the past, present, and future of igbt technology john shen grainger endowed chair professor...
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The Past, Present, and Future of The Past, Present, and Future of IGBT TechnologyIGBT Technology
John Shen
Grainger Endowed Chair Professor Department of Electrical & Computer Engineering
Illinois Institute of TechnologyChicago, USA
April 7, 2014
OutlineOutline
Applications and market of power semiconductor devices History of IGBT Technology Very high power IGBTs Future trends of IGBT technology Summary
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Application of Power SemiconductorsApplication of Power Semiconductors
Silicon limit
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Wide Bandgap Semiconductors
Frequency [Hz]
100M
10M
1M
100k
10k
1k
100
100 1k 10k 100k 1M
Po
wer
[V
A]
BJT
10M
MOSFET
100M
Thyristors
IGBT(Insulated Gate Bipolar Transistor)
Power IC
Worldwide Market of Power SemiconductorsWorldwide Market of Power Semiconductors
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$14.1B of discrete power devices in 2010 (Yano and IMS)
2008 market data from iSupply
Market Segments of Power SemiconductorsMarket Segments of Power Semiconductors
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OutlineOutline
Applications and market of power semiconductor devices History of IGBT Technology Very high power IGBTs Future trends of IGBT technology Summary
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History of IGBT Technology History of IGBT Technology
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1980
1990
2000
2010
PT-IGBT by GE and RCA
Toshiba solved latch-up issue
Everyone is on PT-IGBT
Siemens’ NPT-IGBT
Trench IGBT
Toshiba’s IEGT (or 4500V IGBT)
IGBT Power Module
Everyone is on thin wafer Field-Stop IGBT
Mitsubishi’s CS-IGBT
IGBT Press-Pack
Theoretical limit of IGBT
SiC IGBT
Wafer scale IGBT
Nano-IGBT
MCT
Design Trade-off of IGBTDesign Trade-off of IGBT
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IGBT turn-off
IGBT turn-on
Improved Conductivity Modulation of IGBTImproved Conductivity Modulation of IGBT
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N-N+ P+
N-
PiN Diode
P+
N- P+
ConventionalIGBT
EnhancedIGBT
Resistive Bottleneck
Carrier Distribution
Improved Conductivity Modulation of IGBTImproved Conductivity Modulation of IGBT
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M. Rahimo et al. 2006
Trench Gate IGBT ConceptTrench Gate IGBT Concept
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Shen & Omura, Proceedings of the IEEE, April 2007
Thin Wafer Field Stop IGBT ConceptThin Wafer Field Stop IGBT Concept
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Shen & Omura, Proceedings of the IEEE, April 2007
Evolution of 1200VEvolution of 1200V Thin Wafer IGBTsThin Wafer IGBTs
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1995300 m
2008100 m
1999185 m
2001128 m
J. Vobecky, ISPSd2008
J. Vobeckt, ISPSD2008
IGBT Performance TrendIGBT Performance Trend
0
10
20
30
40
50
60
70
80
1980 1990 2000 2010
GE
东芝三菱
Infineon(Siemens)ONSEMI (Motorola)
STMicroelectronics
Fairchild (Samsung)
富士电机
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Specific RDS(ON)=Vce(on)/Current Density
R DS(
ON
) (m
Ω-c
m2 )
EOFF ~ 0.1mJ/A , Vcc= 600V
1200V IGBT @125oC
Toshiba
Mitsubishi
Fuji Electric
OutlineOutline
Applications and market of power semiconductor devices History of IGBT Technology Very high power IGBTs Future trends of IGBT technology Summary
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Very High Power IGBTsVery High Power IGBTs
3300/4500/6500V, 500-5000A MV voltage source inverters( replacing GTO or IGCT)
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New steel mill installations( TMEC 2012 )
Applications of High Power IGBTsApplications of High Power IGBTs
HVDC light FACTS MV drives (wind
generators, PV, oil & gas pumps, etc.)
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( Source: ABB )
Topologies of HP-IGBT ConvertersTopologies of HP-IGBT Converters
Cascade H-bridge NPC-MLC IGBT series-
connection
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Expanding the Power Range of IGBTExpanding the Power Range of IGBT
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Silicon limit
Wide Bandgap Semiconductors
Frequency [Hz]
100M
10M
1M
100k
10k
1k
100
100 1k 10k 100k 1M
Po
wer
[V
A]
BJT
10M
MOSFET
100M
GTO
IGBT(Insulated Gate Bipolar Transistor)
Power IC
HP-IGBT
Technical Barrier of HP-IGBTTechnical Barrier of HP-IGBT
IGBT chip size <2cm2, current rating <150A, much more sensitive to defects than GTO
Multi-chip IGBT power modules parallel IGBT chips through bondwires with a current and thermal capability inferior to pressure pack GTO
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Parallel IGBT chips in power modules Wafer scale thyristors
Concept of Wafer Scale IGBTsConcept of Wafer Scale IGBTs
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发射极电极
集电极电极
陶瓷外壳
门电极外引线门电极弹簧针
发射极金属垫片
集电极金属垫片
整晶圆IGBT
Emitter Gate
Emitter Pad
Ceramic Casing
Collector Collector Pad
IGBT Wafer
Gate SpringContact Pin
Laser TrimmerCollector
Emitter 1
Gate
IGBTZone 1
Defective IGBT Zone
Isolation of DefectiveZones with laser trimming
OutlineOutline
Applications and market of power semiconductor devices History of IGBT Technology Very high power IGBTs Future trends of IGBT technology Summary
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Theoretical Limit of IGBT PerformanceTheoretical Limit of IGBT Performance
23( A. Nakagawa 2006 )
Nanoscale IGBT StructureNanoscale IGBT Structure
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(M. Sumitomo, 2012 )
Superjunction Superjunction IGBTIGBT
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( K. Oh et al 2006 )
1200V IGBT simulation
SiC SiC IGBTIGBT
15000V, 24 mΩ-cm2 , 4H-SiC P-IGBT 12500V, 5.3 mΩ-cm2 , 4H-SiC N-IGBT
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( Cree 2012 )
SummarySummary
IGBT is the device of choice for medium power applications
We have not reached the theoretical limit of the fundamental silicon IGBT structure yet even after 30 years of amazing technology advancement!
Still a lot of potential and return of investment in silicon (and BWG) power device research!
Emerging opportunity to push IGBT into megawatt (1-100MW) high power applications
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