viareggio – caen june 24 th, 2011 elettronica basata sul diamante: applicazioni nella fisica delle...

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Elettronica basata sul Diamante: Applicazioni nella Fisica delle Alte Energie, Fisica Nucleare, Astrofisica, Fisica Medica ed Elettronica di Potenza

S2DELSolid State and Diamond Electronics Lab

Università degli Studi “Roma Tre”

CVD Diamond based Active Devices

S2DEL

DiaC2Lab(Diamond & Carbon Compounds Lab)

IMIP - CNR - Montelibretti (RM)

Paolo Calvani

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Daniele M. TrucchiPaolo Calvani

Alessandro BellucciEmilia Cappelli

Stefano Orlando

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Mechanical Applications

Electronic Applications

1989-1995 Study of Nucleation and Growth Mechanisms of CVD Diamond

1995-1999 CVD Diamond protective coatings of cutting toolsCoordination of MURST-CNR 5% Project

2003-2006 Development of high-tech materials and ceramic coatings ENEA-MIUR “PROMOMAT” Strategic Project

1999-2001 Secondary electron emission amplifiers for scanning electron microscopyMADESS II Applied Research Project

2000-2002 VUV & DUV Radiation Detectors in collaboration with S2DEL – Univ. Roma Tre

ASI ARS1/R07/01 Aerospace Project

2001-2005 Poly-Diamond Radiation Dosimeters for Radiation Therapy Coordination of European Project “DIAMOND” G5RD-CT01-00603

2003-2007 Nanostructured Carbon and graphene Structures for Opto-Electronic applications

FIRB Project “Micro & Nanocarbon” & FISR Project “High Density Memories”

2008-2010 Systems for direct nuclear-to-electric energy conversionCoordination of CNR-RSTL “ECO-Diamond” Project

2008-today Development of Single-Crystal Diamond dosimeters in collaboration with S2DEL - Univ. Roma Tre

2010-2013 Thermionic-thermoelectric conversion module for solar concentrated systems

E2PHEST2US Project

CNR-IMIP: Know-How & Projects

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Material Production

~

Hot FilamentCVD for diamond film deposition

Microwave CVD for diamond (doped) film deposition

Technological Processes for

Device Fabrication

Characterization of Chemical-Physical

Properties

Characterization of Device Performance

Spectral Photometry

Raman & IR

Pulsed laser (Excimer &

Nd:YAG) ablation for

(nanostructured) thin-film

deposition of carbon, carbides, refractory metals

RF Sputtering for deposition of

metals Ti, Al, Cr, …

SEM & EDS

AFM

Microscopy

Spectroscopy

MW-CVD for surface hydrogen

termination

Four-Point Probe under

vacuum,T=25-400 °C

X-Ray Photoconducti

vity Setup

Secondary Electron Emission

Characterization Setup

Vacuum & Temperature Electronic

Characterization (VTEC) (10-9 Torr, T=77-1200

K) for Thermionic Emission

Seebeck Effect Measurement System

for Thermoelectric Characterization

Spectral (UV-Vis-NIR)

Photoconductivity Setup

CNR-IMIP: Facilities

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Material

Band gap

Thermal conductivity

Breakdown electric field

Eb

MobilityCarriers

sat. velocity vsat

Dielectric constant

εr

eV W/cmK 106 V/cm cm2/Vs 107 cm/s -

Diamond 5.5 20 102000 -

h1.0 5.7

Gallium nitride 3.4 1.5 2.5 2000 2.5 8.9

Silicon carbide 3.27 4.9 3.0 1000 2.0 9.7

Gallium Arsenide 1.42 0.55 0.4 8500 1.29 12.9

Silicon 1.12 1.5 0.3 1400 1.0 11.8

Germanium 0.67 0.58 0.1 3900 1.0 16.2

5

High Frequency – High Power Field Effect Transistors

UV Power Switches

Renewable Energies Conversion Stages

Diamond Electronic Properties

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Plasma assisted Hydrogen termination of CVD Diamond induces p-type conductive channel

6

Evolution of the band bending, activated by air exposure, during the electron transfer process at the

interface between diamond and water layer[b]: density-of-states (DOS) is changing from 3D to 2D: 2DHG

S2DEL

High Frequency – High PowerField Effect Transistors

Fabricated by S2DEL and IFN-CNR

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Channel conductance is always positive.

No self heating effects!

Maximum VDS applied=80 VEapplied= 2 MV/cm

RF Power Characterization by Politecnico di Torino

CLASS A @ 2GHzPout=0.2 W/mm

Gain=8 dBPAE=21.3%

Pout @ 1GHz ~ 0.8 W/mm[a]

Best result for Polycrystalline Diamond

LG=200nm, WG=50umVDS=-14 V, VGS=-0.3 VfMAX = 15.2 GHzft = 6.2 GHz

S2DEL

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-20 dB/dec.

VGS=-0.2 V, VDS=-10 V

Gain = 15 dB@ 1 GHz

Gain = 15 dB@ 1 GHz

Eapplied= 0.5 MV/cm

WG=25 μm Wg=50 μm

fMAX =26.3 GHzfMAX =26.3 GHz

fT = 13.2 GHz

fT = 13.2 GHz

Gain = 22 dB @ 1 GHz

Gain = 22 dB @ 1 GHz

fMAX = 23.7 GHz

fT = 6.9 GHz

Polycrystalline DiamondPolyD4 by Russian Academy of Sciences

Single Crystal DiamondP7MS by Russian Academy of Sciences

LG=0.2 μmS2DEL

RF Small Signal Characterization in collaboration with by Tor Vergata University

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-20 dB/dec.

Lg=0.2 μm, Wg=25 μmVGS=0.0 V, VDS=-35 V

Gain =16 dB @1GHz

fMAX = 35 GHz

fT = 10 GHz Eapplied= 1.75 MV/cm

Polycrystalline Diamond PolyD4 by Russian Academy of Sciences

S2DEL

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S2DEL

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0,0

0,2

0,4

0,6

0,8

1,0

-5 10-9

0 5 10-9

1 10-8

1,5 10-8

2 10-8

Nor

mal

ized

sig

nal

Time (ns)

DUT

50 Oscilloscope input resistance

Lecroy WavePro 9602 GHz 16Gs/s

digital oscilloscope

Picosecond 5550B18 GHz Bias teeVDS

=193 nm

Si diode(for trigger)

Neweks PSX 100 excimer laserFilled with ArF gas mixture

x

Laser pulse shaperecorded by

vacuum phototube

GPIB

VGS(Keithley 617)

S2DELUV POWER SWITCHES

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-5 10-1

0

5 10-1

1 100

1,5 100

2 100

-10 0 10 20 30

Time (ns)

VGS

=-10.0 V

VGS

=-8.6 V

VGS

=-7.0 V

VGS

=-5.0 V

VGS

=-2.5 V

VGS

=+1.0 V

VGS

=0.0 V

Dra

in-Sou

rce

Phot

ogen

erat

ed V

olta

ge (

V)

VDS=-9.6 V

12/23

-2 10-1

-1 10-1

0

1 10-1

2 10-1

3 10-1

4 10-1

5 10-1

6 10-1

-10 0 10 20 30

Time (ns)

VDS

=-6.0 V

VDS

=-5.0 V

VDS

=-4.0 V

VDS

=-3.0 V

VDS

=-2.5 VV

DS=-0.5 V

VDS

=-0.0 V

Dra

in-Sou

rce

Phot

ogen

erat

ed V

olta

ge (

V)

VGS=-3.4 V

Source DrainG

diamond

UV generated

carriers

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-0,01

0

0,01

0,02

0,03

0,04

0,05

0,06

0,07

0 0,02 0,04 0,06 0,08

Peak

Am

plit

ude

(V)

VDD

(V)

13/23

Source DrainG

diamond

UV generated

carriers

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EU Project E2PHEST2US’

Partners:•CNR (Italy, Scientific Coordination)

•CRR (Italy, Management Coordination)•SHAP (Italy)

•Tel Aviv University (Israel)•Tubitak (Turkey)

•Prysmian (Multinational Industry)•Maya (San Marino)

Duration: 3 years (Jan 2010 - Jan 2013)•Total Project Cost: 2.68 M€•Total EU Funding: 1.98 M€

*For details, http://www.ephestus.eu

Renewable Energies Conversion Stage

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EU Project E2PHEST2US’

Rload

n

p

n

p

n

p

Rload

TR (700-1000 °C)

TE

TC (250-400 °C)

TTE

TAmb

Radiation

Absorber

Thermionic Emitter

Thermionic Stage Load

Inter-electrode Space (<1 mm)

Collector Thermoelectric Stage Load

Thermoelectric Stage

Final Thermal Stage

Concentrated Solar

Radiation(400 – 1000

suns)

Development of:

•A radiation absorber made of ceramic materials able to work stably at high temperature (700 - 1000 °C)

•A thermionic conversion stage with CVD diamond as the active material

•A thermoelectric conversion stage constituted by high Seebeck coefficient materials

•Maximum theoretical efficiency ≈ 30%

T

z

UnderVacuum

*For details, http://www.ephestus.eu

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S2DELSolid State and Diamond Electronics Lab

Università degli Studi “Roma Tre”

CVD Diamond based Active Devices

S2DEL

DiaC2Lab(Diamond & Carbon Compounds Lab)

IMIP - CNR - Montelibretti (RM)

Thanks for the attention

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Alternative Technology in Concentrating Systems•Multi-junction Photovoltaic Cells

•Thermodynamic Conversion by Heat Engines (Stirling, Rankine)

•Highly Expensive

•Mandatory Need of Cooling (Conversion Efficiency Exponentially Decreases with Temperature)

•Illumination Local Inhomogeneities Causes Output Bottlenecks

•Production Dependent on Semiconductor Industry (Few Large-Scale World Suppliers)

Nominal Conversion Efficiency of 30%

Compactness

No mechanical parts in movement

•Nominal Conversion Efficiency of 35% at High Temperatures (> 600 °C)

•Not Compact System

•Mechanical Parts in Movement (Degradation with Operative Time)

•Economically Reasonable for Large Plants (> 10 kWe)

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