veljko grilj ru đ er bošković institute, zagreb, croatia silicon detector workshop split,...
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![Page 1: Veljko Grilj Ru đ er Bošković Institute, Zagreb, Croatia Silicon Detector Workshop Split, Croatia, 8-10 October 2012](https://reader037.vdocuments.site/reader037/viewer/2022103022/56649d045503460f949d828f/html5/thumbnails/1.jpg)
DETECTOR TESTING FACILITY AT RBI(IBIC (Ion Beam Induced Charge) EXPERIMENT)
Veljko Grilj
Ruđer Bošković Institute, Zagreb, Croatia
Silicon Detector WorkshopSplit, Croatia, 8-10 October 2012
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1. ACCELERATORS 1.0 MV HVE
Tandetron accelerator
6.0 MV EN Tandem Van de Graaff accelerator
IAEA beam line
TOF ERDA
PIXE/RBS
Dual-beam
irradiation
Ion microprobe
Nuclear reactions
In-air PIXE
PIXE crystal spectromet
er
Det.test
.IBIC
12
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1.1. New detector testing beam line
1. Beam deflector and/or scanner
2. Pre-chamber with beam degrader/diffuser
3. Final chamber with beam in air capability
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1.2. Nuclear microprobe
XY
protonbeam
scangenerator
XY
quadrupole doubletfocusing lens
sampleobject slits
IBIC signal
IBIC - chargecollection efficiency
images
IONS- p, , Li, C, O,..
RANGE - 2 to 200 m
ION RATE- currents 0 - 106 p/s
ION POSITION- focusing and scanning
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500 10001E-6
1E-5
1E-4
1E-3
0,01
0,1
1
10
100
1000
10000
100000
Num
ber of
cha
rge
pairs
(io
n*nm
)-1
Depth (nm)
protons
CSi
Cu I
Eions = 1 MeV/amuMIPs
Silicon I 127 Si 28 C 12 He 4 H 1
Range(µm)E=1 MeV
0.37 1.13 1.6 3.5 16.3
Range (µm)E=10 MeV
3.7 4.8 9.5 69.7 709
proton
He12C
28Si127I
1.3. Available ion beams
Accel. voltages 0.1 to 6.0 MVNegative Ion sources:- Duoplasmatron- RF He- Sputtering
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2. ION BEAM INDUCED CHARGE - theory
V
Q
V
Vout
Ouput signal Vout
Deposited energy
Principles of radiation detection techniques
Vout = F (deposited energy, free carrier transport)
Nuclear spectroscopy Well known
Free charge genetration and
transport
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2. ION BEAM INDUCED CHARGE - theory
V
Q
V
Vout
Ouput signal Vout
Deposited energy
Principles of IBIC
Vout = F (deposited energy, free carrier transport)
Free charge genetration and
transport
Well known Material characterization
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2. ION BEAM INDUCED CHARGE - theory
2
2
2
220
20
24
1ln2
ln4
c
v
c
v
I
vmNZ
vm
ze
dx
dE
Bethe formula:
a) Energy deposition by ions
Principles of IBIC
b) Creation of e-h pairs
6/ 10
eV
MeVEN
eh
dephe
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jV
trEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=0
vd
vq)t(I
year 1964
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jV
trEvqi
Gunn’s theorem:
V
Q
V
Vout
d
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
T=1
d
vq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jV
trEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=2
d
vq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jV
trEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=3
d
vq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jV
trEvqi
Gunn’s theorem:
V
Q
V
Vout
d
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
T=4
d
vq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jV
trEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=5
d
vq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jV
trEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=6
d
vq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jV
trEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=7
d
vq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jV
trEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=8
d
vq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jV
trEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=9
d
vq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jV
trEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=10
d
vq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jV
trEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=11
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2. ION BEAM INDUCED CHARGE - theory
Impact of defects on charge carriers mobility:
Principles of IBIC
-2 0 2 4 6 8 10 12 14 16
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
d
vqI
qQtot
qQtot
t
d
vqI exp
created
induced
Q
QCCE - physical opservable:
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2. ION BEAM INDUCED CHARGE - theory
Principles of IBIC
startifinali
induced VVqQ
- direct implication from Gunn’s theorem:
.
))((
constVii
jV
trEvqi
- consequences:
electronsholes
ion beam
CCE 100%
a)
b)
- V0 - V0
-V 0
he
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2. ION BEAM INDUCED CHARGE - theory
Advantages of using focused ions:- spatial resolution- wide spread of ion ranges
Principles of IBIC
20
mm
20 mm
Electrons10 keV
Electrons40 keV2 MeV H+ in Si 3 MeV H+ in Si
4 MeV H+ in Si
2 mm
4 mm
6 mm
47 m
m
90 m
m 147
mm
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2. ION BEAM INDUCED CHARGE
PIN diode
Samples
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2. ION BEAM INDUCED CHARGE
CVDdiamond
CdInGaSesolar cell
Si DSSD(16x16 strips)
Ion beam
Samples
Laura Grassi, W
ednesday,
16:00h
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2. ION BEAM INDUCED CHARGE
100 m
Geometries
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3. IBIC EXAMPLES
- by proper selection of ion type and energy, CCE (charge collection efficiency) at different sample depths can be imaged.
4.5 MeV Lirange 6μm
3 MeV protonsrange 90 μm
Si Schotky diode
proton
He12C
28Si127I
surface
bulk
Frontal IBIC
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3. IBIC EXAMPLES
4.5 MeV Li7 ions (range in Si 8.5 m)
7.875 O16 ions(range in Si 4.5 m)
8.25.4
0
5.4
0
m
ionsLi
m
ionsO
dxdxdE
dxdxdE
Li image - O image / 2.8IBIC between 4.5 and 8.5 m
Frontal IBIC – depth profiling
Si Schotky diode
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3. IBIC EXAMPLES
Frontal IBIC – drift & diffusion
d
W p
W
neutraldepletion dxL
Wx
dx
dEdx
dx
dEQQQ exp
0
drift diffusion
E ≠ 0
E = 0
minority carrier diffusion length
4H-SiC diode
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3. IBIC EXAMPLES
d
W p
W
neutraldepletion dxL
Wx
dx
dEdx
dx
dEQQQ exp
0
drift diffusion
E ≠ 0
E = 0
Frontal IBIC – drift & diffusion
4H-SiC diode
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3. IBIC EXAMPLES
d
W p
W
neutraldepletion dxL
Wx
dx
dEdx
dx
dEQQQ exp
0
drift diffusion
E ≠ 0
E = 0
Frontal IBIC – drift & diffusion
4H-SiC diode
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3. IBIC EXAMPLES
d
W p
W
neutraldepletion dxL
Wx
dx
dEdx
dx
dEQQQ exp
0
drift diffusion
E ≠ 0
- direct measurement of diffusion length
Lp = (9.0±0.3) μm
Frontal IBIC – drift & diffusion
4H-SiC diode
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3. IBIC EXAMPLES
Frontal IBIC – μτ mapping
E
d
d
ECCE
eh
eh
/
/ exp1
- from Gunn’s theorem with assumptions of full depletion, constant electric field and generation near one electrode:
Vcmave /101 23,
Vcmavh /104 25,
electrons holes
Hecht equation
CdZnTe- sample thickness > 2 mm
- IBIC with 2 MeV p+, range < 30 μm
M. Veale et al., IEEE TNS, 2008
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Si power diode
E = 0
pn junction
E < 0
ion beam
0 zdz
CCE (z<zd) ≈ 1
CCE (z>zd) = exp(-(z-zd)/Lp,n)
hole or electrondiffusion length
3. IBIC EXAMPLES
Lateral IBIC – drift and diffusion
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3 MeV proton beam
X-Y scanning
Cooling-heating
Bias Preamplifier Amplifier
ADC
Digital oscilloscope
DSO
TRIBIC
DAQ
IBIC MAPS
CdZnTe
Au-contacts
3. IBIC EXAMPLES
Temperature dependent lateral IBIC
CdZnTe
- temperature range 166-329 K
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(mt)e=(1.4)*10-3 cm2/V(mt)h=1*10-5 cm2/V
(mt)e=(1.4)*10-3 cm2/V(mt)h=1*10-5 cm2/V
IBIC line scan (anode to cathode)for CCE=100%
3. IBIC EXAMPLES
Temperature dependent lateral IBIC
CdZnTe
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3. IBIC EXAMPLES
Radiation hardness tests
- For 100% ion impact detection efficiency, IBIC
can be used to monitor irradiation fluence
- Irradiation of arbitrary shapes
- On-line monitoring of CCE degradation
Ion beam induced damage:
50 Li7 m-2 = 5×109 cm-2
6 Li7 m-2 = 6×108 cm-2
(4 events per pixel)
IBIC on-line monitoring:
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Irradiation pattern (3 x3 quadrants, 50 x 50 pixels, 100 x 100 m2 each, 20 m gaps, tirrad = 5 min. – 3 h )
3. IBIC EXAMPLES
Radiation hardness tests
- damage done with He, Li, O & Cl ions of similar range
Si diode
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3. IBIC EXAMPLES
Radiation hardness tests Modeling of CCE:- doping profiles & el. field (CV)- drift velocity profiles (el. field)- hole contribution negligible- vacancy profile (SRIM)- predominantly divacancies (DLTS)- dE/dx from (SRIM)- electron lifetime:
k = 0.88 *10-15
k = 0.18 !!18% of radiation induced defects leads to stable
divacancies !
heheKCCE ,*
,*1
hehek ,, effective fluence
Si diode
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4. ION INDUCED DLTS
Question: how to calculate the energy levels of produced traps?
Answer: DLTS, but what if.....a) number of traps is very very large? b) I want good spatial resolution? c) my sample is diamod?
Radiation produces lattice defects el. active traps, CCE<100%
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4. ION INDUCED DLTS
Question: how to calculate the energy levels of produced traps?
Answer: DLTS, but what if.....a) number of traps is very very large? b) I want good spatial resolution? c) my sample is diamod?
Ion Induced
DLTSSteps:- IBIC with MeV ions, charge carriers will fill traps - record cumulative collected charge in time using charge sensitive preamp and digital scope at different temperatures- choose rate windows like in conventional DLTS- plot Q(t2)-Q(t1) vs. T
- make Arrhenius analysis and get activation energy of the defect
Radiation produces lattice defects el. active traps, CCE<100%
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4. ION INDUCED DLTS 6H-SiC diode
- irradiation with 1 MeV electrons, 215101 cm el. active traps, CCE<100%
- IBIC with 5.486 MeV alphas
cumulative collected charge 250K<T<320 K
Q(t2)-Q(t1) vs. T
Estimated activation energy:IIDLTS DLTS
0.50±0.05 eV 0.53±0.07 eV
N. Iwamoto et al., IEEE TNS, 2011
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5. TIME RESOLVED IBIC - TRIBIC
C. Canali, E. Gatti, S.F. Koslov, P.F. Manfredi, C. Manfredotti, F. Nava, A. QuiriniNucl. Instr. Meth. 160 (1979) 73-77
t
d
vqI exp
ns15
(transient current technique, TCT)- use of current sensitive amplifier instead of charge
sensitive- high frequency oscilloscope, - novel technique ???
400 μm thick natural diamond
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5. TIME RESOLVED IBIC - TRIBIC
- 2 GHz, 40 dB, 200ps rise time amplifier (CIVIDEC)- broad-band 3GHz scope (LeCroy)
TCT on scCVD diamond at low temperatures
H. Jansen (CERN), CARAT Workshop, GSI, 2011
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Lower fields are required to reach saturation velocity at low tempertures
5. TIME RESOLVED IBIC - TRIBIC
Saturation velocity
H. Jansen (CERN), CARAT Workshop, GSI, 2011
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Plasma effects
5. TIME RESOLVED IBIC - TRIBIC
Plasma effects
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Significantely higher charge trapping at low temperatures !!
5. TIME RESOLVED IBIC - TRIBIC
Charge trapping/detrapping
H. Jansen (CERN), CARAT Workshop, GSI, 2011
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Detrapping (~ 10 ns)
5. TIME RESOLVED IBIC - TRIBIC
Charge trapping/detrapping
H. Jansen (CERN), CARAT Workshop, GSI, 2011
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5. TIME RESOLVED IBIC - TRIBIC
Position sensitivity- scCVD diamond, 500 μm thick- lateral scan with 4.5 MEV p- (μτ)e< (μτ)h
- 6 GHz, 15dB preamp (Minicircuits)- 5 GHz, 10 GS/s scope (LeCroy)
0 500μm
Achievable resolution ≈ 10 μm
500 μm thick scCVD diamond
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Thank you for attention!