.4
LLC: Gain vs Frequency Characteristic
15
• Gain curve of LLC
– RE = 8 NT2 RL / 2
(NT = Turns Ratio, RL = Load)
– QE = (√(LR/CR))/RE
– To improve efficiency, LN should be as high as possible
– Resonant frequency is
Peak Gain Curve Vs Q ( LN = 5)
LLC stage gain vs frequency with QE as a
parameter (normalised to f0, resonant frequency )Gain f Q ( )
LN f2
LN f2
f2
1−( ) 1 jf LN Q+( )+
LN
LM
LRQE
LR
CR
RE
f01
2 LR CR
• Gain curve design
– FHA
– Time domain calculation
– Simulation
C2000 strategy – expanding real-time control
16
Co
st-
Op
tim
ize
d
Mid
-ran
ge
Hig
h-P
erf
orm
an
ce
Price/P
erf
orm
ance
Code & Peripheral compatible
Generation 2
Generation 3
F2833x150 MIPS512 kB
F2803x120 MIPS128 kBF2802x
60 MIPS64 kB
F2806x180 MIPS256 kB
F28004x200 MIPS256 kB
ASIL-B
F2807x400 MIPS512 kB
ASIL-B/Sil-2
F2837xS400 MIPS1 MB
ASIL-B/Sil-2
F2838xS525 MIPS
1.5 MB
ASIL-B/Sil-2
F28002x100 MIPS
128 kB
QM
C2000 Portfolio OfferingBroadest Portfolio of Real Time MCUs
• Software Compatible Portfolio
• 60 MIPS to 1000 MIPS
• 32kB to 1.5MB Flash
• 6-32 PWM ch (16 High-Res)
• Up to 40 ADC ch
• I2C, UART, SPI, CAN, CAN-FD, Ethernet, EtherCAT, USB
• Packages from 32 QFN (5x5mm), QFP, to 337 BGA
• Safety Support, Industrial and Automotive
• <$1 to $10 Price Range
Flexible & Innov ativ e Capabilities
• High Precision Analog Sensing & Feature Rich PWMs
• DSP-Efficient CPU, Control Accelerators, & Parallel Multi -
Core Processing
• TMU, FPU, & CLA for More Performance
• CLB for Peripheral Customization, FSI for high-speed
communication, ERAD for Enhanced Diagnostics and
Profi l ing
• Enabling GaN & SiC Technologies
Real-time Control Systems Made Easy
• Over 25 Years of Expertise in Real-Time Control Systems
• Extensive Library of Public Reference Designs
• Software and Hardware Tools to Jump-Start your Design
and Shorten the Time Between Evaluation and Production
Time
F2837xD800 MIPS1 MB
ASIL-B/Sil-2
F2838xD925 MIPS
1.5 MB
ASIL-B/Sil-2
NEW
NEW
NEW
Production
STATUS
PowerSUITE digital power software tools make digital power control easier
17
Get started
adapting TI
code to your
digital power
design!
Digital Power SDK – Supported Solutions
18
EVM / TI Design C2000 Series Support Description
TIDM-1007F28004x
(CLA Support Enabled)Single-Phase Totem Pole CCM PFC
TIDM-02008F28004x
(CLA Support Enabled)Bi-directional Single-Phase Totem Pole CCM PFC
TIDM-DC-DC-BUCK F28004x DC/DC Synchronous Buck Converter
TIDM-HV-1PH-DCAC F28004x, F2837x Voltage source inverter & Grid Connected Inverter
TIDA-00961 F28004x Single-Phase Totem Pole CrM PFC
TIDM-1000F28004x, F2837x, F2838x
(CLA Support Enabled)Three Phase PFC: Vienna Rectifier
TIDM-1001 F28002x Two Phase Interleaved LLC Resonant Converter
TIDM-1022F28004x
(CLA support enabled)Valley Switching Boost PFC
TIDA-01604F28004x
(CLA support enabled)6.6-kW Single-Phase Totem Pole CCM PFC
TIDM-02002F28004x
(CLA support enabled)CLLLC: Bi-Directional Resonant Dual Active Bridge
TIDM-02000 F28004x Phase Shifted Full Bridge Bidirectional DC/DC Converter
TIDM-02011F28004x
(CLA support included)Live firmware update (LFU) solution
TIDM-02009F2838x
(CLA support included)EV traction with bi-directional DC-DC converter
TIDA-01606/TIDA-010039F2837x
(CLA support included)10-kW three phase AC-DC, T type inverter/ T type PFC
Design parameters and Test data of TIDA-010062
19
System efficiency test result
20
Pin Vo Io /A Posystem
eff.130.6 12.117 10 121.17 92.78%
252.9 12.076 20 241.52 95.50%
375.2 12.034 30 361.02 96.22%
498.1 12.004 40 480.16 96.40%
621 11.973 50 598.65 96.40%
745 11.939 60 716.34 96.15%
869 11.906 70 833.42 95.91%
993 11.873 80 949.84 95.65%
1044 11.859 84 996.156 95.42%
89.00%
90.00%
91.00%
92.00%
93.00%
94.00%
95.00%
96.00%
97.00%
0 200 400 600 800 1000 1200
230Vac Titanium
PFC Stage Design Parameters
21
L Q1 Q3
Q4Q2
C
Parameters Spec
AC Input voltage range 100Vac ~ 264Vac
Nominal input voltage 230Vac
DC link voltage 385Vdc
Maximum power 1050W
Frequency 80kHz
GaN HEMET (Q1/Q2) LMG3410R070 (TI)
SR MOSFET (Q3/Q4) TK39A60W (Toshiba)
Inductor (L) 300uH
Bus Capacitor (C) 680uF450V
• PFC Design Parameters
Design Reference:• PMP20873 – 99% Efficient 1kW GaN-based CCM Totem-pole Power Factor Correction (PFC) Converter Reference Design• TIDM-1007 – Interleaved CCM Totem Pole Bridgeless PFC Reference Design Using C2000™ MCU
PFC Stage
22
96.50%
97.00%
97.50%
98.00%
98.50%
99.00%
99.50%
0 200 400 600 800 1000 1200
PFC Stage w/EMC 300uH, EQ 34*30*22,w/ 100uH DMC(Pctrl = 0.5W; Pdrv= 0.84W;)
Vin /Vac Iin /Aac Pin /W Vout /V Iout /A Pout /W Eff
(w ctrl & drv)
230.18 0.412 91.3 387.3 0.232 89.8536 96.99%
230.08 0.828 188.9 387.3 0.4818 186.6011 98.09%
230.05 1.2503 286.6 387.4 0.7319 283.5381 98.47%
229.88 1.674 384.1 387.4 0.9818 380.3493 98.68%
229.81 2.0963 481.2 387.4 1.2307 476.7732 98.80%
229.74 2.52 578 387.4 1.4806 573.5844 99.01%
229.66 2.946 676 387.3 1.7307 670.3001 98.96%
229.67 3.366 772 387 1.9807 766.5309 99.12%
229.51 3.802 872 387.4 2.2311 864.3281 98.97%
229.53 4.224 969 387.4 2.4811 961.1781 99.06%
229.55 4.574 1049 387.4 2.6813 1038.736 98.90%
(Including ctrl & drv loss)
Pctrl = 0.5W;
Pdrv = 0.84W;
DC-DC Stage Design Parameters
23
• LLC Design Parameters
Parameters Spec
DC link voltage 385Vdc
Maximum power 1000W
Switching Frequency 80kHz ~ 250kHz
Pri. MOSFET (Q5/Q6) TK39A60W (Toshiba)
SR MOSFET (S1/S2) CSD18510Q5B (TI)
Magnetic inductance (Lm) 200uH
Resonant Inductor (Lr) 13uH
Resonant Capacitance (Cr) 33nF*2
Output Capacitor 3300uF*2
LrQ5
S1 S2Q6
T1
Cr
Lm
Co
Design Reference:• TIDM-1001 – Two-Phase Interleaved LLC Resonant Converter Design With C2000™ Microcontrollers
LLC Stage
24
* Including driving loss & ctrl loss
Transformer, PQ3230, 16:1:1,Toshiba SK39A50,Fs=161kHz,openloop
Vin /V Iin /A Vo /V Io /A Po Eff w/ ctrl&drv
386.1 0.324 12.182 10 122 96.32%
386 0.641 12.149 20 243 97.66%
386 0.959 12.127 30 364 97.92%
386 1.276 12.103 40 484 98.02%
385.9 1.594 12.07 50 604 97.89%
385.9 1.911 12.038 60 722 97.76%
385.8 2.227 12 70 840 97.61%
385.8 2.5481 11.99 80 959 97.44%
385.7 2.6751 11.96 84 1005 97.24%96.20%
96.40%
96.60%
96.80%
97.00%
97.20%
97.40%
97.60%
97.80%
98.00%
98.20%
0 200 400 600 800 1000 1200
LLC Stage w/o Oring
Efficiency improvement with LMG3422R050
25
97.00%
97.20%
97.40%
97.60%
97.80%
98.00%
98.20%
98.40%
98.60%
0 200 400 600 800 1000
η
Pout /W
Eff. @166kHz LLC
TK39A60W
LMG3422R050
Conditions TIDA-010062, fs=166kHz, Toshiba TK39A60W(600V 55mR)
Vin /V Iin /A Vout /V Iout /A Pout /W Eff.
384.67 0.3206 11.975 10 119.75 97.10%
384.64 0.6339 11.944 20 238.88 97.97%
384.62 0.9475 11.920 30 357.60 98.13%
384.6 1.2611 11.898 40 475.92 98.12%
384.6 1.5748 11.874 50 593.70 98.02%
384.58 1.8861 11.835 60 710.10 97.90%
384.57 2.1963 11.791 70 825.37 97.72%
384.55 2.5058 11.745 80 939.60 97.51%
Conditions TIDA-010062, Fs=166kHz,LMG3422R050 (600V 50mR)
Vin /V Iin /A Vout /V Iout /A Pout /W 效率
384.73 0.32 11.992 10 119.92 97.41%
384.71 0.6327 11.961 20 239.22 98.28%
384.69 0.9447 11.929 30 357.87 98.47%
384.67 1.2570 11.898 40 475.92 98.43%
384.65 1.5692 11.869 50 593.45 98.32%
384.63 1.8811 11.837 60 710.22 98.16%
384.61 2.1915 11.795 70 825.65 97.96%
384.6 2.5011 11.748 80 939.84 97.70%
Load transient
26
• No load / 50% load, 2.5A/us
250mV
280mV
Ch4 – Iin, Ch2 – Vlink, Ch4 – Vout(ac coupled)
(230Vac input)
Ch4 – Iin, Ch2 – Vlink, Ch4 – Vout(ac coupled)
Load transient
27
• 50% Load/100 Load, 2.5A/us
200mV
300mV
(230Vac input)
Ch4 – Iin, Ch2 – Vlink, Ch4 – Vout(ac coupled) Ch4 – Iin, Ch2 – Vlink, Ch4 – Vout(ac coupled)
Output ripple
28
(230AC input)
Ch4 – Vout(ac)100% load50% load
System startup
29
• 230Vac no load
Ch1 – Vac, Ch2 – Iac, Ch3 – Vbus, Ch4 – Vout
• 230Vac 50% load
EMI - CE Test result
30
• 230Vac, 800W load
Summary
31
• 80 plus titanium efficiency, =>95.4% @ 25%-100% load
• Fast load transient, Vo change within 300mV @ 2.5A/us slew rate
• Low iTHD, <10%@10% load, <5%@20 load, <2%@>50% load
• Power Density 41W/in3, 38mm*66mm*160mm
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