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Transient protection for PV power
electronics
Transient protection for PV powerTransient protection for PV power
electronicselectronics
Michael RoppMichael Ropp
Electrical Engineering DepartmentElectrical Engineering DepartmentSouth Dakota State UniversitySouth Dakota State University
Brookings, SD 57007Brookings, SD 57007--22202220
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The need for transient protection
The need for transient protectionThe need for transient protection
South Dakota State University
Electrical Engineering Department
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The need for transient protection
The need for transient protectionThe need for transient protection
South Dakota State University
Electrical Engineering Department
Sources of transients
Lightning Switching
Types of transients
AC-sidefairly well quantified DC-side
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Transient suppression devicesTransient suppression devicesTransient suppression devices
South Dakota State University
Electrical Engineering Department
Most TSDs are shunt elements that operate by
presenting a high impedance to low voltages, but low
impedances to high voltages.
The most common ones in use today operate on the
same principle as zener diodes.
MOV
Control
DC
PV array
C1
C2
L
R
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Transient suppression devicesTransient suppression devicesTransient suppression devices
South Dakota State University
Electrical Engineering Department
Varistors
MOVs (most common TSD) SOVs
Silicon Avalanche Diodes (SADs)
(transorbs)
Ionizing gas tubes and spark gaps
(very high voltage DC) Filters
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Transient suppression devicesTransient suppression devicesTransient suppression devices
MOVs Generally the least expensive TSD
option, and readily available from many
manufacturers
Consist of a matrix of metallic oxide
(usually zinc oxide) or ceramicsandwiched between metal electrodes
Grain boundaries in zinc oxide act as
rectifying junctions, so the MOV isequivalent to an array of back-to-back
diodes
South Dakota State University
Electrical Engineering Department
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Transient suppression devicesTransient suppression devicesTransient suppression devices
SADs
Back-to-back zener diodes; one
forward, one avalanching
Excellent clamping properties
Also widely available in a range of
energy/voltage ratings
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Electrical Engineering Department
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Critical parameters for selecting TSDsCritical parameters for selectingCritical parameters for selecting TSDsTSDs
South Dakota State University
Electrical Engineering Department
Clamping or pass-through voltage Surge current capability
Energy (MOV) or power (SAD) dissipation
Response to standard pulses
10/1000 sec pulse
8/20 sec pulse
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TSD comparisonTSD comparisonTSD comparison
Effect on
normal op
TS
effectivenessDevice Rel cost Degradation
MOV Low High High Good
Excellent
Good
Moderate
SAD Moderate Low/mod Low
Moderate Low LowIon tube
Moderate Moderate HighFilter
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Electrical Engineering Department
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TSD comparisonTSD comparisonTSD comparison
MOV47 V 7400 V
SAD 500 V3 V
Gas tubes 700 V200 VDC
Clamp
Voltage
MOV 40 kA250 A
Peak
Current
SADGas tubes
1 A
80 kA2 kA
10 kA
South Dakota State University
Electrical Engineering Department
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Critical issues for transient suppressionCritical issues for transient suppressionCritical issues for transient suppression
South Dakota State University
Electrical Engineering Department
Proper device selectionneed to know what youre
protecting against. This is a problem for PV; DC-side
transients arent well specified.
Lead is criticalat transient frequencies, L dominates, not
R. Want very short, straight wires. (Story of our lives in
power electronics.)
TSDs do affect circuit designcapacitance of TSDs can be
significant. This is true for MOVs, less so for SADs.
Capacitors dont work well as TSDsespecially aluminumelectrolyticsbecause of their tendency to look more like
inductors at very high frequencies (ESL).
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UL and TSDsUL andUL and TSDsTSDs
South Dakota State University
Electrical Engineering Department
UL does list TSDs. Applicable standard: UL-1449.
UL suppression voltage ratings (SVRs) based on:
the average let-through voltage of two 6 kV
1.2/50m msec, 0.5 kA 8/20m msec impulses,
separated by a duty cycle test of ten 6 kV 1.2/50m
msec, 3.0 kA 8/20m msec impulses.
Also: IEEE-C62.41.1 and IEEE-C62.41.2standard
covering TVS in AC circuits of 1 kV or less
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Future trends in TSDsFuture trends inFuture trends in TSDsTSDs
South Dakota State University
Electrical Engineering Department
Doesnt appear to be a particularly active
area of research, but some developments
New materials
Selenium? (actually used in 1928!) Nanostructured materials?
New device structures based on
thyristors, cellular structures
Incremental performance improvements
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Future trends in TSDsFuture trends inFuture trends in TSDsTSDs
South Dakota State University
Electrical Engineering Department
Major issues remaining for TSD application:
Lead length: finding ways to minimize
inductance
End of life issues
SADs can fail open or shorted; monitoring?
Explosion protection Monitoring MOV degradation over time
Long-term energy absorption: GROUNDING
Preventing slow burn; thermal control
New structures with better long-term
properties?