THIN FILMS EPITAXIAL GROWTH

AND NANOSTRUCTURES

PROCEEDINGS OF THE EMRS SPRING CONFERENCE STRASBOURG, FRANCE, JUNE 16-19, 1998

Edited by

E. KASPER Institut für Halbleitertechnik, University of Stuttgart, Germany

K.L. WANG UCLA, CA, USA

H. HASEGAWA Interface Quantum Electronics, Hokkaido University, Sapporo, Japan

ELSEVIER AMSTERDAM - LAUSANNE - NEW YORK - OXFORD - SHANNON - SINGAPORE - TOKYO

ELSEVIER Volume 336, 30 December 1998

Contents

thnn mums

Preface ix

Self-assembled structures Shape, size, strain and correlations in quantum dot systems studied by grazing incidence X-ray scattering methods*

Т.Н. Metzger, I. Kegel, A. Lorke, J. Peisl, J. Schulze, I. Eisele, P. Schittenhelm, G. Abstreiter 1 Self-aggregation of InAs quantum dots on (M 1) GaAs substrates

S. Sanguinetti, S.C. Fortina, A. Miotto, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, L. Eaves 9 Growth of solution cast macromolecular тг-conjugated nanoribbons on mica

P. Samori, V. Francke, K. Müllen, J.P. Rabe 13

Adsorption induced giant faceting of vicinal Si(001) M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, D. Kahler, Th. Schmidt, E. Bauer 16

Novel growth methods

Formation of highly uniform InGaAs ridge quantum wires by selective molecular beam epitaxy on novel InP patterned substrates H. Fujikura, M. Kihara, H. Hasegawa 22

Retarded diffusion of boron in Si due to the formation of an epitaxial CoSi2 layer L. Kappius, H.L. Bay, S. Mantl, A.K. Tyagi, U. Breuer, J.S. Becker 26

Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization M. Kammler, D. Reinking, K.R. Hofmann, M. Horn-von Hoegen 29

Self-assembly and strain adjustment (poster session)

Growth of Ge on H-terminated Si(l 11) surface K. Ishii, H. Kuriyama, K. Ezoe, T. Yamamoto, M. Ikeda, S. Matsumoto 34

ТЕМ study of InAs self-assembled quantum dots in GaAs E. Müller, E. Ribeiro, T. Heinzel, K. Ensslin, G. Medeiros-Ribeiro, P.M. Petroff 38

Relation of initial thin film formation to defects induced by low energy ions H.-A. Durand, К. Sekine, К. Etoh, К. Ito, I. Kataoka 42

Role of hydrogen during Si capping of strained Ge or Si^Ge^. hut clusters D. Dentel, J.L. Bischoff, L. Kubler, D. Bolmont 49

Cluster-size distribution of SiGe alloys grown by MBE N. Pinto, R. Murri, R. Rinaldi 53

Structural properties of Ge nano-crystals embedded in Si02 films from X-ray diffraction and Raman spectroscopy A.G. Rolo, M.I. Vasilevskiy, O. Conde, M.J.M. Gomes 58

Growth of III V semiconductor layers on Si patterned substrates T.Ya. Gorbach, R.Yu. Holiney, L.A. Matveeva, P.S. Smertenko, S.V. Svechnikov, E.F. Venger, R. Ciach, M. Faryna . . 63

The influence of carbon on the surface morphology of Si(100) and on subsequent Ge island formation R. Butz, H. Lüth . Г 69

Composition and structure of Ge islands grown on Si(001) and of SiGe grown on Si mesa D.V. Regelman, V. Magidson, R. Beserman, K. Dettmer 73

ТЕМ studies of self-organization phenomena in CdSe fractional monolayers in a ZnSe matrix A. Sitnikova, S. Sorokin, I. Sedova, T. Shubina, A. Toropov, S. Ivanov, L. Falk, M. Willander 76

Study of InAs quantum dots in GaAs prepared on misoriented substrates J. Oswald, E. Hulicius, V. Vorlicek, J. Pangräc, K. Melichar, T. Simecek, G. Lippold, V. Riede 80

* Invited paper.

vi Contents

Orientation of aluminum nuclei on Si(100) and Si(l 11) С Bisch, E. Boellaard, G.C.A.M. Janssen, P.F.A. Alkemade, S. Radelaar 84

Epitaxial growth at high rates with LEPECVD С Rosenblad, T. Graf, J. Stangl, Y. Zhuang, G. Bauer, J. Schulze, H. von Känel 89

Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy E. Müller, R. Hartmann, С. David, D. Grutzmacher 92

ТЕМ investigation of the dependence of structural defects on prelayer formation in GaAs-on-Si thin films Ch. B. Lioutas, A. Delimitisi, A. Georgakilas 96

STM study of step graded Si,-.tGev/Si(001) buffers M. Kummer, В. Vögeli, H. Von Känel 100

Ion assisted MBE growth of SiGe nanostructures M. Bauer, M. Oehme, K. Lyutovich, E. Kasper 104

Coalescence of germanium islands on silicon С Schöllhorn, M. Oehme, M. Bauer, E. Kasper 109

Dislocation pattern formation in epitaxial structures based on SiGe alloys T.G. Yugova, V.l. Vdovin, M.G. Mil'vidskii, L.K. Orlov, VA. Tolomasov, A.V. Potapov, N.V. Abrosimov 112

Defect distribution and morphology development of SiGe layers grown on Si(100) substrates by LPE A.M. Sembian, M. Konuma, I. Silier, A. Gutjahr, N.. Rollbühler, F. Banhart, S. Moorthy Babu, P. Ramasamy 116

Annealing of CaF2 adlayers grown on Si(l 11): investigations of the morphology by atomic force microscopy J. Wollschläger, H. Pietsch, R. Kayser, A. Klust 120

The influence of stress on growth instabilities on Si substrates L. Lapena, 1. Berbezier, B. Gallas, B. Joyce 124

Electronic devices

Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques* D.J. Paul, B. Coonan, G. Redmond, B.J. O'Neill, G.M. Crean, В.. Holländer, S. Mantl, I. Zozoulenko, K.-F. Berggren, J.-L. Lazzari, F. Arnaud d'Avitaya, J. Derrien 130

Assessment of transport parameters for the design of high speed Si/SiGe HBTs with compositionally graded base J. Weiler, H. Jorke, K. Strohm, J.-F. Luy, H. Kibbel, H.-J. Herzog, R. Sauer 137

Carrier mobilities in modulation doped Sii-^Gej. heterostructures with respect to FET applications G. Hock, M. Glück, Т. Hackbarth, H.-J. Herzog, E. Kohn 141

Simulation of a non-invasive charge detector for quantum cellular automata G. Iannaccone, С Ungarelli, M. Macucci, E. Amirante, M. Governale 145

Growth (poster session) Domain wall splitting and creation of the fine domain structure

S. Dorfman, D. Fuks, A. Gordon, E. Kotomin 149 Pulsed laser deposition of SmBaCuO thin films

A. Di Trolio, A. Morone, S. Orlando, G. Cappuccio 153 Epitaxial zirconia films on sapphire substrates

С Mary, R. Guinebretiere, G. Trolliard, B. Soulestin, P. Villechaize, A. Dauger 156 Growth and magnetism of Co/NiO(l 11) thin films

С Mocuta, A. Barbier, G. Renaud, B. Dieny 160 Epitaxial growth of LiNbOB on aAl2O3(0001)

F. Veignant, M. Gandais, P. Aubertl, G. Garry 163 MgO surface microstructure and crystalline coherence of Co/Pt superlattices

P. Haibach, J. Köble, M. Huth, H. Adrian 168 Fabrication and electrical properties of sol-gel derived (BaSr)Ti03 thin films with metallic LaNi03 electrode

D. Wu, A. Li, Z. Liu, H. Ling, С Z. Ge, X. Liu, H. Wang, M. Wang, P. Lü, N. Ming 172

Two-dimensional and zero-dimensional structures of semimagnetic semiconductors prepared by pulsed laser deposition A.I. Savchuk, I.D. Stolyarchuk, S.V. Medynskiy, A. Perrone, P.I. Nikitin 176

RHEED investigation of limiting thickness epitaxy during low-temperature Si-MBE on (100) surface A.I. Nikiforov, B.Z. Kanter, O.P. Pchelyakov 179

Contents vii

The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(l 11) surface A.I. Nikiforov, V.A. Markov, V.A. Cherepanov, O.P. Pchelyakov 183

Electrical properties of HgCdTe films obtained by laser deposition G. Wisz, I. Virt, M. Kuzma 188

The growth kinetics of Sii_vGex layers from SiH4 and GeH4 A.V. Potapov, L.K. Orlov, S.V. Ivin 191

Crystal microstructure of PbTe/Si and PbTe/Si02/Si thin films Y.A. Ugai, A.M. Samoylov, M.K. Sharov, A.V. Tadeev 196

The growth of an intermediate CoSi phase during the formation of epitaxial CoSi2 by solid phase reaction M. Falke, В. Gebhardt, G. Beddies, S. Teichert, H.-J. Hinneberg 201

Valence band splitting in Cd(1-v)ZnvTe epilayers K. Cohen, R. Beserman, S. Stolyarova, R. Weil, Y. Nemirovsky 205

Diffusion of Cd, Mg and S in ZnSe-based quantum well structures M. Straßburg, M. Kuttler, U.W. Pohl, D. Bimberg 208

Epitaxial growth of ZnS on CdS in CdS/ZnS nanostractures C. Ricolleau, L. Audinet, M. Gandais, T. Gacoin 213

Correlation between the sign of strain and the surface morphology and defect structure of InAlAs grown on vicinal (lll)BInP A. Georgakilas, K. Tsagaraki, K. Harteros, Z. Hatzopoulos, A. Vila, N. Becourt, F. Peiro, A. Cornet, N. Chrysanthakopou-los, M. Calamiotou 218

Allotaxy in the Ni-Si system S. Teichert, M. Falke, H. Giesler, G. Beddies, H.J. Hinneberg 222

Influence of grown-in defects on the optical and electrical properties of Si/Si ;-xGev/Si heterostructures R. Loo, M. Caymax, E. Simoen, D. Howard, M. Goryll, D. Klaes, L. Vescan, D. Gravesteijn, H. Pettersson, X. Zhang . 227

Low temperature epitaxial growth of Si on Si(l 11) by gas-source MBE with heat-pulse annealing T. Ishikawa, H. Okumura, T. Akane, M. Sano, S. Giraud, Y. Nakabayashi, S. Matsumoto 232

Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy Z.M. Jiang, C.W. Pei, L.S. Liao, X.F. Zhou, X.J. Zhang, X. Wang, Q.J. Jia, X.M. Jiang, Z.H. Ma, T. Smith, I.K. Sou . . 236

Island and wire formation

Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition P. Boucaud, V. Le Thanh, S. Sauvage, D. Debarre, D. Bouchier, J.-M. Lourtioz 240

Morphology and luminescence of Ge islands grown on Si(001) M. Goryll, L. Vescan, H. Lüth 244

C-induced Ge dots: a versatile tool to fabricate ultra-small Ge nanostractures O.G. Schmidt, С Lange, К. Eberl, О. Kienzle, F. Ernst 248

Lateral ordering of self-assembled Ge islands J-h. Zhu, K. Brunner, G. Abstreiter, O. Kienzle, F. Ernst 252

Self organization of Ge dots on Si substrates: influence of misorientation M. Abdallah, I. Berbezier, P. Dawson, M. Serpentini, G. Bremond, B. Joyce 256

Analysis and modelling of nanostractures Low-energy electron microscopy of nanoscale three-dimensional SiGe islands on Si(100)*

P. Sutter, E. Mateeva, J.S. Sullivan, M.G. Lagally 262 X-ray diffraction analysis of strain relaxation in free standing and buried GaAs/GalnAs/GaAs SQW lateral structures

N. Darowski, U. Pietsch, K.-H. Wang, A. Forchel, Q. Shen, S. Kycia 271 Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation

J.D. Torre, M.D. Rouhani, G. Landa, A.M. Rocher, R. Malek, D. Esteve 277 Early stages of growth and nanostructure of Pb(Zr,Ti)03 thin films observed by atomic force microscopy

F. Craciun., P. Verardi, M. Dinescu, F. Dinelli, O. Kolosov 281 Dynamical properties of trions and excitons in modulation doped CdTe/CdMgZnTe quantum wells

D. Brinkmann, J. Kudrna, E. Vanagas, P. Gilliot, R. Levy, A. Arnoult, J. Cibert, S. Tatarenko 286 Structural studies of epitaxial PbTi03 films by optical second harmonic generation

E.D. Mishina, N.E. Sherstyuk, T.V. Misyuraev, A.S. Sigov, A.M. Grishin, Th. Rasing, O.A. Aktsipetrov 291

VIM Contents

Spectroscopic study of nanocrystalline ТЮ2 thin films grown by atomic layer deposition A. Suisalu, J. Aarik, H. Mändar, I. Sildos 295

Vertical MOS transistor

The vertical heterojunction MOSFET* K. De Meyer, M. Caymax, N. Collaert, R. Looa, P. Verheyen 299

Selectively grown vertical Si MOS transistor with reduced overlap capacitances D. Klaes, J. Moers, A. Tönnesmann, S. Wickenhäuser, L. Vescan, M. Marso, T. Grabolla, M. Grimm, H. Lüth 306

Optimization of the channel doping profile of vertical sub-100 nm MOSFETs F. Kaesen, С Fink, K.G. Anil, W. Hansch, T. Doll, T. Grabolla, H. Schreiber, I. Eisele 309

Comparison of lateral and vertical Si-MOSFETS with ultra short channels D. Behammer, M. Zeuner, T. Hackbarth, J. Herzog, M. Schäfer, Т. Grabolla 313

New virtual substrate concept for vertical MOS transistors E. Kasper, К. Lyutovich, M. Bauer, M. Oehme 319

Optical and electrical characterization of SiGe layers for vertical sub-100 nm MOS transistors X. Zhang, P. Unelind, M. Kleverman, J. Olajos 323

Analysis (poster session) Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures

I. Mikulskas, D. Brinkmann, К. Luterova, R. Tomasiunas, B. Honerlage, J.V. Vaitkus, R.L. Aulomhard, T. Cloitre . . . 326 Formation of zero-dimensional hole states in Ge/Si heterostructures probed with capacitance spectroscopy

A.I. Yakimov, A.V. Dvurechenskii, A.I. Nikiforov, O.P. Pchelyakov 332 Hole mobilities in pseudomorphic Si|-x-vGexCv alloy layers

R. Duschl, H. Seeberger, K. Eberl . . 336 Thin tantalum pentoxide films deposited by photo-induced CVD

J-Y. Zhang, B. Lim, I.W. Boyd 340 Tunnelling currents in very narrow p+-n+ junctions

G. Reitemann, E. Kasper, H. Kibbel, H. Jorke 344 Optical on wafer measurement of Ge content of virtual SiGe-substrates

M. Oehme, M. Bauer 347 Oscillatoric bias dependence of DC-electric field induced second harmonic generation from Si-Si02 multiple quantum wells

V.V. Savkin, A.A. Fedyanin, F.A. Pudonin, A.N. Rubtsov, O.A. Aktsipetrov 350 The determination of e14 in (11 l)B-grown (In,Ga)As/GaAs strained layers

P. Ballet, P. Disseix, J. Leymarie, A. Vasson, A.-M. Vasson, R. Grey 354 Photoluminescence studies of As-P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy

A. Aurand, J. Leymarie, A. Vasson, A.M. Vasson, M. Mesrine, С Deparis, M. Leroux 358 Characterization of inhomogeneous films by multiple-angle ellipsometry

S. Colard, M. Mihailovic 362 Magnetoluminescence measurements of two-dimensional hole gas

M. Ciorga, L. Bryja, J. Misiewicz, O.P. Hansen 366 Optical pumping in strained In^Ga^As/CaAs quantum wells

F. Hassen, H. Sghaier, H. Maaref, R. Murray 370 RF-sputtering deposition of A1/A1203 multilayers

L. Paven-Thivet, С Malibert. Ph. Houdy, P.A. Albouy 373 Optical studies of carrier transport phenomena in CdSe/ZnSe fractional monolayer superlattices

T.V. Shubina, A.A. Toropov, S.V. Sorokin, S.V. Ivanov, P.S. Kop'ev, G.R. Pozina, J.P. Bergman, B. Monemar 377 Raman and photoreflectance studies of electronic band bending at ZnSe/GaAs interfaces

O. Pages, H. Erguig, V. Wagner, A. Zaoui, J.P. Laurenti, J. Gueurts, H. Aourag, R.L. Aulombard, M. Certier 381 ТЕМ and AFM study of perovskite conductive LaNi03 films prepared by metalorganic decomposition

A. Li, Di Wu, Z. Liu, C.Z. Ge, X. Liu, G. Chen, N. Ming 386 Author Index of Volume 336 391 Subject Index of Volume 336 392