unclassified ad number limitation changes 4011 device is slightly less susceptible than the bipolar...

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usnswc ltr, 26 mar 1984

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ELECTROMAGNETIC SUSCEPTIBILITY INVESTIGATION

PHASE n | ( ) 26^UL»#74

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^^^SID 5ATE|TUDY.\

SUBMITTED TO: CONTRACTING OFFICER

U.S. NAVAL WEAPONS LABORATORY DAHLGREN. VA. 22448

CONTRACT NO/|^l78-73-C-^62A

1 MAR U 1975

Samt Louis, Missouri 63166 (314)232 0232

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U

PREFACE

This document is one of eight task-oriented reports prepared under Contract No.

N00178-73-C-0362 for the U. S. Naval Weapons Laboratory, Dahlgren, Virginia 22448.

The McDonnell Douglas Astronautics Company personnel involved were:

J. M. Roe, Study Manager

J. R. Chott

C. E. Clous

V, R. Ditton

T. A. Niemeier

G. W. Renken

R. D. Von Rohr

j. A. Waite

This report was reviewed by J. R. Cummings.

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TABLE OF CONTENTS

Title PSSi

1. INTRODUCTION AND SUMMARY ^

2. MOS SUSCEPTIBILITY MEASUREMENTS 2

2.1 Experimental Plan 2.1.1 CMOS NAND Gate 2.1.2 4011 Test Circuit b

3. SUSCEPTIBILITY DATA COMPARISON FOR 7400 AND 4011 14

4. SUSCEPTIBILITY DATA ANALYSIS 16

4.1 4011 Input Circuit Analysis J6 4.2 4011 Output Circuit Analysis "

5. DATA ANALYSIS IMPLICATIONS 30

5.1 Similarity of 4011 and 7400 RF Effects 30 5.2 Relative Susceptibility of 4011 and 7400 30

6. CONCLUSIONS U

References ^

Appendix A - 4011/7400 INTERFERENCE DATA COMPARISON 36

Distribution List 49

List of Pages

Title

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1 through 53

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NTEGRATED CIRCUIT SUSCEPTIBILITY MDC E1101

26 JULY 1974

1. INTRODUCTION AND SUMMARY

The increasing availability of CMOS devices to military system designers

presents the possibility of significant differences from bipolar devices vis a vis A

RF susceptibility. This report documents a preliminary investigation into possible

differences between functionally similar devices (the 7400 bipolar NAND gate and

the 4011 CMOS NAND gate) at four frequencies: .22, .91, 3.0, and 5.6 GHz. While

it -^s difficult to compare the observed susceptibility modes, it appears that the

CMOS 4011 device is slightly less susceptible than the bipolar 7400 device. The

underlying susceptibility mechanism can be explained by rectification of the RF

signal in parasitic, and protective pn junctions as in the bipolar devices^, but

the circuit reaction to these rectified currents and voltages is different. V_£

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MDC E1101 26 JULY 1974

?. MOS SUSCEPTIBILITY MEASUREMENTS

In as much as MOS technology represents a growing segment of the integrated

circuit world (one recent estimate forecasts CMOS will outstrip TTL in usage by

1976), it has been planned from the inception of the IC program to study RF suscep-

tibility of MOS devices. As the measurement techniques and results from the

bipolar studies [1, 2, 3, 4] matured, it became highly desirable to determine

whether a system designer could gain a significant improvement in overall system RF

hardness by using MOS technology in lieu of bipolar technology. This part of the

program was designed to probe that possibility by measuring a CMOS NAND gate which

is functionally identical to the previously-studied 7400 bipolar NAND gate.

2.1 Experimental Plan - Devices manufactured by the MOS technology employ

significantly different fabrication techniques than those used in bipolar devices.

MOS technology can be roughly divided into three main subdivisions: p-channel, n-

channel and complementary. In addition there are many subtechnologies: silicon

gate, metal gate, dielectric isolated, etc. The complementary MOS devices (CMOS)

include both n-channel and p-channel devices on the same chip making them

particularly attractive for study. Most digital LMOS devices have been of the

enhancement mode type. The CMOS technology can also be used to manufacture both

digital and linear devices on the same chip. For these reasons a CNN NAND gate

(4011) was chosen for study.

2.1.1 CMOS NAND Gate - The 4011 is a quad 2-input NAND gatf having the same

schematic representation as the bipolar 7400 NAND gate, although they are not pin-

for-pin interchangeable. The circuit diagram for this NAND gate is shown in

figure 1. Also depicted in figure 1 are the current and voltage conventions used

for this device throughout this report. A photomicrograph of one of the four NAND

gates on the 4011 chip is shown in figure 2. CMOS devices have very high DC input

impedance (1012n and 5 pf). very low quiescent power drain (5nW), high noise

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MDC E1101 26 JULY 1974

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Figure 1 4011 SCHEMATIC AND CIRCUIT DIAGRAM

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immunity (30% of VDD) and the capability of operating from power supplies over the

range of 3 ^ 15 volts. Most CMOS devices are now fabricated with protective

circuits on all gate inputs and some outputs to integrate and clamp the device

voltage to a safe level. The breakdown voltage of the gate oxide is generally in

the order of 70 to 100 volts and because of the high resistance of this oxide, even

a very low energy source (static charge) is capable of damaging a device without

protection. Because of the low RF tine constants of these protective circuits,

they have no noticeable effect on circuit speed and do not interfere with normal

circuit operation.

2.1.2 4m Test Circuit - Only one of the four NAND gates on the 4011 chip was

invest.gated for RF susceptibility. A power supply voltage of 5 volts was chosen

for 4011 testing for ease of comparison with the 7400 data. Voltage and current

were measured for each of the five DC ports of the NAND gate. The bias circuitry

for the 4011 for all input/output conditions is shown in figure 3. The input

loading was chosen to simulate the nominal resistance of another CMOS device. The

output loading for each logic state was determined for the maximum source and sink

current specified. The automated measurement system used for 4011 interference

testing is shown in figure 4. This measurement system facilitates the collection

of the large amounts of data required for accurate RF susceptibility characterization

of ICs. The measurement system is discussed in the IC Susceptibility Test and

Measurement Systems Report [5]. The schematic diagram fo- the 4011 interference

measurement system is shown in figure 5.

There are five possible RF entry ports into the 4011 device: two identical

inputs, an output, the power supply (VDD) and ground (Vss). Since the inputs are

identical, the duplicate input port was not used for RF injection. All RF

measurements were performed with the 4011 DC biased in either the output high or

-f the output low case. No dynamic switching conditions were considered. Figure 6

shows the flow diagram for the 4011 RF interference testing. 5

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MDC E1101 26 JULY 1974

OUTPUT TO PRINTE»

"S/N". DEVICE S/N,

"P", "V

SET POWER COUNTER

1 • 1

SET CHANNEL COUNTER

n • 1

r-> READ SCANNER CHANNEL n

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As in 7400 interference testing, device parameters were measured for 20 RF

power levels. In 4011 testing however, one of the 20 RF power level measurements

is set aside for a DC parameter measurement (RF off). All device parameter

measurements for the 4011 with RF injection can then be compared with this RF

off case.

Preliminary 4011 susceptibility tests were performed at 910 MHz with RF

injected separately into all four device ports to determine the susceptible RF

injection ports. This testing indicated that only the input and output ports were

susceptible to RF energy (output logic state changes were experienced due to RF).

The power supply and ground RF injection ports were found to be not susceptible

(minimal output level changes at the maximum RF injection levels capable in the

automated test system). For this reason the susceptibility testing for these

unsusceptible ports was not pursued further.

Interference testing of the 4011 was then limited to 20 different RF power

levels for each device, with 5 devices at each susceptible RF injection port

(input and output), for each output logic state (output high and output low), at

each of four frequencies. An identification number was given to each device to

be tested. This number is entered into the measurement system manually and

identifies all cassette tape files, plots, data printouts, etc. All data

processing, printouts, and plots are generated from the tape cassette on an HP 9830A

computer. Figure 7 shows a data processing flow diagram for these data. A typical

data matrix printout is shown in Table 1. A typical data plot is shown in figure 8.

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3. SUSCEPTIBILITY DATA COMPARISON FOR 7400 and 4011

RF interference data on the 4011 were taken at four frequencies for the

injection ports and output logic states previously found to be susceptible. Data

plots of output voltage changes due to RF power for both the 4011 and the 7400 are

tabulated in Appendix A along with the input voltage and calibration factor plots.

The interference plots for identical 7400 and 4011 RF injection configurations are

shown together for comparison at each frequency. Table 2 outlines the major RF

effects produced on both the 7400 and the 4011 for comparison. The 7400 has four

susceptible configurations where a device may change output logic state due to RF

energy while the 4011 has only two susceptible configurations. Table 2 indicates

that there is one susceptible configuration coirmon to both the 4011 and 7400: RF

injected into the output port with the output low wbich, in both cases, •'c the most

susceptible configuration.

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TABLE 2

7400/4011 RF SUSCEPTIBILITY COMPARISON

RF INJECTION CONDITIONS

RF INTO INPUT - OUTPUT HIGH

RF INTO INPUT - OUTPUT LOW

RF INTO OUTPUT - OUTPUT HIGH

RF INTO OUTPUT - OUTPUT LOW

RF INTO POWER SUPPLY OUTPUT HIGH

RF INTO POWER SUPPLY OUTPUT LOW

RF INTO GROUND - OUTPUT HIGH

RF INTO GROUND - OUTPUT LOW

7400 RESPONSE

OUTPUT GOES LOW

NO EFFECT

SOME OUTPUTS GO LOW

SOME OUTPUTS GO HIGH

OUTPUT GOES HIGHER

OUTPUT INCREASES % .5V

SOME OUTPUTS GO LOW

SOME OUTPUTS INCREASE %1V

4011 RESPONSE

OUTPUT DECREASES S J5V

OUTPUT GOES HIGH

OUTPUT DECREASES « .4V

OUTPUT GOES HIGH

NOT SUSCEPTIBLE

NOT SUSCEPTIBLE

NOT SUSCEPTIBLE

NOT SUSCEPTIBLE

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MDC E1101

INTEGRATED CIRCUIT SUSCEPTIBILITY 26 JULY 1974

4. SUSCEPTIBILITY DATA ANALYSIS

The bipolar rectification model for RF effects, is based on RF signals being

rectified at various device pn junctions. The bipolar RF effects model is a

representation of an RF generated current source which can be characterized as

shown in figure 9. In the case of the 7400, there are many pn junctions on the 7400

chip, as well as many parasitics, as shown in figure 10. Each pn junction on the

chip can be replaced with the equivalent circuit of the model.

Numerous parasitic and protective diodes are present on the 4011 chip as shown

in figure 11. The parasitic junctions are inherent junctions formed in the actual

device fabrication due to isolation techniques. The manner in which parasitic

junctions are formed in a representative CMOS device is shown in figure 12.

Protective diodes in the case of CMOS devices are intentionally diffused junctions

into the over all device structure forming an input limiter circuit that provides

protectioi-« against static voltages. These diodes suggest a CMOS rectification theory

for RF effects similar to the 7400 RF effects rectification theory [1]. Both the

input and output circuitry of the 4011 are analyzed for their most susceptible

configurations using the concepts of the bipolar rectification model.

4.1 4011 Input Circuit Analysis - The DC bias circuitry for the 4011 NAND gate with

the output low is shown in figure 13 for RF injected into the input port. With high

levels of RF Injected into the input port, the input voltage decreases to a low input

state level (See Appendix A). The output voltage follows the input voltage changes

and Increases with increasing incident RF power to a specified high output state.

The input current also rises due to the Incident RF energy (from below our measure-

ment system capability to milliamps in some cases). This current is directly

attributable to the injected RF because the normal DC current into the gate with no

RF is approximately 10 pA. Using the concepts of the bipolar rectification theory,

pertinent pn junctions in the 4011 input circuit are replaced with RF effects models 16

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INPUT 1 O-

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OUTPUT

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and the proposed current loop is drawn as shown In figure 14. The proposed

current loop is inferred from the device and voltage variations as the incident RF

power is increased and from normal circuit theory. A measured RF generated current

of about 3.5 mA flows into the RF injection port at high RF injection levels at

220 MHz. This current drops the input voltage down below 2V causing the output

voltage to switch to a high output state. This effect is somewhat different from

the 7400 because the 4011 RF generated current source involves a different current

loop. The major RF generated current source in the 4011 is the input protective

diode to VDD shown in figure 14, The effects of the lower input diode (to Vss) may

become significant at higher RF injection levels when more RF energy is allowed

through the series resistor to this diode. The input current variations due to RF

can be plotted at each frequency vs incident power as shown in figure 15 (the

5.6 GHz data are below the measurement system noise level). The RF generated

currents are plotted with respect to incident power to be consistent with present

terminology in the detector field.

As shown in figure 15, the RF generated currents exhibit approximate square law

dependence at low RF levels and tend to saturate at high RF levels. The levels of

RF generated current decrease as the frequency increases. This behavior is quite

similar to well-founded measurements for microwave detector diodes. These 4011

data are also similar to the RF generated current data for the 7400 as shown in

figure 16. The differences in the RF generated current data for the 4011 and the

7400 are due to generator source impedance variations, area of rectifying junctions,

doping profiles, etc.

4.2 4011 Output Circuit Analysis - The DC bias circuitry for the 4011 NAND gate

with the output low is shown in figure 17 for RF injected into the output port. As

the injected RF level increases, the output level increases. Using the rectification

model and the voltage-current data, significant RF generated current sources are

22

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MDC E1101 INTEGRATED CIRCUIT SUSCEPTIBILITY 26 JULY 1974

Identified with their corresponding current loops as shown in figure 18. A MOS

device can be thought of as a voltage controlled resistor (the gate voltage

controlling the drain-to-source channel resistance). For a given gate voltage, the

channel resistance remains constant for low drain-to-source voltages.

Assuming a constant resistance for the two series n channel transistors to V^,

the rectification model predicts that the output voltage can be expressed as a

function of the RF power:

V - n x T /PCM ^ rRchannel * Rq(RFh vout Kfeuc VRF)] [Kchannel + R>n'

where ^anout = S1nk current of the 4011 *** the output low configuration.

Ig{RF) = RF generated equivalent Norton current source from the rectification

model.

Rg(RF) = equivalent source resistance of the above Norton current source from

the rectification model.

Rchannel = the series resistance of the two series n channel transistors ("on"

channel resistance from the output to Vss).

This expression for output voltage contains circuit characteristics (IF .),

device characteristics (Rchannel). and RF characteristics (I (RF), RG (RF)).

Further investigations of these functions will allow a greater understanding of the

total circuit RF susceptibility.

The preliminary measurements on the 4011 did not allow time for characterization

of Ia(RF) and Ra(RF) for a definitive model. However, assuming a constant resistance

for the two series n channels to Vss, an RF generated current can be calculated

using the output currents and voltages. The implied current which flows through

the two n channels raises the output voltage at 3 GHz to 3 volts. The RF generated

currents for the output low, output port injection case in the 4011 and the 7400

are similar. Both the 4011 and the 7400 RF generated currents have an approximate

27

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MDC E1101 26 JULY 1974

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INTEGRATED CIRCUIT SUSCE 3TIBILITY MOC El 101

26 JULY 1974

square law dependence, decrease with increasing frequency, and tend to saturate at

high RF levels. These similarities indicate that the bipolar rectification model

can reasonably be extended to include MOS devices (due to the presence of parasitic

and protective pn junctions).

29

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26 JULY 1974

5. DATA ANALYSIS IMPLICATIONS

The comparison of input voltage, output voltage, and calibration factor for the

4011 and the 7400 is tabulated in Appendix A. These data and the corresponding

analyses indicate the susceptibility mechanisms in the 4011 device and possible

generalizations to other MOS devices.

5'1 Similarity of 4011 and 7400 RF Effects - The rectification theory used for RF

effects in pn junctions in bipolar ICs has been shown to be directly applicable to

the parasitic and protective pn junctions in MOS ICs. This bipolar rectification

theory has been used to qualitatively explain all significant effects due to injected

RF on CMOS 4011 ICs. Additional testing and analyses are required to delineate

further this model for the 4011 and other CMOS devices. It now appears that the

MOS technology can be treated identically to the bipolar technology in terms of RF

susceptibility mechanisms.

5-2 Relative Susceptibility of 4011 and 7400 - The most susceptible configuration

for the 4011 is the output low with RF injected into the output port. This config-

uration is also the most susceptible one for the 7400. A comparison of these

configurations, as shown in figure 19, shows that the 7400 is generally more

susceptible than the 4011 by a factor of two, although a comparison of individual

devices may be quite different. These data are plotted with respect to absorbed

RF power in the chip. Calibration factor is essentially the difference in the

incident power to the device and the absorbed power in the chip, or the RF rejection

properties of the device. The calibration factor for the 7400 is slightly higher

than the calibration factor for the 4011 for their most susceptible configurations.

This indicates that the total 7400 susceptibility with respect to incident power

is slightly greater than the 4011. This is not surprising in light of the proposed

30

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MOC EUOl 26 JULY 1974

4011

RF INJECTED INTO OUTPUT PORT, OUTPUT LOW

220 MHz « m»m

^ 2 '" i—

SöH Wl '"-' .-:<

^j ■ ••" _ ^m

- em* ( -V"

m.mi 1 * ---r .

absorbed (mW)

910 MHz

«/>

c ■■• r-- ■ i

i

% 1

e 1

4-> =3 o

•

, ,mi

m i

• us — —

absorbed (mW)

3.0 GHz

o *e absorbed (ml^

5.6 GHz

m mmw -

■I

^ i

f

absorbed OnW)

7400 ??

M

• ? o JC- 1 ""' —«"

1

3 • *«•

O 5> , ...

r- _.-j- - "1 ^-y*

L" *'"""" !

■ ■■■ ( 1 ■-" T.

absorbed (mW)

910 MHz i a.« 1

.^ ^ •"

> • * " -i *V"

3 O

> f*' rf^

^.«^ ----- • --"**«-

1 . . ■» 1

absorbed (mW)

J. L

J3 4J

s •**

4-> 3 O >

. ■■■ **

«. --^4 ' — W» 4. •mm mm* • mwCSm -—ä-J

3.0 GHz

absorbed^

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jrt H«.

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K^vBff' 1 *^"*" , , . ,i | ■■-'

Figure 19 COMPARISON OF V t FOR 4011 and 7400 WITH RF INJECTED INTO OUTPUT PORT, OUTPUT LOW 31

isrivoM

■ ■ ' ■

Pabsorbed(mW)

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MDC EUOl 26 JULY 1974

rectification mechanisms. The total susceptibility is essentially the :ame for

both the 4011 and the 7400.

The similarity of the calibration factors shown in Appendix A for both devices

implies that the RF impedance of the 7400 and 4011 is essentially the same. This

is understandable due to the similarity in position of the parasitic diodes causing

rectification. These diodes probably determine the RF impedance of the corresponding

RF injection ports.

Actual RF input impedance limits of the 7400 and 4011 injection ports were

calculated from the calibration factor data. These calculations indicate the

maximum and minimum values of the real RF input impedances. The results for the

7400 and 4011 are shown in table 3. These results differ from the respective DC

impedances of these devices: 1012 ohm for the input port of the 4011 and 25 ohm for

the input port of the 7400. The source of the DC impedances and the corresponding

RF impedances are completely different, resulting in the apparent contradiction.

In addition the 4011 DC input impedance is 10 2 ohm with 5 pf. This capacitance

alone results in a 4011 input port impedance at 1 GHz of about 33 ohm.

<*

0

32

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MDC E1101 26 JULY 1974

RF INTO GATE INPUT

Table 3 IMPEDANCE RANGES FOR 4011 and 7400

FREQUENCY (GHz) 4011 IMPEDANCE RANGE 7400 IMPEDANCE RANGE

(n) (0)

0.22 ^\^ 14-182 ^>s\^ 9-290

25-102 ^^^^ 9-272 ^v.

^ 13-190 ^^^^^ 7-340

0.91 ^\^ ^^^.^^^

15-155 \^ 7-340 "^^

^\^ 15-171 ^S>S<, 12-205 3.0 ^^-s^ ^^^^

23-110 ^^^ 13-186 ^\

5.6 ^\. 15-166 ^^^^^^ 5-458

18-135 ^^v^ 4-693 ^\^

RF INTO GATE OUTPUT

■* r

KEY

FREQUENCY (GHz) 4011 IMPEDANCE RANGE (0)

7400 IMPEDANCE RANGE

(0)

0.22 ^"^^ 20-126

16-152 ^\^^

^^\^^ 5-458

5-458 ^\.

0.91

^"^«^ 13-199

9-272 ^^.

^^^v^^^ 2-1160

3-900 ^\^

3.0

^"^^^ 21-120

22-113 ^v^vv^

^"^^^^ 6-396

7-340 ^"^^^^^

5.6

^\^ 14-172

14-176 ^^^^^

^^^ 4-693

5-458 ^^^-v^^

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MDC E1101 28 JULY 1974

6. CONCLUSIONS

The 4011 is slightly less susceptible than the 7400 for their most susceptible

configurations (RF injected into the output with the output low). Analysis of RF

effects in the 4011 indicate that the RF signal is rectified at the device pn

junctions. All significant RF effects can be qualitatively explained using the

bipolar rectification theory from the 7400 analyses. All testing indicates

that the bipolar rectification theory applies also to MOS devices due to their

parasitic and protective pn junctions.

A complete characterization of the significant 4011 pn junctions is required

to substantiate all circuit reactions to RF interference. The characterization of

these junctions will lead to a model which can probably be extended to other CMOS

devices due to similarities in parasitic and protective diode junctions. These

similarities may allow a general RF effects model for all CMOS devices made by a

given manufacturer.

Further work is also required to examine the relative susceptibility of various

CMOS system interfaces. A CMOS-CMOS interface was simulated in the present RF

interference testing. Various other CMOS interfaces (CMOS-TTL, TTL-CMOS, HTL-CMOS,

etc.) should be studied on a system scale to determine an optimal logic system with

respect to RF susceptibility. Linear CMOS devices should also be studied to determine

if their RF effects are similar to digital CMOS devices.

All conclusions are constrained to the device, circuit, and assumptions

contained in this report. Additional testing and analyses are required to expand

and refine these results.

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MDC EUOl 26 JULY 1974

\~J REFERENCES

1. "Integrated Circuit Electromagnetic Susceptibility Investigation - Bipolar NAND Gate Study" MDC Report E 1123 dated 26 July 1974.. Prepared under contract No. N00178-73-C-0362 for the U. S. Naval Weapons Laboratory by McDonnell Douglas Astronautics Company - East, St. Louis, Missouri 63166.

2. "Integrated Circuit Electromagnetic Susceptibility Investigation - Development Phase Report" MDC E0690 dated 19 October 1972. Prepared under contract number N00178-72-C-0213 for the U. S. Naval Weapons Laboratory by McDonnell Douglas Astronautics Company - East, St. Louis, Missouri 63166

3. "Integrated Circuit Elrctromagnetic Susceptibility Investigation - Interim Report No. 1" MUC Report E0883 dated 24 August 1973. Prepared under contract number N00178-73-C-0362 for the U. S. Naval Weapons Laboratory by McDonnell Douglas Astronautics Company - East, St. Louis, Missouri 63166

4. "Integrated Circuit Electromagnetic Susceptibility Investigation - Interim Report Nu> 2" MDC Report EQ981 dated 28 December 1973. Prepared under contract number N00178-73-C-0362 for the U. S. Naval Weapons Laboratory by McDonnell Douglas Astronautics Company - East, St. Louis, Missouri 63166

5. "Integrated Circuit Electromagnetic Susceptibility Investigation - Test and Measurement Systems" MDC Report El099 dated 12 July 1974. Prepared under co ract number N00178-73-C-0362 for the U. S. Naval Weapons Laborator> oy McDonnell Douglas Astronautics Company - East, St. Louis, Missouri 63166

i: 35

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APPENDIX A

4011/7400 INTERFERENCE DATA COMPARISON

MDC E1101 26 JULY 1974

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U 4011/7400 INTERFERENCE DATA COMPARISON

RF INJECTED INTO INPUT, OUTPUT LOW

4011 220 MHz

H (AH»

I math

I PtClliW

< BlBl»

■-

0 J

D

-^ _"—r 4J 3 O > •

•• >. ^jp.^—1 »«««• ;*

absorbed (mW)

910 MHz

O

ö i i o >

44 3 .

absorbed (mW)

3.0 GHz

in ■p

4-> : .-i-ii- 3 O

'absorbed^

5.6 GHz

VI

3 o

1 . Mrf P1* " * ** Pf | ~" ' " ' i

IP" IB '

Pabsorbed^"1^

37

7400

MDC E1101 26 JULY 1974

220 MHz V ■■■

1 ,-. 4->

o >

? ..» +-> 3 O >

fl H.B •■•••^^•w — 1 1

P . , .(mW) absorbed

910 MHz

3 O 2 BBB-

-<-—•%."».•».•••#» -

^bsorbed^"^ 3.0 GHz

w

> ,,,^*

3

n RB» J»- ^r fjmrjm artrmmm

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4011/7400 INTERFERENCE DATA COMPARISON RF INJECTED INTO INPUT, OUTPUT HIGH

« ■••r

10

4011 220 MHz

'

\hsorbed{nM)

910 MHz I a>mm

> »» m m j

(/) H laytm

* 4J

O ; am» s» 11 s >■■ 3 O

ei HBIB

absorbed (mW)

3.0 GHz S BBiet

H 000

3 010»

\ * • MMMM »MMMM^t

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'absorbed(niW)

5.6 GHz ■ ^^w^ , N rp-B»*

1— ""

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,absorbed(mW)

38 /WCOOAHVf Lf. OOC/OCAS

7400

1 . ' ~ -

■.a

i.. ■ — _ _

... 1 .

MDC E1101 26 JULY 1974

220 MHz

.•^♦r

Pabsorbed(mW)

910 MHz

3 O

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i.i i ■ I . P I* '

'absorbed^^

t.a

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— ) -1

Pabsorbed(mW)

5.6 GHz

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i - ■

-^**m*mmm """■ÜP


4011/7400 INTERFERENCE DATA COMPARISON RF INJECTED INTO OUTPUT, OUTPUT LOW

U 4011 220 MHz

& mmm

, ft

—_» > -Arts'

-:^ "" ...M

■**

o

* wi ! ■ - * ^ p-

absorbed (mW)

7400

910 MHz s. 00»i

fmt V)

*-> o > f —

■p • 3 O >

; « • t .«•••• ,

absorbed (mW)

3.0 GHz

5.6 GHz

absorbed1

O

s am»

J i* /h

^r: .'Jr --T-

.BBcssr --^ .-v-

-*"•-!•-"

MDC E1101 26 JULY 1974

220 MHz

Kf1 ii'

absorbed (mW)

910 MHz s tatj

_^

0 3 aaa

1 BBS

o >

3 O >

- * *>• ^ ^

--i r...^-. i ^- ■ ■ ̂ -"■■L-JäT—* »

^

absorbed (mW)

o >•

3 O

C BIB ^» u

'

B.BBB

m ^-M •mm mm* 1M JBSr '

3.0 GHz

absorbed

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o

•M

o >

**m ■ ■■> —i ^—

L*'

(mW)

5.6 GHz

IB ' Ii IB * IB

39 absorbed im)

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wmmmmmmmmmmmm^


4011/7400 INTERFERENCE DATA COMPARISON RF INJECTED INTO OUTPUT, OUTPUT HIGH

MDC E1101 26 JULY 1974

4011 220 MHz

to 4-»

O

3 a. M» O

_•*• tarn ~mmm*\ B«*>^^ 1

—.-

.»-'

I/) ■•->

'S

5

a

3 O

absorbed (mW)

910 MHz E H0B-

* • »•

■ ■■»

Pabsorbed(mW)

3.0 GHz

«nv*^

absorbed^mW^

5.6 GHz ■ .■■»I

^^

absorbed (mW)

40

7400 220 1

i- *< r -.^>. 1 U) , T - - " ITrf t "

Äii; - -. h.-

z ..Jrf^-- -., •--, 4J

o 2 Ha"

a ■■»

absorbed (mW)

910 MHz

3 i O

G BB»

.. « * H BBB «•i * t»

■

-8* JC- 3 EIS ö#te -•t 1

. ....[

absorbed

O 2 HBB

3.0 GHz

_ •'Ti

•-

absorbed (mW)

, , — 0.0

JJ M BM{

o .-•B^ "^■iiiiffiar *■*

■M

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absorbed*1*'

::

(mW)

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! INTEGRATED CIRCUIT SUSCEPTIBILITY

4011/7400 INTERFERENCE DATA COMPARISON RF INJECTED INTO INPUT. OUTPUT LOW

MDC E1101 26 JULY 1974

U Ami 99n MU, 7400 220 MHz

i n it M +J

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>

• a

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(—1 - •-. •, ...,.H

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Pabsorbed(mW) 1"' ll* I»' 1« '

P absorbe

MHz 910 MHz

910 % aoAr MM» m m

c ••- a ■

>

i a

~—^^Ai ^-N

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l/>

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£ ,aaB

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Pabsorbed^ II

Pabsorbed(mW)

o n nu-. o n PU-

5 PM| #•

•* 3 - I "

> ■

J*''*V ̂ - - r^a 43 ,-*t: O * *'^'u-

'-' c --*

> -^ *

f . »»p-aO - •

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5.6 GHz 1 rr^-

i ■" !■ * ii ' i

F i • n»

absorbed(mW)

5.6 GHz L-

5 H,

> 1 ■

^fcäN 'ÜT - "•*

•

"^ ^ 5 f— *■' I

1 1 . .

c '"

> „,

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41

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absorb e>)

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imrnv. .1 .1 iw ■wiiii



MOC EUOl 26 JULY 1974

4011 220 M» ^ V)

>

c :>,

._> ~**h**£~.\ 1.-' ..» !•< ,.■ "«gl

pabsorbed^

j3 *' O 1 aa»

4

910 MHz

absorbed (mW)

3.0 GHz

ui

-i—

■

absorbed (mW)

5.6 GHz

^^^ *- rrri-

c

'absorbed ^^

42

7400

•M

-

ri** ►>*■■"•

|

i a« .

.I1-^ 1*

Et*^

icrr":- •. •* "^•n.

—1 1—,

220 MHz

absorbed (mW,

910 MHz

S"**

, »if*^ i

t^ r

m"~'~m

absorbed

2 ■

1 S

i n

■ .«

n ■

3.0

■M

^^ c

> •

^ _»T" H^

" • . .

Pabsorbed(mW)

5.6 GHz

. , I I

I«"' II ' 11 ' I«

absorbed (mW)

KJ\

(mW) (J

I

AffCOO/WMCCl. DOl/OLAS ASTWOttACyT-fCS COAtm/VK • CAST

■PP^-r- i mmmmmffm^mm'-

INTEGRATED CIRCUIT SUSCEPTIBILITY 4011/7400 INTERFERENCE DATA COMPARISON

RF INJECTED INTO OUTPUT. OUTPUT LOW

u 4011 220 MHz " "—■ ■■^

^ .

z>

>

pabsorbed(mW)

910 MHz ' "'"

M ■p

o ,"'" >

c •r-

P absorbed

■ ■

(mW)

'r 3.0 GHz

0 i 1

c

i= absorbed

5.6 GHz

(/) M 1800

PabsorbedW

7400

MDC E1101 26 JULY 1974

220 MHz s •

O

^_ I . .—I 1

Pabsorbed(,nW)

910 MHz

■»->

o

S B

,

M U

i

- ■ i

..

m " IB '

Pabsorbed(mW)

3.0 GHz

P , . .(mW) absorbedx

5.6 GHz

o ,,

■

;

-•

1, . l ... ._

43 Pabsorbed(mW)

AffCOOMW«.«. OOUOLAm ASTtfOM/HJTICS COM^AMV • MMMT

mm mmu ..

mum«' ' "■'"■'"■■w11- ' ■' " J


4011/7400 INTERFERENCE DATA COMPARISON RF INJECTED INTO OUTPUT. OUTPUT HIGH

4011 220 Ml

"v) ■»->

0 ■, mm-

•^• >

.: .'.. I 1

I/)

4J

in

4 I

absorbed (mW)

910 MHz

«1 ciei» ■ MB-

absorbed (ITW)

3.0 GHz

:

•

-I—r—1 P . . .(mW)

absorbedv '

5.6 GHz

absorbed (mW)

44

7400

MDC E1101 26 JULY 1974

220 MHz

CO +J

'S

to 4J

O

10 4J

.^c ^^^. , j m»*~-

absorbed (mW)

910 MHz

I»"1 It* 1» ' IB '

absorbed (mW)

3.0 GHz

!■ * I.

absorbed (mW)

5.6 GHz

Pabsorted(mW)

lUCOOHNrLL DOC/OLAS ASTWOMAI/TVCS COIHfAHIV > mamT

'mmmmmmmm^mmmim^^

INTEGRATED CIRCUIT SUSCEPTIBILITY 4011/7400 INTERFERENCE DATA COMPARISON

RF INJECTED INTO INPUT, OUTPUT LOW

1 4011 220 MHz

CO

0 IH ■»

y 4 !■■■■ E

g,...

a! '"t a

CQ

Q IN.mmm

y

o

i 00

i ■ IP-'

^^ « ■■•

■ < u. ■■_••• z »—t

"«■

< ^r I ■T^^, -I . 1 5 L-' I.» !■ ' I« ' .1

^ P f absorbedv rrW]

S 910 MHz -o

oe.

u ^ ....

■

"al )sorbed (mW)

3.0 GHz

absorbed (mW)

5.6 GHz

%^Hfc%| BWmBHI MNRMK

absorbed (mW)

7400

M0C E1101 26 JULY 1974

220 MHz CQ T3

QC o

<

2 GO

-

% ^

*» *^

K- "^•Sfc

^^ "^ "■' .-' ■•• 1.' .«• li

Pabsorbed^

910 MHz

« 31

1*

1

QC O l- o s ;, ■V

V^MfeJ 1-

CO

■v V

%N».. 1—«

_l "I o

I.'

absorbed (mW)

CO ■o

OH : O

o

CQ i—i

<! o

—I 3.0 QHz

■ i- ^T^L

i

V*."*? KV«K«MM.

«

o

2 OS

IV. ^r^T^v

'absorbed(niW)

5.6 GHz

45 absorbed (triW)

MCOOMMmu. oouaLM» ASTitoMAUTica con*i**MV • a*mr

■

mmmm j. i i mMmmmmm^^mm^^mmmw^ ' HI i.i«up«yi||.



7400 i on o t- o <

i QO I—*

3

4011 220 M

m.mmm "- —

CQ

e

2 CO

absorbed (mW)

910 MHz

CO T3

MDC E1101 26 JULY 1974

220 MHz

PabSorbed(mW)

ro 3.0 Gh

•o

>M.a»

p G s § 1—1

I CD « %%%% k**%%<(, w -I <

IP"' I«' !■' !•* 1

P absorbe(

m 5.6 6 Hz -o

O

| s o

■ .■■■

mumm

t s- oo Ull!'lMlttK*l U> U» JUl

'absorbed^ 46

O I« M I—

CO

^C "^ 1 •• • * ••

Pabsorbed(mW)

CQ ■a »

O 3H

910 MHz

CO rtvwtw«^-* .L_ j I

I • II' I

p absorbed

(mW)

CQ "O

oc o I— u

2 CQ

3.0 GHz

m^w^v .VM

I» ' M tl '

(mW)

CQ ■o

Qi O I- O

O 12 I—I

i < • O ia

absorbed

5.6 GHz

Pabsorbed(mW)

0

Ü

ntcooMivmLL oouat-A» Am-moMJtuTics coMfMMY > m/tmr

mmrmmm mmmm 11«

U


4011/7400 INTERFEREMCF DATA COMPARISON RF INJECTED INTO OUTPUT. OUTPUT LOW

~ 7400

MDC E1101 26 JULY 1974

■o

QC

U [^ nail

2

5 x

ir"

4011 220 MHz

tx. o 1- o

IB ■■• 2 •—1 »—

■ -■■•

m mm»

?? CO 1—1 ^ «« "

P . . .(mW) absorbed

910 MHz

i»"' i» • i*

Pabsorbed^

Ä 3.0 GHz -O " "•

OC 1M.SBB o t .... B g .... 1 .... s CQ •>«««| •» ^ ",r-' i. ' i. ' i. ' '

absorbe 'OnW

m 5*t GHz *— K

^

z M

fc CO

—i . ...

Pabsorbed(nW)

47

CQ T3

OH O I-

3

220 MHz

co •a

o

CO

00 ■o

B o

2 CO »—(

CQ

O

pabsorbed(mW)

910 MHz

M n

r^Tiv^^^JÄ. -^

I. I. ' I. '

P K ^K -(mW) absorbsa

3.0 GHz 1 _ ... :.

<x> LHk.%^ -j

.

Pabsorbedf"*1)

y

o >«

i . 00

t-. _

-Vj ■ rVl VANV .vÄäfa - »

5.6 GHz

absorbed (mW)

nucooMMmLL oouoLJkm A»TmoM*uTica contrAMY - mMmr

„. i

^mimmmmmmmmmmmKKHfi»fß^'^^^mn m't[lm»',nm," ■' .«miwiijwwiiiwi «M


4011/7400 INTERFERENCE DATA COMPARISON RF INJECTED INTO OUTPUT, OUTPUT HIGH

MDC E1101 26 JULY 1974

«

o u

o I—I 11.■■»

i • i .

«

s

CQ

O

CQ ■o

o

2 CQ

CQ ■o

Q£ O I— O <

!■"'

2 ■■ I . CO i—< 3 ,,

4011 220 MHz

.■ •

Pabsorbed^)

910 MHz

V.flM * •%• 4k< »« •

absorbed (mW)

3.0 GHz

■ .■■« : . »••«

absorbed (mW)

5.6 GHz

RPI*

Pabsorbed(niW)

48

CQ T3

Q

O

7400 220 MHz

»T

o <>

CQ

-aw*-" •». t

5t absorbed (mW)

CQ X) »

910 MHz

CO

^vJ ^vw« ̂ -Ä %-^ ••i

***•■ ^

P absorbed (mW)

CQ

11

■

■

-"3.0

cd O 1- ■ — --

< . u.

o l-H

^««•1. 2 v \ %, ̂ x** >Ä5Ä CO -•«.»■«. % "t ■!■»

< o Pabsorbe'."nW^

CQ ■o

CXI p

5.6 GHz

o i« -r^jc

CQ

*%«lf **

> jpgC fi^f •." " -Al WkVKVS ?vWÄt

Pabsorbed(mW)

AffCOOMMCC«. OOC/OLA« AmT990HAUT§cm OOAfRA/VK - CASI

_.. ... —..^^. . —^....^

»mmm '^m^mmmm^^im^minmm


MDC E1101 26 JULY 1974

u DISTRIBUTION

Executive Office of the President Office of Teleconmunications Policy Washington, D. C. 20504

ODDR&E Assistant Director (E&PS) Attn: Dr. George H. Heilmeier Pentagon, Room 3D1079 Washington, D. C. 20301

Director, Defense Nuclear Agency Attn: RAEV (Maj. W. Adams) Washington, D. C. 20305

Chief of Naval Operations Attn: OP-932

0P-932C Washington, D. C. 20350

Chief of Naval Material Attn: MAT-03423 (Lt. R. Birchfield)

PM7T Washington, Q. C. 20360

Headquarters, U. S. Air Force (RDPE) Attn: Lt. Col. A. J. Bills The Pentagon, Room 4D267 Washington, D. C. 20330

Commanding General, U. S. Army Electronics Command Attn: AMSEL-TL-I (R. A. Gerhold)

NL-C (J. O'Neil) Ft. Monmouth, New Jersey 07703

Commander, Naval Air Systems Command Attn: AIR-360G (A. D. Klein) Washington, D. C. 20360

Commander, Naval Electronic Systems Cornnand Attn: NAVELEX-095

NAVELEX-3041 (J. A. Cauffman) NAVELEX-3044 (Navy Member: Advisory Group on Electron Devices,

Working Group on Low Power Devices) NAVELEX-3108 (D. G. Sweet) NAVELEX-5032 (C. W. Neill)

Washington, D. C. 20360

Commander, Naval Sea Systems Command Attn: SEA-034

SEA-0341 SEA-06G


Mcoowwcf-i. oouat-Mm amrmoMAUTic» COMMA/VV - KMmr

J

■LIWUIMHJIII .OT.W...M.. . i i . i. ll!HI|H|«ni«||||pMiV^^<imiH^-MmnMmP^«PHMIMR|i^«aW

1 :


26 JULY 1974

Conmander, Rome Air Development Center Attn: RB (J. Scherer)

RBC1 (J. Smith) RBCT (H. Hewitt)

GriffIss Air Force Base New York 13440

Commander, Air Force Avionics Laboratory Attn: AFHL/TEA (H. H. Steenbergen) Wright-Patterson A.F.B., Ohio 45433

Director, Avionics Engineering Attn: EA (C. Seth) Wright-Patterson A.F.B. Dayton, Ohio 45433

Commander, Kirtland Air Force Base Attn: AFWL/DYX (Dr. D. C. Wunsch) New Mexico 87117

Commanding Officer, Harry Diamond Laboratory Attn: J. Sweton

W. L. Vault H. Dropkin


Conmander, Naval Electronics Laboratory Center Attn: Code 4800 (Dr. D. W. McQuitty)

(A. R. Hart) San Diego, California 92152

Commander, Naval Ordnance Laboratory Attn: Code 431 (Dr. M. Petree)

(Dr. J. Malloy) (R. Haislmaier)

White Oak Silver Springs, Maryland 20910

Commander, Naval Weapons Center Attn: Code 5531 (D. Cobb)

Code 5535 (H. R. Blecha) China Lake, California 93555

Reliability Analysis Center Rome Air Development Center Attn: RBRAC (I. Krulac) Griffiss Air Force Base, New York 13441

Commanding Officer, Electromagnetic Compatibility Analysis Center (ECAC)

Attn: CDR Case J. Atkinson

North Severn Annapolis, Maryland 21402

50

O

AffCOOWAWL«. uncm coMMAwv- mjkmr

— - in hM niimitlTii - ^..

KIWWWWWWWPWÜ mmmm ii i ..juMavHppiui

I *■

o


Department of the Navy Attn: Code 7624 (J. Ramsey) Naval Ammunition Depot Crane, Indiana 47522

Commander, Naval Electronics Systems Test and Evaluation Facility

Attn: M. Gullberg Webster Field St. Intgoes, Maryland 20684

Naval Post Graduate School Attn: Code AB (Dr. R. Adler) Monterey, California 93940

National Bureau of Standards Attn: J. French

H. Schafft Washington, D. C. 20234

Dr. James Whalen, Room 2B 4232 Ridge Lea Road State University of New York at Buffalo Amherst, New York 14226

The Rand Corporation Attn: A. L. Hiebert 1700 Main St. Santa Monica, California 90406

Fairchild Research and Development Attn: Dr. J. M. Early M/S 30-0200 4001 Miranda Ave. Palo Alto, California 94303

RCA Laboratories Director, Solid State Technology Center Attn: Dr. G. B. Herzog Princeton, New Jersey 08540

Mr. J. S. Kilby 5924 Royal Lane Suite 150 Dallas, Texas 75230

Dr. Gordon E. Moore, V.P. Intel Corp. 3065 Bowers Road Santa Clara. California 95051

51

M0C E1101 26 JULY 1974

IMCOOMM«.!. OOVOI-A« *STOTOAMt/TVO* COMMAWV M«r

,.w . ^.^.^ ^^..■. ■^■.^ . .^ ■^■.■J^._. _. „^

-~**mmmm-' > iiii,m.u_in..wmimiii.jn.ini^**m*^mmm^**<wuww M IIIHWISIIIIHJ i iiiimmm^m

1 MDC E1I01

INTEGRATED CIRCUIT SUSCEPTIBILITY 26 JULY 1974

Bell Telephone Laboratories Attn: Dr. G. E. Smith Unipolar Design Department 600 Mountain Avenue Murray Hill, New Jersey 07974

Automation Industries Vitro Laboratories Division Attn: T. H. Miller 14000 Georgia Ave. Silver Springs, Maryland 20910

Braddock, Dunn, and McDonald, Inc. Attn: J. Schwartz First National Bank-East (17th Floor) Albuquerque, New Mexico 87108

R&D Associates Attn: Dr. W. Graham P. 0. Box 3480 Santa Monica, California 90406

Illinois Institute of Technology Research Institute Attn: Dr. Weber 10 West 35th St. Chicago, Illinois 60616 o Research Triangle Institute Attn: Dr. M. Simons

Dr. Burger Research Triangle Park, North Carolina 27709

Defense Documentation Center Cameron Station Alexandria, Virginia 22314

Secretariat, Advisory Group on Electron Devices Attn: W. Kramer, Working Group B 201 Varick St. New York, New York 10014

52

iwinHiiiii 111114.1 ^mmmmimmr ^mmmmm***^^** wmm*m*»w\. MI I. I \mmm^*mmmm

Ü INTEGRATED CIRCUIT SUSCEPTIBILITY

LOCAL DISTRIBUTION

C

D

HOC E1101 26 JULY 1974

□

EPA/Hooker

F

FC

FE

F6

FV

FVE

FVN

FVR

G

GB

GBP

GBR

MIL

MIM

AffCOOWM«

53

tt OOISOLA« MmrmoMJumcm COH****IV

-^»^^^--^--^-.^ .w.-..-.'. ,. ■ ii^Miii^rM

unclassified ad number limitation changes 4011 device is slightly less susceptible than the bipolar...

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