understanding ddr4 and today’s dram frontier - … · 2014-10-16 · understanding ddr4 and...

Understanding DDR4

and Today’s DRAM Frontier

Oct 15th 2014

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Contents

1. Industry Trend

2. Introduction of DDR4

3. New Technology Node

4. 3D Stacking Technology

5. What’s coming Next

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DRAM Market & Application

47% of DRAM for Server and PC application

7%

Industrial

Military

Aerospace

Server

(15%)

Mainframe

Supercomputer

Server

Workstation

PC

(32%) Desktop

Notebook

Mini laptop

Consumer

& Gfx

(21%)

TV/ LCD/ Printer

Set-top box/ D.Camera

Navigation/ Black Box

Gfx card / Video Game

Home Appliance

Mobile

(25%) Tablet

Smart Phone

Cellular Phone

EDP (Electronic Data Processing)

Source : Gartner(‘14.1Q)

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Memory RAS and Low TCO are required for server

Server Application Trend

Server Virtualization Moving to Cloud Big Data

Low TCO Enhanced RAS High Performance

• Operating voltage • Stand-by power • Core & I/O power

• Better S/I • Reinforced resiliency

• High bandwidth • Better efficiency

Source : Gartner(‘14.1Q)

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Mobility and small form factor are key index

Client Application Trend

Smart Phone & Tablet 2-in-1 Ultrabook™ Traditional NB AIO/NUC

Mobility PC like Experience

Longer Battery Life Small Form Factor Better Experience

• Operating voltage • Stand-by power • Core & I/O power

• Limited real estate • High capacity DRAM

• High bandwidth • Better efficiency

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High Capacity

High Performance/Watt

High Reliability

But Low Cost

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4th Generation of DDR SDRAM

Successor of DDR3 from 2014 supporting all Computing system

C:\>

PC66 -133 DDR DDR2 DDR3 DDR4

MDDR MDDR2 LPDDR3 LPDDR4

GDDR GDDR2 GDDR3 GDDR4 GDDR5

’02 ’14 ’07 ’05 ….

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DDR4 Fully Addresses Industry Requirements

• Up to 3.2Gbps with more coming

• 20~40% power savings with power features

X2 Bandwidth with

Lower Power

• Single-ended

• Same clocking (Source Synchronous) Evolutionary path

• Double banks

• Higher density (up to 16Gb/mono, 128Gb/3DS) Better Resources

• +5 Power savings (Voltage/IO/Features) Lower Power Consumption

• +6 RAS features Greater Reliability

• Keep 8 bit prefetch Bank grouping Low Cost

Key Market Needs & How DDR4 Meets Them

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Contents

1. Industry Trend





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DDR4 Feature Summary

DDR4 has advanced features over DDR3

Spec items DDR3 DDR4

Density / Speed 512Mb~4Gb

0.8~1.8Gbps 4Gb~16Gb

1.6~3.2Gbps

Interface

Voltage (VDD/VDDQ/VPP)

1.5V/1.5V/NA (1.35V/1.35V/NA)

1.2V/1.2V/2.5V

Data IO CTT (34ohm) POD (34ohm)

Vref_DQ External Vref (VDD/2) Internal Vref (need training)

CMD/ADDR IO CTT CTT

Strobe Bi-dir / diff Bi-dir / diff

Core architecture

# of banks 8Banks 16Banks (4Bank Group)

Page size(x4/8/16) 1KB / 1KB / 2KB 512B / 1KB / 2KB

# of prefetch 8bits 8bits

Added functions RESET/ZQ/Dynamic ODT + 3DS/CRC/DBI/Multi preamble …

Physical

Package type/balls (X4,8/X16)

78 / 96 BGA 78 / 96 BGA

DIMM type R, LR, U, SoDIMM

DIMM Capacity 512MB to 64GB 8GB to 256GB

DIMM pins 240 (R,LR,U) / 204 (So) 288 (R,LR,U) / 260 (So)

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Advanced Features for Performance

Advanced features to increase system performance

• DDR4 Platform Benefits

DDR3 Platform* DDR4

12C Max Cores 18C

AVX(128b) Vector Inst. AVX2(256b)

8.0GT/s QPI 9.6GT/s

* DDR3 – ’13 SV Platform, DDR4 – ’14 SV Platform

• No interleaving delay w/ Bank group

1 2 3 4

5 6 7 8

1 2 5 6 3 4 7 8 9 10 13 14 11 12 15 16

DDR3 8Banks DDR4 16Banks(4BG)

DDR3_1866 DDR4_1866

1.16 1

16% @1866 tRRD

DDR4 4nCK

DDR3 5nCK(1bubble)

• 2x Bandwidth of DDR4 versus DDR3

B/W(Mbps)

DDR3 800~1600

DDR4 1600~3200

• tFAW limit-free of DDR4 : DDR4 512B page vs. DDR3 1KB page

1 2 3 4 5

1 2 3 4 8

DDR3

DDR4

tFAW

tFAW

* tFAW : Four Active Window CMD Set

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System Performance Comparison

Platform using DDR4 offers better performance

More benefit for the application requiring high capacity(Multi DPC)

1DPC 2DPC 3DPC

Max 42% Better

DDR3L 1600M

Source : Samsung SPEC_CPU Benchmark/DDR3L 1.35V vs. DDR4 1.2V/2Rank 16GB

1

1.42

DDR4 2133M

DDR3L 1333M

1

1.45

DDR4 1867M

Max 45% Better

DDR3L 800M

1

1.65

DDR4 1600M

Max 65% Better

42% 45% 65%

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Power Reduction of Core and I/O

Operating voltage is decreased from 1.5V(1.35V) to 1.2V

POD(Pseudo Open Drain) reduces I/O power

• Continuous decreasing of VDD - DDR4 1.2V, P ∝ V2

• POD Interface : half of I/O power

0 1 0 1 0 1 0

0 1 0 1 0 1 0

Term.

Term.

DDR4 POD Interface

DDR3 SSTL Interface

Power Consumption

*SSTL : Stub Series Terminated Logic

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Efficient Power Consumption

DDR4 is about 20% more power efficient against DDR3

1DPC 2DPC

Source : Samsung Power Benchmark/DDR3L 1.35V vs. DDR4 1.2V

DDR3 1600M

1 1.26

DDR4 2133M

26%

DDR3 1333M

1 1.20

DDR4 1867M

20%

26% Power Efficient 20% Power Efficient

[Performance/watt] [Performance/watt]

* Measured under controller’s POR condition w/ 2Rank 16GB RDIMM

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Features for High Reliability

DDR4 supports Write CRC and CA Parity for high reliability

• Write CRC helps to recognize multi-bits failures during transmission

• DDR4 can prevent mal-operation by CMD/ADD error

DDR3

DDR4

Data

Data Data C R C

x

x

x Failed data during data transmission

x

x

x

x

Wrong data will be written to DRAM

CRC check & re-request

DDR3

Controller

or

Register

Parity for CMD/ADD

* Once parity error occurs, DDR4 request CMD/ADD set again

DDR4

*CRC : Cyclic Redundancy Checking

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PPR(Post Package Repair)

Single bit and single row failure are repairable without any system power-off

Can repair half of function failures

Others 49%

Normal Rows Redundant Row

Recognizing

PPR

Restoring

Source : Samsung

Repairable by PPR(51%)

Single Bit Fail 37%

Single Row 14%

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DDR4 in Client Platform

Better performance(30%) and lower power(70%)

Sandra2014 Performance Test 8.0

Idle

Performance

Power Consumption

x1.0

x1.3

x1.0

x1.2

x1.0 x1.0

x0.7

Intel HEDT Launched

DDR3 DDR4 DDR3 DDR4

DD

R3

x0.8

DD

R4

DD

R3

DD

R4

Active

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Samsung DDR4 Line-up

DDR4 module solution for server application

Application DIMM Type Status

IA Server

Registered DIMM Production

Load Reduced DIMM Production

Micro Server ECC SODIMM Production

Application Type Status

Traditional Desktop / HEDT UDIMM Production

Ultrabook / AIO / NUC SODIMM Sampling

DDR4 module solution for client application

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Contents

1. Industry Trend





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Samsung’s Process Technology Journey

New DRAM process technology node every year

2znm new process product under mass production

8xnm

6xnm

5xnm

4xnm

3xnm

2xnm 2ynm

* Customer Sample shipping date for 1st product of each process node

Tom’s Hardware(Mar.’14)

Extreme Tech(Mar.’14)

Computerworld(Mar.’14)

2znm

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2znm DDR3 4Gb Status

2znm DDR3 4Gb is verified with Current Client platforms

Already in mass production with valuable customers

DIMM Type Density(Org.) Validation Result Status

Unbuffered SODIMM

4GB(1Rx8) Pass Production


Unbuffered DIMM



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2znm DDR4 8Gb Introduction

32GB RDIMM(8Gb) consumes 26% lower power than 32GB LRDIM(4Gb)

3% performance gain by eliminating data buffer

Delay From DB

RDIMM

LRDIMM

tPD from DB LRDIMM More Power

26% Power Saving 3%

Performance Gain

Power Performance

0.74

1.0 1.00

DD

R4

3

2G

B L

R

DD

R4

LR

D

DR

4

32

GB

LR

DD

R4

3

2G

B R

D

1.03

DD

R4

3

2G

B R

D

vs. DDR4(4Gb)

32GB LRDIMM DDR4(8Gb)

32GB RDIMM

32GB Comparision

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Contents

1. Industry Trend





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TSV technology for 3DS

Enables DRAM stacking with better electrical characteristics

TSV VIA

TSV Solutions

Master Chip

Memory Controller DRAM

(Master)

Integrated Buffer

Less I/O power

<4H TSV Package>

<3DS TSV RDIMM>

Conventional Stack Solutions

Wire-Bond RDL*

Memory Controller

DRAM

Data Buffer

<QDP Wire-bond Package>

<QDP LRDIMM>

Number of loading limits high speed operations

Only master chip communicates with controller regardless of number of stacking

Slave Chip

*RDL : Re-distribution Layer

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1 1 0.96

1 0.99 1.03

LR TSV TSV_LR

Power Efficiency of 3DS Solution

3DS solution shows similar performance to buffered solutions

Significant less power by removing additional ICs

*Performance: SPECjbb benchmark, Latency: ATE, Power: Samsung memory stress PGM @ system

1

0.81 1.04

DDP LRDIMM TSV RDIMM TSV LRDIMM

~24% ~28%

DDP 32GB LRDIMM

4H 3DS 64GB RDIMM

4H 3DS 64GB LRDIMM

DDP 32GB LRDIMM

4H 3DS 64GB RDIMM

4H 3DS 64GB LRDIMM

1 1.00 0.96

1 0.99 1.03

LR TSV TSV_LR

Bandwidth and Latency

Stream LMBench

1 1.00 0.96

1 0.99 1.03

LR TSV TSV_LR

Bandwidth and Latency

Stream LMBenchPerformance Latency

4H 3DS DRAM consumes same as conventional 2stack 3DS RDIMM performs the same as buffered solutions

Performance & Latency Power Consumption

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Unveiled 1st TSV product, 64GB RDIMM

64GB RDIMM with TSV is IN PRODUCTION

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Contents

1. Industry Trend





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Needs for Higher Performance Memory

High performance DRAM solution needed in N/W, GFX and HPC

Network Graphic HPC

• 200/400Gbit Ethernet from

Big Data : 6.6 Zetabyte in ‘16(CAGR 31%)

Connected Devices : 1 trillion in ‘16(IBM)

Internet speed goes up : LTE, LTE-A

• Higher B/W requirement

Look up Buffer : RLDRAM HBM

Packet Buffer : DDR3/4 HBM

Ethernet Solution

40/100Gbit DDR3 1866Mbps (x16 *8)

200Gb DDR4 2.8~3.2Gbps(x16 * 16)

400Gb HBM 100~200GB/s (1~2ea)

Overcome Uncanny Valley

200

4

200

5

200

6

200

7

200

8

200

9

201

0

201

1

201

2

201

3

201

4

201

5

201

6

201

7

201

8

201

9

202

0

’20, 60 Tera 3 Tera

GPU performance (Flops)

• Graphics Revolution

Improved 3D graphics, 4K Resolution, etc

Expanded use of GPGPU

• Memory B/W keep increasing

4.7Tera Flops in ‘13 : 288GB/s (GDDR5)

9.7Tera Flops in ‘15 : 600GB/s ↑

• GPGPU application enlargement

Expand from Super Computer to Server

. Shazam : Cloud Service using GPGPU accelerator

Core , Memory B/W increase

GPGPU Acceleration

Memory BW Increase

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HBM (High Bandwidth Memory) Concept

HBM has 8 channels with 1024 I/O, support up to 256GB/s • 2/4/8H HBM stacks can be supported with TSV technology

PCB

DRAM

Buffer Logic Processor

Si Interposer

Mother Board

[System side view using 4H HBM] [HBM Structure – 4H Case]

Buffer

DRAM

Channel 0 Channel 1

HBM is the unique solution to achieve higher B/W with low power

700

50

100

300

500

900

GD

DR5

HBM

2015 2016 2017 2018 2019

HBM x4ea

(1TB/s, 2Gbps)

GDDR5 x12ea

(384GB/s, 8Gbps)

[Memory Bandwidth, GB/s]

DDR3/4, WIO2

Bandwidth Requirement

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Thermal Management in 2.5D PKG is ready

[Temperature (°C] Buffer Die 1st DRAM Die 2nd DRAM Die 3rd DRAM Die 4th DRAM Die

PCB

DRAM

Buffer Logic Processor

Si Interposer

Mother Board

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Infrastructure Readiness for HBM

300mm wafer process line is ready for “Mass Production”

• Fab process qualification is completed with “State of the art” facilities

Bump Carrier Bond Back-side Pad Debond & Saw

FAB Post-FAB Assembly

TSV Stacking

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Samsung Memory for All Computing Device

Smart Phone

DDR4 /LPDDR3,4

DDR4

LPDDR3/4

GDDR5

understanding ddr4 and today’s dram frontier - … · 2014-10-16 · understanding ddr4 and...

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