ultra low current low noise amplifier for l2/l5 gnss

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BGAN Ultra Low Current Low Noise Amplifier for L/L GNSS Applications Features Operation frequencies: to MHz Ultra low current consumption: . mA Wide supply voltage range: . V to . V High insertion power gain: . dB Low noise figure: . dB kV HBM ESD protection (inluding AI pin) Ultra small and RoHS/WEEE compliant package . x . mm Potential Application The BGAN is designed to enhance GNSS signal sensitivity for band L/L especially in wearables and mobile cellular IoT applications. With the very good performance it ensures high system sensitivity. The ultra low power consumption of .mW preserves valuable battery power, ideal for small battery powered GNSS devices. The wide supply voltage range from . V to . V ensure flexible design and high compatibility. Besides GPS L and L, the GNSS LNA also covers Galileo Ea, Eb, E, Glonass G, G, Beidou B, B and IRNSS/NAVIC bands. Product Validation Qualified for industrial applications according to the relevant tests of JEDEC//. Block diagram AI AO GND ESD VCC PON Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision . --

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Page 1: Ultra Low Current Low Noise Amplifier for L2/L5 GNSS

BGA125N6Ultra Low Current Low Noise Ampli f ier for L2/L5 GNSS Appl icat ions

Features

• Operation frequencies: 1164 to 1300 MHz• Ultra low current consumption: 1.3 mA• Wide supply voltage range: 1.1 V to 3.3 V• High insertion power gain: 20.0 dB• Low noise figure: 0.80 dB• 2 kV HBM ESD protection (inluding AI pin)• Ultra small and RoHS/WEEE compliant package 0.7 x 1.1mm2

Potential Application

The BGA125N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially in wearables and mobilecellular IoT applications. With the very good performance it ensures high system sensitivity. The ultra low powerconsumption of 1.5mWpreserves valuable battery power, ideal for small battery poweredGNSSdevices. Thewidesupply voltage range from 1.1 V to 3.3 V ensure flexible design and high compatibility. Besides GPS L2 and L5, theGNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2, Beidou B3, B2 and IRNSS/NAVIC bands.

Product Validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Block diagram

AI AO

GND

ESD

VCC PON

Datasheetwww.infineon.com

Please read the Important Notice and Warnings at the end of this document Revision 2.12021-02-22

Page 2: Ultra Low Current Low Noise Amplifier for L2/L5 GNSS

BGA125N6Ultra Low Current Low Noise Amplifier for L2/L5 GNSS ApplicationsTable of Contents

Table of Contents

Table of Contents 1

1 Features 2

2 MaximumRatings 3

3 Electrical Characteristics 4

4 Application Information 7

5 Package Information 9

Datasheet 1 Revision 2.12021-02-22

Page 3: Ultra Low Current Low Noise Amplifier for L2/L5 GNSS

BGA125N6Ultra Low Current Low Noise Amplifier for L2/L5 GNSS ApplicationsFeatures

1 Features

• Operation frequencies: 1164 to 1300 MHz• Ultra low current consumption: 1.3 mA• Wide supply voltage range: 1.1 V to 3.3 V• High insertion power gain: 20.0 dB• Low noise figure: 0.80 dB• 2 kV HBM ESD protection (inluding AI pin)• Only one external matching component needed• Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)

• RoHS/WEEE compliant package

Description

The BGA125N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially in wearables andmobile cellular IoTapplications. With the very good performance it ensures high system sensitivity. The ultra low power consumption of 1.5mWpreserves valuable battery power, ideal for small battery powered GNSS devices. The wide supply voltage range from 1.1 V to3.3 V ensure flexible design and high compatibility. Besides GPS L2 and L5, the GNSS LNA also covers Galileo E5a, E5b, E6,Glonass G3, G2, Beidou B3, B2 and IRNSS/NAVIC bands. The BGA125N6 LNA is manufactured in Infineon’s patented bipolartechnology.The device has a very small size of only 0.7 x 1.1 mm2 and amaximum height of 0.375 mm.The device configuration is shown in Fig. 1.

AI AO

GND

ESD

VCC PON

Figure 1: BGA125N6Block diagram

Product Name Marking PackageBGA125N6 7 PG-TSNP-6-2

Datasheet 2 Revision 2.12021-02-22

Page 4: Ultra Low Current Low Noise Amplifier for L2/L5 GNSS

BGA125N6Ultra Low Current Low Noise Amplifier for L2/L5 GNSS ApplicationsMaximumRatings

2 MaximumRatings

Table 1: MaximumRatings

Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max.

Voltage at pin VCC VCC -0.3 – 3.6 V 1

Voltage at pin AI VAI -0.3 – 0.9 V –Voltage at pin AO VAO -0.3 – VCC + 0.3 V –Voltage at pin PON VPON -0.3 – VCC + 0.3 V –Voltage at pin GND VGND -0.3 – 0.3 V –Current into pin VCC ICC – – 9 mA –RF input power PIN – – +25 dBm 2

Total power dissipation Ptot – – 60 mW –Junction temperature TJ – – 150 C –Ambient temperature range TA -40 – 85 C –Storage temperature range TSTG -55 – 150 C –ESD capability, HBM VESD_HBM -2000 – +2000 V 3

1All voltages refer to GND-Nodes unless otherwise noted2Tested at max VCC/VPON, 85C and for 60 minutes3Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1.5 kΩ, C = 100 pF)

Warning: Stresses above themax. values listedheremaycausepermanentdamage to thedevice. Maximumratingsareabsolute ratings; exceeding only oneof these valuesmay cause irreversible damage to the integrated circuit. Exposureto conditions at or belowabsolutemaximum rating but above the specifiedmaximumoperation conditionsmay aectdevice reliability and life time. Functionality of the device might not be given under these conditions.

Datasheet 3 Revision 2.12021-02-22

Page 5: Ultra Low Current Low Noise Amplifier for L2/L5 GNSS

BGA125N6Ultra Low Current Low Noise Amplifier for L2/L5 GNSS ApplicationsElectrical Characteristics

3 Electrical Characteristics

Table 3: Electrical Characteristics at TA = 25 C, VCC = 1.2 V, f = 1164– 1300MHz

Parameter1 Symbol Values Unit Note / Test ConditionMin. Typ. Max.

Supply Voltage VCC 1.1 1.2 3.3 V –

Supply Current ICC– 1.3 1.65 mA ON-Mode– 0.2 3 µA OFF-Mode

Power on Voltage VPON1.1 – VCC V ON-Mode0.0 – 0.4 V OFF-Mode

Power on Current IPON– 1.5 3 µA ON-Mode– – 1 µA OFF-Mode

Insertion Power Gainf = 1176 MHz

|S21|2 17.6 19.6 21.6 dB ON-Mode

Noise Figure2

f = 1176 MHz ZS = 50ΩNF – 0.85 1.25 dB ON-Mode

Input return loss3

f = 1176 MHzRLIN 8.5 11 – dB ON-Mode

Output return loss3

f = 1176 MHzRLOUT 10 15 – dB ON-Mode

Reverse isolation3

f = 1176 MHz1/|S21|2 25 40 – dB ON-Mode

Power up settling time4 5 tS – 9 12 µs OFF- to ON-ModeInband input 1dB-compressionpoint3

f = 1176 MHz

IP1dB -21 -17 – dBm ON-Mode

Inband input 3rd-order interceptpoint3 6

IIP3 -20 -15 – dBm ON-Mode

Out of band input 3rd-order in-tercept point5 7

IIP3OOB -3 2 – dBm ON-Mode

Stability5 k >1 – – f=20MHz–10 GHz

1Based on application described in chapter 42PCB losses are substrated3Verification based on AQL; not 100% tested in production4LNA gain changed to 90% of final gain value (in dB)5Guaranteed by device design; not tested in production6Inband@ 1176 MHz, Input power = −30 dBm for each tone, 1 MHz tone distance7f1 = 1785MHz, f2 = 2401MHz, Input power = −20 dBm for each tone

Datasheet 4 Revision 2.12021-02-22

Page 6: Ultra Low Current Low Noise Amplifier for L2/L5 GNSS

BGA125N6Ultra Low Current Low Noise Amplifier for L2/L5 GNSS ApplicationsElectrical Characteristics

Table 4: Electrical Characteristics at TA = 25 C, VCC = 1.8 V, f = 1164– 1300MHz

Parameter1 Symbol Values Unit Note / Test ConditionMin. Typ. Max.

Supply Voltage VCC 1.1 1.8 3.3 V –

Supply Current ICC– 1.35 1.7 mA ON-Mode– 0.2 3 µA OFF-Mode

Power on Voltage VPON1.1 – VCC V ON-Mode0.0 – 0.4 V OFF-Mode

Power on Current IPON– 1.5 3 µA ON-Mode– – 1 µA OFF-Mode

Insertion Power Gainf = 1176 MHz

|S21|2 18.0 20.0 22.0 dB ON-Mode

Noise Figure2

f = 1176 MHz ZS = 50ΩNF – 0.80 1.20 dB ON-Mode

Input return loss3

f = 1176 MHzRLIN 8.5 11 – dB ON-Mode

Output return loss3

f = 1176 MHzRLOUT 10 14 – dB ON-Mode

Reverse isolation3

f = 1176 MHz1/|S21|2 25 40 – dB ON-Mode

Power up settling time4 5 tS – 8 11 µs OFF- to ON-ModeInband input 1dB-compressionpoint3

f = 1176 MHz

IP1dB -19 -15 – dBm ON-Mode

Inband input 3rd-order interceptpoint3 6

IIP3 -20 -15 – dBm ON-Mode

Out of band input 3rd-order in-tercept point5 7

IIP3OOB -3 2 – dBm ON-Mode

Stability5 k >1 – – f=20MHz–10 GHz

1Based on application described in chapter 42PCB losses are substrated3Verification based on AQL; not 100% tested in production4LNA gain changed to 90% of final gain value (in dB)5Guaranteed by device design; not tested in production6Inband@ 1176 MHz, Input power = −30 dBm for each tone, 1 MHz tone distance7f1 = 1785MHz, f2 = 2401MHz, Input power = −20 dBm for each tone

Datasheet 5 Revision 2.12021-02-22

Page 7: Ultra Low Current Low Noise Amplifier for L2/L5 GNSS

BGA125N6Ultra Low Current Low Noise Amplifier for L2/L5 GNSS ApplicationsElectrical Characteristics

Table 5: Electrical Characteristics at TA = 25 C, VCC = 2.8 V, f = 1164– 1300MHz

Parameter1 Symbol Values Unit Note / Test ConditionMin. Typ. Max.

Supply Voltage VCC 1.1 2.8 3.3 V –

Supply Current ICC– 1.45 1.8 mA ON-Mode– 0.2 3 µA OFF-Mode

Power on Voltage VPON1.1 – VCC V ON-Mode0.0 – 0.4 V OFF-Mode

Power on Current IPON– 1.5 3 µA ON-Mode– – 1 µA OFF-Mode

Insertion Power Gainf = 1176 MHz

|S21|2 18.7 20.2 22.2 dB ON-Mode

Noise Figure2

f = 1176 MHz ZS = 50ΩNF – 0.80 1.20 dB ON-Mode

Input return loss3

f = 1176 MHzRLIN 8.5 11 – dB ON-Mode

Output return loss3

f = 1176 MHzRLOUT 10 15 – dB ON-Mode

Reverse isolation3

f = 1176 MHz1/|S21|2 25 40 – dB ON-Mode

Power up settling time4 5 tS – 8 11 µs OFF- to ON-ModeInband input 1dB-compressionpoint3

f = 1176 MHz

IP1dB -16 -12 – dBm ON-Mode

Inband input 3rd-order interceptpoint3 6

IIP3 -19 -14 – dBm ON-Mode

Out of band input 3rd-order in-tercept point5 7

IIP3OOB -3 2 – dBm ON-Mode

Stability5 k >1 – – f=20MHz–10 GHz

1Based on application described in chapter 42PCB losses are substrated3Verification based on AQL; not 100% tested in production4LNA gain changed to 90% of final gain value (in dB)5Guaranteed by device design; not tested in production6Inband@ 1176 MHz, Input power = −30 dBm for each tone, 1 MHz tone distance7f1 = 1785MHz, f2 = 2401MHz, Input power = −20 dBm for each tone

Datasheet 6 Revision 2.12021-02-22

Page 8: Ultra Low Current Low Noise Amplifier for L2/L5 GNSS

BGA125N6Ultra Low Current Low Noise Amplifier for L2/L5 GNSS ApplicationsApplication Information

4 Application Information

Pin Configuration and Function

AI

AO

GNDPON

VCC

6

5

4

1

2

3GND

Figure 2: BGA125N6 Pin Configuration (top view)

Table 6: Pin Definition and FunctionPin No. Name Function1 GND Ground2 VCC DC Supply3 AO LNA Output4 GND Ground5 AI LNA Input6 PON Power On Control

Datasheet 7 Revision 2.12021-02-22

Page 9: Ultra Low Current Low Noise Amplifier for L2/L5 GNSS

BGA125N6Ultra Low Current Low Noise Amplifier for L2/L5 GNSS ApplicationsApplication Information

Application Board Configuration

N1 BGA125N6

AI, 5

PON, 6

GND, 4

GND, 1

AO, 3

VCC, 2

C1 (optional)

L1

RFin

PON

VCC

C2

(optional)

RFout

Figure 3: BGA125N6 Application Schematic

Table 7: Bill of Materials TableName Value Package Manufacturer FunctionC1 (optional) 1nF 0402 Various DC block1

C2 (optional) ≥ 1nF 0402 Various RF bypass2

L1 16nH 0402 Murata LQW15 type Input matchingN1 BGA125N6 PG-TSNP-6-2 Infineon GNSS LNA1DC block might be realized with pre-filter in GNSS applications.2RF bypass recommended to mitigate power supply noise.

Datasheet 8 Revision 2.12021-02-22

Page 10: Ultra Low Current Low Noise Amplifier for L2/L5 GNSS

BGA125N6Ultra Low Current Low Noise Amplifier for L2/L5 GNSS ApplicationsPackage Information

5 Package Information

Figure 4: PG-TSNP-6-2 Package Outline (0.7mm x 1.1mm x 0.375mm)

0.25

0.4

0.25

0.4

0.25

0.4

0.25

0.4

Stencil aperturesCopper Solder mask

(stencil thickness 100 µm)

NSMD

Figure 5: Footprint Recommendation

Datasheet 9 Revision 2.12021-02-22

Page 11: Ultra Low Current Low Noise Amplifier for L2/L5 GNSS

BGA125N6Ultra Low Current Low Noise Amplifier for L2/L5 GNSS ApplicationsPackage Information

Figure 6:Marking Specification (top view)

Table 8: Monthly Date Code MarkingMonth 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 20261 a p A P a p A P a p A P2 b q B Q b q B Q b q B Q3 c r C R c r C R c r C R4 d s D S d s D S d s D S5 e t E T e t E T e t E T6 f u F U f u F U f u F U7 g v G V g v G V g v G V8 h x H X h x H X h x H X9 j y J Y j y J Y j y J Y10 k z K Z k z K Z k z K Z11 l 2 L 4 l 2 L 4 l 2 L 412 n 3 N 5 n 3 N 5 n 3 N 5

Figure 7: PG-TSNP-6-2 Carrier Tape

Datasheet 10 Revision 2.12021-02-22

Page 12: Ultra Low Current Low Noise Amplifier for L2/L5 GNSS

BGA125N6Ultra Low Current Low Noise Amplifier for L2/L5 GNSS Applications

Revision History–Page or Item Subjects (major changes since previous revision)Revision 2.1, 2021-02-22Revision History7 Figure 2 changed to top view

Datasheet 11 Revision 2.12021-02-22

Page 13: Ultra Low Current Low Noise Amplifier for L2/L5 GNSS

TrademarksAll referenced product or service names and trademarks are the property of their respective owners.

Edition 2021-02-22Published byInfineon Technologies AG81726 Munich, Germany

c© 2021 Infineon Technologies AG.All Rights Reserved.

Do you have a question about anyaspect of this document?Email: [email protected]

Document referenceDoc_Number

IMPORTANT NOTICEThe informationgiven in this document shall in noeventbe regarded as a guarantee of conditions or characteris-tics ("Beschaenheitsgarantie"). With respect to any ex-amples, hints or any typical values stated herein and/orany information regarding the application of the prod-uct, Infineon Technologies hereby disclaims any and allwarranties and liabilities of any kind, including withoutlimitationwarranties of non-infringementof intellectualproperty rights of any third party. In addition, any infor-mation given in this document is subject to customer’scompliance with its obligations stated in this documentand any applicable legal requirements, norms and stan-dards concerning customer’s products and any use ofthe product of Infineon Technologies in customer’s ap-plications. The data contained in this document is ex-clusively intended for technically trained sta. It is theresponsibility of customer’s technical departments toevaluate the suitability of the product for the intendedapplication and the completeness of the product infor-mation given in this document with respect to such ap-plication.

For further information on technology, delivery termsand conditions and prices, please contact the nearestInfineon Technologies Oice (www.infineon.com).

WARNINGS

Due to technical requirements products may containdangerous substances. For information on the typesin question please contact your nearest Infineon Tech-nologies oice.

Except as otherwise explicitly approved by InfineonTechnologies in a written document signed by autho-rized representatives of Infineon Technologies, InfineonTechnologies products may not be used in any applica-tionswherea failureof theproductor anyconsequencesof the use thereof can reasonably be expected to resultin personal injury.