triquint product solutions enable next-generation ew...

TriQuint Product Solutions Enable Next-Generation EW, Radar & Communication Systems

2014 IMS MTT-S

G rant Wilcox P roduct L ine Manager

Products for the Defense & Aerospace Market

Electronic Warfare • Amplifiers • Discrete transistors • Switches • Control products

Space • Amplifiers • LNAs • Control products

Defense & Commercial Satellites • Amplifiers • Filters • LNAs • Switches

Navigation • Filters • LNA / filter module

Communications • Amplifiers • LNAs • Discrete transistors • Switches • Filters • Converters / mixers • Control products

Radar Tx / Rx • Amplifiers • LNAs • Discrete transistors • Converters • Switches • Control products • Filters

2 © TriQuint Semiconductor, Inc.

Active Electronically Scanned Radars Radar designers are very focused on size, weight

& power (SWaP)

1,000s of elements per array

Some 10,000s


GaN: SWaP – Size, Weight & Power Size

– Always important especially in airborne & space applications – GaN offers a 3-5X increase in power density over pHEMT

• Smaller footprint can generate the same power • Less combining • Higher power density means more heat in a concentrated area

Power – Higher power-added-efficiency (PAE) means less system prime power – Higher operating voltage means less current & lower I2R loss


4 Ku-band pHEMT PAs = 1 GaN PA

Basic Radar Transmit & Receive Block Diagram


TriQuint offers solutions for L, S, C, X, Ku & Ka-band radars

Discrete vs Hybrid vs MMIC Packaged discretes used heavily for L, S, C-band Die discretes used for cost, size or X & Ku-band Hybrids eliminate the on-board matching, but at a cost MMICs provide the smallest size, integration & best high-frequency performance

6

Discrete Hybrid MMIC Comments

Price $ $$-$$$ $$-$$$ Dependent on frequency & power

Gain stage 1 1 or 2 2 or 3

Die / package Die / package Package Die / package Dependent on frequency & power

Export Mostly EAR99 Mostly 3A Wide range Dependent on frequency & power

Frequency Pkg mostly <6GHz die thru Ku

Thru Ku Through W-band Dependent on power

© TriQuint Semiconductor, Inc.

S-Band Power: GaN MMICs


Psat

(dB

m)

TGA2583, 12W

TGA2585, 18W

TGA2814, 80W

TGA2813, 100W

TGA2818, 30W

2.7 2.9 3.1 3.3 3.5 2.8 3.0 3.2 3.4 3.6

Freq (GHz)

TGA2817, 60W

3.7

TGA2597, 2W

Production

Development

7

TGA2583-SM: 2.7-3.7GHz 10W PA

5x5mm AC-QFN

PW: 100us, 10%, 25C

8

Benefits – High gain – Good power / PAE combination – Good thermal management – CW or pulse operation – Performance tuning with Vd – Packaged for easy handling

Target markets – S-band radar

Product features – Technology: 0.25um GaN – Frequency: 2.7-3.7GHz – Psat: 40.5dBm – PAE: >50% – SS Gain: 33dB – Bias: 25V, 175mA

Availability – ECCN: 3A001.b.2.a – Samples: Now – Eval boards: Now – Datasheet: Now – Production: Now

PW: 100us, 10%. 25C


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TGA2813: 3.1-3.6GHz 100W PA

Benefits – High power – High PAE – Short & long pulse operation

Target markets – S-band radar

Product features – Technology: 0.25um GaN – Frequency: 3.1-3.6GHz – Psat: 50dBm – PAE: 55% – LS Gain: 22dB – Bias: 30V, 150mA

5.41x6.7mm *CP package planned – June 14*

Availability – ECCN: 3A001.b.2.a – Samples: Now – Eval boards: TBD – Datasheet: Now – Production: Now


S-Band GaN Transistor Product Comparison

Product Freq (GHz)

P3dB (dBm

)

DE (%)

SS Gain (dB) Bias Tech Export

T2G6000528-Q3* DC-6 39.5 55 18.5 28V, 50mA GaN25 EAR99

T1G6001032-SM* DC-6 40 63 19 28V, 50mA GaN25 EAR99

T2G6001528-Q3* DC-6 43 65 16 28V, 50mA GaN25 EAR99

T2G6001528-SG** DC-6 43 57 15.5 28V, 100mA GaN25 EAR99

T2G4003532-FS / -FL* DC-3.5 45 63 18 32V, 150mA GaN25 EAR99

T2G4004532-FS /- FL* DC-3.5 47 65 20 32V, 220mA GaN25 EAR99

T2G4005528-FS* DC-3.5 48 60 16.5 28V, 200mA GaN25 EAR99

T1G4012036-FS / -FL* DC-3.5 51.5 62 18 36V, 360mA GaN2HV EAR99

T1G4020036-FS / -FL*** DC-3.5 51.9 55 16 36V, 260mA GaN2HV EAR99 * Pulsed load-pull data, compromise match @3GHz ** Pulsed load-pull data, power match @3GHz *** Half of device, pulsed load pull data, compromise match @2.9GHz

© TriQuint Semiconductor, Inc. 10

T1G4020036-FL / -FS: 2x120W GaN RF Power Transistor

Product features – Wideband: DC-3.5GHz – 2x independent 120W paths – Input pre-matched for S-band – TQGaN25HV process – VDS: 36V – Low thermal resistance base material – Gemini package for application flexibility – EAR99

Applications

– Commercial & military radar – Professional communications – Military communications – Wideband amplifiers – Test instrumentation – Avionics

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Ordering Information: SAP # Description 1110866 T1G4020036-FL, DC-3.5GHz 2x120W GaN transistor 1111631 T1G4020036-FS, DC-3.5GHz 2x120W GaN transistor 1112254 T1G4020036-FL / -FS, 2.9-3.3GHz eval board 1112253 T1G4020036-FL, sample 1112255 T1G4020036-FS, sample


2.9GHz power sweep half device – power tuned

2.9GHz power sweep half device – efficiency tuned

X-Band Radar: Power Amplifiers Ps

at (d

Bm

)

6.0 7.0 8.0 9.0 10 6.5 7.5 8.5 9.5 10.5 11.5 12 11

Freq (GHz)

TGA2238, 50W

TGA2625, 20W TGA2624, 18W

Production

Development

TGA3002-CP, >100W

GaAs Amplifiers

TGA2590, 30W

TGA2598, 2W

TGA2312-FL, 60W

TGA2622, 40W

TGA2623, 35W


T/R Supporting Cast

2 6 10 14 18 4 8 12 16 20

Freq (GHz)

GaN LNA

6-bit Phase Shifter

GaN LNA

GaN LNA

6-bit PS

VVA

DSA

GaAs LNA

5W Limiter

50-100W

LNAs

Phase Shifters

Attenuators

Limiters

100W SPDT Switches 10W SPDT

5W SPDT


Production

Development

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TGS2355: 0.5-6GHz GaN 100W SPDT

1.52x1.48mm

VC = -40 V Temp = 25 C 20uS Pulse Width, 10% duty cycle

5x5mm ceramic QFN in test


Product features – Technology: GaN on SiC – Frequency: 0.5-6GHz – P.1dB (pulsed): 100W – Insertion loss: <1dB – Isolation: -40dB – Sw Speed: <50nS – Control: -35 / 0V

Benefits – High power handling – Small footprint – Low control current (uA)

Target markets – Radar (L, S, C) – Instrumentation – Communications – General purpose

Availability – ECCN: EAR99 – Samples: Now – Eval boards: June 2014 – Datasheet: June 2014 – Production: Now

5x5mm QFN planned for July 2014 eval will be packaged part

14

TGL2205-SM: 1-6GHz High Power Limiter

4x4mm AC-QFN


Product features – Technology: GaAs VPIN – Frequency: 1-6GHz – Pin handling: 50W (85C) – Insertion loss: 0.5dB – Flat leakage: <16dBm – Return loss: <12dB – No bias

Benefits – High input power protection – Low flat leakage – Low insertion loss – No DC bias required

Target markets – Radar

Availability – ECCN: EAR99 – Samples: Now – Eval boards: Now – Datasheet: Now – Production: Now

15

TGA2611: 2-6GHz GaN LNA

2.14x1.5mm 4x4mm QFN in release

0

0.5

1

1.5

2

2.5

3

2.0 3.0 4.0 5.0 6.0 7.0

Noi

se F

igur

e (d

B)

Frequency (GHz)

Noise Figure vs. Freq. vs. Temperature

+25 °C+85 °C

-55 °C

VD = 10 V, VG = -2.3 V

13

15

17

19

21

23

25

1.0 2.0 3.0 4.0 5.0 6.0 7.0

P1d

B (

dBm

)

Frequency (GHz)

P1dB vs. Frequency vs. Temperature

- 55 °C+25 °C+85 °C

VD = 10 V, VG = -2.3 V


Product features – Technology: GaN25 – Frequency: 2-6GHz – P1dB: 22dBm – SS gain: 25dB – NF (mid-band): 1dB – OIP3: 32 – Bias: 10V, 110mA

Benefits – High input robustness – Low NF – High gain


Target markets – S / C-band radar – Communications

16

TGA2612: 6-12GHz GaN LNA

2.14x1.5mm 4x4mm QFN in release


Product features – Technology: GaN25 – Frequency: 6-12GHz – P1dB: 20dBm – SS Gain: 25dB – NF: 1.5 – OIP3: 29 – Bias: 10V, 100mA

Benefits – High input robustness – Low NF – High gain


Target markets – X-band radar – Communications

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13

15

17

19

21

23

25

1.0 2.0 3.0 4.0 5.0 6.0 7.0

P1d

B (

dBm

)

Frequency (GHz)

P1dB vs. Frequency vs. Temperature

- 55 °C+25 °C+85 °C

VD = 10 V, VG = -2.3 V

0

0.5

1

1.5

2

2.5

3

2.0 3.0 4.0 5.0 6.0 7.0

Noi

se F

igur

e (d

B)

Frequency (GHz)

Noise Figure vs. Freq. vs. Temperature

+25 °C+85 °C

-55 °C

VD = 10 V, VG = -2.3 V

TGP2105 (-SM): 6-18GHz, 6-Bit Phase Shifter (+Vc)

3.15x3.15mm

5x5mm

Eval will be packaged part


Product Features – Technology: GaAs pHEMT – Frequency: 6-18GHz – Bits: 6 – Phase error: 4 deg – Amp error: 0.45dB – Insertion loss: <10dB – Input P1dB: >25dBm – IIP3: >41dBm – Bias: 0, +5V

Benefits – 6 bits offer higher resolution – Wideband performance – No negative voltage rail required


Target Markets – Radar (X, Ku-bands) – EW – SatCom

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TGL2223: 0.5-20GHz, 5-Bit Attenuator

Planned package: 3x3 AC-QFN

Area = 0.894mm2

TGL2223


Product features – Technology: GaAs pHEMT – Frequency: 0.5-20GHz – Bits: 5 – Atten: 15.5dB – Step error: 035dB – Insertion loss: 3.6dB – Input P1dB: >25dBm – Bias: 0, -3V

Benefits – Competitive performance with ultra small form factor

Availability – ECCN: EAR99 – Samples: Sept 2014 – Eval boards: Sept 2014 – Datasheet: Sept 2014 – Production: Q4 2014

Target markets – Radar – EW – Communications

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EW Wideband Power: GaN MMICs Ps

at (d

Bm

)

2 6 10 14 18 4 8 12 16 20

Freq (GHz)

TGA2597, 2W

TGA2574, 10-20W

TGA2573, 10W

TGA2598, 2W

TGA2578, 30W TGA2590, 30W

TGA2214, 4-10W

TGA2237,10W

TGA2576, 45W

TGA2216,12W

Production

Development


TGA2237-SM: 0.03-2.5GHz 10W PA (Distributed)

5x5mm ceramic QFN


Product features – Technology: GaN25 – Frequency: 0.3-2.5GHz – Psat: 10W – PAE: >50% – LS Gain: 13dB – SS Gain: 19dB – Bias: 30, 360mA

Benefits – Wideband power / PAE – Good linearity – Small form factor



TGA2216-SM: 0.1-3GHz 12W PA

5x5mm ceramic QFN


Product features – Technology: GaN25 – Frequency: 0.1-3GHz – Psat: 12W – PAE: >40% – LS Gain: 14dB – SS Gain: 22dB – Bias: 48, 360mA

Benefits – Wideband power / PAE – Good linearity – Small form factor – High operating voltage Availability – ECCN: EAR99 – Samples: Now – Eval boards: Now – Datasheet: Now – Production: Now


TGA2578-CP: 2-6GHz 30W PA

CP: Cu bolt-down


Product features – Technology: GaN25 – Frequency: 2-6GHz – Psat: 30W – PAE: >35% – LS Gain: 19dB – SS Gain: 26dB – Bias: 25, 500mA

Benefits – Broadband power / PAE – World-class performance – Reduces system combining – Higher system efficiency

Availability – ECCN: EAR99 – Samples: June 2014 – Eval Boards: June 2014 – Datasheet: June 2014 – Production: June 2014

Target markets – EW – Radar – Communications – Test instrumentation – EMC amplifier

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TriQuint RF High Power Systems Technologies SpatiumTM power amplifiers

– TWTA upgrade / replacement – Electronic warfare – MilCom, data links – Radar – Test & measurement

Key SpatiumTM features – Wide & narrow bandwidth applications, 2-40GHz – High combining efficiency >93% – Compact form-factor – Low voltage operation – Graceful degradation – Short thermal path – High reliability / long life MTBF – No aging characteristics – Infinite storage life – Scalable to other frequencies


Communications: GaN Amplifiers Ps

at (d

Bm

)

14 16 28 30 15 27 29 31

Freq (GHz)

5W

16W

20W

20W

10W

13

10W

2 4 1 3 5 8 10 7 9 11

50

6 12

10-12W


Production

Development

25

In-House Package Offerings


Cu Bolt-Down

High power amplifiers – CuW flange – Cu bolt down (no flange) – Hybrid assemblies – Thermal carrier

All others – Ceramic air-cavity

• Low-medium power, general purpose – Plastic overmold

• General purpose

GaN Hybrid PA Die on Tab CuW Flange

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In Summary TriQuint is your solution provider

– Largest GaN product portfolio in the world – Complete radar RF block diagram support – Premium broadband power & efficiency for EW – Growing high-frequency communications portfolio – Variety of form factors

• Die • Package • Die on Tab • Integrated assembly

– In-house “design-fab-assembly-test” capability


Thank You


triquint product solutions enable next-generation ew...

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