vishwani d. agrawal james j. danaher professor department of electrical and computer engineering
DESCRIPTION
ELEC 5970-001/6970-001(Fall 2005) Special Topics in Electrical Engineering Low-Power Design of Electronic Circuits Pseudo-nMOS, Dynamic CMOS and Domino CMOS Logic. Vishwani D. Agrawal James J. Danaher Professor Department of Electrical and Computer Engineering Auburn University - PowerPoint PPT PresentationTRANSCRIPT
10/25/05 ELEC 5970-001/6970-001 Lecture 15 1
ELEC 5970-001/6970-001(Fall 2005)Special Topics in Electrical EngineeringLow-Power Design of Electronic Circuits
Pseudo-nMOS, Dynamic CMOSand Domino CMOS Logic
Vishwani D. AgrawalJames J. Danaher Professor
Department of Electrical and Computer EngineeringAuburn University
http://www.eng.auburn.edu/[email protected]
10/25/05 ELEC 5970-001/6970-001 Lecture 15 2
Why Not Static CMOS?
• Advantages: Static (robust) operation, low power, scalable with technology.
• Disadvantages:– Large size: An N input gate requires 2N transistors.– Large capacitance: Each fanout must drive two
devices.
• Alternatives: Pass-transistor logic (PTL), pseudo-nMOS, dynamic CMOS, domino CMOS.
10/25/05 ELEC 5970-001/6970-001 Lecture 15 3
A Pseudo-nMOS Gate
PUN
PDN
VDD
CMOS Gate
PDN
VDD
Pseudo-nMOS Gate
Output
Inp
uts
Inp
uts
Output
10/25/05 ELEC 5970-001/6970-001 Lecture 15 4
A Pseudo-nMOS Inverter
W/Lp = 4
W/Lp = 2
W/Lp = 0.25
W/Lp
= 0.5W/Lp
= 1
0.0 0.5 1.0 1.5 2.0 2.5
Input voltage, V
Ou
tpu
t vo
ltag
e, V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Nominal device: W 0.5μ── = ──── = 2 Ln 0.25μ
10/25/05 ELEC 5970-001/6970-001 Lecture 15 5
Performance of Pseudo-nMOSSize, W/Lp Logic 0 voltage
Logic 0 static power
Delay
0 → 1
4 0.693 V 564 μW 14 ps
2 0.273 V 298 μW 56 ps
1 0.133 V 160 μW 123 ps
0.5 0.064 V 80 μW 268 ps
0.25 0.031 V 41 μW 569 ps
J. M. Rabaey, A. Chandrakasan and B. Nokolić, Digital IntegratedCircuits, Upper Saddle River, New Jersey: Pearson Education, 2003.
10/25/05 ELEC 5970-001/6970-001 Lecture 15 6
Negative Aspects of Pseudo-nMOS
• Output 0 state is ratioed logic.
• Faster gates mean higher static power.
• Low static power means slow gates.
10/25/05 ELEC 5970-001/6970-001 Lecture 15 7
A Dynamic CMOS Gate
PDN
VDD
Inp
uts
Output
CK
CL
10/25/05 ELEC 5970-001/6970-001 Lecture 15 8
Two-Phase Operation in a Vector Period
Phase CK Inputs Output
Precharge low don’t care high
Evaluation high Valid inputs Valid outputs
10/25/05 ELEC 5970-001/6970-001 Lecture 15 9
4-Input NAND Dynamic CMOS Gate
Output= CK’ + (ABCD)’∙ CK
CL
CK
A
B
C
D
CK
VDD
tL→H ≈ 0
10/25/05 ELEC 5970-001/6970-001 Lecture 15 10
Characteristics of Dynamic CMOS
• Nonratioed logic – sizing of pMOS transistor is not important for output levels.
• Larger precharge transistor reduces output fall time, but increases precharge power. Faster switching due to smaller capacitance.
• Static power – negligible.• Short-circuit power – none.• Dynamic power
– no glitches – following precharge, signals can either make transitions only in one direction, 1→0, or no transition, 1→1.
– only logic transitions – all nodes at logic 0 are charged to VDD during precharge phase.
10/25/05 ELEC 5970-001/6970-001 Lecture 15 11
Logic Activity• Probability of 0 → 1 transition:
– Static CMOS, p0 p1 = p0(1 – p0)– Dynamic CMOS, p0
• Example: 2-input NOR gate– Static CMOS, Pdyn = 0.1875 CLVDD
2fCK
– Dynamic CMOS, Pdyn = 0.75 CLVDD2fCK
p1=0.5
p1=0.5
p1=0.25 p0=0.75
10/25/05 ELEC 5970-001/6970-001 Lecture 15 12
Charge Leakage
OutputA’
CL
CK
A=0
CK
VDD
CK
A’
TimeP
rech
arg
e
Eva
luat
e
IdealActual
J. M. Rabaey, A. Chandrakasan and B. Nokolić, Digital IntegratedCircuits, Upper Saddle River, New Jersey: Pearson Education, 2003.
10/25/05 ELEC 5970-001/6970-001 Lecture 15 13
Bleeder Transistor
Output
CL
CK
A
B
C
D
CK
VDD
Output
CL
CK
A
B
C
D
CK
VDD
10/25/05 ELEC 5970-001/6970-001 Lecture 15 14
A Problems With Dynamic CMOS
CK
A=0→1
CK
VDDCK
A
B
C
B
J. M. Rabaey, A. Chandrakasan and B. Nokolić, Digital IntegratedCircuits, Upper Saddle River, New Jersey: Pearson Education, 2003.
CK
CK
VDD
C
prech. evaluate
10/25/05 ELEC 5970-001/6970-001 Lecture 15 15
Domino CMOS
CK
A=0→1
CK
VDD
CK
A
B
C
B
R. H. Krambeck, C. M. Lee and H.-F. S. Law, “High-Speed Compact Circuits with CMOS,” IEEE J. Solid-State Circuits, vol. SC-17, no. 3, pp. 614-619, June 1982.
CK
CK
VDD
C
prech. evaluate
10/25/05 ELEC 5970-001/6970-001 Lecture 15 16
Bleeder in Domino CMOS
Output
CL
CK
A
B
C
D
CK
VDD
10/25/05 ELEC 5970-001/6970-001 Lecture 15 17
Logic Mapping for Noninverting Gates
A
B
C
D
E
FG
H
ABC
G+H
AND
OR AND/OR
X
Y
Y
ABC
D
E
F
G+H
10/25/05 ELEC 5970-001/6970-001 Lecture 15 18
Selecting a Logic Style• Static CMOS: most reliable and predictable,
reasonable in power and speed, voltage scaling and device sizing are well understood.
• Pass-transistor logic: beneficial for multiplexer and XOR dominated circuits like adders, etc.
• For large fanin gates, static CMOS is inefficient; a choice can be made between pseudo-nMOS, dynamic CMOS and domino CMOS.