tq mmic pa design
DESCRIPTION
AWR TutorialTRANSCRIPT
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Power Amplifier Design
TriQuint MMIC Design Training
AWR Confidential
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Summary
An Example of a 2.5 GHz Amplifier to Show:
Setting hotkeys and customizing the AWRDE
Creating and editing schematics and layouts
Using TriQuint DRC and LVS
Simulation and tuning Optimization and using statistics
Nonlinear noise analysis and contributors
Routing iNets
Automated Circuit Extraction (ACE) Axiem
System analysis
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Slide Notation
This class is a step by step tutorial on the AWR DesignEnvironment.
Complete instructions are provided in the text and in the screen
shots / pictures on each slide
The graphic below is always shown on slides where there is
interaction with the Project, Elements, or Layout tabs of theAWR project manager. The correct tab for the required action
is always selected indicating to the user where the items they
are looking for are located.
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2.5 GHz PA Amplifier Target Design
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Target Design
3-D view of the target design
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Loading Libraries (PDKs)
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Libraries - Installing
Before using a PDK (Process Design Kit), it must be installed
on your computer (this procedure is how all PDKs in theAWRDE are installed)
Browse to the installer file (TQOR_TQPEDi_1_1_2x_xx.msi) inthe folder that was provided to the class and run the installer
Accept all the default settings
Note: Your PDK
version number
will be different.
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Libraries
Start the AWRDE and read in a process definition by
choosing File > New With Library > TQOR_TQPED
If you already had other versions installed, you can choose
the specific version of the PDK you would like to use
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Project Save
Save your project using File > Save Project As
Choose any project name
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Project Frequencies
Go to Options > Project Options
Click on the Frequenciestab
Enter 2.5 for the Start frequency and check the box next to Single
Point
Click Applybefore clicking OK
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Setting Hotkeys
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Hotkeys
Add a couple of custom hot keys by choosing Tools > Hotkeys
Note: We can customize:
Hotkeys
Toolbars
Menubars
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Hotkeys - 2
For Categories, choose Windowand then select WindowTileHorizontal
Click in the Press the new hotkeys field and then press the H key
Leave Standardas the editor
Press the Assignbutton
Also assign the V key to WindowTileVertical
Also assign the R key to EditRotateRight (under Editcategory)
Note: You can use the Shift,
Ctrl, and Alt keys in
addition to letters to make a
hotkey.
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Creating And Editing Schematics
Unified Database / Editing Layouts)
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New Circuit Schematics
Go to the Projecttab and make a new circuit schematic named
IV_Test by right-clicking on Circuit Schematicsand choosingNew Schematic
Note: It is generally a good idea not to use
spaces, esp. with artwork cells. Use theunderscore _ instead.
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Layout View of Schematic
Open the layout view of the schematic by clicking on the View
Layoutbutton
Tip: There is a Schematic and Layout view associated with every
circuit schematic.
Note: There are several toolbar menus - RC in a blank spot
of the toolbar browser area to see the choices.
Standard ToolbarSchematic Design
Toolbar
Equations Toolbar
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Clean Workspace
Tile the schematic and layout views by using the new H
hotkey (or select Window > Tile Horizontal)
Note: You can change the color of the
layout background using a built-in scriptScripts > Global Scripts > Examples >
Toggle_Layout_Color
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Element Placement
Elements are found on the Elementstab
Element categories appear in the top of the pane, elements appear in the
bottom Elements are placed by dragging from the bottom pane to the schematic
and then letting go of the mousethis pulls up a ghost image that can thenbe placed
Elements tab
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Element View
Like Windows Explorer, the element
view can be changed by right-clicking in the lower pane of theElements tab Show Detailsis acommon setting.
Tip: You can get help on any element byRC > Element Help.
Tip: The classification of the elements
in the element browser is the same as in
the Element catalog.
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Element Placement
Elements can also be placed using the Elementbutton
You can also use the built-in hotkey Ctrl + L
This will bring up the Add Circuit Element dialog
With this dialog, you can find an element by typing in its name orsearching by keyword in the description
Note: Use Ctrl + click on thecolumn header to change the
field on which you search
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Element Rotation
Prior to placement, elements can be rotated with the right
mouse button
Tip: You can also flip the elements about their horizontal axes using:
Horizontal axis - Shift + right mouse button.
Vertical axis - Ctrl + right mouse button.
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Element Categories
Elements for this exercise can be found in the following
categories:
Libraries > *TQOR TQPED > PHEMT >TOM3 >PHEMT_Instances > TQPED_EHSS_T3_Inst
MeasDevice > IV > IVCURVE
Ports, Grounds, and Subcircuitscan be found on the tool bar (Schematic Design Toolbar)
Tip: Hot Keys
PortCtrl+P
GroundCtrl+G
SubcircuitCtrl+K
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Swp Step
IVCURVEID=IV1VSWEEP_start=0 V
VSWEEP_stop=8 VVSWEEP_step=1 VVSTEP_start=0 VVSTEP_stop=1 VVSTEP_step=0.1 V
1
2
3
TQPED_EHSS_T3iID=EHSSi1W=100NG=20TQPED_EHSS_T3_MB=EHSS_T3
Test Bench Assembly
Assemble the schematic shown below
Note: The circled parameters
are NOT using default values.
Watch the schematic layout as
you change the W and NG
parameters.
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Test Bench Assembly
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Creating Graphs and Adding
Measurements
(Using Simulation)
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Adding Graphs
Add a new rectangular graph named IV_Curves by right-
clicking on Graphsand choosing NewGraph
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Adding Measurements
Add a new measurement to the graph by right-clicking on the graph
and choosing Add Measurement Choose Measurement Type Nonlinear > Current andMeasurementIVCurveand note that it points to IV_Test
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Duplicating Measurement - Aplac
Copying measurements is a quick way to add similar measurements
to the same graph or other graphs You can copy a measurement by dragging an existing measurement
onto the top of the graph icon
This method of copying works with Schematics, Data Files, SystemDiagrams, Optimization Goals, Yield Goals, EM Structures, etc.
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Duplicating Measurement - Aplac
Once the Measurement copy is created, it can be edited by
double-clicking on it
Change one of the IVCurvemeasurements so that it uses the
APLAC DCsimulator and click OK
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Simulation
Press the lightening bolt (Analyze) button to see the results.
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Using Tuning
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Tune Setup
Tune on the circuit by going back to the IV_Test schematic window
and using the Tune Toolto select the Wand NGparameters on theeHEMT.
Once a parameter is selected for tuning it will turn blue
Use tune tool to
select parameters
for tuning.
Equations Toolbar
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Tuning
Press the Tunebutton and use the sliders to vary W and NG
and see the effect on the simulation results on the graph.
Note: The Aplac and standard HB
results change simultaneously
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Tuning
Open the layout view of the IV_Test schematic
Also open a 3D layout view by clicking on the
View 3D Layoutbutton
Use your Tile Horizontal or Tile Vertical hotkeysto tile all four windows
Now tune on W and NG to see all four windows
update simultaneously
Hold down the Ctrlkey to see the layout viewsupdate real time
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Tuning
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Markers and Traces
Makers can be added to graphs by right-clicking on the graph andchoosing Add Marker
The built-in hotkey for this is Ctrl+M
Add a marker at 4V VDS and 240 mA IDS
You can search for a specific point on a graph by right-clicking on themarker text and choosing Marker Search
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Markers and Traces
If we select the trace where 4V, 240mA lies and hold
down the mouse button, we can see the gate voltage onthe bottom left of the screen
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Building the Amplifier
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Create a New Schematic
Create a new schematic and name it 1Stage_Amp
This schematic will need the following elements that can all befound under Libraries > *TQOR TQPED
Capacitors > Lumped > TQPED_CAPA (x3)
PHEMT >TOM3> PHEMT_Instances >
TQPED_EHSS_T3_Inst (x2)
Resistors > Lumped > TQPED_RESW (x6)
Spirals > TQPED_MRIND (x1)
Vias and Pads > TQPED_SVIA (x3)
Vias and Pads > TQPED_PAD (x3)
These are standard elements Ports > Port (x2) (Can also use Ctrl+P)
Ports > PORT_NAME (x1)
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1Stage_Amp SchematicFull View
TQPED_RESWID=R2R=100 OhmW=5 umL=10 umTYPE=NiCr
TQPED_RESWID=R6R=2760/4 OhmW=5 umTYPE=NiCr
TQPED_RESWID=R3R=1000 OhmW=50 umTYPE=HVR
TQPED_CAPAID=C1C=2.8 pFA=1W=66 umL=66 um
TQPED_RESWID=R5R=2760/4 OhmW=5 umTYPE=NiCr
TQPED_CAPAID=C2C=2.8 pFA=1
1
2
3
TQPED_EHSS_T3iID=EHSSi1W=100NG=20TQPED_EHSS_T3_MB=EHSS_T3
TQPED_RESWID=R4R=2760/4 OhmW=5 umTYPE=NiCr
TQPED_RESWID=R1R=2760/4 OhmW=5 umTYPE=NiCr
TQPED_CAPAID=C3C=10 pFA=1W=125.5 umL=125.5 um
VG_CHIP
PORTP=1Z=50 OhmPIN_ID=RF_IN
PORTP=2Z=50 OhmPIN_ID=RF_OUT
TQPED_MRIND2
ID=L1W=25 umS=20 umN=6L1=145 umL2=150 umUNDERWIDTH=40 umLVS_IND="5"LT=PlatedMSUB=SNAME="TQPED_MRIND"
1
TQPED_PADID=RF_IN
TQPED_SVIAID=V3W=90 umL=90 um
TQPED_SVIAID=V2W=90 umL=90 um
TQPED_SVIAID=V1W=90 umL=90 um
1
TQPED_PADID=RF_OUT
1
TQPED_PADID=VG
1
2
3
TQPED_EHSS_T3iID=EHSSi2W=10NG=1TQPED_EHSS_T3_MB=EHSS_T3
Note: The orientation of the
capacitors is important. Lookat the \ on the symbol - that
is pin 1.
1Stage Amp Schematic
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1Stage_Amp Schematic
Resistor Bank
TQPED_RESWID=R6
R=2760/4 OhmW=5 umTYPE=NiCr
TQPED_RESWID=R5R=2760/4 OhmW=5 umTYPE=NiCr
TQPED_RESWID=R4
R=2760/4 OhmW=5 umTYPE=NiCr
TQPED_RESWID=R1R=2760/4 OhmW=5 umTYPE=NiCr
VG_CHIP
1
TQPED_PADID=VG
Hint: Use your new hotkey R to
rotate the elements after placing them.
Also, use copy and paste for multiple
elements that are the same.
1Stage Amp Schematic
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1Stage_Amp Schematic
Active Bias
TQPED_RESWID=R2R=100 OhmW=5 umL=10 umTYPE=NiCr
TQPED_RESWID=R3R=1000 OhmW=50 umTYPE=HVR
TQPED_RESWID=R5R=2760/4 OhmW=5 um
TYPE=NiCr
TQPED_RESWID=R1R=2760/4 OhmW=5 um
TYPE=NiCr
TQPED_CAPAID=C3C=10 pF
A=1W=125.5 umL=125.5 um
TQPED_SVIAID=V3W=90 umL=90 um
1
2
3
TQPED_EHSS_T3iID=EHSSi2W=10NG=1TQPED_EHSS_T3_MB=EHSS_T3
1Stage Amp Schematic
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1Stage_Amp Schematic
Active Bias
TQPED_RESW
TQPED_CAPAID=C1C=2.8 pF
A=1W=66 umL=66 um
TQPED_CAPAID=C2C=2.8 pF
A=1
1
2
3
TQPED_EHSS_T3iID=EHSSi1W=100NG=20TQPED_EHSS_T3_MB=EHSS_T3
PORTP=1Z=50 OhmPIN_ID=RF_IN
PORT
P=2Z=50 OhmPIN_ID=RF_OUT
TQPED_MRIND2ID=L1W=25 umS=20 umN=6L1=145 umL2=150 umUNDERWIDTH=40 umLVS_IND="5"LT=PlatedMSUB=
SNAME="TQPED_MRIND"
1
TQPED_PADID=RF_IN
TQPED_SVIAID=V2W=90 umL=90 um
TQPED_SVIAID=V1W=90 umL=90 um
1
TQPED_PADID=RF_OUT
See next slides for details on
setting inductor parameters
S
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Secondary Parameters
You will need to modify some of the secondary parameters of
the inductor Right-click on the inductor symbol and choose Properties
Click on the Show Secondarybutton to expose all the
parameters
You will need to add a PIN_ID parameter to Port 2 called
RF_OUT
S d P t
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Secondary Parameters
Make sure the parameters of your inductor match these:
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Schematic Layout - Placement
A lifi L t
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Amplifier Layout
We want to make the layout snap 0.1 um
Choose Options > Layout Options Change the grid spacing to 0.1 um
A lifi L t
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Amplifier Layout
Open the layout view of the 1Stage_Amp schematic. It might
look something like this (a mess)
I ti GDSII Lib i
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Importing GDSII Libraries
Import a GDSII library into AWRDE by switching to the Layout
tab and right-clicking on Cell Libraries > Import GDSII Library Import Class_Lib.gdsfrom your Trainingfolder
A lifi L t
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Amplifier Layout
With your schematic layout view open, click on the Layouttab
and click on the Cell Librarycalled Class_Lib Toward the lower left corner, you will see a Layout Cellcalled
Class_Lib
Drag this cell into the layout window
Then drag from here
Click here
Amplifier La o t
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Amplifier Layout
The schematic layout should now look like this
Amplifier Layout
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Amplifier Layout
Place all your components so they match the footprints given in the
artwork cell (use Ctrlkey while dragging to enable snap models)
This will be demonstrated
You will notice that you end up missing three RF OUT bondpads
Vector Instance
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Vector Instance
Open the schematic view of the amplifier
Right click on the TQPED_PAD called RF_OUT and choose
Properties
Click on the Vectortab and enter [0:3]
Vector Instance
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Vector Instance
After creating a vector instance the schematic wire will default to be abus instead of a wire. This is not what we want as all the bond pads
should be shorted to each other, not connected to individual bus lines. Busses are denoted by thick wires
Double-click on the wire name to edit and change it from B1[0:3] to B1
B1
1
2
3
TQPED_EHSS_T3iID=EHSSi1W=100NG=20TQPED_EHSS_T3_MB=EHSS_T3
1
TQPED_PADID=RF_OUT[0:3]
PORTP=2Z=50 OhmPIN_ID=RF_OUT
B1[0:3]
1
2
3
TQPED_EHSS_T3iID=EHSSi1W=100NG=20TQPED_EHSS_T3_MB=EHSS_T3
1
TQPED_PADID=RF_OUT[0:3]
PORTP=2Z=50 OhmPIN_ID=RF_OUT
Vector Instance
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Vector Instance
Open the layout view of the schematic, and you will now see 4 instances
of the RF_OUT bond pad
Place these appropriately
When finished, select the footprint artwork cell and delete it (Ctrl + Shift
in conjunction with Left Mouse Clickprovides cycle select capability,
which might be needed to select the artwork cell).
The layout should now look something like this:
Associating Artwork with Schematic
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g
Elements
Open the schematic view of the amplifier
Open the properties dialog of Port 2
Click on the Layouttab and select RECT_PIN
Associating Artwork with Schematic
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g
Elements
Open the layout view of the amplifier
Find the layout for Port 2, right-click on it and select Shape
Properties Change the Line Type to Metal2
Associating Artwork with Schematic
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g
Elements
Move and stretch the RECT_PIN so it encompasses all the RF_OUT pads
To stretch the RECT_PIN, double-click on it to bring up the drag handles
Use the Ctrlkey to snap the corners of the RECT_PIN to the corners ofthe pads
Associating Artwork with Schematic
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g
Elements
Repeat the same steps for both the PORT 1 and VG_CHIP elements, thistime using the RECT_PIN layout to overlap their corresponding individual
TQPED_PAD layouts This time leave the Line Type at Metal0in the Shape Properties dialog
Hold down Ctrlto snap to corners
Adding Text to Layout
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Adding Text to Layout
Open the schematic view of the amplifier
Click on the Elementstab
Browse for TQPED_TEXTunder Libraries > *TQOR TQPED > Shortcuts
> Text
Drag the TQPED_TEXT element into the schematic, and edit the
parameters to match what is below:
TQOR TEXT
TQPED_TEXTID=T3TEXT="Example\nPED Amp"XSPACE=10 umYSPACE=10 umSIZE=Large
Adding Text to Layout
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Adding Text to Layout
Open the layout view of the
amplifier Put the text wherever you like
Changing Layout Parameters
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Changing Layout Parameters
It is possible to change some parameters of certain PDK elements
that only affect their layout Right-click on the large cap on the bottom left of the amplifier and
select Shape Properties
Click on the Parameterstab and change M1Topfrom 0 to 1 .
Notice how the layout changed.
Do the same for the other two caps
Changing Layout Parameters
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Changing Layout Parameters
We also want to change some of the shape properties of the larger
eHEMT device. Change DFING_LT, SFING_LT, and DPAD_LTfrom 0 to 2
Change GPAD_LTfrom 0 to 1
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Schematic Layout - Routing
iNet Routing
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iNet Routing
iNets are intelligent paths that can be used to
draw electrical connectivity in layout
The linetype and default width of the iNet is
controlled in the Routing Properties dialog
Bring up this dialog by clicking on the ShowRouting Propertiesbutton
iNet Routing
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iNet Routing
Change the default width to 70 um and make sure the Line type is
set to Metal0
To activate the iNet routing mode, double-click on any red ratline
iNet Routing
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iNet Routing
To start routing, left-click at the center of the RF_IN pad (the cursor
will snap to the center of the pad)
Move the mouse to the left and double-click on the center of the
nearest capacitor
iNet Routing
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iNet Routing
Notice when the route is complete, the ratline disappears
Repeat this procedure by connecting the two smaller capacitors witha 70um net on Metal1
To change the line type mid-route, hit Ctrl+Shiftand roll the mouse
wheel
Then connect the center capacitor to the larger capacitor with a 70um
net on Metal0.
iNet Routing
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iNet Routing
Continue routing until you have a layout that looks something like this:
Shape iNets
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Shape iNets
For the traces that connect the large eHEMT to the rest of the MMIC,
instead of using standard iNets, we will use shape iNets Draw a rectangle on Metal1 that connects the gate of the device to
the inductor and the HVR resistor
To draw the rectangle, first click on the Layouttab and select the
Metal1draw layer.
Next, click on the Draw Rectanglebutton and draw the rectangle.
Shape iNets
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Shape iNets
The rectangle should look like this:
Shape iNets
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Shape iNets
While holding down Shift, select the rectangle and one of the ratlines.
Then right-click and select Associate Net Routes Notice that the ratlines disappear
Shape iNets
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Shape iNets
Repeat the same procedure for the drain connection, but this time
draw a 6-sided polygon using the Draw Polygonbutton This time use Metal2
Hint: Use the Ctrl key to snap to vertices.
Shape iNets
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p
This is what the completed layout should look like. There should be
no ratlines.
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Schematic Layout - Verification
Verification
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Run a quick DRC / LVS on this complete design
Choose Scripts > Global Scripts > Run_TQOR_ICED_v8
Verification - DRC
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Start by browsing to the paths of ICED and the TriQuint verification
project (should be the same as shown below). Choose ICEDDRC only (note that mailDRC is supported).
Press OK
Verification - DRC
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After the DRC is complete the errors will appear in the AWRDE DRC
Error Viewer. Tile out the DRC error window and the Layout Window.
If desired, double-click on errors to zoom in on them.
When finished choose DRC > Clear DRC errors.
Verification - LVS
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Re-run the script, this time choosing ICEDLVS only.
Note that all paths and options are remembered on subsequent runsso browsing is not necessary.
Click OK
Verification - LVS
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After the LVS is complete the errors will appear in the AWRDE LVS
Error Viewer, which cross probes between the schematic and layout. Tile out the LVS error window, the Layout Window and the Schematic
Window.
When finished chose DRC > Clear LVS errors.
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Load Pull Analysis
Load Pull
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Create a new schematic called Load_Pull
We want to place an instance of 1Stage_Amp into the Load_Pullschematic.
To insert a subcircuit into a schematic, either press the Subcircuit
button or use Ctrl+K
1 RF_OUT
SUBCKTID=S1NET="1Stage_Amp"VG_CHIP=VG_CHIP
Changing Symbols
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We want to change the symbol for the 1Stage_Amp subcircuit tosomething more meaningful
Right-click on the 1Stage_Amp subcircuit, and choose Properties Click on the Symboltab
Change the number of nodes to 2 and click on [email protected] list of symbols
Load Pull
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SUBCKTID=S1NET="1Stage_Amp"VG_CHIP=VG_CHIP
3:Bias
1 2
LTUNER2ID=TU1Mag=0.5Ang=0 DegZo=50 Ohm
DCVSID=V2V=VG V
DCVSID=V1
V=VD V
PORT1P=1Z=50 OhmPwr=12 dBm
VG_CHIP
PORTP=2Z=50 Ohm
Create the schematic shown below
Use Ctrl+Lto find the elements by the element name
Hint: This element is an NCONN,
and NCONN names are case-sensitive
Global Definitions
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VG and VD need to be defined, and since they will most likely beused in more that one place, it will be easiest to define them globally
Double-click on Global Definitionsin the Project browser.
Click on the Equationbutton to enter values for VG and VD
When entering equations, if you click Shift+Enteryou can enter thenext equation on a new line
Note: Variables are case-sensitive
Adding DC Annotations
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To make sure the active device is being biased properly, we need to
add DC annotations With the Load_Pull schematic open, click on the Annotationbutton
This will bring up the Add Annotation dialog which is very similar to
the Add Measurement dialog Select DCIAand click Apply
Select DCVA_Nand click OK
Dont forget to change the
simulator toAplac DC
DC Annotations
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Click on the Simulatebutton to make the DC annotations appear on
the schematic
Select the 1Stage_Amp subcircuit and click on the Edit Subcircuit
button to descend into the subcircuit
Note that the annotations are also included in the subcircuit
B1[0:3]
TQPED_RESWID=R4R=2760/4OhmW=5umTYPE=NiCr
1.24V
0.753mA
TQPED_RESWID=R3R=2760/4OhmW=5umTYPE=NiCr
1.76V
0.753mA
TQPED_RESWID=R2R=2760/4OhmW=5umTYPE=NiCr
2.28V
0.753mA
TQPED_RESWID=R1R=1000OhmW=50umTYPE=HVR
0.00403mA
1
2
3
TQPED_EHSS_T3iID=EHSSi2W=10NG=1TQPED_EHSS_T3_MB=EHSS_T3
0.075V
0.749mA
6.87e-6mA
0.749mA
1
2
3
TQPED_EHSS_T3iID=EHSSi1W=100NG=20TQPED_EHSS_T3_MB=EHSS_T3
0.717V
0.00403mA
3.7V
253mA
0.00278V
253mA
TQPED_CAPAID=C3C=10pFA=1
0.721V
0mA
TQPED_CAPAID=C2C=2.8pFA=1
1.65e-5V
0mA
TQPED_CAPAID=C1C=2.8pFA=1
0V
0mA
0.717V
VG_CHIP
PORTP=2Z=50OhmPIN_ID=RF_OUT
PORTP=1Z=50Ohm
TQOR TEXT
TQPED_TEXTID=T1TEXT="Example\nPEDAmp"XSPACE=10umYSPACE=10umSIZE=Large
1
TQPED_PADID=RF_OUT[0:3]
#1: 0V
#2: 0V
#3: 0V
#0: 0mA
#1: 0mA
#2: 0mA
#3: 0mA
1
TQPED_PADID=RF_IN
0mA
1
TQPED_PADID=VG
2.8V
0mA
TQPED_SVIAID=V3W=90umL=90um
127mA
TQPED_SVIAID=V2W=90umL=90um
127mA
TQPED_SVIAID=V1W=90umL=90um
0.749mA
TQPED_MRIND2ID=L1W=25umS=20umN=6LVS_IND="5"
0mA
TQPED_RESWID=R6R=100OhmW=5umTYPE=NiCr
0.749mA
TQPED_RESWID=R5R=2760/4OhmW=5umTYPE=NiCr
0.753mA
Load Pull Wizard
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In order to conduct load pull, there must be a measurement for the
parameter we are trying to optimize
Add a rectangular graph called LoadPull Pout and add the following
measurement to it. We are going to use APLAC.
Make sure this is PORT_2
Dont forget to check dBm
Change simulator to Aplac HB
Load Pull Wizard
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To start the Load Pull Wizard, expand the Wizardsnode in theProject browser and double-click on AWR Load Pull Wizard
You will get this dialog
Load Pull Wizard
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Click on the Addbutton to choose a measurement
We only have one measurement, so the choice is easy
Name the data file Pout_Data
Change the Center Mag to 0.5, the Center Ang to 180, and theRadius to 0.4
Click on Coarseand click Set Center and Radius (very important)
The Smith Chart will update to show the points that will be swept
Load Pull Wizard
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Click Simulateto start the load pull sweep
Load Pull Wizard
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When the simulation is
complete, you will see aSmith Chart with load pullcontours
To get rid of extracontours, right-click on the
graph, choose ModifyMeasurement, select theLPCSmeasurement, andincrease the Contour Minvalue to 23 or 24
You may also want tochange the Countour Stepto 0.25
Load Pull Wizard
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Add a measurement to the Smith Chart called
LPCSMAX and click Simulateto update the plot Add a marker to the LPCSMAX point
Re-Normalizing Graph
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To get a more meaningful impedance value from the Smith Chart, thegraph needs to be re-normalized to 50 Ohms
Open the graph properties dialog and click on the Markerstab
Change Z or Y display to be Denormalized to 50.0 Ohms
Re-Normalizing Graph
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Now click on the Tracestab and change the weight of
the second trace to make the marker more bold
Load Pull Wizard
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The marker will look like this after de-
normalization
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Creating And Editing Schematics
(Part 2)
Simple Output Match
Populating a New Schematic
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Create a new schematic called Output_Match.
CAPID=C2C=2 pF
CAPID=C1C=100 pF
VD_MODULE
PORTP=1Z=50 Ohm
INDID=L2L=1.7 nH
PORTP=2Z=50 Ohm
INDID=L1L=4 nH
Tuning the Output Match
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Add an S11 measurement of the Output_Matchcircuit tothe Load Pull Data Contour Graph
Tuning the Output Match
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Simulate, and the graph should look like this
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Nonlinear Simulation
Adding Subcircuits
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Create another new schematic called Packaged_Amp
Associate the new schematic with the AWR_Module LPF Insert 1Stage_Amp and Output_Match subcircuits into
the schematic
1 2
SUBCKTID=S2NET="Output_Match"VD_MODULE=VD_MODULE
1 RF_OUT
SUBCKTID=S1NET="1Stage_Amp"VG_CHIP=VG_CHIP
Approximating Bondwires
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Change the symbol for the 1Stage_Amp subcircuit like we did before
Now we want to add equivalent bondwire models to the schematic using the
SRL elements (Elements > Inductors > SRL)
Change the R and L values of the SRL element to match what is below
This element is called NCONNand is located under Interconnects
SRLID=LbondVCC1R=0.1 OhmL=0.7 nH
SRLID=LbondIn1R=0.1 OhmL=0.7 nH
SRLID=LbondOut1R=0.07 OhmL=0.3 nH
VG_CHIP
GND_MODULE
VD_MODULE
VG_MODULE
PORTP=2Z=50 Ohm
PORTP=1Z=50 Ohm
SUBCKTID=S1NET="1Stage_Amp"VG_CHIP=VG_CHIP
1 2
SUBCKTID=S2NET="Output_Match"VD_MODULE=VD_MODULE
Nonlinear Test Bench
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Pin=12
DCVSID=V1V=VD V
Xo Xn. . .
SWPVARID=SWP1VarName="Pin"Values=stepped(0,12,1)UnitType=None
DCVSID=V2V=VG V
SUBCKTID=S1NET="Packaged_Amp"GND_MODULE=GND_MODULEVD_MODULE=VD_MODULEVG_MODULE=VG_MODULE
PORT1P=1Z=50 OhmPwr=Pin dBm
PORTP=2Z=50 Ohm
GND_MODULEVG_MODULEVD_MODULE
Create a new Schematic named Power_Sweep
Insert the Packaged_Amp subcircuit and change the symbol to look like a
two-port amp
Populate the schematic so it looks like this:
Pin must be explicitly defined.
Dont forget quotation marks.
Nonlinear Test Bench
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Add DC voltage and current annotations to the Power_Sweep schematic
Click on the Packaged_Amp subcircuit, and click the Edit Subcircuitbutton
Click on the 1Stage_Amp subcircuit, and click the Edit Subcircuitbutton
again
Zoom in on the active device to make sure it is biased properly
Nonlinear Measurement
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We now want to create a plot of Pout vs Pin
Create a new rectangular graph called Power Sweep Add the following measurement to the graph
Nonlinear Measurement
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Click Simulateand your graph should look like this:
Duplicate the Pcomp measurement using the drag and drop technique
Nonlinear Measurement
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Modify the new measurement to measure power gain
These are NOT
the default values
Nonlinear Measurement
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Simulate, and your graph will look like this
Plotting One Measurement Vs Another
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To plot Gain vs. Output Power first make a new rectangular graph and then
add the measurement shown below.
The PlotVs Measurement makes it easy to plot any single measurement vs.
another.
In this case the plot uses the existing Output Power and Gain measurements.
Plotting One Measurement Vs Another
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The PlotVs plot is shown below.
Using MPROBE
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AWR has a unique measurement probe called MPROBE that allows the user
to make virtually any kind of measurement on their circuit and have the
results update real-time
Open the 1Stage_Amp circuit and place an MPROBE at the gate of the
output eHEMT
To place an MPROBE, click on the Measurement Probebutton
B1
1
2
3
TQPED_EHSS_T3iID=EHSSi1W=100NG=20TQPED_EHSS_T3_MB=EHSS_T3
M_PROBEID=VP1
1
TQPED_PAD
ID=RF_OUT[0:3]
TQPED_SVIA
ID=V3W=90 umL=90 um
TQPED_SVIA
ID=V2W=90 umL=90 um
PORTP=2Z=50 OhmPIN_ID=RF_OUT
Using MPROBE
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Add a new rectangular graph called Waveforms
Open the Add Measurement dialog and choose the Vtimemeasurement
under Nonlinear > Voltage ChoosePower_Sweep as the Data Source Name
Choose M_PROBE.VP1as the Measurement Component
Choose Plot all tracesfor Sweep Freq and choose Pin=13forSWPVAR.SWP1
Note: Do NOT click
OK before continuing
to the next slide
Using MPROBE
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Click Apply, then add the equivalent measurement using Itime
under Nonlinear > Current
Using MPROBE
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Your graph should look like this
Using MPROBE
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Open the Graph Properties and click on the Measurementstab
Click the AutoStackbutton
Using MPROBE
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Your graph will now look like this
Using MPROBE
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Now with only the 1Stage_Amp schematic and the Waveforms graph tiled
horizontally, start moving the MPROBE around in the schematic.
Note: the MPROBE must be placed within 1 grid space of an element nodefor it to work
Using MPROBE
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MPROBE also has a dynamic mode
Right-click on the MRPOBE and select Dynamic Probe
Now you can click anywhere in the circuit and even ascend/descend
hierarchy
Disable the time-domain measurements when done
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Nonlinear Noise Analysis
Nonlinear Noise AnalysisDuplicateSchematic
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Before running Noise Analysis, lets create a noise analysis test bench
Using the same drag and drop technique used to duplicate a measurement,
duplicate the Power_Sweep schematic and rename it to Noise_Sweep
Nonlinear Noise AnalysisNLNOISE Block
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Open the Noise_Sweep schematic and delete the SWPVAR block
Using the Add Element button (or Ctrl + L), add an NLNOISEblock
to the schematic
Pin=12.5
DCVSID=V2V=VG V
DCVSID=V1V=VD V
GND_ModuleVD_MODULE VG_MODULE
PORT1P=1Z=50 OhmPwr=Pin dBm
PORTP=2Z=50 Ohm
SUBCKT
ID=S1NET="Packaged_Amp"GND_MODULE=GND_MODULEVD_MODULE=VD_MODULEVG_MODULE=VG_MODULE
NLNOISEID=NS1PortTo=2PortFrom=1NFstart=0.1 GHzNFend=0.2 GHzNFsteps=5SwpType=LINEARLSTone={1}SSTone=2
Nonlinear Noise AnalysisNLNOISE Block
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Modify the NLNOISEblock so the parameters match what
is shown below NLNOISEID=NS1PortTo=2PortFrom=1NFstart=0.01 GHz
NFend=0.01 GHzNFsteps=1SwpType=LINEARLSTone=1SSTone=2
Nonlinear Noise AnalysisNOIS Parameter
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Open the 1Stage_Amp schematic and double-click on one of the
eHEMT devices
Click on the Parameterstab and click Show Secondary
Change the NOISparameter to 1
Repeat the same steps for the other eHEMT device
Nonlinear Noise Analysis - Measurement
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Create a new rectangular graph and name it NL Noise
Right-click on the graph and choose Add New Measurement
Nonlinear Noise Analysis - Measurement
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Choose NPo_NL_BWunder Nonlinear > Noise
Select Noise_Sweepas the source
Change the Measurement Bandwidth to30e3, change the
Simulatorto APLAC HB, and make sure to check the dBmbox
Nonlinear Noise Analysis - Measurement
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Click Simulateto see the results on the graph
Nonlinear Noise AnalysisNoiseContributors
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Click Scripts > Global Scripts > NL_Noise_APLAC
(Main)
Choose Noise Power and Boththen click OK
Nonlinear Noise AnalysisNoiseContributors
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This will run the Nonlinear Noise Contributors script
through the APLAC native noise simulator
When the simulation is complete, click on the Infotab in
the Status window and search for
Click on the links to bring up lists of the nonlinear noise
contributors
Nonlinear Noise AnalysisNoiseContributors
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Disable the Nonlinear Noise Measurement when done
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Yield Analysis
Yield Analysis
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Before running Yield Analysis, we need to import a script with a
special histogram function
Click on the Scripting Editor button to open the scripting editor
Right-click where you see your project name in the scripting editors
Project browser, and choose Import
Browse to Equations.bas in C:\Training_Extra\Scripts
Close the scripting editor and save the project
Yield Analysis
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Before running Yield Analysis, lets trim down the number of
simulation points.
Go to the Power_Sweep Schematic and change the step size on the
Pin sweep to 5.
Xo Xn. . .
SWPVARID=SWP1VarName="Pin"Values=stepped(0,12,5)UnitType=None
Adding Equations For Histograms
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Pout = Power_Sweep:DB(|Pcomp(PORT_2,1)|)[X,3]Pout:Pout=Pout+30
Add the following equations to Output Equations by double-clicking onOutput Equationsin the Project Browser
Note that 30 is added to Pout to convert from dBW to dBm
Output Equation
Regular Equations
Note: See next slide for details on adding
the Pout Output Equation
Adding Equations For Histograms
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When adding the Pout Measurement Equation note that the inputpower sweep is set to Pin = 10 dBm, not Plot all Values
Adding Equations For Histograms
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Add the following text and equation to Output Equations.
The YieldHist() function is used to plot yield histograms.
YieldHist(value, binStart, binStop, binStep, dataFileName)x=YieldHist( Pout, 20, 30, 0.25, "Pout_10dBm_In")
Adding Graph For Histograms
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Add a Graph called Generate Histogram
Add a measurement that plots the value of x from the Output Equation added
on the previous slide. Note that x by itself has no meaning, but this measurement causes thehistogram to update during each Monte Carlo Iteration.
TriQuint Process Yield Analysis
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For TriQuint libraries all yield analysis is controlled by the PROCESS block
on the Global Definitions Page
Double-click on it to see the different variables and their yield analysis setup.
MODEL
TQPED_PROCID=TQPEDKIS=1KVPD=0KVPE=0
KEGCS=1KMIM=1KRNI=1KRSH=1.008KRHV=1KHSILK=0KHMILK=0
KHSPLK=1KHMPLK=1
Standard Component Yield Analysis
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For all other components, yield setup is done in the Element Options dialog,
Statisticstab for the individual components or substrates.
For example, set up the series L in the Output_Match schematic as a 10%part with Gaussian distribution edit as follows.
INDID=L2L=1.905 nH
Running Yield Analysis
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Yield Goals are set up the same as Optimization Goals used previously, but
are under theYield Analysisnode.
They are not required to run yield and look at the performance variation.
Choose Simulate > Yield Analysisto bring up the Yield Simulation control.
Change the Maximum Iterations to 50 and press the Startbutton.
Viewing Monte Carlo Traces
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As the Yield Analysis runs (may take a bit on slow training machines and with
a power sweep) the performance variation is displayed on the graphs.
Viewing Monte Carlo Traces
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The Graph Properties (right-click on the graph and choose Properties)
control this display on theYield Datatab.
Make the changes shown below.
Viewing Monte Carlo Traces
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Now the Graph will only show the minimum and maximum performance.
Plotting Histograms
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Make a new Graph called Pout Histogram
Add a PlotColMeasurement to this Graph as shown below.
This measurement is plotting the histogram data from the YieldHist() equationthat is now stored in the Pout_10dBm_In data file. Column 1 is the input power
and column 2 is the output power.
Plotting Histograms
Ri h li k h h h P i li k h T b d
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Right-click on the graph, choose Properties, click on the Tracestab, and
change the Type to Histogram
The data is very coarse because only 50 simulations were run.
Plotting Histograms
Di bl ll t th P t Hi t d G t Hi t
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Disable all measurements on the Pout Histogram and Generate Histogram
graphs by right-clicking on the graphs in the Project browser and choosing
Disable All Measurements
Resetting Trace Properties
R t t G h P ti th t dj t d d h k Sh
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Return to any Graph Properties that were adjusted and recheck Show
traces and All traces on theYield Datatab.
Click on Clearin the Yield Analysis window
Yield Analysis
R t th P S S h ti SWPVAR bl k t 1 dB
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Reset the Power_Sweep Schematic SWPVAR block to use 1 dB
steps.
Xo Xn. . .
SWPVARID=SWP1VarName="Pin"
Values=stepped(0,12,1)UnitType=None
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Automated Circuit Extraction (ACE)
The EXTRACT Block
O th h ti d l t i f th 1St A h ti
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Open the schematic and layout views of the 1Stage_Amp schematic
and tile them
Insert an EXTRACT block using the element finder
Change the settings to match what is below
Name of the extracted EM structureName of the group of extracted elements
Simulator of choice
X and Y grid size
Which STACKUP to use (in Global Defs)
Should the extraction happen if this is in hierarchy?
EXTRACTID=EX1
EM_Doc="EM_Extract_Nets"Name="EM_Extract"Simulator=ACEX_Cell_Size=1 umY_Cell_Size=1 umSTACKUP="TQPED_STACK"Override_Options=YesHierarchy=On
The STACKUP
Open the Global Definitions
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Open the Global Definitions
Double-click on the TQPED STACKUP element
The Material Defs.tab is where all the different materials used in thestackup are defined
The STACKUP
The Dielectric Layers tab defines the thickness of each layer and
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The Dielectric Layerstab defines the thickness of each layer andallows you to scale the way they are drawn so the 3D view of the EM
structure is easier to see
The STACKUP
The Materials tab defines the thickness of material (conductors vias
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The Materialstab defines the thickness of material (conductors, vias,etc)
The STACKUP
The EM Layer Mapping tab defines which EM layer each drawing
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The EM Layer Mappingtab defines which EM layer each drawinglayer maps to, as well as which material it uses
The STACKUP
Click on the Line Type tab to see how each line type is mapped into
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Click on the Line Typetab to see how each line type is mapped into
the EM structure
ACE ExtractionSelecting iNets
Close the Global Definitions window and return to the layout view of
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Close the Global Definitions window and return to the layout view of1Stage_Amp
Select the blue iNet connecting the capacitors to the spiral inductor Right-click and choose Element Properties
ACE ExtractionSelecting iNets
Click on the Model Options tab and check the box next to Enable
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Click on the Model Options tab and check the box next to Enable
That means this net is now included in the extract group called EM_Extract
Repeat the same procedure for all the other iNets we routed (not the
shapes). NOTE: You can use Shift to multi-select nets
ACE ExtractionSelecting iNets
Click once one the EXTRACT block to highlight the selected nets in
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Click once one the EXTRACT block to highlight the selected nets in
both the schematic and layout views
ACE Extraction
Click Simulate and a window will pop up showing a 2D view of the
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Click Simulate and a window will pop up showing a 2D view of the
extracted traces
Click on the View EM 3D Layout button to get a better view of the
extracted nets
ACE Extraction
3D view of extracted nets
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3D view of extracted nets
ACE Extraction3D Annotation
Click on the EM Annotation button to bring up the Add Annotation
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Click on the EM Annotationbutton to bring up the Add Annotation
dialog
Choose ERC > EXT_CKT3Das the measurement
You can leave the symbol at its
default value of 10e-6, or make
it larger so the extracted
elements are easier to view
ACE Extraction3D Annotation
Click Simulate and your 3D view will now show the extracted
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Click Simulateand your 3D view will now show the extracted
components
ACE ExtractionCoupling
We may want to include coupling effects in our simulation results
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We may want to include coupling effects in our simulation results
To turn on coupling, open the schematic view of 1Stage_Amp
Double-click on the EXTRACT block and click on the ACEtab
Change Max Coupled Distto 20 um
Click Simulate, and note the change in the 3D EM view
ACE ExtractionCoupling
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ACE Extraction
You can enable and disable the EXTRACT block to compare the
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You can enable and disable the EXTRACT block to compare the
simulation results with and without the traces extracted
To see a netlist representation of what is being extracted, open theStatus window and click on the link that looks like this:
This will show you a netlist of every element that was used in the
extracted document
EM ExtractionVerify Results
The graphs now show the merged results that include the ACE simulations.
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g p g
Press Ctrl + F on the graph to freeze the traces, disable the EXTRACT block
on the schematic, and re-simulate to compare the results with and without theextraction.
RE-ENABLE THE EXTRACT BLOCK ON THE SCHEMATIC WHEN DONE.
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Electromagnetic Extraction Using Axiem
The EXTRACT Block
Use AXIEM to make a better model for the inductor
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Insert a new EXTRACT block in 1Stage_Amp using the Element Finder
Change the settings to match what is below
Name of the extracted EM structureName of the group of extracted elements
Simulator of choice
X and Y grid size
Which STACKUP to use (in Global Defs)
Should the extraction happen if this is in hierarchy
EXTRACTID=EX2
EM_Doc="EM_Extract_Ind"Name="EM_Extract_Ind"Simulator=AXIEMX_Cell_Size=10 umY_Cell_Size=10 umSTACKUP="TQPED_STACK"Override_Options=YesHierarchy=On
EXTRACT Frequencies
Double-click on the EXTRACT block and change the settings on each tab.
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For fast simulation on the training machines some simplified settings are
used. Set the Frequencies to go from DC to 12.5 GHz (5 harmonics) as shown,
and dont forget the Applybutton!
EXTRACT Mesh Settings
Set the Mesh settings as shown
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EXTRACT Axiem Settings
Set the Axiem settings as shown
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Similar to adding the nets to the ACE Extract group the inductor needs to be
Axiem ExtractionSelecting iNets
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added to an Extract group.
Double-click on the inductor in the schematic, go to the Model Optionstab,enable it for extraction and set the Group name to EM_Extract_Ind
TQPED_MRIND2ID=L2W=25 um
S=20 umN=6L1=145 umL2=150 umUNDERWIDTH=40 umLVS_IND="5"LT=PlatedMSUB=SNAME="TQPED_MRIND"
Double-click
Axiem ExtractionSelecting iNets
Click once one the EXTRACT block to make sure that it is associated
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with the inductor.
EM Extraction - Axiem
Now when you simulate, it will kick off an EM simulation of the inductor usingAxiem
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Axiem
This will obviously take longer than our ACE extraction because it is a full EM
simulation When it is done simulating, open the 3D view of the extracted document
Add a mesh annotation by clicking on the EM Annotationbutton andselecting Planar EM > EM_MESH_F. Change the Opacity to 0.5.
EM ExtractionCut Planes
With the 3D view of the EM structure open, click on the
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Use cut planebutton
Drag the cut plane to move it, and drag the arrows torotate the plane
Some of the hotkeys for manipulating the cut plane are
Change cut axis: X,Y, or Z Flip cut axis: Shift+ X,Y, or Z
EM ExtractionVerify Results
The graphs now show the merged results that include the ACE and Axiem
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simulations.
Press Ctrl + Fon the graph to freeze the traces, disable the EXTRACTblocks on the schematic, and re-simulate to compare the results with and
without the extraction.
RE-ENABLE THE EXTRACT BLOCK ON THE SCHEMATIC WHEN DONE.
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System Simulation
ACPR and EVM
Copying Schematics
Copy the Power_Sweep schematic by dragging and dropping it
th Ci it S h ti d i th P j t t b
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on the Circuit Schematics node in the Project tab.
Note the new schematic is named Power_Sweep_1
Renaming Schematics
Rename Power_Sweep_1 to System_Test_Bench
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Making a System Test Bench
On the System_Test_Bench delete the SWPVAR block
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Replace the PORT1 element with a PORT_PS1
Set the port power sweep to go from -30 dBm to 10 dBm in stepsof 1 dB
PORTP=2
Z=50 Ohm
DCVSID=V2V=VG V
DCVSID=V1V=VD V
SUBCKTID=S1NET="Packaged_Amp"GND_MODULE=GND_MODULEVD_MODULE=VD_MODULEVG_MODULE=VG_MODULE
VG_MODULEVD_MODULE
PORT_PS1P=1Z=50 OhmPStart=-30 dBmPStop=10 dBmPStep=1 dB
GND_MODULE
New System Diagrams
Now go back to the Project tab and make a new System
Diagram named EDGE Test Bench by right clicking on
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Diagram named EDGE_Test_Bench by right-clicking on
System Diagramsand choosing New System Diagram
Instantiate Module in System
On the Elementstab find System_Test_Benchunder
Subcircuits > NL S and place it on the EDGE Test Bench
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Subcircuits > NL_Sand place it on the EDGE_Test_Bench .
This instantiates the module circuit into the System Diagram.
Build Up System
Build the remainder of the circuit as shown below.VSA
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TPID=INBUFSZ=
NL_SID=S1NET="System_Test_Bench"NOISE=Auto
MPSK_SRCID=A1MOD=8-PSKOUTLVL=PWROLVLTYP=Avg. Power (dBm)RATE=2.708e5CTRFRQ=2.5 GHzCDNG=GrayPLSTYP=GMSK
ALPHA=0.3PLSLN=
SRC MEAS
VSAID=M1VARNAME="PWR"
VALUES=PWR_SWEEPSWPCNT=2.5e4
SRCMEAS
VSAID=M2VARNAME=""VALUES=0
PWR_SWEEP=stepped(-5,12,1)PWR=5
TPID=OUT
ACPR Graph
Make a new graph named ACPR and add the two measurements shown.
One measurement is high side (+250kHz) ACPR and one is low side ( 250kHz)
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One measurement is high side (+250kHz) ACPR and one is low side (-250kHz)
EVM Graph
Make a new graph named EVM and add the measurement shown.
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Spectrum Graph
Make a new graph named Spectrum and add the measurements shown
Note that one measurement is input spectrum (TP.IN) and one is output
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o e a o e easu e e s pu spec u ( ) a d o e s ou pu
spectrum (TP.OUT). Dont forget to check dBm.
System Simulator
Tile the system diagram and graphs as shown and press the
Run/StopSystemSimulatorsbutton to start a new power sweep
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p y p p
Conclusion
We created a 2.5 GHz Amplifier and learned how to:
S t h tk d t i th AWRDE
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Set hotkeys and customize the AWRDE
Create and edit schematics and layouts
Use TQ DRC and LVS
Simulate and tune
Optimize and use statistics Use nonlinear noise analysis and contributors
Route iNets
Use ACE and Axiem in the extraction flow
U t l i (VSS)