(660 oC)

RegulatorMFC (mas flow controller)

(Green)

(Grey)

(Red)

(無水) hydrogen chloride HCl

(C2HCl3) (C2H3Cl3)

Burn Box + Scrubber Scrubber

Susceptor

Thermocouple

NiAl

NiCrNiCr

(失透)

Susceptor

etches way contaminant.

Susceptor

of

its

CVD Precursor SiH4, SiH2Cl2, SiHCl3, and SiCl4

(~ 5000Å)

prevents channeling of ions and contamination from sputtered PR(100Å ~ 200Å)

Pad oxide prevents tensile stress on Si from thick nitride.

Barrier oxide prevents contamination from CVD USG.

SC: Standard Cleaning

ed

+ 1 atm.

He‐Ne laser 633nm

Film thickness & refractive index

Various wavelength