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November 2009

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1107 / FPF1108 • Rev. 1.0.1

FPF1107 / FPF1108 — A

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FPF1107 / FPF1108 Advance Load Management Switch

Features 1.2V to 4V Input Voltage Operating Range

Typical RDS(ON): - 35mΩ at VIN=3.3V - 55mΩ at VIN=1.8V - 85mΩ at VIN=1.2V

Slew Rate Control with tR: 130µs

Output Discharge Function on FPF1108

Low <1µA Quiescent Current at VON=VIN

ESD Protected: Above 4000V HBM, 2000V CDM

GPIO/CMOS-Compatible Enable Circuitry

Applications Mobile Devices and Smart Phones

Portable Media Devices

Digital Cameras

Advanced Notebook, UMPC, MID

Portable Medical Devices

GPS and Navigation Equipment

Description The FPF1107/08 are low RDS P-channel MOSFET load switches of the IntelliMAX™ family. Integrated slew-rate control prevents inrush current from glitch supply rails with capacitive loads common in power applications.

The input voltage range operates from 1.2V to 4V to fulfill today's lowest ultra-portable device supply requirements. Switch control is by a logic input (ON-pin) capable of interfacing directly with low-voltage CMOS control signals and GPIOs in embedded processors.

Ordering Information

Part Number

Part Marking

Switch (Typical) At 1.8VIN

InputBuffer

Output Discharge

ON PinActivity tR Eco

Status Package

FPF1107 QC 55mΩ CMOS NA Active HIGH 130µs Green 4-Ball, Wafer-Level

Chip-Scale Package (WLCSP), 1.0 x 1.0mm, 0.5mm Pitch FPF1108 QD 55mΩ CMOS 65Ω Active

HIGH 130µs Green

For Fairchild’s definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1107 / FPF1108 • Rev. 1.0.1 2

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Application Diagram

FPF1107/FPF1108

VIN

GND

VOUT

ONOFF ON

CIN COUT

To Load

Figure 1. Typical Application

Notes: 1. CIN=1μF, X5R, 0603, for example Murata GRM185R60J105KE26 2. COUT=1μF, X5R, 0805, for example Murata GRM216R61A105KA01

Block Diagram

FPF1107/8

Figure 2. Block Diagram (Output Discharge for FPF1108 Only)


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Pin Configurations

Figure 3. 1 x 1mm WLCSP Bumps Facing Down Figure 4. 1 x 1mm WLCSP Bumps Facing Up

A1 A2

B1 B2

VOUT

ON

VIN

GND

A2 A1

B2 B1

VIN

GND

VOUT

ON

Figure 5. Pin Assignments (Top View) Figure 6. Pin Assignments (Bottom View)

Pin Definitions

Pin # Name Description A1 VOUT Switch Output A2 VIN Supply Input: Input to the Power Switch. B1 GND Ground B2 ON ON/OFF Control, Active HIGH


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Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameter Min. Max. Unit VIN VIN, VOUT, VON to GND -0.3 4.2 V ISW Maximum Continuous Switch Current 1.2 A PD Power Dissipation at TA=25°C 1.0 W

TSTG Storage Junction Temperature -65 +150 °C TA Operating Temperature Range -40 +85 °C

ΘJA Thermal Resistance, Junction-to-Ambient 1S2P with 1 Thermal Via 95

°C/W 1S2P without Thermal Via 187

ESD Electrostatic Discharge Capability

Human Body Model, JESD22-A114 4

kV Charged Device Model, JESD22-C101 2

Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings.

Symbol Parameter Min. Max. Unit VIN Supply Voltage 1.2 4.0 V TA Ambient Operating Temperature -40 +85 °C


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Electrical Characteristics Unless otherwise noted, VIN=1.2 to 4.0V, TA=-40 to +85°C, typical values are at VIN=3.3V and TA=25°C.

Symbol Parameter Conditions Min. Typ. Max. Units Basic Operation

VIN Supply Voltage 1.2 4.0 V IQ(OFF) Off Supply Current VON=GND VOUT=Open, VIN=4V 1 μA ISD(OFF) Off Switch Current VON=GND VOUT=GND 1 μA

IQ Quiescent Current IOUT=0mA, VON=VIN 1

μA IOUT=0mA, VON < VIN 3

RON On Resistance

VIN=3.3V, IOUT=200mA, TA=25°C 35 50

mΩ VIN=1.8V, IOUT=200mA, TA=25°C 55 70 VIN=1.5V, IOUT=200mA, TA=25°C 70 VIN=1.2V, IOUT=200mA, TA=25°C 85 150 VIN=1.8V, IOUT=200mA, TA=85°C(3) 65 100

RPD Output Discharge RPULL DOWN VIN=3.3V, VON=0V, IFORCE=20mA, TA=25°C, FPF1108 65 110 Ω

VIH On Input Logic High Voltage VIN=1.2V to 4.0V 1.1 V VIL On Input Logic Low Voltage VIN=1.2V to 4.0V 0.35 V ION On Input Leakage VON=VIN or GND -1 1 μA

Dynamic Characteristics

tDON Turn-On Delay(4) VIN=3.3V, RL=10Ω, CL=0.1µF, TA=25°C, FPF1107/8

80 μs tR VOUT Rise Time(4) 130 μs tON Turn-On Time(4,6) 210 μs tDON Turn-On Delay(4)

VIN=3.3V, RL=500Ω, CL=0.1µF, TA=25°C, FPF1107/8

70 95 μs tR VOUT Rise Time(4) 95 120 μs tON Turn-On Time(4,6) 165 215 μs

FPF1107

tDOFF Turn-Off Delay(4) VIN=3.3V, RL=10Ω, CL=0.1µF, TA=25°C

2.0 2.5 μs tF VOUT Fall Time(4) 2.2 μs

tOFF Turn-Off(4,7) 4.2 μs tDOFF Turn-Off Delay(4)

VIN=3.3V, RL=500Ω, CL=0.1µF, TA=25°C

7.0 μs tF VOUT Fall Time(4) 110 μs

tOFF Turn-Off(4,7) 117 μs

FPF1108(5)

tDOFF Turn-Off Delay(4) VIN=3.3V, RL=10Ω, CL=0.1µF, RPD=65Ω, TA=25°C

2.0 2.5 μs tF VOUT Fall Time(4) 1.9 μs

tOFF Turn-Off(4,7) 3.9 μs tDOFF Turn-Off Delay(4)

VIN=3.3V, RL=500Ω, CL=0.1µF, RPD=65Ω, TA=25°C

2.5 μs tF VOUT Fall Time(4) 10.6 μs

tOFF Turn-Off(4,7) 13.1 μs Notes: 3. This parameter is guaranteed by design and characterization; not production tested. 4. tDON/tDOFF/tR/tF are defined in Figure 7. 5. Output discharge path is enabled during off.


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Timing Diagram

10%

VON

VOUT

VOUT

tDONtDOFF

10%

3.3V

90%

tF

90%

tR

90%

10%

50%50%

Notes: 6. tON=tR + tDON. 7. tOFF=tF + tDOFF.

Figure 7. Timing Diagram


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Typical Performance Characteristics

0.00

0.05

0.10

0.15

0.20

0.25

0.30

-40 -15 10 35 60 85TJ, JUNCTION TEMPERATURE (°C)

V IN

SH

UTD

OW

N C

UR

REN

T ( μ

A)

VIN = 4.0V

VIN = 1.2V

VIN = 3.3V

VON = VOUT = 0V

0 .0 0

0 .0 5

0 .1 0

0 .1 5

0 .2 0

0 .2 5

1 .0 1 .5 2 .0 2 .5 3 .0 3 .5 4 .0

S U PP L Y V O L T A G E (V )

VIN

SH

UTD

OW

NC

UR

REN

T(μ

A)

2 5 °C

8 5 °C

-4 0 °C

V O N = V O U T = 0 V

Figure 8. Shutdown Current vs. Temperature Figure 9. Shutdown Current vs. Supply Voltage

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.10


OFF

SU

PPLY

CU

RR

ENT

( μA

)

VON = 0V

VIN = 4.0V

VIN = 1.2V

VIN = 3.3V

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

1.0 1.5 2.0 2.5 3.0 3.5 4.0SUPPLY VOLTAGE (V)

OFF

SU

PPLY

CU

RR

ENT

( μA

)VON = 0V

25°C

85°C

-40°C

Figure 10. Off Supply Current vs. Temperature (FPF1107, VOUT is Floating)

Figure 11. Off Supply Current vs. Supply Voltage (FPF1107, VOUT is Floating)

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0.035

0.040

0.045

0.050


SUPP

LY C

UR

REN

T ( μ

A)

VON = VIN

VIN = 4.0V

VIN = 1.2VVIN = 3.3V

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

1.0 1.5 2.0 2.5 3.0 3.5 4.0SUPPLY VOLTAGE (V)

SUPP

LY C

UR

REN

T ( μ

A)

25°C

85°C

-40°C

VON = VIN

Figure 12. Quiescent Current vs. Temperature

(VON=VIN) Figure 13. Quiescent Current vs. Supply Voltage


FPF1107 / FPF1108 — A

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0.00

0.50

1.00

1.50

2.00

2.50

3.00


SUPP

LY C

UR

REN

T ( μ

A)

VON = 0.75 x VIN

VIN = 4.0V

VIN = 1.2V

VIN = 3.3V

0.00

0.50

1.00

1.50

2.00

2.50

1.0 1.5 2.0 2.5 3.0 3.5 4.0

SU

PP

LYC

UR

RE

NT

(µA)

S U P P LY V OLTA GE (V )

+85°C

+25°C

-40°C

Figure 14. Quiescent Current vs. Temperature (VON=0.75 x VIN)

Figure 15. Quiescent Current vs. Supply Voltage at VON=1.2V

0

20

40

60

80

100

120


ON

RES

ISTA

NC

E (m

Ω)

VON = VIN

IOUT = 200mA

VIN = 4.0V

VIN = 1.2V

VIN = 3.3V

Figure 16. RON vs. Temperature Figure 17. RON vs. Supply Voltage

0.20

0.30

0.40

0.50

0.60

0.70

0.80

0.90

1.00

1.0 1.5 2.0 2.5 3.0 3.5 4.0SUP PLY VOL TAGE (V)

VO

N IN

PU

TLO

GIC

VO

LTA

GE

(V) 25°C

VIH

VIL

Figure 18. ON-Pin Threshold vs. VIN

0

50

100

150

200

250

300

1.0 1.5 2.0 2.5 3. 0 3.5 4.0SUPPLY VOLT AG E (V)

25°C85°C

-40°C

VON=VINIOUT=200mA

ON RESI STANCE (m

Ω

)


FPF1107 / FPF1108 — A

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1

10

10 0

100 0

-40 -15 10 35 60 85T J, JU N C T IO N T E M P E R A T U R E (°C )

RIS

E/F

AL

LT

IME

( µs) t R

t F

V IN = 3 .3VC L = 0 .1μ FR L = 10Ω

1

10

100

1000

-40 -15 10 35 60 85T J, JU N CTION TEMP ERATU RE (°C)

ON

/OF

FD

ELA

YT

IME

( µs)

tDOFF

tDON

V IN = 3.3VC L = 0.1μFR L = 10Ω

Figure 19. VOUT Rise and Fall Time vs. Temperature at RL=10Ω

Figure 20. VOUT Turn-On and Turn-Off Delay vs. Temperature at RL=10Ω

50

60

70

80

90

100

110

120

-40 -15 10 35 60 85TJ, JU N CTION TEMP ER ATU RE (°C)

RIS

E/FA

LLTI

ME

( µs)

t R

t F

V IN = 3.3VC L = 0.1μFR L = 500Ω

0

10

20

30

40

50

60

70

80

90

100

-40 -15 10 35 60 85T J, JU N CTION TEM P ER ATU RE (°C)

ON

/OF

FD

ELA

YTI

ME

( µs)

tDOFF

tDON

V IN = 3.3VC L = 0.1μFR L = 500Ω

Figure 21. VOUT Rise and Fall Time vs. Temperature at RL=500Ω

Figure 22. VOUT Turn-On and Turn-Off Delayvs. Temperature at RL=500Ω

RIS

E/D

ELAY

TIM

E[µ

s]

80

20

40

60

100

120

140

160

10 100 1000

O U T PU T LO AD [ ]

tR

tDON

Figure 23. VOUT Turn-On and Turn-Off Delayvs. Output Load at VIN=3.3V


FPF1107 / FPF1108 — A

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Figure 24. Turn-On Response (VIN=3.3V, CIN=1µF, COUT=0.1µF, RL=10Ω)

Figure 25. Turn-Off Response (VIN=3.3V, CIN=1µF, COUT=0.1µF, RL=10Ω)

Figure 26. Turn-On Response (VIN=3.3V, CIN=1µF, COUT=0.1µF, RL=500Ω)

Figure 27. Turn-Off Response (FPF1107 – No Output Pull-Down Resistor)(VIN=3.3V, CIN=1µF, COUT=0.1µF, RL=500Ω)


FPF1107 / FPF1108 — A

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Application InformationInput Capacitor The IntelliMAXTM switch doesn’t require input capacitor. To reduce device inrush current effect, a 0.1µF ceramic capacitor, CIN, is recommended close to the VIN pin. A higher value of CIN can be used to further reduce the voltage drop experienced as the switch is turned on into a large capacitive load.

Output Capacitor The IntelliMAXTM switch works without an output capacitor. However, if parasitic board inductance forces VOUT below GND when switching off, a 0.1µF capacitor, COUT, should be placed between VOUT and GND.

Fall Time Device output fall time can be calculated based on RC constant of external components as follows:

2.2CRt LLF ××= (1)

where tF is 90% to 10% fall time, RL is output load and CL is output capacitor.

The same equation works for a device with a pull-down output resistor, then RL is replaced by a parallel connected pull-down and external output resistor combination, as follows:

2.2CRRRRt L

PDL

PDLF ××

+×

= (2)

where tF is 90% to 10% fall time, RL is output load, RPD=65Ω is output pull-down resistor, and CL is the output capacitor.

Resistive Output Load If resistive output load is missing, the IntelliMAXTM switch without pull-down output resistor is not discharging output voltage. Output voltage drop depends, in that case, mainly on external device leaks.


FPF1107 / FPF1108 — A

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Recommended Land Pattern and Layout For best thermal performance and minimal inductance and parasitic effects, it is recommended to keep input and output traces short and capacitors as close to the

device as possible. Below is a recommended layout for this device to achieve optimum performance.

Figure 28. Recommended Land Pattern and Layout


FPF1107 / FPF1108 — A

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Physical Dimensions

BOTTOM VIEW

SIDE VIEWS

TOP VIEW RECOMMENDED LAND PATTERN (NSMD PAD TYPE)

NOTES:A. NO JEDEC REGISTRATION APPLIES.

B. DIMENSIONS ARE IN MILLIMETERS.

C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994.

D. DATUM C IS DEFINED BY THE SPHERICAL CROWNS OF THE BALLS.

E. PACKAGE NOMINAL HEIGHT IS 582 MICRONS ±43 MICRONS (539-625 MICRONS).

F. FOR DIMENSIONS D, E, X, AND Y SEE PRODUCT DATASHEET.

G. DRAWING FILENAME: MKT-UC004ABrev2.

2X

PIN A1 AREA

0.03 CE

D

A

B

2X0.03 C

0.05 C0.6250.539

C

0.332±0.0180.250±0.025

SEATING PLANED

F

F

0.06 C

1 2

AB

0.005 C A B0.50

0.50

Ø0.315±0.0254X

(Y)±0.018

(X)±0.018

(Ø0.250)Cu Pad

(Ø0.350)Solder Mask

0.50

0.50

Figure 29. 4 Ball, 1.0 x 1.0mm Wafer Level Chip Scale WLCSP Packaging

Product-Specific Dimensions Product D E X Y

FPF1107 960µm ± 30µm 960µm ± 30µm 0.230mm 0.230mm

FPF1108 960um ± 30µm 960um ± 30µm 0.230mm 0.230mm Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/.


FPF1107 / FPF1108 — A

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www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

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