“where ics are in the ieee”ewh.ieee.org/r5/dallas/sscs/slides/20120829dallas.pdf · part of...
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![Page 1: “Where ICs are in the IEEE”ewh.ieee.org/r5/dallas/sscs/slides/20120829dallas.pdf · Part of IEEE with 400,000 members . ... enc gate # ... [El-Chammas, VLSI 2010] CAL V lo V hi](https://reader031.vdocuments.site/reader031/viewer/2022030802/5b0af3717f8b9a99488d0076/html5/thumbnails/1.jpg)
“Where ICs are in the IEEE”
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10,000 members
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Part of IEEE with 400,000 members
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Chapter & DL Events
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(September 2011)
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Knowledge ... staying current with the fast changing world of solid-state
circuit technology Community … local and global activities, unparalleled networking
opportunities, chapter activities, electing IEEE SSCS leadership
Profession … empowering members to build and own their careers,
mentoring, making the world a better place Recognition … Best Paper Awards, IEEE Fellow & Field Awards,
Student Travel Grants & Pre-doctoral Achievement Award …
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Organize chapter events
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Nominate senior members & fellows
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Energy Limits in A/D Converters
August 29, 2012
Boris Murmann
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A/D Converter ca. 1954
http://www.analog.com/library/analogDialogue/archives/39-06/data_conversion_handbook.html
P/fs = 500W/50kS/s = 10mJ
8
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ADC Landscape in 2004
9
B. Murmann, "ADC Performance Survey 1997-2012," [Online]. Available: http://www.stanford.edu/~murmann/adcsurvey.html
20 30 40 50 60 70 80 90 100 110
10-12
10-10
10-8
10-6
SNDR [dB]
P/f
snyq
[J]
ISSCC & VLSI 1997-2004
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ADC Landscape in 2012
10
B. Murmann, "ADC Performance Survey 1997-2012," [Online]. Available: http://www.stanford.edu/~murmann/adcsurvey.html
20 30 40 50 60 70 80 90 100 110
10-12
10-10
10-8
10-6
SNDR [dB]
P/f
snyq
[J]
ISSCC & VLSI 1997-2004
ISSCC & VLSI 2005-2012
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Observation
• ADCs have become substantially
“greener” over the years
• Questions
– How much more improvement can we
hope for?
– What are the trends and limits for
today’s popular architectures?
– Can we benefit from further process
technology scaling?
11
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Outline
• Fundamental limit
• General trend analysis
• Architecture-specific analysis – Flash
– Pipeline
– SAR
– Delta-Sigma
• Summary
12
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Fundamental Limit
2
FS
s
snyq
OSR
V1
f2 2SNR
kT f
C
1
2C
Brickwall
LPF at fsnyq/2
Class-B
13
min FS s DDP CV f V DD FSV V
[Hosticka, Proc. IEEE 1985; Vittoz, ISCAS 1990]
minmin
snyq
PE 8kT SNR
f
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ADC Landscape in 2004
14
20 30 40 50 60 70 80 90 100 110
10-14
10-12
10-10
10-8
10-6
SNDR [dB]
Energ
y [J]
ISSCC & VLSI 1997-2004
Emin
4x/6dB
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ADC Landscape in 2012
15
20 30 40 50 60 70 80 90 100 110
10-14
10-12
10-10
10-8
10-6
SNDR [dB]
Energ
y [J]
ISSCC & VLSI 1997-2004
ISSCC & VLSI 2005-2012
Emin
4x/6dB
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Normalized Plot
16
20 30 40 50 60 70 80 90 100 110
100
102
104
106
108
SNDR [dB]
EA
DC/E
min
ISSCC & VLSI 1997-2004
ISSCC & VLSI 2005-2012
~10,000
100x in 8 years
~100
3-4x in 8 years
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Aside: Figure of Merit Considerations
• There are (at least) two widely used ADC
figures of merit (FOM) used in literature
• Walden FOM
– Energy increases 2x per bit (ENOB)
– Empirical
• Schreier FOM
– Energy increases 4x per bit (DR)
– Thermal
– Ignores distortion
ENOBsnyq
PowerFOM
2 f
BWFOM DR(dB) 10log
P
17
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FOM Lines
• Best to use thermal FOM for designs above 60dB
18
20 30 40 50 60 70 80 90 100 110
10-14
10-12
10-10
10-8
10-6
SNDR [dB]
Energ
y [J]
ISSCC & VLSI 1997-2004
ISSCC & VLSI 2005-2012
Emin
Walden FOM = 10fJ/conv-step
Schreier FOM = 170dB
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Walden FOM vs. Speed
• FOM “corner” around 100…300MHz 19
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+04 1.E+05 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+11
FO
MW
[fJ/c
on
v-s
tep
]
fsnyq [Hz]
ISSCC 2012
VLSI 2012
ISSCC 1997-2011
VLSI 1997-2011
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110
120
130
140
150
160
170
180
1.E+04 1.E+05 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+11
FO
MS
[dB
]
fsnyq [Hz]
ISSCC 2012
VLSI 2012
ISSCC 1997-2011
VLSI 1997-2011
Schreier FOM vs. Speed
20
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Energy by Architecture
21
20 30 40 50 60 70 80 90 100 110
10-12
10-10
10-8
10-6
SNDR [dB]
P/f
s [J]
Flash
Pipeline
SAR
Other
FOM=100fJ/conv-step
FOM=10fJ/conv-step
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Flash ADC
• High Speed – Limited by single comparator plus encoding logic
• High complexity, high input capacitance – Typically use for resolutions up to 6 bits
2B-1
Dout
Vin
2B-1 Decision LevelsEenc Ecomp
22
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Encoder
• Assume a Wallace encoder (“ones counter”)
• Uses ~2B–B full adders, equivalent to ~ 5∙(2B–B) gates
23
B
enc gateE 5 2 B E
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Matching-Limited Comparator
24
Simple Dynamic Latch
22 2 cVTVOS VT
ox
CAA
WL C
2
VT oxc c min2
VOS
A CC C
2
2B 2 2 BDDcomp ox VT cmin DD2
inpp
VE 144 2 C A C V 2 1
V
SNR[dB] 3B
6
Cc Cc
Assuming Ccmin = 5fF
for wires, clocking, etc.
inpp
VOS B
V13
4 2
Matching
Energy
3dB penalty
accounts for
“DNL noise”
Offset
Required
capacitance
Confidence
interval
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Typical Process Parameters
25
Process
[nm]
AVT
[mV-mm]
Cox
[fF/mm2]
AVT2Cox /kT Egate [fJ]
250 8 9 139 80
130 4 14 54 10
65 3 17 37 3
32 1.5 43 23 1.5
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15 20 25 30 35 40
10-16
10-14
10-12
10-10
10-8
10-6
SNDR [dB]
P/f
snyq
[J]
Flash ISSCC & VLSI 1997-2012
Eflash65nm
Ecomp65nm
Emin
Comparison to State-of-the-Art
26
[4] Daly, ISSCC 2008
[5] Chen, VLSI 2008
[6] Geelen, ISSCC 2001 (!)
[6]
[1]
[5]
[1] Van der Plas, ISSCC 2006
[2] El-Chammas, VLSI 2010
[3] Verbruggen, VLSI 2008
[3] [4] [2]
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Impact of Scaling
27
15 20 25 30 35 4010
-14
10-12
10-10
10-8
10-6
SNDR [dB]
P/f
snyq
[J]
Flash ISSCC & VLSI 1997-2012
Eflash250nm
Eflash130nm
Eflash65nm
Eflash32nm
Emin
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Impact of Calibration (1)
• Important to realize that only comparator power reduces
28
15 20 25 30 35 40
10-16
10-14
10-12
10-10
10-8
10-6
SNDR [dB]
P/f
snyq
[J]
Flash ISSCC & VLSI 1997-2012
Ecomp65nm
Ecomp65nm,cal
Emin
cal
inpp
VOS B B
V13
4 2 Bcal 3
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Impact of Calibration (2)
29
15 20 25 30 35 40
10-16
10-14
10-12
10-10
10-8
10-6
SNDR [dB]
P/f
snyq
[J]
Flash ISSCC & VLSI 1997-2012
Flash65nm
Flash65nm,cal
Emin
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Ways to Approach Emin (1)
• Offset calibrate each comparator
– Using trim-DACs
30
[El-Chammas, VLSI 2010]
CAL
Vlo Vhi
DcalnCAL
Vlo Vhi
Dcalp
Decoder
124888
VinpVrefn
Vinn Vrefp
Voutn Voutp
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Ways to Approach Emin (2)
• Find ways to reduce clock power
• Example: resonant clocking
31
[Ma, ESSCIRC 2011]
(54% below CV2)
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Raison D'Être for Architectures Other
than Flash…
32
20 30 40 50 60 70 80 90 100 11010
-14
10-12
10-10
10-8
10-6
SNDR [dB]
P/f
s [J]
Flash
Pipeline
SAR
Other
Eflash65nm
Eflash32nm
Emin
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Pipeline ADC
• Conversion occurs along a cascade of stages
• Each stage performs a coarse quantization and computes its error (Vres)
• Stages operate concurrently – Throughput is set by the
speed of one single stage
33
ADC DAC
-
D1
Vres1Vin1
Stage 1 Stage n-1 Stage nSHA
Vin
G1
Align & Combine BitsDout
G1
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Pipelining – A Very Old Idea
34
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Typical Stage Implementation
[Abo, 1999]
Power
goes here
35
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Simplified Model for Energy Calculation
• Considering the most basic case – Stage gain = 2 1 bit resolution per stage
– Capacitances scaled down by a factor of two from stage to stage (first order optimum)
– No front-end track-and-hold
– Neglect comparator energy
22 2
C C/2 C/4 C/2m
2
MSB LSB
36
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Simplified Gain Stage Model
37
gm
gm
2 1'
1C
C/2
CeffC/2
Assumptions
Closed-loop gain = 2
Infinite transistor fT (Cgs=0)
Thermal noise factor = 1,
no flicker noise
Bias device has same
noise as amplifier device
Linear settling only (no
slewing)
C12
C 3C
2
eff
C C 5C 1 C
2 2 6 out
eff eff
1 kT kT kTN 2 6 5
C C C
Feedback factor
Effective load capacitance Total integrated output noise
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Total Pipeline Noise
38
in,tot 22 2
kT 1 kT 1 1 1N 1 5 ...
1 1C 2 C 24 8
2 4
3 kT kT 1 1 15 ...
2 C C 4 8 16
kT4
C
First sampler
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Key Constraints
39
2
inppV1
2 2SNR
kT4
C
Thermal noise
sets C
eff s s
m
d
C T / 2 T / 2
g 1 ln SNRln
Settling time
sets gm
gm sets power m
DD
m
D
gP V
g
I
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2
DDpipe
minpp DD
D
V 1 1E 640 kT SNDR ln SNDR
gV V
I
Pulling It All Together
40
Excess noise
Non-unity feedback
factor
Settling
“Number of ”
Supply
utilization
VDD
penalty
Transconductor
efficiency
• For SNDR = {60..80}dB, VDD=1V, gm/ID=1/(1.5kT/q),
Vinpp=2/3V, the entire expression becomes
pipeE 388...517 kT SNDR
• For realistic numbers at low resolution, we must
introduce a bound for minimum component sizes
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Energy Bound
• Assume that in each stage Ceff > Ceffmin = 50fF
• For n stages, detailed analysis shows that this
leads to a minimum energy of
41
pipe,min eff min DD
m
D
ln SNDRE 2n C V
g
I
• Adding this overhead to Epipe gives the energy
curve shown on the next slide
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40 45 50 55 60 65 70 75 80 85 90
10-14
10-12
10-10
10-8
SNDR [dB]
P/f
snyq
[J]
Pipeline ISSCC & VLSI 1997-2012
Epipe
Emin
Comparison to State-of-the-Art
42
[4] Anthony, VLSI 2008
[5] Lee, ISSCC 2012
[6] Hershberg, ISSCC 2012
[6]
[1]
[5]
[1] Verbruggen, ISSCC 2012
[2] Chu, VLSI 2010
[3] Lee, VLSI 2010
[2] [3]
[4]
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Ways to Approach Emin (1)
• Comparator-based SC circuits replace op-amps
with comparators
• Current ramp outputs
– Essentially “class-B” (all charge goes to load) 43
[Chu, VLSI 2010]
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Ways to Approach Emin (2)
• Use only one residue amplifier
• Build sub-ADCs using energy efficient SAR ADCs
• Essential idea: minimize overhead as much as
possible
44
[Lee, VLSI 2010]
Similar:
[Lee, ISSCC 2012]
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Ways to Approach Emin (3)
• Completely new idea: ring amplifier
– As in “ring oscillator”
45
[Hershberg, ISSCC 2012]
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Ways to Approach Emin (4)
• Class-C-like oscillations until charge transfer is complete
– Very energy efficient 46
[Hershberg, ISSCC 2012]
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Expected Impact of Technology Scaling
• Low resolution (SNDR ~ 40-60dB) – Continue to benefit from scaling
– Expect energy reductions due to reduced Cmin and reduction of CV2-type contributors
• High resolution (SNDR ~ 70dB+) – It appears that future improvements will
have to come from architectural innovation
– Technology scaling will not help much and is in fact often perceived as a negative factor in noise limited designs (due to reduced VDD) • Let’s have a closer look at this…
47
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A Closer Look at the Impact of
Technology Scaling
• Low VDD hurts, indeed, but one should realize that
this is not the only factor
• Designers have worked hard to maintain (if not
improve) Vinpp/VDD in low-voltage designs
• How about gm/ID?
2
DD
DD inpp m
D
V1 1E
V V g
I
48
• As we have shown
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-0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.60
5
10
15
20
25
30
VGS
-Vt [V]
gm
/ID [
S/A
]
180nm
90nm
gm/ID Considerations (1)
• Largest value occurs in subthreshold ~(1.5kT/q)-1
• Range of gm/ID does not scale (much) with technology 49
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-0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.60
20
40
60
80
100
120
VGS
-Vt [V]
f T [
GH
z]
180nm
90nm
gm/ID Considerations (2)
• fT is small in subthreshold region
• Must look at gm/ID for given fT requirement to compare
technologies 50
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0 20 40 60 80 1005
10
15
20
25
30
gm
/ID [S
/A]
fT [GHz]
180nm
90nm
45nm
gm/ID Considerations (3)
• Example
– fT = 30GHz
– 90nm: gm/ID = 18S/A
– 180nm: gm/ID = 9S/A
• For a given fT, 90nm
device takes less current
to produce same gm
– Helps mitigate, if not
eliminate penalty due
to lower VDD (!)
51
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ADC Energy for 90nm and Below
52
20 30 40 50 60 70 80 90 100 110
10-12
10-10
10-8
10-6
SNDR [dB]
P/f
snyq
[J]
ISSCC & VLSI 1997-2012
90nm and below
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Successive Approximation Register ADC
• Input is approximated via a binary search
• Relatively low complexity
• Moderate speed, since at least B+1 clock cycles
are needed for one conversion
• Precision is determined by DAC and comparator
DAC
VIN
Control
Logic
Clock
VREF
VDAC
/ VREF
Time
1
1/2
3/4
5/8V
IN
1/2 3/4 5/8 11/16 21/32 41/64
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B
B
Classical Implementation
54
[McCreary, JSSC 12/1975]
Elogic
Ecomp Edac
logic
gates 2fJE 8 B
bit gate
(somewhat optimistic)
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DAC Energy
• Is a strong function of the switching scheme
• Excluding adiabatic approaches, the “merged capacitor
switching” scheme achieves minimum possible energy
55
n 1
n 3 2i i 2
dac ref
i 1
E 2 2 1 CV
2
dac refE 85CV
For 10 bits:
[Hariprasath, Electronics Lett., 4/2010]
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DAC Unit Capacitor Size (C)
• Is either set by noise, matching, or minimum
realizable capacitance (assume Cmin = 0.5fF)
• We will exclude matching limitations here, since
these can be addressed through calibration
• Assuming that one third of the total noise power
is allocated for the DAC, we have
56
2
inpp
comp quantB
V1
2 2SNR
kTN N
2 C
minB 2
inpp
1C 24kT SNR C
2 V
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Comparator
57
Simple Dynamic Latch
in
c
kTN
C
c cmin2
inpp
1C 24kT SNR C
V
22DD
comp cmin DD2
inpp
V 1E 24kT SNR C V B
V 2
SNR[dB] 3B
6
Switching
probability
Cc Cc
(Assuming Ccmin = 5fF)
Thermal Noise
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20 30 40 50 60 70 80 90
10-14
10-12
10-10
10-8
SNDR [dB]
P/f
snyq
[J]
SAR ISSCC & VLSI 1997-2012
ESARcomp
ESAR
Emin
Comparison to State-of-the-Art
58
[5] Liu, ISSCC 2010
[6] Hurrell, ISSCC 2010
[7] Hesener, ISSCC 2007
[6]
[1]
[5]
[1] Shikata, VLSI 2011
[2] Van Elzakker, ISSCC 2008
[3] Harpe, ISSCC 2012
[4] Liu, VLSI 2010
[2] [3]
[4]
[7]
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Ways to Approach Emin (1)
59
[Giannini, ISSCC 2008]
High Noise
Comp
Low Noise
Comp
Dynamic Noise
adjustment for
comparator power
savings
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Ways to Approach Emin (2)
• Minimize unit caps as much as possible
for moderate resolution designs
– Scaling helps!
60
[Shikata, VLSI 2011]
0.5fF unit capacitors
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Delta-Sigma ADCs
• Discrete time – Energy is dominated by the first-stage
switched-capacitor integrator
– Energy analysis is similar to that of a pipeline stage
• Continuous time – Energy is dominated by the noise and
distortion requirements of the first-stage continuous time integrator
– Noise sets resistance level, distortion sets amplifier current level
– Interestingly, this leads to about the same energy limits as in a discrete-time design
61
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Overall Picture
62
20 30 40 50 60 70 80 90 100 11010
-14
10-12
10-10
10-8
10-6
SNDR [dB]
P/f
s [J]
Flash
Pipeline
SAR
Other
Eflash32nm,cal
Epipe
Esar
ECT
Emin
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Summary • No matter how you look at it, today’s ADCs are extremely
well optimized
• The main trend is that the “thermal knee” shifts very rapidly toward lower resolutions – Thanks to process scaling and creative design
• At high resolution, we seem to be stuck at E/Emin~100 – The factor 100 is due to architectural complexity and
inefficiency: excess noise, signal < supply, non-noise limited circuitry, class-A biasing, …
• This will be very hard to change
– Scaling won’t help (much)
– Some of the recent data points already use class-B-like amplification
– Can we somehow recycle the signal charge?
• Are there completely new ways to approach A/D conversion?
63
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64 http://www.wired.com/wiredenterprise/2012/08/upside/