thermal and layout considerations for integrated fet chargers

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Thermal and Layout considerations for Integrated FET chargers Charles Mauney October 2013

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Thermal and Layout considerations for Integrated FET chargers. Charles Mauney October 2013. Agenda. Why this Topic? PCB Electrical Characteristics DC Parasitics (Resistance) AC Parasitics Grounds and Grounding PCB Thermal Characteristics Conduction Concepts Convection Concepts - PowerPoint PPT Presentation

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Page 1: Thermal and Layout considerations for  Integrated FET chargers

Thermal and Layout considerations for Integrated FET chargers

Charles MauneyOctober 2013

Page 2: Thermal and Layout considerations for  Integrated FET chargers

AgendaWhy this Topic?

PCB Electrical Characteristics• DC Parasitics (Resistance)• AC Parasitics• Grounds and Grounding

PCB Thermal Characteristics• Conduction Concepts• Convection Concepts

Examples• Common “Poor” Thermal Layouts• Good Thermal Layout• Good Electrical Layout

Page 3: Thermal and Layout considerations for  Integrated FET chargers

Why this Topic?What design component is most often Overlooked?

PCB Design• PCB is as critical as any other component• Use the same care with the design of the PCB as other

designers take with designing the IC and FET switches

Why is layout Important?• Placement of Components effects connection impedance• Ground Plane design affects connection impedance• Electrical/thermal impedance affects current and heat flow• AC Current across impedance causes noise• Heat flow across thermal impedance causes temperature rise

Page 4: Thermal and Layout considerations for  Integrated FET chargers

AgendaWhy this Topic?

PCB Electrical Characteristics• DC Parasitics (Resistance)• AC Parasitics• Grounds and Grounding

PCB Thermal Characteristics• Conduction Concepts• Convection Concepts

Examples• Common “Poor” Thermal Layouts• Good Thermal Layout• Good Electrical Layout

Page 5: Thermal and Layout considerations for  Integrated FET chargers

Copper is Good, but Not a Perfect Conductor

• Optimizing Placement, Copper Thickness & Routing impacts– Regulation– Transient Response– Efficiency– Temperature rise– Noise immunity

Page 6: Thermal and Layout considerations for  Integrated FET chargers

Metals are good ConductorsSome better than others – ρ(Ω-length)

Material ρ(mW-cm) ρ(mW-in)

Copper 1.70 0.67

Gold 2.2 0.87

Lead 22.0 8.66

Silver 1.5 0.59

Silver (Plated) 1.8 0.71

Tin -Lead 15 5.91

Tin (Plated) 11 4.33

Palladium 11 4.3

wtl

AlR yresistivit

w

t A

Curre

nt F

low

Page 7: Thermal and Layout considerations for  Integrated FET chargers

Count Squares to Estimate Trace Resistance

• Copper resistivity is 0.67 mW in. at 25°C and doubles for 254°C rise

Copper Weight(Oz.)

Thickness(mm/mils)

mW per Square(25oC)

mW per Square(100oC)

1/2 0.02/0.7 1.0 1.3

1 0.04/1.4 0.5 0.65

2 0.07/2.8 0.2 0.26

t

Current Flow

tR

tR

)()(

Page 8: Thermal and Layout considerations for  Integrated FET chargers

Vias Have Resistance Too• Typical rule of thumb is 1 A to 3 A per via

AlR

)( 22io rr

lR

W

mR 7.0)009.001.0(

06.0107.022

6

5 mm(20 mils)

4.5 mm(18 mils)

1.5 mm(60 mils)

CurrentFlow

A

Page 9: Thermal and Layout considerations for  Integrated FET chargers

AgendaWhy this Topic?

PCB Electrical Characteristics• DC Parasitics (Resistance)• AC Parasitics• Grounds and Grounding

PCB Thermal Characteristics• Conduction Concepts• Convection Concepts

Examples• Common “Poor” Thermal Layouts• Good Thermal Layout• Good Electrical Layout

Page 10: Thermal and Layout considerations for  Integrated FET chargers

Self Inductance of PWB Traces• Due to the natural logarithmic relationship, large

changes in conductor width have minimal impact on inductance

w_mm (in) t_mm (in) Inductance nH/cm (nH/in)

0.25 (0.01) 0.07 (0.0028) 10 (24)

2.5 (0.1) 0.07 (0.0028) 6 (14)

12.5 (0.5) 0.07 (0.0028) 2 (6)

wt

Curre

nt Flo

w

)(215

)(212

innHwt

nL

cmnHwt

nL

Page 11: Thermal and Layout considerations for  Integrated FET chargers

PWB Traces Over Ground Planes• Substantial inductance reduction• Inductance inversely proportional to width

nH/cm 2whlL

nH/in 5whlL

Metric English

h (mm) w (mm) Inductance (nH/cm) h (in) w (in) Inductance

(nH/in)

0.25 2.5 0.2 0.01 0.1 0.5

1.5 2.5 1.2 0.06 0.1 3.0

w

h

CurrentFlow

Page 12: Thermal and Layout considerations for  Integrated FET chargers

Leakage Inductance in AC (Pulsed) Circuits Matters – How much inductance is in a 3” wire?

• HP 4275A LCR meter – Sample tested at 1MHz• Shows 79nH for this loop of wire

Page 13: Thermal and Layout considerations for  Integrated FET chargers

Inductance – Think again!PCB with copper on bottom

Placed next to loop

PCB with copper on topPlaced next to loop

AC current in loop generates opposing currents in copper

plane to partially cancel inductance

Wire loop area reduced; <L Same Loop area with PCB, copper on bottom; <L PCB with copper on top; <L

Page 14: Thermal and Layout considerations for  Integrated FET chargers

Leakage Inductance – 3” Wire cont’

• Loop area and length determine inductance• Leakage Inductance (Parasitic) becomes charged with current • When Current is abruptly stopped – Leakage inductance’s

voltage flips polarity and discharges energy typically as noise

Wire loop twisted – Reversing of current cancels

inductance; <L

PCB with copper on bottom added but loop does not

produce much of a field to cancel inductance

PCB with copper on top helps just a bit.

Page 15: Thermal and Layout considerations for  Integrated FET chargers

Sample Capacitance CalculationConsider two 10 mil traces crossing with 10 mil

PWB thickness

Capacitance is additive with multiple connected pads

tA

C OR

00025.000025.0

36105

29

C

pFC 01.0Note: 10 mils = 0.00025 m

A = 0.00025 m x 0.00025 m

t

Page 16: Thermal and Layout considerations for  Integrated FET chargers

Chaos Created by Noise Injection Ten 0.05 x 0.02 in2 pads in summing junction can

increase parasitic capacitance to 2 pF

2

6

3

4

7

8 GND

RT

FB

COMP

DTC

VCC

5

1

SCP

OUTC7R9

C6

R4

C13

R6

R5

CPARASITIC

R7

R3C5

C4+ 2

1R1

C8

Q1

D1C9

L2

VOUT

GND

+

U1TL5001D

CriticalComponents

VIN

Keep high impedance node area small and away from switching waveforms – above clean ground

Page 17: Thermal and Layout considerations for  Integrated FET chargers

Bypass Capacitor Layout• Minimize lead inductance

– Short lengths Minimizes loop area– Use ground planes where possible– Bring current path across capacitor terminals

• Parallel different capacitor types – Reduced impedance across a frequency band

• Parallel different ceramic capacitors values and sizes

– Reduce impedance in the 2-20 MHz frequency range (0.1 mF & 0.01 mF)

• Use experienced Layout Person– Understands Circuit Operation and Layout concepts.

Page 18: Thermal and Layout considerations for  Integrated FET chargers

Capacitors Are Inductive…Above Their Self-Resonant Frequency

• Measured ESL correlates well with rule of thumb inductance of 15 nH/inch

• High frequency converters use Ceramic caps of different values (10u, 1u, 0.1uF) for low impedance (low inductance) in MHz range.

5 nH

10 mF Ceramic

1000 mFOSCON

180 mFSolid

Polymer

470 mFTantalum

0.1 100001 10 100 10000.001

0.01

0.1

1

10Z C

AP -

Impe

danc

e - W

f - Frequency - kHz

1 nH

Page 19: Thermal and Layout considerations for  Integrated FET chargers

And Inductors Turn Into Capacitors• Inductive at low frequency• High frequency, distributed capacitance and mr

reduction

• Maximize inductance by choosing inductor with resonance above “switching edge” frequencies

1 k

1

Impe

danc

e - k

W

Frequency - Hz

10

100

L = 28 mH

C = 23 pF

10 k 100 k 1 M

Wire wound inductor Chip Inductor

Page 20: Thermal and Layout considerations for  Integrated FET chargers

Effects of Layout Impedances

QH

QL

CIN

VIN+

VIN-L

RS

VOUT- VOUT+

COUT1

COUT2

• Good ground plane• Small high frequency current loop

• Parasitics, LL, are reduce with integrated FETS

• Small area for high dv/dt node

Other Circuit

VIN VOUT

LQH QL CO

CIN

LL

LL

Page 21: Thermal and Layout considerations for  Integrated FET chargers

Connect Power Components Properly • Draw schematic to reflect desired location relative to other

components. • Understand circuit operation and AC currents• A pulses current is a noise signal – return this current to its source

in smallest distance (loop area) – Loop area is antenna.• Place power stage to minimize connection impedance

– Consider two sided mounting, FET’s one side, cap other– Use full ground planes to produce low impedance ground connection– Use VIAs to connect all component grounds to ground plane – Minimizes

return impedance.

C14330 mF16 V

C310 mF

Q4

Q2

L24.7 mH

1

2

GND

5 V at13 A

VIN

+J2

HighCurrentPath

• Any inductance in di/dt path results in ringing on switched node

• Proper design can eliminate need for snubber

Page 22: Thermal and Layout considerations for  Integrated FET chargers

Watch Out for Parasitic Components• Wiring inductance

– Added “parasitic” inductance raises impedance of low impedance circuits (filters, power switching) making them less effective.

– Use wide conductors and ground planes to minimize impedance• Board capacitance

– Allows path for AC signals– Good if part of design; Bad when coupling “noise” into sensitive

circuits. – High impedance nodes are susceptible to switching waveforms.

• Magnetic coupling– Loop to loop, minimize loop areas, use ground planes

Page 23: Thermal and Layout considerations for  Integrated FET chargers

AgendaWhy this Topic?

PCB Electrical Characteristics• DC Parasitics (Resistance)• AC Parasitics• Grounds and Grounding

PCB Thermal Characteristics• Conduction Concepts• Convection Concepts

Examples• Common “Poor” Thermal Layouts• Good Thermal Layout• Good Electrical Layout

Page 24: Thermal and Layout considerations for  Integrated FET chargers

Single Point GroundsSeries

• Simple wiring – one layer• Common impedance causes

different potentials• High impedance at high frequency

(>10 kHz)

Parallel

• Complicated wiring – one layer• Reduced differential potentials at

low frequencies• High impedance at high frequency

(>10 kHz)

1 2 3 1 2 3

Page 25: Thermal and Layout considerations for  Integrated FET chargers

Multipoint Grounding

• Ground plane provides low impedance between circuits to minimize potential differences

• Also, reduces inductance of circuit traces• Goal is to contain high frequency currents in individual circuits

and keep out of ground plane• Segregated circuits

– No current between Circuits– No current No ground noise shared between circuits, V=IR

1 2 3

Ground Plane

Page 26: Thermal and Layout considerations for  Integrated FET chargers

AgendaWhy this Topic?

PCB Electrical Characteristics• DC Parasitics (Resistance)• AC Parasitics• Grounds and Grounding

PCB Thermal Characteristics• Conduction Concepts• Convection Concepts

Examples• Common “Poor” Thermal Layouts• Good Thermal Layout• Good Electrical Layout

Page 27: Thermal and Layout considerations for  Integrated FET chargers

Modeling Temperature Rise• Rjc: Junction to Case (PWRPAD of

IC), thermal resistance (ºC/W)

• Rcs: Case to Heat Sink (PWRPAD-IC to PWRPAD-PCB), thermal resistance

• Rsa: Sink (PCB surface) to ambient resistance

Interface Material

Heat Sink

Semiconductor Die

Package Case

RSA

RCS

RJC

GND = TA

I = PDISS

T = PDISS x (RJC + RCS + RSA) + TA

Electrical Equivalent

• Heat is conducted through device base into circuit board

• It spreads laterally through copper conductors

• Final path is convection cooling from board surface to ambient

Page 28: Thermal and Layout considerations for  Integrated FET chargers

Thermal Conductivity of Other MaterialsMaterial W/(cm ºC) W/(in ºC)

Air 0.0002 0.0007

Alumina 0.2 0.9

Aluminum 1.8 4.4

Beryllia 1.6 4

Copper (OFC) 3.6 9

Epoxy (PC board) 0.0003 0.007

Ferrite 0.04 0.10

Silver 3.8 9.5

Steel 0.15 0.60

Tin-lead 0.4 1.00

)( AlR

• Thermal Conductivity is in the denominator Thus a large value is good for a low thermal impedance.• Silver is slightly better than copper but costs too much• FR4 (Epoxy) is very poor.

Page 29: Thermal and Layout considerations for  Integrated FET chargers

Thermal ResistanceA single via has about 100°C/W thermal resistance

and they can be paralleled

)( AlR

)( 22io rr

lR

WCR o /100

0.5 mm(0.02 in)

0.45 mm(0.018 in)

1.5 mm(0.06 in)

HeatFlow

• Multiple VIAs will reduce the thermal resistance proportionally

10VIAs would be 10C/Wo

Page 30: Thermal and Layout considerations for  Integrated FET chargers

Lateral Heat Flow

Metric English

2-oz, 0.07-mmthick copper

2-oz, 2.8-milsthick copper

1.5-mm FR4 0.06-inch FR4

WCR

R

tllR

o /40

)07.04.0(1

)(

WCR

R

o /2400

)5.100028.0(1

WCR

R

ttllR

o /40

)0028.09(1

)(1

)(

WCR

R

o /2400

)06.0007.0(1

Q

t

• A square of 2oz copper with 1W of heat applied will result in a 40C rise, R = 40C/W

• A square of 0.060” thick FR4 with 1W of heat applied will result in a 2400C rise, R = 2400C/W

• Only copper spreads out heat

Page 31: Thermal and Layout considerations for  Integrated FET chargers

Thermal Resistance Gap • Copper plane has cut out due to routing a signal.• Thermal resistance gap significantly adds to temperature rise

)( wtlR

English)06.01007.0(

01.0

R

Metric )5.14.250003.0(

25.0

R

PWB1.5 mm0.060 in

0.25 mm0.01 in

w = 2.54 cmor 1 inchCopper

• Cutting the Cu plane added (23C/W – 0.018C/W = 23C/W)

R = 23C/W for 10mil gap of FR4

English)06.019(

01.0

R R = 0.018 C/W for 10mil gap of Cu

Page 32: Thermal and Layout considerations for  Integrated FET chargers

Thermal Resistance for FR4Through board is much less than board-ambient

)( AtR

Metric )4.254.250003.0(

5.1

R

English )1007.0(

06.0

R

in. 1sqfor C/W 8

• 1W applied to 0.125 in sq, 0.060” thick, FR4 (IC area) has temp rise of 548C• 1W applied to 1in sq, 0.06” thick, FR4 has a temp rise of 8C.• FR4 ok for thermally conductivity through large areas. • Poor through small area - IC power pad (need VIAs) or cross-section of PCB.

Q

t

Page 33: Thermal and Layout considerations for  Integrated FET chargers

AgendaWhy this Topic?

PCB Electrical Characteristics• DC Parasitics (Resistance)• AC Parasitics• Grounds and Grounding

PCB Thermal Characteristics• Conduction Concepts• Convection Concepts

Examples• Common “Poor” Thermal Layouts• Good Thermal Layout• Good Electrical Layout

Page 34: Thermal and Layout considerations for  Integrated FET chargers

Convection Cooling

• h - heat transfer coefficient ~0.006 W/in2/°C, 0.001 W/cm2/°C for air

• 1 W/1in2 =166°C rise; 1 W/cm2 = 1000°C rise • Equation for the nonlinearity of h

)( hAreaPT

)100(7.08.0 CSaPT o

)006.0()(

SaP

hSaPT

SaPT

166

SaPTRSA

166

)001.0()(

SaP

hSaP

TSa

PT

1000Sa

RSA1000

)650(7.08.0 CSaPT

in2

cm2

in2

cm2

Page 35: Thermal and Layout considerations for  Integrated FET chargers

Typical Thermal Requirements• Ambient temperature: 70°C, TA

• Maximum semiconductor: 125°C, Max TJ

• Maximum board temperature: 120°C• Typical semiconductor loss: 2 W• PowerPAD™ SO-8 thermal resistance: 2.3°C/W• Calculated PWB temperature under semiconductor is

125°C – (2 W x 2.3°C/W) = 120°C Allowed PCB Temp• Allowed Temperature Rise of PCB = 120°C – 70°C = 50°C

IC Body

Thermal Vias

PowerPAD-to-PWBSolder Connection

Top Layer Copper

Internal CopperTied To Vias

Internal CopperNot Tied To Vias

Bottom LayerCopper Tied to Vias

Page 36: Thermal and Layout considerations for  Integrated FET chargers

Convection Cooling Area Calculations• Solving for Surface Area, for 2W dissipation & a 50°C rise

SaPT

166

TPSa

166 7

502166

Sa

4050

21000

Sa

in2

cm2

SaPT

1000

TPSa

1000

• The component heat-sink (PWRPAD) is much smaller than the required cooling area 7 in2, so a heat sink or PCB copper plane has to be used (~2 in2 PCB).

in2

cm2

Page 37: Thermal and Layout considerations for  Integrated FET chargers

Dissipation on Double-Sided Board2 W of point source dissipation on double-sided

board calculates to ~30°C rise under the source

0 61 3 4 50

5

20

25

35

T J - T

empe

ratu

re -

°C

2

10

15

30

2.50 1.0 1.5 2.00

5

20

25

35

T J - T

empe

ratu

re -

°C

0.5

10

15

30

Radius From Heat Source (cm) Radius From Heat Source (inches)• Shown is ~ 33C rise for a 2.5”x2.5” PCB x 2 sides or 12.5in2

Page 38: Thermal and Layout considerations for  Integrated FET chargers

Even a Whisper of Air can Reduce Temperatures

System airflow yields 20% to 60% drop in temperature rise

Metric English

61 3 4 50

5

20

25

Tem

pera

ture

Ris

e - °

C

Air Flow - m/s2

10

15

30

0 1200200 600 800 10000

5

20

25

Tem

pera

ture

Ris

e - °

CAir Flow - LFM

400

10

15

30

0

88 LFM = 1 mph

Page 39: Thermal and Layout considerations for  Integrated FET chargers

PWB Cooling Strategy

• Temperature Rise is a FCN of power dissipate divided by surface area; Low Temp Rise PSMALL/ALARGE = dTSMALL

• Use thick copper, 2oz, to spread heat to larger area.• Use multiple common planes on different layers

connected by vias • Internal Copper Planes are as effective as surface

planes for spreading heat, but has temp rise through FR4 Very little penalty once heat is spread out.

• Use both side to cool• Avoid breaks in planes as they substantially degrade

lateral heat flow Reduce Area

Page 40: Thermal and Layout considerations for  Integrated FET chargers

AgendaWhy this Topic?

PCB Electrical Characteristics• DC Parasitics (Resistance)• AC Parasitics• Grounds and Grounding

PCB Thermal Characteristics• Conduction Concepts• Convection Concepts

Examples• Common “Poor” Thermal Layouts• Good Thermal Layout• Good Electrical Layout

Page 41: Thermal and Layout considerations for  Integrated FET chargers

Top and Bottom Layers – Poor Thermal DesignTop Layer – Quad bqIC is isolated from top copper plane – No Conduction of heat

Bottom Layer – bqIC PWR-PAD vias connected to bottom plane, but area is cut away due to a cutout, parts and Cu pours. Result is limited cooling area.

Page 42: Thermal and Layout considerations for  Integrated FET chargers

Two Inner Layers1st Inner Layer – bqIC PWR-PAD vias connected to plane.

Plane is very small due to Routing, vias. Result is limited cooling.

2nd Inner Layer – bqIC PWR-PAD vias connected to plane. Plane is very small due to Routing on all sides. Result is limited cooling.

Page 43: Thermal and Layout considerations for  Integrated FET chargers

2 Layer bqIC Layout – Good Layout

Top Layer – Quad bqIC is isolated from top copper plane

Bottom Layer – bqIC PWR-PAD vias connected to bottom plane. Best thermal layout – heat from vias can flow in all directions on bottom plane

Page 44: Thermal and Layout considerations for  Integrated FET chargers

EVM Thermal Plot – 2.23W Dissipated1”x2” 2 Layer, 2oz Cu, 0.031” Thick PCB

Boost Converter –Top LayerVbatin=3.3V, 5Vout, Iout=2.12A, 1) IC, 2) Inductor, 3) PCB, 4) Edge of PCB

Boost Converter – Bottom LayerVbatin=3.3V, 5Vout, Iout=2.12A, 1) IC, 2) Whole PCB, 3) Ambient, 4) ~1”sq Center

Page 45: Thermal and Layout considerations for  Integrated FET chargers

EVM Thermal Plot – 0.71W Dissipated 1”x2” 2 Layer, 2oz Cu, 0.031” Thick PCB

Boost Converter –Top LayerVbatin=3.3V, 5Vout, Iout=1A, 1) IC, 2) Inductor, 3) PCB, 4) Edge of PCB

Boost Converter – Bottom LayerVbatin=3.3V, 5Vout, Iout=1A, 1) IC, 2) Whole PCB, 3) Ambient, 4) ~1”sq Center

Page 46: Thermal and Layout considerations for  Integrated FET chargers

Good Electrical Layout

Page 47: Thermal and Layout considerations for  Integrated FET chargers

Electrical and Thermal Layout Summary• Place components to minimize inductive loops• Understand circuit operation

– Keep loop area small for high frequency, di/dt, signals and away from high impedance circuits (Magnetic coupling)

– Keep high dV/dt signal’s area small and away from high impedance circuits (Electric Coupling)

• Use ground planes to lower over all impedance of the ground plane, thus reducing noise.

• Identify hot components and make sure there is a at least one 2oz copper plane to remove heat, >1.5” Radius

• Use multiple vias to conduct heat to different plane layers

Page 48: Thermal and Layout considerations for  Integrated FET chargers

A Good Layout

Makes For A Successful Design

• Power supply layout is as important as any other design consideration

• The power supply engineer must be involved in parts placement and routing

• It is not black magic, but it is an understanding of AC and DC parasitics, grounding, and cooling that makes a successful design