WTSC - 10 GHz Wire Bondable

200°C high Temperature vertical Silicon Capacitors

Rev 3.6

Key Features Key Applications

The WTSC Capacitors are dedicated to

applications where reliability up to 200°C is the

main parameter. The WTSC is suitable for DC

decoupling. The unique technology of integrated

passive devices in silicon developed by IPDiA,

can solve most of the problems encountered in

demanding applications. These Si capacitors in

ultra–deep trenches have been developed with a

semiconductor process which enables the

integration of high capacitance density from

1.3nF/mm² to 250 nF/mm² (with a breakdown

voltage of respectively 450 V to 11 V).

Our SiCap technology features high reliability -

up to 10 times better than alternative capacitors

technologies - thanks to a full control of the

production process with high temperature curing

(above 900°C) generating a highly pure oxide.

This technology provides industry leading

performances relative to the capacitor stability

over a full temperature range of -55°C/+200°C

with a TC < +/- 1.5%.

In addition, intrinsic properties of the silicon show

a low dielectric absorption and a very low piezo

electric effect resulting in no memory effect. This

Silicon based technology is ROHS compliant.

Wire bondable vertical capacitors

Electrical parameters:

Large capacitance range: few pF to several 10’s nF

Ultra high stability of capacitance value over:

Temperature +/-1.5% (-55°C to +200°C)

Voltage < 0.02 %/V

Aging < 0.001%/1000 hours

Physical parameters:

Various sizes: from 0101 to 0504 formats

Substrate: Silicon with gold backing

* Please refer to our Assembly Application Note for more details

Any demanding applications such as radar, aerospace, wireless infrastructure communication, data broadcasting, automotive…

Applicable for standard wire bonding approach (ball and wedge)

Decoupling / DC noise and harmonic filtering / Matching networks (ex: GaN power amplifier, LDMOS)

High reliability applications

Downsizing

Low profile applications (250 µm)

IPDiA Capacitors – WTSC Series

Electrical Specifications

WTSC Capacitance Range

Termination and Outline

Termination Can be directly mounted on the PCB using die bonding and wire bonding. Bottom electrode in Ti/Ni/Au and top electrode in 3 µm Aluminum (Al/Si/Cu: 98.96%/1%/0.04%). Other top finishings available on request. Compatible with standard wire bonding assembly (ball and wedge).

Package Outline

Packaging

Tape and reel, waffle pack, film frame carrier or raw wafer delivery.

Parameters Value Capacitance range 10 pF to 220 nF Capacitance tolerance ± 15 %(**) Operating temperature range -55 °C to 200 °C Storage temperature - 70 °C to 215 °C Temperature coefficient +/-1.5% from -55 °C to +200 °C Breakdown voltage (BV) 11, 30, 50, 150, 450V Capacitance variation versus RVDC 0.02 %/V (from 0 V to RVDC)

Equivalent Series Inductance(ESL) typ 100 pH @SRF

Equivalent Series Resistance(ESR) typ. 100 m

Insulation resistance 100 G min @ RVDC & +25°C

30 G min @ RVDC & +200°C Aging Negligible, < 0.001 % / 1000 h Reliability FIT<0.017 parts / billion hours, Capacitor height Max 250 µm(**)

(**) Other values on request

Fig.1: Capacitance variation vs temperature

(for WTSC and MLCC technologies)

Fig.2: Capacitance variation vs DC biasing voltage (for WTSC and MLCC technologies)

Fig.3: Various WTSC measurement results

(Impedances in shunt mode)

(mm) Pad dimension Case size (typ. ±0.01 mm) a b L W T

0101 > 0.15 > 0.15 0.25(***) 0.25(***)

0.25 (standard profile

0201 > 0.40 > 0.15 0.50 0.25 0202 > 0.40 > 0.40 0.50 0.50 0303 > 0.70 > 0.70 0.80 0.80 0404 > 0.94 > 0.94 1.04 1.04 0504 > 1.28 > 0.92 1.38 1.02

25°C

Available parts – see table above. For other values, contact your IPDiA sales representative.

(***): except 1 nF/BV 50 0101 (0.294 x 0.294 mm)

Part number Product description Case Size Thickness

WTSC.xxx Wire Bondable high Temp. vertical Silicon Capacitor, from -55 to 200°C, 10 GHz

935 144 624 522 WTSC, 22 nF/0504/BV 50 250 µm 0504 250 µm

935 144 620 510 WTSC, 10 nF/0303/BV 50 250 µm 0303 250 µm

935 144 821 510 WTSC, 10 nF/0202/BV 30 250 µm 0202 250 µm

935 144 521 410 WTSC, 1 nF/0202/BV 150 250 µm 0202 250 µm

L

T

W

b

a

IPDiA Capacitors – Assembly by Wirebonding

Reproduction in whole or in part is prohibited without the

prior written consent of the copyright owner. The information

presented in this document does not form part of any

quotation or contract, is believed to be accurate and reliable

and may be changed without notice. No liability will be

accepted by the publisher for any consequence of its use.

Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

For more information, please visit: http://www.ipdia.com To contact us, email to: sales@ipdia.com

Date of release: 5th July 2016 Document identifier: CL

Assembly by Wirebonding

The attachment techniques recommended by IPDiA for the WTSC capacitors on the customers substrates are fully detailed in specific documents available on our website. To assure the correct use and proper

functioning of IPDiA capacitors please download the assembly instructions on www.ipdia.com/assembly and read them carefully.

For WTSC assembly instructions, please go to: www. ipdia.com/assembly and download the pdf file called ‘WTSC Capacitors - Assembly by Wirebonding’