toshiba memory solutions - qualcomm · toshiba memory solutions. ... this new nand flash memory...

© 2015 Toshiba Corporation

M2PZZ00-019Sep., 2015TOSHIBA

TOSHIBA Memory Solutions

Memory DivisionSemiconductor & Storage Products CompanyToshiba Corp.

Sept/2015

© 2015 Toshiba Corporation 2SUBJECT TO CHANGE WITHOUT NOTICE


Toshiba & Semiconductor market Introduction



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世界市場規模($b)W/W market size(B＄）

Semiconductor Market grows continuously.Worldwide Semiconductor Devices Market Trend

Oct/‘09European

financial crisis

’00 IT bubble collapsed.

’97 Asia currency crisis

’95 Han‐Shin Awaji Earthquake disaster

’11 East Japan Earthquake disaster

’98 Russia default

’99 Euro started

Sep/’08Lehman's fall

’01 US September 11 attacks

Source:result=WSTS . Estimation=TOSHIBA



New Memory3D Flash memoryNAND Flash

NAND Flash Market Trend (2000~2020)Growth of the storage market with the rapid expansion of available information.Continuous high bit growth for NAND Flash due to replacement of HDD/ODD.

Exa

byte

s [1

e18

byte

s]

Source：by TOSHIBA based on TSR(HDD), JRIA(CD/DVD/BD) & IDC White Paper(formation and available storage)

Info-plosion

Flash

HDD

Optical

Storage Market

1800EB

161EB5.4EB

CAGR 62%Overall Information

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M2PZZ00-019Sep., 2015TOSHIBANAND Flash Market Drivers (GB)

MGB

* Different grades of NAND for Enterprise, SSD, OEM and Retail

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300,000

2012 2013 2014 2015 2016 2017 2018 2019

Others

Industrial

Automotive

Consumer

Tablet

Mobile Phone

Hybirid

cSSD

eSSD

Card / USB

23%

31%

18%

20%

27%

135%

51%

84%

17%

2012~2019CAGR

PC, Printers etc

22%

SSDs are biggest driver for Si GB expansion, TOSHIBA SSD supports it ! Mobile is still big GB eater, TOSHIBA e-MMC and UFS support it !

Source : TOSHIBA


M2PZZ00-019Sep., 2015TOSHIBAToshiba NAND Flash Memory Products lineup

Toshiba NAND Flash Die and Controller Technology: create a wide variety of products support market requirements

MCP / eMCP

NAND Flash Memory / BiCS FLASH™

BENAND™, e·MMC™, UFS

microSD / SD card / CF card / FlashAir™ / SeeQVault™/ USB

Client SSDEnterprise SSD

FlashAir, BENAND and BiCS FLASH are trademarks of Toshiba Corporation.SeeQVault is a trademark of NSM Initiatives LLC.e・MMC is a trademark of JEDEC/MMCA.



・ The finest process migration with reliable quality and the advance circuit design (Cost & Quality)

・ Adopting high performance architecture, next gen. of Toggle DDR ・ Original design circuit technology achieve Low power consumption

to overcome heat issue

・ Development of the best solution by memory div.~ TOSHIBA knows TOSHIBA NAND Flash ~

NAND Flash controller

NAND Flash die

Packaging ・ Advances packaging technology to enable the largest density product in the industry with the thinnest/smallest size

Focus in Customer Satisfaction

・ Local Technical Support for World Wide Customers

・ Large investment to new memory technologies as 3D Flash Memory and STT-MRAM

Research & Development

Flexible product output ・ Capital Investment of Yokkaichi Operations

Toshiba’s commitment to NAND Flash market



Wireless and Storage Trend


M2PZZ00-019Sep., 2015TOSHIBASmart Phone Performance Trend

Wi-Fi Transfer Rate(Practical)

Music DataYouTube(HD)

HDTV(H.264)

8K HDTV

4K HDTVBD DVD

HSPA+(3.5G)

LTE(3.9G)

LTE-Advanced(4.0G)802.11n

802.11ac/ad

YouTubeVideo

Streaming

Full HD VideoBroadcast

Big Data Services

(300Mbps)

YouTube(4K)

Mobile PhoneTransfer Rate(Practical)

Dat

a Tr

ansf

er R

ate

[Mbp

s]

(6.9Gbps)

(600Mbps)

(3Gbps)

Info.-Plosion (Higher Resolution Screen/Camera/Various Sensors) will be required. Thus, demand for Higher Performance and Higher Density on Storage Memories will be maintained from long term market perception.

Memory Solutions

e・MMC UFSMigration



e-MMC UFS

Year Since 2007 Introduced in 2014

I/F

Architecture

MMC I/F (Bus, Parallel I/F) UFS I/F (Serial I/F)

Speed 400Mbps (=400MB/s, Ver.5.0 or higher)*Restricted for further improvement

5.8Gbps x 2 Lanes (=1160MB/s, Ver.2.0)

Pin count 11 (8 I/O and 3 control) 6 (4 I/O and 2 control) or 10 (in case of 2 lanes)

Signal amp. 1.8V or 1.2V 200mVp-p

Duplex Half (In serial to send and/or receive the data) Full (Simultaneously to send and receive the data)

Command Queue Supported in Ver.5.1 Support ( to improve Random performance)

Command Set MMC SCSI

e-MMCHostHost Rx

Host TxUFSHost

e-MMC features Parallel I/F which has a restriction for further performance improvement beyond HS400(400Mbps). Meanwhile, UFS features high-speed Serial I/F which maintains a performance scalability to extend in the future.

UFS v.s. e-MMC Overview


M2PZZ00-019Sep., 2015TOSHIBAUFS in Application Area

Use Case of UFS and e-MMC

Mobile PCTablet PC

SmartphoneDVCMusic Player

UFSCan resolve performance limitation with Hi-Speed Serial I/F and new features. World’s first smartphone adopted UFS as its memory storage was released in the market in 2015. UFS will take over e-MMC’s position eventually.e-MMCCurrent De fact standard solutions for Smart Phone, Tablet and other mobile applications.

Car Navigation

e-MMC and UFS can be foundin everywhere !


M2PZZ00-019Sep., 2015TOSHIBAToshiba Memory on Qualcomm Platforms

QualcommPlatform eMCP e-MMC UFS

MSM 8996

MSM 8994

MSM 8992

MSM 8976/56

MSM 8952

MSM 8929

MSM 8916MSM 8909

32GB 32GB

16GB

16GB

32GB

64GB

32GB

64GB

16GB

32GB

64GB

16GB + 16Gb LP3

8GB + 8Gb LP2/LP3

16GB + 8Gb LP3

64GB 64GB

8GB + 8Gb LP3

16GB + 16Gb LP3



Toshiba NAND Flash Memory Strategy

~ from 2D to 3D and Low Power for denser storage solutions ~


M2PZZ00-019Sep., 2015TOSHIBADesign Rule Evolution

~ 15nm : world finest geometry for NAND Flash~

1m 100mm 10mm 100μm 10μm 100nm 10nm 100pm1mm 1μm 1nm

DNA width～2nm

Hair～60μm

Honeybee～15mm

Cedar pollen～30μm

Circuit pattern

15nm

300mm

Wafer

Water flea～2mm

Lactic acid bacterium～1.2μm

Influenza virus～100nm


M2PZZ00-019Sep., 2015TOSHIBAProcess Shrink trend and TOSHIBA strategy

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180201520052000 2010 2020

Source : TOSHIBA based on ITRS

Hal

f‐pi

th s

ize

* Average of Memory/Logic

(nm)

To Date Process Shrink Cost Down Market expansion

How to get denser storage at similar area size ??From now on Shrink Speed getting slower Less cost effectiveness

3D Technology !!


M2PZZ00-019Sep., 2015TOSHIBAMemory Cell Comparison

Metal Gate

Block Layer

Floating Gate

Tunnel LayerSilicon

NAND Flash Memory Cell

2D

Charge Trap

Silicon

Tunnel Layer

Block Layer

Metal Gate

BiCS FLASH Memory Cell


M2PZZ00-019Sep., 2015TOSHIBAToshiba Developed World's First 48-layer 3D Flash memory

To enable the largest density product with

the smallest size

To boost write speed

To enhance the reliability

of W/Eendurance

Achievement of memory performance improvements with 3D Flash memory

MLC 128Gb Press Release on March 26, 2015Since making the world’s first announcement of technology for 3D Flash memory, Toshiba has continued development towards optimizing mass production. Toshiba today announced development of the world’s first 48-layer 3D Flash memory called BiCS FLASH, a MLC 128Gb device. Sample shipments of products using the new process technology start today.

Toshiba is also readying for mass production in the new Fab2 at Yokkaichi Operations, that’s now under

construction and will be completed in the first half of 2016.

TLC 256Gb Press Release on August 4, 2015Toshiba today unveiled the new generation of BiCS FLASH, a 3D Flash memory. The new device is the world’s first 256Gb (32GB) 48-layer device and also deploys industry-leading TLC technology. Sample shipments will start in September.


M2PZZ00-019Sep., 2015TOSHIBADeveloped World’s First 16st NAND Flash Memory with TSV Technology

Press Release on August 6, 2015Toshiba announced the development of the world’s first 16-die (max.) stacked NAND flash memory utilizing TSV* technology.

*Through Silicon Via：TSV technology utilizes the vertical electrodes and vias to pass through the silicon dies for the connection

This new NAND flash memory provides the ideal solution for low latency, high bandwidth and high IOPS/Watt in flash storage applications, including high-end enterprise SSD.

TSV technology achieves an I/O data rate of over 1Gbpswhich is higher than any other NAND flash memories.

Prototype verification

TSV technology reducing power consumption by approximately 50% with a low voltage supply: 1.8V to the core circuits and 1.2V to the I/O circuits and approximately 50% power reduction of write operations, read operations, and I/O data transfers.

Enables high speed data input

The General Specification of Prototype

Reduces power consumptionPackage Type NAND Dual x8 BGA-152

Storage Capacity (GB) 128 256

Number of Stacks 8 16

External Dimension

(mm)

W 14 14

D 18 18

H 1.35 1.90

Interface Toggle DDR



Toshiba next generation memory STT-MRAM

~ Volatile to Non-Volatile ~



Future computing Architecture with STT-MRAM

STT-MRAM(Non Volatile Memory) can bring…..

Less Data Moving / Less volatility management

No or Less backup(refresh) required No huge battery backup required Less leakage current Get smaller die size or larger cache size (cache use case) Better radiation resistant ….etc….

Better system performance and TCO (Total Cost of Ownership)



Future computing Architecture with MRAMFa

st /

Sm

all D

ensi

tySl

ow/L

arge

Den

sity

DRAM(e.g. 16GB/DIMM)

HDD / SSD

HDD / SSD

HDD / SSD

HDD / SSD

HDD / SSD

HDD / SSD

RAID Card

CPU CoreL1 Cache

L2 CacheL3 Cache

Host

SoC(SRAM Cache)

DRAMCache

SRAMCache

DRAMCache

BIOS Flash

SRAMCache

For Controller SoC

SoC(ASIC)/FPGA

SoC(ASIC)/FPGA

L4 : eDRAM(Intel/IBM)

Virtual Memory/StorageS/W Architecture

MRAM for Cache/Buffer/ In-Memory

w/ or w/o DRAM

CPU CoreL1 Cache

L2 CacheL3 Cache

Host

SRAMCache

HDD / SSD

HDD / SSD

HDD / SSD

HDD / SSD

RAID Card

To use faster DRAM bus

eMRAMfor

Cache/FlipFlop

MRAMCache/Buffer

MRAMBIOS/Cache

eMRAMCache for SoC

eMRAMfor

Cache/FlipFlop

Volatile Non‐Volatile

now Possible future



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RESTRICTIONS ON PRODUCT USE

toshiba memory solutions - qualcomm · toshiba memory solutions. ... this new nand flash memory...

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