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TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP120/TIP121/TIP122 Rev. 1.0.0 1 October 2008 TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor Medium Power Linear Switching Applications Complementary to TIP125/126/127 Absolute Maximum Ratings* T a = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Parameter Ratings Units V CBO Collector-Base Voltage : TIP120 : TIP121 : TIP122 60 80 100 V V V V CEO Collector-Emitter Voltage : TIP120 : TIP121 : TIP122 60 80 100 V V V V EBO Emitter-Base Voltage 5 V I C Collector Current (DC) 5 A I CP Collector Current (Pulse) 8 A I B Base Current (DC) 120 mA P C Collector Dissipation (T a =25°C) 2 W Collector Dissipation (T C =25°C) 65 W T J Junction Temperature 150 °C T STG Storage Temperature - 65 ~ 150 °C 1.Base 2.Collector 3.Emitter 1 TO-220 Equivalent Circuit B E C R1 R2 R1 8kW @ R2 0.12k W @

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Page 1: TIP120

TIP

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© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP120/TIP121/TIP122 Rev. 1.0.0 1

October 2008

TIP120/TIP121/TIP122NPN Epitaxial Darlington Transistor

• Medium Power Linear Switching Applications

• Complementary to TIP125/126/127

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Symbol Parameter Ratings Units

VCBO Collector-Base Voltage : TIP120

: TIP121

: TIP122

60

80

100

V

V

V

VCEO Collector-Emitter Voltage : TIP120 : TIP121

: TIP122

6080

100

VV

V

VEBO Emitter-Base Voltage 5 V

IC Collector Current (DC) 5 A

ICP Collector Current (Pulse) 8 A

IB Base Current (DC) 120 mA

PC Collector Dissipation (Ta=25°C) 2 W

Collector Dissipation (TC=25°C) 65 W

TJ Junction Temperature 150 °C

TSTG Storage Temperature - 65 ~ 150 °C

1.Base 2.Collector 3.Emitter

1 TO-220

Equivalent Circuit

B

E

C

R1 R2

R1 8kW@R2 0.12kW@

Page 2: TIP120

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© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP120/TIP121/TIP122 Rev. 1.0.0 2

Electrical Characteristics* Ta=25°C unless otherwise noted

* Pulse Test: Pulse Width£300ms, Duty Cycle£2%

Symbol Parameter Test Condition Min. Typ. Max. Units

VCEO(sus) Collector-Emitter Sustaining Voltage

: TIP120: TIP121

: TIP122

IC = 100mA, IB = 0 60 80

100

VV

V

ICEO Collector Cut-off Current

: TIP120: TIP121

: TIP122

VCE = 30V, IB = 0 VCE = 40V, IB = 0

VCE = 50V, IB = 0

0.50.5

0.5

mAmA

mA

ICBO Collector Cut-off Current

: TIP120: TIP121

: TIP122

VCB = 60V, IE = 0 VCB = 80V, IE = 0

VCB = 100V, IE = 0

0.20.2

0.2

mAmA

mA

IEBO Emitter Cut-off Current VBE = 5V, IC = 0 2 mA

hFE * DC Current Gain VCE = 3V,IC = 0.5A

VCE = 3V, IC = 3A

1000

1000

VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 12mA IC = 5A, IB = 20mA

2.04.0

VV

VBE(on) * Base-Emitter On Voltage VCE = 3V, IC = 3A 2.5 V

Cob Output Capacitance VCB = 10V, IE = 0, f =

0.1MHz

200 pF

Page 3: TIP120

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© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP120/TIP121/TIP122 Rev. 1.0.0 3

Typical characteristics

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 3. Output and Input Capacitance vs. Reverse Voltage

Figure 4. Safe Operating Area

Figure 5. Power Derating

0.1 1 10100

1000

10000

VCE = 4V

hF

E,

DC

CU

RR

EN

T G

AIN

IC[A], COLLECTOR CURRENT

0.1 1 100.5

1.0

1.5

2.0

2.5

3.0

3.5IC = 250IB

VCE(sat)

VBE(sat)

VB

E(s

at)

, V

CE(s

at)

[V],

SA

TU

RA

TIO

N V

OL

TA

GE

IC[A], COLLECTOR CURRENT

0.1 1 10 10010

100

1000

Cob

f=0.1MHz

VCB[V], COLLECTOR-BASE VOLTAGE

VEB[V], EMITTER-BASE VOLTAGE

Co

b[p

F] C

ib[p

F], C

AP

AC

ITA

NC

E

Cib

1 10 1000.01

0.1

1

10

TIP121

TIP122

TIP120

DC

5ms

100ms500ms

1ms

I C[A

], C

OLLE

CT

OR

CU

RR

EN

T

VCE

[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

PC[W

], P

OW

ER

DIS

SIP

AT

ION

TC[oC], CASE TEMPERATURE

Page 4: TIP120

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© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP120/TIP121/TIP122 Rev. 1.0.0 4

Mechanical Dimensions

TO220

Page 5: TIP120

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IP1

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© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP120/TIP121/TIP122 Rev. A1 5

Rev. I31

TRADEMARKSThe following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use andis not intended to be an exhaustive list of all such trademarks.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF

THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSEUNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF

FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE

PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body, or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected to result

in significant injury to the user.

2. A critical component is any component of a life supportdevice or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or

system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx®

Build it Now™CorePLUS™

CROSSVOLT™

CTL™Current Transfer Logic™

EcoSPARK®

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™FACT®

FAST®

FastvCore™FPS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™GTO™

i-Lo™

IntelliMAX™ISOPLANAR™

MegaBuck™

MICROCOUPLER™MicroFET™

MicroPak™

MillerDrive™Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

®

PDP-SPM™

Power220®

Power247®

POWEREDGE®

Power-SPM™

PowerTrench®

Programmable Active Droop™QFET®

QS™

QT Optoelectronics™Quiet Series™

RapidConfigure™

SMART START™SPM®

STEALTH™

SuperFET™SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™The Power Franchise®

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™TinyWire™

µSerDes™

UHC®

UniFET™

VCX™

Datasheet Identification Product Status Definition

Advance Information Formative or In DesignThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionThis datasheet contains preliminary data; supplementary data will be pub-lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontin-ued by Fairchild semiconductor. The datasheet is printed for reference infor-mation only.