usermanual.wiki...geirca signal transistors and rectifiers this data book provides detailed...

GE Solid State 8 ok

1\MD\I\l® ARROW ELECTRONICS, INC. ARROW/ KIERULFF ELECTRONICS GROUP

GE/RCA Signal Transistors and Rectifiers

GEIRCA Signal Transistors and Rectifiers

This DATA BOOK provides detailed technical information on the full line-morethan 200 device types-of GE/RCA small-signal bipolar semiconductor devices and silicon rectifiers. An Index to Devices provides a complete numeric-alpha-numeric listing of these devices. Definitive device ratings and characteristics are shown in three major data sections as follows:

Signal Transistors - a wide variety of n-p-n and p-n-p transistors, including Darlington types.

Unijunclion Transistors and Switches - Unijunction and programmable unijunction transistors and silicon unilateral and bilateral switches.

Silicon Rectifiers - Ultra-fast-recovery types, axial-lead general-purpose types, and full-wave bridge rectifiers.

A Dimensional Outlines and Hardware section provides details concerning the various packages in which the GE/RCA line of small-signal devices and rectifiers are supplied; and suggested hardware and mounting arrangements.

SE Solid State Somerville, NJ • Brussels • Paris • london • Munich • Hong Kong • Tokyo

Index to Devices

Signal Transistors

Unijunction Transistors and Switches

Silicon Rectifiers

Dimensional Outlines/Hardware ..

GE/RCA/lntersil Semiconductors

1

Table of Contents

Page Index to Devices............................................................... 3 Signal Transistors-Technical Data ............................... ,. ... ... . ... ... 7

NPN/PNP Transistor Selector Guides ................. , . . . . . . . . . . . . . . .. . . . . . . 8 Data....................................................................... 11

Unijunction Transistors and Switches-Technical Data. .. . ... . .. . .. . ... . . . . . ... . . . 101 Selector Guide .................................. , . .. . .... . ... .... ... . .... .. 102 Data....................................................................... 103

Silicon Rectifiers-Technical Data ....................................... , .. , . . . . 129 Selector Guides and Data ....... , ........................... , . .. . .. . . ... . .. . 130

Dimensional Outlines/Hardware ........... , ... , .. , . .. . ... ... .. . .. . .. . .. . ... ... .. 133

I nformation furnished by G E is believed to be accurate and reliable. However, no responsibility is assumed by GE or its affiliates for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of GE, RCA or Intersil.

Copyright 1987 by GE Corporation (All rights reserved under Pan-Amercian Copyright Convention)

Trademark(s)SRegistered Marca(s) Registrada(s) Printed in USAl12-87

2

Index to Devices Type No. Product File No. Page No.

lN4245 Axial-Ld Rectifier 2093 131 lN4246 Axial-Ld Rectifier 2093 131 lN4247 Axial-Ld Rectifier 2093 131 lN4248 Axial-Ld Rectifier 2093 131 lN4249 Axial-Ld Rectifier 2093 131

lN5059 Axial-Ld Rectifier 131 lN5060 Axial-Ld Rectifier 131 lN5061 Axial-Ld Rectifier 131 lN5062 Axial-Ld Rectifier 131 lN5624 Axial-Ld Rectifier 131

lN5625 Axial-Ld Rectifier 131 lN5626 Axial-Ld Rectifier 131 lN5627 Axial-Ld Rectifier 131 2N2646 Unijunction Transistor 2047 103 2N2647 Unijunction Transistor 2047 103

2N2923 Signal Transistor 2051 11 2N2924 Signal Transistor 2051 11 2N2925 Signal Transistor 2051 11 2N2926 Signal Transistor 2052 13 2N3390 Signal Transistor 2053 15

2N3391 Signal Transistor 2053 15 2N3391A Signal Transistor 2053 15 2N3392 Signal Transistor 2053 15 2N3393 Signal Transistor 2053 15 2N3394 Signal Transistor 2053 15


2N3858A Signal Transistor 2060 23 2N3859 Signal Transistor 2060 23 2N3859A Signal Transistor 2060 23 2N3860 Signal Transistor 2060 23 2N3903 Signal Transistor 2056 28



2N4403 Signal Transistor 2058 36 2N4424 Signal Transistor 2059 40 2N4870 Unijunction Transistor 1949 108 2N4871 Unijunction Transistor 1949 108 2N4987 Si Unilateral Switch 2049 115

2N4988 Si Unilateral Switch 2049 115 2N4989 Si Unilateral Switch 2049 115 2N4990 Si Unilateral Switch 2049 115 2N4991 Si Bilateral Switch 2048 111 2N4992 Si Bilateral Switch 2048 111

2N5172 Signal Transistor 2061 43 2N5232 Signal Transistor 2063 45 2N5232A Signal Transistor 2063 45 2N5249 Signal Transistor 2064 48 2N5249A Signal Transistor 2064 48

2N5305 Signal Transistor 2065 51 2N5306 Signal Transistor 2065 51 2N5306A Signal Transistor 2065 51 2N5307 Signal Transistor 2104 55 2N5308 Signal Transistor 2104 55

3

Index to Devices Type No. Product FileNo. Page No.

2N5308A Signal Transistor 2104 55 2N5365 Signal Transistor 2066 59 2N5366 Signal Transistor 2066 59 2N6027 Prg. Unij. Transistor 2050 122 2N6028 Prg. Unij. Transistor 2050 122

2N6076 Signal Transistor 2061 43 A14A Axial Ld Rectifier 131 A14C Axial Ld Rectifier 131 A14E Axial Ld Rectifier 131 A14F Axial Ld Rectifier 131

A14P Axial Ld Rectifier 131 A15A Axial Ld Rectifier 131 A15F Axial Ld Rectifier 131 A114A Axial Ld Rectifier 131 A114B Axial Ld Rectifier 131

A114C Axial Ld Rectifier 131 A114D Axial Ld Rectifier 131 A114F Axial Ld Rectifier 131 A114M Axial Ld Rectifier 131 A115A Axial Ld Rectifier 131

A115B Axial Ld Rectifier 131 A115C Axial Ld Rectifier 131 A115D Axial Ld Rectifier 131 A115E Axial Ld Rectifier 131 A115F Axial Ld Rectifier 131

A115M Axial Ld Rectifier 131 A214A Axial Ld Rectifier 130 A214B Axial Ld Rectifier 130 A214F Axial Ld Rectifier 130 A214G Axial Ld Rectifier 130

A315A Axial Ld Rectifier 130 A315B Axial Ld Rectifier 130 A315F Axial Ld Rectifier 130 A315G Axial Ld Rectifier 130 BYW51-100 UFR Rectifier 1412 130

BYW51-150 U FR Rectifier 1412 130 BYW51-200 UFR Rectifier 1412 130 DB1A Full-Wave Bridge Rectifier 2097 132 DB1B Full-Wave Bridge Rectifier 2097 132 DB1D Full-Wave Bridge Rectifier 2097 132

DB1F Full-Wave Bridge Rectifier 2097 132 DB1M Full-Wave Bridge Rectifier 2097 132 DB1N FUll-Wave Bridge Rectifier 2097 132 DB1P Full-Wave Bridge Rectifier 2097 132 GE1001 Axial Ld Rectifier 130

GE1002 Axial Ld Rectifier 130 GE1003 Axial Ld Rectifier 130 GE1004 Axial Ld Rectifier 130 GE1101 Axial Ld Rectifier 130 GE1102 Axial Ld Rectifier 130

GE1103 Axial Ld Rectifier 130 GE1104 Axial Ld Rectifier 130 GE1301 Axial Ld Rectifier 130 GE1302 Axial Ld Rectifier 130 GE1303 Axial Ld Rectifier 130

GE1304 Axial Ld Rectifier 130 GER4001 Axial Ld Rectifier 130 GER4002 Axial Ld Rectifier 131 GER4003 Axial Ld Rectifier 131 GER4004 Axial Ld Rectifier 131

GER4005 Axial Ld Rectifier 131 GER4006 Axial Ld Rectifier 131 GER4007 Axial Ld Rectifier 131 GES2218 Signal Transistor 2067 64 GES2218A Signal Transistor 2067 64

4


GES2219 Signal Transistor 2067 64 GES2219A Signal Transistor 2067 64 GES2221 Signal Transistor 2068 66 GES2221A Signal Transistor 2070 68 GES2222 Signal Transistor 2068 66

GES2222A Signal Transistor 2070 68 GES2646A Unijunction Transistor 2047 107 GES2647 Unijunction Transistor 2047 107 GES2904 Signal Transistor 2069 71 GES2904A Signal Transistor 2069 71

GES2905 Signal Transistor 2069 71 GES2905A Signal Transistor 2069 71 GES2906 Signal Transistor 2070 68 GES2906A Signal Transistor 2070 68 GES2907 Signal Transistor 2070 68

GES2907A Signal Transistor 2070 68 GES3414 Signal Transistor 2054 19 GES3415 Signal Transistor 2054 19 GES3416 Signal Transistor 2054 19 GES3417 Signal Transistor 2054 19

GES5305 Signal Transistor 2065 51 GES5306 Signal Transistor 2065 51 GES5306A Signal Transistor 2065 51 GES5307 Signal Transistor 2104 55 GES5308 Signal Transistor 2104 55

GES5308A Signal Transistor 2104 55 GES5401 Signal Transistor 2094 73 GES5551 Signal Transistor 2094 73 GES5810 Signal Transistor 2095 75 GES5811 Signal Transistor 2095 75

GES5812 Signal Transistor 2095 75 GES5813 Signal Transistor 2095 75 GES5814 Signal Transistor 2096 78 GES5815 Signal Transistor 2096 78 GES5816 Signal Transistor 2096 78

GES5817 Signal Transistor 2096 78 GES5818 Signal Transistor 2096 78 GES5819 Signal Transistor 2096 78 GES6027 Prg. Unij. Transistor 2050 122 GES6028 Prg. Unij. Transistor 2050 122

GET4870 Unijunction Transistor 1949 108 GET4871 Unijunction Transistor 1949 108 MPS2906 Signal Transistor 2070 68 MPS2906A Signal Transistor 2070 68 MPS2907 Signal Transistor 2070 68

MPS2907A Signal Transistor 2070 68 MPS2222 Signal Transistor 2068 66 MPS2222A Signal Transistor 2070 68 MPS3638 Signal Transistor 2078 82 MPS3638A Signal Transistor 2078 82

MPS5172 Signal Transistor 2061 43 MPS6531 Signal Transistor 2079 84 MPS6532 Signal Transistor 2079 84 MPS6534 Signal Transistor 2079 84 MPS-A05 Signal Transistor 2072 86

MPS-A06 Signal Transistor 2072 86 MPS-A12 Signal Transistor 2073 89 MPS-A13 Signal Transistor 2074 91 MPS-A14 Signal Transistor 2074 91 MPS-A42 Signal Transistor 2075 92

MPS-A43 Signal Transistor 2075 92 MPS-A55 Signal Transistor 2072 86 MPS-A56 Signal Transistor 2072 86 MPS-A63 Signal Transistor 2076 94 MPS-A64 Signal Transistor 2076 94

5


MPS-A65 Signal Transistor 2077 96 MPS-A92 Signal Transistor 2075 92 MPS-A93 Signal Transistor 2075 92 MPS-L01 Signal Transistor 2071 98 MPS-L51 Signal Transistor 2071 98

MUR-810 UFR Rectifier 1355 130 MUR-815 UFR Rectifier 1355 130 MUR-820 UFR Rectifier 1355 130 MUR-840 UFR Rectifier 2091 130 MUR-850 UFR Rectifier 2091 130

MUR-860 UFR Rectifier 2091 130 MUR-1610CT UFR Rectifier 1885 130 MUR-1615CT UFR Rectifier 1885 130 MUR-1620CT UFR Rectifier 1885 130 PN2222 Signal Transistor 2068 66

PN2222A Signal Transistor 2070 68 PN5172 Signal Transistor 2061 43 RUR-D1610 UFR Rectifier 1383 130 RUR-D1615 UFR Rectifier 1383 130 RUR-D1620 UFR Rectifier 1383 130

6 ________________________________________________________________ __

Signal Transistors Technical Data

___________________________________ 7

Signal Transistors

N-P-N Signal Transistor Selector Guide Ie VCBRICEO

[Max.] [Min.] Beta Range Type Structure mA V hFE Package FileNo. Page

2N3390 n-p-n 100 18 400-800 TO-98 2053 15 2N2923 n-p-n 100 25 115Typ. TO-98 2051 11 2N2924 n-p-n 100 25 155 Typ. TO-98 2051 11 2N2925 n-p-n 100 25 215 Typ. TO-98 2051 11 2N2926 n-p-n 100 25 35-470 TO-98 2052 13

2N3391 n-p-n 100 25 250-500 TO-98 2053 15 2N3391A n-p-n 100 25 250-500 TO-98 2053 15 2N3392 n-p-n 100 25 150-300 TO-98 2053 15 2N3393 n-p-n 100 25 90-180 TO-98 2053 15 2N3394 n-p-n 100 25 55-110 TO-98 2053 15

2N5172 n-p-n 100 25 100-500 TO-98 2061 43 MPS5172 n-p-n 100 25 100-500 TO-92 2061 43 PN5172 n-p-n 100 25 100-500 TO-92 2061 43 2N3858 n-p-n 100 30 60-120 TO-98 2060 23 2N3859 n-p-n 100 30 100-200 TO-98 2060 23

2N3860 n-p-n 100 30 150-300 TO-98 2060 23 2N5232 n-p-n 100 50 250-500 TO-98 2063 45 2N5232A n-p-n 100 50 250-500 TO-98 2063 45 2N5249 n-p-n 100 50 400-800 TO-98 2064 45 2N5249A n-p-n 100 50 400-800 TO-98 2064 45

2N385BA n-p-n 100 60 60-120 TO-98 2060 23 2N3859A n-p-n 100 60 100-200 TO-98 2060 23 MPS-L01 n-p-n 150 120 50-300 TO-92 2071 98 2N4124 n-p-n 200 25 120-360 TO-92 2057 32 2N4123 n-p-n 200 30 50-150 TO-92 2057 32

2N3903 n-p-n 200 40 50-150 TO-92 2056 28 2N3904 n-p-n 200 40 100-300 TO-92 2056 28 2N5305 n-p-n 300 25 2K-20K TO-98 2065 51 2N5306 n-p-n 300 25 7K-70K TO-98 2065 51 GES5305 n-p-n 300 25 2K-20K TO-92 2065 51

GES5306 n-p-n 300 25 7K-70K TO-92 2065 51 GES5306A n-p-n 300 25 7K-70K TO-92 2065 51 2N5306A n-p-n 300 40 7K-70K TO-98 2065 51 2N5307 n-p-n 300 40 2K-20K TO-98 2065 51 2N5308 n-p-n 300 40 7K-70K TO-98 2104 55

2N5308A n-p-n 300 40 7K-70K TO-98 2104 55 GES5307 n-p-n 300 40 2K-20K TO-92 2104 55 GES5308 n-p-n 300 40 7K-70K TO-92 2104 55 GES5308A n-p-n 300 40 7K-70K TO-92 2104 55 GES2221 n-p-n 400 30 40-120 TO-92 2068 66

GES2222 n-p-n 400 30 100-300 TO-92 2068 66 MPS2222 n-p-n 400 30 100-300 TO-92 2068 66 PN2222 n-p-n 400 30 100-300 TO-92 2068 66 GES2221A n-p-n 400 40 40-120 TO-92 2070 68 GES2222A n-p-n 400 40 100-300 TO-92 2070 68

MPS2222A n-p-n 400 40 100-300 TO-92 2070 68 PN2222A n-p-n 400 40 100-300 TO-92 2070 68 2N3414 n-p-n 500 25 75-225 TO-98 2054 19 2N3415 n-p-n 500 25 180-540 TO-98 2054 19 GES3414 n-p-n 500 25 75-225 TO-92 2054 19

GES3415 n-p-n 500 25 180-540 TO-92 2054 19 MPS-A12 n-p-n 500 20 20K Min. TO-92 2073 89 MPS-A13 n-p-n 500 30 5K Min. TO-92 2074 91 MPS-A14 n-p-n 500 30 10K Min. TO-92 2074 91 2N4424 n-p-n 500 40 180-540 TO-92 2059 40

2N3416 n-p-n 500 50 75-225 TO-92 2054 19 2N3417 n-p-n 500 50 180-540 TO-92 2054 19 GES3416 n-p-n 500 50 75-225 TO-92 2054 19 GES3417 n-p-n 500 50 180-540 TO-92 2054 19 MPS-A05 n-p-n 500 60 50 Min. TO-92 2072 86

MPS-A06 n-p-n 500 80 50 Min. TO-92 2072 86 MPS-A43 n-p-n 500 200 50-200 TO-92 2075 92 MPS-A42 n-p-n 500 300 40 Min. TO-92 2075 92 MPS6532 n-p-n 600 30 30 Min. TO-92 2079 84 2N4400 n-p-n 600 40 50-150 TO-92 2058 36

8

Signal Transistors

N-P-N Signal Transistor Selector Guide Ie VIBRICEO

[Max.] [Min.] Beta Range Type Structure mA V hF• Package FileNo. Page

2N4401 n-p-n 600 40 100-300 TO-92 2058 36 MPS6531 n-p-n 600 40 40-120 TO-92 2079 84 GES5551 n-p-n 600 160 80-250 TO-92 2094 73 GES5810 n-p-n 750 25 60-200 TO-92 2095 75 GES5812 n-p-n 750 25 150-500 TO-92 2095 75

GES5814 n-p-n 750 40 60-160 TO-92 2096 78 GES5816 n-p-n 750 40 100-200 TO-92 2096 78 GES5818 n-p-n 750 40 150-300 TO-92 2096 78 GES2218 n-p-n 800 30 35 Min. TO-92 2067 64 GES2219 n-p-n 800 30 35 Min. TO-92 2067 64

GES2218A n-p-n 800 40 75 Min. TO-92 2067 64 GES2219A n-p-n 800 40 75 Min. TO-92 2067 64

P-N-P Signal Transistor Selector Guide Ie V1BRICEO

[Max.] [Min.] Beta Range Type Structure mA V hF• Package FileNo. Page

2N6076 p-n-p -100 -25 100-500 TO-98 2061 413 2N4126 p-n-p -200 -25 120-360 TO-92 2057 32 2N4125 p-n-p -200 -30 50-150 TO-92 2057 32 2N3905 p-n-p -200 -40 50-150 TO-92 2056 28 2N3906 p-n-p -200 -40 100-300 TO-92 2056 28

MPS-A63 p-n-p -300 -30 5K Typ. TO-92 2076 94 MPS-A64 p-n-p -300 -30 10K Typ. TO-92 2076 94 MPS-A65 p-n-p -300 -30 50K Min. TO-92 2077 96 2N5365 p-n-p -300 -40 40-120 TO-98 2066 59 2N5366 p-n-p -300 -40 100-300 TO-98 2066 59

MPS3638 p-n-p -350 -25 30 Min. TO-92 2078 82 MPS3638A p-n-p -350 -25 100 Min. TO-92 2078 82 GES2906 p-n-p -350 -40 40-120 TO-92 2070 68 GES2907 p-n-p -350 -40 100-300 TO-92 2070 68 MPS2906 p-n-p -350 -40 40-120 TO-92 2070 68

MPS2907 p-n-p -350 -40 100-300 TO-92 2070 68 GES2906A p-n-p -350 -60 40-120 TO-92 2070 68 MPS2906A p-n-p -350 -60 40-120 TO-92 2070 68 GES2907A p-n-p -350 -60 100-300 TO-92 2070 68 MPS2907A p-n-p -350 -60 100-300 TO-92 2070 68

MPS-A55 p-n-p -500 -60 50 Min. TO-92 2072 86 MPS-A56 p-n-p -500 -80 50 Min. TO-92 2072 86 MPS-A93 p-n-p -500 -200 30-150 TO-92 2075 92 MPS-A92 p-n-p -500 -300 30 Min. TO-92 2075 92 2N4402 p-n-p -600 -40 50-150 TO-92 2058 36

2N4403 p-n-p -600 -40 100-300 TO-92 2058 36 GES2904 p-n-p -600 -40 40-120 TO-92 2069 71 GES2905 p-n-p -600 -40 100-300 TO-92 2069 71 MPS6534 p-n-p -600 -40 40-120 TO-92 2079 84 GES2904A p-n-p -600 -60 40-120 TO-92 2069 71

GES2905A p-n-p -600 -60 100-300 TO-92 2069 71 MPS-L51 p-n-p -600 -100 40-250 TO-92 2071 98 GES5401 p-n-p -600 -150 60-240 TO-92 2094 73 GES5811 p-n-p -750 -25 60-200 TO-92 2095 75 GES5813 p-n-p -750 -25 150-500 TO-92 2095 75

GES5815 p-n-p -750 -40 60-160 TO-92 2096 78 GES5817 p-n-p -750 -40 100-200 TO-92 2096 78

9

_____________________________ Signal Transistors

2N2923,2N2924,2N2925

Silicon Transistors

TO-98

The GE/RCA 2N2923, 2N2924, and 2N2925 types are planar passivated NPN silicon transistors intended for general purpose applications. The planar passivated construction assures excellent device stability and life. These high

MAXIMUM RATINGS, Absolute-Maximum Values:

performance, high vaiue devices are made possible by utilzing advanced manufacturing techniques and epoxy encapsulation.

These types are supplied in JEDEC TO-98 package.

Devices in TO-98 package are supplied with and without seating flange (see Dimensional Outline).

COLLEClOR 10 EMITTER VOLTAGE (VCEO) ........................................................................... 25 V EMITTER 10 BASE VOLTAGE (VEBO ................................................................................... 5 V COLLEClOR 10 BASE VOLTAGE (V CBO) .............................................................................. 25 V CONTINUOUS COLLECTOR CURRENT (Note I) ...................................................................... 100 mA lOTAL POWER DISSIPATION (T A ~ 25°C)(PT)(Note 2) ................................................................ 360 mW lOTAL POWER DISSIPATION (T A ~ 55°C)(PT)(Note 2) ................................................................ 250 mW OPERATINGTEMPERATURE(TJ) ......................................................................... -55°to +150°C SlORAGE TEMPERATURE (Tstgl .......................................................................... -55°to +150°C LEAD TEMPERATURE, 1/1s" ± 1/32" (1.5mm ± 0.8mm) from case for lOs max. (T U ........................................... + 260°C

NOTES: 1. Determined from power limitations due to saturation voltage at this current. 2. Derate 3.6 mW/oC increase in ambient temperature above 25°C.

File Number 2051

11

Signal Transistors ____________________________ _

2N2923,2N2924,2N2925

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (TA) = 2S·C Unless Otherwise Specified

CHARACTERISTICS SYMBOL

Collector Cutoff Current (VCB = 25V) ICRO (VCB = 25V, TA = 100·C) ICBO

Emitter Cutoff Current (VFRO = 5V) IEBO_ DC Forward Current Transler Ratio (VeE = 4.5V, Ie = 2 rnA) hFE

2N2923

2N2924

2N2925

Small-Signal Forward Current Transler Ratio (VCE = 10V, Ic = 2 rnA, I = 1kHz) h'e

2N2923

2N2924

2N2925

Input Impedance (VCE = 10V, Ic = 2 rnA, I = 1kHz) hfb

Gain Bandwidth Product (IC = 4 rnA, V CB = 5V) 'T Noise Figure (Ie = 100"A, V CE = 5V, I = 10kHz,

BW = 1 Hz, Rg = 200012) For 2N2925 only NF

Collector Capacitance (V CB = 10 V, IE = 0, I = 1 MHz) Ccbo

TERMINAL CONNECTIONS

Lead 1 - Emitter Lead 2 - Collector Lead3-Base

LIMITS

2N2923,2N2924,2N292S

MIN. TYP. MAX

- - 0.1

- - 15

- - 0.1

- 115 -- 155 -- 215 -

90 - 180

150 - 300

235 - 470

- 15 -- 160 -

- 2.8 -4.5 7 10

UNITS

"A

---

---12

MHz

dB

pF

12 _______________________________________________________________ _


2N2926

Silicon Transistors

I TO-98

The GE/RCA2N2926 is a planar passivated NPN silicon transistor intended for general purpose applications. The planar passivated construction assures excellent device stability


and life. This high performance, high value device is made possible by advanced manufacturing techniques.

This type is supplied in JEDEC TO-98 package.


COLLECIOR 10 EMITTER VOLTAGE (VCEO) ........................................................................... 25 V EMITTER 10 BASE VOLTAGE (VESel ................................................................................... 5 V COLLECIOR 10 BASE VOLTAGE (V cw .............................................................................. 25 V CONTINUOUS COLLECIOR CURRENT (lc)(Note 1) .................................................................. 100 mA IOTAL POWER DISSIPATION (T A ,;; 2S 0 C)(PT)(Note 2) ................................................................ 200 mW IOTAL POWER DISSIPATION (T A ,;; 55°C)(PT)(Note 2) ................................................................ 120 mW OPERATING TEMPERATURE (TJ) ......................................................................... -55·to +100·C SIORAGE TEMPERATURE (T STG) ......................................................................... - 55· to + 150·C LEAD TEMPERATURE, 1/16" ± 1/32" (1.58mm ± 0.8mm) from case for lOs max (T u .......................................... + 260·C

NOTES: 1. Determined from power limitations due to saturation voltage at this current. 2. Derate 2.67mW/·C increase in ambient temperature above 25·C.

File Number 2052

13


2N2926

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (T A) = 25°C Unless Otherwiae Specified


Collector Cutoff Current (VeB = 18V) ICBO (Vr.R = 18V,T = 100·C leBO

EmitterCutoffCurrent(VEB = 5V) lEBO Small·Signal Forward Current Transfer Ratio

(Vee = 10V,Ie = 2mA,f = 1Hz) h'e Inputimpedance(VCE = 10V,1e = 2ma,f = 1Hz) hib

Gain Bandwidth Product (Ie = 2mA, V CB = 5V 'T Collector CapaCitance (Vr.R = 10V,I~ = 0, I = 1 MHz) Cob

14


Lead 1 - Emiller Lead 2 - Colleclor Lead 3 - Base

LIMITS

MIN. TYP.

- -- -- -35

- 15

- 120

4.5 7

MAX. UNITS

0.5

15 "A 0.5

470 -- Q

- MHz

10 pF

---------------------________ Signal Transistors

2N3390-94, 2N3391A

Silicon Transistors

I TO-98

The GE/RCA 2N3390-94, 2N3391A are planar, passivated NPN silicon transistors designed for use in general-purpose

and high gain amplifier or driver applications. These types are supplied in JEDEC TO-98 package.



COLLECIOR 10 EMITTER VOLTAGE (VeEO) .. EMITTER 10 BASE VOLTAGE (VEBc) .. COLLECTOR TO BASE VOLTAGE (VeBc) ..... . CONTINUOUS COLLECTOR CURRENT (Ie) .... . IOTAL POWER DISSIPATION (T A S 25°C) (PT) .. IOTAL POWER DISSIPATION (T e S 25°C) (PT) ...... . DERATE FACTOR (TA > 25°C) ...... . DERATE FACTOR (T e > 25°C). . . . . . . . . . . . . . . . . ......................... . OPERATING TEMPERATURE (TJ ) . . . . .......... . SIORAGE TEMPERATURE (T STG)' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ........ . LEAD TEMPERATURE, 1116" ± 11'32" (1.5Bmm ± O.Bmm) from case for las max (T Ll ...... .

. ...... 25V .. ......... 5V

.25V .100mA

. 350mW .IW

.2.BmW/oC . .BmW/oC

. ........... -55° to + 150°C " -55° to + lS00C

.. ..... + 260°C

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (T A) = 25°C Unless Otherwise Specified

LIMITS

CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS

Collector-Emitter Breakdown Voltage (Ie = 1 rnA, IB = 0) BVeEO 25 - -Collector-Base Breakdown Voltage (Ie = O.lI'A, 'E = 0) BIica!L 25 - - V

ColiectorCutofl Current (VCR = lBV, IE = 0) ICBO - - 0.1

EmitterCutoflCurrent(VEB = 5V,Ie = 0) 'EBO 0.1 I'A - -

DC Forward Current Transfer Ratio (Ic = 2mA, V CE = 4.5V) 3390 400 - BOO

3391,3391A 250 - 500

3392 hFE 150 - 300 -3393 90 - lBO

3394 55 - 110

Output CapacHance (VCB = 10V, 'E = 0, f = 1 MHz) Cob - 2 10 pF

Noise Figure (Ie = 100~, VCF = 4.5V, R~ = 5000Q)For2N3391Aonly NF - 1.9 S dB

File Number 2053

----________________________________________________________ 15


2N3390-94, 2N3391 A

350 COLLECTOR-TO-EMITTER VOLTAGE IVCEI·4.5 V

It AMBIENT TEMPERATURE (TA 1= 25·C I--

V' .=300

V ~ V 0:

~ 250

/~ UI z .. ~ 200

V I-

~ Z ... 0:

§ 150 u

V-0 a:

V ; ~ 100

V u 0

50 2 • • • 2 • • • 2 • • • 2

0.01 0.1 10 COLLECTOR CURRENT ('c)-rnA

92CS-42683

Fig. 1 - Typical dc forward current transfer ratio characteristic for 2N3391 and 2N3391A.

.. 2 I hFE NORMALIZED AT

~ ~ Ie'" 2 mAo TA '" 2SD C, t IC,Or mA \ .. Z c.o.,mt~ c 0:

~ 1.5 I Ic=<2mA

...

V ~ 0: .. -"", uJ!' ./ D-

~ 2 1

/: :I :c .. 0:

Ii! V u I D ...,,- I D a5 ...

" I N ::; c I :Ii .. I D z 0 I

- -40 20 0 20 40 60 BO 100 AMBIENT TEMPERATURE (TAl-·C

92CS-42&83

Fig. 3 - Normalized de forward current transfer ratio characteristics for 2N3391 and 2N3391A.

... ,cnB' 20 co AMBIENT TEMPERATURE (T A) • 25· C

~ 2

§! V z 1 0 • ~ • 1,/ !§> 4 1-' V :Ii ..... 2

~~ --./

!O.'. -.:. • ~ • Ii ... 2 ::j D UO-01

• • • • • •• 2 • • • 0.1 1 10 100

COLLECTOR CURRENT (IC) - mA 92CS-4272I

Fig. 5 - Typical collector-to-emitter saturation voltage characteristic for 2N3392, 2N3393, and 2N3394.

16

_ 240 I t ~~~ r--0200

~ ...,,-.. ~ II!

~ 160

rt .. V --z c ,.../ .. ~ 12 -- ~",., .. z ~ -... P"-.. ...-..

" 80 --u V D .. c

:I 40 0: D ..

COLLECTOR-TO-EMITTER VOLTAGE (VeE) '" 5 V U D 0

AMBIENT TEMPERATURE (T A) = 25° C

2 • • • 2 • 6 81b 2 4 •• 0.1 1 10 o

COLLECTOR CURRENT (Ie) - mA

92C$-427tl

Fig. 2 - Typical dc forward current transfer ratio characteristic for 2N3392, and 2N3393, and 2N3394.

.. 4 COLLECTOR-TO-EMITTER VOLTAGE (VeE) = 5 y

$ hFE NORMALIZED AT Ie '" 2 mA, T A" 2S"C

~ -.. ...

~ 2 .. f-0: -" f---U_

f---'W 0 .. ./ .. " ./ c-V :12

"l- I OC .... ...,,- I u D • V D I ... V N I ::; • c :Ii

0-I .. I D

Z 0.1 I

-40 -20 o 20 40 60 80 100

AMBIENT TEMPERATURE (TA)· "C 92CS-427'~

Fig. 4 - Normalized de forward current transfer ratio characteristics for 2N3392, 2N3393, and 2N3394.

lellB = 20 V' w AMBIENT TEMPERATURE (TA) = 25°C

~ 0.8 ,/ ~ / > z

V ~ § 0.7

~~ /V '"= 151. V I:u i~ '¥ 0.6

~ V /"" w ~ •

0

• • • 2 • •• 2 • •• 0.1 I 10 Ie>

COLLECTOR CURRENT (lC) - mA 92C9-427"

Fig. 6 - Typical base-to-emitter voltage characteristic for 2N3392, 2N3393, and 2N3394.

_______________________________ Signal Transistors

COLLECTOR-TO-BASE VOLTAGE (Yea) = 1. Y

... 10 /

z • .. • a: / a: :> • U

bL It ~~ 2

~-~ ... --U_ .. 0 / ~~1 I---.,=- 8 0 • l;- V a: • 0

/ I; .. :j 2 0 U

I I I I I I o 20 40 60 80 100 '20 '40

AMBIENT TEMPERATURE {TAl - "e 92CS- 42720

Fig. 7-Typical collector-to-base cutoff current characteristic for 2N3391, 2N3391A, 2N3392, 2N3393, and 2N3394.

500 COLLECTOR-lO-EMITTER VOLTAGE IVCE)=10V

II: .. f ~ , kHz

"" .. AMBIENT TEMPERATURE ITA I = 2S·C z 400 ~ V ... /'" z

~::300 ,,~

V u-..J~ ..... V z .. ~a:200 ..J V ..J

/ .. '" 100 UI

/ 0

0.01 Z 4 • • 0.1

4 •• 4 •• 1

COLLECTOR CURRENT (ICI-mA 92C$-42684

I--

'0

Fig. 9-Typical small-signal transfer ratio characteristic for 2N339.1 and 2N3391 A.

'\ \. l \'

I 68 2468 2 • ••

COLLECTOR CURRENT (Ie) - pA 92es- 42688

Fig. 11-Typical contours of constant noise figure for 2N3391 and 2N3391A.

2N3390-94, 2N3391A

0.8 BASE·TO·EMITTER VOLTAGE (YBE) - 5 V AMBIENT TEMPERATURE (TA)· 2S"C ~;::: I

=: 2N'r94 i', ~~ iii 2N3313

~ 0.7

2J338Z ~ .. ~:::: " :! 6

~ ~V > a:

0.6 W

I: ~ ~~ i k:::::;

:1: ~

V .. : 0.5

z 4 • • Z 4 •• Z • •• 0.' I 10 100 COLLECTOR CURRENT (IC) - InA

92CS-42711

Fig. 8 - Typical base-to-emitter voltage characteristic for 2N3392, 2N3393, and 2N3394.

280 AMBIENT TjMjEiA,URE (TA) '" 25°C

[240 -0

J.L~--~ a:: 200 -g~\\.' ~ ~I---!ll /"'~~ J,I~, .. ) --~ ~~~' /'" <C 160

~ ~- ~\. , -\~1 '/.'i-~';/ ~3l'jl

~ 120 _ .,I.,~"')~::::--::V I-::;:;:;tl. -\ ~ ... ) ,. 2,,33" l'-13 ~,,~r- ..... r---

~ 80

~ Vk y.-" Oi -' 40

;;I

'" 0 ., Z

0.1 4 6 • Z 4 6 • Z

10 COLLECTOR CURRENT (I C) = mA

• 6 •

92CS-4Z7J3

100

Fig. 10- Typical small-signal currsnt tansfer ratio characteristic for 2N3392, 2N3393, and 2N3394.

19

1\ 17

'a

"" ,,"'

?,'O15

I'" '0'8

:\.\ :!!~ ~~13 Wz

" U c c-z ... ~~11

"" U .. ~~ c-

........ c ... C1s 9 ..... " i!!; r- "-!o 7 f::z 1MHz

5 AMB'fNT TErpEf~ATURE (TAl ~ 25'C

Z • 2 • • • 0.1 . . \ 10

BASE-TO-EMITTER YOLTAGE (YBE) - Y COLLECTOR-TO-BASE YOLTAGE (Yca) - Y

92CS-42rll

Z •

Fig. 12 - Typical input, output capacitance characteristics for all types.

17


2N3390-94, 2N3391A

18

AMBIENT TEMPERATURE (TA) = HOC rl COLLECTOR-TO-EMITTER VOLTAGE (YeE) = 5 y~ I dJ

0.1 OPTIMUM SOURCE RESISTANCE (R,), AI - ~ i.\ · '. f'F~ 6 ~ • I~ ~ <; , • • ~

~ 1// J~ 2 1 ~ 2 .... n:;; If

=0.0, ~- ~.1 oi ~ 8. "/\.1!.'.~.Q 6 Z .. 'K~('."",,,,, ~ ,., ..... .. ~ ,tl:: ~r:.:~~JE~f,1~~~·-~~~t::l:::t:tld4 i 21=",*~+--,I~r. .... \ 2 u - 1'1~1 0.001

4 •• 0.01

EMITTER CURRENT (IE) - mA

0.01 . .. .0

Fig. 13-Equivalent input noise-voltage and noise-current characteristics for 2N3392. 2N3393, and 2N3394.


Lead 1 • Emitter Lead 2 • Collector Lead 3· Base


2N3414-17, GES3414-17

II Silicon Transistors

TO-92 1'0-98

The GE/RCA Types 2N3414-17 and GES3414-17 are planar epitaxial passivated NPN silicon transistors intended for general purpose industrial circuits. These transistors are especially suited for high level linear amplifiers or medium

speed switching circuits in industrial control applications. These types are supplied in JEDEC TO-92 package (GES3414-17) and in JEDECTO-98 package (2N3414-17).



2N3414,15 GES3414,15

2N3416,17 GES3416,17

COLLEClOR 10 EMITTER VOLTAGE (VCEel. .. .. . . .. . .. . . . . .. . . . . . . . . . . .. . . . . . .. . . .. . . .. . . . .. . . .. . 25 EMITTER TO BASE VOLTAGE (VEBel. . . . . . . . . .. . . . . . . .. . . .. . . .. .. . .. . . .. . . .. . . . . . .. . . .. . . . .. . . .. . 5 COLLEClOR 10 BASE VOLTAGE (Vcsel. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 CONTINUOUS COlLEClOR CURRENT (lc)(Note 1) . .. . . .. . . .. . . .. . . .. . .. . . . . . . . . . . . .. . . .. . . .. . . .. . 500 lOTAl POWER DISSIPATION (T A ::s; 25·C)(PT)(Note 2) ............................................. . lOTAl POWER DISSIPATION (T A::S; 65·C)(PT)(Note 2) ............................................. . OPERATINGTEMPERATURE(TJ) .............................................................. .

360 260

-55to +150

50 V 5 V 50 V

500 mA mW mW ·C

SlORAGE TEMPERATURE (T STGl .............................................................. . - 55· to + 150·C lEAD TEMPERATURE, 1116" ± 1132" (1.58mm ± 0.8mm) from case for lOs max (T J ........................ . +260

NOTES: 1. Determined from power limitations due to saturation voltage atthis current. 2. Derate 7.2mW/·C increase in case temperature about 25·C.

File Number 2054

19

Signal Transistors

2N3414-17, GES3414-17

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (TAl = 25·C Unless Otherwise Specified


Collector Cutoff Current (VCB = 25V)

ICBO (VCR = 25V, T A = 100·C)


(VCR = 50V, T = 100·C) ICBO

Emitter Cutoff Current (VEB = 5V) lEBO Collector Saturation voltage (IB = 3mA, Ic = SOmA) VCElSAll Base Saturation Voltage (IR = 3mA, Ic = 50mA) VRF(!'lATl

-DC Forward Current Transfer Ratio

(VCE = 4.5V,IC = 2mA) hFE Small·Signal Forward Current

Transfer Ratio (VCE = 4.5V, f = 1 kHz) hfe

-Small·Signal Forward Current Transfer Ratio

(lice = 10V;~ = 1 mA; f = 1Hz) hfe_

Input Impedance hie Output Admittance hoe Voltage Feedback Ratio h'EL

a: COLLECTOR· TO·EMITTER VOLTAGE (VCE) ~ 5 V .. 400 AMBIENT TEMPERATURE (T A) ~ l00'C I--.. ~Mi -In

Z C a: ~"'!11T t:' 300 .. - ,/ ~~ ... ,~ - \ z .. .... ~e /f-- ..--- I\. 1\ lJ~200 OC V k-" a: a:

~ ,

a: 200 ~ u 0

2 4 •• 2 4 •• 2 4 • ~bo 2 4 ••

0.1 to to 00

COLLECTOR CURRENT (Ic) • mA

92CS-427S0

Fig. 1-Typical de forwarcJ.current transfer ratio characteristics.

~ ~ COLLECTOR·TO·EMITTER VOLTAGE (VCE) ~ 5 V

2 COLLECTO-:LC~RR~NT (I =2mA ,.a: ..

1..- r a:~11 ,.--f~~ --,..... g~~ ~ I-

..-1

fiJ!E-w • ,....-!::!wu. ...... ~I:S ,.... 11:>0 • ~~~ Z a:

• -40 -20 o 20 40 60 80 tOO

AMBIENT TEMPERATURE (T A) - <:> C

Fig. 3 - Normalized de forward current transfer ratio characteristic.

20

LIMITS

3414,5 3416,7 UNITS

MIN. MAX. MIN. MAX

- 0.1 - -- 15 - -

- - - 0.1 ,..A

- - - t5

- 0.1 - 0.1

- 0.3 - 0.3 V - 0.85 - 0.85

3414,6 3415,7 -75 225 180 540 -75 180 -

3414,15 3416,17 -

180 330 150 300 -5100 9000 4200 8300 Q

14 21 10 20 ,..mhos

0.27 0.45 0.2 0.4 X 10·3

o 468 2 468 468 2 4 68

0.1 1 10 100 1000 COLLECTOR CURRENT (lc) • mA

92CS-42751

Fig. 2-Typical dc forward-current transfer ratio characteristics .

..'pIIS ~ 20

a: 1000 .. .. 1:" -i~ &~=e I-.... z .600

~2~ I-t;:~400 r-~~ ~ I--

0 2

0·1

AMIIEJIIT :rEIIlPE TUR (TAl ~ l00'C

'III ~

P"TA ~25'C 4 •• 2 4 •• 2 4 •• 2 ••• 1 to 100

COLLECTOR CURRENT (IC) • mA 92CS-42754

.000

Fig. 4 - Typical co/lector·to-emitter saturation voltage characteristics.

~CIIB=20

600 a: r- I "'"' 1:" _e is!:i> r-OeE 400

AMBIENT TEMPERATURE (TA) = l00"C / ~~~ r-e~'a. l- i'- VI ~~~ 8= I- ~ jI\

0 rili 2 ... 2 ••• ...

·,00 0.1 I 10 1 0 a COLLECTo.R CURRENT (IC) - mA

92CS- 42752

Fig. 5-Typical collactor-Io-flmitter saturation voltage characteristics.

'a 'L'

~l "U 2:~ "'z u e z ... ~9 u .. :e e U u'" S~ !8

~~ f= 1 MHz .1 .• ~ I ,I, .L K - AMBIE~T TEMPERATURE (T A) = 25"C-

26 r-... 24 ,,~

22

20 I'{",(

"J);~ .8 r-~

16 ~ 14

r--...... c 12

~ """4! 10

8"':::: 1"- ... c J ---..:;...~,~ ~a.,. J. 1'-.--I---

6

4 2

4

'~1V3"~) ~

• 8 2 • • • • 10

Co.LLECTOR-TO-BASE YOLTAGE (Yca) - Y EMITTER-TO-BASE YOL TAGE (YEB) - Y

2 •

9ZCS-4276.

Fig. 7- Typical input and output capacitance characteristics.

0.1 4 6 8 , 4 6 8'0

COLLECTOR CURRENT (lc) - mA

4 • 8 .00

92C9-42763

Fig. 9- Typical gain-bandwidth product characteristics; and small-slgnal current transfer ratio characteristic for 2N3416. 2N3417, GES3416andGES3417.

Signal Transistors

2N3414-17, GES3414-17

1000 COLLECTOA-TO-EMITTER VOLTAGE (YCE) = lOY I I I I

AMBIENT TEMPERATURE (TA) '" 25°C

I 80

e ~ U ;- 600

/ z "' a:

/ a:

" U 400 a:

/ 0. ... U

j 0 200 U

I 0 lJ

0.2 0·4 0.6 0.8 1.2 1.4 COLLECTOR-TO-BASE VOLTAGE (VBE) - v

92CS-42753

Fig. 6- Typical collector current characteristics.

:l!

"' ~

20

0. > .6 a: "' ~> ~ "2 ",-

o~ I;-~ a: 0. ... U

"' ::! 0 U

8

4

0 I

0·1

:I! .. ~ t; " Q 0 a: .. " ... Q

i Q z e ~ c "

g-~ ~~g"~~-~~:i--l--I- ~~1 N a: CD ........ :!_ .... IiII:IN I 100~ II In z I e , , a:

80 ... ,\ \ ...

~l \ \ 60 a:::5. \\ \ .>" G2 \

E:! ...... ~~

ee 40 ~II:

\ \ :I!u

3~ ~ Ii. hrf , 20.;!

-\' \ "--V :I! .. + ....... I'-- 0 4681 4681 4681

1 10 100 COLLECTOR CURRENT (IC) - mA

92C5-42762

Fig. 8-Typical gain-bandwidth product characteristics; and sma/~signal current transfer ratio characteristic for 2N3414, 2N3415, GES3414 and GES3415.

e ~ ~ ... z w a: a:

" U a: 0 t; j 0 0

240 I.~"'~"""

(TA) = 'S"C

~/ - l--I-200

"" ....... - - l-

1/ --- l-I-.60

/ ----1/ ----120 / 1/ 80

I-J

40

0 BASE CURRENT (1&) = 0.1 mA

o 4 6 7 8 9 10 COLLECTOR-TO-EMITTER VOLTAGE (VeE) - v

92C9-42766

Fig. 10- Typical collector characteristics for 2N3414, 2N3415, GES3414andGES3415.

21


2N3414-17, GES3414-17

20 /V V- (TA) =25'C

::~ " ~ V /

c V / ~ 14 / ~ g 12~ ,L"/ V / '/. Ii V ",.. V / [II ..

1 II:

V V / II:

/ :> 8/ " II:

1---"" ....... V 0 6"'- I I-

" .. ,.,- V V ... ... -0 4

" £C\f~N J \ 2 ." )=10""'B=."" \ o BASE CURRENT (18) = 0.2 mA

o 2345678910

COLLECTOR-TO-EMITTER VOLTAGE (VCE) - v o 10 15 20 25 30 35 ~O

92CS-421SS

Fig. 11-Typical collector characteristics for 2N3416, 2N3417, GES3416 and GES3417.

COLLECTOR-TO-EMITTER VOLTAGE (VCE) - V 92C:$-42768

Fig. 12 - Typical collector characteristics for 2N3414, 2N3415, GES3414, andGES3416.

22

20/.~ ....... (TA) = 25'C

./ leV" V / 16 / ~ / '" ./ c

E 14V / J u -' c 12~ V I-

--- J z .. to,.,-II: '/' /, II:

V :>

" 8,....-t-" II: V J Ii 6 .. I ... ... 4 0

/ " 2 BASE CURRENT (IB) = 20 ""

IB= 10"" \ o 10 20 30 40 50 60 70 80

COLLECTOR-TO-EMITTER VOLTAGE (VCE) - v

92C$-42767

Fig. 13 - Typical collector characteristics for 2N3416, 2N3417, GES3416, andGES3417.


TO-92 Package Lead 1 - Emitter Lead 2 - Base Lead 3 - Collector


TO-98 Package Lead 1 - Emitter Lead 2 - Collector Lead 3 - Base


2N3858-60, 2N3858A, 2N3859A

I Silicon Transistors

TO-98

The GE/RCA 2N3858, 2N3859 and 2N3860 are planar epitaxial passivated NPN silicon transistors designed primarily for

AM radio I.F. and converter applications. These types are supplied in JEDEC TO-98 package.



2N3858 2N3859 2N3860

2N3858A 2N3859A

COLLECTOR TO EMITTER VOLTAGE (VCEO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 EMITTER TO BASE VOLTAGE (VEBol. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 COLLECTOR TO BASE VOLTAGE (VcBol ........................................................... 30 CONTINUOUS COLLECTOR CURRENT (lcJ(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 100 TOTAL POWER DISSIPATION (T A ::s;25°C)(PT)(Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 360 OPERATING TEMPERATURE (T J) ................................................................ . STORAGE TEMPERATURE (T SIg! ................................................................. . LEAD TEMPERATURE, 1116" ± 1/32" (1.5Bmm ± O.Bmm) from case for 1 Os max (T U ......................... .

NOTES: 1. Determined from power limitations due to saturation voltage at this current. 2. Derate 3.6 mW/oC increase in ambienttemperature above 25°C.

60 V 6 V

60 V 100 rnA 360 mW

-55to + 125 -55to +150

+260

°C °C °C

File Number 2060

23

Signal Transistors ______________________________ _

2N3858-60, 2N3858A, 2N3859A


CHARACTERISTICS


(VCB = 40V, TA = 100·C)

Emitter Cutoff Current (VEBO = 5V)

DC Forward Current Transfer Ratio 2N3858A(VCF = 1V, Ic = 10mA)

2N3859A(VCE = 1V, Ic = 10mA)

2N3858, 58A (VCE = 4.5V, IC = 2 rnA)

2N3859, 59A (VCE = 4.5V, Ic = 2 rnA)

2N3860 (VCE = 4.5V, Ic = 2 rnA)

Collector-Base Breakdown Voltage (Ic = 0.1mA)

Emitter-Base Breakdown Voltage (IE = 0.1mA)

Collector-Emitter Breakdown Voltage (lc = 1 rna)

Collector Saturation Voltage (Ic = 10mA, IB = 1 rnA)

Gain Bandwidth Product (V CE = 10V, Ic = 2mA) 2N3858, A

2N3859, A

2N3860

Collector-Base Time constant (VCE = 10V, Ic = 2mA)

Output Capacitance, Common Base (VCR = 10V, '.E. = 0, f = 1 Mc)

Input Capacitance, Common Base (VEB = 0.5V, IE = 0, f = 1 Mc)

Case Capacitance

280 ~OLLECTOR-TO-EMITTER tYeE) = 4.5 V

0: 240 w .. .. -z .. 2 0:

~ -i5.- 16O

~ ~~ --- 1~' ~ '\. ::1-Uo 120

vV' JU\1~C !~ c- .........\ ~o: 80 ~\lj_U 0: ~ ~ ,.",11\£ 1,. , -55' C u 401- 11 tt l-

I 0 f-

a 2 ••• 2 ••• 2 • •• 2 • • •

0.01 0.1 10 ,00

COLLECTOR CURRENT (Ie) - mA 92CS-42734

Fig. 1-Typical dc forward current transfer ratio characteristics for 2N3858 and 2N3858A.

24

SYMBOL LIMITS

UNITS MIN. TYp. MAX.

- - 50 nA leBO - - 10 "A lEBO - - 100 nA

60 - - -100 - - -

hFE 60 - 120 -100 - 200 -150 - 300 -

BVCBO 40 - -BVEBO 5 - -

V BVCEO 40 - -

VCEISAT - - 0.125

90 125 250

IT 90 140 250 MHz

90 170 250

rb'Cc - 65 150 ps

Ccb<L 2 2.7 4

Cibo - 10 - pF

- - 0.66 -

.ou ~oLLEeToR-To-Ei'TTER (VCE)' Y v .! J L J TA'" IODD e

0: 2 Il!

r- I ~ '"

.. ~ 200

~ f- VI--' I I ~~t6 -;.1."oC

~\ ~:E. r- £~-0:0 ___ ",.1\1" G~ 120

\ ~ £ ..... ~'/ ~: i eo r--f- .. ",II' TA'-55'e,_

P-ri l-I-" 1 0 .-g 40 f-rt I 0.01

2 4 •• 2 4 •• 2 4 6. 0·, 1 10

2

COLLECTOR CUARENT (IC) - mA 92CS-42n5

.....

4 6. 100

Fig. 2 - Typical dc forward-current transfer ratio characteristics for 2N3859 and 2N3859A.


350 COLLECTOR·TO-EMITTER (Vee) = 4.5 V

'" - It! V~ "\ ~ 3 .. I~ \ z -.. -\t-

'" 250 '" -1 I J ,.pC~ r---. .. - r\. z ~w200 ",:I :,... ::> .. /V ~,,~~ \ u~

OOi50 ,~·'\~~~/I 1 1 !;fi= -~=100 - .. ~" ~ '"1 ~,,~t-r- -... g 50

-+-1 II 0 z • 6. 2 4 68 2 4 6. 2 4 6 8

<>01 0·1 1 1 '0 o COLLECTOR CURRENT (IC) - mA

92CS-42736

Fig. 3 - Typical dc forward-current transfer ratio characteristics for 2N3860.

, I COLLECTDR-TO-BASE VOLTAGE (VCB)

7 r- - 80 V (2N3858A, 2N".9A)

'" 4 r- " 70 V (2N3858, 2N38.9, 2N3 .. 0) Z ..

f- / '" 2

'" I g :> u ~ V ::: 4

e .. Zr- / :>< Ie u..:..

/ "0 4~ .... ~~ 21-0

~ 0.1,

~ V 0. 4

'" U 2 f- / .. ::j o.°t 0 ~ U 4

Z 1-1 0·00.1 -55 -25 35 65 95

AMBIENT TEMPERATURE (TA) - 'C

92CS-42741

I 125

Fig. 5 - Typical collector-to-base cutoff current characteristic for aI/ types.

~ g !Z .. '" '" il '" ~ ::j o

10

u 2i----+"""==-+---,--f---=-t"''''--+----l ,&",5""

o a

BASE CURRENT (IB) " 0

20 40. 60 eo. CDLLECTOR-TD-EMITTER VOLTAGE (VCE) - V

92CS-42743

Fig. 7 - Typical cDl/ector characteristics for 2N3859.

100

2N3858-60, 2N3858A, 2N3859A

'" 2 COLLECTOR-TO-EMITTER VOLTAGE (VeE) - v ~ COLLECTOR CURRENT Ic)=10mA /' .. z

V/ .. '" ~ ifio V "', "' .. ~~ 1

L " .. t-",,"

;$ 8

~w r- / .... ue-6 "0 V "j: ....

~a: r- / .. :IE

'" 4 0. I z 1 I 1 1 I I

-65 -35 -5 25 55 85 1fS 145 COLLECTOR CURRENT (IC) - mA

Fig. 4 - Normalized dc forward current transfer ratio characteristic for aI/ types.

\ ,&0 0 " ___ --1O~"~ l.----:': -50 .. 8 --~ V- ...-/

~ ~ .--/". g ,...------.. -

'" ~ 3"_ --- /' z .. Sf----' --r-'" 30 f...-'" :> r-- -f.-----" u 2" ,/ '" 0. 4

!--- ~ '" 18'" 20 u .. ::j 0. " -- ~ U 2 10

~ 1~".nA 0 BASE CURRENT (IB) "

20 40 60 eo , o COLLECTOR-TO-EMITTER VOLTAGE (VeE) ~ V

92CS-42742

Fig. 6 - Typical col/ector characteristics for 2N3858.

11 lO~-__ L

~

'" z 5 .. '" '" :> 4 u

'" 3 0.

'" U ~ 2 ... 0. u

0 BASE CURRENT (18) " 0

0 20 40 60 80 'DP COLLECTOR-TOMEMITTER VOLTAGE (VCE) ~ y

92CS-42744

Fig. 8 - Typical col/ector characteristics for 2N3860.

25


2N3858-60, 2N3858A, 2N3859A

EMllTER·TO·BASE VOLTAGE (VEB)· V o 2 3 4

9 IU

.. 2 .. ';" 8r- ';"

'1 4 Ci

f- C'b - 2N3810

~ ~ 2N3S59 6

61- 2N3858 .. ..

:~ ~ a u u z z ..

5 10 G .. ~ 12 ~ ~ -- Cob

2N3158, 59, 80 U .. 14 !;

::> 2 .. I!: ! ::>

fr-O

0 0 5 fO '5 20 25 0

COLLECTOR·TO·BASE VOLTAGE (VCB) • V

92CS-42740

Fig. 9 - Typical output and input characteristics for 2N3858. 2N3859 and2N3860.

.. zo 1 " ~ '6-r-t 0 .. > - r-g a: .. 0 ~~'2 ,....-- ~.~ f-

8 =$ i!il ~ i~ - ":I 21--~ i : ~ ~ ~

'¥~ j!:.~

~- 8 r-- e It

a: it 0 r- 0

I; z J .. II .. 4r- ~ ::l \ / 0 r-- :c u ", \ 1\ \ ,/

0 2 •• 8 2 • • 8 2 • • 8

0·01 01 fO COLLECTOR CURRENT (IC) • mA

Fig. 11-Typical gain-bandwidth product characteristics for 2N3859 and 2N3859A.

0

9 .. 8 ..

Ci

~ rl z j!' U .. .. ~ .. ::> .. .. ::> 0

0 0

EMllTER· TO·BASE VOLTAGE (VEB) • V 2 3 4

I elba 2N3I59A Ib. __ ==*' ..... -, 2N3S58A : ~

8 rl ~

10 ~

12 ~

~r-_-.;cfO .. :::..-~2:::N:!3S:::SS::A:;:,~9::A-_l14 ~ ~

5 to 15 20 30

COLLECTOR·TO·BASE VOLTAGE (VCB)· V

92CS-421!57

Fig. 13 - Typical output and input capacitance characteristics for 2N3858A and 2N3859A.

26

.. 20

~ 16 0 > '--a:

~> f2 -i.:. -.~ g~ 8-a:

ti -.. 4-.... .... 0 -u

0

001

I .1

1iC. f-g f-8 f-I~ 1iIr-' f- j!:o I

e7r' r-~

z ~; r-!

~ •• 8

0.'

II i g = , ! ~ ~ ~

1\ 1 \

COLLECTOR CURRENT (lc) • mA

1

l I

1

/ './

4 6810

92CS-42729

Fig. 10-Typical gain·bandwidth characteristics for 2N3858 and 2N3858A.

.. ,8 I ~ ,--- ~ 0 ::> > 14- 0 a: 0 I .. I~ ~ ~> ,....--

I I ~.;; 10 r-- ~.; iii : i a~ ~ ! ! ~ , J ~g "" r- 0'-

I! ti 6r- 1£

1\ I' -;r-~ I-- -i .... " 0 2 u 1

0.01 •• 8

0·,

\ " •• 8 , \

COLLECTOR CURRENT (IC) • mA

r // Itt

•• 8 10

92CS-42736

Fig. 12 - Typical gain·bandwidth product characteristics for 2N3860.

---0:35 ICIlB = 20 .. AMBIENT TEMPERATURE (TAl = 25°C

" 0.30 ~=:- I-0->~O.25 .". r-~~.20 ~~ f-~j: c.tS

f--2ijiaSSA d:~ t If 0::> S!C O.IO ....

I- V .... ~ 0.05 u

t-2N3i tA 0

2 0·1 • • 8 2 • •• '0


2~3S5J-2N3SitA IJ.

V

~

2 • 92CS-42?28

Fig. 14 - Typical collectDr·to-emitt&r saturation voltaga characteristics 2N3858A and 2N3859A.

100


2N3858-60, 2N3858A, 2N3859A

> v .• , leIla =20 I AMBIENT TEMPERATURE (TA) '" 25°C

~O.BO - I /.~

; Q15 leila = 20

~ /" ~ 1\ o 070 >

~f-' a: ~ ..

~ 065 :r

;- ~OLLEC o .TO!~," 'I' ~ EAYOLTAGE ; ~o

;;:::::::: ~ 'IC1'( I ~ 0,55

2 4 6 • 2 4 6 • 2 4 6 • 0.1 I 10 100

COLLECTOR CURRENT (Ie) ~ mA 92C'-42727

Fig. 15 - Typical base·to-emltter voltage characteristics for 2N3858A and 2N3859A.


Lead 1 - Emitter Lead 2 - Collector Lead 3 - Base

27


2N3903,2N3904,2N3905,2N3906


TO-92

The GE/RCA 2N3903, 2N3904 NPN types and 2N3905, tions. PNP values are negative; observe proper polarity. 2N3906 PNP types are planar epitaxial silicon transistors de- These types are supplied in JEDEC TO-92 package. signed for general purpose switching and amplifier applica-


2N3903 2N3905 2N3904 2N3906

COLLECTOR TO EMITTER VOLTAGE (VcEol ........................................................ . 40 -40 V COLLECTOR TO BASE VOLTAGE (V cBol ........................................................... . 60 -60 V EMITTER 10 BASE VOLTAGE (VEBol .............................................................. . 6 -5 V CONTINUOUS COLLEC1OR CURRENT (Iel ........................................................ . 200 mA TOTAL POWER DISSIPATION T A:S 25°C (PT) ....................................................... . 350 mW DERATE FACTOR, T A > 25°C .................................................................... . 2.8 mW/oC OPERATING TEMPERATURE {TJ} ................................................................. . -5510 +135 °C STORAGE TEMPERATURE {T STG} ................................................................ . -5510 + 125 °C LEAD TEMPERATURE, 1/16" ± 1/32" from case for lOs max (T u .......................................... . +230 °C

File Number 2056 28 _________________________________________________________________ _

--------------------_________ Signal Transistors

2N3903, 2N3904, 2N3905, 2N3906


CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Ic = lmA.IB = 0)

Collector-Base Breakdown Voltage (Ie: = 10,..A, IF = 0)

Emitter-Base Breakdown Voltage (IE = 1 O,..A, Ic = 0)

Collector Cutoff Curernt (VCE = 30V, VBEIOFFl = 3V)

Base Cutoff Current (Ve:E = 3OV, VBE, OFF\ V. 3V)

Collector-Emitter Saturation Voltage (Ic = 10mA.IB = lmA)'

(Ie: = SOmA, IR = SmA)'

Base Emitter Saturation Voltage (Ic = lOrnA, IB = 1 rnA)"

(Ic = SOmA, IB = SmA)'

--

DC Forward Current Transfer Ratio (VCE = IV, Ic = 100,..A)

(VCE = IV, Ic = 1 rnA)

(VCE = IV, Ic = 10 rnA)'

(VCE = lV,lc = 50 rnA)"

(VCE = lV,lc = 100 rnA)'

Collector-Base Capacitance (VCB = 5V, IE = 0, f = IMHz)

Emitter-Base CapaCitance (VFR = 5V, IF = 0, f = lMHz)

Gain Bandwidth Product (VCE = 20V, IE = lOrnA, f = 100MHz)

'Pulse conditions: oS 300 "s pulse width, oS 2% duty cycle.

,u~ AMBIENT TEMPERATURE (TA)

COLLECTOR CURRENT (Ie) • mA

92C$-42781

SYMBOL

VlBRlECO

V'RR\e:RO

V'BRlEBO

ICEV

IBEV

VCE(SAT)

VBE(SAT)

--

hFE

Ccb

CAh

IT

Fig. 1-Typical de forward current transfer ratio characteristics for 2N3903.

LIMITS

2N3903 2N3905 UNITS 2N3904 2N3906

MIN. MAX. MIN. MAX

40 - -40 -V

60 - -40 -6 - -5 -- 50 - -50

nA - 50 - -50

- 0.2 - -0.25

- 0.3 - -0.4

V 0.65 0.B5 0.65 -0.B5

- 0.95 - -0.95

2N3903 2N3904 2N3905 2N3906 -MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. -

20 - 40 - 30 - 60 - -35 - 70 - 40 - BO - -50 150 100 300 50 150 100 300 -30 - 60 - 30 - 60 - -15 - 30 - IS - 30 - -

- 4 - 4 - 4.5 - 4.5 pF

- B - 8 - B - 10

250 - 300 - 200 - 250 - MHz

1000 AMBIENT TEMPERATURE (T A) 6 COLLECTOR-TO·EMITTEA VOLTAGE (VeE}

a: 4t-TA'" 125°C, VeE ='1 v w :Ii r--TA ~ 2S'C, VCE ~ SV r---.. z 2 1', C

r:=_j-TA ~2S'C, VCE ~ 1 V ~.oq; !iii 6 F-TA~-SS·C.VCE~1V -

~~ 4

a~ 2 DC a:a: C' ~ . a: • lZ 4 U D 2

• 0.'

2 4 6 • 2 4 6 • 2 4 6 • .0 10 o COLLECTOR CURRENT (Ie) - rnA

92CS-42770

Fig. 2 - Typical de forward current transfer ratio characteristics for 2N3904.

29


2N3903,2N3904,2N3905,2N3906

.. . Ic/1a=10 ,,> C'

~i1 BASE-TO-EMITTErrOLTjGE (VrE)

>l:: II _~.c -~~ -;:: 0..8 .~ RATURE (flo)' p·C

= r-AMBIEIIT TEMPE v T A' p·C

~ 0,6 VBE@S , i.-'" .. ~P:E.I-0: .. l-I: 0..4

:I 'I' ~ 0.2 .. .. c .. 0.

2 4 • 8 2 • • 2 • • • 0..1 10. '00 COLLECTOR CURRENT (IC) - mA

"""'2783

Fig. 3 - Typical base-to-emitter saturation voltage characteristics for 2N3903 and 2N3904.

t.IClIB-10

z 8 0. • ;:: => ~t 2 ....

t:-- AMBIENT T~MPERAT~Rf (t A) • 25· C o:u ./ .. ~o I:~ • 1H·C

iii:! • ~

0: ... -SS·C Co. • t> .. :::l 2 0. u

0.01 2 4 •• 2 • •• 2 • • 8

0..1 1 10. 100 COLLECTOR CURRENT (IC) - mA

92CS-4UU

Fig. 5 - Typical collector-to-emitter saturation vo.ltage characteristics fcr2N3903.

1000 AMBIENT TEMPERATURE (TA)

• •• -0.1 -, 4 6 8 2 -,0.

• • 8 -ICC

Co.LLECTOR CURRENT (IC) - rnA ',CI-427TII

Fig. 7- Typical de forward-current transfer ratio characteristics for 2N3905.

30

1.4 (TA)' H·C

~ I~ I

-1 ~>f.2 r--1 ;::.!.. I-

~ iii ~ c- " !i~1 r- :......g !c~ I- ~ :;0.8 I--c- ..

0: "c C- o: ~!:i " I~06 I--c- U

0: 0. 0: t ~ 0..4-r-- j ..

\ :::l 0.

8 0.2 - I-- 1 I ........ I"-- r-I"- "'- ~ t--. •• 8 2 • 8 2

0..001 0.01 C., 10 BASE CURRENT (IB) - mA

92CS-421f2

Fig. 4 - Typical co.lfector-to-emitter saturation vollage characteristics for 2N3903 and 2N3904.

fa ICIIB -1.

z • 0.> ;::. 4

=f ~~ .. > 2 0: .. .. " I:~ 0.1 :I'" • .. 0. 0:> • 0.

t 4 OJ :::l 0. 2 U

0.0.1

0..1

AMBIENT TEMPERATURE jAl' 25·C

2 4

125·C

-ss·

•• 2 • • 8 10

COLLECTOR CURRENT (IC) - rnA

~ ~~ ..-:::;.

2 4 • 8 IDa

92CS-42114

Fig. 6 - Typical collector-to-emitter saturatio.n voltage characteristics fo.r2N3904.

"""'. COLLECTOR-TO-EMITTER Vo.LT"'GE (VCE) • AMBIENT TEMPER ... TURE (TAl 4 -T~ == 12SJC. veE! -1 V

2;dA' --i T ... ·2S· C,VGE·-1V

:I 1OO.=;-A·_55·~.VCE·-1V ~i :,~----.~--~_+~~--~~--~~--~--4__P~ ~e. 12 2~--~--~~~--~--~~4_~~--~--~~

!i,o~==~==~~~==~===$~=$$===$===$=$=~ u :1

I :r--4r-~--~~--~--~~~--~---+~-+1 I

-0.1 • • 8

-f 4 6 8 2

-10

COLLECTOR CURRENT (Ic) - mA

• 8 -'00

Fig. 8 - Typical de forward-current transfer ratio. characteristics for 2N3906.

____________________________ Signal Transistors

2N4123, 2N4124, 2N4125, 2N4126

-1.2 IC/IB~ 10 .. f-" ~

-1

f- _ •• ob --~ > k::1=== Z -0.8 _uoC

~ .-::- AMBIENT TEMPERATURE (T AI- ,.....f..-C ---a:>-Q.6 V8£@5'1.1'A",25° C

~~ f- f--~ .. : -I-f5 =-0.4 ~~ f-:IE .. -0.2 .. =

f-0

z>

~~25°C ~

~ J 1\ 2, -1·2 -f- E "--f- -E f-..... , ..

cl - , I(! ~rJ -, - f- I-g -; f-~i:!. - !i .... Ili"·o.s - f- ..

0:. ~;! - !!i !~~ f- '-- U

0:. .. I- 0 0 t ... -o~ - -u .. .. - ::I \ I ::I 0 1\ 0 -0.2 U u

II ........ It - ........ -0 -2 • • • 2 • • • 2 • • • 2 •• 8 2 •• 8 2 • • 8 2 ••• -0.1 -I -10 -100


92CS-42771

Fig. 9-Typicalbase-tJJ-emittersaturation voltage characteristics for 2N3905 and 2N3906.

- • lellB -10

Z • 0 ;:: C> ... • :::I .. !oil 2

-0.001 -0·01 -0·1 -1 -10 BASE CURRENT (Ia) - mA

92C5-42778

Fig. 10- Typical collector-to-emitter saturation voltage characteristics for 2N3905 and 2N3906.

'8 lel1B~10

• Z 0 • ~> 0:.' " .. 2 .... ~ o:.~ -~ E--0.1

... : c .. ~ "u A 0:.>

CS<10pF lUoC

ii 8 -• I-'" 0:. ... _wc 0-' • ... 0

AM~IENT TEMPERATUR~~T Al ~12'OC u> j 0 2 U I I I 0.01

2 • .8) 2 • • • 2 -0.1 -10

COLLECTOR CURRENT (lcl- mA 92(1-42119

Fig. 11 - Typical collector-to-emltter saturation voltage characteristics for 2N3905.

• •• -100

F-o.l _" . ,uoC-~ ~

!~ 6 :;....-

0:.0 • _",oC

0> ... AMBIENT TEMPERATURE [I ~ 1.0/: u ..

::I 2

" I I U -0.01

2 • • 8 2 • • • 2 • -0.1 -1 -10

COLLECTOR CURRENT (IC) - mA 92CI-42180

Fig. 12-Typical col/ector-to-emitter saturation voltage characteristics for 2N3906.


Lead 1 - Emitter Lead 2 - Base Lead 3 - Collector

• 8 -10

_____________________________________________________ 31

Signal Transistors _______ ----------------------

2N4123, 2N4124, 2N4125, 2N4126

Silicon Transistors

I TO-92

The GE/RCA 2N4123, 2N4124 NPN types and 2N4125, 2N4126 PNP types are planar epitaxial passivated silicon transistors designed for general purpose amplifier

applications. PNP values are negative; observe proper polarity.



2N4123 2N4124 2N4125 2N4126 COLLECTOR TO EMITTER VOLTAGE (VCEO)............................ 30 25 -30 -25 V COLLECTOR 10 BASE VOLTAGE (V ceol. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 30 -30 -25 V EMITTER TO BASE VOLTAGE (VEeol. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 -4 -4 V CONTINUOUS COLLECTOR CURRENT (Icl ........................... . 200 rnA TOTAL POWER DISSIPATION (T A:S 25°C) ............................. . 350 mW TOTAL POWER DISSIPATION (T c:S 25°C)(PT) ......................... . 1 W DERATE FAC10R T A > 25°C ....................................... . 2.8 mW'oC DERATE FACTOR T C > 25°C ....................................... . 8 mW'oC OPERATING TEMPERATURE (T J) .................................... . -5510 + 150 °C STORAGE TEMPERATURE (T 8TG) ................................... . -5510 + 150 °C LEAD TEMPERATURE, 1116" ± 1/32" (1.58mm ± 0.8mm) from case for lOs max. (T U . ....... . +260 °C

File Number 2057

32

--------------_______________ Signal Transistors

2N4123, 2N4124, 2N4125, 2N4126

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (T A) = 2SoC Unless Otherwise Specified


Coliector·Emitter Breakdown Voltage V(SR)CEO (Ic = I mA, Is = 0)

(Ie = 1 mA, VSE = 0)

Collector-Base Breakdown Voltage (Ie = 10"A,IE = 0) V SRCSO

Emitter·Base Breakdown Voltage (IE = 10"A,lc = 0) VtSRIESO

Collector Cutoff Current (VCR = 20V,IE = 0) Icso

Emitter·Base Reverse Current (VES = 3V, Ic = 0) IESO

DC Forward Current Transfer Ratio (VCE = 1V,Ic = 2mA) hFE (VeE = IV,lc = SOmA)'

Small-Signal Forward Current Transfer Ratio (VCE = 20V,Ic = 10mA, f = 100 MHz)

hfe (VCE = IV,IC = 2mA,f = I kHz)

Collector-Emitter Saturation Voltage (Ic = SOmA, Is = SmA)' VCEtSATI

Base Emitter Saturation Voltage (lc = SOmA, Is = SmA)' VSEtSATI

Collector-Base Capacitance (Ves = 5V, IF = 0, f = 100 kHz) COb

Emitter-Base Capacitance (VES = 0.5V,lc = 0, f = 100 kHz) Cib

Gain Bandwidth Product (VCE = 20V,IE = 10mA, f = 100 MHz) fT

Noise Figure (Broad Band) NF (Ic = 100mA, VCE = 5V, Rs = IkQ Bandwidth = 10 Hztol5.7 kHz)

, Pulse Conditions: S 300l'S Pulse width, S 2% Duty Cycle.

'u~ AMBIENT TEMPERATURE (T A) a: w 6 COLLECTOR-lO-EMITTER VOLTAGE (VeE) ..

: -J .. ~ 12l)v~EI~ 1 v

.. z .. a: I-

~ toea ~TA~25OC,VCE~5V :--. ~w 6 TA .25°C, VCE ~ 1 v !!i:s 4 --:+- -IV "0 _ TA ~ _55°C, VcE-

~~ 2 ~a:l a: 8 0 • .. " • 0

2

I

0.1 2 • • 8 2 4 • • 2 4

'0 COLLECTOR CURRENT (Ie) - rnA

92C5-42781

• • 10 o

Fig. 1-Typical dc forward current transfer ratio characteristics for 2N4123.

LIMITS

2N4123 2N4124 2N412S 2N4126 UNITS

MIN.

30

-

40

5

-

-

50

25

2.5

50

-

-

-

-

250

-

MAX. MIN. MAX MIN. MAX. MIN. MAX

- - - -30 - - -- 25 - - - -25 -

- 30 - -30 - -25 -

- 5 - -4 - -4 -

50 - 50 - -50 - -50

50 - 50 - -50 - -50

ISO 120 360 -50 -150 -120 -360

- 60 - -25 - -60 -

- 3 - 2 - 2.5 -

200 120 480 50 200 120 480

0.3 - 0.3 - -0.4 - -0.4

0.95 - 0.95 - -0.95 - -0.95

4 - 4 - 4.5 - 4.5

8 - 8 - 10 - 10

- 300 - 200 - 250 -

6 - 5 - 5 - 4

1000 AMBIENT TEMPERATURE (TA)

a: 6 COLL,ECTO~-TC?-E,M!TTER VOLTAGE (VeE)

~ 4r------1A'" 125e e, VeE" 1 V .. r--.. 2;-------TA '" 25°C. VeE'" 5 V z

...... "'! I;l rlTA.250C,VC~ ~ 1 V

':" '?~ !lEw 6 w"

'-TA. -we, VCE·' V

a:€. 4

a~ 2 0" a:a: .. 1

8 ~ a: • Ii! 4

" 0 2

1

0.1 2 4

I l

• 8 2 4 • 8 2 • 10 COLLECTOR CURRENT (Ie) - mA

92C8-4277O

• •

V

nA

-

-

V

pF

MHz

dB

10 o

Fig. 2 - Typical dc forward current transfer ratio characteristics for 2N4124.

33


2N4123, 2N4124, 2N4125, 2N4126

.. . lelIB'10

.,> c· ~il

BASE-TO-EMITTEj rOLTjGE (VTEI

0 .. II 1,c _f->ID ~~ ~ i= 0.8

ERATURE ITAl' 2!I'C ~ f--olMBIEIIT TEMP v T A' IS' C

= 0.6 VBE@S • V ..

0: .. ~ 0.4

~ t:' 0.2 .. .. ::I 0 2

0.1

125'C I-I-

• • 8 2 • 8 10

COLLECTOR CURRENT IICI - mol

2 4 • 8 100

9ilCS-42783

Fig. 3 - Typical base-to-emltter saturation voltage charactaristics for 2N4123 and 2N4124.

• lellB - 10

z • 0 • ;: ~> ",.

=! 2 r- AMBIENT T~MPERAT~Rr (ITA)' IS'C o:u L.-' ">0

!:~ • 125°C

iI= • ~ 0: .. -SS'C 00 • Ij> .. .. .. t 0 u

0.01 2 • • 8 2 4 • 8 2 4 • 8 0.1 1 10 100

COLLECTOR CURRENT (IC) - mol 'ICS-42n3

Fig. 5-Typical collector-to-emitter saturation vol/age charactariS1ics for2N4123.

1000 AMBIENTTEMPERATURE(TA)

• •• 4 •• -0.1 -, -10

COLLECTOR CURRENT (IC) - mol

4 •• -IOC

Sics-una

Fig. 7- Typical de forward-current transfar ratio charactarlstics for 2N4125.

34

1·4 (TA) - H'C ~ I~ I

~~1.:i! r--! E -1 ~ 51 l ~.,. " o:t, r- -g

~~ t- Ii :;08 t-- I"-l;! E~ !!i i006 - I"-~ .. > 0 0: Ij ° 0.4-r-Ij .. .. .. ..

\ j ° 0 0.21"- l"- I ........ r:::: u

t- l- I- l- I-• • ••• 2 • •• • 0.001 0.01 0·1 10

BASE CURRENT (IB) - mol

91CS-4un

Fig. 4 - Typical collector-to-emitter saturation voltage charactaristics for 2N4124 and 2N4123.

'.ICIIB Z 2> • ... ~i

4

"'-!c~ 2 .. ~ 0: .. .. " !:~ O. II" • .. 0 0:'> • ° Ij • j 0 2 u

0.01

0.'

10

AMBIENT TEMPERATURE r Al' H'C

2 4

1Hoc

-550

•• 2 4 • • '0 COLLECTOR CURRENT (lc) - mol

~ t:2~ ...-::;

2 • •• '00.

'2CS-42174

Fig. 6 - Typical collector-to-emitter saturation voltage charactaristics for2N4124.

!WO. COLLECTOR-TO-EMITTER VOLTAGE (VCE) • AMBIENT TEMPERATURE (T A) 4t-T~ = 125ol e. VeE ~ -1 V

0: 2F=!A~ '.:l'. ; TA'2!I'C.VqE,-IV

li tOo,; ~TA' _&S'C. VCE' -IV a::_ 6-'

~i 4r---r-~r-r1-r---r--~-r~r-~--~r-~d l;!2 2r---r---r-r1-r---r--~-r~r-~--~~rti

§=10~==$===$=~~===$===$=$=f$===$===$=$=~ u :1 i :~--~--~~Hr--Hr--~-r~r-r---r---rt;

I

-0.1 • • • -1

COLLECTOR CURRENT (IC) - mol

•• -ICC

Fig. 8 - Typical de forward-current transfar ratio. charactaristics for 2N4126.


2N4123, 2N4124, 2N4125, 2N4126

-1.2 letla ·10 .. -" -1 ~ _ •• 0J: I---r-!.!

-b:::~

z -0.8_ EMPERATURE IT ,,). ,.' C..."", ....... f.--i-" 0. ;: - AMSIENTT .....-c

sV T,,·"oC §>-o.6 1-'

..... VaE @ , -:;;;tc C C - ~ , .. 'C .. I f-lei :-0.4 -I:~ ~ i .. -0.2 .. ~ c-Ol a

-. ~A·25'C ~ ~ J \\ ~=:--I.2 1-1- ~ I-~ E r-E I-~i

0

5i I- " , 0:-

I-I-f-g .. ~~ -I I-.... r- !Z ffi~-o.E -r- ~

\ I:~ 0: 1\ i!l!.!-O.E

- il -I- a:

\ 0: - 0. a l-I- -Oil " "

- - .. \ .. - :!

I :! a \. ....... 0. -0.2 " " II r---.. ........ ...... H-or- - t-2 • •• 2 4 •• 2 4 •• 2 • •• 2 4 •• • 4 .a 2 4 •• 2

-0,1 -I -fa -100


92CS-42777

Fig. 9- Typical base-to-emitter saturation voltage characteristics for 2N4125 and 2N4126.

-t. letla. 10

z • 0. ;: c> 0:,

• ::>c

-0.001 -0.·01 -0.·1 -1 BASE CURRENT (Ia) • rnA

92CS-42778

Fig. 10- Typical collector-to-emitter saturation voltage characteristics for 2N4125 and 2N4126.

'. letlS· 10

• Z 0. 4 ~> 0:' ::>C

2

-10.

~I 2

~ .... _-a 0:" .. ~ I: -0.1 CS<10pF

S~ ~ ~'" 0:>

E;-O.l 125"C -... !a 6 r-o:~ J ~5S"C

~~ . AMS\ENT TEMPERATUR~I(TA) .1'5°C j

0. 2

II " 0.01

_0 • , .. ~ ;:-!~ 6 0:0.

4 _55° C

0.>

AMSIENT TEMPERATURE U A) • ~50 6 I-

" j 2

II 0.

" -0.0.1 2 • •• 2 • • • 2 4 •• • 4 •• 2 4 • • 2 4

-0.1 -1 -10. -100 -0..1 -1 -10.

cOLLECTaR CURRENT (IC) - mA caLLECTaR CURRENT (IC) - mA 92C5-42180

'2CS-42779

Fig. 11- Typical collector-to-emitter seturation voltage characteristics for 2N4125.

Fig. 12 - Typical collector-to-emitter saturation valtage characteristics for 2N4126.


Lead 1 - Emitter Lead 2 - Base Lead 3 - Callector

•• -1 0.

_________________________________________________________________ 35


2N4400,2N4401,2N4402,2N4403


TO-92

The GE/RCA 2N4400, 2N4401 NPN types and 2N4402, 2N4403 PNP types are planar epitaxial passivated silicon transistors designed for general purpose switching and

amplifier applications. PNP values are negative; observe proper polarity. These types are supplied in JEDEC TO-92 package.


2N4400 2N4401

COLLECTORTOEMITIERVOLTAGE(VCEel .................................................. 40 COLLECTOR TO BASE VOLTAGE (V CBel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 EMITTER TO BASE VOLTAGE (VEBel ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 CONTINUOUS COLLECTOR CURRENT (Ie). . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 600 TOTAL POWER DISSIPATION (TA :S 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 350 TOTAL POWER DISSIPATION (T c :S 25°C) (PT) 1 DERATE FACTOR T A > 25°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 2.8 DERATE FAClOR T C > 25°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

2N4402 2N4403

-40 -40 -5

-600 350

1 2.8 8

OPERATING TEMPERATURE (TJ) ........................................................... -5510 +150 STORAGE TEMPERATURE (T STG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55 10 + 150 LEAD TEMPERATURE, 1/16" t 1132" (1.58mm t 0.8mm) from case for lOS max. (T tJ. . . . . . . . . . . . . . . . . . . . + 230

V V V

mA mW W

mW/oC mW/oC

°C °C °C

File Number 2058

36


2N4400, 2N4401, 2N4402, 2N4403


LIMITS

CHARACTERISTICS SYMBOL 2N4400 2N4401 2N4402 2N4403 UNITS

MIN. MAX. MIN. MAX MIN. MAX. MIN. MAX

Collector-Emitter Breakdown Voltage V(BR)CEO (Ic = 1 mA, IB = 0) 40 - 40 - -40 - -40 -

Collector-Base Breakdown Voltage (Ic = 100"A, IE = 0) V1BR\CeO 60 - 60 - -40 - -40 - V

Emitter-Base Breakdown Voltage (IE = 100"A, Ic = 0) ViBR EBO 6 - 6 - -S - -S -

Collector Cutoff Current (\lea = 3SV, VFRIOFF\ = O.4V) ICEV - 100 - 100 - -100 - -100

Base Cutoff Current nA

(VCE = 35V, VEBIOFF\ = 0.4V) IBEV - 100 - 100 - 100 - 100

DC Forward Current Transler Ratio (VCE= 1V,lc=0.1mA) - - 20 - - - 30 - -(VCE = 1V, Ic = 1mA) 20 - 40 - 30 - 60 - -

(VCE = 1V, Ic = 10mA) hFE 40 - 80 - SO - 100 - - D (VCE = 2V, Ic = 1S0mA)" SO 1S0 100 300 50 1S0 100 300 -(VCE = 2V, Ic = SOOmA)" 20 - 30 - 20 - 20 - -

Small-Signal Forward Current Transler Ratio (VCE = 10V, Ic = 1 rnA, f = 1 kHz) hie 20 2S0 40 500 30 250 60 500 -

Collector-Emitter Saturation Voltage (Ie = 150mA,IB = 1SmA)" VCE(SAT) - 0.4 - 0.4 - -0.4 - -0.4

(Ic = 500mA, Ie = SOmA)" - 0.75 - 0.75

Base Emitter Saturation Voltage

- -0.75 - -0.75 V

(lc = 1S0mA, IB = 15mA)" VBE(SAT) 0.75 0.95 0.75 0.95 - -0.4 - -0.4

(Ic = SOOmA, IB = SOmA)" - 1.2 - 1.2 - -0.75 - -0.75

Collector-Base Capacitance (VCB = 5V, IE = 0, I = 1 MHz) Ccb - 6.S - 6.5 - - - -(VCB = 10V, IE = 0, 1= 1 MHz) - - - - - 8.5 - 8.5 pF

Emitter-Base Capacitance (VFR = 0.5\1, Ir. = 0, I = 1 MHz) CAb - 30 - 30 - 30 - 30

Gain Bandwidth Product (VCE = 10V, IE = 20mA, 1= 100 MHz) IT - 200 - 2S0 150 - 200 - MHz

I nput Impedance (VCE = 1 rnA, VCE = 10V, 1= 1 kHz) hie 0.5 0.75 1 15 750 7.5 1.S 15 kQ

Voltage Feedback Ratio (~= 1 rnA, lice = 10V, 1= 1 kHz) hI<l 0.1 8 0.1 8 0.1 8 0.1 8 x 10-4

Output Admittance (VCE = 1 rnA, VCE = 10V, 1= 1 kHz) hoe 1 30 1 30 1 100 1 100 "mhos

Delay Time td - 15 - 15 - 15 - 15

Rise Time (Ic = 150 rnA, IB1 = 15mA (Vr.E = 30, VERIOFF = 2V) tr - 20 - 20 - 20 - 20

ns Storage Time ts - 225 - 225 - 225 - 225

FaliTime(IB1 = IB2 = 15mA) (VJ:E = 30 V, _~ = 1S0 rnA) ~ - 30 - 30 - 30 - 30

"Pulse Conditions: Pulse width,;; 300"sec, Duty Cycle,;; 2%.

37


2N4400,2N4401,2N4402,2N4403

.. -I- I(vb~) ~ 1 V I .- -z 2f--f--(VCE)~1-" ..

0: 1', 0:

" ~i ........ 'joe -- ~ " ~e ..... ...... f-' .0 1..... .-4 ~oe ~5 l·

uo: • ........ ~11"~('I'l~ ..... .... r--\ ~~ • -{E.'Io.~"

I' .. z ~~~ .... /~ ~~ • :IE ,..'" V .... 0: 0

2 ...... Z

2 ••• 2 ••• 2 ••• 2 • 0.1 1 10 100

COLLECTOR CURRENT (Ie) - mA 921:8-42788

Fig. 1-Normalized de forward current transfer ratio characteristics for 2N4400 and 2N4401.

1 (TAl· 2So C z ~ cl-~ .. E

0: 0.8 " c !I-" -g .. E :I> ~- ~ \ 0:'

.. ~!0.6 '--15

\ 0:

i~ 0:

" ay~ u I\. ~ ~O.4 0: e

~!:i u .. 1;0 .. r-.... .. ~ >.).2 0 .. "- f r--.... 0 u

[ 0

•• 2 ••• 2 • •• 2 • •• 2 4

-0.01 -0.1 -1 -10

BASE CURRENT (IB) - mA 92C5-42781

Fig. 3-Typica/collector·to-emitter saturation voltsge characteristics 2N4400 and 2N4401.

1 BASE-TO-EMITTER SATURATION VOLTAGE (VBE"')

V BASE-TO-EMITTER 'ON" VOLTAGE (VBEon)

~ CO~~~!.?~I-~OiEMlrERISAIT~~ATION VOL TAGE~ .. 0.8 " Aii~'ENT TEMPERA!,RE lTAI- 25~i-": I--~ '-11 11 1'0 :;;.-0 ... @'d'. > i 0." ~EF.'::': ~Cf.·\O~ .. ~.f.on@ u r-> ,;

0.4 0 .. II

I-> J / I 0.2 .. ..

J.=::...VCI!III'@ leila' 1. V >

0 2 • •• 2 • •• 2 . ". 2 • 0·1 1 10 100

COLLECTOR CURRENT (lc) - mA 92CS-42789

Fig. 5-TypicaIV.E'"', Vat"'. and Vcf"'voltagecharacteristics for all types. (PNP voltage and current values are negative)

38

.. -rlvcE)' 1 v -JJ.k-t-z .. 2~ FIVCE)'I.V -0:

0: J .....-~I~~~;- ... ~, " u I-"r---""'-~~ -a "iii .... ~

1"- .... 0: .. f...1 ~..; ~ T 1 ;E., ~ 0: 0 ~~.\~ L LJ.- - -2~ uO: ......... .",,,-- _po

IY ao: • &II ....... ... ..... "- ~ ~~ f..--' • :IE" \ 0: 0 Z

2 • •• 2 • .8

2 • • • • -0.1 -10 -100 COLLECTOR CURRENT (IC) - mA

92CS-427815

Fig. 2 - Normalized dc forward current transfer ratio characteristics for 2N4402 and 2N4403.

1 J (TA) 25°C z

~-0 E c !r-~ 0.8 ~- :i! E 0: " ~ r--" 51 .. > g c, "'- !i 15 iO.6 I:rl

.. \ 0:

i~ 0:

'1' .. G ~ 0,,0.4 0:

~~ 0 I;

00 .. \ \. .. > ..

~ 0.2 .. ~

0 \ r'--.. u .. 0

1- ....... [-u 0

2 • .8

2 • •• 2 • " 8 2 • O.QI 0.1 I 10

BASE CURRENT (lB) - mA 92CS-421S'"

Fig. 4 - Typical collector-ro-emitter saturation voltage characteristics 2N4402 and 2N4403.

,U. u I-~ 0 ~ .. I-z !!! -Q5 u ii: I-.. 0 -1 u .. -0:

~ -1.5 0: -.. .. :IE -2 ~ ~

o.

0.1

I 6yc FOR VCE'"

./' ./

-I-N.fo"~1-

1111 • • 8

2 • .8

2 • •• 2 10

COLLECTOR CURRENT (IC) - mA

100

92CS-427B8

•

Fig. 6 - Typical temperature coefficient characteristics for all types. (PNP voltage and current values are negative)


2N4400,2N4401,2N4402,2N4403

9zeS-42792

+30 •

I

TCS <10PF _J

SCOPE RISE TIME < 4 ns.

92CS-4nu

Cs '" TOTAL SHUNT CAPACITANCE OF TEST JIGS, CONNECTORS AND OSCILLOSCOPE.

+30.

Fig. 7-"Turn-on" switching time waveform and test circuit for 2N4400 and2N4401.

Fig. 8 - "Turn-off" switching time waveform and test circuit for 2N4400 and2N4401.

·30.

15<2 •• +2.

o -

-16.

1 kO I I I

.": ]/= ~: :~ .. lkO o >--.J\!V\r1O-+-i.

-16V

--l 1-- ~~~y1~rcLE = 2'10

.L T CS <10PF

.J I \--1 TO 100,.. ~ DUTY CYCLE = 2'10

92CS-42790

SCOPE RISE TIME < 4 ns. Cs '" TOTAL SHUNT CAPACITANCE OF TEST JIG CONNECTORS

AND OSCILLOSCOPE.

+4.

-30.

I I I

1_ l"'cs<10PF

...J

921:'-4279'

Fig. 9 - "Turn-on" switching time waveform and test circuit for 2N4402 and2N4403.

Fig. 10-u1lJrn-off" switching time waveform and test circuit for 2N4402 and 2N4403.


Lead 1 - Emiller Lead 2 - Base Lead 3 - Collector

39

Signal Transistors ____________________ ....... _________ _

2N4424

Silicon Transistors

I Features: • Low Saturation Voltage • High Beta • 900mW@Tc = 25°C

TO-98

The GE/RCA 2N4424 type is a planar, passivated, epitaxial NPN silicon transistor intended for general purpose industrial circuits. This transistor is especially suited for high level


linear amplifiers or medium speed switching circuits in industrial control applications. This type is supplied in JEDEC TO-98 package.


COLLECTOR 10 EMITTER VOLTAGE (V CEo! ........................................................................... 40 V EMITTER 10 BASE VOLTAGE (VEBo! ................................................................................... 5 V COLLEClOR 10 BASE VOLTAGE (Vceol .............................................................................. 60 V CONTINUOUS COLLEClOR CURRENT (lc)(Note 1) .................................................................. 500 mA lOTAL POWER DISSIPATION (T A :s: 250 C)(PT)(Note 2). . . . . . . . . . . . . . . . . . . . . . . . . ................................. 360 mW lOTAL POWER DISSIPATION (T A:S: 65°C) (PT) (Note 2) ................................................................ 250 mW OPERATINGTEMPERATURE(TJ) ......................................................................... -55°to +1500 C SlORAGETEMPERATURE(TSTG) ......................................................................... -55°to +150°C LEAD TEMPERATURE, 1/16" ± 1132" (1.58mm ± 0.8mm) from case for 10 sec. max. (T U ...................................... + 260°C

NOTES: 1. Determined from power limitations due to saturation voltage at this current. 2. Derate 2.88mW/oC increase in ambient temperature above 25°C

File Number 2059 40 ______________________________________________________________ ___

--_____________________________ Signal Transistors

2N4424


LIMITS

CHARACTERISTICS SYMBOL MIN. MAX. UNITS

Collector Cutoff Current (VCS = 40V) Icso - 30 nA

(VCS = 40V, TA = 100°C) ICOO - 10 ~A

(VCS = 40V base·emitter junction short·circuited) ICES - 30 nA

Emitter Cutoff Current (V"R = 5V) '.E.oo - 100

DC Forward Current Transfer Ratio (VCE = 4.5V, Ic = 2 rnA) hFE 180 540 -

Collector Emitter Breakdown Voltage (lc = 10 rnA) V(SR)CEO 40 -

Collector Base Breakdown Voltage (lc = 1 0 ~) V SRICSO 60 -

Emitter Base Breakdown Voltage (IE = 0.1 ~A) V SR ESO 5 - V

Collector Saturation Voltage (Is = 3 rnA. Ie = 50 rnA) ~ - 0.3

Base Saturation Voltage (Is = 3 rnA, Ic = 50 rnA) VSE sat - 0.85

Small·Signal Forward Current Transfer Ratio (VCE = 4.5 V, Ic = 2 rnA, f = 1 kHz) hie 180 - -(VCE = 10V, I" = 1 rnA, f = 1 kHz) 180typ.

Inputimpedance(VCE = 10V, Ic = 1 rnA, f = 1 kHz) hie 5100typ. Q

Output Admittance (VCE = 10V, Ic = 1 rnA, f = 1 kHz) hoe 14typ. ~mhos

Voltage Feedback Ratio (V CE = 10V, Ic = 1 rnA, f = 1 kHz) hre 0.27typ. x 10·3

- COLLECTOR-TO-EMITTER VOLTAGE (Vee) 5V ~ :5.400

AMBIENT TEMPERATURE (TA) '" 25°C

0 ;:

" f- !--t-a: I---'" ~ 300 .. V \ z V " '" f-

I-

/V 1\ I-

15200

'" V \

'" ::> f-0 0

~ 100 il a: ~ f-0 0 0

2 4 6 • 2 4 6 • 2 4 6 • 2 4

~ U COLLECTOR-TO-EMITTER VOLTAGE (Vee) - 5 V

" .. 2 COLLECTOR _C~RRENT (I ) = 2 mA

il"'N

t5*~ 1.5 r- l-I-f-~Zl- f-- f-g~~ ....... +-~~~

1 )...-- .....

• :d~~ ~ ...... "",- 6 :I ::>0

~ 9~ Z '" 4

- 40 100 20 o 20 40 60 80 0·1 1 10

COLLECTOR CURRENT (I C) - mA 100 AMBIENT TEMPERATURE (T A) _ 0 C

92CS-42755 92CS- 424~S

Fig. 1-Typical dc forward current transfer ratio characteristics. Fig, 2 - Normalized de forward current transfer ratio characteristics.

1DOO COLLECTOR-TO-EMITTER VOLTAGE (VeE) 0 10V I I I I

AMBIENT TEMPERATURE (TA) = 25°C

800

" E

~/IB"'20

'" lDOO ww 1:" --" ::1;1- 800

6~~ - AMBIENT TEMPERATURE ~~.:-600 _ (TA) '" 100°C 1/1 0t=CC 1-'11("'400

~ ~~~ -S!;(--20

;:::-TA~25°C 0" -0

g 600 l-

I iii '" '" 1 ::> 0

400 '" 0 II I-

~ 0 200 0

/ 0 J

2 4 6. 2 4 6. 2 4 6. 2 4 6. 0.1 10 100

COLLECTOR CURRENT (Ie) - rnA

1000 0.2 0·4 0.6 0.8 1.2 1.4

COLLECTOR-TO-BASE VOLTAGE (YaE) - v

92CS-427~4 92CS-42753

Fig. 3 - Typical collector-to-emitter saturation voltage characteristics. Fig. 4 - Typical collector current characteristic.

41

Signal Transistors

2N4424

e ~ g .. z w II: II: :> u II: 0 I; w ::I 0 u

~ .... r-~~ ~ 1/ I-

(TA),2S'C

q':-~ V V r---l-f-200 ....

~ ..,.-r- l-

W V ~ -160

~ ...... -- la- 1m" V -120

SO

40

0 SASE CURRENT (1s) , G.2 IlIA

o 23. 6 7 S 9 10

COLLECTOR·TO-EMITTER VOLTAGE (VCE)' V 92CS-42165

Fig. 5 - Typical collector current characteristics.

::: ~ I, 1 MHz ,1. .L..U., .L "'f- AMSIENTTEMPERATURE (TAl' ZS'C-

~ '&.:. ·i -au !!ii' III Z u" ~!: !:~ :a «1!; .... :> ..

~6

26 ~ 24

"-~ 22

20

'" .S I' 16

I. 12

10

s":::: 1-... ~ 6

• 2

•

t-

• • • • • • 10

COLLECTOR· TO-BASE VOLTAGE (VCI) • V EMITTER· TO·SASE VOLTAGE (VES)' V

• •

92CS-42477

0.1

zO /.~

,....... (TAl = ZS'C

./ IS ,. V /' V

16 f'" ......

~ I. V ./

g ~ V V 1I 12 .. t,..- I---V J z w to II:

~ V /1 II:

V :> u S~ II:

~ J I 0 I; 6

j I 0 4

/ u

2 BASE CURRENT (IB) - 20 pA

IS 10pA \ o 10 20 30 40 50 60 70 80

COLLECTOR-TO·EMITTER VOLTAGE (VCE)' V

92C$-42787

Fig. 6 - Typical collector currect characteristics.

4 6 8 1 4 6 8 10


••• 100

92CS-42763

Fig. 7- Typical input and output capacitance characteristics. Fig. 8 - Typical gain-bandwidth product characteristics.

42




2N5172, MPS5172, PN5172, 2N6076

Silicon Transistors

II TO-92 TO-98

The GE/RCA 2N, MPS, PN5172 are NPN and 2N6076 is a PNP silicon transistors designed for general purpose applications. The planar, passivated construction assures excellent device stability and life. This high performance and high value is made possible by advanced manufacturing techniques, epoxy encapsulation and utilization of full line beta

MAXIMUM RATINGS, Absolute-Maximum values:

distribution. Significant savings may be realized by designing equipment utilizing these "full line distribution" type transistors.

PNP values are negative; observe proper polarity. These types are supplied in JEDEC TO-92 package (MPS5172, PN5172) and in JEDEC TO-98 package (2N5172, 2N6076).


COLLECTOR 10 EMITTER VOLTAGE (VeEel ........................................................................... 25 V COLLECTOR 10 BASE VOLTAGE (Vesel .............................................................................. 25 V EMITTER TO BASE VOLTAGE (VEBel ................................................................................... 5 V CONTINUOUS COLLECTOR CURRENT (le)(Note 1) .................................................................. 100 rnA TOTAL POWER DISSIPATION (T A :s; 25·C)(PT)(Note 2) ................................................................ 360 mW OPERATING TEMPERATURE (TJ) ......................................................................... -55· to +150·C STORAGE TEMPERATURE (T STG)' ........................................................................ - 55· to + 150·C LEAD TEMPERATURE, 1116" ± 1132" (1.58mm ± O.8mm) from case for 10 sec. max. (T J ...................................... + 260·C

NOTES: 1. Determined from power limitations due to saturation voltage Elt this current. 2. Derate 3.6mW/·C increase in ambient temperature above 25°C

File Number 2061

43

D


2N5172, MPS5172, PN5172, 2N6076

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (TA) = 25°C Unless Otherwise Specified

LIMITS

CHARACTERISTICS SYMBOL MIN. MAX.

Collector Cutoff Current (VCB = 25V) ICBO - 100

(VCB = 25V. TA = 100·C) ICBO - 10

(V CB = 25V. base-emitter junction short-circuited) ICES - 100

Emitter Cutoff Current (VEB = 5V)-5172 IESO - 100

(VER = 3V)-6076 IFRO - tOO

DC Forward CurrentTransler Ratio (VCE = 10V.lc = tOmA) hFE(I) 100 500

Collector Emitter Breakdown Voltage (Ic = 10 rnA) V(SRICEO 25 -Collector Saturation Voltage (Ie = lOrnA. Is = 1 rnA) VCE/sat - 0.25

Base Saturation Voltage (Ic = lOrnA. Is = 1 rnA) VSE(satl - O.B

Base Emitter Voltage (Vr:F = 10V.I~ = 10mA) VB~ 0.5 1.2

Small-Signal Forward Current Transfer Ratio (VCE = 10V.lc = 10mA.I= 1kHz) h,. 100 750

Output CapacHance. Common Base (Vcs = 10V.IE = O. f = 1 kHz) Cob 1 13

Gain Bandwidth Product (VCS = 5 V.lc = 2 rnA) fT 200 Typ.

(1) Typically a minimum of 50% of the distribution will have hFE > 150 at stated conditions.

Note: Polarities are absolute.

44




TO-9S Package Lead 1 - Emitter Lead 2 - Collector Lead 3 - Base

UNITS

nA

,..A

nA

-

V

-pF

MHz

______________________________ Signal Transistors

2N5232, 2N5232A

Silicon Transistors

I TO-98

The GE/RCA 2N5232 and 2N5232A are planar epitaxial passivated NPN silicon transistors designed especially for low noise preamplifier and small signal industrial amplifier applications. The units feature low collector saturation voltage.


tight beta control and excellent low noise characteristics. The 2N5232A includes a noise figure specification. These types are supplied in JEDEC TO-98 package.


COLLECTOR TO EMITTER VOLTAGE (VCEO) . . . . . . . . . . . . . ........ 50 V EMITTER TO BASE VOLTAGE (VESO)' . . . . . . . . . . . . . . ........... 5 V COLLECTOR TO BASE VOLTAGE (Vesel. . . . . . . . . . . . . . . . . .. . . . . . ........ 70 V CONTINUOUS COLLECTOR CURRENT (lc)(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 100 mA TOTAL POWER DISSIPATION (T A S 25°C) (PT) (Note 2). . . . . . ...... 360 mW OPERATING TEMPERATURE (TJ) .................... ....................... .............. ... -55°to + 125°C STORAGE TEMPERATURE (T STG)" . . . . . . . . . . .. . . . . . . . . . . .. . . . . . . . .. .. . . . . . ....................... - 55° to + 150°C LEAD TEMPERATURE. 1/16" ± 1/32" (1.58mm ± 0.8mm)lrom case lor lOs max. (T L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...... + 260°C

NOTES: 1. Determined Irom power limitations due to saturation voltage at this current. 2. Derate 3.6mW/oC increase in ambient temperature above 25°C

File Number 2063

45

D I

Signal Transislors ______________________________ _

2N5232, 2N5232A


CHARACTERISTICS

Collector Cutotl Current (VCB = SOV)

(VCB = SOV. TA = l00·C

Collector Cutoff Current (V CB = SOV. base-emitter junction short-curcuited)

Emitter Cutoff Current (VEB = SV)

DC Forward Current Transler Ratio (VCE = SV,lc = 2 rnA)

(V CE = SV, Ic = 100,.A)

Small-Signal Forward Current Transler Ratio (VCE = S V,lc = 2 rnA, 1 = 1 kHz)

Collector Emitter Breakdown Voltage (Ic = 10 rnA)

Collector Base Breakdown Voltage (Ic = 10,.A)

Emitter Base Breakdown Voltage (IF = 10 ~A)

Collector Saturation Voltage (Ic = lOrnA, IB = 1 rnA)

Base Saturation Voltage (Ic = lOrnA, IB = 1 rnA)

Base Emitter Voltage (VCE = 10V,Ic = 2 rnA)

Output Capacnance, Common Base (Vce = 10V,IE = 0,1= lMHz)

Noise Figure (Ic = 100,.A, VCE = S V, RR = SkQ,1 = 1 kHz, BW = 15.7 kHz) For 2N5232A only.

*Typically, a minimum 01 95% olthe distribution is above this value.

* * Pulse conditions: 300 ~s pulse width, ;:S 2% duty cycle.

46

700 COLLECTORiiO-EMITTER VOLTAGE (VcEI ~ 5 V 0:

600 E I ..... .1-................. z :!500

,~c ........ 1-"'" .c \ 1--

ffi~400 r--~ ",.~ 12 :t\l,,~\1 ~ ......... B~ ~,,~

,,0: r-: .. S\~~ 0:

~ltOO

~i'C' ~ -.. tOO g

0

• • •• 2 4 • • • • 0 •• • • •• 0.01 0.1 I 0 10 COLLECTOR CURRENT (Icl • mA

92C&-42461

o

Fig. 1-Typical de forward cunant transfer ratio characteristics.

LIMITS

SYMBOL MIN. TYP. MAX. UNITS

ICBO - - 30 nA

ICBO - - 10 ,.A

ICES - - 30 nA

lEBO - - SO

hFE 2S0 - 500 -- 170* -

hie 2S0 - 7S0 -V/RRICEO** SO - -

V/BRICBO 70 - -VlBRIEBQ 5 - -

V VCE/san** - - 0.12S

VBElsa!}** - - 0.78

VBE O.S - 0.9

Ccb - - 4 pF

NF 1 5 dB

0: COLLECTOA·TO·EMITTER VOLTAGE (VeE) = 5 V

-$

COLLECTOR CURRENT (Icl ~ 10 mA

~ - --- -- j r--r

0: I.S 1 ./ l-I- -- ~ z .. 0: /' 0: :::> Ulii ./ " .. o:!> .cal Ii= ./ ~:! U

/' " ~ ./ i :::; ....- I .c

QSI" Ii 0: a z I

- -50 30 10 10 30 50 70 90 110

AMBIENT TEMPERATURE (TAl"C

92CS-42460

Fig. 2 - Normalized de forward-cunant transfer ratio characteristic.

Signal Transistors

2N5232, 2N5232A

1 COLLECTOR-TO-BASE VOLTAGE (VCB) "8 V

0 .. / g I- / z .. 0:

1/ 0: ~ U , It 0

/ I-~ U ..

I .. e

1/ .. 6 , I;-

EMITTER-TO-BASE VOLTAGE (VEB) - V

4 2 0 , FREQUENCY (I) = 1 MHz: 0

~ • 2 ~

~ 8 4

J c"bo 7 6 .. --.......... u 6 1\

8 .. z

............. 10 u

~ Z 5, c

U l-

e U IL :f- "-. 12 e e CCbo

IL u 14

e I-

u ~ l-lL 2 16 ~ l- lL ~ , ! 0 18

0: 7 e u / j 0

0 20 o 10 15 20 25

COLLECTOR TO BASE VOLTAGE (VeE) - v 92C5-42462

u

/ Fig. 4 - Typical input and output capacitance characteristics.

20 o 20 40 60 80 '00 ,20 AMBIENT TEMPERATURE (T A) - 0 C

92CS-42463

Fig. 3 - Typical collector cutoff current characteristic.


Lead 1 - Emitter Lead 2 - Collector Lead3-Base

47

Signal Transistors _;...... __________________________ _

2N5249, 2N5249A

Silicon Transistors

I TO-98

The GE/RCA 2N5249 and 2N5249A are planar epitaxial passivated NPN silicon transistors designed especially for low noise preamplifier and small signal industrial amplifier applications. The units feature low collector saturation voltage,


tight beta control and excellent low noise characteristics. The 2N5249A includes a nOise figure specifiation. These types are supplied in JEDEC 10-98 package.


COLLECTOR TO EMITTER VOLTAGE (VCEel ........................................................................... 50 V COLLECTOR TO BASE VOLTAGE (V csel .............................................................................. 70 V EMITTER TO BASE VOLTAGE (VEsel ................................................................................... 5 V CONTINUOUS COLLECTOR CURRENT (Ie) (Note 1) .................................................................. 100 rnA TOTAL POWER DISSIPATION (TA :S 25°C) (PT) (Note 2) ................................................................ 360 mW TOTAL POWER DISSIPATION (TA:s 55°C)(PT)(Note2) ................................................................ 260 mW OPERATING TEMPERATURE (TJ) ......................................................................... -55° to + 125°C STORAGE TEMPERATURE (T 8TG)' ........................................................................ - 55° to + 150°C LEAD TEMPERATURE, 1/16" ± 1f32" (1.58mm ± 0.8mm) from case for 1 Os max. (T Ll ......................................... + 260°C

NOTES: 1. Determined from power limitations due to saturation voltage at this current. 2. Derate 3.3mW/oC increase in ambient temperature above 25°C

File Number 2064 48 _______________________________________________________________ _

- ______________________________ Signal Transistors

2N5249, 2N5249A

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (TA) " 2SoC Unless Otherwise Specified

CHARACTERISTICS

Collector Cutoff Current (VCB = SOV)

(VCB = SOV, TA = tOO°C

Collector Cutoff Current (V CB = SOV, base-emitted junction short-circuited)

Emitter Cutoff Current (VEB = SV)

DC Forward Current Transfer Ratio (VeE = S V,le = 2 mAl

(VCE = SV, Ie = 100j'A)

Small-Signal Forward Current Transfer Ratio (VCE = SV,le = 2mA,f = 1 kHz)

Collector Emitter Breakdown Voltage (lr. = 10 mAl

Collector Base Breakdown Voltage (Ie = 10 j'A)

Emitter Base Breakdown Voltage (IE = 10 I'A)

ColiectorSaturationVoltage(lr. = 10mA,IB = 1 mAl

Base Saturation Voltage (Ie = 10 mA, IB = 1 mAl

Base Emitter Voltage (V r.E = 10V, Ir. = 2 mAl

Output Capacitance, Common Base (VeB = 10V,IE = 0, f = 1 MHz)

Noise Figure (Ie = 100 I'A, VeE = S V, Rg = S kQ, f = 1 kHz, BW = IS.7kHz) For2NS249Aonly.

'Typically a minimum of 9S% of the distribution is above this value.

"Pulse conditions: 300l'S pulse width, :s 2% duty cycle.

1000 COLLECTOR-TO-EMITTERI V 1\ _ VOLTAGnrE) ~ 5 V V ~ ;'8 0

k V ;: .. -'" ,\" <Ie '" ~ il! ~."':..--..

111.1~~~~~~ z V ..

'" .. -.. ~'\~ ... ~ z W Ib\~~ ~400 ~ ... " v~ 0 0 I-'" ; 'f",:. ~&s<>C ~ 200 --0 F:-I--0

0

0.01 4 • 8

0.1 4 • 8

1 4 .8

10 COLLECTOR CURRENT (Ie) - rnA

.\ \

1\

-""'r--

4 • 8 100

Fig. 1-Typical de forward-current transfer ratio characteristics.

LIMITS UNITS

SYMBOL MIN. TYP. MAX.

ICBO - - 30 nA

- - 10 I'A

ICES - - 30 nA

lEBO - - SO

hFE 400 - 800 -- 300' -

h'e 400 - 1200 -V1RR1r.EO', SO - -

V1BR1CBO 70 - - V

V1BR)EBO S - -Vr.EIsat" - - 0.12S

VBEIsal\" - - 0.78

VBE O.S - 0.9

Ccb - - 4 pF

NF - - 3 dB

'" • V W 4 ... /' .. z .. 2

'" / .. .. z 1 / W

'" '" 1/ " 0_ 8 OW / ~~ ~o / ~~ • II 0 0 0

/ W N ::l .. 4 :IE

ICOLLECTOR-TO-EMITTER VOLTJE (VCE) ~ 5 V '" 0 Z

0.3 COLLECTOR CURRENT (Ie) = 10 mA - 65 -35 -5 25 55 85 115 145

AMBIENT TEMPERATURE (TA) - "C

92CS-42456

Fig. 2 - Normalized de forward-current transfer ratio characteristic.

49


2N5249, 2N5249A

EMITTER-TO-BASE VOLTAOE (VEB) - v .. 8 . • 0 4

/ .. g 2

Ii / IU 8 II! • II! ::> 4

" .. 2 ..

/ 0 !:i " 8 IU • :! 4 .. J

7 6 5 4 o

9~ 0-

.. 8~

t

';'" .. .. ~ 2 ';'"

11 7 3 J B ~ IU 6

~ 4 ;;;

" -z ~ " § '\ 5 ! ~fb= =- --I'--.. 69 .. 4, b' c '= ..

u 7 is .. 3 Cabo .....::::, ~ ::> .. .. .. ~ 2

/ II:

B l 2 ::> ~ 0

1

50

e 8

" • IU 4 .. / .. 0 2 " / - -60 30 0 30 60 90 120 15C

AMBIENT TEMPERATURE (TAl-'C 92CS-42459

'--0 o 10 I' 20

COLLECTOR-TO-BASE VOL TAOE (VCB) - V 92CS-42457

25

Fig. 4 - Typical input and output capacifanes character/stics.

Fig. 3 - Typical collector cutoff current charectarlstic.



'\


2NS30S, 6, 6A, GESS30S, 6, 6A

Silicon Darlington Transistors

II TO-92 TO-98

The GE/RCA 2N5305, 06, 06A and GES5305, 6, and 6A are planar, epitaxial, passivated NPN silicon Darlington transistors designed for preamplifier stages requiring input impedances of several megohms or extremely low-level, high-gain low-noise amplifier applications. These types can


COLLECTOR TO EMITTER VOLTAGE (VCEO) ... EMITTER TO BASE VOLTAGE (VEBO) .... . COLLECTOR TO BASE VOLTAGE (VCBO) ..... . CONTINUOUS COLLECTOR CURRENT (Ie> . . . . . ........ . COLLECTOR CURRENT (PULSED)" (Ie> . . . . . . . . ............ .

be used in medium-speed switching circuits in consumer and industrial control applications.

The 2N5305, 6, and 6A are supplied in JEDEC TO-98 package, the GES5305, 6, and 6A are supplied in JEDEC TO-92 package.


. ...... 25V ............... 12V

CONTINUOUS BASE CURRENT (IB) ................... .

. .25V . .. 300 mA

. .500mA . ... 50mA

. 400 mW TOTAL POWER DISSIPATION (T A ::s; 25°C)(PT) ................................... . DERATE FACTOR (T A > 25°C) . . . . . . . ........ . OPERATING TEMPERATURE (TJ) .................................... . STORAGE TEMPERATURE (TSTG). . . . . . . . . . . . . . . . . . . . . . . . . . ........ . LEAD TEMPERATURE, 1116" ± 1132" (1.58mm ±0.8mm) from case for 10s max (T 0. . . ........... . ·PulsedCondilions: PUIS8Widlh:s 300~s, Dulyfaclor:s 2%.

. .... 4mW/oC . ...... -65°10 +125°C

. .. -65° 10 + 150°C ........ +260°C

File Number 2065

51


2N5305, 6, 6A, GES5305, 6, 6A

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (TAl = 25°C Unless Otherwise Specified

CHARACTERISTICS

Collector· To·Emitter Breakdown Voltage

(Ic = 10mA,Is = 0)

Collector· Ta-Base Breakdown Voltage

(Ic = O.I,.A,IE = 0)

Emitter· To·Base Breakdown Voltage

(IE = O.I,.A,lc = 0)

DC Forward Current Transfer Ratio

(Ic = 2mA, VCE = 5V) 2N5305, GES5305

(lc = 100mA, VCE = 5V) 2N5305, GES5305

(lc = 2mA, VCE = 5V) 2N5306, GES5306A

(Ic = 100mA, VCE = 5V) 2N5306, GES5306A

Collector· Ta-Emitter Saturation Voltage

(lc = 200mA, Is = 0.2mA)

Base·To·Emitter Saturation Voltage

(lc = 200mA, Is = 0.2mA)

Base· To·Emitter Voltage

(lc = 200mA, VCE = Sv)

Collector-Ta-Base Cutoff Current

(V~B = 2SV, IE = 0)

(VCB = 25V, IE = 0, TA = 1000)C)

Small-Signal Current Transfer Ratio

(VCE = SV,lc = 2mA, f = 1 KHZ) 2NS30S, GES5305

(VCE = 5V,Ic = 2mA, 1= 1 KHZ) 2NS306, 6A, GESS306, 6A

(VCE = 5V,IC = 2mA,I = 10MHZ)

Input Capacitance

(VER = 0.5V, I = 1 MHZ)

Output Capacitance

(V~B = 10V, 1= 1 MHZ)

Input Impedance

(V~E = 5V, Ic = 2mA, I = 1 KHz)

Gain-Bandwidth Product

(VCE = 5V,IC = 2mA, 1= 10MHz)

Noise Figure

(VCE = 5V,Ic = O.SmA, Rg = 160 kO,

1= 10 Hz, to 10 kHz, Bandwidth = 15.7 kHz) 2N5306A, GES530SA

52



LIMITS

SYMBOL MIN. MAx.

BVCEO 25 -

BVCBO 25 -

BVESO 12 -

2,000 20,000

hFE 6,000 -7,000 70,000

20,000 -

VCE(sat) - 1.4

VBE(sat) - 1.6

VSE - I.S

ICBO - 100

- 20

hie 2,000 -7,000 -

Ihlel 15.6 -

Ceb 10.5 Typical

7.6

Ccb Typical 10

650 Typical

IT 60 -

195

eli Typical 230


TO-98 Package Lead 1 - Emitter Lead 2 - Collector Lead 3 - Base

UNITS

V

-

V

nA

~A

-

dB

pF

KQ

MHZ

nV/y"Hz


2 4 68 2 4 68 2 4 68 102 103

68 0.1 10

COLLECTOR CURRENT (Ie) - mA 92C5-42632

Fig. 1 - Typical de forward-current transfer ratio characteristics.

40 0: W

lli z e 0: I-I- 30

1!i 0: 0: ::I-y~ ~s. eO ~;:

20

o:e ~o: 0 0 0 W 1.0 N

8 ~ 6 :I 0: 4 0

2 z 0

COLLECTOR-TO-EMITTER VOLTAGE (VCE) ~ SV

l~~~ tt C; t-

<> .~;;.-

'~ 1-/ ~

~ I

~ ... t-

~ .' ,

\(, , ;

60 40 20 0 20 40 60 80 100 120140 AMBIENT TEMPERATURE (TA) -"C

92CS-42629

Fig. 3 - NormaHzed dc forwarcJ.current transfer ratio characteristics.

2.2 leIla - 1000 I z 2

0

~> 1.8

i=!i 1.6 c. lOW

ffi~':4 ~ ~ 1.2 :Ie M;I~ 1 00 ':"> :: Q.8 e ..

O·

-

I ~ .- -.-_ssolc -- .I. _2So C ..,-.,./

EN~~E"PER~-~ ...... ./' ,,"81 c.--

,Joc_ ~

_r- ~+ I 2 4 6 8 2 4 6 8 2 4

10 102 COLLECTOR CURRENT (Ie) - mA

92CS-42636

I-'

6 8

Fig. 5- Typical base-fo.emitter saturation voltage characteristics.

2N5305, 6, 6A, GES5305, 6, 6A

.. 3: COLLECm-Trnli" tL iiii (VCE) I~ j I z

II 1111 III 1)('/ --r-. W 0: 0:

3 ::I

AMB1EmEJpE~A~~~E ;TAJ ~12UC C( 0-D~ ,.., ~::. 2.5

11. \ ~Q I\. 0:1-

oe 2 ... 0: V1Joc_ 00:

~~ t wz

~io" ~ 1\ Ne

~e: 1 :I ;:::: 11'" 0: r-: 0 O.~ z ~

0 4 0.012 4 6'b., 2 468, 2 4 6~O 2 46~022 68103

COLLECTOR CURRENT (Ie) - mA 92C5-42633

Fig. 2 - Normalized dc forward-current transfer ratio characteristics.

1.4 lelia" 1000 ) IJ z 1.3---0 ;: e 0: 1.2--i"! /" ~>

1--_.Soc f..--V 0:':- ~ ~.

i~ 0.8 ./

w~ . -(;~b-2rt~ V i OW "MBIENT TEMPERATURE ~ V

~~ 0 .•

'~1 0:1- I 0-,

-+-1-0 O~-r- I ~>

i-tr 0 0.2-

I 0

0 2 4 6 8 2 4

10 I) 8'02 2 4 6 8'0 3

COLLECTOR CURRENT IIC) - mA

Fig. 4 - Typical collector-to-emitter saturation voltage characteristics.

e E

g I-z W 0: 0: ::I 0 0: 0 I-0 ~ S 0

220 AMBIENT TEMPERATURE ~ r-r 200 I--(TA) ~ 25°C

180 I. "" 1-!

5 PAl-I. 140 - r ---. '""l':-~~-

4"A 120 .-r--- --

'I 3J-:-~ 100-r--' 80 --6 2"A

t 20

BASE CURRENT (I a) : 1 J.l.A

0 , I i

o 0.2 0·4 0.6 0.8 1 '.2 1.4 1.6 1.8 2

COLLECTOR-lO-EMITTER VOLTAGE (VeE) - y

92C9-4263'

Fig. 6 - Typical output characteristics.

53


2N5305, 6, 6A, GES5305,6, 6A

.... TA- 25°C J /' 1!4 ~ 220 , V I~~

'" V V E t

U t60 V • t.---e .. --z t'lO

V l V .. a: a: tOO ~ :> i--u

toO a: V t 80 2""_ ~ I-..

::I 60 0 u 40

00 BASE CURRENT (IB} - 1 pA

0 I I I I o 1 2 3 4 , 6 7 8 9 10

COLLECTOR-TO-EMITTER VOLTAGE (VCE} - v 92CS-426l0

Fig. 7- Typical output characteristics.

COLLECTOR-TO-BASE VO TAGE/

Ii 2 _(VCB}-20V

/ .. 10' a:

a: • a 6

it 4

/ 0 2 .. / at102

=:. 8 c- 6

6 ~ 4 / ,,:,:::. 2 a: / t to. .. 6 oJ oJ

4 / 0 U

2

-30 0 30 60 90 AMBIENT TEMPERATURE (T A) • 0 c

92CS-426U

2.2 COLLECTOR-TO-EMITTER VOLTAGE (VCE} - 5 V -1 I

i:~c··t ~ ~~ j-.-::-; ~7

RE\~"\- ....--- t.4 . 1-- 25°9° I

a: t2 f----i.MBIEN~ TE"'P!!-.. "'..:;:;u~_t''++_I--E t 1--·ck..r-1"'-----~-H i ,~ ..... _ ~ 0.8 _r""" .. 0.6 1 ~p--! ~

0041- +--~-+-H

24682468 10 102


I -~

4 6. 10'

92CS-42635

Fig. 8 - Typical transfer characteristics.

4 EMITTER·TO·BASE VOLTAGE r=17 .. 2 (VEB}-5V

z 17 .. a: to' a:

" • U 6 .. 4 .. 0 / !it 2

»;.:. t.1 1/ ~ i 6 o~ 4 t;- o a: .. ~ t :I 6 w

4/

3O-200f0 0 10 00 30 40 !IO 60 70 80 90 AMBIENT TEMPERATURE (TAJ· °c

92CS-426U

Fig. 9 - Typical coltector-to-base cutoff current characteristic. Fig. 10-Typlca/emilter-to-base cutoff current characteristic.

54

COLLECTOR·TO·EMITTER VOLTAGE (VeE) '" 5 V OA AMBIENT TEM,,-ERATURE (TA} - 5 V

• ~PTIMU~ SOURCE RESISTANCE (Rg}, Rg - ~: '---+-----1

I~ 0.3' __ .......... _-f"lt"'('~110 ~ r ~_+---l---e--I------+-~,-.. T"'--~-.,-.".--l3 i 1 ............... ~~.... w ;;;0.21----+---+--~""+_j,_--""'_----.~q:..----1 6 0z~ , Z III _ .... - 2 i ~ ~~====~--~--~~--~====~~~:F======~======:j c O.1 r .,,(1 kHz § O>!:; I. (10 kHz} I. (1kHz} I __ .~~ - __ - u

01- .1

O.t

-- ~i ;: Oii (10 kHz

NOTE:

I

COLLECTOR CURRENT (IC} - mA

DUE TO THE NOISE CHARACTERISTICS OFTHIS DEVICE VERSUS FREOUENCY, CALCULATION OF NOISE FIGURE (NF}FROM'ii,lfiVALUESI8NOTACCURATE[ASISTHE CASE WITH FIELD-EFFECT TRANStSTORS (FET.)].

92CS-42629

Fig. 11-Equivalent Input noise-voltage and noise-current characteristics


2N5307, 8, 8A, GES5307, 8, 8A


II TO-92 TO-9S

The GE/RCA 2N5307, 08, 08A and GES5307, 8, and 8A are planar, epitaxial, passivated NPN silicon Darlington transistors designed for preamplifier stages requiring input impedances of several megohms or extremely low-level, high-gain low-noise amplifier applications. These types can


be used in medium-speed switching circuits in consumer and industrial control applications.

The 2N5307, 08, and 08A are supplied in JEDEC TO-98 package, the GES5307, 08, and 08A are supplied in JEDEC TO-92 package.


COLLEC1OR 10 EMITTER VOLTAGE (V CEO) . . . . . . .. . . . .. . . . . . . .. . . .. . . . . . . . . .. .. . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . ... 40 V EMITTER 10 BASE VOLTAGE (VEBol.. ...................................................................... . ..... 12V COLLEC1OR 10 BASE VOLTAGE (Vceol .............................................................................. 40 V CONTINUOUS COLLEC1OR CURRENT (Ie;) ......................................................................... 300 mA COLLEC1OR CURRENT (PULSED)" (Ic) ............................................................................ SOO mA CONTINUOUS BASE CURRENT (Ie) ................................................................................ SO mA 10TAL POWER DISSIPATION (T AS 2S0C)(PT) ...................................................................... 400 mW DERATE FAClOR (T A > 2S0C) ................................................................................... 4 mW'oC OPERATING TEMPERATURE (T Jl . . .. . . .. .. . . . . . . .. . . . . .. .. .. . . .. .. . .. . . . . .. .................... - 6So to + 12SoC S10RAGE TEMPERATURE (T STG)' ........................................................................ - 6So to + 1S0°C LEAD TEMPERATURE, 1116" ± lf32" (1.S8mm ± 0.8mm) from case for 1 Os max (T U .......................................... + 260°C

"Pulsed Conditions: Pulse width S 300 I's, Duty factor S 2%.

File Number 2014

_______________________________________________________________ 55


2N5307, 8, 8A, GES5307, 8, 8A

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (T pJ = 25°C Unless Otherwise Specified

LIMITS


Collector·To·Emitter Breakdown Voltage

(Ie = 10mA,Ie = 0) BVCEO 40 -Collector· To-Base Breakdown Voltage

(Ie = O.II'A,IE = 0) BVceo 40 - V

Emitter-To-Base Breakdown Voltage

(II' = O.I~,lc = 0) BVEeo 12 -DC Forward Current Transler Ratio

(Ic_ = 2mA, V CE = SV) 2NS307, GESS307 2,000 20,000

(Ic = 100mA, VCE = SV) 2NS307, GESS307 hFE 6,000 - -(lc = 2 mA, VCE = SV) 2N5308, GES5308A 7,000 70,000

(Ie = 100mA, VCE = 5V) 2NS308, GES5308A 20,000 -Collector-To-Emitter Saturation Voltage

(Ie = 200mA, Ie = 0.2mA) VCE(sat) - 1.4

Base-To-EmiUer Saturation Voltage

(lc = 200mA, Ie = 0.2mA) Vee!sat) - 1.6 V

Base-To-Emitter Voltage

(Ic = 200mA, VCE = Sv) VSE - 1.5

Collector-To-Base Cutoff Current

(Vca = 25V,IE = 0) Iceo - 100 nA

(VCS = 2SV,IE = 0, TA = 1000)C) - 20 I'A Small-Signal Current Transler Ratio

(VCI' = 5V,Ic = 2mA, I = 1 KHZ) 2N5307, GESS307 hie 2,000 -(VCI' = 5V,IC = 2mA, f = 1 KHZ) 2N5308, 8A, GES5308, 8A 7,000 - -(VCE = 5V,IC = 2mA, 1= 10MHZ) Ihlel 15.6 - dB

Input Capacitance

(VI'S = O.SV, I = 1 MHZ) Cab 10.5 Typical pF Output Capacitance 7.6

(~= 10V, 1= 1 MHZ) Ccb Typical 10

Input Impedance

(VCE = 5V,Ic = 2mA, I = 1KHz) 6S0Typicai KQ

Gain-Bandwidth Product

(VCE = 5V,Ic = 2mA, 1= 10MHz) 'T 60 - MHZ

Noise Figure

(VCE = 5V,Ic = 0.6mA, Rg = 160 kQ, 195

I = 10Hz, to 10kHz, Bandwidth = 15.7 kHz) 2N5308A, GES5308A en Typical 230 nV/yHz

56

0: ~ ~~~~i~:~::~E:!'~~~iR(+~)L~:~~ (VeE) = 5 V ~ ~ .. 4 I I z

C 2 0: I I ..

1056 .. ~w 6-r- e- -j _,~ o:~ 4 ~, ,,, ::1- ~S5 0

~ ~~ 2

- f- .",G ~S5301

~~ 1048 'l.""G -

;I 6 0: 4 0 .. 0 2 - -0 103

2 68 2 4 68 2 4 68 2 4 68 0.1 10 2 10' 10

COLLECTOR CURRENT (I c) ~ rnA

Fig. 1 - Typical de forward-current transfer ratio characteristics.

0: 40

w .. .. z c a: .. .. 30 z W 0: 0: ::l-ow 0" 0'" o:- 20 cO ;1>= o:c ~o: 0 0 0 w 1.0 N

8 ::; c • :I 0: 4 0

2 z 0

COLLECTOR-TO-EMITTER VOLTAGE (VCE) ~ 5V

\)/ ~'-0" ac;

.!J\::! 0' t-(j .~/~

,y ~?-v :

~ ... t'

~ .' 0

,C- o

60 40 20 0 20 40 60 80 100 120140 AMBIENT TEMPERATURE (T A) _ °C

92CS-42629

Fig. 3 - NormaHzed de forward-current transfer ratio characteristics.

468 468 2 10 10'

COLLECTOR CURRENT (IC) - mA 92CS-42636

4 6 8 103

Fig. 5 - Typical base-to-emltter saturation voltage characteristics.

Signal Transistors

2N5307, 8, 8A, GES5307, 8, 8A

.. 4 COLLECTOR-TO-EMITTER VOLTAGE (VeE) 1= i r z

3.5 III i--w 0: 0<.1/ 0:

3 ::I

~ 0-oW

1. 1_ a .. AMBIENT TEMPERATURE (TA) = 25°C ~ e 2.5

V1 1\ ;lQ 0:" Oc 2

V1;Jo c-.-. .. 0: 00: o~ I aUl ~ wz

~ 1\ ~~ I Ii"" :I f..--t::: a:

0 05 z P 0 0.012 4 6~).1 2 468, 2 468'0 2 4 6~02 2 468'03

COLLECTOR CURRENT (I c) - mA 92CS-42633

Fig. 2 - Normalized de fQrward-cu"ent transfer ratio characieristics.

1.4 leIla - 1000

~ 1.3~--l--+--l++------1---+--+++---l---I-H-I ~ ~ 1.2f--· -- _._-f-

:i> I .. ,,)" 0: • 1'-- - r=-~"""'-+--~: _ .... c V"" VI iii ~ 0.81=~==l-~--j-:*=------r==t::]Joc / '\'~ \~ __ \~25 ............. ,...-ow AMBIENT TEMPERATURE ~:.- ~V ~~ 0,6 1OOOCr----0 ... ~~ O~~-+--~·~+~· ._--- c--- .. c-----::l 8 0.2~--+---+- +++-+--+-+-I-+--+-++-H

0. 4 6 810 4 6 810 2


Fig. 4 - Typical collector-to-emitter saturation voltage characteristics.

c ~ g .. Z w a: 0: ::I 0 0: 0 .. 0

~ 0 0

220 ~(~~)N}2!~~PERATURE ~ :::::p

200

180 I 16"--J.-- 1

I. S " __

140 r-t l' 4"A

120 '/

3 ~l 100

6 2J 20

BASE C~RR~NT ('B) ~ 1 "A

0 V; I I o 0.2 0·4 0.6 0.8 1 12 1.4 16 1.8 2

COLLECTOR-TO-EMITTER VOLTAGE (VeE) - v

92CS-42631

Fig. 6 - Typicaloutput characteristics.

57

Signal Transistors _______________ ,....-____________ _

2N5307, 8, 8A, GES5307, 8, 8A

0:4

~ 0.3

%. -: ;0.2 .. 0 z .. " 0.' '" !:i 0 >

ZtiO TA- 2S°C I 240 'J}-1

2~

....... f-"" ~ ............

'" V- I V E .-g • V • .,y .... I--f--[ z '40 .. V I."~ V a: a: .20 ::> ~ " 100 ...... a: 1 0 .... 80

" 1"" l-I-.. ::l 60

I 0

" 40 aASE CURRENT C'a) ~ 1 pA

20 I I I I I I ° o • 2 3 4 ~ 6 7 8 9 .0

COLLECTOR-TO-EMITTER VOLTAGE (VeE) - v

92CS-42630

Fig. 7-Typical output characteristics.

COLLECTOR-TO-BASE VOLTAGE J .... 2 t--CVca) ~ 20 V z L .. a: '0. a: ::> 6

" 4 ... L ...

0 2 .... / ::>

~ ~K)28 "'_ 6 ~ i 4

/ 0" 1-;"0::. 2 a: V 0 .... '0 • " .. 6 ::l 4/ 0

" 2

-30 ° 30 60 90 AMBIENT TEMPERATURE (T A) - Q C

92CS-42627

Fig. 9 - Typical col/ector-ttHJase cutoff currant characteristic.

COLLECTOR-TO-EMITTER VOLTAGE (YeE) " 5 V AMBIENT TEMPERATURE (T A) " & y

~PT'MU~ SOURCE RES.STANCE CRg), R. ~ ~:

""'~(1"" ~ ".'..~ \,<I>~

............. \t-, j-....., , ~ -+----- e,. (1 kHz)

II (10 kHz) I.C' kHz)! --- -- ----~i - ;:: "'C'O kHz)

O,-i -0.'

NOTE:

4 6 • • COLLECTOR CURRENT Clc) - mA

2 4

~ 3 :c ..

;! .. In 0 z

2 .... z .. a: a: ::>

"

DUETO THE NOISE CHARACTERISTICS OF THIS DEVICE VERSUS FREQUENCY, CALCULATIQN OF NO.SE FIGURE (NF) FROM eii,liiYALUES IS NOT ACCURATE [AS IS THE CASE WITH FIELD-EFFECT TRANSISTORS CFETo)].

92C$-42629

Fig. 11-Equiva/ent input noise-voltage and nolse-cummt characteristics.

58

46824682 10 102


Fig. 8- Typical transfer characteristics.

-30-20~O 0 10 20 30 40 50 60 70 80 90 AMBIENT TEMPERATURE (T A) _ 0 c

92CS-42626

4 6. 10'

Fig. 10- Typical emitter-to-base cutoff current characteristic.


TO-92 Package Lead 1 - Emitter Lead 2- Base Lead 3 - Collector


TO-98 Peckage Lead 1 - Emllter Lead 2 - Collector Lead 3 - Base


2N5365, 2N5366

Silicon Transistors

I TO-98

This GE/RCA series of economy transistors are planar epitaxial passivated PNP silicon devices. These units feature low collector saturation voltage, good current gain linearity over a wide collector current range, high gain-bandwidth


product, and low noise. These characteristics make these units excellent for use in general purpose consumer and industrial amplifier and switching applications. These types are supplied in JEDEC TO-98 package.


COLLEClOR 10 EMITTER VOLTAGE (VeEel ........................................................................... .40 V COLLEC1OR 10 BASE VOLTAGE (VeBol ............................................................................... 4 V EMITTER 10 BASE VOLTAGE (VEBel .................................................................................. 40 V CONTINUOUS COLLEC1OR CURRENT (Ie) ......................................................................... 300 mA COLLEClOR CURRENT (Pulsed) (Ie ............................................................................... 700 mA 10TAL POWER DISSIPATION (T A S 2S·C)·· ........................................................................ 360 mW 10TAL POWER DISSIPATION (TA S SS·C)" ........................................................................ 260 mW OPERATING TEMPERATURE (TJ) .......................................................................... -6Sto + 12S·C S1ORAGETEMPERATURE(TSTG) ......................................................................... -6Sto +IS0·C LEAD TEMPERATURE, 1116" ± 1/32" (I.S8mm ± 0.8mm) from case at lOs max. (T t.l ......................................... + 260°C

• Pulsed conditions: lOllS pulse width, s2%dutycycle .

•• Derate 3.6mWloC increase in ambient temperature above 2SoC.

File Number 2066

_________________________________________________________________ 59

Signal Transistors _____ ----------______________ _

2N5365, 2N5366

ELECTRICAL CHARACTERISTICS. At Ambient Temperature (T A) = 25°C Unless Otherwise Specified


Collector-Emitter Breakdown Voltage (Ic = 10mA) V1BR1CEO

Collector Cutoff Current (VCB = -40V) ICBO (VCB = -40V, TA = 100°C)

Cutoff Current (VEB = - 4V) lEBO DC Forward Current Transfer Ratio

(VCE= -10V,lc= -2mA) (VCE= -10,lc= -50mA) hFE (VCE = - 5V, Ic = - 300mA)

Small-Signal Forward Current Transfer Ratio ("cE.= -10V,~ = -2mA,f= 1kHz) IlnL

Collector-Emitter Saturation Voltage (Ic = - 50mA, IB = - 2.5mA) VCEISAn (lc = - 300mA, IB = - 30mA) VCEISATI

Base-Emitter Voltage (Vc!== -10V,lc= -2mA) VBE

Output CapacHance, Common Base (VEB = -0.5V,IE = 0, f = lMHz) Ccb

Input Capacitance, Common Base (VEB = -0.5V,lc = 0, f = lMHz) Cab

Gain Bandwidth Product (VCE= -10V,lc= -2mA) fT

COLLECTOR·TO-EMITTER VOLTAGE (VcEI- 5V

0: w 140 ... ., z .. 120 0:

TAI~~ l-

'\. 1--Z w 100 w'"

I--""' II.ll~tTURE ITAI '" Zs 'c o:e ~Q 80 '-'" 01- ANle\li~ ........ ~~ ~

60

TI J UJWlc 0: 0 40 ...

~1tfI 0 Q

20

a 1111111 4 68 2 4 68 2 4 68 2 4 68 2

-0.01 -0.1 -1 -10 -100 2 468

-1000

COLLECTOR CURRENT (ici - mA 92CS-42548

Fig. 1-Typical de forward current transfer ratio characteristics for 2N5365.

60

LIMITS

2N5365 2N5366 UNITS

MIN. TYP. MAX. MIN. TYP. MAX

-40 - - -40 - - V

- - -100 - - -100 nA

- - -10 - - -10

- - -10 - - -10 ,..A

32 - - 80 -40 - 120 100 - 300 -20 - - 40 -

32 - 180 80 - 450 -- - -0.25 - - -0.25

- - -1 - - -1 V

-0.5 - -0.8 -0.5 - -0.8

- - 8 - - 8 pF

- - 35 - - 35

- 250 - - 250 - MHz

COLLECTOR·TO·EMITTER VOLTAGE (VcEI - -5 V

0: IIIIII III ' w 350 ... J~I! Idol,

.., z .. 0: 300

-ltlrT I l-I--:i ~ 250 o:e VAM BIENT TEMPERATURE (T I - 25 'C r\ 0:0 ::>- 200 01-

~~ r\~ .. 150 1\ 3:

0: 0 100 ... U T~J.W..~ r--Q

50

111111 II a 2 4 6 8 2 4 8 8 4 8 24 6

-0.01 -0.1 -1 -10 -100 -1000 COLLECTOR CURRENT (ici - mA

Fig. 2 - Typical de forward-current transfer ratio characteristics for 2N5366. .


1.5

.... ,/'" ....-

Z

V w

'" 1 '" /' ::>-U W o.g c~ 0.8 "'- / "0 ;:- 0.7

~: 0.6 / """, V UW c"" 0.5 c m / w Z N" -'" 0.4 ;i .... :;

'" 0 Z 0.3 ~ COLLECTOR·TO·EMITTER VOLTAGE (VCE) = -5 V

0.25 COLLECTOR CURRENT (lC) = -50 mA

75 -50 25 0 25 50 75 100 125 150 AMSIENT TEMPERATURE (TA) - 'c

82CS-425S0

Fig. 3 - Normalized dc forward-current transfer ratio characteristics for both types.

IClls 10 Z 0 -10 ;:: 8 .. • '" 4 ::» !CI 2 m" ",-w· -1 ~~ 8

i~ • (TA) 55 'C

~~ 4

~ 2 ~~ "' .... ~g -0.1a

(TA) = 10 O'C

(TA) = 100'C w 8 ===trt(TA):':' 25'C :l 4 0

~ 1111 AMBIENT TEMPERATURE (TA) U 2 (TA) - 55'17,1 II 11111 II 11111 -0.01

468 46B 468 -,01 -1 -10 -100


25'C

II 1111 4 68

-1000

Fig. 5 - Typical collector-to-emitter saturation voltage characteristics for2N5366.

> I iii .. ~ w CI

~ 0 >

'" w ~ :iii w 6 ':" w m .. ..

COLLECTOR·TO·EMITTER VOLTAGE (VCE) - -5 V

-1.1

-1

-o.g

-0.8 --0.7

-0.6

-0.5

/' -0.4

0

-0.1

k-"i/

twf-1-1 !>' V I"'" J.t~~~~ ~I'EI\"

,,~9\Etl1:~ W .//

2

~

4 .8 -1

4 68 -10

TA-1

I

2 4 6 B -100

COLLECTOR CURRENT (I C) - mA

4 .8 -1000

Fig. 7-Typical base-to-emitter voltage characteristics for 2N5365.

2N5365, 2N5366

ICIIS 10

Z -10 0 8 ;:: 6 .. '" 4 ::» !CI m"

2

"'- -1 w· .... w 8 .... U • i2- 4 Ww

*~ 2

"' .... TA ~g-O.18 w 6 TA :l 4 0 U 2

-0.01

100°C

55 '0 AMTS:E'~I~rrEMIPE'RAlilr~RE (TA) = 25'C IITA=25'C 1111111 I 11IIII ·r II11111

IIII~ ~ 10QoC

II 11111 II 11111 I 11111 ! 111111 2 4 68 2 4 68 2 4 68

-0.1 -1 -10 -100 4 68

-1000

COLLECTOR CURRENT (IC)-mA 92CS-42551

Fig. 4 - Typical collector-to-emitter saturation voltage characteristics for2N5365.

-1.2 IC/IS -10

Z -1.1 0 ;::

i.'" ili> -1 ::>' '/y .... " .. -UJ fl. -0.9

- 'C ,/ "' .. w> / ~;;; -0.8

TA=-55'C ~~!>

-CI Hi111m ~ :; .. ~I'EI\"1:f w .... OS -0.7

p.~~\Etl1: 1:~ llikt ':"> w ~ -0.6 .. I"'"

V Tillil 10n -0.5

~ 11111 I -0.4 468 468 468

-0.1 -1 -10 -100


4 .8 -1000

92CS'42553

Fig. 6 - Typical base-ta-emitter saturation voltage characteristics for both types.

-1.1 COLLECTOR-TO-EMITTER VOLTAGE (VCE) - -5 V

> , -1 iii ..

.,// > ;-0.9 CI TA = -55,:s. ,/ .. ~ -0.8 g /f- Y ffi -0.7

~ L -:iii -0.6

,6A~1100'c ~ w 6 I-;- -0.5 w

JdfffttfMB/En rllmp{RIATluIRI' I(~f) = 1251 'FI ~ ED -0.4

/ 1111111 1111111 1111111 II 2 6 2 4 68 2 4 68

-0.1 8 -1 -10 -100

4 .8 -1000

COLLECTOR CURRENT (IC)- mA

Fig. 8-Typical base-to-emitter voltage characteristics for 2N5366.

61

Signal Trans/stors ___________________________ _

2N5365, 2N5366

-36 AMBIENT TEMPERATURE (T A) = 25 "C

-32 / ---1;1 A / C I-- rl30'/ ~ -28 I-- -/ ~~tp/ /

"0 ./ /~'1f3 ::'-24

!i: ./ /' V /')7",0/ / ~ -20 /' -'" /' '21 08 a: ,Z / B~!~ =C:~!NT _ ::> ", ... ,~ U -16 a: I..--"" V ~oO/ I 0 ..... .- , t; -12

- - /'1f3 w .... .....- .- 1_ .... -8 //'0<0 0 -r-u

/0 4 ,'I'

0 0 o 20 40 60 80 100

COLLECTOR·TO·EMITTER VOLTAGE (VCE)-V

Fig. 9 - Typical collector current characteristics for 2N5365.

25 a 25 50 75 100 125 150 175200 225 250

AMBIENT TEMPERATURE (TA)-"C HCS-42558

Fig. 11 - Typical collector-to-base cutoff current characteristics for both types.

a: w I: iii w

~ a: 0 I-U w .... .... 0 u

-16

-12

-8

-4

0

GAIN-BANDWIDTH PROOUCT (fT)

~4-~~*-~HH+m~~~Hffi-4+-+i ~-r~~~~~~+H~~~~~~+t-rrH~ ~-r~~; f.,~n-I\..,"""~;l+.o!C_Of.,"~IH-~9.H~ ~ ~

~-r++H~f.,-~~+H~~-Hf.,H~--+-~~

1\ \

I\, 468 24 8 2 68 4 ••

-0.01 -0.1 -1 -10 -100


Fig. 13 - Typical gain-bandwidth product characteristics for 2N5365.

62

-36 AMBIENT TEMPERATURE (TA) = 25"C

-32 / C / If -28 L

I--~o / / "0 I--,~ / 1/ J ::. -24 I- ~~~n. / Z w -20 7'Y~/' a: / a: V /'~ ::>

B~:~ =C_~~~!NT _ u -16 ././ ,118 I--a: -"' . .tV ~ ./ .- ;;--~I -12 ,;: u - .- J w ~ .... - -.... -8 0 - -u ...- ----;;; -4 r-

0 0 o 20 40 60 80 100

COLLECTOR·TO·EMITTER VOLTAGE (VCE) -V

IllCS·U!S7

Fig. 10- Typical collector current characteristics for 2N5366.

32

'0 28 ... u

U - 24 1- .. ::> .. ~I 20"'" ::>w °u QZ ZC CI-

16

o~ i~ 12 ~u I-::> 0.

8

! 4

0

-0.1

...... I'.....

" 2 4 • B 2

-1 •

C. O

'-

• B -10

COLLECTOR-TO·BASE VOLTAGE (VCB) - V EMITTER·TO·BASE VOLTAGE (VEB) - V

Ccbo

4 •• -100

I2CS..Q5st

Fig. 12 - Typical input and output capacitance characteristics for both types.

> GAIN·BANOWIDTH PRODUCT (fT)

~ -26 w III I 11111111 I u

I I 111111 I ; -24 N :I:

oooolig " :IE o 0 Ii: 8 Ii: _~ ~ ~ '" 0 -20

N C')'ltll) _ _ N

N '" r-g II

a: ./: I w -16

t :IE -12 w

~ a: -8 ~ \ u \ w -4 .... "-.... 0 U-O.01

2 4 • B 2 4 B 2 4 • B 2 4 • B -0.01 -0.1 -1 -10 -100


Fig. 14 - Typical gain-bandwidth product characteristics for 2N5366.


2N5365, 2N5366

• 4

2 468 2 46B 2 468 2 468 2 468 -0.001 -0.01 -0.1 -1 -10 -100

COLLECTOR CURRENT ('cl - rnA

100

~ ,O~ =-w •

" ." I'\: ~ z I~~ ; ~ -0 ~ 1\ :'\' en 1 w a: w

~ " a: "- ) ::l 00.1 en

1° i ~I It.:: p.; 0.01

I. 2 -0.001 -0.01 -0.1 -1 -10 -100

COLLECTOR CURRENT ('cl - rnA

Fig. 15 - Typical noise figure characteristics for 2N5365. Fig. 16- Typical noise figure characteristics for 2N5366.



63


GES2218A, 19A, GES2218, 19

Silicon Transistors

I TO-92

The GE/RCA GES2218, A, 19, A series are planar epitaxial NPN silicon transistors designed for medium speed switches


and as amplifiers from audio to VHF frequencies. These types are supplied in JEDEC 10-92 package.

GES2218 GES2218A GES2219 GES2219A

COLLECTOR TO EMITTER VOLTAGE (VcEol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 40 V EMITTER TO BASE VOLTAGE (VEBol. ....................................................... 5 6 V COLLECTOR TO BASE VOLTAGE (VcBol. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 75 V CONTINUOUS COLLECTOR CURRENT (IC>. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BOO BOO mA TOTAL POWER DISSIPATION T C S 25°C (PT). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.B W TOTAL POWER DISSIPATION TA s 25°C (PT). ................................................ O.B 0.5 W DERATE FACTOR, T C > 25°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 12 mW/oC DERATE FACTOR, TA > 25°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.33 3.33 mW/oC OPERATING TEMPERATURE (TJ) .......................................................... -65°10 +200 °C STORAGE TEMPERATURE (T STGl· . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 65° to + 200 °C LEAD TEMPERATURE 1/16" ± 1/32"(1.5Bmm±0.Bmm) from case al lOs max. (TL) .................... +260 °C

File Number 2067 64 ________________________________________________________________ _


GES2218A, 19A, GES2218, 19


CHARACTERISTICS SYMBOL GES2218 GES2219

MIN. MAX.

Coliector·Emltter Breakdown Voltage (Ic = 10mA,IB = 0) BVECO 30 -

Coliector·Base Breakdown Voltage (lr. = 10)'A, IF = 0) BVr.Ro 60 -

Emitter·Base Breakdown Voltage (IE = lO~A,lc = 0) BVEBO 5 -Collector Cutoff Curernt

(VeB = 50V,IE = 0) - 0.01

(Vr.B = 60V, IE = 0) ICBO - -

EmitterCutoffCurrenl{VEB = 3V,Ic = 0) lEBO - -Collector-Emitter Saturation Voltage

(I~ = 150mA, Ie = 15mA) VBE(SAT) - 0.4

(Ic = 500mA, IB = 50mA) - 1.6

Base-Emitter Saturation Voltage (Ic = 150mA, IB = 15mA) VBE(SAT) 0.6 2

(lr. = 500mA, Ie = SOmA) - 2.6

GES2218 GES2218A

DC Forward Current Transler Ratio (Ic = O.lmA, VCE = 10V) 20 -(lr. = lmA, Vr.E = 10V) 25 -(Ic = 10mA, VCE = 10V)

hFE 35 -(Ic = 150mA, Vr.F = IV) 20 -(lc = 500mA, VCE = 10V) 20 -

Gain Bandwidth Product (Ic = 20mA, VCE = 20V, 1= 100MHz) IT 250 -

"IT lor2219A = 300(min).


Lead 1 - Emitter Lead 2 - Base Lead 3 - Col/ector

LIMITS

GES2218A GES2219A UNITS

MIN. MAX

40 -

75 - V

6 -- -

)'A - 0.01

- 10 nA

- 0.3

- 1 V

0.6 1.2

- 2

GES2219 GES2219A

35

50 -75 - -50 -40 -

250" - MHz

65


GES2221, GES2222, MPS2222, PN2222

Silicon Transistors Features: I • Performance comparable to hermetic units • High Gain • Low VCE(SAT) • High Frequency • Medium Voltage

TO-92

The GE/RCA GES2221, GES2222, MPS 2222 and PN2222 are planar passivated epitaxial NPN silicon devices specifically developed for high speed switching, amplifier and core


driver applications. The PN, MPS, and GES prefixes can be used interchangeably, characteristics for each line are similar. These types are supplied in JEDEC TO-92 package.

GES2222 MPS2222

GES2221 PN2222 COLLEClORlOEMITTERVOLTAGE(VCEol ................................................. 30 30 V COLLEClOR lO EMITTER VOLTAGE (VCES>' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 40 V EMITTERlOBASEVOLTAGE(VEBol........................................................ 5 5 V COLLEClOR lO BASE VOLTAGE (V ceo>. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 60 V CONTINUOUS COLLEClOR CURRENT (Ic) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 400 mA COLLEClOR CURRENT (pulsed)" (Ic). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BOO 800 mA lOTAL POWER DISSIPATION T C S 25·C (PT). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 W lOTAL POWER DISSIPATION TA S 25·C (PT)' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.36 0.36 W DERATE FAClOR, Tc > 25°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 10 mW/·C DERATE FAClOR, T A > 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6 3.6 mW'oC OPERATING TEMPERATURE (T J) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 65 to + 125 ·C SlORAGE TEMPERATURE (T STG)' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 65 to + 200 °C LEAD TEMPERATURE 1/16" ± 1/32" (1.5Bmm ± O.Bmm) from case at lOs max. (T J .. . . . . . . . . . . . . . . . . . + 280 ·C

"Pulsed condttions: 10,..s pulse width, S2% duty cycle.

File Number 2068

~ -----------------------------------------------------------------


GES2221, GES2222, MPS2222, PN2222

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (T A) = 25°C Unless Otherwisa Specified

CHARACTERISTICS SYMBOL GES2221

MIN.

Collector-Emitter Breakdown Voltage (lc = 10mA, IB = 0)" VIBRICEO 30

Emitter·Base Breakdown Voltage (IF = 1 O~A, Ie = 0) V'BRIEBO 5

Coliector·Base Breakdown Voltage (Ic = 10~, IE = 0) V1BRICBO 60

Coliector·Emitter Breakdown Voltage (I~ = 10~, VBE = 0) V1BRICES 40

Collector-Emitter Saturation Voltage (Ic = 150mA, IB = 15mA)" VCE(SAT) -(Ic = 500mA, IB = 50mA)" -

Base·Emltter Saturation Voltage (Ie = 150mA, IB = 15mA)" VBE(SAT) -(Ic = 500mA, IB = 50mA)" -

DC Forward Current Transler Ratio (VCE = 1V,lc = 150mA)" 20

(VCE = 10V,lc = 0.1mA) 20

(VCE = 10V,lc = 1.0mA) hFE 25

(VCF = 10V, Ie = 10mA)" 35

(VCE = 10V, Ic = 150mA) 40

(V CE = 10V, Ic = 500mA)" 20

Collector Cutoff Current (VCB = 50V, IE = 0)" ICBO -

(VCB = 50V, IE = 0, TA = 100·C)" -Emitter-Base Reverse Current

(VEB = 3V,lc = 0) lEBO -Gain Bandwidth Product

(VCI" = 20V, Ic = 20mA, 1= 100MHz) IT 250

Collector-Base Capacitance (VCB = 10V,IE = 0,1 = 1MHz) COb -

Emitter·Base Capacitance (VEB = 0.5V, Ic = 0, 1= 1MHz) Ceb -

"Pulse conditions: S 300~spulsewidth, S 2% duty cycle.



MAX.

----

0.3

1.2

1.1

2.4

----

120

-

10

10

50

-

8

25

LIMITS

GES2222, MPS2222, PN2222

MIN. MAX

30 -5 -

60 -

40 -

- 0.3

- 1.2

- 1.1

- 2.4

50 -35 -50 -75 -100 300

30 -

- 10

- 10

- 50

250 -- 8

- 25

UNITS

V

-

nA

~A

nA

MHz

pF

67

D


GES2906, 6A, 7, 7 A, MPS2906, 6A, 7, 7 A, GES2221A, 22A, MPS2222A, PN2222A

Silicon Transistors Features: • Low leakage currents • High speed switching I • Epoxy encapsulation with proved re/iablity-excellent characteristic stability under

environmental stresses, 85°C @ 85% RH • Low collector saturation voltages

TO-92

The GE/RCA GES2221A, 22A, MPS2222A, PN2222A NPN types, and GES290S, OSA, 07, 07A, MPS290S, OSA, 07, and 07A PNP types are planar epitaxial passivated silicon transistors intended for general purpose amplifiers, saturated

switching, and core applications. The GES, MPS and PN prefixes can be used interchangeably, characteristics for each line are similar. PNP values are negative; observe proper polarity. These types are supplied in JEDEC TO-92 package.


2221A 2906,06A 2222A 2907,07A

COLLECTOR TO EMITTER VOLTAGE (VcEel .............. , .. , .. " .. " ..... , .. ,.,."'." .. ,." 40 -40 V EMITTER TO BASE VOLTAGE (VESel ......... " ... " ....................................... . 5 -5 V COLLECTOR TO BASE VOLTAGE (Vcsel .................................................... . 75 -60 V CONTINUOUS COLLECTOR CURRENT (Icl ................................................. . 400 -350 mA COLLECTOR CURRENT (peak)(lcl .. , ..................................................... . 800 -700 mA TOTAL POWER DISSIPIU"ION T A :S 25·C (PT) ................................................ . 380 360 mW TOTAL POWER DISSIPATION T c :S 25·C (PT) ................................................ . 1000 1000 mW DERATE FACTOR, T A > 25·C ............................................................ . 3.6 3.6 mW/·C DERATE FACTOR, T c > 25·C ............................................................ . 10 7 mW/·C OPERATING TEMPERATURE (T J) ......................................................... . STORAGE TEMPERATURE (T STG> ......................................................... . LEADTEMPERATURElh6" ± If.32''(l.58mm ± 0.Smm)fromcaseall0smax.(TLl ............... · .. .

-6510 + 150 ·C -6510 + 125 ·C

+260 ·C

File Number 2070

68


GES2906, 6A, 7, 7A, MPS2906, 6A, 7, 7A, GES2221A,22A, MPS2222A, PN2222A


LIMITS CHARACTERISTICS SYMBOL 2221A,22A 2906,06A 2907,07A UNITS

MIN. MAX. MIN. MAX MIN. MAX. Collector-Emitter Breakdown Voltage

(Ie = 10mA.IB = 0)' V1BRlEeo 40 - -40 - -40 -Collector-Base Breakdown Voltage

(Ie = 101lA. IE = 0) V1BRleBO 75 - -so - -so - V

Emitter-Base Breakdown Voltage (IE = I O~A. Ie = 0) VIBRIEBO 5 - -5 - -5 -Collector-Cutoff Current

(VeB = SOV.le = 0)' ICBO - 10 - -20 - -50 nA

(VCB = SOV, IE = O. T = 1000 cr - 10 - -20 - -20 ~A

Collector-Emiller Saturation Voltage (Ie = 150mA.IB = 15mA)' VCE(SAT) - 0.3 - -0.4 - -0.4

(Ie = SOOmA.1s = SOmA) - I - -1.S - -I.S

Base-Emitter Saturation Voltage V (Ie = ISOmA.IB = ISmA)' VeE(SAT) - 1.1 - -1.3 - -1.3

(Ie = SOOmA, IB = SOmAl' - 2 - -2.S - -2.S

2221A 2222A 2906,06A 2907,07A

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. UNITS

DC Forward Current Transler Ratio (VCF = 1.0V.le = ISOmAr 20 - 50 - - - - -(Vee = 10V, Ie = O.lmA) 20 - 35 - 20 - 35 -(VCE = 10V.le = 1.0mA) hFE 25' - '50 - 25 - 50 -(VeE = 10V, Ic = 10mA) 35 - 75 - 35 - 75 - -(VCE = 10V, Ic = ISOmA)' 40 120 100 300 40 120 100 300

(VCE = 10V, Ic = SOOmA)' 20 - 30 - 20 - 30 -Collector Capacitance

(VCB = 10V, IE = O. 1= lMHz) Ccb - 8 - 8 - 8 - 8 pF Emitter-Base Capacitance

(VEB = O.SV. Ie = 0, I = I MHz) Ceb - 25 - 25 - 30 - 30

Delay Time (Ies= ISOmA,IBl = ISmA) td - - - - - 10 - 10

Rise Time (ICS = 150mA.IBl = 15mA) Ir - - - - - 40 - 40

Storage Time (Ies = ISOmA.IB1 = IB2 = ISmA) ts - - - - - 80 - 80 ns

Fall Time (Ies = ISOmA, IBI = ISmA) tf - - - - - 30 - 30

Turn-On Time (~= I SOmA. Vce = 30V,IBI = ISmA) - 35 - 35 - - - -Turn-OffTime(lc = I SOmA, Vec = 30V, tON

IBI = IB2 = ISmA) - 285 - 285 - - - -

'Pulse conditions: 300~s pulse width, 2% duty cycle.

69


GES2906, 6A, 7, 7A, MPS2906, 6A, 7, 7A, GES2221A, 22A, MPS2222A, PN2222A

INPUT Zo= so.n PRF = 150 PPS RISE TIME .:S 2ns

~~ J L200n.

-30

92C9-42494

TO OSCILLOSCOPE RISE TIME .:S 5ns ZIN = 10 M.n

INPUT Zo = SO.n PRF = 150 PPS RISE TIME .:S 2ns

-~ J L200ns

1SV -6

TO OSCILLOSCOPE RISE TIME :S 5ns ZIN = 10 M.n

92CS-42495

Fig. 1 - Delay tima and rise time test circuit for pnp types (2906, 06A, 07,07A).

Fig. 2 - Storage time and fall time test circuit for pnp types (2906, 06A, 07,07A).

VIN +16V

tr < 2 flS PW!i 200)ls

DUTY CYCLE ~ 2 %

1K.n

so.n 200.n

+30V

TO OSCILLOSCOPE ZIN > 100 K.n CIN:S 1.4 pF

RISE TIME :S 5 nS

92C9-42496

VIN -30V

PW ~ 1 us tr & tf.:S 7 us

1K.n

So.n

-3V +16V

1 1

200.n SW

20K

SO.n

TO OSCILLOSCOPE ZIN < 100K.n CIN~12pF

RISE TIME ~ 5 nS

Fig. 3 - Turn-on time test circuitfor npn types (2221 A and 2222A). 92C9-42497

70

Fig. 4 - Turn-off time test circuit for npn types (2221 A and 2222A).


Lead 1 - Emitter Lead2-Base Lead 3 - Collector


GES2904, 04A, GES2905, 05A

Silicon Transistors

I TO-92

The GE/RCA GES2904, 4A, 5, 5A, are planar epitaxial PNP cuits. These types are supplied in JEDEC TO-92 package. silicon transistors designed for high-speed switching cir·


GES2904 GES2904A GES2905 GES2905A

COLLECTOR TO EMITTER VOLTAGE (V CEel. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 60 V COLLECTOR TO BASE VOLTAGE (VEBel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 V COLLECTOR TO BASE VOLTAGE (VCBel. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 60 V CONTINUOUS COLLEClOR CURRENT (Icl . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 600 mA lOTAL POWER DISSIPATION T C :S 25·C (PT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000 mW lOTAL POWER DISSIPATION T A :S 25·C (PT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW DERATE FAClOR, Tc ~ 25·C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 mW/·C DERATE FAClOR, TA ~ 2S·C. . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . 3.43 mW/·C OPERATING TEMPERATURE (TJ). ........................................................... -6510 +135 ·C SlORAGE TEMPERATURE (T STG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 6510 + 150 ·C LEAD TEMPERATURE 1/16" ± 1132" (1.58mm ± 0.8mm) from case al1 Os max. (T U .. . . . . . . . . . . . . . . . . . . . + 260 ·C

File Number 2069

71


GES2904, 04A, GES2905, 05A


LIMITS

CHARACTERISTICS SYMBOL GES2904 GES290S

MIN. MAX.

Collector·Emitter Breakdown Voltage (Ic = 10mA,Ie = 0) BVECO 40 -

ColiectorCutofiCurrent(VCB = 50V,IE = 0) ICBO - 0.02

Base Cutoff Current (VCE = 30V. VeE = 0.5V) Ie - 50

Collector Saturation Voltage ~ = 150mA,IR = 15mA)· VCE(SAT) - 0.4

(Ic = 500mA,IB = 50mA)· - 1.6

Base Emitter Saturation Voltage (Ic = 150mA,Ie = 15mA)· VCE(SAT) - 1.3

(Ic = 500mA,IB = 50mA)· - 2.6

SYMBOL GES2904 GES2904A

MIN. MAX. MIN. MAX.

Small·Signal Forward Current Transfer Ratio (Ic = 0.1mA, VCE = 10V) 20 - 40 -(lc = 1mA, VCE = 10V) hie 25 - 40 -(Ic = 10mA, VCI" = 10V) 35 - 40 -(Ic = 150mA, VCE = 10V) 40 120 40 120

Gain Bandwidth Product fT (Ic = SOV, VCE = 20V, f = 100MHz) 200 - 200 -

·PulsedcondHion::s 300"spulsewidth,:S 2% duty cycle.


72


GES2904A GES290SA

MIN. MAX

60 -- 0.01

- 50

- 0.4

- 1.6

- 1.3

- 2.6

GES2905 GES290SA

MIN. MAX. MIN. MAX.

35 - 75 -50 - 100 -75 - 100 -100 300 100 300

- - - -

UNITS

V

tJA

nA

V

UNITS

-

MHz


GES5401, GES5551

Silicon Transistors

I 10-92

The GE/RCA GES5401 is a PNP and GES5551 is a NPN; they are complimentary silicon transistors designed for use in general-purpose, high amplifier applications. PNP values

are negative; observe proper polarity.



GES5401 GES5551 COLLECTOR TO EMITTER VOLTAGE (V CEO)lf EMITTER TO BASE VOLTAGE (VEBel ..... . . . . .............. .

-150 160 -5 5

COLLECTOR TO BASE VOLTAGE (VCBO) ........................... . -160 180 CONTINUOUS COLLECTOR CURRENT (Ic) ........................... . -600 600 TOTAL POWER DISSIPATION (T A:S 25°C)(PT) .......................... . . .. 350 TOTAL POWER DISSIPATION (T c:S 25°C)(PT) ........... . 1 DERATE FACTOR (T A> 25°C) ............................................... . . .... 2.8 DERATE FACTOR (Tc> 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . .......... . 8 .. '

OPERATING TEMPERATURE(TJ)'" .... ........... .. ........ . ............ . -55°to +150 STORAGE TEMPERATURE (T STGl ............................................ . .... -55°to +150 LEAD TEMPERATURE, 1/16" ± 1132" (1.58mm ± 0.8mm) from,case for lOs max (T U .. . ... -260 ...


LIMITS

CHARACTERISTICS SYMBOL GES5401 GES5551

MIN. MAX MIN. MAX

Collector-Emitter Breakdown Voltage (1 C = 1 rnA, IB = 0) VIBRIECO -150 - 160 -Collector-Base Breakdown Voltage (Ie = 1 00 ~A, IE = 0) V(BR)CeO -160 - 180 -Emiter-Base Breakdown Voltage (IE = lO~A, Ic = 0) VieR Eeo -5 - 5 -Collector-Cutoff Current

(VCB = -100V, IE = 0) leBO - 50 - -(Vee = 120V, IE = 0 - - - 50

Emitter Cutoff Current (lEB = 4V, Ie = 0) IEeo - 50 - 50

Collector-Emitter Saturation Voltage

(Ic = 10mA,le = 1 rnA) VC8sat) - 0.2 - 0.15

(Ie = 50mA, Ie = 5 rnA) - 0.5 - 0.2

Base-Emiller Saturation Voltage

(Ie = 10mA,le = 1 rnA) VB8sat) - 1 - 1

(Ie = 50mA, Ie = 5 rnA) - 1 - 1

V V V

rnA mW W

mW/oC mW/oC

°C °C °C

V

nA

V

File Number 2094

73


GES5401, GES5551

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (TAl = 25°C Unless Otherwise Specified (Cont'd)

CHARACTERISTICS


(VeE = 5V, Ic = 1 mA

(VCE = 5V,lc = 10 mA

(VeE = 5V,lc = SOmA

Gain·Bandwidth Product (Ie = 20 rnA, VCE = 20 V, F = 20 MHZ)

74


Lead 1 - Emitter Lead2-Base Lead 3 - Collector

SYMBOL

hFE

Fr

LIMITS

GESS401 GESSSS1

MIN. MAX MIN. MAX

50 - 80 -60 240 80 250

50 - 30 -50 - 50 -

-

MHZ


GES5810, GES5811, GES5812, GES5813

Silicon Transistors

I Features: • Excellent gain linearity over wide range of collector current: S 500 mA • High collector current rating: 1000 mA (pulsed) • Epoxy encapsulation with proved reliability:

excellent characteristic stability under environmental stresses, 85°C - 85%RH

TO·92

The GE/RCA GES5810, GES5812 NPN types and GES5811 and GES5813 PNP types are planar, passivated, epitaxial silicon transistors intended for wide range general purpose

applications operating in audio and intermediat frequency ranges. PNP values are negative; observe proper polarity.



GES5810 GES5812

GES5811 GES5813

COLLECTOR TO EMITTER VOLTAGE (VeEO) . . . . . . . . . . . . . . . . . . . 25 - 25 COLLECTOR TO EMITTER VOLTAGE (VeEsl. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 - 35 EMITTER TO BASE VOLTAGE (VEBci. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 - 5 COLLECTOR TO BASE VOLTAGE (VcBci. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 - 35 CONTINUOUS COLLECTOR CURRENT (Ie). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 - 750 COLLECTOR CURRENT (Pulsed)' (leM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1000 - 1000 TOTAL POWER DISSIPATION T A:S 25·C (PT). . . . . . . . . . . . . . . . . ...... 1500 .. DERATE FACTOR T A ~ 25°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... 4.55 .... OPERATING TEMPERATURE (T J) .................................. . . .... -65to +135. STORAGE TEMPERATURE (T STG) ......................................... . -65to +150 .. LEAD TEMPERATURE, 1116" ± 1132" (1.58mm ±0.8mm) Irom case for lOs max. (T J. . . . .. . ................... + 260 • Pulsed conditions: 300 ~s pulse width, :S 2% duty cycle.

V V V V

rnA rnA mW

mW/·C °C ·C ·C

File Number 2095

_______________________________________________________ 75

Signal Transistors _____________________________ _

GES5810, GES5811, GES5812, GES5813

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (T A) = 2S·C Unless Otherwise Specified

CHARACTERISTICS

Collector·Emitter Breakdown Voltage

(Ic = 10mA,Ie = 0)"

Emiter·Base Breakdown Voltage (IE = 1 O~A, Ic = 0)

Collector·Emitter Breakdown Voltage

(Ic = 10~A, VeE = 0)

Coliector·Emitter Saturation Voltage

(Ic = 500mA,le = SOmA)"

Base-Emitter Saturation Voltage

(Ic = SOOmA, Ie = SOmA)"

Base-Emitter Voltage

(lc = 500mA, VCE = 2V)"

Collector-Cutoff Current

(VCR = -25V,IE = 0)

(Vcs = 25V, IE = 0, TA = 100·C)

Emitter-Base Reverse Current

(VEB = 5V, Ic = 0)


(VCE = 2V,Ic = 2mA)

(VCE = 2V,Ic = 500mA)"

Emitter-Base Input Capacitance

(VES = 0.5V, I = 0, I = 1 MHz)

Collector-Base Output Capacitance

(Vcs = 10V,IE =), f = lMHz Gain·Bandwidth Product

(VCF = 2V,Ic = 50mA, F '" 20 MHz)

"Pulsed conditions: 300~s pulse width, :s; 2% duty cycle.

1000

900

~ 800

I 700 ;p ; 600 0 ~ 500 .. f'. ~ 400 E I\. 0: 300 w t\. ~ 200

!\.. 100

0 I\. o 25 50 75 100 135 175200225250275 300

OPERATING AMBIENT TEMPERATURE (TA) -'C

92CS-42'24

Fig. 1-Derating curve for all types.

76

LIMITS

SYMBOL GES58l0, GESS8l2 GES58ll, GES5813 UNITS

MIN. MAX MIN. MAX

VIBRICEO 25 - -25 -

V BR EBO 5 - -5 -

V(BRICES 35 - -35 -

VCE(SATl - 0.75 - -0.75 V

VBEISATI - 1.2 - -1.2

VBE 0.6 1.1 -0.6 -1.1

Icso - 100 - -100 nA

- 15 - -15

IESO - 10 - -10 ~A

(GES5810, GES58l1) (GESS812, GESS813)

hFE 60 200 150 500 -45 - 60 -

Ceb - 55 - 55 pF

Ccb - 15 - 15

(GESS810, GES5811) (GES58l2, GES58l3)

IT 1001 - 1351 - MHz

400 rI rILIIi~rR-TO-EMITTER VOLTAGE (VCE) = 2 V

0: w 350 .. GES5810-UI Z GES5811--.. 300 II: I .... \ ~w 250 w" 12~ ,h \ I 0:"-

~Q 200 <>!( ~sl:c - :l:Ii '" Co: I' a: 150

i 25,b ~ ~ 1--- p-o 100

i>.MBIENT TEMP~~ATURE (TA~:~ 25'<:· ..

V <> C 50

1m HIUlll JJ llli 4 • 2 4 • 8 2 4 .8

0.1 2 4 88

1 8 10 100 1000

COLLECTOR CURRENT IIcl - mA

Fig. 2-Typical de forward-current transfer ratio characteristics for GES5810andGES5811.

Signal Transistors

GES5810, GES5811, GES5812, GES5813

800 H iOILllilirR-TO-EMITTER VOLTAGE (VCE) = 0 V

" w 700 IL

g~~~~g= ., Z C 600 0:

lo~·b V 1\ l-I--Z ~ 500 W.c rIl ,,- -~~ 400

~~ 10n .... ~\ i 300 r-05 ·C 1-- t-, \

0 200 IL V ~~I~I:ENT TEM~~I~lfTURE (Ttl ~1~5·~ \ g

100

IIIII IIIIIII IIIIIII a

100 6 F= F= COLLECTOR-TO·BASE VOLTAGE (VCB) 25 V 4

IL 2 IL

° 10 I-C B :>0 • UI 4

~'O 2 ;jill /;V 6~ 1 B

~~ • ~q Ow 4

Q

1-0: uo: 2 w::> ~/7 go 0.1 8

U B 4

2

~ 0.01 468 468 468

0.1 1 10 100 4 • B

1000 -20 a 20 40 60 60 100 120 140 160 160200

AMBIENT TEMPERATURE (TA) _·C 92CS~42537


Fig. 3 - Typical de forward current transfer ratio characteristics for GES5812 and GES5813.

Fig. 4 - Typical collector·to-base cutoff current characteristics for all types.


Lead 1 - Emitter Lead 2· Base Lead 3 • Collector

77

D


GES5814, GES5815, GES5816 GES5817, GES5818, GES5819

Silicon Transistors Features: • Excellent gain linearity over wide range of collector current: ~ 500 mA • High collector current rating: 1000 mA (pulsed) • Epoxy encapsulation with proved reliability: I excellent characteristics stability under environmental stresses, 85°C - 85#RH

TO-92

The GE/RCA GES5814, GES5816, and GES5818 NPN types and GES5815, GES5817, and GES5819 PNP types are planar, passivated, epitaxial silicon transistors intended for wide range general purpose applications operating in audio

and intermediat frequency ranges. PNP values are negative; observe proper polarity.



COLLECTOR TO EMITTER VOLTAGE {V CEol .......................................... . COLLECTOR TO EMITTER VOLTAGE {VcEsl ........................................... . EMITTER TO BASE VOLTAGE (VEBO) ................................................ . COLLECTOR TO BASE VOLTAGE {V csol ............................................. . CONTINUOUS COLLECTOR CURRENT (Ie) ..................•................. COLLECTOR CURRENT (Pulsed)' (lCM) .............................................. . TOTAL POWER DISSIPATION T A~ 25·C (Pr) .......................................... . DERATE FACTOR, T A> 2S·C ....................................................... . OPERATING TEMPERATURE (T J) ................................................... . STORAGE TEMPERATURE {T STGl .................................................. . LEAD TEMPERATURE, 1/16" ± 1t.l2"{1.58mm ± 0.8mm) from case for lOs max {TJ ............ .


Lead 1 • Emitter Lead 2· Base Lead 3 • Collector

GES5814 GES5815 GES5816 GESS8l7 GESS8l8 GESS8l9

40 -40 V 50 -50 V 5 -S V

50 -50 V 7S0 -750 mA 1000 -1000 mA

. ....... 500 mW . ....... 4.55 mW/·C . ... -65·to +135 .... ·C . ... - 65° to + 150 .... ·C . ....... +260 ........ ·C

File Number 2096

78 _______________________________________________________________ _





Collector-Emitter Breakdown Voltage

(Ic = 10mA, IB = 0) V(BR)CEO Emiter-Base Breakdown Voltage (IE = 1 O~A, Ic = 0) V BR EBO Collector-Emitter Breakdown Voltage

(Ie: = 10~A, VBE = 0) V BR CES Collector-Emitter Saturation Voltage

(!~ = SOOmA, IB = 50mA)" VCE SAT} Base-Emitter Saturation Voltage

(IC = 500mA, IB = 50mA)" VeEISAT) Base-Emitter Voltage

(Ic = 500mA, VCE = 2V)" VBE Collector-Cutoff Current

(VCB= -25V,IE =O) ICBO (Vce = 25V,IE = 0, TA = l00·C)

Emitter-Base Reverse Current

(VEe = 5V, Ic = 0) lEBO DC Forward Current Transfer Ratio

(VCE = 2V.lc = 2mA)

GES5814, GESS815

GESS816,GESS817

GES5818. GES5819 hFE (VCE = 2V, Ic = SOOmA)

GES5814, GESS815

GESSd16,GES5817

GES5818, GES5819

Emitter-Base Input Capacitance

(VEe = 0.5V, I = 0, I = 1 MHz) CBb Collector-Base Output Capacitance

(Vce = 10V,IE = 0, 1= lMHz CCb Gain-Bandwidth Product

(VCE = 2V,Ic = 50mA, F = 20 MHz)

GES5814, GESS815 IT GESS816, GESS817

GESS818, GES5819

1000

900

~ 800

I 700 ;p 2' 600 0

~ 500

'\. .. 2j 400 Q ~ a: 300 w '\. ;=

200 0 .. r\. 100

0 " o 25 50 75 100 135 175200225250 275 300 OPERATING AMBIENT TEMPERATURE (TAI-'C

92C$-42524

Fig. 1-Derating curve for a/l types.

LIMITS


MIN. MAX MIN. MAX

40 - -40 -5 - -S -

SO - -50 -

- 0.75 - -0.75 V

- 1.2 - -1.2

0.6 1.1 -0.6 -1.1

- 100 - -100 nA

- 15 - -lS

- 10 - -10 ~A

60min. 160 max.

100min. 200 max.

150min. 300 max. -

20min.

25min.

2Smin.

- 55 - 55 pF

- 15 - 15

100min. MHZ 120min.

135min.

400)--COLLECTOR-TO-EMITTER VOLTAGE (VcEI- 2 V

0_1

GES5814-GES5815--

468 468 2468 2 1 10 100

COLLECTOR CURRENT (lci - mA

4 .8 1000

Fig. 2- Typical dc forward-current transfer ratio characteristics for GES 5814 and GES 5815.

79



400 I"-COLLECTOR·TO·EMITTER VOLTAGE (VCE) 2V GES5816--GES5817--

350

II 1-- i--"" ~ ~300

125 1,c V \ o:=-B ~ 250 Q~ J1j - -~ ffi 200 ;Co. 12S'C

"l\ 0:., III I--' ~ ~ 150 r-- 25 'C -ua: f--m ..... QI-

100

I-"" "l~~IENT TEMPERATURE (T A) = 25 'C 50

0 1111111 1111111 1111111 468 468 468

0.1 1 10 100 4 6.

1000

COLLECTOR CURRENT (IC) - mA 92CS-42526

Fig. 3-Typical dc forward-current transfer ratio characteristics for GES5816, andGES5817.

100 a IB/le - 20

z GES5814 • GES5815 0 4 ;::: .. 2 0: ::> !;;:> 10s ." 6

ffi~ 4

1:1:. 2 125 "C -u ~5'~ :&> I. W-6 W 6 1-" 4 d::! 125 "C 0-' 2 r-~5Lk5"C )"; 1-0 frl> 0.1 8 -' 6 a 4

m'cllllllr ~. u 2 I 1'25 'C AIMrm~~ T~Mrl~~~rU~E I(T~UIl2j"f 0.01

2 46. 2 46. 2 466 2 4 6. 2 0.01

4 6. 0.1 1 10 100 1000

COLLECTOR CURRENT (lc) - mA 92CS-42528

Fig. 5-Typical collector·to·emitter saturation voltage characteristics forGES5814 andGES5815 (hFf = 20).

100. ;.a~:fs-il~O z 6 GES5817 0 4 ;::: .. 2 0:

~ >10 ~ -=.. : 0:1; 4 w· I:~ 2 2S'C -> :&- 1 125 'C WW • • " 6 ~~ 4 A ~IENT TEMPERATURE (TA) 2S'C

e~ 2 • ~ ~ 0.1 8 I=; -' 6 ~ S'C -a 4 u 2 125'C

0.01 125'<;11111 11111 2468 2468 2488 2468 2468

0.01 0.1 1 10 100 1000 COLLECTOR CURRENT (IC) - mA

92CS-42530

Fig. 7- Typical col/ector·to-emitter saturation voltage characteristics forGES5816andGES5817athFf = 20.

80

800 - COLLECTOR·TO·EMITTER VOLTAGE (VCE) - 2 V GES5818--

0: GESS819--01 700 -

I o. .. Z

600 .. ! 0:

I-

~ W 500 01 ...

I 0:'" 0:-::>0 400 !-- 125"

6~ ...- ffr25'C '\ 0:0: 300

;ttlll i',1\ .. f--;:: 0:

200 0 I-1H1iTl11 1'-....

... u r--Q 100 t---

0 Aiiiiitl! TEriiilll~E (TIA) I~ 12ll~11

4 6. 1

4 6. 10

2 4 •• 2 4 •• 0.1 100 1000

COLLECTOR CURRENT <Ie) - mA

Fig. 4 - Typical dc forward-current transfer ratio characteristics for GES5818 and GES5819.

100e IB/le -10

z GES5814 0 • GES5815 -;::: 4 ..

2 0: ::> I- 10 • .. > rn, 6

ffii 4

1:1:. 2 -u :&> '.1--01- AMBIENT TEMPERATURE (TA) 25 'C 601 • 1-" 4

2~'\C I I I111 d:~ 0-' 2

11,1~~,c 25

1'2 125'C I-Q ./ ~> 0.18 I'-.-::l 6 0 4

FlW u t--. r.:: 125 'C 2

0.01 12S '~lIr25 'C 11111 2 468 2 468 2 4 6 B 2 4 68 2 4 68

0.01 0.1 1 10 100 1000


92CS-42529

Fig. 6 - Typical collector·to-emitter saturation voltage characteristics forGES5814 and GES5815 athFf = 10.

1008 IBIIC -10

z • GES5816 0 4

GES5817

i 2 ::>

10. I-

~::- • 0:_ 4 III;; 25' 1:1:. 2 -u 2> I. 12S'C 01-601 1-"

• AMBIENT TEMPERATURE (TA) -125 'C

4 III1III Ii:;! 0-' 2

21~1.~1 1000' 1-0 ~>0.18 --' 6 - rj;fl,~~'C 2S'C 8 4

1111 2

IIII 0.01 125'C 111111 2 468 2 468 2 468 2 468 2 468

0.01 0.1 1 10 100 1000 COLLECTOR CURRENT (IC) - mA

92CS-42531

Fig. 8 - Typical collector·to-emitter saturation voltage characteristics forGES5816andGES5817athFf = 10.

---------______________________ Signal Transistors

100 S la/lc - 20

Z GES5818 6 GES5819 0 • ;: .. 2 0:

::l ... 10. ~> 6 0:':" • u125 'C w-t:! 2

:e~ 1. 2~lj~~ w_ 6 w 6

1111 ... " • d:" I ~~a'ErnlmIERATURE ITA); i~ll~.? o!:i 2 !-"'0 ~>O.18 I- 25 'c !-H 125· :l 6 0 • I..,::: 125 'C U

2 125'~11I 0.01 25 'c 11111 IIIII!

2 .6. • • 2 .6. 2 • 68 2 • 6 • 0.01 0.1 1 10 100 1000

COLLECTOR CURRENT (lc) - rnA

Fig. 9- Typical collector-to-emitter saturation voltage characteristics forGES5818andGES5819athFE ; 20.

> 16f---

1 Z 0

14

w .. 12 ~

w

" 10 ~ ...I 0 > 8 0: w

~ 6 Fpj; :IE I

w g 4

w p-II> 2 .. ..

a 0.1

COLLECTOR·TO·EMITTER VOLTAGE IVCE) GES5814--GES5815--

~~ TT

\~.5'CI

4 6 8 1

1251'C

1

I

---:-EITA)~2 U

• 6. 10

-~~;

4 6 • 100


2V

4 6. 1000

Fig. 11- Typical base-to·emitter voltage characteristics for GES5814 andGES5815.

> 1 Z 0 w III ~ w

" ~ 0 > 0: w 1= :iii w 6 I-w II> .. ..

16f---COLLECTOR-TO-EMITTER VOLTAGE (VeE) - 2 V GES5818--GES5819--

14

IIIIIII 12

J~~1~12V 10

8 :..--25'C - 'C

6 _ -~I\"TURE IT,.) ~ 25 ......-"NlBIENTTE~t?~. ~

• ::.:: 2

a 0.1

"'f5i1

• 68 1

II 4 68

10 4 6.

100 4 68

1000

COLLECTOR CURRENT (Ie) - rnA

92C$-42536

Fig. 13 - Typical base·to·emitter voltage characteristics for GES5818 andGES5819.


1008 -IB/'e -10 GES5818 Z 6 GES5819 0 • ;: , .. 2 0:

1 1 :> ... 108 ~> 6 0:':" 4

~! 2 -U 125'C :IE> 1~r---AMBIENT TEMPERATURE (TA) 25"C w_ 6 W ... " • IL II 25 'C &i=~ 0...1 2

Ii 1\ ~ "'0 25 ·c !;l> 0.1e

25'C ...I 6 ...I 125 "C 1/ 0 4~. 125 'C ~ U

2 12S'C

0.01 11;1 2 468 2 4 8. 2 4 68 2 4 88 2 • 68

0.01 0.1 10 100 1000

COLLECTOR CURRENT IIC) - rnA 92CS-42533

Fig. 10-Typical collector-to·emitter saturation voltage characteris· tics for GES5818 and GES5819 at hFE ; 10.

CO 16t---

LLECTOR·TO·EMITTER VOLTAGE IVCE) 2V

':" GES5816--GES5817--

Z 1.

11 J 0 w .. 12 ~ V~~I; 2 1v w

" 10 .. 1 !:i

0 8t--> 2~ 'c - 'c 0:

W .... I- 6 MPERATUI\E IT,.) ~ 25 ... i r--,.NlBIENTT;25'C: -'\' 0 • ';" ~ 12r1 w In 2 .. II ..

0 2 4 68 2 4 68 2 4 68 2 68

0.01 0.1 1 10 100 COLLECTOR CURRENT (lc) - rnA

92C$-42535

Fig. 12 - Typical base·to-emitter voltage characteristics for GES5816 andGES5817.

100 B 6 E= t== COLLECTOR·TO·BASE VOLTAGE (VCB) - 25 V 4 .. 2 ..

10 e .. 8 :>0 6 UI 4 m-a

2 .... /f/ IIlU

6:::- 18 ...... ~q ~"<'i d:z • q ow 4 ... 0: uo: 2 w:>

1/,/ ...IU ...I 0.1 8 0 U 6

4

2

0.01 ~ WOW ~ w ~ 1001W1~IWl~WO

AMBIENT TEMPERATURE (TA) - 'C 92CS-42531

Fig. 14-Typical collector'lo-base cutoff current characteristics for a/l types.

81


MPS3638, MPS3638A

Silicon Transistors

I TO-92

The GE/RCA MPS3638 and 3638A are planar epitaxial passivated PNP silicon transistors intended for general purpose applications. The units feature low collector


saturation voltage, controlled current gain and excellent frequency response. These types are supplied in JEDEC TO-92 package.

COLLECTOR TO EMITTER VOLTAGE (VcEol .......................................................................... - 25 V EMITTER TO BASE VOLTAGE (VEaol ................................................................................. - 4 V COLLECTOR TO BASE VOLTAGE (V caol ............................................................................. - 25 V CONTINUOUS COLLECTOR CURRENT (Ie) ....................................................................... - 350 mA COLLECTOR CURRENT (Pulsed)' ............................................................................... - 700 mA TOTAL POWER DISSIPATION (TAoS 25"C) .......................................................................... 360 mW TOTAL POWER DISSIPATION (T C :s; 25"C) .......................................................................... 700 mW DERATE FACTOR (T A > 25"C) ................................................................................. 3.6 mW'"C DERATE FACTOR (T c > 25"C) ................................................................................... 7 mW'"C OPERATING TEMPERATURE (T J) ......................................................................... - 65" to + 125 "C STORAGE TEMPERATURE (T STGl ........................................................................ - 65" to + 150 "C LEAD TEMPERATURE, 1/16" ± 1f32" (1.58mm ± 0.8mm) from case at lOs max. (T Ll ......................................... + 260"C • Pulse conditions: 10,..s pulse width, 2% duty cycle.

File Number 2078

82


MPS3638, MPS3638A

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (TAl = 2S·C Unless Otherwlae Specified

CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Ic = lOrnA, IB = 0)

Collector-Base Breakdown Voltage (Ic = 1001'A, IE = 0)'

Emitter-Base Breakdown Voltage (IF = 101'A, Ir: = 0)

Collector Cutoff Current (VCE = 15V, VBE = 0) (VCB = -15V, VBE = 0, TA = 100·C)

DC Forward Current Transfer Ratio (Ic = -lmA, VCE = -IOV)

(Ic = -lOrnA, VCE = -IOV)'

(I~ = -50mA,Vc~ = -IV)' (Ic = -300mA, VCE = 2V)'

Collector-Emitter Saturation Voltage (Ic = - 50mA, 'B = 2.5mA)' (Ic = -300mA, IB = -30mA)'

Base-Emitter Saturation Voltage (lc = - 50mA, 'B = 2.5mA)* (Ie = -300mA,1s = -30mA)'

Small-Signal Forward Current Transler Ratio (Ic = -IOmA,VCE = -IOV,f= 1kHz)

Output Capacttance, Common Base (VCB= -IOV,I= IMHz)

Input Capacitance, Common Base (VEB = - 0.5V, I = I MHz)

Gain Bandwidth Product (VCE = -3V,lc = -50mA)

'Pulse conditions: 300l'S pulse width, 2% duty cycle.

SYMBOL MPS3638 MIN. TYP.

V/BRICFO -25 -VtBR1CBO -25 -V/RR1I'RO -4 -

ICES - -- -

- -hFE 20 -

30 70 20 40

VCE(SAT) - -- -

VBE(SAT) - --0.8 -

hie 25 -

Ccb - -CAh - -IT - 100



LIMITS

MAX. MIN.

- -25

- -25

- -4

-35 --to -- 80

- 100

- 100

- 20

-0.25 --I -

-1.1 --0.2 -

- 100

10 -

35 -- -

MPS3638A UNITS

TYP. MAX

- -

- - V

- -- -35 nA

- -10

- -- - -- -50 -

- -0.25

- -I V

- -1.1

-0.8- -0.2

- - -- 10

pF

- 35

100 - MHz

83


MPS6531, MPS6532, MPS6534

Silicon Transistors

I TO-92

The GE/RCA MPS 6531, MPS6532 are NPN and MPS6534 is tions. PNP values are negative; observe proper polarity. a PNP planar epitaxial passivated silicon transistors de- These types are supplied in JEDEC TO-92 package. signed for general purpose switching and amplifier applica-


MPS6531 MPS6532 MPS6534 UNITS COLLECTOR TO EMITTER VOLTAGE (V CEel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 30 40 V EMITTER TO BASE VOLTAGE (VEBel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 4 V COLLECTOR TO BASE VOLTAGE (VCBel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 50 40 V CONTINUOUS COLLECTOR CURRENT (Ic). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 600 600 rnA TOTAL POWER DISSIPATION T A :S 25·C (PT). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 350 350 mW TOTAL POWER DISSIPATION T C :S 25·C (PT) .................................... 1 1 1 W DERATE FACTOR, T A > 25·C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8 2.8 2.8 mW'·C DERATE FACTOR, T C > 25·C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 8 mW'·C OPERATING TEMPERATURE (T J) ............................................. . -5510 +150 ·C STORAGE TEMPERATURE (T 8TG) ............................................ . -6510 +150 ·C LEAD TEMPERATURE 1116" ± 1/32" (1.58mm ± 0.8mm) from case al 10s max. (T U ....... . +260 ·C

File Number 2079 84 _______________________________________________________________ __


MPS6531, MPS6532, MPS6534

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (TA) = 25°C Unless Otherwise Specified

CHARACTERISTICS SYMBOL MPS6531

MIN. MAX.

Collector-Emitter Breakdown Voltage (lc = 10mA, 18 = 0) VIBRIECO 40 -(Ic = 10mA. VRE = 0) - -

Collector-Base Breakdown Voltage (Ic = lOI'A.IE = 0) V1BRICBO 60 -

Emitter-Base Breakdown Voltage (IE = 1 0i<A. Ic = 0) VIBRIEBO 5 -Collector-Cutoff Current

(VCB = 30V.IE = O)(VCB = 40Vfor6531) - 50

(VCB = 20V.IE = O)(VCB = 30Vfor6532) ICBO - -(VCR = 30V.IE = 0, Tc = 60·C)(VCR = 40V for 6531) - 2

(VCB = 20V.IE = 0, TA = 60·C)(VCB = 30Vfor6532) - -Emitter-Base Reverse Current

(VEB = 4V. Ic = 0) lEBO - 100

(VER = 3V. Ic = 0) - -DC Forward Current Transfer Ratio

(VCE = 1.0V.lc = 10mA) hFE 60 -(Vr.E = 1.0V.Ir. = 100mA)" 90 270

(VCE = 10V. Ic = 500mA)" 25 -Collector-Emitter Saturation Voltage

(lc = 100mA.IB = 10mA)" VCEISATI - 0.3

Base-Emitter Saturation Voltage (lr. = 100mA. 18 = 10mA), VsElSATl. - 1.2

Collector-Base Capacitance Voltage (VCE = 10V, IE = 0, f = lMHz) Ccb - 5

"Pulse condition: S300l'S pulse Width, 2% duty cycle.



LIMITS

MPS6532

MIN. MAX

- -

30 -

50 -5 -

- -- 100

- -- 5

- 100

- -

- -30 -- -

- 0.5

- 1

- 5

MPS6534 UNITS

MIN. MAX.

-40 -- -

V

-40 --4 -- -50 nA

- -- -2

I'A - -

- - nA

- -100

60 -90 270 -25 -

- -1.2 V

- -1.2

- 6 pF

_________________________________________________________________ 85


MPS-AOS, A06, ASS, AS6

Silicon Transistors

I TO·92

The GE/RCA MPS·A05, 06 NPN types and MPS·A55, 56 PNP types are planar epitaxial passivated silicon transistors de· signed for medium current general purpose amplifier appli·

MAXIMUM RATINGS, Absolute·Maximum Values:

cations. PNP values are negative; observe proper polarity. These types are supplied in JEDEC TO·92 package.

MP8-A05 MPS·A06 MPS·A55 MPS·A56

COLLECTOR TO EMITTER VOLTAGE (VcEol ................................................. 60 80 V EMITTER TO BASE VOLTAGE (VEeel. . . . .. .. . . .. . .. . . .. . . . .. .. . . . . . .. . .. . . . . . . . . . . .. . . . .. . . . 4 4 V COLLECTOR TO BASE VOLTAGE (Vceol. .................................................... 60 80 V CONTINUOUS COLLECTOR CURRENT (Ie>. . .. .. . . . . . .. . . . .. . . .. . . . .. . .. . . . . .. . . . .. . . . . . . . . . 500 mA TOTAL POWER DISSIPATION T A :S 25'C (PTJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625 W TOTAL POWER DISSIPATION Tc :S 25'C (PTJ. . . . . . .. . .. . . .. . .. . . . .. . .. . . . . .. . .. . . . . .. . . . . .. . . 1.5 W DERATE FAClOR, T A > 25'C .. . . .. . . .. . .. .. . . .. . . .. . .. . .. . . . . .. . .. . . . . . . . .. . . . .. . . . . . . . . . 5 mW/'C DERATE FAClOR, Tc > 25'C ....................................... ........ ........ ...... 12 mW/'C OPERATING TEMPERATURE (T J) .. . . .. .. . . . .. . . .. . .. . .. . . . .. . . .. . .. . . . . . .. .. .. . . . . . .. . .. . . - 55 10 + 150 'C STORAGE TEMPERATURE (T STG)" . . . . .. .. . .. . . .. . .. . .. . . . .. . . .. . . . . . . . . . . .. .. . . . . . .. . .. . . - 55 10 + 150 'C LEAD TEMPERATURE 1/16" ± 1132"(1.58mm± 0.8mm) from case al lOs max. (TLl................... . +230 'C

File Number 2072

86



ELECTRICAL CHARACTERISTICS, At Ambient Temperature (T A) = 25°C Unless Olherwlse Specified


Collector-Emiller Breakdown Voltage (Ic = lmA.IB = 0)" VIBRIECO

Collector-Base Breakdown Voltage (lc= 100,.A.IE = 0) V(BRICBO

Emitter-Base Breakdown Voltage (IE = 100,.A, Ic = 0) VIBRIEBO Collector-Cutoff Current

(VCB = 60V.IE = 0) ICBO (VCR = BOV, IF = 0)

(VCE = 60V, IB = 0) ICED DC Forward Current Transistor Ratio

(Ve:F = lV, Ie: = 10mA) hFE (VCE = IV, Ic = 10mA)"

Collector-Emitter Saturation Voltage (Ic = 100mA, Is = 10mA)" VCE(SATl

Base-Emitter Saturation Voltage (Ic = 100mA, IB = 10mA)

VBE(SAT)

Base-Emiller Voltage (Vee = lV,1e = 100mA)

VBE(ON)

Collector-Base Capacitance (Vcb = 10V, IE = 0, 1= lMHz) Ccb

Gain Bandwidth (VCE = 5V, Ic = 30mA, I = 50MHz) IFE

• Pulse condtlons: ::s 300"s pulse width, ::s 2% duty cycle

.. 10 Z • w • .. a: • ,,-U w • 25'C .. 1-.. - , '.1 ~ 10

1

oi • UIIPER"TURE 8 .... 4 ~8\EtlTT_25'9 gil! _ IT"I-

• IIIL -.'C 0"'

_ _55 wZ NC 0.1 ~t= 8 • :I 4 .. 0 Z •

0.01

• • • 2 4 •• 2 4 •• 0.1 10 100 1000

COLLECTOR CURRENT ('cl - mA

Fig. 1 - Normalized de forward-current transfer ratio characteristics for MPS-A05 and MPS-A06.

LIMITS

MPS-A05,A55 MPS-A06,56 UNITS

MIN. MAX. MIN. MAX

60 - BO -

60 - BO - V

4 - 4 -

- 100 - -nA

- - - 100

- 100 - 100

50 - 50 - -

50 - 50 -

- 0.25 - 0.25

- 1 - 1 V

- 1 - 1

MPS-A05, A06 MPS-A55, A56 -

- 12 - 12 pF

5 BO - 50 -

ICIIB = 10 Z 10 '0 8

~ • a: 4 ,,> !;il 2 "'". a: c 1 w m

I:~ • • i~ 4 Ww

~~ 2

a: oJ AMBIENT TEMPERATURE (TAl = 25'C 00 0.1 t;> • w • oJ 4t-- -SS'C oJ 0 U 2

0.01 125 ·C

2 4 •• 2 4 •• 2 4 2 4 •• 0.1 1 10 100 1000 COLLECTOR CURRENT (lcl - mA

Fig. 2-Typical collector·to-emitter saturation voltage characteristics for MPS-A05 and MPS-AOB.

87



1.6 IC/IB" 10 (FOR VBE.a.) AMBIENT TEMPERATURE ITA)

4 68 4 68 4 68 2 4 68 0.1 1 10 100 1000


Fig. 3- Typical base-to-emitter saturation voltage characteristics for MPS-A05, MPS-A06.

IC/IB 10

-0.1 4 6.

-1 4 6.

-10 4 6.

-100 COLLECTOR CURRENT (IC) - mA

4 6. -1000

Fig. 5- Typical col/ector-to-emitter saturation voltage characteristics for MPS-A55 and MPS-A56.

I- 10 z • W 0: 6 0: 4 ,,-U W AMBIENT TEMPERATURE (TA) 25"C c1" 21-,25 "C 0:-

~2 1 f-...... o:~ :~55"C 00: "0: 4 UW C .. CUI 2 wZ ~: 0.1 -J I- • ~ 6 0: 4 0 Z 2

0.01 2 4 68 2 4 6. 2 4 2 4 6.

-0.1 -1 -10 -100 -1000 COLLECTOR CURRENT (lcl - mA

Fig. 4 - Normalized de forward-current transfer ratio characteristics for MPS-A55 and MPS-A56.

1.. ICIIB" 10 (FOR VBEsa.)

AMBIENT TEMPERATURE (TAl 1--f-l-1-f.I.j",---+-+++++llI

o

-0.1

1111 468 468 468

-1 -10 -100


4 6. -1000

Fig. 6 - Typical base-to-emitter saturation voltage and base-to-emitter voltage characteristics for MPS-A55 and MPS-A56.


Load 1 • Emitter Lead 2· Base Lead 3 • Collector

88


MPS-A12


I TO-92

The GE/RCA MPS-A 12 is a planar epitaxial passivated NPN silicon Darlington transistor designed for preamplifier input

applications where high impedance is a requirement. This type is supplied in JEDEC TO-92 package.


COLLEC1OR 10 EMITTER VOLTAGE (VCEel . . . . . . ..................................................... 20 V COLLEC1OR TO BASE VOLTAGE (Vceol .............................................................................. 20 V EMITTER 10 BASE VOLTAGE (VEBel ................................................................................... 4 V CONTINUOUS COLLECTOR CURRENT (Ie) ......................................................................... 500 mA TOTAL POWER DISSIPATION (T A S 25·C ........................................................................... 625 mW DERATING FACTOR (T A> 25·C ................................................................................. 5 mW/·C OPERATINGTEMPERATURE(TJ) .......................................................................... -55to +150·C STORAGE TEMPERATURE (T STGl ......................................................................... - 55· to + 150·C LEAD TEMPERATURE, 1116" ± 1132" (1.58mm ± 0.8mm) from case for lOs max. (T t.l ......................................... + 230·C

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (TAl = 25·C Unless Otherwise Specified

LIMITS


Collector-Emitter Breakdown Voltage (Ic = 100,.A) BVCES 20 - V

Collector Cutoff Current (VCE = 15Vdc, VBE = 0) 'CES - 100

Collector Cutoff Current (VCB = 15Vdc, I~ = 0) ICBO - 100 nA

EmitlerCutoffCurrent(VEB = 10Vdc,Ic = 0) 'EBO - 100

DC Forward Current Transfer Ratio(lc = 10 mAde, VCE = 5V) hI''' 20,000 - -Small-Signal Current Transfer Ratio (Ic = 10 mAde, V CE = 5 Vdc, f = 1 kHz) hie 20,000 - -Collector-Emitter Saturation Voltage

(Ic = 10 mAde, 'B = 0.01 mAl VCE(SATI - 1 V

Base-EmitlerOn-Voltage(lc = 10 mAde, VCF = 5V) V.BE(QNL - 1.4

OutputAdmitlance(VCB = 10Vdc, IE = 0, f = 100 kHz) Cob - 8 pF

File Number 2073

89


MPS-A12

I- 10 IIIU~,c z 8 w 8 0: 0: 4 !>'C ::>-U w ~,.~ ol' • :I\lI'E\~ 0:-

1 ~E~~EI'~ ~2 o:!< 8~~Etl~ 00: 8 ,,~V>\

55'C "'0: 41-' uW D'" •

,..... DUI w Z ........ 1-" No( 0.1 _0: ~I- 8 :I! 6 0: 4 0 Z

'1--- COLLECTOR-TO-EMITTER VOLTAGE (VCE) = 5 V

0.01 COLLECTOR CURRENT (lc) = 2 mA 4 4 468 68 68 • 4 68

0.1 1 10 100 1000 COLLECTOR CURRENT (Icl - mA

ICIIB Z 100 0 8

~ 6 0: 4 ::» !<I 2

"'''' 0:- 10 w· I:~ 8

6 i~ 4 ww

~~ 2 0: ... 00 1 13> 8 W 6 ...

4 ... 0 u 2

0.1

0.1

1000

4 .8 1

AMBIENT TEMPERATURE (TAl

-lJjJ 1m

II 4 68

10 4 68

100 COLLECTOR CURRENT (lCl - mA

25'C

4 68 1000

I2CS.42S71

Fig. 1 - Normalized dc forward-current transfer ratio characteristics. Fig. 2 - Typical collector-to-emilter saturation voltage characteristics.

90

3.2 lellB = 1000 (FOR VBE •• I) AMBIENT TEMPERATURE (T A)

~ 2.8 z 'iil 0 ., ~ 2:.2.4

g;+:,~ !C=~ 2 ",w'"

ffig:1.6 VBE( •• I), -55 'C I:ww -"I: t- _ .5'C ~~i 1.2 V~E( •• ')' TA ..... ''''w V ,,5V

~g~08 r-- VBE', 25 'C:,1iC':.L w , . ~ oO'C ~

w "BE~ ~ ., ~O.4 10-

0 ~~LIUI~ I 0.1

4 68 1

4 68 10

4 68 100


+--

4 68 1000

UCS·42512

Fig. 3 - Typical base-to-emitter saturation voltage and base-to-emilter voltage characteristics.




MPS-A13, MPS-A14


I TO-92

The GE/RCA MPS-A 13 and A 14 are planar epitaxial passivated NPN silicon Darlington transistors designed for preamplifier input applications where high impedance is a

MAXIMUM RATlNGS,Absolute-Maximum Values:

requirement. These types are supplied in JEDEC TO-92 package.

COLLECTOR TO EMITTER VOLTAGE (VCEoJ ........................................................................... 30 V COLLECTOR TO BASE VOLTAGE (VeBoJ .............................................................................. 30 V EMITTER TO BASE VOLTAGE (VEBoJ .................................................................................. 10 V CONTINUOUS COLLECTOR CURRENT (Ic) ......................................................................... 500 mA TOTAL POWER DISSIPATION (TAoS 25·C) (PT) ...................................................................... 625 mW TOTAL POWER DISSIPATION (T e oS 25·C) (PT) '" ..................................................................... 1.5 W DERATE FACTOR (TAoS 25·C)(PT) ............................................................................... 5 mW/·C DERATE FACTOR (Te oS 25·C) (PT) .............................................................................. 12 mW/·C OPERATINGTEMPERATURE(TJ) ......................................................................... -55· to +150·C STORAGE TEMPERATURE (T STG)' ........................................................................ - 55· to + 150·C LEAD TEMPERATURE, 1/16" ± 1132" (1.5Bmm ± O.Bmm) from case for lOs max. (T t.l ......................................... + 230·C

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (TAl = 25·C Unless Otharwlse Specified


Collector-Emitter Breakdown Voltage (Ie = 100,..A, IB = 0) BVCES ColiectorCutoffCurrent(VeB = 30V, IE = 0) ICBO Emitter Cutoff Current (VBE = 10V,Ic = 0) I"'Bo DC Forward CurrentTransfer Ratio (Ic = 10 mA, VCE = 5V)'

MP5-A13 hFE MP5-A14

DC Forward Current Transfer Ratio (Ie = 100 mA, VeE = 5V)' MP5-A13 hFE MPS-A14

Collector-Emitter Saturation Voltage (Ic = 100 mA, IB = 0.1 mAl' VCEr.all Base-Emitter On-Voltage (Ic = 100 mA, V CE = 5 V) VBErONl Small-Signal Current Gain

(I~ = 30mA, V~F = 10V, f = 20 MHz) h,s. Output Capacitance (VCB = 10V,IE = 0, f = 100kHz) Cob Noise Figure(lc = 10 mA, VCE = 5 V, Rs = 100 kQ, f = 1 kHz) NF

'Pulse conditions: oS 300"s pulse width, S 2 % duty cycle


Lead 1 - EmlHer Lead 2 - Base Lead 3 - Collector

LIMITS

MIN.

30

--

5,000

10,000

10,000

20,000

--

4

--

TYP. MAX. UNITS

- - V

- 100 nA - 100

- -- -

- -- -

0.75 1.5

2 V

1.29

- - MHz

5.4 B pF 2 - dB

File Number 2074 _________________________________________________________________ 91


MPS-A42, A43, MPS-A92, A93

I Complimentary High Voltage Silicon Transistors

TO-92

The GE/RCA MPS-A42, A43 NPN types and the MPS-A92, applications. PNP values are negative observe proper A93 PNP types are complementary planar epitaxial silicon polarity. These types are supplied in JEDEC TO-92 package. transistors designed for high voltage switching and amplifier


MPS-A43,A93 MPS-A42,A92 COLLECTOR TO EMITTER VOLTAGE (VcEol. ............................................ 200 300 V EMITTER TO BASE VOLTAGE (VEBol. .................................................. 6 6 V COLLECTOR TO BASE VOLTAGE (VcBol. ............................................... 200 300 V CONTINUOUS COLLECTOR CURRENT (Ie> . . . . . .. . .. . .. . . .. .. .. . . . .. . .. .. . . . . .. . . . . .. .. 500 500 mA TOTAL POWER DISSIPATION (T c S 25·C)(PT) .. .. . .. . .. . .. . .. .. . . . . .. . . .. . . . . . .. . .. . .. .. 1500 mW TOTAL POWER DISSIPATION (T A S 25·C)(PT)" .. . . .. .. . .. . . .. . . .. . .. . . . .. . .. .. . . . .. . . . . 625 mW DERATE FACTOR Tc ~ 25·C .. .. . .. . . .. .. . .. . .. . .. .. . . . . . .. . . . .. . .. . . .. . . . .. .. . .. . . . . 12 mW/·C DERATE FAClOR T A ~ 25·C . . .. . . .. . . .. . . . . . . .. . . .. . . . .. . .. . . .. . . .. . . . . . . .. . . . . . . . . . 5 mW/·C OPERATINGTEMPERATURE(TJ) ..................................................... -5510 +150 ·C STORAGE TEMPERATURE (T STG)' . . .. . .. . . . . . . . . . . .. . ... .. . . .. . .. . . .. . . . . .. .. . .. . . .. . . - 55 10 + 150 ·C LEAD TEMPERATURE, 1/16" ± 1132" (1.58mm ± 0.8mm) from case all Os max. (T d. . . . . . . . . . . . . . . + 260 ·C

File Number 2075 92 ____________________________________________________________ __


MPS-A42, A43, MPS-A92, A93


CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Ie = 10mA.IB = 0)

Collector-Base Breakdown Voltage (Ic = tOO,..A.IE = 0)

Collector Cutoff Current (VeB = 160V.IE = 0)

(VCR = 200V.IF = 0)

Emitter Cutoff Current (VEB = 4V. Ic = 0)

(VEB = BV. Ie = 0)

(VEB = 3V. Ic = 0)

DC Forward Current Transfer Ratio (VCE = 10V.lc = 10mA)

(VeE = 10V.le = 3OmA)

(VCE = 10V.lc = lmA)

Coliector·Emitter Saturation Voltage (Ie = 20A. IB = 2mA)

Base Emitter Saturation Voltage (Ic = 2OmA. IR = 2mA)

Gain Bandwidth Product (VCE = 10V.lc = 20mA. 1= 20 MHz)

LIMITS

SYMBOL MPS-A42 MPS-A43 MPS-A92

MIN. MAX. MIN.

BVeEO 300 - 200

BVCBO 300 - 200

leBO - - -- 100 -

- - -lEBO - 100 -

- - -

40 - 40 hFE 40 - 50

25 - 25

VCE(SATI - 0.5 -

VBELSAn - 0.9 -

IT 50 - 50



MAX MIN. MAX.

- 300 -

- 300 -

100 - -- - 250

100 - -- - -- - 100

- 40 -200 25 -- 25 -

0.5 - 0.4

0.9 - 0.9

- 50 -

MPS-A93 UNITS

MIN. MAX

200 -V

200 -

- 250

- -

- - nA

- -- 100

40 -30 150 -25 -- 0.4 V

- 0.9

50 - MHz

93

Signal Transistors _______________________________ _

MPS-A63, MPS-A64


I TO·92

The GE/RCA MPS·A63 and A64 are planar epitaxial passiva· requirement. These types are supplied in JEDEC TO·92 ted PNP silicon Darlington transistors designed for preampli- package. fier input applications where high impedance is a


COLLECTOR TO EMITTER VOLTAGE (VCEel ......................................................................... - 30 V COLLECTOR TO BASE VOLTAGE (VCBel ............................................................................. - 30 V EMITTER TO BASE VOLTAGE (VEBel ................................................................................ -10 V CONTINUOUS COLLECTOR CURRENT (Iel ....................................................................... - 300 mA TOTAL POWER DISSIPATION (T A:S 25·C)(Pr) ...................................................................... 625 mW TOTAL POWER DISSIPATION (Tc :S 25·C)(Pr) ..................................................................... 1500 mW DERATE FACTOR (T A ~ 25·C) (Pr) ............................................................................... 5 mW/·C DERATE FACTOR (T C ~ 25·C) (Pr) .............................................................................. 12 mW/·C OPERATING TEMPERATURE (T J) ......................................................................... - 65· to + 150·C STORAGE TEMPERATURE (T STG)' ........................................................................ - 55· to + 150·C LEAD TEMPERATURE, lh6" ± 1/32" (1.58mm ± 0.8mm) from case for lOs max. (T U ......................................... + 260·C

File Number 2076

94 ____________________________________________________________ ___


MPS-A63, MPS-A64



Collector-Emitter Breakdown Voltage (Ic = 1001lA, IB = 0) BVCES Collector Cutoff Current (VCB = 30V, IE = 0) ICBO Emitter Cutoff Current (VBE = 10V, Ic = 0) lEBO DC Forward Current Transfer Ratio(lc = lOrnA, VCE = 5V)'

MPS-A63

MPS-A64

DC Forward Current Transler Ratio (lc = 100 rnA, VCE = 5V)' hFE MPS-A63

MPS-A64

Small Signal Current Gain (Ic = lOrnA, V CE = 5 V, I = 1 kHz) hie Collector-Emitter Saturation Voltage~ = 100 rnA, IB = 0.1 rnA)' VCElSATI Base-EmitterOn-Voltage(lc = 100mA,VCE = 10V) VBEION Gain-Bandwidth Product

(lc = 100 rnA, VCE = 5V, 1= 100 MHz) IT Output Capacitance (V CB = 10 V, IE = 0, I = 100kHz) Ceb Noise Figure (Ic = 1 rnA, VCE = 5 V, Is = 100 kQ, 1= 1 kHz) NF

'Pulse conditions: ,;; 300llspulsewidth,';; 2%dutycycle



MIN.

30

--

--

-----

125

-

LIMITS UNITS

TYP. MAX.

- - V

- -100 nA - -100

5,000 -10,000 -

-10,000 -20,000 -

35 - --O.B -1.5 V -1.25 -2

- - MHz

4 - pF

2 - dB

95


MPS-A65


I TO-92

The GE/RCA MPS-A65 is a planar epitaxial passivated PNP silicon Darlington transistor designed for preamplifier input

applications where high impedance is a requirement. These types are supplied in JEDEC TO-92 package.


COLLECTOR TO EMITTER VOLTAGE (VeEsl ........................................................................... 30 V EMITTER TO BASE VOLTAGE (VEBel ................................................................................... 8 V COLLECTOR TO BASE VOLTAGE (Veaol .............................................................................. 30 V CONTINUOUS COLLECTOR CURRENT (Iel . . . . . . .. . . . . . .. . . .. . . . . . . . .. .. .. . .. . . .. . . . .. . . . . . .. . . . .......... 300 mA TOTAL POWER DISSIPATION (T A:S 25°C) (PT) ...................................................................... 625 mW TOTAL POWER DISSIPATION (T e :S 25°C)(PT) ..................................................................... 1500 mW DERATE FAClOR (T A ;;: 25°C) (PT) ............................................................................... 5 mW/oC DERATE FAClOR (Te ;;: 25°C)(PT) .............................................................................. 12 mW/oC OPERATINGTEMPERATURE(TJ) ......................................................................... -55° to +150°C STORAGE TEMPERATURE (T STG)' ........................................................................ - 55° to + 150°C LEAD TEMPERATURE, 1/16" ± 1/32" (1.58mm ± 0.8mm) Irom case lor lOs max. (T U ......................................... + 230°C


LIMITS

CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS

Collector-Emitter Breakdown Voltage (Ic = IOOI'A, IB = 0) BVCES 30 - - V

Collector Cutoff Current (V Qil = 30V, Ie; = 0) leBO - - 100 nA

Emitter Cutoff Current (VRF = 8V,Ic = 0) IERO - - 100

DC Forward Current Transler Ratio Ic = 10mA, VCE = 5V' hFE 50,000 - - -Ie = 100mA, VeE = 5V' 20,000 - -

Collector-Emitter Saturation Voltage (I~ = 100 mA,la = 0.1 mAl VCF(SATl - 0.9 1.5 V

Base-EmitterOn-Voltage(lc = 100mA, VCE = 5V)' VBEIONl - 1.45 2

Gain-Bandwidth Product (Ie = 100 mA, VeE = 10V, 1= 50 MHz) fT 100 125 - MHz

Output Capacnance (ICB = 10 mA, IE = 0, I = 100MHz) Cob - 2.5 - pF

Noise Figure (lc = 1 mA, VCE = 5 V, Rs = 100 kQ, 1= 1 kHz) NF 2 - dB

'Pulseconditions::s 3OOl's pulse width, :S 2%dutycycle

File Number 2077 96 ________________________________________________________________ _

----------_____________________ Signal Transistors

MPS-A65

COLLECTOR-TO-EMITTER VOLTAGE (VCE) = - 5 V 2 Iclla 1000

0: 105 • w • "-In 4

Z .. 0: 2 l-

!zlii1()4 r-w"- • II::S. 6 §9 4 u!c I--~o: 2

~ 103 0: • 0 • "-g 4

2

102

-0_1

100'C

II III 55'C

AMalENT TEMPERATURE (TA) = 25'C

• 2 2 46 468 468 2 -1 -10 -100


4 6. -1000

z -10 0 • ;:: 6 .. 0: 4 :» !C) 2 In;:-

-ss.:.ll o:m -1 w·

I:~ • ,~ 6 i2! 4 Ww AMBIENT TEMPERATURE (T A) - 25°C

*~ 2 0: ....

~g -0.1 8 W 6 .... 4 .... 0 U 2

-0.01 2 4 •• 2 4 •• 2 4 8. 2 4 8.

-0.1 -1 -10 -100 -1000

COLLECTOR CURRENT (IC) - mA lacS.US?"

Fig. 1-Typical dc forward-current transfer ratio characteristics. Fig. 2 - Typical collector-la-emitter saturation voltage characteristics.

3.2 Ic/la ~ 1000 (FOR VaE'.!)

> AMalENT TEMPERATURE (TAl

Z )

2.8 0 Iii

~ ID > 2.4

a:;.-;

~=~ 2 :J wI-lD ....

ffi~g VaE (s.~. -S5'C

r-I:~ ffi-1 •6

T - 2S'C

~!:i 1:-1 2 VaE (satl. A - __ sV 6 0 :; . VaE. 25'C. VCE- r-~> ~ ~OO'C w g-o.a In VaElsatl • .lJ .. w ID In

~-O.4

0 2 4 2 2 4 .6

-0.1 6.

-1 4 6.

-10 -100

COLLECTOR CURRENT (lc) -mA

2 4 86 -1000

12<:8-42515

Fig. 3- Typicalbase-to-emittersaturation voltageandbase-to-emitter voltage characteristics.



97

D


MPS-L01, MPS-LS1

Silicon Transistors

I TO·92

The GE/RCA MPS·L01 NPN type and the MP5-L51 PNP type are planar epitaxial silicon transistors designed for general· purpose, high·voltage amplifier applications. PNP values are


negative; observe proper polarity. These types are supplied in JEDEC TO·92 package.

MPS·L01 MPS·L51 COLLEClORlOEMITTERVOLTAGE(VCEol ................................................. 120 100 V EMITTER lO BASE IIOLTAGE(VEeol.. ...................................................... 5 4 V COLLEClOR lO BASE VOLTAGE (Vcaol.. ................................................... 140 100 V CONTINUOUSCOLLEClORCURRENT(Ic).................................................. 150 600 mA lOTAL POWER DISSIPATIONTc ~ 25°C (PT).. ............................................... 1500 1500 mW lOTAL POWER DISSIPATION T A ~ 25°C (PT)' . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . 625 625 mW DERATE FAClOR, Tc > 25°C. .. .. .. .. .. .. . . . . .. . .. . .. . .. .. .. . .. . . .. . .. . . .. . . . .. .. .. . .. . . . 12 12 mW/oC DERATE FAClOR, TA > 25°C . .. .. .. .. .. .. . . . . .. . .. . .. . .. .. .. . .. . .. . . .. . . .. . . .. . .. .. . . .. . . 5 5 mW/oC OPERATINGTEMPERATURE(TJ).......................................................... -55CIO +150 °c SlORAGE TEMPERATURE (T ST(V" .. . .. . .. .. . .. . .. . .. . .. .. . .. . . .. .. .. .. .. . . .. . . . .. .. .. . .. . - 65C 10 + 150 °C LEAD TEMPERATURE 1/16" ± 1f.l2"(1.5Bmm±0.Bmm) from case at lOs max. (TtJ .................... +260 °c

File Number 2071 98 ________________________________________________________________ _


MPS-L01, MPS-LS1


CHARACTERISTICS SYMBOL MPS-L01

MIN. MAX.

Collector-Emitter Breakdown Voltage (Ir. = lmA,IR = 0)' BVCEO t20 -

Collector-Base Breakdown Voltage (Ic = 100"A,IE = 0) BVcso 140 -

Emitter-Base Breakdown Voltage (IE = t O"A,lc = 0) BVEBO S -DC Forward Current Transler Ratio

(Ic = SOmA, VCE = SV)

(lc;. 10mA, VCE = SV) Collector Saturation Voltage

(Ir. = tOmA,lR = lmA)

(Ic = SOmA, Is = SmA)

Base-Emiller Saturation Voltage (Ic = 10mA,Is = lmA)

(lr. = SOmA, IR = SmA)

Gain-Bandwidth Product (Ic = 10mA, VCE = 10V, 1= 100MHz)

Output Capacitance (Vr.B = 10V,IF = 0, 1= 1 MHz)

'Pulse condition: 300"s pulse width, 2% duty cycle.

hFE -SO

VCE(SAT) --

VSE(SAT) --

IT 60

Cob -



-300

0.2

0.3

1.2

t.4

-8

LIMITS

MPS-L51 UNITS

MIN. MAX

100 -V

100 -4 -

40 250 -- -

- 0.2S

- 0.3 V

- 1.2

- 1.2

60 - MHz

- 8 pF

_________________________________________________________________ 99

100 ____________________________________________________________ __

Unijunction Transistors and Switches Technical Data

_________________ 101

..

UniJunction Transistors and Switches

Unijunction Transistors and Switches Selector Guide IF v.

[Max.] [Min.] Type Structure mA V Vs or 1:/ Package FilaNo. PagaNo.

2N4870 UJT 50 30 0.56-0.75 TO-92 1949 108 2N4871 UJT 50 30 0.7-0.85 TO-92 1949 108 GES2646 UJT 50 30 0.56-0.75 TO-92 2047 103 GES2647 UJT 50 30 0.68-0.82 TO-92 2047 103 GET4870 UJT 50 30 0.56-0.75 TO-18 1949 108

GET4871 UJT 50 30 0.7-0.85 TO-18 1949 108 2N2646 UJT 500 30 0.56-0.75 TO-18 2047 103 2N2647 UJT 500 30 0.68-0.82 TO-18 2047 103 2N4987 SUS 175 30 6.0-10.0 TO-98 2049 115 2N4990 SUS 175 30 7.0-9.0 TO-98 2049 115

2N4988 SUS 175 30 7.5-9.0 TO-98 2049 115 2N4989 SUS 175 30 7.5-8.2 TO-98 2049 115 2N6027 .PUT 150 40 0.2-1.6 TO-98 2050 122 2N6028 PUT 150 40 0.2-0.6 TO-98 2050 122 GES6027 PUT 150 40 0.2-1.6 TO-92 2050 122

GES6028 PUT 150 40 0.2-0.6 TO-92 2050 122 2N4991 SBS 175 6.0-10.0 TO-98 2048 111 2N4992 SBS 175 7.5-9.0 TO-98 2048 111

102 ______________________________________________________________ __

_______________________ Unijunction Transistors and Switches

2N2646, 2N2647, GES2646, GES2647

II Silicon Unijunction Transistors

TO-92 TQ-18

The GE/ACA 2N2646, GES2646 and 2N2647, GES2647 silicon-unijunction transistors have an entirely new structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.

The 2N2646 and GES2646 are intended for general purpose industrial applications where circuit economy is of primary importance, and is ideal for use in firing circuits for Silicon


Controlled Aectifiers and other applications where a guaranteed minimum pulse amplitude is required. The 2N2647 and GES2647 are intended for applications where a low emitter leakage current and a low peak point emitter current (trigger current) are required (Le., long timing applications), and also for triggering high power SCA's. These types are supplied in J EDEC TO-1S package (2N2646, 2N2647) and in JEDEC TO-92 packages (GES2646, GES2647).

EM lITER REVERSE VOLTAGE ...................................................................................... 30 V INTER BASE VOLTAGE ............................................................................................. 35 V RMS EM lITER CURRENT ......................................................................................... 50 mA PEAK EM lITER CURRENT (Note 1) .................................................................................... 2 A POWER DISSIPATION (Note 2) .................................................................................... 300 mW OPERATING TEMPERATURE RANGE ...................................................................... - 65· to + 125·C STORAGE TEMPERATURE RANGE ........................................................................ - 65· to + 150·C

NOTES: 1. Capacitor discharge - 1 O"F or less, 30 V or less.

2. Derate 3 mW/·C increase in ambient temperature. The total power dissipation (available power to Emitter and Base-Two) must be limited by the external circuitry.

'12 -12 f

Vaa

VE I I

6 1 I 0

92CS-42400

Fig. 1 - Unijunction transistor symbol and nomenclature used for current and voltage circuit.

vt .----.... --O+20V ± 0.5V

j~ VOII

RBI zon :'1'110

9ZCS-42399

Fig. 2 - Typical base-1 peak-pulse voltage circuit.

EMITTER VOLTAGE

VE

-CUTOFF REGION

Vp

RESISTANCE --J- SATURATION ---REG I ON I REGIO N

I-PEAK POINT I

I I EMITTER-TO-BASE ONE-DIODE CHARACTERISTlC\

VALLEY POINT

rEMITTER I CURRENT

-tt+~--------~-----~50~M7A---IE

92CS-42401

EO

Fig. 3 - Static emitter characteristics waveforms.

File Number 2047

103

..

UniJunctlon Transistors and Switches _____________________ _

2N2646, 2N2647, GES2646, GES2647

ELECTRICAL CHARACTERISTICS, At AmbIent Tempereture (T A> = 25°C Unless Otherwise Specified

LIMITS

CHARACTERISTICS SYMBOL 2N2646,GES2646 2N2647,GES2647 UNITS


Intrinsic Standoff Ratio (Vss = 10V) " 0.56 0.69 0.75 0.68 0.77 0.82 -Interbase Resistance (Vse m 3 V,IE = 0) Reea 4.7 6.7 9.1 4.7 6.7 9.1 kQ

Emitter Saturation Voltage (VBB = 10 V, IE = 50 mAl VElsat) - 2 - - 2 - V

Modulated InterbaseCurrent(Ves = 10V,IE = SOmA IS2Imod) - 24 - - 27 - mA

Emitter Reverse Current (VS2E - 30V,IsI = 0) lED - 0.001 12 - 0.001 0.2 ~A

Peak Point Emitter Current (Ves = 25 V) Ip - 0.8 5 - 1 2

Valley Point Current (VBB - 20 V, Re2 - 100 Q) Iv 4 5 - 8 9 18 mA

Base-One Peak Pulse Voltage (Note 1)(Fig. 2) VOl'll 3 8.5 - 6 9.5 - V

NOTES:

1. The Base-l peak pulse voHage is measured in the circuH below. This specification on the 2N2646 and 2N2647 is used to ensure a minimum

pulse amplitude for applications In SCR firing circuits and other types of pulse circuits.

2. SCR firing conditions-see Figs. 19,20,21, and 22.

20 AMBIENT TEMPERATURE (TA )-2S0C

> I I .. 16 '" > -'" 14

'" ~ 12 0 > ... to <II ... m a 0 VBS-30V I;- 6

'" Vea- 20V ...

~ ... 4 ~~BB:01OV ... j 'LVeBoSV :tB2t '" 2

o 4 6 a 10 12 14 16 la 20 EMITTER CURRENT 1Ie:)-mA

9lCS-42303

Fig. 4-Typical static emitter characteristics .

'~ .... AMBIENT TjMPERATUiE ITA)o 2SoC

• \. .........

• ... ~ I 2 .. ~ !;; 1

'" • iii • ::> 0 ... • z 0 .. " 2 ... '" ..

0.1

I\.. ......... sJ

2

'" r"~t. ""'-

.....

t'-. ....... '" .~

............

• • • 2 10

INTERBASE VOLTAGE IVBB)-V 92C5-4256t

Fig. 6 - Typical peak point current characteristics.

104

4

au 0 AMBI NT TEMP~RAT~RE (TA)025°C 4S - -~1 > I~

1 40 ~

-= 1 .,l,/ If" >35

I Ij '" ..,t If"_ .. Olf" CO -~ I V ., .'-. ",,,, gzs

/ /"'''' ~ >-~20 .ff> .. / v/ ~v"'~ ::> <II IS ...

10 I ~ ~ ~ <II ... ID

j ~ ~ ~ '" '" ... !O ~ ~ i""'"

o 4 6 a 10 12 14 16 18 20 BASE 2 CURRENT (IaaJ- mA 92CS-42306

Fig. 5 - Typical static interlJase characteristics

,0

.1 CEJ,\£ J-+-I-11., "" I 90~"~~ 'MAX I V 2 -_/ • 2N2647 !j,o·'

,/' ~,~ i3 ~\9-+/ ~tO.3 ~i;

~4 /'" ~ ;: ,-' ~t()'"5

10-.

- - - -80 60 40 20 0 20 40 60 80 100 120 '40 AMBIENT TEMPERATURE ITA 1- °C

92CS-42582

Fig. 7- Typical emitter reverse current characteristics.

______________________ Unilunction Transistors and Switches

2N2646, 2N2647, GES2646, GES2647

I.

.~ ~ 90 TH PERCEiT! LE .. 4 f AMBIENT TEMPERATURE (TA)-2S0C ~

rh • BASE 1 CURRENT (IBII-O -~o-I .... . ffi • 0: 0: 4 :J <.> .. • 0: ... ~- MEDIAN 0: •

ffi • .....-I:: 4 i ...

• 10-3

o w w ~ ~ ~ ~ ro ~ 90 ~ EMITTER BASE 2 REVERSE VOLTAGE (VB2E I-V

92CS-42!l183

Fig. 8 - Typical emitter 19verse cur19nt characteristics.

" E I

~ .... z ... 0: 0: :J <.>

... III

" .. 0: ... .... ~

7 \ 6

Qo/ ~. 5 ",,-"" Qo/, ;.... to"" fo~/ ..,.... 4r--- I-",,,,O~;' Y ... .too--q:./ q.. ...... 9- "'Ii-. ~ ......... 3 V/:,o 2

V 1); r o 10 20 30 40 50 60 ro 80 90

INTERBASE SUPPLY VOLTAGE (Vas) xNORMALIZED INTERBASE RESISTANCE (KRI- V

92I:S .... 25 ...

Fig. 10- Typical interbase characteristics. Interbase characteristics at any junction temperature may be determined by dividing the horizontal scale by K", see Fig. 11.

2,4 AMBIENT TEMPERATURE (TA)=2S"C 2.2 EMITTER CURRENT (IE)=Sl mA

2 1 I,. ~~~ ~ ~ 1.8

1 ,'i>oQ'

ffi 1.6 !~~\)i-V

.... ~'i>~~ ... '" 1.4

,,0 " 0:

V:ORMALIZEdvEB ( •• 11 V. ,vBB-if 1.2

" '/ ::: 1

/ :; « 0.8

V '" ~ 0.6 z J 0.4

/ 0.2

0 o 10 15 20 25 30 35 40

INTERBASE SUPPLY VOLTAGE (V8BI-V

9ZCS-42565

Fig. 12-Normalized bese-2 cUfl9nt and base-l saturation voltaga characteristics.

1.6

1.4

"' " lORMA1UZED 1 IB2 (IMOOI ~. TEJP

0: 1.2 I I I I ... "- .. l II I .... ...

'" ~NORMALIZEO VESI (sat) Vs TEMP

" 0: 1 : f"... " i'-.. ... ~ 0.8 ..J -t--" :& 0: 0 Z 0.6

- - -75 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (TAI-"C

92CS-42584

Fig. 9-Normalized base-2 current and base-l saturation voltage characteristic.

_ 2.2 BASE SUPPLY VOLTAGE (VBBI'3V !. 2 EMITTER CURRENT (IE)=O

... <.> z 1.8 ;! III en 1.6 ... 0: ... III 1.4 " / .. .. ...

1.2 ....

/ ~ Q 1 ... V N :; 0.8 " / '" ./ 0: 0 0.6 z ~

0.4

1/ /

-75 -SO -25 0 25 50 75 100 125 150 JUNCTION TEMPERATION (TJ)-OC

92CS-42310

Fig. 11-Normalized interbase 19sistance characteristic.

1·04 AMBIENT TEMPERTURE (TA );;25°C

OJ 1/ ~ 1.03 ;:! III

en ~ '.02 ... III

" .. ffi t.01 .... ~

" ... N

1

:;

" 2 ~O.99 z

o

/ /

V V

1/ /'

1/ /"

2345678 INTERBASE SUPPLY VOLTAGE (VBBI-V

92CS-42:566

Fig. 13 - Normalized interbase resistance characteristic.

10

105

D

Unijunctlon Transistors and Switches _____________________ _

2N2646, 2N2647, GES2646, GES2647

16

14

.. E t2 I

~f.ll~ d' to I-

~~ _Jf.ll\~l1 z .. ,~ 0: 8 ~,,""\. f:>.~ 0:

:Ll-" "-z; :.---<..> /1 \~\> .......... I- 6 z "v-f. -0 L--)'--:Vf.V-\>~ i.,·c i-"'"'" _r-.. >- 4 ~f.'" ,.\ :,...-.. Va"~7~ ..J ~ ..J '" ", ;l 2

0 rr o 5 10 t5 20 25 30 35

INTERBASE SUPPLY VOLTAGE (V8B)-V 92CS-425H

Fig. 14 - valley pOint current vs. base voltage, for 2N2646 only.

BASE SUPPLY VOLTAGE (Vse) .. 20V

3

> \ \ I

\ Ii. "-... 2: ...... '" 2 --rrr-c

:~ i:! -:; .. ............ ... TRIGGER AT tMITTiR " r--.. '" I U) ..J

" .. 0

0.2 0.4 0.6 0.8 1.2 t.4 1.6 !-8 TRIGGER PULSE WIDTH-poS

92C5-42577

Fig. 16-Minimum trigger pulse amplitude vs. trigger pulse width for turn-on of unijunction transistor

<.

'" 2 '" ~ ..J 0

1.8

> .. I . U)

..J t" " .. ,. .. 1.2

'" .. - t .. / U) 0.8 .. ..

!/ c 0.6 .. V !:! ..J 0.4

./ .. " 0.2 0: 0 Z 0

'" '" ~

1.4 BASE SUPPLY VOLTAGE (.VB8)'6VTO 20V 90% LIMITS

g 1.2

'" 0.81---1--+-+-+--+--1--' i c

'" N :::; 0.61---1--+-+-+--+--1---1--+---1 .. " 0:

~

-75 -50 -25 o 50 75 tOO t25 150

AMBIENT TEMPERATURE (TA)_ac 92C9-42578

Fig. 15-Normalized base 1 peak-pulse voltage vs. ambient temperature.

:/

'" 2 BASE 1 SUPPLY VOLTAGE (VBS)-6V TO 20V J..J.

~ '" t.8

~ RBI·5~ g 1.6 ,..-'" It 11. ~ 1.4

/ ~ " / .. ,. L2 g[[t ~ ,/ /' .. t

i V / ~.5n '" i-' :l 0.8

V V' V ".., CD

o 0.6

...... ,v /' I:l !/ ~ ~ 0.4

" ",/ ...... V ~ 0.2 I,.,.,,:: ~~ i'"

2 ••• O.Oot O.Ot

r:: 2 ••• 2 .. 68 t 2 " 6 ·1 b 0.1

CAPACITANCE (CI)-,.F 92C5-42581

Fig. 17-Normalized base 1 peak pulse voltage vs. capaCitance.

/ /

V

o 10 15 20 25 30 35 40 INTER8ASE VOLTAGE (VBB)-V

Fig. 18-Normalizedbase 1 peak pulse voltage vs. interbasevoltsge.

106


> .!.. ~ !oJ

'" >! -' §! >--' .. .. :J

"' '" :J

'!! z i

> 1 >" -!oJ co .. ~ 0 > ~ 8: :J .. '" :J

'" i i

2N2646, 2N2647, GES2646, GES2647

3.

\ 1\ 32

1\ \ 28

\1\ 241\ 1\'\ r\ 20 \

i\ t": K I. f- "" 'r--, .......... ~ :::: I--

12 --r-E--8

4

AMBIENT TEMPERATURE RANGE (T A)= -55"C TO 125D C

2 4 6 • 2 4 6. , 4 6 • 0.01 0.1 I

CAPACITANCE (CX)-II-F 92CS-42573

Fig. 19 - Minimum supply voltage characteristics. See Fig. 20 for circuit and curve data.

36 \ \ 32

~ 28

\ 24

\l\ 20

\1\r'\A 16

r\~ ~O7 12 C, ~ ....... 8

4

AMBIENT TEMPERATURE RANGE (T,,)--40-C TO 12!5-C

2 • • • 2 ••• I 2 • O.ot 0.1 1 CAPACITANCE- (Cr)- ~F

92C$-42574

Fig. 21-Minimum supply voltage characteristics. See Fig. 22 for circuit and curve data.


TO-92 Lead 1 - Emitter Lead 2 - Base 1 Lead 3 - Base 2

••

10

10

CURVE ICR TYPE

• c C3I

• cas,CIII

• C10,C11 C10C11

C CIS,CR

0 C10,e11

HOTE: C3I-2NII1-'2 CII-.1142-50 C1G-2N1770A-77A C11-2N1770-71

"., 270±1K 47n±101f1 21n±1K 410±1ft

SPRAQUE 11Z12 PULSE TRANS.

AC

DC

YI(MAX) 35Y lOY UY 11.

~ 35Y

92CS-42571

Fig. 20-Circuit for minimum supply voltage curves, Fig. 19.

CURVE ICRTYPE "., • CIO 2N2OU-30 27n±ffi

-+- CI2(2N17tZ .... ) 470±101f1 eSO(2N1101-11) PULSE C4IAND C4I TRANS. IC30,40,50 AND PE2231 '.IERIES

,----.--O+Y, -, 10' -.,

100n

V (MAX 35Y ,.. 35.

AC

DC

Fig. 22 - Circuit for minimum supply voltage curves, Fig. 21.


TO-18 Lead 1 - Emitter Lead 2 - Base 1 Lead 4 - Base 2

107

UniJunction Transistors and Switches _____________________ _

2N4870, 2N4871, GET4870, GET4871

Silicon Unijunction Transistors

If TO-92 TO-18

The GE/RCA 2N4870, 2N4871 , and GET4870, GET4871 are unijunction silicon transistors intended for general-purpose industrial applications where circuit economy is of primary importance. The 2N4870, 1 and GET4870, 1 are ideal for use in firing circuits for silicon controlled rectifiers, timing


circuits, relaxation oscillators and other typical unijunction transistor applications. These unijunction transistors are supplied in JEDEC 10-92 package (2N4870, 2N4871) and in JEDEC 10-18 package (GET4870, GET4871).

EMITTER REVERSE VOLTAGE ...................................................................................... 30 V INTERBASE VOLTAGE ............................................................................................. 35 V RMS EMITTER CURRENT ..•..................................................•................................... 50 rnA PEAK EMITTER CURRANT (Note 1) .................................................................................. 1.5 A POWER DISSIPATION (Note 2) ................................•................................................... 300 mW OPERATING TEMPERATURE RANGE ...................................................................... - 65" to + 12S"C SlORAGE TEMPERATURE RANGE ........................................................................ - 65" to + 1SO"C

NOTES: 1. Dutycycle .. 1%PRR=10PPS.

2. Derate 3 mW/"C increase in ambient temperature. The total power dissipation (available power to Emitter and Base-Two) must be limited by the external circuitry.

'a2 -f

Vaa

I 92CS-42400

lit r----.... --Q+20y ;t O.5V

j~ Voal

"11 zon ±1'IIo

-= 92C$-42599

Fig. 1-Unijunction tnrnsislorsymbol Fig. 2-Typ/calbase-1 peak-pulse and nomenclBlure used for voltage circuit. current and voltage circuit.

108

EMITTER VOLTAGE

VE

RESISTANCE --'- SATURATION ---REGION I REGION

I - PEAK POINT I

I I I EMITTER-TO-BA8E

ONE-DIODE CHARACTERISTI~

VALLEY POINT ~

I EMITTER I CURRENT

-+~-----r---~5~0~M~A~-IE

EO

Fig. 3-Static emlttercharecteristics waveforms.

File Number 1949

-----------____________ Unijunction Transistors and Switches

2N4870, 2N4871, GET4870, GET4871

ELECTRICAL CHARACTERISTICS, At Ambient Tempereture (T A) = 2S"C Unless Otherwise Specified

LIMITS

CHARACTERISTICS SYMBOL 2N4870 2N4871 UNITS


Intrinsic Standoff Ratio (VBB = 10 V)(Note 1) ~ 0.56 - 0.75 0.7 - 0.85 -Interbase Resistance (VRR = 3 V.IF = 0) RBBa 4 6 9.1 4 6 9.1 kQ

Emitter Saturation Voltage (VBB = 10 V, IE = 50 mAl VE(sat) - 2.5 - - 2.5 - V

Modulated Interbase Current (VBB = 10V, IE = 50 mA IB2(mod) - 2.2 - - 2.7 - mA

Emitter Reverse Current (VB2 = 30 V, IBI = 0) lEO - 0.05 1 - 0.05 1 ~A

Peak Point Emitter Current (VBB = 25 V) Ip - 1 5 - 1 5

Valley Point Current (VRB = 20 V, RR? = 100Q) Iv 2 5 - 4 7 - mA

Base-One Peak Pulse Voltage (Note 2)(Fig. 2) VOB1 3 6 - 5 8 - V

NOTES:

1. The intrinsic standoff ratio, ry, is essentially constant with temperature and interbase voltage.

ry is defined by the equation:

VP=ryVBB+VO Where Vp = Peat Point Emitter Voltage

V BB = I nterbase Voltage

Vo = Junction diode Drop (Approx. 0.5 V)

2. The Base-! Peak Pulse Vo~age is measured in the circuit below. This specification is used to ensure a minimum pulse amplitude for

applications in SCR firing circuits and other types of pulse circuits.

20 AMBIENT TEMPERATU~E (TA I=Z5°C

> lB'~-+---+--~--+---~~---+--~--~~ I

ffi 16'~-+---+--~--+---~~~-+---r--~--4 > ~ 14'l--+---+--~--+---~~r--+---r--~--4

'" ~ 12K--+---r--4---+-~r--+---+--4---+---4 o > ~ 10~-+---r--4---+---~-+---+--~--+---4 < .. BIH--+---r--4---+---~-+---+--~--+---4 o VBB'"30V

';" 61tt-+f--r--4---+---~-+---+--~--4---4

~ 4 fu/::B:.~~~+---+-=--+--+--~--t---~~ ! ~';VBri-5V IB2iO

2 '.:

o 4 6 B 10 12 14 16 lB 20 EMITTER CURRENT (I£I-mA

92C$-42303

Fig. 4 - Typical static emitter characteristics.

10,

6

• < e

!a. 2 ... -.... 1 z "' • II: II: 6 ::> u .... z 4

0 .. "" 2 < "' ..

AMB I ENT TEMPERATURE (TAl- 25"(;

"\

~ " "" MEDIAN

...... ........

~

• • 8 2 10

BASE SUPPLY VOLTAGE (VBB I-V

2

92CS ..... 2308

Fig. 6 - Typical peak point current characteristic.

•

,v 0 AMBIENT TEMPEtATUfE (TAI-25'C

45 - -~) 1;,/ > I 40

Ii> I /1 ~\> ID > 35

I 7~ "' / ~r"-~ 3

/ I--.... • A,'" ....

0 25 /A,'" lI' > / ~ 20 <f'~ ..

I // ~~A,~ .. ::> en 15

"' 10 I ~ h {/' en

< .. 5 1 / ~ 0 ~ II:

"' .... '!" ~ ~ t1'

o 4 6 B 10 12 14 16 18 20 BASE 2 CURRENT (IB2)- rnA 92CS-4Z 306

Fig. 5-Typical static interbase characteristics.

16

14 < E ,

12 "> ... r,'''' - MEDIAN ,'!i .... 10 \~~'.~ z

L "' II: II:

8 ::> ~."'-u /MEV-

..-:::::;,'1: .... ./ \~~\' I z i5 6 ..

V/ ~EO~ -d.\'l.!>oC 1;;

4 ./ \1~ ....

~ / .....-.J < >

2

I v:- I I I 1 I o 5 10 15 20 25 30 35

INTERBASE SUPPLY VOLTAGE (VBBI-V 92CS-42309

Fig. 7- Typical valley point current characteristic.

109

10" Ii. "

Unijunction Transistors and Switches ______________________ _

2N4870, 2N4871, GET4870, GET4871

110

_ 2.1t aASE SUPPLY VOLTAGE (Vaa)'3V 0: EMITTER CURRENT (rE)'o '" 2 -...

<.> z l.a j!!

\/ '" in 1.6 ... \/ 0: ...

'" 1.4 .. V ..

0: ... 1.2 >-

1/ !: Q 1 ... V N

~ 0.8 ,. V 0: L. ~ 0.6 --0.4 - - -15 50 2~ 0 25 50 75 100 125 150

JUNCTION TEMPERATION (TJ)-'C 92C5-42310

Fig. 8 - Normalized interoase rssistance characteristic.

TERMINAL CONNECTIONS TO-92

Lead 1 - Emiller Lead 2 - Base 1 Lead 3 - Base 2

TERMINAL CONNECTIONS TO-18

Lead 1 - Emiller Lead 2 - Base 1 Lead 4 - Base 2


2N4991, 2N4992

Silicon Bilateral Switch

I TO·98

The GE/RCA 2N4991. 2N4992 S6Ss are planar monolithic silicon integrated circuits having the electrical characteristics of a bilateral thyristor. The device is designed to switch at 8V with a O.02%I·C temperature coefficient and excellently matched characteristics in both directions. A gate lead is provided to eliminate rate effect and to obtain trigggering at lower voltages.


The silicon bilateral switches are specifically designed and characterized for applications where stability of switching voltage over a wide temperature range and well matched bilateral characteristics are an asset. They are ideally suited for half wave and full wave triggering in low voltage SCR and Triac phase control circuits. These types are supplied in JEDEC TO·98 package


PEAK RECURRENT FORWARD CURRENT(1% duty cycle. 10 "s pulse width • TA = 100·C) ...................................... 1 A PEAK NON·RECURRENT FORWARD CURRENT (1 0 lAs pulse width) ......................................................... 5 A DC FORWARD ANODE CURRENT (Note 1) .......................................................................... 175 rnA DC GATE CURRENT (Notes 1 and 2) .................................................................................. 5 rnA POWER DISSIPATION (Note 1) .................................................................................... 300 mW OPERATING JUNCTION TEMPERATURE RANGE ............................................................ - 55· to + 125·C STORAGE TEMPERATURE RANGE ........................................................................ - 65· to + 150·C

NOTES: 1. Derate linearly to zero at 125·C. 2. This ratin9 applicable only in OFF state.

Maximum gate current in conducting state limited by maximum power rating.


Lead 1 • Anode 1 Lead 2· Gate Lead 3 - Anode 2

File Number 2048

111

..

Unijunction Transistors and Switches _____________________ _

2N4991, 2N4992



Forward Voltage Drop (on state)(IF = 175 mAl VF Switching Voltage Vs

Forward Current (off state)

(VF = 5V, T A = 25°C) Ie

(VF = 5V, TA = 85°C Ie Switching Current Is Absolute Switching Voltage Difference IVs2-vs11

Absolute Switching Current Difference \lS2- ISll Holding Current IH Forward Gate Current to Trigger

(VF = 5V., RL = lkQ) IGF Temperature Coefficient of Switching Voltage

(TA = -55°Cto +85°C Te Turn-on Time (See Circuit 10) Ion Turn-off Time (See Circuit 11) toll Peak Pulse Voltage (See Circuit 12) Va

NOTES:

1. This device is a symmetrical negative resistance diode. All electrical

limits shown apply in either direction of current flow.

-v

Fig. 1-Static charactaristics waveform.

90

800

1\ ...... r- 1:4.700

\ %~ !:! ~600

I'{H ...... zz ~ ~ 500

\ 0:0: ::>::> u u400

.. " ",'" zZ Q ~ 300 ....... " S~ % ~ 200

~ co """-r--- ---'-100 I---

-75 -50 -25 a 25 50 75 100 125 150 AMBIENT TEMPERATURE ITAI-oc

92e5 -42299

Fig. 3-Typical holding and switching current characteristics.

112

LIMITS

2N4991 2N4992 UNITS


- - 1.7 - - 1.7

6 - 10 7.5 - 9 V

- - 1 - - 0.1

- - 10 - - 10 ~A

- - 500 - - 120

- - 0.5 - - 0.2 V

- - 100 - - 10 ~A

- - 1.5 - - 0.5 mA

- - - - - 100 ~

- to.02 - - to.05 - %/OC

- - 1 - - 1 ~s - - 30 - - 30

3.5 - - 3.5 - - v

'0 /' 9.8

9.2 /' > /'''' I "01.' ........ ..v /' ~ ~ 8.4

/' ~ .. V ~ "..:J ... I ~ ...

0 /' " ....... ./ > ... ~' C) 1 .• ~'\/ z /' r;j,0

~ 7.2 ... /

~ .. ~ /"" ~8.8

/" 8.4

6 /' - --0.03 0.02 0.01 a Q.01 0.02 0.03 0.04

TEMPERATURE COEFFICIENTITc 1-'lC.OC 921;5-42298

Fig. 2 - Typical switching volte.ge characteristics.

'.3 J

> 1/ I

t '.2 .. 0 0: C

'" ... '" V ... !:i 0 • >

V c 0: ...

0.9 ~ ,/ 0: 0 ...

0.8

0·7 2 • • • 2 • •• 2 • •• .0 100 1000

ANODE CURRENT 1:t,01-mA 92C5-42300

Fig. 4 - Typical forward voltage drop characteristic.


t-> 1.6

1 t-... > 1.4 -.. l-0

'" 1.2 " ... ~ t-~ I 0 > -" a::: 0.8

'" ;0 0: -0 u. 0.6

-0.4

-

1 XA -200 mA

i _~00m4

r--- ---t-- ..IA,=SOm<4,

r-- ---r-- -r-- ~"Om4-r--t--r--

-50 25 0 25 50 7!l 100 125 150 175 AMBIENT TEMPERATURE (TAI'C

92CS-42501

2N4991, 2N4992

500 1A -100 rnA

#40 I ...

::> ..1300 '!! 1/ ~ .. N200

V ,. 0 II! ...

./ t: I % V .. I- ./ z

0 "' I-' u ~ 0:

~ "' .. -100 -50 -25 0 +25 +50 +75 +100 +125 +150 "175

AMBIENT TEMPERATURE(TAI-'C 92CS-42290

Fig. 5-Typicalforward voltage drop characteristic. Fig. 6 - Typical tum-off time shift characteristic.

15 AMBIENT TEMPERATURE (TAI'25"C l00! • VAIA2"5V

14

V"- i--'"'" 13 /"

~ V ".,

I .. ... 12 P ,/ -

4

/ ~ 2

/ J ~ lOa

;: • / z "' 2 0: / 0: ::> I u ... II ,.

V i= / ... ... 10

0 V I Z

'" 4 / '" / " " 2 '" '" ./ .J O.,.

• 0: 9 ::> • I-

2 0.01

10 20 30 40 50 60 70 80 90 100 11C ANODE CURRENT (TA)-mA 92CS-42291

- 50 0 + 50 +100. +150. +200 AMBIENT TEMPATURE(TA l-"C

92CS-42292

Fig. 7 - Typical tum-off time characteristic. Fig. 8- Typicalleakage current characteristic.

10

-8

> .!. R-soon

-.::0 -~ ? 0.0 1\

"' ~I\- -'" 6 1-".50. --~ ~ J"20~ ..I 0 V~ 1-- -- --> ... ./ I-..

V ..I ::>

,....1--.. I-~ " '" 2V ... .. I--

468 468 468 0.01 0.1 I 10

CAPACITANCE (Cl-"F •• es-.....

Fig. 9- Typical peak pulse voltage characteristics. (Sse circuit, Fig. 12)

113

Unijunction Transistors and Switches _____________________ _

2N4991, 2N4992

TEST CIRCUITS

.. MERCURY RELAY ..

~ Vs 0 >

SIS .. 0 0 z ..

,2CS-42!55

Fig. 10-Turn""" time test circuit and waveform.

15 V ---rlUIN r-1 ~L-o fOmS

10k

MERCURY RELAY

SIS

TURN OFF TEST; R1-Rz-soon C, ADJUSTED TO POINT WHERE TURN- OFF JUST OCCURS

tofl~ (R,+ R2)Cl

92C$-423S6

Fig. 11-Turn-{)ff time test circuit.

~ T

20Sl

92CS-42357

Fig. 12 - Peak pulse voltage test circuit and waveforms. (SeeRg.9forcurve)

APPLICATION IN HYSTERESIS-FREE PHASE CONTROL CIRCUIT

The circuit in Figure 13 is a simple hysteresis-free phase control circuit intended for lamp dimming and similar applications. The circuit requires only one RC phase lag network. To avoid the hysteresis (or "snap-on") effect, the capacitor, C, is reset to approximately 0 volts at the end of every positive half cycle (for pot values such that no power is applied to the load). This is accomplished using the gate lead. At the end of the positive half, as the line voltage drops below the capacitor voltage, gate current flows from C out through the gate, 01 and 47kQ resistor. The SSS fires and discharges C to 0 volts. In the negative half cycle

sas 2N4992 Dl, D2 - DIODE

92tS-4U5.

Fig. 13-Typical phase-control circuit for lamp dimming and similar applications.

114

diodes 02 and 01 clamp the gate voltage to ground and block the flow of gate current respectively. Electrical requirements of 01 and 02 are easily met. Any diode with VR>10 volts works fine. Forward conductance must be fairly good since the voltage across 02 at 3mA must be smaller than the drop across the Triac gate, the SSS gate, and 01 at the trigger current of the SSS.

Figure 14 shows the excellent degree of phase control available in the circuit. For the worst case unit, ",max = 1550 (Vs = 7.5 volts,ls = 120"A) .

.. 0.5 i"

INITIAL CAPACITOR VOLTAGE (GOING INTO HALF CYCLE), Vc (O)""'V ASSUMED

~ -0~~---4----_+----_+----~----4_--__4 !;; .. II: II:

~ 0.3i~--~I-+~~-----+-----+.V::-"--:,::,5'"'1l:::"'O"C-----l w C.~22~F

~ vc·(O)·-1

';" 0.2. ~----if-------4~--"1~,-----+----_+-----l

~ .. ~ 0.1 ~----l-----4-----+----'" .... --~-----1 .. -J C :: 0

130 140 150 160 FIRING ANGLE -DEGREES

tlCS-4net

Fig. 14 - Typical gate-trigger CUfl'9nt characteristic.

180


2N4987, 2N4988, 2N4989, 2N4990

Silicon Unilateral Switch

Applications: • SCR Triggers • Frequency Drivers • Ring Counters • Cross Point Switching • Over-Voltage Sensors

TO-98

The GE/RCA 2N4987-90 SUSs are planar monolithic silicon integrated circuits having thyristor electrical characteristics closely approximating those of an "ideal" four layer diode. The device is designed to switch at 8 V with a O.02%/OC temperature coefficient. A gate lead is provided to eliminate rate effect, obtain trigggering information at lower voltages


and to obtain transient free wave forms.

Silicon Unilateral Switches are specifically designed and characterized for use in monostable and bistable applications where low cost is of prime importance. These types are supplied in JEDEC TO-98 package.


PEAK REVERSE VOLTAGE .......................................................................................... 30 V PEAK RECURRENT FORWARD CURRENT(1% duty cycle, 10~spulsewidth, TA = 100°C) ....................................... 1 A PEAK NON-RECURRENT FORWARD CURRENT (1 O~s pulse width) .......................................................... 5 A DC FORWARD ANODE CURRENT (Note 1) .......................................................................... 175 mA DC GATE CURRENT (Notes 1 and 2) .................................................................................. 5 mA POWER DISSIPATION (Note 1) .................................................................................... 300 mW JUNCTION TEMPERATURE RANGE ....................................................................... - 65° to + 125°C STORAGE TEMPERATURE RANGE ........................................................................ - 65° to + 150°C

NOTES: 1. Derate linearly to zero at 125°C. 2. This rating applicable only in OFF state.

Maximum gate current in conducting state limited by maximum power rating.

File Number 2049

115

Unijunctlon Transistors and Switches _____________________ _

2N4987,2N4988,2N4989,2N4990

ELECTRICAL CHARACTERISTICS. At Ambient Temperature IT IV = 2S·C Unless Otherwise Specified

CHARACTERISTICS SYMBOL 2N4987

MIN. TYP.

Forward Voltage Drop (on state) (IF = 175mA) VF - -

Forward Switching Voltage Vs 6 -Forward Current (off state)

(VF = 5V, TA = 25·C) 18 - -(VF = 5V, TA = l00·C 18 - -

Forward Switching Current Is - -Reverse Current

(VR= -30V, TA = 25·C IR - -(VR= -30V,TA = 100·C IR - -

Holding Current IH - -Temperature Coefficient 01 Switching

Voltage (T A = - 55·C to + 100·C) Tc - ±O.O

Turn-on Time (See Circuit 10) ton - -Turn-off Time (See Circuit 12) toff - -Peak Pulse Voltage (See Circuit 14) Vo 3.5 -Capacitance (OV., 1 = 1 MHz) C - 2.5

I

~ V IB S

92CS-42316

Fig. I-Static characteristics waveform.

,4uu

'200

,," .... ..1..'..'000

~ >"' ~!:! ........ 800 ZZ

'" ...... Iv "'''' ~~ 600 uu

'" ,. .. r--... ~~ 400 .oJ: ...... r-~ -......

'""-... "u »- r-. r-.. i 200 -"' -r--

116

0 -eo -25 0 5 50 75 '00 ,25

AMIBIENT TEMPERATURE (TA)-' C t2CS-42l28

150

Fig. 3 - Typical valley and switching current characteristics.

MAX.

1.5

10

0.1

10

500

0.1

10

1.5

1

25

--

LIMITS

2N4988 2N4989 2N4990 UNITS

MIN. TYP. MAX MIN. TYP. MAX MIN. TYP. MAX

- - 1.5 - - 1.5 - - 1.5

7.5 - 9 7.5 - 8.2 7 - 9 V

- - 0.1 - - 0.1 - - 0.1

- - 10 - - 10 - - 10 "A

- - 150 - - 300 - - 200 mA

- - 0.1 - - 0.1 - - 0.1

- - 10 - - 10 - - 10 ,..A

- - 0.5 - - 1 - - 0.75 mA

±0.05 ±O.O ±0.02 %I·C

- - 1 - - 1 - - 1

- - 25 - - 25 - - 25 "s

3.5 - - - - - - - - V

- 2.5 - - 2.5 - - 2.5 - pF

'0.4

,0 ,/

9.6 V >

.!.. 9.2

V '! 8.8 .L ... V.;,t.'i> ./ '" ", .. " ~ 8~ V .... ~\<i .. ' /' g 8

'" 7.6 V ~<I ./

z V ~ .. oI' ././ i

~ I2 ./' /./ i

en 6.8 V ./ 6.4

/V 6 - - -0.03 0.02 0.01 0 0.01 0.02 0.03 0·04 TEMPERATURE COEFFICIENTlTC)- %I'C

92CS-42311

Fig. 2 - Typical switching voltage characteristics.

1.3

1.2 > / .!.. .. > 1.'

1I ii: 0

'" V Q ... 1

V '" " I-

/ .oJ 0 > 0.9 Q / '" ~ -f 0.8 ~

0.7 2 4 •• 2 4 •• 2 4 •• 10 '00 1000

ANODE CURRENT (IA) - mA 92CS-42312

Fig. 4 - Typical forward voltage drop characteristfc.


,. t6

> I

Ii:. 1.4 ~ .. 0 0: t2 c ... '" " !:i 1 g ~ 0.8 ; 0:

~ 0.6

0.4

r--I- IA-200mA

r-- I~"OoI"'A t--I--r--. r--r-- --- IA'50"'A t-- t--

I--I-- "A·lo --~ --

-50 -25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (TA I-"C

92CS-'U313

2N4987, 2N4988, 2N4989, 2N4990

iOOO. 4

...... cC

100 I I • iii:: 4 "a: -H .... -z .... ... z 10 a: ... • a: 0:

4 :::>a: u:::> ... u ",,,,

=: ~: ..J..J

0 ... 0.1 a: en • "a:

~ ... 4 a:> 0'" ... a:

0.01

175 L---~~-'-----~5~O.---~0.---'50t..---t.,O"O.---,~5~O--~200

AMBIENT TEMPERATURE (TA)--C 92C5- 42314

Fig. 5 - Typical forward voltage drop characteristics. Fig. 6 - Typical forward and reverse leakage current characteristics.

3.5

;, 3

I

~ 2.5 ... '" ;:: ... 2 ... 0 I

Z 0: 1.5 :::> ..

o

V

./ VV

V V

../ V

10 20 30 40 50 60 70 ANOOE CURRENT (IA)-mA

eo 90 100

92C5- 42321

';. , ~ ... '" ;:: ... ... 0 I

Z a: :::> ....

24

20

16 / t:6 .. ~V 12

'~ V ~ ~O'bf/: 8

~ V V ~ b::::: V 4 .....

~t::--V 0 -75 -50 -25 o 25 50 75 100 125 150

ANOOE CURRENT (tA l-mA 92C$-42322

Fig. 7-Typical turn-off time characteristics. Fig. 8 - Typical turn-off time characteristios.

U500l 10

V R"'loon >

/ II I I 1 R·50n 0 8

II / > := r-' -... - I-'" 6- -~ - -..J - - .-0 > 1\ ... 4

),'20n en ..J 1\ :::> .. '" 2

R·5n ...

I ~

2 • • 2 • •• 2 4 6 0.01 0.1 ,

CAPAC ,TANCE (CI"F 92C$-42315

Fig. 9-Typical peak pulse voltage characteristics. (See circuit, Fig. 12)

10

175

117

__ I

~~

UnlJunctlon Transistors and Switches _____________________ _

2N4987 ,2N4988, 2N4989, 2N4990

118

DUT

92CS- 42319

Fig. 10- Turn-on time test circuit.

92C5-42317

Fig. 12 - Turn-off time test circuit.

15V-~ IOms

o MIN.

40n

DUT

Fig. 14 - Peak pulse voltage test circuit and waveforms.

(VF+o.1!VS- VF II

92CS-42!18

Fig. 11-Turn-on time test circuit (Fig. 10) waveform.

+

- t 9ZCS-42320

Fig. 13- Turn-offtimetestcircuit(Fig. 12)waveform.

______________________ Uriijunctlon Transistors and Switches

2N4987,2N4988,2N4989,2N4990

APPLICATIONS

Uses fewer components than transistor flip flops. Output at "8" gives transient free waveform.

Switching action of the 2N4990 allows smaller capacitors to be used while achieving reliable thyristor triggering.

Fig. 15 - Binary divider chain circuit.

100kO

-11--

92C5-42350

Fig. 16 - Motor speed control circuit.

SUS is used to generate a rapid rise or fall time by uSing energy stored in a capacitor.

+ 'Olin 1011.0.

+

INPUT + INPUT + PULSE 470 OUTPUT PULSE

470 OUTPUT PULSE PULSE

Cal POSITIVE OUTPUT Ib 1 NEGATIVE OUTPUT lOV INPUT TO

80TH CIRCUITS/

OV

OUTPUT OF CIRCUIT Cal ~, _____ _

OUTPUT OF CIRCUIT'" V lei TYPICAL WAVEFORMS 92CS-4UU

Fig. 17-Pulse sharpeners circuit.

r----.----------------------------~~-----------------+7V

3.3k

22k ~----------~ro

22k 390

92C5-42351

... CLEAR AND SET

2N4990 92CM-423S!

Fig. 18 - Ring counter for incandescent lamps circUits.

119

UniJunction Transistors and Switches _____________________ _

2N4987,2N4988,2N4989,2N4990

APPLICATIONS (Cont'd)

For overvoltages, SCR turns on and blows fuse. For rapidly rising voltages, circuit triggers between 13.2 & 14 volts. For slowly increasing voltages, circuit triggers between 14 & 17 volts.

12V

100il

92CS·42745

Fig. 19 - Overvo/tage protection circuit.

Spikes in center of sawtooth are eliminated in this circuit by triggering at gate.

2N4989 (SUS) 92CS-42147

Fig. 21 - Frequency divider circuit (with transient-free output).

120

Capacitor charges until switching voltage is reached. When SUS switches on, inductor causes current to ring. When current thru SUS drops below holding current, device turns off and cycle repeats.

+)5V

6.ekn

2N4gee

OUTPUT 47n

92CS-42746

Fig.20-10kHzoscillatorcircuit.

Sawtooth Output from each stage is one half frequency of preceding stage.

,----,.----.,------,------T·+20V IOOkA IOOkA 1OOkIl.

92CS-42148

Fig. 22 - Frequency divider chain circuit.


A

2N4987, 2N4988, 2N4989, 2N4990

92<:5-42410

Fig. 23 - Equivalent circuit.


Lead 1 - Anode Lead 2 - Gate Lead 3 - Cathode

A

.~ 92 cs - 42411

Fig. 24-CircuitSymbol.

___________________________________________________________________ 121

10

Unijunctlon Transistors and Switches _________________________ _

2N6027, 2N6028, GES6027, GES6028

Programmable Unijunction Transistor

Features: Applications:

II • Planar Passivated Structure • SCR Trigger • Low Leakage Current • Pulse and Timing • Low Peak Point Current Circuits • Low Forward Voltage • Oscillators • Fast, High Energy Trigger Pulse • Sensing Circuits • Programmable '1 • Programmable RBB

TO·92 To-98 • Programmable Ip • Programmable Iv • Low Cost

The GE/RCA 2N6027, 2N6028 and GES6027, GES6028 PUTS are PNP three-terminal planar passivated devices available in the standard plastic TO-98 and TO·92 packages. The terminals are designated as anode, anode gate and cathode.

The devices have been characterized as Programmable Uni· junction Transistors (PUT), offering many advantages over conventional unijunction transistors. The designer can select R, and R2 to program unijunction characteristics such as '1, RBB, Ip and Iv to meet his particular needs.

PUTs are specifically characterized for long interval timers and other applications requiring low leakage and low peak point current. PUTs similar types have been characterized for general use wheren the low peak point current of the 2N6028 and others is not essential. Applications of the PUT include timers, high gain phase control circuits and relaxation oscillators.

Operation of the PUT as a unijunction is easily understood. Figure 1(a) shows a basic unijunction circuit. Figure 2(a) shows identically the same circuit except that the unijunction transistor is replaced by the PUT plus resistors R, and R2. Comparing the equivalent circuits of Figure 1(b) and 2(b), it is seen that both circuits have a diode connected to a voltage divider. When this diode becomes forward biased in the uni-

• Sweep Circuits

junction transistor, R, becomes strongly modulated to a lower resistance value. This generates a negative resistance characteristic between the emitter E and base one (B,. For the PUT, the resistors R, and R2 control the voltage at which the diode (anode to gate) becomes forward biased. After the diode conducts, the regeneration inherent in a PNPN device causes the PUT to switch on. This generates a negative resistance characteristic from anode to cathode (Figure 2(b) Simulating the modulation of R, for a conventional unijunction.

Resistors RB2 and RB, (Figure 1 (all are generally unnecessary when the PUT replaces a conventional UJT. This is illustrated in Figure 2(c). Resistor RB, is often used to bypass the interbase current of the unijunction which would otherwise trigger the SCA. Since R, in the case of the PUT, can be returned directly to ground there is not current to bypass at the SCR gate. Resistor RB2 is used for temperature compensation and for limiting the dissipation in the UJT during capacitor discharge. Since R2 (Figure 2) is not modulated, RB2 can be absorbed into it.

These types are supplied in JEDEC TO-92 package (GES6027, GES6028) and in JEDEC TO-98 package (2N6027,2N6028).


File Number 2050 122 ______________________________________________________________ __


2N6027, 2N6028, GES6027, GES6028


GATE-CATHODE FORWARD VOLTAGE' .............................................................. . GATE-CATHODE REVERSE VOLTAGE' .............................................................. . GATE-ANODE REVERSE VOLTAGE' ................................................................ . ANODE-CATHODE VOLTAGE' ...................................................................... . DC ANODE CURRENT' (Note 1) ..................................................................... ' PEAKANODE,RECURRENTFORWARD

(1 OO~s pulse width, 1 % duty cycle) ................................................................. . (20~ pulse width, 1 % duty cycle)' ................................................................. .

PEAK ANODE, NON-RECURRENT FORWARD (1 O~sec) ................................................. . GATE CURRENT' ............................................................................... .. CAPACITIVE DISCHARGE ENERGY (Note 2) .......................................................... . DISSIPATION (Total Average Power)(Note 1) ........................................................... . OPERATING AMBIENT TEMPERATURE RANGE (Note 1) ................................................ .

, In accordance with JEDEC registration data format. NOTES: 1. Derate currents and powers 1 %I·C above 25·C. 2. E = 1/2 CV2 capacitor discharge energy with no current limiting


LIMITS

CHARACTERISTICS SYMBOL 2N6027 2N6028 GES6027 GES6028

MIN. MAX. MIN. MAX

Forward Voltage' (IF = SOmA) VF - 1.5 - 1.5

Pulse Output Voltage' Va 6 - 6 -Offset Voltage' (V S = 10 V) VT

RG = MQ 0.2 1.6 0.2 1.6

RG = 10kQ 0.2 0.6 0.2 0.6

PeakCurrent'(Vs = 10V) Ip RG = 1 MQ - 2 - 0.15

RG = 10kQ - 5 - 1

Valley Current' (VS = 10V) Iv RG=IM2 - 50 - 25

RG = 10kQ 70 - 25 -Rr. = 2002 1.5 - 1 -

Anode Gate-Anode Leakage Current(Vs = 40 V)' T = 25·C IGAO - 10 - 10

T = 75·C - 100 - 100

Gate to Cathode Leakage Current V Po = 40 V, Anode-cathode short IGKS - 100 - 100

Pulse Voltage Rate of Rise tr - 80 - 80

'In accordance with JEDEC registration data format.

+100V -100V +100V ±100V

150mA

lA 2A SA

±20mA 250~

300mW - 50· to + 100·C

UNITS

V

~A

mA

nA

ns

123

III.: I,

UniJunction Transistors and Switches _______________________ _

2N6027, 2N6028, GES6027, GES6028

seR

Typical circuit

(a)

Fig. 1-Unijunction transistor

+

Programmable unijunction transistor replacing unijunction transistor in typical circuit, Fig. 1, a.

(a)

Unijunction transistor equivalent circuit

(b)

82

Programmable unijunction transistor equivalent circuit

(b)

Fig. 2-Programmable unijunctlon transistor equivalent of unijunction transistor.

RBB'RI+R2 ~VEBI Rt

"J 0; R1 +R2

IE

R

92CS- 42329

Negative resistance characteristic

(c)

R2

PUT R,

92C5-42330

Simplified, typical circuit, Fig. 1, a utilizing programmable unijunction transistor.

(c)

124 ___________________________________________________________ _


2N6027, 2N6028, GES6027, GES6028

• rl° ",

KG.,

Fig. 3 - Offset voltage, peak current, and voltage current measurement circuits and waveform.

92CS-42333

Fig. 4 -Anode gatlNlnode leakage current measurement circuit.

RI + R2 RG a Rt + RZ

", V VS· R, + R2

v •

vp

·S

VF

•• -jJ,!--&-~_I.

92CS-4233r

Fig. 5 - Gats to cathode leakage current measurement circuit.

Vo

.. ~-0.6. - !

I, ,

92CS-42334

Fig. 6 - Pulse output voltage and pulse voltage rate-of-rise measurement circuit and waveform.

125

UniJunction Transistors and Switches ___________________ '--__

2N6027, 2N6028, GES6027, GES6028

.. ~ I Ii. H

IZ

"' '" '" ::> u IZ

~ l< .. "' ..

2

0.01

PROGRAMMABLE UNIJUCTION TRANSISTOR Vs '10V

Fig. 7- Typical peak point current characteristics.

100 VS'lOV

• 4

.. ~o). .. 2 ~ ·11

~ ""'" ~:I00.r--I 0., ~Jl ~ • l- • ........... -......... Z 4 ...

~/~ '" '" ::> 2 ~Jl

"'" u l- i'.. i!OO.1 0 0 .. • l< '" .. •

........... , ... .. 2

0·01

~

.......

"" - -50 25 0 25 50 75 100 -AMBIENT TEMPERATURE (TA)-DC 92CS~42337

Fig. 9 - Typical peak point current characteristics.

3 VOLTAGE SOURCE IVsl'IOV

'" > ~(l. .!.. 2 I-

~~ ~ ~ ... v." '" ~-f! ~ .. I- "'. r. ....

~"o. ~" g l- I " '" ...

~ .. ... - t'--.. ...

0

o~r"°T " ~ -75 -50 -25 a 25 50 75

AMBIENT TEMPERATURE (TAl-DC

92C5-42339

Fig. 11-Typlca/offset vo/tsge character/sties.

126

100

2

0·001 2 468 2 468 Z 468 2 4 8

0.001 0.01 0.1 1 10 GATE "ON-STATE"CURRENT (IG),IG=Vs/Rc;-mA

92eS-42336

Fig. 8 - Typical val/ey current characteristics.

2~---+----+---~----~----~---+----~

-75 -50 -25 0 25 50 75 AMBIENT TEMPERATURE IT4 l-'C

92C5-42338

Fig. 10-Typ/calva/laycurrentcharacteristics.

30 ~v

> 25-,

.!.. SIOtn 16kG

0

~~ ~ 20-... ... , V .. 27kn I- c,.0;' .... 0 15,- .on > /" I-

/ ::> .. # I-

i!l 10 ..

100

./

V /" ~

., ....

rfo09f --::> .. S ,/ ~

a -f.---" 10 15 20 25 30 35 40

VOLTAGE SOURCE IVsl-V 92C5-42340

Fig. 12 - Typical pulsa voltage characteristics.


2N6027, 2N6028, GES6027, GES6028

'2C5-42344

Here are four ways to use the PUT as a unijunction. Note the flexibility due to "programmability:' Applications from long time interval latching timers to wide range relaxation oscillators are possible.

t.aNn -E-

PUT 2.2Nn

92C5-423415

PUT

.2

IN41$4

tNn 2.7kn

"Bi 92CS-42341

Low Ip; very high lv, temperature and V BB compensation

Lowlpandlv Low Ip; medium lv, temperature, V G compensation

Low Ip, medium Iv

Fig. 13 - Typical programmable unijunction transistor circuits.

START

This sampling circuit lowers the effective peak current of the output PUT, 02. By allowing the capacitor to charge with high gate voltage and periodically lowering gate voltage, when 01 fires, the timing reistor can be a value which supplies a much lower current than Ip. The triggering requirement here is that minimum charge to trigger flow through the timing resistor during the period of the 01 oscillator. This is not capacitor size dependent, only capacitor leakage and stability dependent.

+28V ~~----------~----~

Fig. 14 - Hour time-delay sampling circuit.

Here is a handy circuit which operates as an oscillator and a timer. The 2N6028 is normally on due to excess holding current through the 100 kohm resistor. When the switch is momentarily closed, the 10,..F capacitor is charged to a full 15 volts and 2N6028 starts oscillating (1.8 Meg and 820 pF). The Circuit latches when 2N2926 zener breaks down again.

Fig. 15 - 1-second, 1kHz oscillator circuit.

+1~

10",F (GE76F02FC100)

IN ITiATE I


TO-92 and TO-98 Packages Lead 1 - Anode Lead 2 - Gate Lead 3 - Cathode

15kfi 1000Mn

100 PULSE OUTPUT

92C5-42348

220kn

220kn

92C5-42349

_____________________________________________________________ 127

128 ______________________________________________ ___

Silicon Rectifiers Technical Data

_________________ 129

Silicon Rectifiers

Ultra-Fast-Recovery Rectifier Selector Guide and Data Reverse Avg. Forward Surge Rev. Rec. Junction Voltage Current Current Time Capacitance

VRRM IF @ Tc IFSM t. CJ

Type Vpk A ·C A ns pF Package FileNo. Page No.

BYW51-100 100 2x 8' 125 100 35 40 TO-220AB 1412 BYW51-150 150 2x8' 125 100 35 40 TO-220AB 1412 BYW51-200 200 2 x8' 125 100 35 40 TO-220AB 1412 MUR-810 100 8 125 100 35 40 TO-220AC 1355 MUR-815 150 8 125 100 35 40 TO-220AC 1355

MUR-820 200 8 125 100 35 40 TO-220AC 1355 MUR-840 400 8 150 100 60 TO-220AC 2091 MUR-850 500 8 150 100 60 TO-220AC 2091 MUR-860 600 8 150 100 60 TO-220AC 2091 MUR-1610CT 100 2x8' 125 100 35 40 TO-220AB 1885

MUR-1615CT 150 2x8' 125 100 35 40 TO-220AB 1885 MUR-1620CT 200 2x8' 125 100 60 40 TO-220AB 1885 RUR-D1610 100 2x 16t 125 275 35 80 TO-204AA 1383 RUR-D1615 150 2x 16t 125 275 35 80 TO-204AA 1383 RUR-D1620 200 2x 16t 125 275 35 80 TO-204AA 1383

'8 A average per junction t16 A average per junction

Axial-Lead Rectifiers Ultra-Fast-Recovery Rectifier Selector Guide and Data

Reverse Avg.Fwd. Forward Current Fwd. Voll. Rev. Rec. Vollage Current Pk. Surge Peak TA=25·C Time

VRRM 10 @ TA 'FSM IFM VFM t. Type Vpk A ·C A A V ns Package FileNo. Page No.

GE1001 50 1 75 30 1 0.975 25 DO-204AP GE1002 100 1 75 30 1 0.975 35 DO-204AP GE1003 150 1 75 30 1 0.975 25 DO-204AP GE1101 50 2.5 75 50 2 0.975 25 DO-204AP GE1102 100 2.5 75 50 2 0.975 25 DO-204AP

GE1103 150 2.5 75 50 2 0.975 25 DO-204AP GE1301 50 6 75 150 6 0.925 30 GE-4 GE1302 100 6 75 150 6 0.925 30 GE-4 GE1303 150 6 75 150 6 0.925 30 GE-4 A214F 50 2 55 50 5 0.95 35 DO-204AP

A214A 100 2 55 50 5 0.95 35 DO-204AP A214G 150 2 55 50 5 0.95 35 DO-204AP A214B 200 2 55 50 5 0.95 35 DO-204AP A315F 50 3 55 150 5 0.95 35 GE-4 A315A 100 3 55 150 5 0.95 35 GE-4

A315G 150 3 55 150 5 0.95 35 GE-4 A315B 200 3 55 150 5 0.95 35 GE-4 GE1004 200 1 75 30 1 0.975 40 DO-204AP GE1104 200 2 50 20 1 1.25 50 DO-204AP GE1304 200 5 50 70 3 1.25 50 GE-4

130 ______________________________________________________________ __

Silicon Rectifiers

Axial-Lead Rectifiers Fast-Recovery Rectifier Selector Guide and Data

Reverse Avg. Fwd. Forward Cu,rent Fwd. Volt. Rev. Rec. Voltage Currenl Pk. Surge Peak T.=25·C Time

VRRM 10 @ T. 'FSM I,,, V'M t" Type V._ A ·C A A V ns Package FileNo. Page No.

A114F 50 75 40 1.1 200 DO-204AP A114A 100 75 40 1.1 200 DO-204AP A114B 200 75 40 1.1 200 DO-204AP A114C 300 75 40 1.1 200 DO-204AP A114D 400 75 40 1.1 200 DO-204AP

A114E 500 1 75 40 1 1.1 200 DO-204AP A114M 600 1 75 40 1 1.1 200 DO-204AP A115F 50 3 55 110 5 1.1 200 GE-3 A115A 100 3 55 110 5 1.1 200 GE-3 A115B 200 3 55 110 5 1.1 200 GE-3

A115C 300 3 55 110 5 1.1 200 GE-3 A115D 400 3 55 110 5 1.1 200 GE-3 A115E 500 3 55 110 5 1.1 200 GE-3 A115M 600 3 55 110 5 1.1 200 GE-3

Axial-Lead Rectifiers General Purpose Rectifier Selector Guide and Data

Reve,se Avg.Fwd. Forward Cu,rent Fwd. Vall. Rev. Rac. Vollage Cu"enl Pk. Surge Peak T.=25·C Time

VRRM 10 @ T. IFSM I'M V,,, t" .. Type Vpk A ·C A A V p' Package FileNo. Page No.

1N4245 200 55 25 1.2 5 DO-204AP 2093 1N4246 400 55 25 1.2 5 DO-204AP 2093 1N4247 600 55 25 1.2 5 DO-204AP 2093 1N4248 800 55 25 1.2 5 DO-204AP 2093 1N4249 1000 55 25 1.2 5 DO-204AP 2092

1N5624 200 3 70 125 5 1.1 5 GE-3 1N5625 400 3 70 125 5 1.1 5 GE-3 1N5626 600 3 70 125 5 1.1 5 GE-3 1N5627 800 3 70 125 5 1.1 5 GE-3 A15F 50 3 70 125 5 1.1 5 GE-3

A15A 100 3 70 125 5 1.1 5 GE-3 1N5059 200 1 100 50 1 1.2 6 DO-204AP 1N5060 400 1 100 50 1 1.2 6 DO-204AP 1N5061 600 1 100 50 1 1.2 6 DO-204AP IN5062 800 1 100 50 1 1.2 6 DO-204AP

A14F 50 100 50 2.5 1.25 6 DO-204AP A14A 100 100 50 2.5 1.25 6 DO-204AP A14C 300 100 50 2.5 1.25 6 DO-204AP A14E 500 100 50 2.5 1.25 6 DO-204AP A14P 1000 100 50 2.5 1.25 6 DO-204AP

GER4001 50 75 30 1.1 6 DO-204AP GER4002 100 75 30 1.1 6 DO-204AP GER4003 200 75 30 1.1 6 DO-204AP GER4004 400 75 30 1.1 6 DO-204AP GER4005 600 75 30 1.1 6 DO-204AP

GER4006 800 75 30 1.1 6 DO-204AP GER4007 1000 75 30 1.1 6 DO-204AP

___________________________________________________________________ 131

Silicon Rectifiers _____________________________ _

Full-Wave Bridge Rectifiers Selector Guide and Data

Reverse Avg. Fwd. Forward Current Voltage Current Pk. Surge Peak

VRRM 10 @ TA IFSM IFM

Type V •• A ·C A A

DB1F 50 40 50 DB1A 100 40 50 DB1B 200 40 50 DBlO 400 40 50 DB1M 600 40 50

DB1N 800 40 50 DB1P 1000 40 50

Fwd. Volt. TA=2S·C

VFM

V Package FileNo. Page No.

1.1 BR-4 2097 1.1 BR-4 2097 1.1 BR-4 2097 1.1 BR-4 2097 1.1 BR-4 2097

1.1 BR-4 2097 1.1 BR-4 2097

132 _________________________________________________________________ _

Dimensional Outlines and Hardware

__________________ 133

Dimensional Outlines and Hardware ______________________ _

Dimensional Outlines BR-4

DO-204AP

NOTE:

COLOR BAND (POLARITY SYMBOL) INDICATES CATHODE CONNECTION.

~YMBOL

A1

A2 B

0 E

E1

e1

eB L

SYMBOL

</>b </>0 G

L

INCHES

MIN. MAX.

0.080 TYP.

0.125 0.135

0.018 0.020

0.355 0.365

0.300 0.350

0.245 0.255

0.195 0.205

0.290 0.310

0.155 0.165

INCHES

MIN. MAX.

0.028 0.034

0.100 0.150

- 0.240

1.000 -

MILLIMETERS NOTES

MIN. MAX.

1.5 TYP.

3.2 3.4

4.1 5.1

9.0 9.3

7.6 8.9

6.2 6.5

5.0 5.2

7.4 7.9

3.9 4.2

92CS~42582

MILLIMETERS NOTES

MIN. MAX.

0.71 0.88

2.5 3.8

- 6.1

25.4 -

1M _________________________________________________________ ___

________________________ Dimensional Outlines and Hardware

GE-3

NOTE:


GE-4

NOTE:


isYMBOL

c/>b

c/>D G

L

IlYMBOL

c/>b .pD

G L

Dimensional Outlines

INCHES MILLIMETERS

MIN. MAX. MIN. MAX. NOTES

0.048 0.052 1.2 1.3

0.170 0.250 4.3 6.3

- 0.300 - 7.6

1 - 25.4 -92CS~42648

INCHES MILLIMETERS NOTES

MIN. MAX. MIN. MAX.

0.037 0.042 0.94 1.07

0.115 0.180 2.9 4.6

- 0.300 - 7.6

1 - 25.4 -92CS.042647

______________________________________________________________ 135

..

Dimensional Outlines and Hardware _______________________ _


TO-18 -ES .. TINGPLAN.

Iff" ~lJ r I I ';'0 .po, c::=:=::::J I U I I

I ~ •• .-1 L •• 2

NOTES:

1. (Three leads) </Ib2 appllel between 11 and 12' </Ib appllel

between 12 and 0.5 In. (12.70 mm) from leatlng plane.

Diameter II uncontrolled In 11 and beyond 0.5 In. (12.70 mm)

from leallng plane.

2. Leads having maximum diameter 0.019 In. (0.483 mm)

mealured In gauging plane 0.054 In. (1.37 mm) + 0.001 In.

(0.025 mm) - 0.000 In. (0.000 mm) below the leallng plane

of the device Ihall be within 0.007 In. (0.178 mm) of their

true positions relallve to a maximum-width tab.

3. Measured from maximum diameter of the actual device.

4. The device may be measured by direct methods or by the

gauge and gauging procedure described on gauge drawing

GS-2.

5. Tab centerline.

TO-92

r"~-l"" ! ~ i c::=:::J

b~=Q=f---l W::: .. NOTES:

1. Three leads.

2. Contour of the package beyond this zone Is uncontrolled.

3. (Three leads) </Ib2 applies between L1 and L2' </Ib applies

between L2 and 0.5 In. (12.70 mm) from sealing plane.

Diameter Is uncontrolled In L1 and beyond 0.5 In. (12.70 mm) from sealing plane.

SYMBOL

A

</Ib

</Ib2 </10

</101

e

e1 F

I k

I

11

12 a

~YMBOL

A

</Ib

</Ib2 </10

E

e

e1

I L

L1

L2 Q

S

INCHES

MIN. MAX. 0.170 0.210

0.018 0.021

0.018 0.019

0.2011 0.230

0.178 0.195

0.100 T.P.

0.050 T.P.

- 0.030

0.038 0.048

0.028 0.048

0.500 -- 0.050

0.250 -45° T.P.

INCHES

MIN. MAX.

0.170 0.210

0.016 0.021

0.018 0.019

0.175 0.205

0.125 0.185

0.095 0.105

0.045 0.055 0.135 -0.500 -- 0.050

0.250 -0.115 -0.080 0.105

MILLIMETERS NOTES

MIN. MAX. 4.32 5.;,3

OA08 0.533 1

0.408 0.483 1

5.31 5.84

4.52 4.95

2.54 T.P. 2,4

1.27 T.P. 2,4

- 0.782

0.914 1.17 4

0.711 1.22 3

12.70 - 1

- 1.27 1

8.35 - 1 5

92CS-42998

MILLIMETERS NOTES

MIN. MAX.

4.58 5.33

OA07 0.533 1,3

0.407 0.482 3

4.96 5.20

3.94 4.19

2.42 2.86

1.15 1.39

3.43 -12.70 - 1,3

- 1.27 3

6.35 - 3

2.93 - 2

2.42 2.68

92CS-42575

136 ______________________________________________________________ _

________________________ Dimensional Outlines and Hardware

TO-98

cpB2 SEATING FLANGE

NOTES:

1. (Thllle leads) ~B2 applle. belween Ll and L2. ~B applies

between L2 and 0.5 In. (12.70 mm) .rom •• allng plane.

Diameter Is uncontroll.d In Ll and beyond 0.5 In. (12.70 mm) from •• atlng plana.

Devices in TO-98 package are supplied with and without seating flange

TO-204AA

SEATING PLANE


~YMBOL INCHES MILLIMETERS

MIN. MAX. MIN. MAX. NOTES

~D 0.190 0.205 4.83 5.20

t/>Dl 0.185 0.190 4.20 4.82

~B 0.018 0.021 0.407 0.533 1

t/>B2 0.016 0.019 0.407 0.482

E 0.110 0.140 2.80 3.55

e 0.095 0.105 2.42 2.88

el 0.045 0.055 1.15 1.39

F 0.055 0.075 1.40 1.90

G 0.200 0.285 5.08 8.73

L 0.500 - 12.70 - 1

Ll - 0.050 - 1.27 1

L2 0.250 - 8.35 - 1

S 0.085 0.115 2.18 2.92

92CS-42576

SYMBOL INCHES MILLIMETERS

NOTE MIN. MAX. MIN. MAX.

A 0.250 0.450 6.4 11.4 ¢b 0.038 0.043 0.966 1.092 ¢o - 0.875 - 22.22 e 0.420 0.440 10.67 11.17

el 0.205 0.225 5.21 5.71 F - 0.135 - 3.42 L 0.312 - 7.93 -

¢p 0.151 0.161 3.84 4.08 q

~'T:;" ~'T~" R

Rl - 0.188 - 4.77 5 0.655 0.675 16.64 17.14

92CS-37249Rl

_________________________________________________________________ 137

Dimensional Outlines and Hardware _______________________ _

Dimensional Outlines TO-220AB

NOTES:

1. Position of lead to be measured 0.250-0.255 in.

(6.350-6.477 mm) from case.

TO-220AC

TOP VIEW t----~-·1

NOTES:

1. Position of lead 10 be measured 0.250-0.255 in.

(6.350-6.477 mm) from case.

I

SYMBOL

A

A, b

b1 C

c

0

0 1 E

e

e1

e2 F

H

H1

H2 J 1 L

L1

L2 ¢>P Q

SYMBOL

A

A1 b

b1 C

c

0

0 1 E

e1

e2 F

H

H1

H2

H3 J 1 L

L1

L2 ¢>P Q

INCHES

MIN. MAX.

0.140 0.190

0.080 0.085

0.020 0.045

0.045 0.070

-- 0.125 0.015 0.025

0.560 0.625

- 0.100

0.380 0.420

0.090 0.110

0.190 0.210

- 0.030

0.045 0.055

0.230 0.270

0.355 0.370

- 0.160

0.080 0.115

0.500 0.562

- 0.250

0.400 0.410

0.139 0.161

0.100 0.120

INCHES

MIN. MAX.

0.140 0.190

0.080 0.085

0.020 0.045

0.045 0.070

- 0.125 0,015 0.025

0.560 0.625

- 0.100

0.380 0.420

0.190 0.210

- 0.030

0.045 0.055

0.230 0.270

0.355 0.370

- 0.160

- 0.600

0.080 0.115

0.500 0.562

- 0.250

0.400 0.410

0.139 0.161

0.100 0.120

MILLIMETERS

MIN. MAX.

3.56 4.82

2.03 2.16

0.51 1.14

1.14 1.77

- 3.18

0.38 0.63

14.23 15.87

- 2.54

9.66 10.66

2.29 2.79

4.83 5.33

- 0.76

I 1.14 1.39

5.85 6.85

9.02 9.40

- 4.06

2.04 2.92

12.70 14.27

- 6.35

10.16 10.41

3.531 4.089

2.54 3.04

92CS-34697R1

MILLIMETERS

MIN. MAX.

3.56 4.82

2.03 2.16

0.51 1.14

1.14 1.77

- 3.18

0.38 0.63

14.23 15.87

- 2.54

9.66 10.66

4.83 5.33

- 0.76

1.14 1.39

5.85 6.85

9.02 9.40

- 4.06

- 15.24

2.04 2.92

12.70 14.27

- 6.35

10.16 10.41

3.531 4.089

2.54 3.04

92CS-34830R1

138 ___________________________________________________ __

_______________________ Dlmenslonal Outlines and Hardware

TO-204AA

i-- 2 SCREWS, 6-32

{fY- D.377A C-h MICA INSULATOR

e e

e HEAT SINK Q (CHASSIS)

DF378F 00 0 2 NYLON INSULATING

e BUSHINGS _____ I. D. = 0.156 in. (4.00 mm)

1.Slr"'--- SHOULDER DIA. '" 0.250 in. ~ (6.40 mm) MAX"

2 METAL WASHERS SHOULDER THICKNESS @) =0.050 in. (1.27 mmJ MAX.

2 LOCK WASHERS@

2HEX.NUTS@

2S0LDER LUG~ 2HEX,NUTS@

NOTE: MAXIMUM TOAQUE APPLIED TO MOUNTING FLANGE IS 12in.·lbs. (O.14kgim).

92CS-22558R2

TO-220AC

Suggested Mounting Hardware TO-220AB

i---- SCREW, 6·32

~NR23'A RECTANGULAR METAL WASHER

~~ 0.,038 ~ MICA INSULATOR .

~ HOLE DIA.=O.145-0.141 in.

a . (3.68-3.58 mmJ

<> ",-

DFJ78F ~

e HEATSINK e (CHASSIS)

. . INSULATIN~ SHOULDER WASHER

S-- ~·~O~~·ci~~'~,~ .. ~omm) METAL WASHER e 0.250 in. 6.35 imml MAX.

LOCK WASHER \3 HEXNUT @

SOLDER LUG ~ HEXNUT @

NOTE MAXIMUM TORQUE APP~IEO TO MOUNTING FLANGE ISBrn.·lb. (O.09kglmJ

92CS-39586

i---- SCREW,S-32

~NR231A RECTANGULAR METAL WASHER

~ ~r~~~SULATOR ~~HOLEDIA.=O.145.0.141jn. 5 (3.68-3.58 mm)

<>

~e HEATSINK e (CHASSIS)

DF378F

tNSULATIN~ SHOULDER WASHER

S-- ~~6~~·~~~I~I~:~omm) METAL WASHER ® 0.250 in. 6.35 (mm) MAX.

LOCK WASHER 8 HEX NUT @

SOLDER lUG 2 HEXNUT @

NOTE. MA)(IMUM TORQUE APPLIED TO MOUNTING FLANGE I$Brn.lb.(009kglm)

92CS-39587

_________________________________________________________________________________________________________________________________ 139

•

140 ________________________________________________________________ _

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